CN103986450B - Switch, tuner of antenna and radio frequency device - Google Patents
Switch, tuner of antenna and radio frequency device Download PDFInfo
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- CN103986450B CN103986450B CN201410197743.2A CN201410197743A CN103986450B CN 103986450 B CN103986450 B CN 103986450B CN 201410197743 A CN201410197743 A CN 201410197743A CN 103986450 B CN103986450 B CN 103986450B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J5/00—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner
- H03J5/02—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with variable tuning element having a number of predetermined settings and adjustable to a desired one of these settings
- H03J5/14—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with variable tuning element having a number of predetermined settings and adjustable to a desired one of these settings operated by auxiliary power
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J2200/00—Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
- H03J2200/06—Tuning of antenna
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0054—Gating switches, e.g. pass gates
Abstract
The embodiment of the invention discloses a switch, a tuner of an antenna and a radio frequency device, and therefore transmission efficiency of the switch comprising a plurality of series transistors is adjusted comprehensively, and a leakage current is restrained. The switch comprises the 2N transistors which are sequentially connected in series. According to the 2N transistors which are sequentially connected in series, the control ends of any two transistors with the odd sequence numbers closest to each other are coupled through a first resistor, and the control ends of any two transistors with the even sequence numbers closest to each other are coupled through a second resistor; the control end of the nth transistor is coupled to a first control signal in switch control signals, and the control end of the (n+1)th transistor is coupled to the first control signal, wherein n is an integer which is greater than or equal to one and less than or equal to 2N-1, N is an integer greater than or equal to two, and the first control signal is used for controlling switching-on or switching-off of the switch.
Description
Technical field
The present invention relates to electronic technology field, more particularly to the tuner and radio-frequency unit of a kind of switch, antenna.
Background technology
With the development of wireless communication technology, mobile communication equipment generally needs to support multimode, the requirement of multiband that this will
Ask on a mobile communications device, an antenna needs not only to support the switching from emission mode to reception pattern, and need
Meet the requirement of multimode and multiband.
In radio-frequency unit, there is transmitting chain and receives link, the transmitting chain can claim altogether with receives link
For radio frequency processing module.When radio frequency processing module decides to do at least one that signal transmission and signal are received, need to launch
At least one in link and receives link is used to selectively connect on antenna, and this selective connection is generally with a SPDT
(Single-Pole Double-Throw, single-pole double throw) switchs to realize, as shown in Figure 1.Radio frequency processing module bag in Fig. 1
Transmitting chain and receives link are included, when SPDT switch connects the antenna to transmitting chain, transmitting chain is used for baseband signal
It is modulated and obtains radiofrequency signal, antenna is used to send the radiofrequency signal after the modulation.When SPDT switch is connected the antenna to
During receives link, receives link is used to be demodulated the signal that antenna is received.In order to optimize the efficiency of antenna, tuner is made
Radio-frequency unit is introduced into for a kind of device of adjustment Antenna Impedance Matching.Tuner can be connected between radio-frequency module and antenna
A kind of impedance matching network, it antenna can be done impedance matching process so that antenna emitting performance is optimized.Such as Fig. 1 institutes
Show, tuner can be coupling between antenna and SPDT switch.Alternatively, the tuner of antenna also can be coupling in SPDT switch and penetrate
Between frequency module.Tuner generally includes the devices such as switch, electric capacity, resistance or inductance.Controlled in tuner by control signal
The on and off of multiple switch to change tuner between electric capacity or electric capacity and other devices annexation, such as inductance and
The annexation of resistance come to be input into antenna before radiofrequency signal be tuned, it is this switch and electric capacity composition circuit also cry
Do digital tunable capacitor (Digitally Tunable Capacitor, DTC).Therefore, the performance of the switch in tuner can be
Largely affect the work of tuner.
Switch in tuner can be as shown in Figure 2 A.In order in the case where high-power control signal is born not by
Puncture, the switch in tuner needs to be designed using multiple transistor stacks, and the stacking is namely mutually gone here and there by multiple transistors
Connection.Doing as a example by the series connection of multiple MOS (Mental-Oxide-Semiconductor, metal-oxide semiconductor (MOS)) pipe in Fig. 2A
Illustrate, used as a switch, the switch has input for input signal to the metal-oxide-semiconductor after multiple series connection, for exporting letter
Number output end and control end.Switch control terminal receives control signal, and under control of the control signal opens the switch
Or close.When switch is opened, the signal of input input is transferred to output end；When switch is closed, input signal will not be passed
Transport to output end.Because there is larger parasitic capacitance, therefore high-power, the high-frequency of grid in the grid and source electrode of each metal-oxide-semiconductor
Control signal may be directly coupled to source electrode, i.e., the output on metal-oxide-semiconductor produces impact, therefore needs between grid and control signal
Increase resistance to be isolated, otherwise, grid leakage current, i.e., the electric current for falling from gate leakage can be quite big, larger so as to cause
The loss of signal, and then cause switch performance to deteriorate.In fig. 2, the metal-oxide-semiconductor being related to is NMOS (N-Mental-Oxide-
Semiconductor, N-type metal-oxide semiconductor (MOS)) pipe, represented with label M.The grid leakage current of each NMOS tube Ig tables
Show.The schematic diagram of one NMOS tube can as shown in Figure 2 B, including source S, grid G and drain D.When grid G is high level,
The NMOS tube conducting, source S and drain D connect, and the input of drain D is transmitted to source S；When grid G is low level, should
NMOS tube is ended, and the passage of drain D to source S is blocked.
Certainly, when the switch is made by integrated circuit technology, it is also possible to using other different types of transistors,
Such as NMOS can also be replaced using PMOS (P-Mental-Oxide-Semiconductor, P-type mos) pipe
Pipe, PMOS schematic diagram can be represented such as Fig. 2 C, different from NMOS, in PMOS, when grid G is high level, source S
The passage for being input to drain D is blocked；When grid G is low level, the input of source S is transmitted to drain D.
