CN103993359A - Welding method of sapphire wafer - Google Patents
Welding method of sapphire wafer Download PDFInfo
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- CN103993359A CN103993359A CN201410194227.4A CN201410194227A CN103993359A CN 103993359 A CN103993359 A CN 103993359A CN 201410194227 A CN201410194227 A CN 201410194227A CN 103993359 A CN103993359 A CN 103993359A
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- sapphire wafer
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- well heater
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Abstract
A welding method of a sapphire wafer relates to the technical field of sapphire. According to the invention, a butt joint face of a sapphire wafer (3) is heated by the use of a heater with temperature gradient in a gas protection environment; after the butt joint face of the sapphire wafer is melted, heating temperature of the heater is reduced to make the butt joint face of the sapphire wafer to be recrystallized from two ends towards the center and make the welded sapphire wafer to form a complete monocrystal. Shock strength of the joint of the sapphire wafer is consistent with shock strength of the sapphire wafer. Application fields of sapphire wafers are greatly broadened.
Description
[technical field]
The present invention relates to sapphire technical field, relate in particular to a kind of welding process of sapphire wafer, be specifically related to a kind of method of utilizing thermograde welding sapphire wafer.
[background technology]
Known, sapphire has excellent optical property, mechanical property and chemical stability, its intensity is high, hardness is large, resistance to erosion and anticorrosive, can under the mal-condition that approaches 2000 DEG C of high temperature, work, and it also has good heat conductivity and electric insulating quality, the most important thing is that sapphire also has good light transmission, be widely used in infrared window, the technical fields such as high strength optics window and medicine equipment, along with the continuous increase of optics volume, demand to large-size sapphire wafer goods is also increasing, and sapphire wafer in when growth owing to being subject to the restriction of existing growing technology and specification of equipment, the specification of sapphire wafer all cannot meet the demand of optical window, in order to solve this technical problem, just multiple sapphire wafers need to be combined, to reach the requirement of size aspect.
The mode of existing sapphire wafer combination is for utilizing stickup slurry to carry out bonding to sapphire wafer, cemented side seam by the bonding sapphire wafer of the method can not bear high temperature and high pressure, and the pressure-bearing degree of cemented side seam is fallen and is several times lower than even tens times than the pressure-bearing degree of sapphire wafer; Or by ionic fluid etch method, sapphire wafer is connected, the sapphire wafer tensile strength that the method connects is very little, only has 10Mpa left and right; Or by method for brazing, sapphire wafer is connected, the connecting portion of the sapphire wafer that the method connects is opaque, thereby the web member obtaining can not be used as optical window etc.
In sum, above-mentioned to the method for attachment of sapphire wafer because the intensity of binding surface is all well below the intensity of sapphire wafer, all there will be wire at binding surface simultaneously, the sapphire wafer of welding really cannot be fused into one and form a complete single crystal, and then cannot meet preferably the requirement etc. of optical window.
Reference:
Know net space master thesis: the diffusion of thesis topic sapphire connects research, the Wang Tian of Authors of Science Articles Harbin Institute of Technology one-tenth, classification number: 0799, network address:
http:// cdmd.cnki.com.cn/Article/CDMD-10213-2010064337.htm;
Chinese patent: publication number is CN103103621A, open day be that on 05 15th, 2013, patent name are a kind of sapphire joining method, sapphire window and stickup slurry.
[summary of the invention]
For overcoming the deficiency existing in background technology, the invention provides a kind of welding process of sapphire wafer, the present invention has thermograde well heater by employing heats the binding surface of sapphire wafer, after the binding surface of sapphire wafer melts, reduce the Heating temperature of well heater, and then the binding surface that makes sapphire wafer crystallization make the sapphire wafer of welding form a complete single crystal again from two ends to centre, greatly widen the Application Areas of sapphire wafer etc.
