CN103996654B - Method for manufacturing multi-phase low-dielectric-constant material layer - Google Patents
Method for manufacturing multi-phase low-dielectric-constant material layer Download PDFInfo
- Publication number
- CN103996654B CN103996654B CN201410252749.5A CN201410252749A CN103996654B CN 103996654 B CN103996654 B CN 103996654B CN 201410252749 A CN201410252749 A CN 201410252749A CN 103996654 B CN103996654 B CN 103996654B
- Authority
- CN
- China
- Prior art keywords
- heater
- layer
- pressure
- vacuum
- mixed gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a method for manufacturing a multi-phase low-dielectric-constant material layer. The method for manufacturing the multi-phase low-dielectric-constant material layer comprises the steps that firstly, an aluminum film with a thickness of 80 nm is evaporated on a silicon substrate under the vacuum condition according to the electronic beam evaporation method; then, a nickel film with a thickness of 5 nm is further evaporated on the silicon substrate so that a silicon wafer with the metal films can be formed; a carbon nano tube layer is deposited on the silicon wafer with the metal films according to the plasma enhancement chemical vapor deposition method so that a carbon nano tube layer base material layer can be formed; octamethylcyclotetrasiloxane and cyclohexane are evenly mixed and then are injected into a pressure-resistant stainless steel kettle, the octamethylcyclotetrasiloxane and cyclohexane are brought into a furnace body, and a film layer is deposited on the surface of the substrate through the octamethylcyclotetrasiloxane, the cyclohexane and bubble gas under the plasma condition. By the adoption of the method for manufacturing the multi-phase low-dielectric-constant material layer, the film forming strength is high, the performances are uniform, and the defects that ordinary materials are poor in mechanical strength, local parts are prone to collapse, and the performances of all areas are different are overcome.
Description
Technical field
The present invention relates to a kind of manufacture method of multiphase low dielectric constant material layer, belong to technical field of semiconductors.
Background technology
In the semiconductor industry, it is connected with each other based on plain conductor between different components in large scale integrated circuit,
With the continuous development of semiconductor fabrication process, the processing procedure of integrated circuit constantly reduces, and there is interconnection resistance due in circuit
R () and electric capacity (c), after manufacture of semiconductor reduces to a certain extent, consequent rc ghost effect is also more and more obvious, is
Improve the performance of integrated circuit further, reduce rc and postpone, the material with low-k (low-k) characteristic is constantly carried
Go out and obtained extensive research.
In the semiconductor industry, the method being commonly used for preparing low-dielectric constant film has chemical vapor deposition method
And rotation method (spin-coating) (cvd). wherein, chemical vapor deposition method is few due to having materials, film thickness uniformly, material
The advantages of bed of material is closely knit, is widely used, and the preparation technology of related low-dielectric constant film is also varied,
However, in most of preparation technology, because low-dielectric constant film is mainly single-phase and one-component, thus bringing
Mechanical performance not enough, dielectric constant is too high, governs the cost of this kind of technological process the problems such as complicated process of preparation and big advises
The ability of mould application.Then, multiphase low dielectric constant material film gradually causes the attention of scientists, in multi-phase film material
In material, due to out of phase mechanical strength, dielectric constant and component are different, and the property that it has is different, therefore permissible
Satisfied dielectric constant and mechanical strength are reached by careful regulation and control component and structure.However, because heterogeneous material rises
Step is later it is still necessary to further study.
Content of the invention
It is an object of the present invention to provide a kind of manufacture method of multiphase low dielectric constant material layer, the method not only enables essence
Really easily regulate and control thin-film dielectric constant value, improve thin film flatness, make film chemical composition more uniform, and due to carbon
Nanotube constructs framing structure so that the shaping strength of thin film is higher, and performance is homogeneous, overcomes general mechanical strength
Difference, local easily subsides, the totally different shortcoming of each region performance.
