CN107395174A - The stacked circuit and RF switch of a kind of RF switch - Google Patents
The stacked circuit and RF switch of a kind of RF switch Download PDFInfo
- Publication number
- CN107395174A CN107395174A CN201710772292.4A CN201710772292A CN107395174A CN 107395174 A CN107395174 A CN 107395174A CN 201710772292 A CN201710772292 A CN 201710772292A CN 107395174 A CN107395174 A CN 107395174A
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- China
- Prior art keywords
- transistor
- legs
- stacked circuit
- resistance
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
Abstract
The invention discloses a kind of stacked circuit of RF switch, RF switch includes biasing module, radio frequency input module and radio frequency output module, the first transistor branch road that stacked circuit includes being sequentially connected in series, second transistor branch road are until N transistor legs, every transistor legs include transistor, N is the integer not less than 3, wherein：The size of transistor in the first transistor branch road and the size of the transistor in N transistor legs are all higher than the size of the transistor in other transistor legs.The present invention is under the premise of ensureing that chip size is equirotal, by the transistor size for increasing both sides in stacked circuit, reduce its high voltage born, new parasitic capacitance will not be introduced, cause that the partial pressure of each transistor in stacked circuit is more uniform simultaneously, so as to lift the voltage endurance capability of stacked circuit, the service life of RF switch is improved.The invention also discloses a kind of RF switch, has above-mentioned beneficial effect.
Description
Technical field
The present invention relates to the communications field, more particularly to the stacked circuit and RF switch of a kind of RF switch.
Background technology
With the development of mobile communication technology, there is a variety of communication standards and the situation deposited, therefore, mobile terminal is assembled
Into the radio-frequency power amplifier of multiple patterns and frequency range, and required power amplifier is selected by RF switch, establish signal
Transmission channel, with realize switch between different communication network.RF switch is made up of switch core and switch controller, switchs core
Including a plurality of stacked circuit, every stacked circuit is in series by multiple transistor legs.Due to the crystalline substance of stacked circuit both sides
The voltage that body pipe branch road is born is higher, so the transistor of both sides is easier to damage while can also holding because of each transistor
Voltage endurance capability that is uneven and causing stacked circuit is pressed to reduce.
Reference picture 1, the first transistor branch road, the second transistor branch road that stacked circuit includes being sequentially connected in series are until N
Transistor legs, the input and radio frequency input of the source or drain electrode pole of the transistor in the first transistor branch road as stacked circuit
The output end of module connects, and the drain electrode of the transistor in N transistor legs exports as the output end of stacked circuit with radio frequency
The input connection of module, the grid of the transistor in N number of transistor legs are connected with each other, and the of its common port and biasing module
One output end is connected, and the substrate of the transistor in N number of transistor legs is connected with each other, and the second of its common port and biasing module is defeated
Go out end connection.Prior art is generally by between the grid source of the transistor in each transistor legs and/or between grid leak
All compensate a certain size feed-forward capacitance CFFC, make the voltage that each transistor is born in each stacked circuit uniform.But with
More multi-communication mode and frequency range are integrated into single mobile terminal, and the stacked circuit needed in RF switch persistently increases, and use
Scheme of the prior art can take very big chip area, while can also introduce significant parasitic capacitance, in some instances it may even be possible to can make
Into RF switch failure.
Therefore, how to provide a kind of scheme for solving above-mentioned technical problem is that those skilled in the art need to solve at present
Problem.
The content of the invention
It is an object of the invention to provide a kind of stacked circuit of RF switch, is ensureing the equirotal premise of chip size
Under, by increasing the transistor size of both sides in stacked circuit, its high voltage born is reduced, new parasitism electricity will not be introduced
Hold, while make it that the partial pressure of each transistor in stacked circuit is more uniform, so as to lift the voltage endurance capability of stacked circuit, improve
The service life of RF switch.It is a further object of the present invention to provide a kind of RF switch.
In order to solve the above technical problems, the invention provides a kind of stacked circuit of RF switch, the RF switch bag
Biasing module, radio frequency input module and radio frequency output module are included, the stacked circuit includes the first transistor branch being sequentially connected in series
Until N transistor legs, every transistor legs include transistor, N is not less than 3 for road, second transistor branch road
Integer, wherein：
The size of transistor in the first transistor branch road and the size of the transistor in N transistor legs are big
The size of transistor in other described transistor legs.