When isolation resistance is increased to reduce leakage current for transistor, a kind of prior art is proposed in multiple series connection MOS
The grid of each metal-oxide-semiconductor connects an isolation resistance to reduce grid leakage current Ig in pipe, and the substrate of each transistor can also
Increase similar to the isolation resistance of grid to reduce substrate leakage current.As shown in figure 3, multiple NMOS tube M series connection, each NMOS tube
Grid and substrate grid control signal and substrate control signal can be coupled respectively to by isolation resistance R, but these every
It is not to be directly connected with grid control signal and substrate control signal from resistance R, but further by a resistance r and grid
Pole control signal and substrate control signal connect to realize reducing leakage current.However, due to the grid or substrate of each transistor
Only connect two series resistances R and r, isolation may not meet requirement under some scenes.
In order to further improve the resistance isolation of multiple series connection metal-oxide-semiconductors, the metal-oxide-semiconductor that another kind of prior art is proposed
With the annexation of resistance as shown in figure 4, in a series of metal-oxide-semiconductors connected, each transistor is represented with M, each metal-oxide-semiconductor
The grid of grid and the metal-oxide-semiconductor being adjacent is connected by resistance R, and will be close to the resistance of the metal-oxide-semiconductor of output end
It is connected with a resistance r, so as to pass through resistance r control signal is received, so as to realizes improving the resistance from control signal to transistor
Isolation, because the grid of the transistor near input is increased to the series resistance quantity of switch control terminal, isolation is corresponding
Improve.But for the transistor near input, with the series resistance increasing number for being coupled to control end, from control end to
The signal transmission delay of the grid of the transistor will increase, so as to reduce the efficiency of transmission of whole switch.Therefore how to reduce
The undue loss of efficiency of transmission is avoided during the leakage current of transistor becomes a problem.
The content of the invention
A kind of switch, the tuner of antenna and radio-frequency unit are embodiments provided, is included with comprehensive adjustment multiple
The efficiency of transmission and suppression leakage current of the switch of serial transistor.
In a first aspect, embodiments providing a kind of switch, it is characterised in that include：The 2N crystalline substance being sequentially connected in series
Body pipe, the 2N transistor being sequentially connected in series includes the first transistor to 2N transistors, and N is the integer more than or equal to 2；Institute
State the transistor and the transistor of even number set of the odd number group that the 2N transistor being sequentially connected in series is divided into；Wherein, the odd number group
Transistor include the first transistor, third transistor ..., 2N-1 transistors；The transistor of the even number set includes the
Two-transistor, the 4th transistor ..., 2N transistors；In the transistor of the odd number group, any two have closest to odd number
The control end of the transistor of sequence number is coupled by first resistor；In the transistor of the even number set, any two have closest
The control end of the transistor of even number sequence number is coupled by second resistance；In the 2N transistor being sequentially connected in series, n-th is brilliant
The control end of body pipe is coupled to the first control signal in switch controlling signal, and the control end of the (n+1)th transistor is coupled
To first control signal, wherein, n is an integer more than or equal to 1 and less than or equal to 2N-1, the first control letter
Number for controlling the on and off of the switch.
According in a first aspect, in the first possible implementation of first aspect, the control end of n-th transistor
First control signal is coupled to by 3rd resistor, and the control end of (n+1)th transistor is coupled by the 4th resistance
To first control signal.
According to the first possible implementation of first aspect, in second possible implementation of first aspect
In, the first end of the 3rd resistor connects the control end of n-th transistor, the second end connection the 5th of the 3rd resistor
The first end of resistance；The first end of the 4th resistance connects the control end of (n+1)th transistor, states the second of the 4th resistance
The first end of the 5th resistance of end connection；Second end of the 5th resistance is coupled to first control signal.
According to second possible implementation of first aspect, in the third possible implementation of first aspect
In, n is further an odd number；The control end of n-th transistor is connected to the 3rd resistor, and institute by the 11st resistance
The control end for stating the n-th transistor and at least one first resistor that is connected with n-th transistor are by the 11st resistance phase
Coupling；The control end of (n+1)th transistor is connected to the 4th resistance by the 12nd resistance, and (n+1)th transistor
Control end and at least one second resistance being connected with (n+1)th transistor are coupled by the 12nd resistance.
According to second possible implementation of first aspect, in the 4th kind of possible implementation of first aspect
In, n is further an even number；The control end of n-th transistor is connected to the 3rd resistor, and institute by the 11st resistance
The control end for stating the n-th transistor and at least one second resistance that is connected with n-th transistor are by the 11st resistance phase
Coupling；The control end of (n+1)th transistor is connected to the 4th resistance by the 12nd resistance, and (n+1)th transistor
Control end and at least one first resistor being connected with (n+1)th transistor are coupled by the 12nd resistance.
According to first aspect or any one possible implementation before of first aspect, the 5th kind in first aspect can
In the implementation of energy, in the transistor of the odd number group, any two have the substrate closest to the transistor of odd indexed to lead to
Cross the 6th resistance to be coupled；In the transistor of the even number set, any two have the substrate of the transistor closest to even number sequence number
It is coupled by the 7th resistance；Wherein, the substrate of the n-th transistor is coupled to the second control letter in the switch controlling signal
Number, and the substrate of the (n+1)th transistor is coupled to second control signal, second control signal is used for the 2N
The substrate level of the transistor being sequentially connected in series is controlled.
According to the 5th kind of possible implementation of first aspect, in the 6th kind of possible implementation of first aspect
In, the substrate of n-th transistor is coupled to second control signal by the 8th resistance, and (n+1)th transistor
Substrate is coupled to second control signal by the 9th resistance.
According to the 6th kind of possible implementation of first aspect, in the 7th kind of possible implementation of first aspect
In, the first end of the 8th resistance connects the substrate of n-th transistor, and the second end connection the tenth of the 8th resistance is electric
The first end of resistance；The first end of the 9th resistance connects the substrate of (n+1)th transistor, and the second end for stating the 9th resistance connects
Connect the first end of the tenth resistance；Second end of the tenth resistance is coupled to second control signal.