For reaching above-mentioned purpose, the technical solution used in the present invention is: a kind of manufacture of multiphase low dielectric constant material layer
Method, comprises the following steps:
Step one, thin prior to the thick aluminum of one layer of 80nm being deposited with electron beam evaporation plating mode in silicon base under vacuum
Film；
Step 2, the following nickel thin film formation being deposited with one layer of 5nm thickness under conditions of not vacuum breaker again have metal foil
The silicon chip of film；
Step 3, by step 2 have metallic film under the conditions of 600 DEG C and be under ammonia air-flow protection anneal 3
Minute, then heat to 750 DEG C, the ratio being passed through the amount of material is the ammonia-acetylene gaseous mixture of 4:1, and this step reaction time is
15 minutes, in cavity vacuum be 7torr, plasma power be 210w, added voltage swing be 530v, thus by wait from
Daughter strengthens chemical gaseous phase depositing process and deposits one layer of carbon nanotube layer formation carbon nanotube layer base on the silicon chip of metallic film
Material layer；
Step 4, carbon nanotube layer substrate layer is put in the body of heater of a precipitation equipment, described precipitation equipment includes two ends
It is sealed and installed with the described body of heater of end cap, being located at the fluid supply injection equipment of body of heater side, described body of heater front half section winding thoughts
Answer coil, this induction coil is consecutively connected to 13.36mhz radio-frequency power supply and adapter, described fluid supply injection equipment includes resistance to
Pressure rustless steel kettle, the first pressure mixed gas tank and the second pressure mixed gas tank, this first pressure mixed gas tank one end is connected with and is respectively mounted the
First air inlet pipe of one mass flowmenter, the second air inlet pipe, the first pressure mixed gas tank other end is led to pressure rustless steel kettle one end
Cross and the pipeline of ejector pin valve is installed connects, the pressure rustless steel kettle other end is by being provided with ejector pin valve, the first mass flowmenter
Pipeline is connected to first jet；Described second pressure mixed gas tank one end is connected with the 3rd air inlet being respectively mounted the second mass flowmenter
Pipe, the described second pressure mixed gas tank other end is connected to second nozzle, and described first jet, second nozzle are sealedly inserted into described
The end cap of body of heater one end, thus in embedded body of heater, a vacuum pump is located at body of heater opposite side, connects the pipeline of described vacuum pump one end
It is sealedly inserted in the end cap of the body of heater other end, a manual flapper valve, vacuometer are installed on the pipeline between end cap and vacuum pump
On；
After step 5, closing ejector pin valve and first, second mass flowmenter, open manual flapper valve and vacuum pump, extract
Gas in body of heater；
Step 6, when in body of heater vacuum be less than 10-3During pa, start 13.36mhz radio-frequency power supply and adapter；
Step 7, open the second mass flowmenter after, the aerofluxuss nitrogen of survival gas in emptying body of heater or lazy will be used for
Property gas from the 3rd air inlet pipe sequentially pass through the second pressure mixed gas tank, second nozzle send into body of heater in；
Step 8, by octamethylcy-clotetrasiloxane, hexamethylene mix homogeneously and inject in described pressure rustless steel kettle, will rouse
Bubble gas respectively from the first air inlet pipe, the second air inlet pipe inject and sequentially pass through the first pressure mixed gas tank, pressure rustless steel kettle, the
One nozzle is sent in body of heater, thus octamethylcy-clotetrasiloxane, hexamethylene are brought in body of heater, octamethylcy-clotetrasiloxane, ring
Hexane, bubbled gas deposit a thin layer in substrate surface under plasma condition；
After step 9, deposition terminate, close 13.36mhz radio-frequency power supply, adapter, ejector pin valve and first, second quality stream
After gauge, close manual flapper valve, and body of heater is exitted, when pressure recovers to atmospheric pressure in body of heater, open vacuum pump
One side end cap, the thin layer of deposition is transferred in the heating warm area of body of heater, closes end cap, opens manual flapper valve and taken out
Application of vacuum, when in body of heater, vacuum is less than 10-3During pa, the thin layer of deposition is transferred in the heating warm area of body of heater, plus
After 200 ° of c ~ 600 ° c insulations of heat are made annealing treatment, the condition of annealing is vacuum gas-protection-free, thus obtaining described low dielectric
Constant thin layer.