Preferably, every transistor legs also include first resistor, the first end of the first resistor with it is described partially
Put the first output end connection of module, the second end of the first resistor and the grid of the transistor in transistor legs where it
Connection.
Preferably, the first electricity in the resistance and N transistor legs of the first resistor in the first transistor branch road
The resistance of resistance is all higher than the resistance of the first resistor in other described transistor legs.
Preferably, every transistor legs also include second resistance, the first end of the second resistance and its place
The substrate connection of transistor in transistor legs, the second end of the second resistance and the second output end of the biasing module
Connection.
Preferably, the second electricity in the resistance and N transistor legs of the second resistance in the first transistor branch road
The resistance of resistance is all higher than the resistance of second resistance in other described transistor legs.
Preferably, every transistor legs also include feed-forward capacitance, the first end of the feed-forward capacitance and its place
Second end of the grid of the transistor in transistor legs and the first resistor connect, the second end of the feed-forward capacitance and its
The source/drain connection of transistor in the road of the transistor at place.
Preferably, the capacitance of the feed-forward capacitance in N number of transistor legs is successively decreased by two lateral centres in ratio.
Preferably, the resistance of the resistance in N number of transistor legs is successively decreased by two lateral centres in ratio.
Preferably, the size of the transistor in N number of transistor legs is successively decreased by two lateral centres in ratio.
In order to solve the above-mentioned technical problem, present invention also offers a kind of RF switch, including above-mentioned stacked circuit.
A kind of stacked circuit of RF switch provided by the invention, RF switch include biasing module, radio frequency input module
With radio frequency output module, the first transistor branch road that stacked circuit includes being sequentially connected in series, second transistor branch road are until N crystal
Pipe branch road, every transistor legs include transistor, and N is the integer not less than 3, wherein：Crystal in the first transistor branch road
The size of pipe and the size of the transistor in N transistor legs are all higher than the size of the transistor in other transistor legs.
It can be seen that under the premise of ensureing that chip size is equirotal, passed through using the scheme of the application in actual applications
Increase the transistor size of both sides in stacked circuit so that gate-source capacitance and the gate leakage capacitance increase of two side transistors itself, from
And its high voltage born is reduced, new parasitic capacitance will not be introduced, while cause the partial pressure of each transistor in stacked circuit
More uniformly, so as to lift the voltage endurance capability of stacked circuit, the service life of RF switch is improved.
Present invention also offers a kind of RF switch, has such as above-mentioned stacked circuit identical beneficial effect.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, below will be to institute in prior art and embodiment
The accompanying drawing needed to use is briefly described, it should be apparent that, drawings in the following description are only some implementations of the present invention
Example, for those of ordinary skill in the art, on the premise of not paying creative work, can also be obtained according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 is a kind of structural representation of traditional RF switch stacked circuit；
Fig. 2 is a kind of structural representation of RF switch stacked circuit provided by the present invention；
Fig. 3 is a kind of another structural representation of RF switch stacked circuit provided by the present invention.
Embodiment
The core of the present invention is to provide a kind of stacked circuit of RF switch, is ensureing the equirotal premise of chip size
Under, by increasing the transistor size of both sides in stacked circuit, its high voltage born is reduced, new parasitism electricity will not be introduced
Hold, while make it that the partial pressure of each transistor in stacked circuit is more uniform, so as to lift the voltage endurance capability of stacked circuit, improve
The service life of RF switch.Another core of the present invention is to provide a kind of RF switch.
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Reference picture 2, Fig. 2 are a kind of structural representation of RF switch stacked circuit provided by the present invention, RF switch
Including biasing module, radio frequency input module and radio frequency output module, stacked circuit includes the first transistor branch road being sequentially connected in series
1st, for second transistor branch road 2 until N transistor legs N, every transistor legs include transistor, N is whole not less than 3
Number, wherein：
The size of transistor in the first transistor branch road 1 and the size of the transistor in N transistor legs N are all higher than
The size of transistor in other transistor legs.