According to the 7th kind of possible implementation of first aspect, in the 8th kind of possible implementation of first aspect
In, n is further an odd number；The substrate of n-th transistor is connected to the 8th resistance, and described n-th by the 13rd resistance
The substrate of transistor and at least one the 6th resistance being connected with n-th transistor are coupled by the 13rd resistance；Institute
State the substrate of the (n+1)th transistor and the 9th resistance be connected to by the 14th resistance, and the substrate of (n+1)th transistor and with this
At least one the 7th connected resistance of (n+1)th transistor are coupled by the 14th resistance.
According to the 7th kind of possible implementation of first aspect, in the 9th kind of possible implementation of first aspect
In, n is further an even number；The substrate of n-th transistor is connected to the 8th resistance, and described n-th by the 13rd resistance
The substrate of transistor and at least one the 7th resistance being connected with n-th transistor are coupled by the 13rd resistance；Institute
State the substrate of the (n+1)th transistor and the 9th resistance be connected to by the 14th resistance, and the substrate of (n+1)th transistor and with this
At least one the 6th connected resistance of (n+1)th transistor are coupled by the 14th resistance.
According to first aspect or any one possible implementation before of first aspect, the tenth kind in first aspect can
In the implementation of energy, the value of n is specially N.
According to first aspect or any one possible implementation before of first aspect, the tenth in first aspect is a kind of
In possible implementation, the 2N transistor being sequentially connected in series is：Bipolar transistor, metal oxide semiconductor transistor
Or high-velocity electrons mobility transistor.
Second aspect, the embodiment of the present invention additionally provides a kind of tuner of antenna, including the electric capacity of at least two parallel connections
Tuner, each capacitance tuning device includes：Input, for receiving radiofrequency signal；Capacitance tuning device, for penetrating to described
Frequency signal is tuned the signal after being tuned；Output end, for exporting the tuning after signal；The capacitance tuning device
Including：For electric capacity that the radiofrequency signal is tuned and according to first aspect or first aspect any one is possible
Switch described in implementation, the switch and the capacitances in series, the switch can be in the switch controlling signal
Optionally the radiofrequency signal and the electric capacity is coupled to carry out the radiofrequency signal by the electric capacity under control
Tuning.
According to second aspect, in the first possible embodiment of second aspect, the tuner also includes：At least
One inductance tuner, each inductance tuner includes one or more inductance, in the electric capacity of at least two parallel connections
On the basis of tuner, after the radiofrequency signal before the capacitance tuning device tuning of at least two parallel connections or the tuning
Signal further tuned.
According to the first possible implementation of second aspect or second aspect, second in second aspect is possible
In implementation, the value of the electric capacity can be adjusted or for constant by capacitance control signal.
The third aspect, the present invention additionally provides a kind of radio-frequency unit in implementing, including antenna and according to second aspect or the
The tuner described in any one possible implementation of two aspects；The antenna is used to from the tuner receive
Signal after the tuning, and send the signal after the tuning.
According to the third aspect, in a kind of possible implementation of the third aspect, the radio-frequency unit also includes：Penetrate
Frequency processing module, for being modulated to baseband signal the radiofrequency signal is obtained, and the radiofrequency signal is supplied to described
Tuner.
Embodiments provide a kind of switch, including respective switch antenna tuner and associated radio frequency device,
The transistor and the crystal of one group of serial number even number of one group of serial number odd number being divided into due to multiple transistors being sequentially connected in series
Pipe, and respectively resistance isolation is carried out to the control end of each group transistor, can suitably reduce the grid leakage current of transistor,
Also the quantity of the gate series resistance of transistor can be suitably reduced, the compromise for suppressing leakage current and efficiency of transmission is realized, more entirely
Face ground lifts regulating effect.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention or the rough schematic view of prior art, for those of ordinary skill in the art, are not paying wound
On the premise of the property made is laborious, can be with according to these other accompanying drawings of accompanying drawings acquisition.
A kind of rough schematic view of radio-frequency unit that Fig. 1 is provided for prior art；
The rough schematic view of the switch in a kind of tuner of antenna that Fig. 2A is provided for prior art；
A kind of rough schematic view of NMOS tube that Fig. 2 B are provided for prior art；
A kind of rough schematic view of PMOS that Fig. 2 C are provided for prior art；
The rough schematic view of the switch of a kind of many metal-oxide-semiconductors series connection that Fig. 3 is provided for prior art；
The rough schematic view of the switch of another kind of many metal-oxide-semiconductors series connection that Fig. 4 is provided for prior art；
Fig. 5 is a kind of rough schematic view of switch provided in an embodiment of the present invention；
Fig. 6 is a kind of rough schematic view of switch provided in an embodiment of the present invention
Fig. 7 is the rough schematic view of another kind of switch provided in an embodiment of the present invention；
Fig. 8 is the rough schematic view of another kind of switch provided in an embodiment of the present invention；
Fig. 9 is the rough schematic view of another kind of switch provided in an embodiment of the present invention；
Figure 10 is the rough schematic view of another kind of switch provided in an embodiment of the present invention；
Figure 11 is a kind of radio frequency of antenna tuner including the switch with improvement performance provided in an embodiment of the present invention
The rough schematic view of device.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than the embodiment of whole.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 5 is a kind of brief configuration schematic diagram of switch provided in an embodiment of the present invention, and the switch includes：2N successively
The transistor of series connection.For ease of description, this 2N transistor being sequentially connected in series is allocated successively serial number the first transistor
M1 ..., 2N-1 transistor M2N-1 and 2N transistor M2N, N is an integer more than or equal to 2.It is appreciated that this reality
The technical scheme that example is used for the purpose of the clearer description embodiment of the present invention to the transistor Allotment Serial Number that these are connected is applied, is made
Obtain those skilled in the art and clearly understood that different crystal pipe annexation after concatenation, but these sequence numbers itself are not appointed
What art-recognized meanings, it only expresses the relative position of different crystal pipe.Such as, the sequence number distributed according to the present embodiment, crystal
