CN103985772A - Method for manufacturing high-performance crystalline silicon cell - Google Patents
Method for manufacturing high-performance crystalline silicon cell Download PDFInfo
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- CN103985772A CN103985772A CN201410141989.8A CN201410141989A CN103985772A CN 103985772 A CN103985772 A CN 103985772A CN 201410141989 A CN201410141989 A CN 201410141989A CN 103985772 A CN103985772 A CN 103985772A
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- 238000000034 method Methods 0.000 title abstract description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 239000013078 crystal Substances 0.000 claims description 67
- 229910052710 silicon Inorganic materials 0.000 claims description 67
- 239000010703 silicon Substances 0.000 claims description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 66
- 238000002360 preparation method Methods 0.000 claims description 19
- 230000000977 initiatory effect Effects 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- 238000007650 screen-printing Methods 0.000 description 8
- 230000005611 electricity Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000010422 painting Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for manufacturing a high-performance crystalline silicon cell. According to the method for manufacturing the high-performance crystalline silicon cell, the positive electrode, composed of n positive electrode bodies with the same width, of a conventional crystalline silicon cell is converted into the positive electrode which is formed by alternately connecting narrow positive electrode bodies and wide positive electrode bodies, wherein the sum of the number of the narrow positive electrode bodies and the number of the wide positive electrode bodies is n', each positive electrode starts at the corresponding narrow electrode body and ends at the corresponding narrow electrode, the width of the narrow positive electrode body at the starting end and the width of the narrow positive electrode body at the ending end range from 0.08 mm to 0.3 mm, the width of the narrow positive electrode bodies between the narrow positive electrode body at the starting end and the narrow positive electrode body at the ending end is half the width of the narrow positive electrode body at the starting end or the narrow positive electrode body at the ending end, the width W' of each wide positive electrode body ranges from 0.5 mm to 2.0 mm, and the width W of the positive electrode bodies, with the same width, of the conventional crystalline silicon cell ranges from 1.5 mm to 4.0 mm, and n<=n'<=2W/W'. According to the method for manufacturing the high-performance crystalline silicon cell, the area occupied by metal of the positive electrode can be reduced, consumption of metallic silver can be reduced, and the technical problems that the series resistance of a crystalline silicon cell on the preset market is high, and the conventional efficiency is low are solved.
Description
Technical field
The invention belongs to technical field of solar batteries, be specifically related to a kind of preparation method of high-performance crystal silicon solar energy battery.
Background technology
Along with the variation of international photovoltaic market form, the competition of photovoltaic industry is more and more fierce, and high-performance crystal silicon cell is paid close attention to by everybody more and more, becomes the key that enterprise depends on for existence.Current existing crystal silicon cell is generally also adopting continuous positive electrode design, as shown in Figure 1, positive electrode quantity is using 2-3 bar as main flow, wherein 6 ' and 6.5 ' taking 2 as main, 8 ' taking 3 as main, according to the requirement of the feature of crystal silicon cell positive electrode and high-performance crystal silicon cell, also there is very large optimization space in main grid design aspect.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of high-performance crystal silicon solar energy battery, this preparation method can reduce positive electrode metal area occupied, reduce consumption to argent, and it is large to solve the series resistance of crystal silicon cell in the market, the technical problem that transformation efficiency is low.
Above-mentioned purpose of the present invention is achieved by the following technical solution: a kind of preparation method of high-performance crystal silicon solar energy battery, that the positive electrode of conventional crystal silicon cell is changed to the positive electrode that n ' bar is alternately formed by connecting by narrow positive electrode and wide positive electrode by the positive electrode of n bar single-width, every positive electrode all originates in narrow positive electrode and ends at narrow positive electrode, wherein the width of initiating terminal and the narrow positive electrode of clearing end is 0.08 ~ 0.3mm, the width of middle narrow positive electrode is 1/2 of initiating terminal or the narrow positive electrode of clearing end, the width W of wide positive electrode ' be 0.5 ~ 2.0mm, the width W of the positive electrode of the single-width of conventional crystal silicon cell is 1.5 ~ 4.0mm, described n≤n '≤2W/ W '.
The present invention is mainly for the design of the positive electrode of battery and thin grid, adopts the two aspect parameters improvement battery performance that combines:
The one, be three kinds of patterns that width positive electrode replaces by positive electrode by continuous design alteration, two ends are narrow positive electrode, alternately connect toward wide, the narrow positive electrode in middle part, the 2nd, reduce positive electrode width, increase positive electrode quantity, these two kinds of technical schemes can be used as and coordinate the project changing, and positive electrode is parallel and symmetrical along the axis of crystal silicon chip all the time.
