CN104022171A - Solar cell and preparing method thereof - Google Patents
Solar cell and preparing method thereof Download PDFInfo
- Publication number
- CN104022171A CN104022171A CN201410224302.7A CN201410224302A CN104022171A CN 104022171 A CN104022171 A CN 104022171A CN 201410224302 A CN201410224302 A CN 201410224302A CN 104022171 A CN104022171 A CN 104022171A
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- type
- layer
- solar cell
- deposition
- surface field
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- 238000000034 method Methods 0.000 title abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 28
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 11
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 14
- 239000012528 membrane Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 238000005816 glass manufacturing process Methods 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 238000005224 laser annealing Methods 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 4
- 238000011031 large-scale manufacturing process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a solar cell and a preparing method thereof. The solar cell comprises a glass substrate (1), an n+/p+ type a-Si:H transmission layer (2), a p-/n- type polycrystalline Si absorbing layer (3) and a p+/n+ type a-Si:H surface field (4); wherein the n+/p+ type a-Si:H transmission layer (2), the p-/n- type polycrystalline Si absorbing layer (3) and the p+/n+ type a-Si:H surface field (4) are successively stacked on the substrate. The p-/n- type polycrystalline Si absorbing layer (3) and the p+/n+ type a-Si:H surface field (4) cover partial surface of the n+/p+ type a-Si:H transmission layer (2). Furthermore a transmission tank (5) is reserved. The solar cell is provided with a cheap glass substrate, and furthermore has advantages of: high energy conversion rate, simple preparing process, low film thickness which furthermore reduces, and high suitability for large-scale production and application.
Description
Technical field
The invention belongs to solar energy and utilize technical field, particularly a kind of solar cell.
Background technology
Energy shortage and environmental pollution are two significant problems that the century mankind face, and become the bottleneck of international community's economic development.Solar energy provides as the regenerative resource of cleanliness without any pollution the preferred embodiments that solves these two problems.At present, how to develop that photoelectric conversion efficiency is high, the life-span is long, stable performance and solar cell with low cost have caused global extensive concern.Therefore, the needs based on era development, solar cell has wide development space.
Solar energy power generating market is just flourish, and in the past between 10 years, solar cell market increases rapidly with 40% ratio every year, and wherein crystal-silicon solar cell has occupied the market share of solar cell nearly 90%.In crystalline silicon solar cell modules, the cost of silicon wafer accounts for 50% of solar cell total cost, even if production technology constantly progresses greatly and develops! The preparation cost that further significantly reduces crystal-silicon solar cell also reaches capacity; Therefore, filming or thin layer change into as reducing Main Means and the development trend of solar cell cost.Thin film solar cell (TFSC) is compared with crystal-silicon solar cell, has that low light level function admirable, raw materials consumption significantly reduce and the advantage such as cost is low.And TFSC also can be prepared in flexible substrate, have good toughness, collapsible, can be curling and can large area production etc. advantage, can be applicable to the surfaces such as clothes, vehicle glass, aircraft and building future.
But traditional thin film solar cell exists the problem that energy conversion efficiency is lower, and complicated process of preparation, film thickness need further compression.
The energy conversion efficiency of the polysilicon thin-film solar battery of preparing in laboratory has at present reached 19%, but to really realize the extensive industrialization of the polysilicon thin-film solar battery of high-efficiency and low-cost, also need the polysilicon membrane prepared must be thin as far as possible and adopt cheap substrate.
Summary of the invention
The problem to be solved in the present invention is to provide a kind of solar cell with inexpensive glass substrate and preparation method thereof, and this solar cell energy transformation ratio is high, and preparation technology is simple, and film thickness further reduces.
A kind of solar cell disclosed by the invention, comprises substrate, and n+/p+ type that superposes successively on described substrate a-Si:H emission layer, p-/n-type polycrystalline Si absorbed layer and p+/n+ type a-Si:H are by surface field; P-/n-type polycrystalline Si absorbed layer and p+/n+ type a-Si:H are covered n+/p+ type a-Si:H emission layer part surface by surface field, leave transmitting groove.
As the further improvement of technique scheme, described substrate is glass substrate.
The preparation method of described solar cell comprises the following steps:
1) glass making herbs into wool; Glass making herbs into wool has increased the effective light path of light in polysilicon membrane, so that polysilicon membrane is enhanced to the absorption of light.
2) deposition of barrier layer and anti-reflection layer; Barrier layer can be used to stop that substrate impurity enters polysilicon membrane active coating, can effectively reduce grain boundary and reduce impurity defect; Reflection when anti-reflection layer can reduce light and incides polysilicon membrane, increases the absorption of film to light.
3) deposition of a-Si layer;
4) preparation of polysilicon membrane, utilizes electron beam evaporation crystallization a-Si layer to obtain polysilicon membrane, or utilizes PEVCD direct deposition of polycrystalline silicon film in the glass substrate that has covered barrier layer;
5) rapid thermal annealing or laser annealing and hydrogen passivation, short annealing or laser annealing can reduce the defect of crystal boundary density and space charge region in a large number, and hydrogen the passivation various crystal boundary blemish of passivation and volume defect very effectively! To obtain higher-quality polysilicon membrane.
6) some optical confinement; In order to reduce the compound and series resistance of the surperficial charge carrier of the back of the body, utilize PEVCD and aluminium inductive technology etc. at upper surface deposition back of the body surface field layer, and in deposition process, carry out in-situ doped.
7) electricity restriction; In order to reduce the resistance of solar cell front and back electrode, utilize photoetching, twine printing, electron beam evaporation and electronics plating etc. to prepare the front and back electrode with ohmic contact.