Pipe M1 and transistor M2 are adjacent transistors, and between transistor M1 and transistor M3 between be separated with transistor M2.The present embodiment
Be related to sequence number and may not necessarily be marked on actual transistor product in Practical Project, or actual transistor product label or
Title may be different from the transistor sequence number that the present embodiment is provided, it should be appreciated that, as long as the offer electricity of a solution
The structure that line structure is described with the present embodiment is substantially identical, and it ought to fall into protection scope of the present invention.According to above-mentioned sequence number point
With mode, transistor M1, M3 ... ..., M2N-1 are the transistors of serial number odd number, it is also possible to the referred to as transistor of odd number group.It is brilliant
Body pipe M2, M4 ... ..., M2N are the transistors of serial number even number, it is also possible to the referred to as transistor of even number set.Serial number odd number
Transistor M1 ... ..., the control end of each two adjacent transistor (two transistors having closest to odd indexed) in M2N-1
It is coupled by first resistor R1.The transistor M2 ... ... of serial number even number, (two have each two adjacent transistor in M2N
Closest to the transistor of even number sequence number) control end be coupled by second resistance R2.The control end of each transistor is namely
The grid of the transistor.So, 2N transistor of series connection is divided into 2 groups.For example, in the crystal of first group of serial number odd number
The resistance connection that the grid of Guan Zhong, transistor M1 and transistor M3 is numbered R1 by one；By that analogy in the group most
Latter two transistor, the grid of transistor M2N-3 and M2N-1 connects also by the resistance for being numbered R1.At the 2N
In the transistor being sequentially connected in series, the grid that can select any two adjacent transistor receives control signal, such as the n-th transistor
The control end of Mn and the (n+1)th transistor Mn+1 can be coupled to the first control signal in switch controlling signal, wherein, n can
Think more than or equal to 1 and an integer less than or equal to 2N-1, that is to say, that n is a specific value, and for example it can take
The half of the 2N of serial transistor quantity, i.e. N.First control signal is used to control the on and off of the switch
System.First control signal is transferred to the control end of the transistor of serial number odd number after one or more first resistors R1, and
The control end of the transistor of serial number even number is transmitted control signals to by one or more second resistances R2.In Figure 5, institute
State each transistor and be NMOS tube, the first control signal is called CTRLG, for controlling the grid of all transistors, i.e., before
The control end of these described transistors.In multiple serial transistors, the transistor M2N's of the input RFin of close switch
Used as signal input, the source electrode of the transistor M1 of output end RFout of close switch is used as signal output for drain electrode.When CTRLG is
High level, this series transistor M1 ... ..., M2N is both turned on so that the input signal of input RFin is conducted to output end
RFout, that is, switch now is to open.If CTRLG is low level, all transistors are turned off, now switch not
Conducting, that is, close.Although the n-th transistor Mn and the (n+1)th transistor Mn+1 can be any in this 2N serial transistor
Two adjacent transistors, it is preferred that in Figure 5, the value of n is N.In other words, in the 2N transistor connected of Fig. 5
In, the grid of two most middle transistors MN and MN+1 is used to connect to the first control signal CTRLG, such control signal
The time approximately equal being delivered to required for the neighbouring transistor M1 of RFin neighbouring transistor M2N and RFout so that lean on
The grid of the transistor M2N and M1 of nearly switch ends receives the delay of the first control signal CTRLG and is close to, and time delay performance is more
It is excellent.When N is even number, as shown in figure 5, the grid of N transistor MN and adjacent transistor MN-2 and MN+ with even number sequence number
2 are connected respectively by respective second resistance R2；The grid of N+1 transistor MN+1 is with adjacent with odd indexed
Transistor MN-1 is connected respectively with MN+3 by respective first resistor R1.If N is odd number, exist with Fig. 5 differences
In the grid of N transistor MN passes through respectively respective one with adjacent transistor MN-2 and MN+2 with odd indexed
First resistor R1 is connected；The grid of N+1 transistor MN+1 divides with adjacent transistor MN-1 and MN+3 with odd indexed
It is not connected by respective second resistance R2.Certainly, Fig. 5 is only an example, for receiving switch controlling signal
N-th transistor Mn and the (n+1)th transistor Mn+1 can also be allowed to his two adjacent transistors in switch, i.e. the value of n can
Not fix, this has no effect on the enforcement of the embodiment of the present invention.
It should be noted that " first " " second " or " n-th " mentioned in each embodiment of present invention offer is in itself
There are no art-recognized meanings, it is only for, so as to the annexation of each element of convenient description, itself is or not the different element of difference
For distinguishing manufacture craft, material or the parameter value of different elements.For example, any two have the crystal closest to odd indexed
Resistance between pipe can be called first resistor, itself and any two have closest to the resistance between the transistor of even number sequence number,
That is second resistance is different resistance, but first resistor does not have with second resistance on its resistance, manufacture craft and material are selected
Positive connection, both can have identical or different resistance, it is possible to use identical or different material.And, in the present embodiment
In, there may be multiple first resistors or second resistance, only by taking multiple first resistors as an example, the resistance of each first resistor can be with
It is identical, it is also possible to mutually different.Therefore, it should be appreciated by those skilled in the art that the first or second this kind of description itself should not be by
It is considered as the restriction to technical scheme.
Further, in order to improve the effect of resistive isolation, as shown in fig. 6, on the basis of Fig. 5, at most middle two
In transistor, the control end of the N transistor MN is coupled to first control signal CTRLG by 3rd resistor R3, and
The control end of the N+1 transistor MN+1 is coupled to first control signal CTRLG by the 4th resistance R4.When in Fig. 5
N transistor MN and N+1 transistor MN+1 are attached directly to CTRLG, if its isolation is still not enough, in order to improve isolation
Performance, can do with further increase resistance between CTRLG in the grid of the two transistors MN and MN+1 as Fig. 6 and isolate.
In figure 6 N is even number, then the resistance R3 for increasing can also connect to improve each serial number with one or more second resistances R2
The isolation of the transistor of even number to CTRLG；The resistance R4 of increase can also connect raising with one or more first resistors R1
The isolation of the transistor of each serial number odd number to CTRLG.