Specifically, the stacked circuit in the present invention refers to parallel branch or series arm on RF switch main circuit, it is brilliant
The gate-source capacitance and gate leakage capacitance of body pipe are determined by the size of transistor itself, when transistor size increases, its grid source
Electric capacity and gate leakage capacitance can also increase therewith, and in actual applications, the pressure-bearing of the transistor of stacked circuit both sides is maximum, sheet
The size of transistor in transistor legs of the invention by increasing stacked circuit both sides, increase the gate-source capacitance of two side transistors
And gate leakage capacitance, to reduce the high voltage that two side transistors are born so that the partial pressure of each transistor is more uniform in stacked circuit,
So as to improve the voltage endurance capability of stacked circuit, and the linearity is improved to a certain extent.
Because the environment of RF switch application may be different, the voltage that its internal each stacked circuit is born is also different,
The size of transistor will be designed optimization according to the actual requirements, so concrete numerical value of the present invention to the size of transistor
Do not limit.
A kind of stacked circuit for RF switch that the application provides, RF switch include biasing module, radio frequency input module
With radio frequency output module, the first transistor branch road that stacked circuit includes being sequentially connected in series, second transistor branch road are until N crystal
Pipe branch road, every transistor legs include transistor, and N is the integer not less than 3, wherein：Crystal in the first transistor branch road
The size of pipe and the size of the transistor in N transistor legs are all higher than the size of the transistor in other transistor legs.
It can be seen that under the premise of ensureing that chip size is equirotal, passed through using the scheme of the application in actual applications
Increase the transistor size of both sides in stacked circuit so that gate-source capacitance and the gate leakage capacitance increase of two side transistors itself, from
And its high voltage born is reduced, new parasitic capacitance will not be introduced, while cause the partial pressure of each transistor in stacked circuit
More uniformly, so as to lift the voltage endurance capability of stacked circuit, the service life of RF switch is improved.
Fig. 3 is refer to, Fig. 3 is a kind of another structural representation of RF switch stacked circuit provided by the present invention,
The stacked circuit is on the basis of above-described embodiment：
As a kind of preferred embodiment, every transistor legs also include first resistor, the first end of first resistor with
The first output end connection of biasing module, the second end of first resistor and the grid of the transistor in transistor legs where it connect
Connect.
Specifically, each transistor legs in stacked circuit also include first resistor, the grid of each transistor passes through
First resistor links together, and first resistor mainly plays buffer action, for reducing the electric current of transistor gate, so as to protect it
Transistor on the branch road of place is not damaged by.
Except that can also include other devices including first resistor in certain each transistor legs, the present invention does not limit herein
It is fixed.
As a kind of preferred embodiment, the resistance and N transistor legs of the first resistor in the first transistor branch road 1
The resistance of first resistor in N is all higher than the resistance of the first resistor in other transistor legs.
Specifically, the resistance by increasing first resistor in the transistor legs of both sides in stacked circuit, can further drop
The high voltage that low two side transistor is born so that the partial pressure of each transistor is more reasonable in stacked circuit, and electricity is stacked so as to improve
The voltage endurance capability on road.
As a kind of preferred embodiment, every transistor legs also include second resistance, the first end of second resistance with
The substrate connection of transistor in transistor legs where it, the second end of second resistance and the second output end of biasing module connect
Connect.
Specifically, each transistor legs in stacked circuit also include second resistance, the substrate of each transistor passes through
Second resistance links together, and second resistance mainly plays buffer action, for reducing the electric current of transistor substrate, so as to protect it
Transistor on the branch road of place is not damaged by.
Except that can also include other devices including second resistance in certain each transistor legs, the present invention does not limit herein
It is fixed.
As a kind of preferred embodiment, the resistance and N transistor legs of the second resistance in the first transistor branch road 1
The resistance of second resistance in N is all higher than the resistance of second resistance in other transistor legs.
Specifically, the resistance by increasing second resistance in the transistor legs of both sides in stacked circuit, can further drop
The high voltage that low two side transistor is born so that the partial pressure of each transistor is more reasonable in stacked circuit, and electricity is stacked so as to improve
The voltage endurance capability on road.
As a kind of preferred embodiment, every transistor legs also include feed-forward capacitance, the first end of feed-forward capacitance with
The grid of transistor in transistor legs where it and the second end connection of first resistor, the second end of feed-forward capacitance and its institute
Transistor road in transistor source/drain connection.
