CN103995006B - Test based on infrared imaging and judge the method that crosslinked cable semiconductive fracture insulate - Google Patents
Test based on infrared imaging and judge the method that crosslinked cable semiconductive fracture insulate Download PDFInfo
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- CN103995006B CN103995006B CN201310544614.1A CN201310544614A CN103995006B CN 103995006 B CN103995006 B CN 103995006B CN 201310544614 A CN201310544614 A CN 201310544614A CN 103995006 B CN103995006 B CN 103995006B
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- 238000012360 testing method Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000003331 infrared imaging Methods 0.000 title claims abstract description 14
- 238000009413 insulation Methods 0.000 claims abstract description 26
- 230000007547 defect Effects 0.000 claims abstract description 18
- 238000001931 thermography Methods 0.000 claims abstract description 10
- 238000004458 analytical method Methods 0.000 claims abstract description 8
- 206010037660 Pyrexia Diseases 0.000 claims description 12
- 238000005259 measurement Methods 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 6
- 230000008030 elimination Effects 0.000 claims description 5
- 238000003379 elimination reaction Methods 0.000 claims description 5
- 230000007613 environmental effect Effects 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 5
- 238000007689 inspection Methods 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 7
- 238000012423 maintenance Methods 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000010998 test method Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005662 electromechanics Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 231100001267 hazard identification Toxicity 0.000 description 1
- 239000002510 pyrogen Substances 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
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Abstract
The invention discloses a kind of method tested based on infrared imaging and judge crosslinked cable semiconductive fracture insulation defect, the method includes: uses infrared thermography, tests the infrared image of 35kV cable termination semiconductive incision position under operation；The infrared image of cable termination semiconductive incision position is compared with cable longitudinally, laterally infrared image, completes cable termination semiconductive incision position temperature and the analysis of thermograde；Get rid of surface filth, the impact of ambient humidity factor, and the character and the order of severity to insulation hidden danger is made and clearly being judged.By the present invention in that with infrared thermography, shoot the infrared image of cable termination semiconductive incision position under operation, find the hot stall defect of 35kV crosslinked cable terminal semiconductive incision position, pass through graphical analysis, improve insulation defect judgment accuracy, decrease interruption maintenance number of times and power off time, produce higher economic benefit and social benefit.
Description
Technical field
The invention belongs to the crosslinked cable technical field of electromechanics, particularly relate to a kind of based on infrared imaging test and
Judge the method that crosslinked cable semiconductive fracture insulate.
Background technology
35kV cable uses in urban distribution network in a large number, and the cable termination semiconductive incision position occurred in operation is exhausted
The fault that edge punctures is a lot, by for many years to power system 35kV crosslinked cable accident statistical analysis, finding
Cable termination semiconductive fracture Fault of Insulating Breakdown occupies bigger ratio, and the economic loss caused is very big, because of
This under operation, the potential faults of early discovery cable termination semiconductive fracture, and the character to hidden danger
Making, with the order of severity, the normal important subject that clearly judges between right and wrong, owing to working voltage is the highest, personnel cannot
Contact, traditional test method cannot find the insulation hidden danger of cable semi-conductive incision position, uses infra-red heat to become
As instrument carries out running detection, can preferably find temperature and the temperature difference existed at cable insulation hidden danger, help
Find insulation defect, but test needs the impact of thermal source interference, the cable surface getting rid of in test environment
The filthy impact with humid environment factor.
Summary of the invention
The purpose of the embodiment of the present invention is that providing a kind of tests based on infrared imaging and judge that crosslinked cable is partly led
The method of electricity fracture insulation, it is intended to solve traditional test method and cannot find the exhausted of cable semi-conductive incision position
The problem of edge hidden danger.
The embodiment of the present invention is achieved in that one based on infrared imaging test and judges that crosslinked cable is partly led
The method of electricity fracture insulation, should test based on infrared imaging and judge the side that crosslinked cable semiconductive fracture insulate
Method comprises the following steps:
Step one, uses infrared thermography, and test 35kV cable termination semiconductive breaks under operation
Infrared image at Kou；
Step 2, by the infrared image of cable termination semiconductive incision position and cable longitudinally, laterally infrared image
Compare, complete cable termination semiconductive incision position temperature and the analysis of thermograde；
Step 3, gets rid of surface filth, the impact of ambient humidity factor, and to the character of insulation hidden danger and tight
Weight degree is made and clearly being judged.