Further, on the basis of Fig. 6, Fig. 7 proposes a kind of improvement project.Of 3rd resistor R3 in Fig. 7
One end connects the control end of the N transistor MN, and the second end of 3rd resistor R3 connects the first end of the 5th resistance R5；
The first end of the 4th resistance R4 connects the control end of the N+1 transistor MN+1, and the second end for stating the 4th resistance R4 connects
Connect the first end of the 5th resistance R5；Second end of the 5th resistance R5 is coupled to first control signal CTRLG.
In Fig. 7, resistance R3 and R4 are further communicated to CTRLG by the resistance R5 so that the electricity of the grid of each transistor to CTRLG
Intercept from being even further improved by applying coatings.
Further, on the basis of Fig. 7, a kind of improved plan is as shown in figure 8, the control end of the N transistor MN
3rd resistor R3 is connected to by the 11st resistance R11, and the control end of the N transistors and is connected with the N transistors
Two 1 second resistances R2 be coupled by the 11st resistance R11.Specifically, due in Fig. 8 N be even number, N crystal
Pipe MN with the grid closest to even number sequence number adjacent transistor MN-2 and MN+2 respectively by respective second resistance R2 and
11st resistance R11 is connected with the N transistor MN grids, therefore the 11st resistance R11 is while 3rd resistor R3 is connected
It is also connected with two second resistances R2.The control end of the N+1 transistors is connected to the 4th resistance by the 12nd resistance R12
R4, and the control end of the N+1 transistors and at least one first resistor R1 that is connected with the N+1 transistors are by described
12nd resistance R12 is coupled.Specifically, due in Fig. 8 N+1 be odd number, N+1 transistor MN+1 with closest to odd number
Adjacent transistor MN-1 of sequence number and the grid of MN+3 respectively by respective first resistor R1 and the 12nd resistance R12 with this
N+1 transistor MN+1 grids connect, thus the 12nd resistance R12 be also connected with while the 4th resistance R4 is connected two it is first electric
Resistance R1.Because the transistor for receiving control signal is MN and MN+1, belong to switch and lean on paracentral transistor, therefore control signal
It is close seemingly through delay in the gate transport to two side transistors, be conducive to lifting switch performance.Certainly, if receiving control
Some transistor of signal is not proximate to the transistor in the middle of this chain of series transistor, and is proximate to the crystalline substance of switch ends
Body pipe, such as the first transistor M1, then the first transistor M1 only one of which is with third transistor M3 closest to odd indexed, institute
Now only connected with the gate isolation resistance R1 of a three transistor M3 by the 11st resistance R11 with the grid of the first transistor M1
Connect.
Further, can be that the substrate of each transistor increases resistive isolation, further to subtract on the basis of Fig. 8
Few substrate leakage current, on the basis of transistor gate resistive isolation, substrate isolation can further reach preferably every
From the effect of leakage current.Specifically as shown in figure 9, all transistors can be integrated in an integrated circuit, each transistor
The body (Body) of substrate i.e. integrated circuit.Any two have the substrate closest to the transistor of odd indexed to pass through the 6th resistance
R6 is coupled；Any two have the substrate closest to the transistor of even number sequence number to be coupled by the 7th resistance R7；Wherein, N is brilliant
The substrate of body pipe MN is coupled to the second control signal CTRLB in the switch controlling signal, and N+1 transistor MN+1
Substrate is coupled to second control signal CTRLB, and second control signal CTRLB is used to be sequentially connected in series the 2N
The substrate level of transistor control.It can be prior art that Automatic level control how is done to transistor substrate, be specific to Fig. 9
In transistor for, due to being NMOS tube, therefore CTRLB can be with one directly.
Alternatively, it is different from Fig. 9, if this 2N transistor is substituted by PMOS, then these transistors will be in grid
Cut-off when first control signal CTRLG of pole control signal, i.e. as described before is high level is closed so that entirely switching,
Conducting when CTRLG is low level so that whole switch is opened, the direct high level of CTRLB mono- now.
Certainly, CTRLB can be without a direct constant level.For example, still by taking Fig. 9 as an example, if CTRLG is high electricity
Flat, switch is opened, now CTRLB ground connection, i.e., level is zero；If CTRLG is low level, switch is closed, and now CTRLB connects negative
Level is reducing substrate leakage current.It is existing for how can refer to by more contents of CTRLB regulation transistor substrate level
Technology, the present embodiment is not repeated.
In fig .9, it is further to improve substrate isolation performance, the substrate of the N transistor MN passes through the 8th resistance
R8 is coupled to second control signal CTRLB, and the substrate of the N+1 transistor MN+1 is coupled to by the 9th resistance R9
Second control signal CTRLB.In order to further improve substrate isolation performance, the first end connection of the 8th resistance R8
The substrate of the N transistor MN, second end of the 8th resistance R8 connects the first end of the tenth resistance R10；Described 9th
The first end of resistance R9 connects the substrate of the N+1 transistor MN+1, and the second end for stating the 9th resistance R9 connects the tenth resistance
The first end of R10；Second end of the tenth resistance R10 is coupled to second control signal CTRLB.In fig .9,
The substrate of N transistor MN is coupled to CTRLB by multiple resistance, and isolation characteristic lifted, and the signal transmission of CTRLB is to two
Time delay required for the transistor at end is close to, and is conducive to optimizing performance.It is appreciated that due to substrate leakage of current principle with
Grid leakage current be similar to, therefore the structure that in fig .9 resistive isolation of substrate is adopted be with grid it is similar, gate isolation with
Substrate isolation is a kind of relation of symmetrical or near symmetrical.