By this two aspects adjustment, by reducing the metallization area of positive electrode, can reduce positive electrode blocking light, increase the current density, J sc of battery, and positive electrode centre-to-centre spacing reduces, electric current motion arrives positive electrode desired path and reduces, can reduce like this thermal losses of thin grid to electric current, improve current flowing amount, thereby improve battery and assembly fill factor, curve factor, to better optimization component generating efficiency.
The present invention can be by designing to realize to silk screen figure to the improvement of crystal-silicon solar cell positive electrode aspect, and which generalization is strong, simple to operate.
The number n ' of the positive electrode alternately being connected to form by narrow positive electrode and wide positive electrode of the present invention meets: n≤n '≤2W/W '.For example, for 8 ' single crystal battery, conventionally 3 continuous positive electrodes of design, positive electrode specification is that 154mm × (1.5 ~ 2.0) mm(is long × wide, as follows), adopting the solution of the present invention is that n ' bar replaces positive electrode, positive electrode length is still 154mm, wherein 8 sections of wide positive electrodes (1 ~ 15) mm × (1.5 ~ 2.0) mm(hypothesis width is by W ' representative), initial narrow electrode and termination narrow electrode (5 ~ 20) mm × (0.15 ~ 0.3) mm, middle 7 pairs of narrow positive electrode width are initial narrow positive electrode 1/2, and positive electrode number n ' satisfies condition: n≤n '≤2W/W ', wherein the width W of the positive electrode of single-width is 1.5 ~ 4.0mm.
The positive electrode that n ' bar of the present invention is alternately formed by connecting by narrow positive electrode and wide positive electrode is the symmetrical distribution of line centered by the central axis of crystal silicon chip.
The present invention is also provided with the thin grid line of many perpendicular settings of positive electrode that are alternately formed by connecting by narrow positive electrode and wide positive electrode with described n ' bar on crystal silicon chip.
The thin grating spacing of many perpendicular settings of positive electrode that are alternately formed by connecting by narrow positive electrode and wide positive electrode with described n ' bar of the present invention is identical, and being positioned near the thin grid line of crystal silicon chip edge is 1 ~ 1.5mm apart from the distance of battery edge.
Thin grid line of the present invention remains perpendicular with the symmetry axis of positive electrode and positive electrode.
The number of thin grid line of the present invention is 60 ~ 150, and the width of thin grid line is 15 ~ 80 μ m.
The present invention is for 6.5 ' crystal silicon chip, and every positive electrode is alternately connected to form by 2 sections of initiating terminals and the narrow positive electrode of clearing end, 5 pairs of narrow positive electrodes and 6 sections of wide positive electrodes; For 8 ' crystal silicon chip, every positive electrode is alternately connected to form by 2 sections of initiating terminals and the narrow positive electrode of clearing end, 7 pairs of narrow positive electrodes and 8 sections of wide positive electrodes.
The width dimensions that the present invention is positioned at the narrow positive electrode of every positive electrode initiating terminal and the narrow positive electrode of clearing end is identical with the width dimensions of narrow positive electrode that is positioned at every positive electrode middle part.
The width dimensions that the present invention is positioned at the narrow positive electrode of every positive electrode initiating terminal and the narrow positive electrode of clearing end is different from the width dimensions of narrow positive electrode that is positioned at every positive electrode middle part.
Every positive electrode symmetry axis is uniformly distributed along the symmetry axis of crystal silicon chip all the time, and no matter positive electrode quantity is odd number or even number.
Crystal silicon chip in the present invention is preferably monocrystal wafer.
Tool of the present invention has the following advantages: adopt technical solution of the present invention, can reduce more than 2% metallization area in crystal silicon chip front, the battery silver reducing more than 2% consumes, simultaneously many main grid designs can reduce the series resistance of crystal silicon cell, the conversion efficiency of the solar components that raising crystal silicon cell is welded; And the method generalization is strong, simple to operate.
Brief description of the drawings
Fig. 1 is the continuous positive electrode design diagram of existing crystal silicon cell;
Fig. 2 is the schematic diagram of 6.5 ' crystal silicon cell of preparation in the embodiment of the present invention 1;
Fig. 3 is the schematic diagram of 8 ' crystal silicon cell of preparation in the embodiment of the present invention 2;
Fig. 4 is the schematic diagram of 8 ' crystal silicon cell of preparation in the embodiment of the present invention 3;
Fig. 5 is the schematic diagram of 8 ' crystal silicon cell of preparation in the embodiment of the present invention 4.