In technique scheme, further improved scheme is as follows:
1., in such scheme, in described step 8, octamethylcy-clotetrasiloxane and the volume ratio of hexamethylene are 1:1.
2., in such scheme, 200 ° of c ~ 600 ° c insulations of heating in described step 9 carried out the annealing time for 10 minutes
~ 120 minutes.
3., in such scheme, an exhaust purifier is installed between end cap and vacuum pump.
4., in such scheme, in described step 8, the flow of bubbled gas is 0.1sccm ~ 1000sccm.
5. in such scheme, in described step 8, bubbled gas are bubbling nitrogen or noble gases, and this noble gas is
One of argon, helium and neon.
6., in such scheme, in described step 9,13.36mhz radio-frequency power supply, the power of adapter are 25w ~ 300w, sink
The long-pending time is 30 seconds ~ 1 hour.
Because technique scheme is used, the present invention compared with prior art has following advantages and an effect:
The manufacture method of multiphase low dielectric constant material layer of the present invention, it achieves convenient accuracy controlling thin-film dielectric constant
It is worth and obtains the thin layer of low dielectric constant values, this thin layer chemical composition evenly, has preferable heat stability, hard
Degree, due to employing plasma enhanced chemical vapor deposition process, considerably improves the flatness of thin film；Secondly, with respect to common
Single homogeneous advanced low-k materials, this method constructs carbon nanotube layer first, and this carbon nanotube layer can be used as this low Jie
The framing structure of permittivity material, makes the shaping strength of thin film high, performance is homogeneous, and it is poor to overcome general mechanical strength, office
Portion easily subsides, the totally different shortcoming of each region performance, and secondly again, the thin layer of its deposition is heated to 300 DEG C ~ 800 DEG C guarantors
After temperature is made annealing treatment, the condition of annealing is vacuum gas-protection-free, due to having completely cut off the impact of air, make sample with respect to
Annealing has the raising of significantly repeatability in an atmosphere, also in control, simultaneously because not introducing protection air-flow, it is to avoid sample
It is turned over, it also avoid sample surfaces simultaneously and there is turbulent flow, therefore sample surfaces atmosphere is more uniform；Sample surfaces simultaneously
Temperature is more nearly design temperature, thus has more preferable uniformity and reliability.
Brief description
Accompanying drawing 1 is the deposition apparatus design schematic diagram of the manufacture method of multiphase low dielectric constant material layer of the present invention；
The uniform carbon nanotube layer sem photo that accompanying drawing 2 adopts for the present invention；
The sem photo of the uniform CNT layer cross section that accompanying drawing 3 adopts for the present invention；
The sem photo of the low dielectric constant material film layer cross section that accompanying drawing 4 is prepared for the present invention.
In the figures above: 1, body of heater；2nd, end cap；3rd, fluid supply injection equipment；4th, induction coil；5th, 13.36mhz radio frequency electrical
Source；6th, adapter；7th, pressure rustless steel kettle；8th, the first pressure mixed gas tank；9th, the second pressure mixed gas tank；101st, the first mass flow
Meter；102nd, the second mass flowmenter；111st, the first air inlet pipe；112nd, the second air inlet pipe；12nd, ejector pin valve；13rd, first jet；
141st, the 3rd air inlet pipe；15th, second nozzle；16th, exhaust purifier；17th, vacuum pump；18th, vacuometer；19th, manual flapper valve.