8) passivation, carries out passivation to solar cell device surface.
Solar cell of the present invention and preparation method thereof has the following advantages:
1, the material using is minimum.Compared with other polysilicon thin-film solar batteries, solar cell of the present invention
Without nesa coating, effectively fall into light technology and can make polysilicon membrane thin as far as possible;
2, preparation technology is very simple;
3, can be further developed into larger active-matrix display screen;
4, battery performance promotes and is increased dramatically, and energy conversion efficiency is high, can reach 12%～13%, is suitable for large-scale commercial applications application.
Accompanying drawing explanation
Fig. 1 is solar battery structure schematic diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, solar cell that the present invention is proposed and preparation method thereof is elaborated.
As shown in Figure 1, solar cell disclosed by the invention, comprises glass substrate 1, and n superposes successively in described glass substrate 1
+/ p
+type a-Si:H emission layer 2, p
-/ n
-type polycrystalline Si absorbed layer 3 and p
+/ n
+type a-Si:H is by surface field 4; p
-/ n
-type polycrystalline Si absorbed layer 3 and p
+/ n
+type a-Si:H is covered n by surface field 4
+/ p
+type a-Si:H emission layer 2 part surfaces, leave transmitting groove 5.
The preparation method of solar cell of the present invention, comprises the following steps:
1) glass making herbs into wool;
2) deposition of barrier layer and anti-reflection layer;
3) deposition of a-Si layer;
4) preparation of polysilicon membrane, utilizes electron beam evaporation crystallization a-Si layer to obtain polysilicon membrane, or utilizes PEVCD(plasma reinforced chemical vapour deposition) direct deposition of polycrystalline silicon film in the glass substrate that has covered barrier layer;
5) rapid thermal annealing or laser annealing and hydrogen passivation;
6) some optical confinement, utilizes PEVCD and aluminium inductive technology etc. at upper surface deposition back of the body surface field layer, and in deposition process, carries out in-situ doped;
7) electricity restriction; Utilize photoetching, twine printing, electron beam evaporation and electronics plating etc. to prepare the front and back electrode with ohmic contact
8) passivation.
Claims (3)
1. a solar cell, is characterized in that: comprise substrate, n superposes successively on described substrate
+/ p
+type a-Si:H emission layer (2), p
-/ n
-type polycrystalline Si absorbed layer (3) and p
+/ n
+type a-Si:H is by surface field (4); p
-/ n
-type polycrystalline Si absorbed layer (3) and p
+/ n
+type a-Si:H is covered n by surface field (4)
+/ p
+type a-Si:H emission layer (2) part surface, leaves transmitting groove (5).
2. solar cell according to claim 1, is characterized in that: described substrate is glass substrate (1).
3. the preparation method of solar cell claimed in claim 2, is characterized in that: comprise the following steps:
1) glass making herbs into wool;
2) deposition of barrier layer and anti-reflection layer;
3) deposition of a-Si layer;
4) preparation of polysilicon membrane, utilizes electron beam evaporation crystallization a-Si layer to obtain polysilicon membrane, or utilizes PEVCD(plasma reinforced chemical vapour deposition) direct deposition of polycrystalline silicon film in the glass substrate that has covered barrier layer;
5) rapid thermal annealing or laser annealing and hydrogen passivation;
6) some optical confinement, utilizes PEVCD and aluminium inductive technology etc. at upper surface deposition back of the body surface field layer, and in deposition process, carries out in-situ doped;
7) electricity restriction; Utilize photoetching, twine printing, electron beam evaporation and electronics plating etc. to prepare the front and back electrode with ohmic contact
8) passivation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410224302.7A CN104022171A (en) | 2014-05-26 | 2014-05-26 | Solar cell and preparing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410224302.7A CN104022171A (en) | 2014-05-26 | 2014-05-26 | Solar cell and preparing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104022171A true CN104022171A (en) | 2014-09-03 |
Family
ID=51438833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410224302.7A Pending CN104022171A (en) | 2014-05-26 | 2014-05-26 | Solar cell and preparing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104022171A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101771106A (en) * | 2010-03-05 | 2010-07-07 | 中国科学院上海硅酸盐研究所 | Method for preparing copper-zinc-cadmium-tin-sulfur-selenium thin film solar cell light absorption layer |
| CN103204540A (en) * | 2013-02-23 | 2013-07-17 | 北京工业大学 | Preparation method of non-hydrazine group solution of Cu2ZnSnS4 solar cell absorbing layer film |
| CN103367542A (en) * | 2013-07-02 | 2013-10-23 | 浙江正泰太阳能科技有限公司 | Crystalline silicon solar cell and preparation method thereof |
| CN204118089U (en) * | 2014-05-26 | 2015-01-21 | 无锡中能晶科新能源科技有限公司 | A kind of solar cell |
-
2014
- 2014-05-26 CN CN201410224302.7A patent/CN104022171A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101771106A (en) * | 2010-03-05 | 2010-07-07 | 中国科学院上海硅酸盐研究所 | Method for preparing copper-zinc-cadmium-tin-sulfur-selenium thin film solar cell light absorption layer |
| CN103204540A (en) * | 2013-02-23 | 2013-07-17 | 北京工业大学 | Preparation method of non-hydrazine group solution of Cu2ZnSnS4 solar cell absorbing layer film |
| CN103367542A (en) * | 2013-07-02 | 2013-10-23 | 浙江正泰太阳能科技有限公司 | Crystalline silicon solar cell and preparation method thereof |
| CN204118089U (en) * | 2014-05-26 | 2015-01-21 | 无锡中能晶科新能源科技有限公司 | A kind of solar cell |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140903 |
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