In Fig. 1-5,1, crystal silicon chip, 2, positive electrode, 3, thin grid line.
Embodiment
embodiment 1
For 6.5 ' single crystal battery, the traditional design of conventional crystal silicon cell is the continuous positive electrode of 2 single-widths, positive electrode specification is 124mm × 3.0mm, the present embodiment is changed to 4 and is alternately formed by connecting by the narrow positive electrode of wide positive electrode, as shown in Figure 2, positive electrode length is still 124mm, wherein 6 sections wide positive electrode 9.0mm × 1.2mm, 7 sections of narrow positive electrodes, wherein 2 sections narrow, two ends positive electrode 10.0mm × 0.15mm, middle 5 couples of narrow electrode 10.0mm × 0.075mm, positive electrode number satisfies condition: n≤n '≤2W/ W ', i.e. 2≤4≤[2 × 3.0/1.2]=5.
These 4 positive electrode alternately being connected to form by narrow positive electrode and wide positive electrode symmetrical distributions of line centered by the central axis of crystal silicon chip.On crystal silicon chip, be also provided with many with the thin grid line of 4 perpendicular settings of positive electrode that are alternately formed by connecting by narrow positive electrode and wide positive electrode.The number of thin grid line is 55, and the width of thin grid line is 50 μ m.
Many identical with the thin grating spacing of 4 perpendicular settings of positive electrode that are alternately formed by connecting by narrow positive electrode and wide positive electrode, and being positioned near the thin grid line of crystal silicon chip edge is 1.0mm apart from the distance of battery edge.
Be designed to printed pattern according to above-mentioned parameter, silicon chip is through processes such as surface-texturing, diffusion, deposition antireflection layer, silk screen printing back metals, and it is positive by the half tone silk screen printing front metal pattern of above-mentioned figure, through being sintered to finished product battery, the painting tin copper strips that utilizes 1.0 ~ 1.2mm is by battery strings and connect and be packaged into battery component.
embodiment 2
For 8 ' single crystal battery, the traditional design of conventional crystal silicon cell is the continuous positive electrode of 3 single-widths, positive electrode specification is 154mm × 1.5mm, the present embodiment is changed to 3 alternately positive electrodes, as shown in Figure 3, positive electrode length is still 154mm, wherein 8 sections wide positive electrode 8.0mm × 1.0mm, 9 sections of narrow positive electrodes, wherein 2 sections, two ends very 10.0mm × 0.18mm of narrow positive electricity, the 7 couples of very 10.0mm × 0.09mm of narrow positive electricity in middle part, positive electrode number satisfies condition: n≤n '≤2W/ W ', i.e. 3≤3≤[2 × 1.5/1.0]=3.
Wherein 3 positive electrode alternately being connected to form by narrow positive electrode and wide positive electrode symmetrical distributions of line centered by the central axis of crystal silicon chip.
On crystal silicon chip, be also provided with many with the thin grid line of 3 perpendicular settings of positive electrode that are alternately formed by connecting by narrow positive electrode and wide positive electrode.The number of thin grid line is 80, and the width of thin grid line is 40 μ m.
Many indirectly identical with the thin grid line of 3 perpendicular settings of positive electrode that are alternately formed by connecting by narrow positive electrode and wide positive electrode, and being positioned near the thin grid line of crystal silicon chip edge is 1.0mm apart from the distance of battery edge.
The width dimensions that is positioned at the narrow positive electrode of every positive electrode initiating terminal and the narrow positive electrode of clearing end can be different from the width dimensions of the narrow positive electrode that is positioned at every positive electrode middle part, also can be identical.
Be designed to printed pattern according to above-mentioned parameter, silicon chip is through processes such as surface-texturing, diffusion, deposition antireflection layer, silk screen printing back metals, and it is positive by the half tone silk screen printing front metal pattern of above-mentioned figure, through being sintered to finished product battery, the painting tin copper strips that utilizes 0.8 ~ 1.0mm is by battery strings and connect and be packaged into battery component.
embodiment 3
For 8 ' single crystal battery, the traditional design of conventional crystal silicon cell is the continuous positive electrode of 3 single-widths, positive electrode specification is 154mm × 3.0mm, the present embodiment is changed to 4 alternately positive electrodes, as shown in Figure 4, positive electrode length is still 154mm, wherein 8 sections wide positive electrode 8.0mm × 1.3mm, 9 sections of narrow positive electrodes, wherein 2 sections, two ends very 10.0mm × 0.18mm of narrow positive electricity, the 7 couples of very 10.0mm × 0.09mm of narrow positive electricity in middle part, positive electrode number satisfies condition: n≤n '≤2W/ W ', i.e. 3≤4≤[2 × 3.0/1.3]=4.6.