Specific embodiment
With reference to embodiment, the invention will be further described:
Embodiment: a kind of manufacture method of multiphase low dielectric constant material layer, comprise the following steps:
Step one, thin prior to the thick aluminum of one layer of 80nm being deposited with electron beam evaporation plating mode in silicon base under vacuum
Film；
Step 2, the following nickel thin film formation being deposited with one layer of 5nm thickness under conditions of not vacuum breaker again have metal foil
The silicon chip of film；
Step 3, by step 2 have metallic film under the conditions of 600 DEG C and be under ammonia air-flow protection anneal 3
Minute, then heat to 750 DEG C, the ratio being passed through the amount of material is the ammonia-acetylene gaseous mixture of 4:1, and this step reaction time is
15 minutes, in cavity vacuum be 7torr, plasma power be 210w, added voltage swing be 530v, thus by wait from
Daughter strengthens chemical gaseous phase depositing process and deposits one layer of carbon nanotube layer formation carbon nanotube layer base on the silicon chip of metallic film
Material layer；
Step 4, carbon nanotube layer substrate layer is put in the body of heater 1 of a precipitation equipment, described precipitation equipment includes two ends
It is sealed and installed with the described body of heater 1 of end cap 2, being located at the fluid supply injection equipment 3 of body of heater 1 side, described body of heater 1 front half section winding
There is induction coil 4, this induction coil 4 is consecutively connected to 13.36mhz radio-frequency power supply 5 and adapter 6, described fluid supply spraying machine
Structure 3 includes the pressure mixed gas tank 8 of pressure rustless steel kettle 7, first and the second pressure mixed gas tank 9, and this first pressure mixed gas tank 8 one end is even
It is connected to the first air inlet pipe 111, the second air inlet pipe 112 being respectively mounted the first mass flowmenter 101, the first pressure mixed gas tank 8 is another
End is connected by being provided with the pipeline of ejector pin valve 12 with pressure rustless steel kettle 7 one end, and pressure rustless steel kettle 7 other end passes through to install
Ejector pin valve 12, the pipeline of the first mass flowmenter 101 is had to be connected to first jet 13；Described second pressure mixed gas tank 9 one end is even
It is connected to the 3rd air inlet pipe 141 being respectively mounted the second mass flowmenter 102, described second pressure mixed gas tank 9 other end is connected to
Two nozzles 15, described first jet 13, second nozzle 15 are sealedly inserted into the end cap of described body of heater one end thus embedding in body of heater,
One vacuum pump 17 is located at body of heater 1 opposite side, and the pipeline connecting described vacuum pump 17 one end is sealedly inserted into the end of body of heater 1 other end
In lid 2, a manual flapper valve 19, vacuometer 18 are installed on the pipeline between end cap 2 and vacuum pump 17；
After step 5, closing ejector pin valve 12 and first, second mass flowmenter 101,102, open manual flapper valve 19 He
Vacuum pump 17, extracts gas in body of heater 1；
Step 6, when in body of heater 1 vacuum be less than 10-3During pa, start 13.36mhz radio-frequency power supply 5 and adapter 6；
Step 7, open the second mass flowmenter 102 after, by be used for survival gas in emptying body of heater aerofluxuss nitrogen or
Noble gases from the 3rd air inlet pipe 141 sequentially pass through the second pressure mixed gas tank 9, second nozzle 15 send into body of heater 1 in；
Step 8, by octamethylcy-clotetrasiloxane, hexamethylene mix homogeneously and inject in described pressure rustless steel kettle 7, will
Bubbled gas respectively from the first air inlet pipe 111, the second air inlet pipe 112 inject and sequentially pass through the first pressure mixed gas tank 8, pressure not
Rust steel kettle 7, first jet 13 are sent in body of heater 1, thus octamethylcy-clotetrasiloxane, hexamethylene are brought in body of heater 1, prestox
Cyclotetrasiloxane, hexamethylene, bubbled gas deposit a thin layer in substrate surface under plasma condition；
After step 9, deposition terminate, close 13.36mhz radio-frequency power supply 5, adapter 6, ejector pin valve 12 and first, second matter
After amount effusion meter 101,102, close manual flapper valve 19, and body of heater 1 is exitted, treat that in body of heater 1, pressure recovers to air
During pressure, open vacuum pump 17 1 side end cap, the thin layer of deposition is transferred in the heating warm area of body of heater 1, close end cap, beat
Drive manual flapper valve and carry out evacuation process, when in body of heater 1, vacuum is less than 10-3During pa, the thin layer of deposition is transferred to
In the heating warm area of body of heater 1, after 200 ° of c ~ 600 ° c insulations of heating are made annealing treatment, the condition of annealing is that vacuum no gas is protected
Shield, thus obtain described low dielectric constant films layer.