It is appreciated that in Fig. 5 to Fig. 9, N is even number, N transistors MN has the crystalline substance closest to even number sequence number with other
Connected by second resistance R2 between the grid of body pipe, N+1 transistors MN+1 has the crystalline substance closest to odd indexed with other
The grid time of body pipe is connected by first resistor R1.If N is odd number, as shown in Figure 10, N transistors MN and have with it
Grid closest to the transistor MN-2 and MN+2 of odd indexed is connected respectively by respective first resistor R1, N+1 crystal
Pipe MN+1 and there is grid closest to the transistor MN-1 and MN+3 of even number sequence number respectively by respective second resistance R2 with it
Connection.Similarly, in Fig. 10, N transistors MN is electric by the respective 6th respectively with the substrate of transistor MN-2 and MN+2
Resistance R6 connections, N+1 transistors MN+1 is connected respectively with the substrate of transistor MN-1 and MN+3 by respective 7th resistance R7.
It should be noted that in the embodiment above, the 2N transistor being sequentially connected in series is adopted in the accompanying drawings
NMOS tube, it can be using PMOS, only by the electricity for changing CTRLG and CTRLB as also embodiment is mentioned before
Flat design can just realize the similar function of NMOS tube, and it specifically can also refer to the conventional design of this area.In a kind of design side
In case, for including the switch of multiple series connection PMOSs, switch is closed when CTRLG is high level, is switched when CTRLG is low level
Open, CTRLB can be with a direct high level.Or, CTRLB can be set to two times of high level when CTRLG is high level,
CTRLG is set to high level when being low level, preferably to suppress substrate leakage current.
Certainly, the type of the transistor for adopting in switch can also be not limited only to MOS transistor, or bipolar transistor
Pipe or high-velocity electrons mobility transistor etc..The transistor for no matter adopting which kind of technique to realize, does not affect the embodiment of the present invention
The enforcement of middle circuit structure, the present embodiment is by the multiple transistors to serial number odd number and multiple transistors of serial number even number
Gate resistance isolation and resistance substrate isolation are carried out respectively, realize the folding in terms of isolation performance and control signal transmission delay
In, being adapted to property of the level design adjustment of control signal CTRLG and CTRLB for controlling switch, i.e. CTRLG and CTRLB
Concrete level value can flexibly be set according to the difference of the concrete transistor types for adopting, this depends on and work needed for transistor is realized
Skill, specifically can refer to prior art, and the present embodiment is not repeated.
On the basis of embodiment before, Figure 11 gives a kind of structure rough schematic view of radio-frequency unit, the radio frequency dress
Putting 10 includes antenna 11, tuner 12 and radio frequency processing module 13.It is similar with Fig. 1 of the prior art, the radio frequency processing mould
Block 13 obtains the radio frequency letter for being modulated to the analog baseband signal that baseband processing chip or baseband processing module are produced
Number, and the radiofrequency signal is supplied to into the tuner 12.The modulated process is typically the process of a signal up-conversion,
Will analog baseband signal up-convert to the radiofrequency signal of higher frequency.Radio frequency processing module 13 can specifically pass through a transmitting chain
Road carries out the modulation operations, and certainly, the Fig. 1 being similar in background technology, the radio frequency processing module 13 can also be included to from day
The receives link that the signal that line is received is demodulated.
In fig. 11, after being modulated and obtaining radiofrequency signal, radiofrequency signal can pass through hilted broadsword to radio frequency processing module 13
Commutator is coupled to tuner 12.Certainly, if radio-frequency module is only also acceptable with transmission link, signal connects
The independent radio frequency processing modules implement that receipts can have receives link by another, is now also not necessarily required to single-pole double throw and opens
Close and switch between transmitting chain and receives link, because two independent radio-frequency modules can adopt different antennas.This
Figure 11 of bright embodiment essentially describes generation, tuning and the transmission process of radiofrequency signal, and recipient's formula is not limited.
Specifically, in fig. 11, tuner 12 is used to be tuned the impedance of antenna 11.Tuner 12 is by certain side
Formula is coupled to radio frequency processing module 13, and receives the radiofrequency signal from radio frequency processing module 13 and carry out radiofrequency signal tuning,
Signal after tuning is sent to antenna 11 so that the antenna 11 receives the signal after tuning, and sends after the tuning
Signal.Tuner 12 may include the capacitance tuning device 120 of at least two parallel connections, and each capacitance tuning device 120 includes：Input
End 121, for receiving radiofrequency signal；Capacitance tuning device 122, for being tuned the letter after being tuned to the radiofrequency signal
Number；Output end 123, for exporting the tuning after signal.The capacitance tuning device 122 includes：For believing the radio frequency
Number electric capacity being tuned 1222 and switch 1221, the switch 1221 is connected with the electric capacity 1222, both sequencings
Can adjust, be not fixed.It is described switch 1221 concrete structure can refer to before embodiment description, it can be in institute
Under stating switch controlling signal control, such as under the control of CTRLG, optionally by radiofrequency signal and the electric capacity 1222 be coupled with
It is tuned by 1222 pairs of radiofrequency signals of the electric capacity.Specifically, when a switch 1221 is opened, with the switch
The electric capacity 1222 of 1221 series connection is connected to radiofrequency signal and plays tuber function；When the switch 1221 is closed, radiofrequency signal
Not by with the electric capacity 1222, therefore electric capacity 1222 does not play adjustment effect.The electric capacity in arbitrary capacitance tuning device 120
1222 value to be adjusted by a capacitance control signal or can be arranged to constant.Can be electric if value of electric capacity 1222 is
Hold what control signal was adjusted, then the regulation of the capacitance of its capacitance tuning device 120 being located is more flexible, so as to cause to adjust
The capacity valve regulating range of humorous device 12 becomes big, reaches more preferable regulating effect.Certainly, under application scenes, in order to improve
The performance of tuning, the tuner 12 may also include：At least one inductance tuner, each inductance tuner includes one
Or multiple inductance, on the basis of the capacitance tuning device 120 of at least two parallel connections, adjusting to the electric capacity of at least two parallel connections
The radiofrequency signal or the signal after the tuning before the tuning of humorous device 120 is further tuned.Described at least one is electric
The sense tuner capacitance tuning device 120 in parallel with least two can be its concrete structure and connection in parallel or series
Relation depends on the selection of the performance and manufacturer industrially to be reached, and the present embodiment is not illustrated.Certainly, Figure 11 gives
What is gone out is only an example, and in implementing, 12 can also include that other are used to make the element of signal tuning in tuner,
Such as resistance or each transistorlike, the structure that tuner 12 itself is adopted does not interfere with provided in an embodiment of the present invention opening
Close the effect played in the tuner 12.Due to due to technique implementation complexity, radio frequency processing module 13 in Figure 11 with
Tuner 12 generally will not it is integrated on an integrated circuit.Tuner 12 itself can be integrated, wherein each components and parts
Can be made on one substrate by integrated circuit technology, but the present embodiment is not precluded from each first device in tuner 12
Part can be respectively placed in the scheme in different IC substrates.Transistor in the switch 1221 that embodiment is provided is typically
Integrate, that is, be placed on one piece of substrate, if certainly the different crystal pipe in switch 1221 is by integrated as difference
Be also acceptable in circuitry substrate, concrete manufacture craft that the present embodiment is adopted to each functional module or component or
Packaging technology is not limited.