Further, in step one and step 2, cable termination is found partly to lead in the infrared image photographed
The temperature anomaly point of electricity fracture, if along cable longitudinal comparison surface temperature difference more than 10 DEG C, simultaneously contrast cable its
, there is the obvious temperature difference in the temperature of the semiconductive fracture of its phase, if the infrared figure of semiconductive incision position insulation defect
The heating feature of picture is high temperature hotspot or ring-type temperature drift phenomenon occur in local, is tentatively judged as that cable is eventually
There is insulation defect in end semiconductive fracture, it is proposed that carries out repetition measurement or the inspection that has a power failure.
Further, should test and judge the method elimination that crosslinked cable semiconductive fracture insulate based on infrared imaging
The method of the impact of Environmental Heat Source interference, cable surface filth and humid environment factor in test is:
When one, carrying out cable fracture infrared survey, around tested cable, should there is no the interference of sunlight and light source,
The strong heat radiation avoiding interference thermal source affects test result；
Two, being dried, humidity carries out repetition measurement less than under 40% weather；
Three, surface filth also can cause semiconductive incision position to have fever phenomenon, after cable fracture is cleaned,
Select to carry out repetition measurement when of dry weather.
What the present invention provided tests based on infrared imaging and judges the method that crosslinked cable semiconductive fracture insulate,
By using infrared thermography, shoot the infrared image of cable termination semiconductive incision position under operation,
Find the hot stall defect of 35kV crosslinked cable terminal semiconductive incision position, by the analysis to infrared image,
After taking to eliminate the measure of various interference effect, it is simple to character and the order of severity to cable insulation defect are made
Analyze accurately and judge, improve the insulation defect to 35kV cable termination semiconductive incision position and judge standard
Really property, carries out overhaul of the equipments targetedly, decreases interruption maintenance number of times and power off time, produce higher
Economic benefit and social benefit, preferably resolve traditional test method cannot find cable semi-conductive break
The problem of the insulation hidden danger at Kou.
Accompanying drawing explanation
Fig. 1 is testing based on infrared imaging and judging crosslinked cable semiconductive fracture of embodiment of the present invention offer
The flow chart of the method for insulation；
Fig. 2 is the insulation fault schematic diagram of the cable semi-conductive incision position that the embodiment of the present invention provides；
Fig. 3 is that the cable that the embodiment of the present invention provides records temperature schematic diagram by infrared thermography；
Fig. 4 be the embodiment of the present invention provide cloudy time surface filth cause electric cable heating schematic diagram；
The schematic diagram that when Fig. 5 is the fine day of embodiment of the present invention offer, surface filth fever phenomenon disappears.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with embodiment,
The present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to
Explain the present invention, be not intended to limit the present invention.
Below in conjunction with the accompanying drawings and the application principle of the present invention is further described by specific embodiment.
As it is shown in figure 1, the embodiment of the present invention based on infrared imaging test and judge that crosslinked cable semiconductive is disconnected
The method of mouth insulation comprises the following steps:
S101: use infrared thermography, under operation test 35kV cable termination semiconductive fracture
The infrared image at place；
S102: by the infrared image of cable termination semiconductive incision position and cable longitudinally, laterally infrared image phase
Contrast, completes cable termination semiconductive incision position temperature and the analysis of thermograde, and the temperature difference, should more than 10 DEG C
Carrying out repetition measurement at fine day, the temperature difference, should interruption maintenance in time still above 10 DEG C；
S103: get rid of the impact of the factor such as surface filth, ambient humidity, and to the character of insulation hidden danger and tight
Weight degree is made and clearly being judged；
Fig. 2 is the insulation fault schematic diagram of the cable semi-conductive incision position that the embodiment of the present invention provides, and Fig. 3 is
The cable that the embodiment of the present invention provides records temperature schematic diagram, cable B phase semiconductive by infrared thermography
Incision position, maximum temperature 49.1 DEG C, the alternate lateral comparison temperature difference 6.9 DEG C, Fig. 4 is that the embodiment of the present invention provides
Cloudy time surface filth cause electric cable heating schematic diagram, Fig. 5 be the embodiment of the present invention provide fine day time table
The schematic diagram that filth fever phenomenon in face disappears.