For realizing goal of the invention as above, the present invention adopts technical scheme as described below:
A welding process for sapphire wafer, described welding process comprises the steps:
The first step, get all the sapphire wafer ready;
Second step, connect step, the sapphire wafer for the treatment of welding is fixed in airtight body of heater, and makes the binding surface for the treatment of welding sapphire wafer in thering is the well heater of thermograde;
The 3rd step, connect step, the well heater in the utilization of gas shield environment with thermograde heats the welding end of sapphire wafer, when heating, the temperature of sapphire wafer joint is the highest, the temperature at joint two ends is step-down formation temperature gradient gradually, after the joint of sapphire wafer melts, slowly reduce the Heating temperature of well heater, make sapphire wafer make binding surface and sapphire wafer form a complete single crystal from both sides to joint while recrystallize, or when heating, the temperature of sapphire wafer joint and sapphire wafer termination, one end is high, the temperature of the other end sapphire wafer is by outwards step-down formation temperature gradient gradually of interface, after the joint of sapphire wafer melts, slowly reduce the Heating temperature of well heater, make sapphire wafer make binding surface and sapphire wafer form a complete single crystal from the low one end of temperature to joint recrystallize,
The 4th step, connect step, continue to reduce the Heating temperature of well heater, and progressively temperature is reduced to normal temperature state, then take out the sapphire wafer after welding.
The welding process of described sapphire wafer, on body of heater described in described second step, be respectively equipped with air-bleed system and inflation inlet, in body of heater, be provided with clamping device, described clamping device clamping sapphire wafer, on sapphire wafer joint, be provided with well heater or below sapphire wafer joint, be provided with well heater or on sapphire wafer joint and below be respectively equipped with well heater, described well heater connects high frequency electric source.
The welding process of described sapphire wafer, the sapphire wafer that described the 4th step is obtained after welding polishes and polishing.
Adopt technical scheme as above, the present invention has superiority as described below:
The welding process of a kind of sapphire wafer of the present invention, the present invention has thermograde well heater binding surface to sapphire wafer under gas shield environment by employing heats, after the binding surface of sapphire wafer melts, reduce the Heating temperature of well heater, and then the binding surface that makes sapphire wafer crystallization make the sapphire wafer of welding form a complete single crystal again from two ends to centre, the resistance to impact shock of sapphire wafer interface and the resistance to impact shock of sapphire wafer are consistent, greatly widen the Application Areas of sapphire wafer etc.
[brief description of the drawings]
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of well heater in the present invention;
Fig. 3 is the plan structure schematic diagram of well heater in the present invention;
Fig. 4 is another structural representation of well heater in the present invention;
In the drawings: 1, body of heater; 2, additional hot plate A; 3, sapphire wafer; 4, clamping device; 5, air-bleed system; 6, additional hot plate B; 7, high frequency electric source; 8, middle hot-plate; 9, inflation inlet.
[embodiment]
Can explain in more detail the present invention by the following examples, the present invention is not limited to the following examples;
The welding process of a kind of sapphire wafer described in 1～4 by reference to the accompanying drawings, described welding process comprises the steps:
The first step, get all the sapphire wafer 3 ready;
Second step, connect step, the sapphire wafer 3 for the treatment of welding is fixed in airtight body of heater 1, on described body of heater 1, be respectively equipped with air-bleed system 5 for vacuumizing and for being filled with the inflation inlet 9 of protective gas, described protective gas is helium, neon, argon gas, Krypton, xenon, nitrogen, any one in freonll-11 or radon gas, further, in body of heater 1, be provided with the clamping device 4 for clamping sapphire wafer 3, and make the binding surface for the treatment of welding sapphire wafer 3 in thering is the well heater of thermograde, the set-up mode wherein with the well heater of thermograde be on sapphire wafer 3 joints, be provided with well heater below sapphire wafer 3 joints, be provided with well heater or on sapphire wafer 3 joints and below be respectively equipped with well heater, described well heater connects high frequency electric source 7,