Wherein 4 positive electrode alternately being connected to form by narrow positive electrode and wide positive electrode symmetrical distributions of line centered by the central axis of crystal silicon chip.
On crystal silicon chip, be also provided with many with the thin grid line of 4 perpendicular settings of positive electrode that are alternately formed by connecting by narrow positive electrode and wide positive electrode.The number of thin grid line is 80, and the width of thin grid line is 40 μ m.
Many indirectly identical with the thin grid line of 4 perpendicular settings of positive electrode that are alternately formed by connecting by narrow positive electrode and wide positive electrode, and being positioned near the thin grid line of crystal silicon chip edge is 1.0mm apart from the distance of battery edge.
The width dimensions that is positioned at the narrow positive electrode of every positive electrode initiating terminal and the narrow positive electrode of clearing end can be different from the width dimensions of the narrow positive electrode that is positioned at every positive electrode middle part, also can be identical.
Be designed to printed pattern according to above-mentioned parameter, silicon chip is through processes such as surface-texturing, diffusion, deposition antireflection layer, silk screen printing back metals, and it is positive by the half tone silk screen printing front metal pattern of above-mentioned figure, through being sintered to finished product battery, the painting tin copper strips that utilizes 1.1 ~ 1.3mm is by battery strings and connect and be packaged into battery component.
embodiment 4
For 8 ' single crystal battery, the traditional design of conventional crystal silicon cell is the continuous positive electrode of 3 single-widths, positive electrode specification is 154mm × 4.0mm, the present embodiment is changed to 6 alternately positive electrodes, as shown in Figure 5, positive electrode length is still 154mm, wherein 8 sections wide positive electrode 6.5mm × 1.2mm, in 9 sections of narrow positive electrodes, 2 sections, two ends very 19.5 mm × 0.15mm of narrow positive electricity, the 7 couples of very 9.0mm × 0.075mm of narrow positive electricity in middle part, positive electrode number satisfies condition: n≤n '≤2W/ W ', i.e. 3≤6≤[2 × 4.0/1.2]=6.67.
Wherein 6 positive electrode alternately being connected to form by narrow positive electrode and wide positive electrode symmetrical distributions of line centered by the central axis of crystal silicon chip.
On crystal silicon chip, be also provided with many with the thin grid line of 6 perpendicular settings of positive electrode that are alternately formed by connecting by narrow positive electrode and wide positive electrode.The number of thin grid line is 90, and the width of thin grid line is 30 μ m.
Many indirectly identical with the thin grid line of 6 perpendicular settings of positive electrode that are alternately formed by connecting by narrow positive electrode and wide positive electrode, and being positioned near the thin grid line of crystal silicon chip edge is 1.0mm apart from the distance of battery edge.
The width dimensions that is positioned at the narrow positive electrode of every positive electrode initiating terminal and the narrow positive electrode of clearing end can be different from the width dimensions of the narrow positive electrode that is positioned at every positive electrode middle part, also can be identical.
Be designed to printed pattern according to above-mentioned parameter, silicon chip is through processes such as surface-texturing, diffusion, deposition antireflection layer, silk screen printing back metals, and it is positive by the half tone silk screen printing front metal pattern of above-mentioned figure, through being sintered to finished product battery, the painting tin copper strips that utilizes 1.0 ~ 1.2mm is by battery strings and connect and be packaged into battery component.
The specific embodiment of more than enumerating is the explanation that the present invention is carried out.It is pointed out that above embodiment, only for the invention will be further described, does not represent protection scope of the present invention, nonessential amendment and adjustment that other people prompting according to the present invention is made, still belong to protection scope of the present invention.
Claims (10)
1. the preparation method of a high-performance crystal silicon cell, it is characterized in that: the positive electrode of conventional crystal silicon cell is changed to the positive electrode that n ' bar is alternately formed by connecting by narrow positive electrode and wide positive electrode by the positive electrode of n bar single-width, every positive electrode all originates in narrow positive electrode and ends at narrow positive electrode, wherein the width of initiating terminal and the narrow positive electrode of clearing end is 0.08 ~ 0.3mm, the width of middle narrow positive electrode is 1/2 of initiating terminal or the narrow positive electrode of clearing end, the width W of wide positive electrode ' be 0.5 ~ 2.0mm, the width W of the positive electrode of the single-width of conventional crystal silicon cell is 1.5 ~ 4.0mm, described n≤n '≤2W/ W '.