Can be seen by above-described embodiment, before transmission by the tuning of tuner, it can be carried radiofrequency signal
The performance of high emission signal so that the impedance of antenna rf frequency preferably required for matching.In the tuner, when using opening
Pass is made when controlling with the capacitance for changing whole tuner to multiple fixations or variable capacitance, and the performance of switch is just critically important.This
Inventive embodiments have considered the substrate of switch and the suppression of grid leakage current, and switch controlling signal is being transmitted to some
The delay issue transmitted during rowed transistor so that switch performance reaches compromise, optimizes switch performance, so as to improve radio frequency dress
The emitting performance put.
It is appreciated that above-mentioned radio-frequency unit can be applied in all kinds of Wireless Telecom Equipments, such as base station, relay station, wirelessly
Terminal, FM (Frequency Modulation, frequency modulation(PFM)) equipment, bluetooth equipment or WiFi (Wireless Fidelity) equipment etc..Should
The application of device is not limited by wireless communication protocol, can be widely used in all kinds of wireless communication protocols, and such as LTE (is drilled for a long time
Enter), WCDMA (WCDMA), WiFi, in bluetooth or GSM (global system for mobile communications) standard.When described device application
When in a wireless terminal, the form of terminal can be kneetop computer, panel computer, smart mobile phone, data card or intercom
Deng the present embodiment is not restricted to this.
The application effect that the construction of switch that the present embodiment is provided can reach in high frequency, radio circuit, particularly exists
In the circuit of radio-frequency unit, but, the switch can also be applied to some other scene, such as be applied to phaselocked loop, sensor
Sampling and reading circuit etc., be not limited solely to the application scenarios that Figure 11 is provided.
In addition, " coupling " or " connection " is understood as that arbitrary form can be passed through between the different elements mentioned of the present embodiment
Connection, such as by wire connection or by other one or more elements connection, and be not only directly by wire phase
Even.
The foregoing is only several embodiments of the present invention, those skilled in the art is according to can be with disclosed in application documents
The present invention is carried out it is various change or modification without departing from the spirit and scope of the present invention.Those of ordinary skill in the art can manage
Solve between the embodiment or can be combined with each other to form new reality in the case where not clashing between the feature of different embodiments
Apply example.
Claims (18)
1. it is a kind of to switch, it is characterised in that to include：The 2N transistor being sequentially connected in series, the 2N transistor being sequentially connected in series
Including the first transistor to 2N transistors, N is the integer more than or equal to 2；The 2N transistor being sequentially connected in series is divided into
Odd number group transistor and the transistor of even number set；Wherein, the transistor of the odd number group includes the first transistor, the 3rd brilliant
Body pipe ..., 2N-1 transistors；The transistor of the even number set include transistor seconds, the 4th transistor ..., 2N
Transistor；
In the transistor of the odd number group, any two have the control end closest to the transistor of odd indexed to pass through first resistor
It is coupled；
In the transistor of the even number set, any two have the control end closest to the transistor of even number sequence number to pass through second resistance
It is coupled；
In the transistor that the 2N is sequentially connected in series, the control end of the n-th transistor is coupled to the in switch controlling signal
One control signal, and the control end of the (n+1)th transistor is coupled to first control signal, wherein, n be more than or equal to 1 and
An integer less than or equal to 2N-1, first control signal is used to control the on and off of the switch.
2. switch according to claim 1, it is characterised in that the control end of n-th transistor is coupled by 3rd resistor
Believed coupled to the described first control by the 4th resistance to first control signal, and the control end of (n+1)th transistor
Number.
3. switch according to claim 2, it is characterised in that the first end of the 3rd resistor connects n-th transistor
Control end, the second end of the 3rd resistor connects the first end of the 5th resistance；The first end connection institute of the 4th resistance
The control end of the (n+1)th transistor is stated, the second end for stating the 4th resistance connects the first end of the 5th resistance；5th resistance
The second end be coupled to first control signal.
4. switch according to claim 3, it is characterised in that n is further an odd number；
The control end of n-th transistor is connected to the 3rd resistor, and the control of n-th transistor by the 11st resistance
End processed and at least one first resistor being connected with n-th transistor are coupled by the 11st resistance；
The control end of (n+1)th transistor is connected to the 4th resistance, and the control of (n+1)th transistor by the 12nd resistance
End processed and at least one second resistance being connected with (n+1)th transistor are coupled by the 12nd resistance.
5. switch according to claim 3, it is characterised in that n is further an even number；
The control end of n-th transistor is connected to the 3rd resistor, and the control of n-th transistor by the 11st resistance
End processed and at least one second resistance being connected with n-th transistor are coupled by the 11st resistance；
The control end of (n+1)th transistor is connected to the 4th resistance, and the control of (n+1)th transistor by the 12nd resistance
End processed and at least one first resistor being connected with (n+1)th transistor are coupled by the 12nd resistance.