In step S101 and step S102, the infrared image photographed finds cable termination semiconductive
The temperature anomaly point of fracture, if along this cable longitudinal comparison surface temperature difference more than more than 10 DEG C, contrast electricity simultaneously
, there is the obvious temperature difference in the temperature of the semiconductive fracture of other phase of cable, if semiconductive incision position insulation defect is red
The heating feature of outer image is high temperature hotspot or ring-type temperature drift phenomenon occur in local, can tentatively judge
Insulation defect is there is, it is proposed that carry out repetition measurement or the inspection that has a power failure for cable termination semiconductive fracture；
The present invention is to eliminate Environmental Heat Source interference, cable surface filth and the shadow of humid environment factor in test
Ring, employing following methods elimination interference effect:
When one, carrying out cable fracture infrared survey, around tested cable, should there is no the interference of sunlight and light source,
The strong heat radiation avoiding interference thermal source affects test result；
Two, test result is had a significant impact by wet environment, if finding in infrared test that cable termination is partly led
Electricity incision position has fever phenomenon, should check that ambient humidity is the biggest, if air humidity is more than 70%, it is proposed that
Be dried under (humidity be less than 40%) weather and carry out repetition measurement, if fever phenomenon disappears, be then moist ring
The surface heat that border and filthy condition cause；
Three, surface filth also can cause semiconductive incision position to have fever phenomenon, but the feature of heating is to compare
Uniform ring-type heat picture, it is proposed that after cleaning cable fracture, selects to carry out the when of dry weather
Repetition measurement, if fever phenomenon disappears, is then surface filth and moist environmental conditions causes；
The using effect of the present invention:
Use infrared thermography, shoot the infrared image of cable termination semiconductive incision position under operation,
The hot stall defect of 35kV crosslinked cable terminal semiconductive incision position can be found in time, by infrared figure
The analysis of picture, and after taking to eliminate the measure of various interference effect, can to the character of cable insulation defect and
The order of severity is made and is analyzed accurately and judge, improve 35kV cable termination semiconductive incision position is exhausted
Edge defect dipoles accuracy, carries out overhaul of the equipments targetedly, reduces interruption maintenance number of times and power off time,
Therefore higher economic benefit and social benefit can be produced, the voltage pyrogenicity type event to the cable in DL/T664
The criterion of barrier proposes recommendation on improvement, and the volume of repairing for code provides technical support and reference frame；
In conjunction with the detailed description of the invention of the present invention, the present invention is described further:
One, work ticket should be filled in before infrared test, specify task, safety measure and hazard Identification, survey
Examination personnel are operated the division of labor, and the parameter completing infrared thermography arranges (atmospheric temperature, humidity, environment
Reference body temperature, radiation coefficient, distance, Range of measuring temp)；
After two, infrared test finds the hot stall defect of cable termination semiconductive incision position, should carry out accurately
Measure.In order to eliminate thermal source interference effect in test environment, cable surface filth and the shadow of humid environment factor
Ring, it is proposed that employing following methods and step elimination interference effect:
When 1, carrying out cable fracture infrared survey, should there is no the interference of sunlight and light source around tested cable, keep away
Exempt to disturb the strong heat radiation of thermal source to affect test result.
2, test result is had a significant impact by wet environment, if finding cable termination semiconductive in infrared test
Incision position has fever phenomenon, should check that ambient humidity is the biggest, if air humidity is more than 70%, it is proposed that
Be dried under (humidity be less than 40%) weather and carry out repetition measurement, if fever phenomenon disappears, be then wet environment
The surface heat caused with filthy condition.
3, surface filth also can cause semiconductive incision position to have fever phenomenon, but the feature of heating is that comparison is equal
Even ring-type heat picture, it is proposed that after cleaning cable fracture, selects to carry out again the when of dry weather
Survey, if fever phenomenon disappears, be then surface filth and moist environmental conditions causes.