In above-mentioned steps eight, octamethylcy-clotetrasiloxane and the volume ratio of hexamethylene are 1:1.
In above-mentioned steps nine, 200 ° of c ~ 600 ° c insulations of heating carry out the annealing time for 10 minutes ~ 120 minutes.
One exhaust purifier 16 is installed between end cap 2 and vacuum pump 17.
In above-mentioned steps eight, the flow of bubbled gas is 0.1sccm ~ 1000sccm.
In above-mentioned steps eight, bubbled gas are bubbling nitrogen or noble gases, and this noble gas is argon, helium and neon
One of gas.
13.36mhz radio-frequency power supply 5 in above-mentioned steps nine, the power of adapter 6 are 25w ~ 300w, sedimentation time is 30 seconds ~
1 hour.
Above-described embodiment only technology design to illustrate the invention and feature, its object is to allow person skilled in the art
Scholar will appreciate that present disclosure and implements according to this, can not be limited the scope of the invention with this.All according to the present invention
Equivalence changes or modification that spirit is made, all should be included within the scope of the present invention.
Claims (7)
1. a kind of manufacture method of multiphase low dielectric constant material layer it is characterised in that: comprise the following steps:
Step one, under vacuum prior to the thick aluminium film of one layer of 80nm being deposited with electron beam evaporation plating mode in silicon base；
Step 2, the following nickel thin film formation being deposited with one layer of 5nm thickness under conditions of not vacuum breaker again have metallic film
Silicon chip；
Step 3, by step 2 have metallic film silicon chip and be under ammonia air-flow protection and move back under the conditions of 600 DEG C
Fire 3 minutes, then heats to 750 DEG C, and the ratio being passed through the amount of material is the ammonia-acetylene gaseous mixture of 4:1, this step reaction time
For 15 minutes, in cavity, vacuum was 7torr, and plasma power is 210w, and added voltage swing is 530v, thus passing through
Gas ions strengthen chemical gaseous phase depositing process and deposit one layer of carbon nanotube layer formation carbon nanotube layer on the silicon chip of metallic film
Substrate layer；
Step 4, carbon nanotube layer substrate layer is put in the body of heater (1) of a precipitation equipment, it is close that described precipitation equipment includes two ends
Envelope is provided with the described body of heater (1) of end cap (2), is located at the fluid supply injection equipment (3) of body of heater (1) side, before described body of heater (1)
Half section is wound with induction coil (4), and this induction coil (4) is consecutively connected to 13.36mhz radio-frequency power supply (5) and adapter (6),
Described fluid supply injection equipment (3) includes pressure rustless steel kettle (7), the first pressure mixed gas tank (8) and the second pressure mixed gas tank
(9), this first pressure mixed gas tank (8) one end be connected be respectively mounted the first mass flowmenter (101) the first air inlet pipe (111),
Second air inlet pipe (112), first pressure mixed gas tank (8) other end and pressure rustless steel kettle (7) one end are by being provided with ejector pin valve
(12) pipeline connects, and pressure rustless steel kettle (7) other end is by being provided with ejector pin valve (12), the first mass flowmenter (101)
Pipeline be connected to first jet (13)；Described second pressure mixed gas tank (9) one end is connected with and is respectively mounted the second mass flowmenter
