CN103965794A - Sheet For Optical Semiconductor, And Optical Semiconductor Device - Google Patents

Sheet For Optical Semiconductor, And Optical Semiconductor Device Download PDF

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Publication number
CN103965794A
CN103965794A CN201410042958.7A CN201410042958A CN103965794A CN 103965794 A CN103965794 A CN 103965794A CN 201410042958 A CN201410042958 A CN 201410042958A CN 103965794 A CN103965794 A CN 103965794A
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China
Prior art keywords
sheet
bonding coat
photosemiconductor
silicone resin
optical semiconductor
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CN201410042958.7A
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Chinese (zh)
Inventor
小名春华
松田广和
片山博之
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Nitto Denko Corp
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Nitto Denko Corp
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Publication of CN103965794A publication Critical patent/CN103965794A/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/748—Releasability
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2551/00—Optical elements
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/045—Polysiloxanes containing less than 25 silicon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2483/00—Presence of polysiloxane
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2483/00—Presence of polysiloxane
    • C09J2483/006—Presence of polysiloxane in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

This sheet for optical semiconductor is provided with: an adhesive layer formed of a first silicone resin; and a non-adhesive layer, which is provided on one surface in the thickness direction of the adhesive layer, and which is formed of a second silicone resin.

Description

Sheet photoreactive semiconductor device for photosemiconductor
Technical field
The present invention relates to photosemiconductor sheet photoreactive semiconductor device, specifically, relate to the optical semiconductor device of the optical semiconductor that possesses photosemiconductor sheet and encapsulate by this photosemiconductor sheet.
Background technology
Elastomeric silicone resin sheet is because the excellence such as weather resistance, thermotolerance is used to various uses.
This silicone resin sheet is because surface has binding property, and therefore in the time of transport, silicone resin sector-meeting is adhered to other members and around polluting, or needs stacked stripping film separately to protect surface.In addition, in the time that surperficial binding property is too high, also exist the release sheet situation that release property reduces when the silicone resin sheet demoulding.
Therefore, proposed for example to scatter the scale like powders such as talcum, mica on surface and the silicone rubber plate for thermo-compressed that obtains (for example, referring to following patent documentation 1.）。
The thermo-compressed of patent documentation 1 is passed through scattered powder with silicone rubber plate and is reduced surperficial binding property, reduces pollution around, and then improves release property.
prior art document
patent documentation
Patent documentation 1: Japanese kokai publication hei 10-219199 communique
Summary of the invention
the problem that invention will solve
But the thermo-compressed that patent documentation 1 is recorded because scattered powder causes the transparency insufficient, therefore exists the luminous efficiency of the optical semiconductor device that so encapsulates optical semiconductor and obtain to reduce this rough sledding with silicon rubber sector-meeting.
The object of the present invention is to provide and reduce pollution around, improve non-binding property and the excellent photosemiconductor sheet of the transparency and suppressed the optical semiconductor device of the reduction of luminous efficiency.
for the scheme of dealing with problems
Photosemiconductor of the present invention is characterised in that to possess the bonding coat being formed by the 1st silicone resin with sheet, and is arranged at the thickness direction one side of aforementioned adhesion layer, the non-bonding coat being formed by the 2nd silicone resin.
This photosemiconductor, therefore can reduce, because bonding coat is attached to the pollution that member around causes, to improve non-binding property because the thickness direction one side at bonding coat arranges non-bonding coat with sheet, improves the transparency simultaneously.
In addition, photosemiconductor of the present invention with sheet preferably, aforementioned the 2nd silicone resin is solid-state and for thermoplasticity at normal temperatures.
At this photosemiconductor with in sheet, because the 2nd silicone resin is thermoplasticity, therefore can by heating make non-bonding coat and bonding coat closely sealed.Therefore, can prevent from producing gap between non-bonding coat and bonding coat.As a result, can further improve the transparency of photosemiconductor sheet.
In addition, at photosemiconductor of the present invention, with in sheet, preferably, aforementioned the 1st silicone resin is the Thermocurable silicone resin on B rank.
According to this photosemiconductor sheet, because the 1st silicone resin is the Thermocurable silicone resin on B rank, therefore can be easily and coating object positively.After coating object, by photosemiconductor is to C rank, positively encapsulated object thing with sheet heating.