Three, discriminatory analysis method: find temperature drift point in the infrared image of cable termination semiconductive fracture,
Along cable longitudinal comparison surface temperature difference more than more than 10 DEG C, the temperature of the contrast each fracture site of threephase cable also has
Substantially exceeding, heating feature is to there is local hot spot, after the step completing above-mentioned elimination interference effect,
Cable semi-conductive incision position yet suffers from local hot spot, it may be determined that cable exists insulation defect.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all at this
Any amendment, equivalent and the improvement etc. made within bright spirit and principle, should be included in the present invention
Protection domain within.
Claims (1)
1. test based on infrared imaging and judge the method that crosslinked cable semiconductive fracture insulate, its feature
It is, should test based on infrared imaging and judge that the method that crosslinked cable semiconductive fracture insulate includes following step
Rapid:
Step one, uses infrared thermography, and test 35kV cable termination semiconductive breaks under operation
Infrared image at Kou；
Step 2, the reddest by the infrared image of cable termination semiconductive incision position and threephase cable
Outer image compares, and completes cable termination semiconductive incision position temperature and the analysis of thermograde；
Step 3, measures respectively at cloudy day and fine day, in order to pinpoint the problems, and get rid of surface filth, environment
The impact of humidity factor, and the insulation character of hidden danger and the order of severity are made and clearly being judged；
In step one and step 2, the infrared image photographed finds cable termination semiconductive fracture
Temperature anomaly point, if along cable longitudinal comparison surface temperature difference more than 10 DEG C, contrast cable other is biphase simultaneously
, there is the obvious temperature difference in the temperature of semiconductive fracture, if semiconductive incision position insulation defect infrared image send out
Hot feature is high temperature hotspot or ring-type temperature drift phenomenon occur in local, is tentatively judged as that cable termination is partly led
There is insulation defect in electricity fracture, it is proposed that carries out repetition measurement or the inspection that has a power failure；
In should be based on infrared imaging test and judging that the method elimination that crosslinked cable semiconductive fracture insulate is tested
The method of the impact of Environmental Heat Source interference, cable surface filth and humid environment factor is:
When one, carrying out cable fracture infrared survey, around tested cable, should there is no the interference of sunlight and light source,
The strong heat radiation avoiding interference thermal source affects test result；
Two, being dried, humidity carries out repetition measurement less than under 40% weather；
Three, surface filth also can cause semiconductive incision position to have fever phenomenon, after cable fracture is cleaned,
Select to carry out repetition measurement when of dry weather.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310544614.1A CN103995006B (en) | 2013-11-06 | 2013-11-06 | Test based on infrared imaging and judge the method that crosslinked cable semiconductive fracture insulate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310544614.1A CN103995006B (en) | 2013-11-06 | 2013-11-06 | Test based on infrared imaging and judge the method that crosslinked cable semiconductive fracture insulate |
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| CN103995006A CN103995006A (en) | 2014-08-20 |
| CN103995006B true CN103995006B (en) | 2016-11-16 |
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| CN113687156B (en) * | 2021-08-07 | 2022-09-20 | 郑州海威光电科技有限公司 | Method for assisting in judging hidden danger of power equipment by utilizing infrared chart |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101464488A (en) * | 2009-01-16 | 2009-06-24 | 上海慧东电气设备有限公司 | On-line monitoring system for high voltage cable |
| CN202676290U (en) * | 2012-05-23 | 2013-01-16 | 中国电力科学研究院 | Electric power cable terminal infrared thermal imaging intelligent measuring system |
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2013
- 2013-11-06 CN CN201310544614.1A patent/CN103995006B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101464488A (en) * | 2009-01-16 | 2009-06-24 | 上海慧东电气设备有限公司 | On-line monitoring system for high voltage cable |
| CN202676290U (en) * | 2012-05-23 | 2013-01-16 | 中国电力科学研究院 | Electric power cable terminal infrared thermal imaging intelligent measuring system |
Non-Patent Citations (2)
| Title |
|---|
| 红外成像检测配电电缆终端缺陷;李雪 等;《电气制造》;20120731;64-65、67 * |
| 红外热成像技术在电力系统故障诊断中的应用;普恩平 等;《电力技术》;20090731(第77期);50-56 * |
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