6. switched according to any one of claim 1 to 5, it is characterised in that in the transistor of the odd number group, wantonly two
The individual substrate having closest to the transistor of odd indexed is coupled by the 6th resistance；
In the transistor of the even number set, any two have the substrate closest to the transistor of even number sequence number to pass through the 7th resistance phase
Coupling；
Wherein, the substrate of the n-th transistor is coupled to the second control signal in the switch controlling signal, and the (n+1)th crystal
The substrate of pipe is coupled to second control signal, and second control signal is used for the 2N crystal being sequentially connected in series
The substrate level of pipe is controlled.
7. switch according to claim 6, it is characterised in that the substrate of n-th transistor is coupled to by the 8th resistance
Second control signal, and the substrate of (n+1)th transistor is coupled to second control signal by the 9th resistance.
8. switch according to claim 7, it is characterised in that the first end of the 8th resistance connects n-th transistor
Substrate, the second end of the 8th resistance connects the first end of the tenth resistance；The first end connection of the 9th resistance is described
The substrate of the (n+1)th transistor, the second end for stating the 9th resistance connects the first end of the tenth resistance；The of tenth resistance
Two ends are coupled to second control signal.
9. switch according to claim 8, it is characterised in that n is further an odd number；
The substrate of n-th transistor is connected to the 8th resistance by the 13rd resistance, and the substrate of n-th transistor and with
At least one the 6th connected resistance of n-th transistor are coupled by the 13rd resistance；
The substrate of (n+1)th transistor is connected to the 9th resistance, and the substrate of (n+1)th transistor by the 14th resistance
And at least one the 7th resistance being connected with (n+1)th transistor are coupled by the 14th resistance.
10. switch according to claim 8, it is characterised in that n is further an even number；
The substrate of n-th transistor is connected to the 8th resistance by the 13rd resistance, and the substrate of n-th transistor and with
At least one the 7th connected resistance of n-th transistor are coupled by the 13rd resistance；
The substrate of (n+1)th transistor is connected to the 9th resistance, and the substrate of (n+1)th transistor by the 14th resistance
And at least one the 6th resistance being connected with (n+1)th transistor are coupled by the 14th resistance.
11. switch according to any one of claim 1 to 5, it is characterised in that the value of n is specially N.
12. switch according to any one of claim 1 to 5, it is characterised in that the 2N transistor being sequentially connected in series
For：Bipolar transistor, metal oxide semiconductor transistor or high-velocity electrons mobility transistor.
A kind of 13. tuners of antenna, including the capacitance tuning device of at least two parallel connections, each capacitance tuning device includes：
Input, for receiving radiofrequency signal；Capacitance tuning device, for being tuned the letter after being tuned to the radiofrequency signal
Number；Output end, for exporting the tuning after signal；
The capacitance tuning device includes：For the electric capacity being tuned to the radiofrequency signal and according in claim 1 to 10
Switch described in any one, described to switch and the capacitances in series, the switch can be selected under switch controlling signal control
Selecting property the radiofrequency signal and the electric capacity are coupled to be tuned the radiofrequency signal by the electric capacity.
14. according to claim 13 tuner, it is characterised in that the tuner also includes：At least one inductance is tuned
Device, each inductance tuner includes one or more inductance, in the base of the capacitance tuning device of at least two parallel connections
On plinth, the signal to the radiofrequency signal before the capacitance tuning device tuning of at least two parallel connections or after the tuning enters to advance
One step is humorous.
15. according to claim 13 or 14 tuner, it is characterised in that the value of the electric capacity can be by capacitance control signal
Adjust.
16. according to claim 13 or 14 tuner, it is characterised in that the value of the electric capacity is for constant.
17. a kind of radio-frequency units, it is characterised in that tune including antenna and according to any one of claim 13 to 16
Device；
The antenna is used to receive the signal after the tuning from the tuner, and sends the signal after the tuning.
18. according to claim 17 radio-frequency unit, it is characterised in that also include：Radio frequency processing module, for believing base band
Number it is modulated and obtains the radiofrequency signal, and the radiofrequency signal is supplied to into the tuner.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410197743.2A CN103986450B (en) | 2014-05-12 | 2014-05-12 | Switch, tuner of antenna and radio frequency device |
| EP15166843.1A EP2945287B1 (en) | 2014-05-12 | 2015-05-07 | Switch, antenna tuner, and radio frequency apparatus |
| US14/710,244 US9899988B2 (en) | 2014-05-12 | 2015-05-12 | Switch, antenna tuner, and radio frequency apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410197743.2A CN103986450B (en) | 2014-05-12 | 2014-05-12 | Switch, tuner of antenna and radio frequency device |
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| Publication Number | Publication Date |
|---|---|
| CN103986450A CN103986450A (en) | 2014-08-13 |
| CN103986450B true CN103986450B (en) | 2017-04-12 |
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|---|---|---|---|
| CN201410197743.2A Active CN103986450B (en) | 2014-05-12 | 2014-05-12 | Switch, tuner of antenna and radio frequency device |
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|---|---|
| US (1) | US9899988B2 (en) |
| EP (1) | EP2945287B1 (en) |
| CN (1) | CN103986450B (en) |
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2015
- 2015-05-07 EP EP15166843.1A patent/EP2945287B1/en active Active
- 2015-05-12 US US14/710,244 patent/US9899988B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8008988B1 (en) * | 2008-02-20 | 2011-08-30 | Triquint Semiconductor, Inc. | Radio frequency switch with improved intermodulation distortion through use of feed forward capacitor |
| CN101794793A (en) * | 2009-01-29 | 2010-08-04 | 株式会社瑞萨科技 | Semiconductor device |
| CN101702627A (en) * | 2009-10-29 | 2010-05-05 | 华东师范大学 | CMOS radio frequency (RF) switch based on silicon-on-insulator (SOI) technology |
| US9209801B2 (en) * | 2012-11-01 | 2015-12-08 | Renesas Electronics Corporation | High frequency switch circuit including gate bias resistances |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150326207A1 (en) | 2015-11-12 |
| EP2945287B1 (en) | 2018-02-28 |
| CN103986450A (en) | 2014-08-13 |
| EP2945287A1 (en) | 2015-11-18 |
| US9899988B2 (en) | 2018-02-20 |
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