The 3rd step, connect step, the well heater in the utilization of gas shield environment with thermograde heats the welding end of sapphire wafer 3, when heating, the temperature of sapphire wafer 3 joints is the highest, the temperature at joint two ends is step-down formation temperature gradient gradually, after the joint of sapphire wafer 3 melts, slowly reduce the Heating temperature of well heater, make sapphire wafer 3 make binding surface and sapphire wafer 3 form a complete single crystal from both sides to joint while recrystallize, wherein said well heater comprises additional hot plate A2, additional hot plate B6 and middle hot-plate 8, hot-plate 8 in the middle of being provided with between described additional hot plate A2 and additional hot plate B6, hot-plate 8 and additional hot plate B6 in the middle of described additional hot plate A2 connects successively, wherein the Heating temperature of additional hot plate A2 and additional hot plate B6 is lower than the Heating temperature of middle hot-plate 8, therefore the binding surface of sapphire wafer 3 first melts, then along with reducing gradually the temperature of well heater, the liquation of sapphire wafer 3 binding surfaces taking sapphire wafer 3 as seed crystal by two ends successively to middle part again crystallization finally form a complete single crystal, or when heating, the temperature of sapphire wafer 3 joints and one end sapphire wafer 3 terminations is high, the temperature of the other end sapphire wafer 3 is by outwards step-down formation temperature gradient gradually of interface, after the joint of sapphire wafer 3 melts, slowly reduce the Heating temperature of well heater, make sapphire wafer 3 make binding surface and sapphire wafer 3 form a complete single crystal from the low one end of temperature to joint recrystallize, wherein said well heater comprises additional hot plate A2 and middle hot-plate 8, hot-plate 8 in the middle of described additional hot plate A2 connects, described additional hot plate A2 is arranged on the end of one of them sapphire wafer 3 binding surface, middle hot-plate 8 is arranged on the end of binding surface He another sapphire wafer 3 of sapphire wafer 3, wherein the Heating temperature of additional hot plate A2 is lower than the Heating temperature of middle hot-plate 8, therefore first melt the end of the binding surface of sapphire wafer 3 and another sapphire wafer 3, then along with reducing gradually the temperature of well heater, the liquation of sapphire wafer 3 binding surfaces makes binding surface and sapphire wafer 3 form a complete single crystal taking sapphire wafer 3 as seed crystal from the low one end of temperature to joint recrystallize,
The 4th step, connect step, continue to reduce the Heating temperature of well heater, and progressively temperature is reduced to normal temperature state, then take out the sapphire wafer 3 after welding, then the sapphire wafer 3 obtaining after welding is polished and polishing.
Part not in the detailed description of the invention is prior art.
The embodiment selecting in this article for open object of the present invention, currently thinks suitablely, still, will be appreciated that, the present invention is intended to comprise that all belong to all changes and the improvement of the embodiment in this design and invention scope.
Claims (3)
1. a welding process for sapphire wafer, is characterized in that: described welding process comprises the steps:
The first step, get all the sapphire wafer (3) ready;
Second step, connect step, the sapphire wafer (3) for the treatment of welding is fixed in airtight body of heater (1), and makes the binding surface for the treatment of welding sapphire wafer (3) in thering is the well heater of thermograde;
The 3rd step, connect step, the well heater in the utilization of gas shield environment with thermograde heats the welding end of sapphire wafer (3), when heating, the temperature of sapphire wafer (3) joint is the highest, the temperature at joint two ends is step-down formation temperature gradient gradually, after the joint of sapphire wafer (3) melts, slowly reduce the Heating temperature of well heater, make sapphire wafer (3) make binding surface and sapphire wafer (3) form a complete single crystal from both sides to joint while recrystallize, or when heating, the temperature of sapphire wafer (3) joint and one end sapphire wafer (3) termination is high, the temperature of the other end sapphire wafer (3) is by outwards step-down formation temperature gradient gradually of interface, after the joint of sapphire wafer (3) melts, slowly reduce the Heating temperature of well heater, make sapphire wafer (3) make binding surface and sapphire wafer (3) form a complete single crystal from the low one end of temperature to joint recrystallize,
The 4th step, connect step, continue to reduce the Heating temperature of well heater, and progressively temperature is reduced to normal temperature state, then take out the sapphire wafer (3) after welding.