Specifically, on the basis of transistor size in optimizing both sides transistor legs, can also be in every transistor
A small amount of feed-forward capacitance is compensated on branch road, makes the partial pressure of each transistor in stacked circuit more uniform, improves the pressure-resistant of branch road
Ability and the linearity, while will not also increase chip area.
Except that can also include other devices including electric capacity in certain each transistor legs, the present invention does not limit herein.
As a kind of preferred embodiment, the capacitance of the feed-forward capacitance in N number of transistor legs is in by two lateral centres
Ratio is successively decreased.
Specifically, the capacitance of the feed-forward capacitance on N bar transistor legs is successively decreased by two lateral centres in ratio, further
Feed-forward capacitance is reduced, very big chip area will not also be taken by increasing even if the stacked circuit of RF switch, further be improved
The linearity.
Specifically, when stacked circuit is in series by N number of transistor legs, the preceding feed compensated in each transistor legs
Capacitance is the T of unit capacitanceNTimes, it is assumed that N=12, T6=T7；Work as n=1, when 2 ... 5, then Tn+1/Tn=1/2；Work as n=8,
When 9 ... 12, Tn/Tn-1=2, wherein, TNFor the proportionality coefficient being designed to the feed-forward capacitance of each transistor legs during optimization.
Because the environment of RF switch application may be different, so the present invention is to TNNumerical value do not limit.
As a kind of preferred embodiment, the resistance of the resistance in N number of transistor legs is passed by two lateral centres in ratio
Subtract.
Specifically, the resistance of first resistor and second resistance is passed by two lateral centres in ratio on N bar transistor legs
Subtract, while ensureing to be not take up very big chip area, make the partial pressure of each transistor more uniform, further improve line
Property degree.
Specifically, stacked circuit is in series by N number of transistor legs, first resistor and second in each transistor legs
The resistance of resistance is the L of unit resistanceNTimes, it is assumed that N=12, L6=L7；Work as n=1, when 2 ... 5, then Ln+1/Ln=1/2, work as n=
When 8,9 ... 12, Ln/Ln-1=2, wherein, LNDuring to be designed optimization to each transistor legs first resistor and second resistance
Proportionality coefficient.
Because the environment of RF switch application may be different, so the present invention is to LNNumerical value do not limit.
As a kind of preferred embodiment, the size of the transistor in N number of transistor legs by two it is lateral among be in ratio
Successively decrease.
Specifically, on the basis of ensureing that chip area is constant, by the ratio for increasing transistor size in stacked circuit
Coefficient, increase the gate-source capacitance and gate leakage capacitance of their own, to reduce the high voltage that each transistor is born so that stack electricity
The partial pressure of each transistor is more uniform in road, further improves the linearity.
Specifically, when stacked circuit is in series by N number of transistor legs, the size of transistor in each transistor legs
For the K of unit sizeNTimes, it is assumed that N=12, K6=K7；Work as n=1, when 2 ... 5, then Kn+1/Kn=1/2, work as n=8,9 ... 12
When, Kn/Kn-1=2, wherein, KNFor the proportionality coefficient being designed to the resistance of each transistor legs during optimization.
Because the environment of RF switch application may be different, so the present invention is to KNNumerical value do not limit.
In order to solve the above-mentioned technical problem, present invention also offers a kind of RF switch, including above-mentioned stacked circuit.
Above-described embodiment is refer to for a kind of introduction of RF switch provided by the present invention, the present invention is no longer superfluous herein
State.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.For device disclosed in embodiment
For, because it is corresponded to the method disclosed in Example, so description is fairly simple, related part is said referring to method part
It is bright.
It should also be noted that, in this manual, such as first and second or the like relational terms be used merely to by
One entity or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or operation
Between any this actual relation or order be present.Moreover, term " comprising ", "comprising" or its any other variant meaning
Covering including for nonexcludability, so that process, method, article or equipment including a series of elements not only include that
A little key elements, but also the other element including being not expressly set out, or also include for this process, method, article or
The intrinsic key element of equipment.In the absence of more restrictions, the key element limited by sentence "including a ...", is not arranged
Except other identical element in the process including the key element, method, article or equipment being also present.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (10)
1. a kind of stacked circuit of RF switch, the RF switch includes biasing module, radio frequency input module and radio frequency output
Module, it is characterised in that the first transistor branch road that the stacked circuit includes being sequentially connected in series, second transistor branch road are until the
N transistor legs, every transistor legs include transistor, and N is the integer not less than 3, wherein：
The size of transistor and the size of the transistor in N transistor legs in the first transistor branch road are all higher than it
The size of transistor in his transistor legs.