In addition, at photosemiconductor of the present invention, with in sheet, preferably, aforementioned the 2nd silicone resin is silsesquioxane.
According to this photosemiconductor sheet, because the 2nd silicone resin is silsesquioxane, therefore, in weather resistance and transparency excellence, can easily ensure thermoplasticity.
In addition, at photosemiconductor of the present invention, with in sheet, preferably, aforementioned silsesquioxane contains the functional group of reacting with aforementioned the 1st silicone resin.
With in sheet, because silsesquioxane contains the functional group of reacting with the 1st silicone resin, therefore, by the 2nd silicone resin is reacted with the 1st silicone resin, can further improve the adaptation of bonding coat and non-bonding coat at this photosemiconductor.
In addition, photosemiconductor of the present invention is preferred for the encapsulation of optical semiconductor with sheet.
The encapsulation for optical semiconductor with sheet due to this photosemiconductor therefore can suppress the reduction of luminous efficiency in the reliability that improves optical semiconductor.
In addition, at photosemiconductor of the present invention, with in sheet, preferably, aforementioned non-bonding coat is formed by the sheet being formed by aforementioned the 2nd silicone resin.
According to this photosemiconductor sheet, because non-bonding coat is formed by the sheet being formed by the 2nd silicone resin, it is hereby ensured the even thickness of non-bonding coat, in addition, long-term keeping quality excellence.
In addition, at photosemiconductor of the present invention, with in sheet, preferably, aforementioned non-bonding coat becomes stratiform by the granulated being formed by aforementioned the 2nd silicone resin.
According to this photosemiconductor sheet, because non-bonding coat becomes stratiform by granulated, therefore can make technique simple.
In addition, optical semiconductor device of the present invention is characterised in that, the optical semiconductor that it possesses photosemiconductor sheet and encapsulates by aforementioned photosemiconductor sheet, aforementioned photosemiconductor possesses the bonding coat being formed by the 1st silicone resin with sheet, and is arranged at the thickness direction one side of aforementioned adhesion layer, the non-bonding coat being formed by the 2nd silicone resin.
This optical semiconductor device, owing to possessing the optical semiconductor of the photosemiconductor sheet encapsulation excellent by the transparency, therefore can suppress the reduction of luminous efficiency.
the effect of invention
Photosemiconductor of the present invention can reduce to be attached to member around and the pollution that causes by bonding coat with sheet, improves non-binding property, improves the transparency simultaneously.
Optical semiconductor device of the present invention can suppress the reduction of luminous efficiency.
Brief description of the drawings
Fig. 1 is the process picture sheet of the manufacture method of the 1st embodiment of explanation photosemiconductor of the present invention sheet,
Fig. 1 (a) illustrates the operation of preparing respectively bonding coat and non-bonding coat,
Fig. 1 (b) illustrates the operation of bonding coat and the laminating of non-bonding coat.
Fig. 2 is that explanation is used the sheet of the photosemiconductor shown in Fig. 1 (b) to manufacture the process picture sheet of the method for optical semiconductor device as case chip,
Fig. 2 (a) illustrates the operation of the photosemiconductor of having peeled off the 2nd release sheet being used to sheet configuration relative to substrate,
Fig. 2 (b) illustrates by the operation of photosemiconductor sheet encapsulation optical semiconductor.
Fig. 3 is that explanation is used the 1st embodiment of photosemiconductor of the present invention sheet to manufacture the process picture sheet of the variation of the method for optical semiconductor device as case chip,
Fig. 3 (a) illustrates the operation of the photosemiconductor of having peeled off the 1st release sheet being used to sheet configuration relative to substrate,
Fig. 3 (b) illustrates by the operation of photosemiconductor sheet encapsulation optical semiconductor.
Fig. 4 illustrates the sectional view of the 2nd embodiment of photosemiconductor of the present invention sheet.
Fig. 5 is that explanation is used the photosemiconductor sheet of Fig. 4 to manufacture the process picture sheet of the method for optical semiconductor device as case chip,
Fig. 5 (a) illustrates the operation of the photosemiconductor of having peeled off the 2nd release sheet being used to sheet configuration relative to substrate,
Fig. 5 (b) illustrates by the operation of photosemiconductor sheet encapsulation optical semiconductor.