2. the welding process of sapphire wafer according to claim 1, it is characterized in that: on the body of heater described in described second step (1), be respectively equipped with air-bleed system (5) and inflation inlet (9), in body of heater (1), be provided with clamping device (4), described clamping device (4) clamping sapphire wafer (3), sapphire wafer (3) above joint, be provided with well heater below sapphire wafer (3) joint, be provided with well heater or sapphire wafer (3) above joint and below be respectively equipped with well heater, described well heater connects high frequency electric source (7).
3. the welding process of sapphire wafer according to claim 1, is characterized in that: the sapphire wafer (3) that described the 4th step is obtained after welding polishes and polishing.
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| CN201410194227.4A CN103993359B (en) | 2014-04-30 | 2014-04-30 | A kind of welding process of sapphire wafer |
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| CN201410194227.4A CN103993359B (en) | 2014-04-30 | 2014-04-30 | A kind of welding process of sapphire wafer |
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| CN103993359B CN103993359B (en) | 2017-01-04 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112410887A (en) * | 2020-11-17 | 2021-02-26 | 通辽精工蓝宝石有限公司 | Welding method of sapphire rods |
| CN112958942A (en) * | 2021-04-06 | 2021-06-15 | 常州工程职业技术学院 | Application of cesium tungsten bronze as solder for welding sapphire |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59233000A (en) * | 1983-06-17 | 1984-12-27 | Nec Corp | Welding method of sapphire single crystal |
| US6012303A (en) * | 1997-06-11 | 2000-01-11 | Saphikon, Inc. | Eutectic bonding of single crystal components |
| US20060225638A1 (en) * | 2005-01-05 | 2006-10-12 | Schott Ag | Process for the low-temperature joining of bodies, and products produced in accordance with the process |
| CN103056553A (en) * | 2013-01-18 | 2013-04-24 | 哈尔滨工业大学 | Solder, preparation method thereof and method for connecting sapphire and niobium or niobium alloys by using solder |
| CN103103621A (en) * | 2013-02-25 | 2013-05-15 | 无锡鼎晶光电科技有限公司 | Sapphire splicing method, sapphire window and paste size |
| CN203096235U (en) * | 2013-02-25 | 2013-07-31 | 无锡鼎晶光电科技有限公司 | Sapphire window |
| CN103643302A (en) * | 2013-11-26 | 2014-03-19 | 浙江上城科技有限公司 | Thermal sapphire compounding method |
-
2014
- 2014-04-30 CN CN201410194227.4A patent/CN103993359B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59233000A (en) * | 1983-06-17 | 1984-12-27 | Nec Corp | Welding method of sapphire single crystal |
| US6012303A (en) * | 1997-06-11 | 2000-01-11 | Saphikon, Inc. | Eutectic bonding of single crystal components |
| US20060225638A1 (en) * | 2005-01-05 | 2006-10-12 | Schott Ag | Process for the low-temperature joining of bodies, and products produced in accordance with the process |
| CN103056553A (en) * | 2013-01-18 | 2013-04-24 | 哈尔滨工业大学 | Solder, preparation method thereof and method for connecting sapphire and niobium or niobium alloys by using solder |
| CN103103621A (en) * | 2013-02-25 | 2013-05-15 | 无锡鼎晶光电科技有限公司 | Sapphire splicing method, sapphire window and paste size |
| CN203096235U (en) * | 2013-02-25 | 2013-07-31 | 无锡鼎晶光电科技有限公司 | Sapphire window |
| CN103643302A (en) * | 2013-11-26 | 2014-03-19 | 浙江上城科技有限公司 | Thermal sapphire compounding method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112410887A (en) * | 2020-11-17 | 2021-02-26 | 通辽精工蓝宝石有限公司 | Welding method of sapphire rods |
| CN112958942A (en) * | 2021-04-06 | 2021-06-15 | 常州工程职业技术学院 | Application of cesium tungsten bronze as solder for welding sapphire |
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| CN103993359B (en) | 2017-01-04 |
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Denomination of invention: Welding method of sapphire wafer Effective date of registration: 20180110 Granted publication date: 20170104 Pledgee: Xin Rong investment Company limited by guarantee Pledgor: Luoyang Jinnuo Mechanical Engineering Co., Ltd. Registration number: 2017410000032 |
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