2. the preparation method of high-performance crystal silicon cell according to claim 1, is characterized in that: the positive electrode that described n ' bar is alternately connected to form by narrow positive electrode and wide positive electrode is the symmetrical distribution of line centered by the central axis of crystal silicon chip.
3. the preparation method of high-performance crystal silicon cell according to claim 2, is characterized in that: the thin grid line that is also provided with many perpendicular settings of positive electrode that are alternately formed by connecting by narrow positive electrode and wide positive electrode with described n ' bar on crystal silicon chip.
4. the preparation method of high-performance crystal silicon cell according to claim 3, it is characterized in that: the thin grating spacing of described many perpendicular settings of positive electrode that are alternately formed by connecting by narrow positive electrode and wide positive electrode with described n ' bar is identical, being positioned near the thin grid line of crystal silicon chip edge is 1 ~ 1.5mm apart from the distance of battery edge.
5. the preparation method of high-performance crystal silicon cell according to claim 4, is characterized in that: the number of described thin grid line is 60 ~ 150, and the width of thin grid line is 15 ~ 80 μ m.
6. according to the preparation method of the high-performance crystal silicon cell described in claim 1-5 any one, it is characterized in that: for 6.5 ' crystal silicon chip, every positive electrode is alternately connected to form by 7 sections of narrow positive electrodes and 6 sections of wide positive electrodes.
7. according to the preparation method of the high-performance crystal silicon cell described in claim 1-5 any one, it is characterized in that: for 8 ' crystal silicon chip, every positive electrode is alternately connected to form by 9 sections of narrow positive electrodes and 8 sections of wide positive electrodes.
8. according to the preparation method of the high-performance crystal silicon cell described in claim 6 or 7, it is characterized in that: the width dimensions that is positioned at the narrow positive electrode of every positive electrode initiating terminal and the narrow positive electrode of clearing end is different from the width dimensions of narrow positive electrode that is positioned at every positive electrode middle part.
9. according to the preparation method of the high-performance crystal silicon cell described in claim 6 or 7, it is characterized in that: the width dimensions that is positioned at the narrow positive electrode of every positive electrode initiating terminal and the narrow positive electrode of clearing end is identical with the width dimensions of narrow positive electrode that is positioned at every positive electrode middle part.
10. according to the preparation method of the high-performance crystal silicon cell described in claim 6 or 7, it is characterized in that: every positive electrode symmetry axis is uniformly distributed along the symmetry axis of crystal silicon chip all the time, no matter positive electrode quantity is odd number or even number.
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| EP2218107A1 (en) * | 2007-12-11 | 2010-08-18 | Institut für Solarenergieforschung GmbH | Rear-contact solar cell having elongate, nested emitter and base regions on the rear side and method for producing the same |
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| CN102779861A (en) * | 2012-07-31 | 2012-11-14 | 宁波尤利卡太阳能科技发展有限公司 | Electrode structure with grid lines on front surface |
| CN103208538A (en) * | 2013-03-20 | 2013-07-17 | 晶澳太阳能有限公司 | Manufacturing method of high-performance solar cell |
| CN103317835A (en) * | 2013-06-19 | 2013-09-25 | 东莞南玻光伏科技有限公司 | Electrode screen on positive side of crystalline silicon cell |
-
2014
- 2014-04-10 CN CN201410141989.8A patent/CN103985772A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2218107A1 (en) * | 2007-12-11 | 2010-08-18 | Institut für Solarenergieforschung GmbH | Rear-contact solar cell having elongate, nested emitter and base regions on the rear side and method for producing the same |
| KR101141052B1 (en) * | 2008-09-12 | 2012-05-03 | 주식회사 엘지화학 | Front Electrode for Solar Cell Having Minimized Power Loss and Solar Cell Containing the Same |
| CN102738257A (en) * | 2012-06-15 | 2012-10-17 | 晶澳（扬州）太阳能科技有限公司 | Low-cost efficient solar cell electrode grid line structure |
| CN102779861A (en) * | 2012-07-31 | 2012-11-14 | 宁波尤利卡太阳能科技发展有限公司 | Electrode structure with grid lines on front surface |
| CN103208538A (en) * | 2013-03-20 | 2013-07-17 | 晶澳太阳能有限公司 | Manufacturing method of high-performance solar cell |
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