Fig. 6 is that explanation is used the 2nd embodiment of photosemiconductor of the present invention sheet to manufacture the process picture sheet of the variation of the method for optical semiconductor device as case chip,
Fig. 6 (a) illustrates the operation of the photosemiconductor of having peeled off the 1st release sheet being used to sheet configuration relative to substrate,
Fig. 6 (b) illustrates by the operation of photosemiconductor sheet encapsulation optical semiconductor.
description of reference numerals
1 photosemiconductor sheet
2 bonding coats
3 non-bonding coats
6 optical semiconductor devices
8 optical semiconductors
Embodiment
the 1st embodiment
In Fig. 1, taking paper above-below direction as above-below direction (thickness direction, the 1st direction), taking paper left and right directions as left and right directions (the 2nd direction, with the orthogonal direction of the 1st direction), taking paper thickness direction as fore-and-aft direction (the 3rd direction, with the 1st direction and the orthogonal direction of the 2nd direction).Fig. 2 and subsequent each figure are as the criterion with above-mentioned direction.
In Fig. 1 (b), photosemiconductor possesses bonding coat 2 with sheet 1 and is arranged at the non-bonding coat 3 of the upper surface of bonding coat 2 (thickness direction one side).In addition, be arranged with the 1st release sheet 4 at bonding coat 2.In addition, on non-bonding coat 3, be provided with the 2nd release sheet 5.
Bonding coat 2 is layered in the upper surface of the 1st release sheet 4, is formed as the sheet of extending along face direction (with orthogonal this both direction of direction, i.e. left and right directions and fore-and-aft direction of thickness direction) by the 1st silicone resin.
As the 1st silicone resin, for example, can list: thermoplastic silicone resin, Thermocurable silicone resin etc.Can preferably list Thermocurable silicone resin.
As Thermocurable silicone resin, for example, can list: two stage solidification type silicone resins, one-phase curing type silicone resin etc.
Two stage solidification type silicone resins are to have two stage reaction mechanism, in the reaction of first stage B rank (semicure), and the Thermocurable silicone resin of C rank in the reaction of subordinate phase (completely curing).On the other hand, one-phase curing type silicone resin is the reaction mechanism with one-phase, completely crued Thermocurable silicone resin in the reaction of first stage.
In addition, B rank are Thermocurable silicone resin states between liquid A rank and completely crued C rank, are to solidify and gelation is only carried out a little, the little state of Young's modulus on modular ratio C rank.
As Thermocurable silicone resin, can preferably list two stage solidification type silicone resins.
In addition, also can prepare the 1st silicone resin (being specially Thermocurable silicone resin) by the organosilicon resin composition that contains Multiple components (being specially Thermocurable organosilicon resin composition).
As the uncured bulk of two stage solidification type organosilicon resin compositions (first stage solidify before), for example, can enumerate condensation reaction addition reaction curing type silicone resin combination.
Condensation reaction addition reaction curing type silicone resin combination is the Thermocurable organosilicon resin composition that can carry out by heating condensation reaction and addition reaction, more specifically, be to carry out the Thermocurable organosilicon resin composition that condensation reaction reaches B rank (semicure), then can be carried out addition reaction (concrete example as for hydrosilylation reactions) and reached by further heating C rank (completely curing) by heating.
This condensation reaction addition reaction curing type silicone resin combination preferably remains functional group can addition or can condensation, more preferably remain can addition functional group.
As functional group that can addition reaction, can list: the thiazolinyl of the carbon numbers 2～10 such as such as vinyl, allyl group, propenyl, butenyl, pentenyl, hexenyl, heptenyl, octenyl, the such as cycloalkenyl group of the carbon number such as cyclohexenyl, norbornene 3～10 etc.The thiazolinyl that can preferably list carbon number 2～5, more preferably lists vinyl.And then, as functional group that can addition reaction, also can enumerate for example silicon hydrogen base (SiH).
Functional group that can addition reaction can be used singly or in combination.
As functional group that can addition reaction, can preferably list the combination of alkenyl and silicon hydrogen base.
On the other hand, as functional group that can condensation reaction, for example, can list: silicon hydrogen base, silanol group (Si-OH), halogen atom (specifically having bromine atoms, chlorine atom, fluorine atom, iodine atom etc.), alkoxyl group (specifically having methoxyl group, oxyethyl group, propoxy-, isopropoxy, butoxy, isobutoxy, pentyloxy, hexyloxy etc.), phenoxy group or acetoxyl group etc.