(102) the 3rd air inlet pipe (141), described second pressure mixed gas tank (9) other end is connected to second nozzle (15), and described first
Nozzle (13), second nozzle (15) are sealedly inserted into the end cap of described body of heater one end thus embedding in body of heater, a vacuum pump (17)
Positioned at body of heater (1) opposite side, the pipeline connecting described vacuum pump (17) one end is sealedly inserted into the end cap of body of heater (1) other end
(2), in, a manual flapper valve (19), vacuometer (18) are installed on the pipeline between end cap (2) and vacuum pump (17)；
After step 5, closing ejector pin valve (12) and first, second mass flowmenter (101,102), open manual flapper valve (19)
With vacuum pump (17), extract the interior gas of body of heater (1)；
Step 6, when in body of heater (1) vacuum be less than 10-3During pa, start 13.36mhz radio-frequency power supply (5) and adapter (6)；
Step 7, open the second mass flowmenter (102) after, the aerofluxuss nitrogen of survival gas in emptying body of heater or lazy will be used for
Property gas sequentially passes through the second pressure mixed gas tank (9) from the 3rd air inlet pipe (141), second nozzle (15) is sent in body of heater (1)；
Step 8, by octamethylcy-clotetrasiloxane, hexamethylene mix homogeneously and inject in described pressure rustless steel kettle (7), will rouse
Bubble gas injects and sequentially passes through the first pressure mixed gas tank (8), resistance to from the first air inlet pipe (111), the second air inlet pipe (112) respectively
Pressure rustless steel kettle (7), first jet (13) are sent in body of heater (1), thus octamethylcy-clotetrasiloxane, hexamethylene are brought into body of heater
(1), in, octamethylcy-clotetrasiloxane, hexamethylene, bubbled gas deposit a thin layer in substrate surface under plasma condition；
After step 9, deposition terminate, close 13.36mhz radio-frequency power supply (5), adapter (6), ejector pin valve (12) and first, second
After mass flowmenter (101,102), close manual flapper valve (19), and body of heater (1) is exitted, treat the interior pressure of body of heater (1)
When recovering to atmospheric pressure, open vacuum pump (17) side end cap, the thin layer of deposition is transferred to the heating warm area of body of heater (1)
Interior, close end cap, open manual flapper valve and carry out evacuation process, when in body of heater (1), vacuum is less than 10-3During pa, will be heavy
Long-pending thin layer is transferred in the heating warm area of body of heater (1), after 200 ° of c ~ 600 ° c insulations of heating are made annealing treatment, annealing
Condition is vacuum gas-protection-free, thus obtaining described low dielectric constant films layer.
2. manufacture method according to claim 1 it is characterised in that: octamethylcy-clotetrasiloxane and ring in described step 8
The volume ratio of hexane is 1:1.
3. manufacture method according to claim 1 it is characterised in that: 200 ° of c ~ 600 ° c of heating insulation in described step 9
Carry out the annealing time for 10 minutes ~ 120 minutes.
4. the manufacture method according to any one of claim 1 ~ 3 it is characterised in that: an exhaust purifier (16) is installed on
Between end cap (2) and vacuum pump (17).
5. manufacture method according to claim 1 it is characterised in that: in described step 8, the flow of bubbled gas is
0.1sccm~1000sccm.
6. the manufacture method according to any one of claim 1 ~ 3 it is characterised in that: in described step 8, bubbled gas are
Bubbling nitrogen or noble gases, this noble gas is one of argon, helium and neon.