2. stacked circuit according to claim 1, it is characterised in that every transistor legs also include the first electricity
Resistance, the first end of the first resistor is connected with the first output end of the biasing module, the second end of the first resistor and
The grid connection of transistor in transistor legs where it.
3. stacked circuit according to claim 2, it is characterised in that first resistor in the first transistor branch road
The resistance of resistance and the first resistor in N transistor legs is all higher than the resistance of the first resistor in other described transistor legs
Value.
4. stacked circuit according to claim 2, it is characterised in that every transistor legs also include the second electricity
Resistance, the first end of the second resistance are connected with the substrate of the transistor in transistor legs where it, the second resistance
Second end is connected with the second output end of the biasing module.
5. stacked circuit according to claim 4, it is characterised in that second resistance in the first transistor branch road
The resistance of resistance and the second resistance in N transistor legs is all higher than the resistance of second resistance in other described transistor legs
Value.
6. stacked circuit according to claim 4, it is characterised in that every transistor legs also include preceding feed
Hold, the second of the grid and the first resistor of the first end of the feed-forward capacitance and the transistor in transistor legs where it
End connection, the second end of the feed-forward capacitance is connected with the source/drain of the transistor in the road of the transistor where it.
7. stacked circuit according to claim 6, it is characterised in that feed-forward capacitance in N number of transistor legs
Capacitance is successively decreased by two lateral centres in ratio.
8. stacked circuit according to claim 4, it is characterised in that the resistance of the resistance in N number of transistor legs
Successively decreased by two lateral centres in ratio.
9. according to the stacked circuit described in claim any one of 1-8, it is characterised in that the crystalline substance in N number of transistor legs
The size of body pipe is successively decreased by two lateral centres in ratio.
10. a kind of RF switch, it is characterised in that including the stacked circuit as described in claim any one of 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710772292.4A CN107395174A (en) | 2017-08-31 | 2017-08-31 | The stacked circuit and RF switch of a kind of RF switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710772292.4A CN107395174A (en) | 2017-08-31 | 2017-08-31 | The stacked circuit and RF switch of a kind of RF switch |
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| Publication Number | Publication Date |
|---|---|
| CN107395174A true CN107395174A (en) | 2017-11-24 |
Family
ID=60347466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710772292.4A Pending CN107395174A (en) | 2017-08-31 | 2017-08-31 | The stacked circuit and RF switch of a kind of RF switch |
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Cited By (5)
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| CN108736847A (en) * | 2018-07-24 | 2018-11-02 | 成都嘉纳海威科技有限责任公司 | High efficiency based on the control of accurate resonance circuit stacks power amplifier against D classes |
| CN109245747A (en) * | 2018-11-30 | 2019-01-18 | 惠州华芯半导体有限公司 | Radio-frequency switch circuit, switch chip and communication terminal |
| WO2020224057A1 (en) * | 2019-05-09 | 2020-11-12 | 河源广工大协同创新研究院 | Radio frequency switching circuit structure having high linearity and low harmonic |
| CN112260671A (en) * | 2020-12-08 | 2021-01-22 | 南京元络芯科技有限公司 | Integrated radio frequency switch with gate voltage rebalancing |
| CN114244330A (en) * | 2021-11-26 | 2022-03-25 | 上海迦美信芯通讯技术有限公司 | Superposition circuit and radio frequency switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108736847A (en) * | 2018-07-24 | 2018-11-02 | 成都嘉纳海威科技有限责任公司 | High efficiency based on the control of accurate resonance circuit stacks power amplifier against D classes |
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| WO2020224057A1 (en) * | 2019-05-09 | 2020-11-12 | 河源广工大协同创新研究院 | Radio frequency switching circuit structure having high linearity and low harmonic |
| CN112260671A (en) * | 2020-12-08 | 2021-01-22 | 南京元络芯科技有限公司 | Integrated radio frequency switch with gate voltage rebalancing |
| CN114244330A (en) * | 2021-11-26 | 2022-03-25 | 上海迦美信芯通讯技术有限公司 | Superposition circuit and radio frequency switch |
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