As functional group that can condensation reaction, can preferably list silicon hydrogen base, silanol group.
In addition, silicon hydrogen base can double as can addition reaction functional group and functional group that can condensation reaction.
Functional group that can condensation reaction can be used singly or in combination.
As functional group that can condensation reaction, can preferably list the combination of silicon hydrogen base and silanol group.
As this condensation reaction addition reaction curing type silicone resin combination, for example, can enumerate the middle composition for silicone resins of recording such as TOHKEMY 2012-82320 communique etc.
Bonding coat 2 is preferably formed by the Thermocurable silicone resin (composition) on B rank.
The Young's modulus of bonding coat 2 at 25 DEG C is for example more than 0.01MPa, more than being preferably 0.025MPa, and is for example, below 1.0MPa, to be preferably below 0.5MPa.The Young's modulus of bonding coat 2 uses nano impress instrumentation fixed.The Young's modulus of non-bonding coat 3 described later is also measured by same method.
If the Young's modulus of bonding coat 2 is more than above-mentioned lower limit, can guarantee the shape-holding property of bonding coat 2, improve the operability of bonding coat 2.If the Young's modulus of bonding coat 2 is below the above-mentioned upper limit, encapsulation optical semiconductor 8(described later referring to Fig. 2) time, positively coating optical semiconductor 8.
In addition, for the transmittance of bonding coat 2, in the time that thickness is 600 μ m, with respect to the light of wavelength 500nm, for example, be more than 80%, to be preferably more than 85%, more preferably more than 90%, more preferably more than 95%, and, be below 99.99%.The transmittance of bonding coat 2 is according to JIS K7361-1(1997 version) the record of " test method of the total light transmittance of plastics-transparent material ", by the spectrophotometric determination of integrating sphere is housed.Transmittance for non-bonding coat 3 described later is also measured by same method.
In addition, bonding coat 2 has viscosity (binding property) when normal temperature (being specially 25 DEG C, lower same).For example, bonding coat 2 with respect to polypropylene (PP) sheet (without stretch.The thickness 50 μ peel adhesion of 25 DEG C m) is for example more than 0.3N/2cm, more than being preferably 1N/2cm, and is for example, below 8N/2cm, to be preferably below 5N/2cm.
Wherein, the peel adhesion of bonding coat 2 can describe in detail in the embodiment below.Also measure by same method by the peel adhesion of sheet 1 for non-bonding coat 3 photoreactive semiconductors described later.
The thickness of bonding coat 2 is for example more than 50 μ m, more than being preferably 100 μ m, and is for example below 2000 μ m, is preferably below 1500 μ m.
Non-bonding coat 3 forms by the sheet being formed by the 2nd silicone resin.
As the 2nd silicone resin, for example, can list: silsesquioxane, organic silicon granule etc.Can preferably list silsesquioxane.
The structure of " Si-O-Si " skeleton to silsesquioxane is not particularly limited, for example, can list: cage type, trapezoidal, random shape etc.
As silsesquioxane, for example, can list: poly methyl silsesquioxane, polyphenylmethyl base silsesquioxane, polyphenylsilsesquioxane etc.Can preferably list poly methyl silsesquioxane.
In addition, silsesquioxane also can contain and the functional group of the functional group reactions of the 1st silicone resin at molecule.Particularly, silsesquioxane can contain and the functional group of the functional group reactions can addition or can condensation of the 1st silicone resin at molecule.
As the functional group of containing in silsesquioxane, for example, can list: vinyl, hydroxyl etc.Can preferably list vinyl.
The 2nd silicone resin can use commercially available product, particularly, as poly methyl silsesquioxane, can enumerate chemical company of KR-220L(SHIN-ETSU HANTOTAI manufactures) etc., in addition, as containing vinyl poly methyl silsesquioxane, can list: production code member 52365-8(Aldrich manufactures), OL1123(Hybrid Plastics, Inc. manufactures) etc.
The 2nd silicone resin is solid-state at normal temperatures and is thermoplastic.
Particularly, the softening temperature of the 2nd silicone resin is for example more than 60 DEG C, to be preferably more than 70 DEG C, and is for example, below 200 DEG C, to be preferably below 150 DEG C.