7. the manufacture method according to any one of claim 1 ~ 3 it is characterised in that: in described step 9,13.36mhz penetrates
Frequency power (5), the power of adapter (6) are 25w ~ 300w, and sedimentation time is 30 seconds ~ 1 hour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410252749.5A CN103996654B (en) | 2014-06-09 | 2014-06-09 | Method for manufacturing multi-phase low-dielectric-constant material layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410252749.5A CN103996654B (en) | 2014-06-09 | 2014-06-09 | Method for manufacturing multi-phase low-dielectric-constant material layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103996654A CN103996654A (en) | 2014-08-20 |
| CN103996654B true CN103996654B (en) | 2017-01-25 |
Family
ID=51310769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410252749.5A Active CN103996654B (en) | 2014-06-09 | 2014-06-09 | Method for manufacturing multi-phase low-dielectric-constant material layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103996654B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1464726A2 (en) * | 2003-04-01 | 2004-10-06 | Air Products And Chemicals, Inc. | CVD method for forming a porous low dielectric constant SiOCH film |
| CN1659685A (en) * | 2002-06-19 | 2005-08-24 | 国际商业机器公司 | An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device |
| CN1787881A (en) * | 2003-03-18 | 2006-06-14 | 国际商业机器公司 | Ultra low k (ulk) SiCOH film and method |
-
2014
- 2014-06-09 CN CN201410252749.5A patent/CN103996654B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1659685A (en) * | 2002-06-19 | 2005-08-24 | 国际商业机器公司 | An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device |
| CN1787881A (en) * | 2003-03-18 | 2006-06-14 | 国际商业机器公司 | Ultra low k (ulk) SiCOH film and method |
| EP1464726A2 (en) * | 2003-04-01 | 2004-10-06 | Air Products And Chemicals, Inc. | CVD method for forming a porous low dielectric constant SiOCH film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103996654A (en) | 2014-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI493622B (en) | Method for improving process control and film conformality of pecvd films | |
| JP6058876B2 (en) | Method for depositing SiO2 film | |
| CN103540908A (en) | Method of depositing silicone dioxide films | |
| JP3574734B2 (en) | Method for manufacturing semiconductor device | |
| TW454266B (en) | Method for producing silicon a series of nitride film | |
| CN103924208A (en) | Method for preparing multilayer graphene thin film | |
| CN103887233B (en) | Preparation technology for low dielectric constant thin film layer for integrated circuit | |
| CN103996654B (en) | Method for manufacturing multi-phase low-dielectric-constant material layer | |
| CN103484833B (en) | A kind of low-stress silicon compound super thick film material, Preparation method and use | |
| Boogaard et al. | Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD | |
| CN103887139B (en) | Plasma enhancing chemical vapor deposition device for preparing low-dielectric-constant materials | |
| CN103904026B (en) | The microelectronic chip manufacturing process of low dielectric constant films layer | |
| WO2015184573A1 (en) | Ultra-low dielectric constant insulating film and method for manufacturing same | |
| CN103531463A (en) | Preparation method of low surface pore and low dielectric constant thin-film material | |
| CN114203527A (en) | Method and device for thermal oxidation of silicon carbide wafer | |
| CN104164660B (en) | A kind of low-k dielectric constant porous SiOCNH thin film and preparation method thereof | |
| CN112820795A (en) | Amorphous silicon material resistivity adjusting method | |
| CN103956331B (en) | A kind of thin film for porous connected medium surface-sealing and preparation method thereof | |
| CN104392957A (en) | Preparation method for low dielectric constant thin-film layer | |
| CN107140621A (en) | A kind of preparation method of ultra-thin layer graphene micro-pipe | |
| CN114551221A (en) | Method for preparing silicon nitride film on semiconductor substrate | |
| JPH11162960A (en) | Plasma film forming method | |
| CN103101906A (en) | Graphene, and preparation method and application thereof | |
| JP6944699B2 (en) | Method for manufacturing hexagonal boron nitride film | |
| CN102312225B (en) | Method for depositing silicon oxide on silicon nitride surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201111 Address after: No. 230, North Central Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: Li Ming Address before: 215123 No. 199 benevolence Road, Suzhou Industrial Park, Jiangsu, China Patentee before: Suzhou University |
|
| TR01 | Transfer of patent right | ||
| CP02 | Change in the address of a patent holder |
Address after: 210 000 No. 52 East Shogunate Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: Li Ming Address before: No. 230, North Central Road, Gulou District, Nanjing City, Jiangsu Province Patentee before: Li Ming |
|
| CP02 | Change in the address of a patent holder |