If softening temperature is below the above-mentioned upper limit,, in the time of thermo-compressed described later, can positively make non-bonding coat 3 softening.And then, can easily make the softening melting of non-bonding coat 3, during in substrate 7, can prevent the damage of lead-in wire at optical semiconductor 8 Bondings described later.On the other hand, if softening temperature is more than above-mentioned lower limit, can improve the operability under normal temperature.
The softening temperature of the 2nd silicone resin is measured as follows: the 2nd silicone resin of about 1g is placed on hot-plate, by making the 2nd silicone resin softening hot-plate heating with 5 DEG C/min of intensification temperature, with this process of visual observation, measures thus.
In addition, non-bonding coat 3 is inviscid (not having binding property) at normal temperatures.
The Young's modulus of non-bonding coat 3 at 25 DEG C is for example more than 0.5MPa, more than being preferably 1MPa, and is for example, below 15MPa, to be preferably below 10MPa.
For the transmittance of non-bonding coat 3, in the situation that thickness is 10 μ m, with respect to the light of wavelength 500nm, for example, be more than 80%, to be preferably more than 85%, more preferably more than 90%, more preferably more than 95%, and be below 99.99%.
The thickness of non-bonding coat 3 is for example more than 0.1 μ m, more than being preferably 1 μ m, and is for example below 100 μ m, is preferably below 50 μ m.
As the 1st release sheet 4, can list: the polymer sheets such as such as polyolefin piece (polythene strip, PP sheet etc.), polyester chips (PET sheet etc.), for example ceramic plate, such as tinsel etc.Can preferably list polymer sheet.In addition, also can implement to the surface of the 1st release sheet 4 (lower surface) lift-off processing such as fluorine processing.
The 2nd release sheet 5 is formed by the material same with the 1st release sheet 4.In addition, also can implement the lift-off processing same with the 1st release sheet 4 to the 2nd release sheet 5.
Then, this photosemiconductor is described by the manufacture method of sheet 1.
In the method, first, as shown in the downside figure of Fig. 1 (a), bonding coat 2 is layered on the 1st release sheet 4.
Particularly, the varnish being formed is coated on to the upper surface of the 1st release sheet 4 by the 1st silicone resin, then, heating film forms bonding coat 2 thus on the 1st release sheet 4.In addition, in the time that the 1st silicone resin contains condensation reaction addition reaction curing type silicone resin combination, by heating film, condensation reaction is carried out.Thus, bonding coat 2 is formed by the Thermocurable silicone resin on B rank.
In addition, prepare separately non-bonding coat 3.
Particularly, as shown in the upside figure of Fig. 1 (a), non-bonding coat 3 is layered on the 2nd release sheet 5 and (wherein,, in Fig. 1 (a), for the relative position of clear and definite and bonding coat 2, is formed on for convenience its D score).
Want non-bonding coat 3 to be formed on the 2nd release sheet 5, referring to the upside figure of Fig. 1 (a), first, the 2nd silicone resin is dissolved in to solvent and prepares solution, then, solution coat is formed to film at the upper surface of the 2nd release sheet 5.
As solvent, can list: the such as varsol such as hexane, heptane, the such as ketones solvent such as acetone, methylethylketone.
Solids component (the 2nd silicone resin) concentration in solution is for example more than 10 quality %, more than being preferably 25 quality %, and is for example below 90 quality %, is preferably below 75 quality %.
Then, by adding the solvent in heat abstraction film.
Be for example more than 0.1 minute, to be preferably more than 0.5 minute heat-up time, and be for example, below 100 minutes, to be preferably below 50 minutes.In addition, Heating temperature is for example more than 50 DEG C, to be preferably more than 75 DEG C, and is for example, below 150 DEG C, to be preferably below 120 DEG C.
Thus, form non-bonding coat 3 at the upper surface of the 2nd release sheet 5.
Then,, as shown in Fig. 1 (b), bonding coat 2 and non-bonding coat 3 are fitted.
Particularly, the bonding coat 2 being layered on the 1st release sheet 4 is spun upside down the non-bonding coat 3 of the upper surface that is layered in the 2nd release sheet 5 with the non-bonding coat 3(being layered on the 2nd release sheet 5) attach.
In the attaching of bonding coat 2 and non-bonding coat 3 by they crimping.Pressure when crimping is for example more than 0.001MPa, and is for example, below 300MPa, to be preferably below 50MPa.
On the other hand, in the attaching of bonding coat 2 and non-bonding coat 3, according to the binding property of bonding coat 2, also stacked on bonding coat 2 (being specially mounting) non-bonding coat 3 only.
Thus, obtain at thickness direction sheet 1 for photosemiconductor that clamp by the 1st release sheet 4 and the 2nd release sheet 5, that formed by bonding coat 2 and non-bonding coat 3.There is the 2nd release sheet 5 the upper surface of non-bonding coat 3 is stacked, in addition, have the 1st release sheet 4 the lower surface of bonding coat 2 is stacked.
Just manufacture the upper surface of the photosemiconductor sheet 1 of (be specially from making 30 minutes with interior, lower with), non-bonding coat 3 one sides face with respect to polypropylene (PP) sheet (without stretching.The thickness 50 μ peel adhesion of 25 DEG C m) is for example, below 0.40N/2cm, to be preferably below 0.20N/2cm, more preferably below 0.10N/2cm, more preferably below 0.05N/2cm, and is for example more than 0.001N/2cm.
The photosemiconductor sheet 1 of the photosemiconductor sheet 1(just having manufactured except the 1st release sheet 4 and the 2nd release sheet 5) be for example more than 80.0% with respect to the transmittance of the light of wavelength 500nm, be preferably more than 90.0%, more preferably more than 92.5%, more preferably more than 95.0%, and be less than 100%.
Then, the photosemiconductor of Fig. 1 (b) good to firm manufacture operates with sheet 1, that is, specifically preserve for a long time and/or transport (circulation).That is, from photosemiconductor shown in Fig. 1 (b) with the manufacture of sheet 1 afterwards to transport and then to before by use, be arranged at sheet 1 for photosemiconductor to major general's the 2nd release sheet 5.In other words,, before being about to use the photosemiconductor sheet 1 of Fig. 1 (b), as shown in the long and short dash line of Fig. 1 (b), the 2nd release sheet 5 is peeled off from non-bonding coat 3.
Then, with reference to Fig. 2, to describing by the method that this photosemiconductor sheet 1 encapsulates to manufacture optical semiconductor device 6 as case chip to optical semiconductor 8.
In the method, first, as shown in the long and short dash line of Fig. 1 (b), the 2nd release sheet 5 is peeled off from non-bonding coat 3.
Then, as shown in Figure 2 (a) shows, photosemiconductor sheet 1 configuration relative to substrate 7 of the 2nd release sheet 5 will have been peeled off.
Particularly, by the photosemiconductor sheet 1(after the photosemiconductor sheet 1 of having peeled off the 2nd release sheet 5 as shown in the long and short dash line of Fig. 1 (b) is spun upside down referring to Fig. 2 (a)) non-bonding coat 3 relative with the optical semiconductor 8 of upper surface that is installed on substrate 7.
Substrate 7 is substantially planar, particularly, and by being formed as the stacked plywood that has the conductor layer (not shown) that comprises electrode pad (not shown) and wiring (not shown) of circuit pattern on insulated substrate.Insulated substrate is for example formed by silicon substrate, ceramic substrate, polyimide resin substrate etc., is preferably ceramic substrate, is specifically formed by sapphire substrate.
Conductor layer is formed by conductors such as for example gold, copper, silver, nickel.In addition, from the angle of electroconductibility, electrode pad is preferably formed by silver, copper.The thickness of substrate 7 is for example more than 30 μ m, more than being preferably 50 μ m, and is for example below 1500 μ m, is preferably below 1000 μ m.
Optical semiconductor 8 is arranged on light-emitting diode or the laser diode of the upper surface of substrate 7.Optical semiconductor 8 carries out flip-chip with respect to the electrode pad of substrate 7 connection or Bonding connection is installed, and is electrically connected thus with conductor layer.Optical semiconductor 8 is the elements (being specially blue led) that for example send blue light.The thickness of optical semiconductor 8 is for example more than 0.05mm and below 1mm.
Then,, as shown in Fig. 2 (b), use sheet 1 to bury (coating) optical semiconductor 8 underground by photosemiconductor.
Particularly, to substrate 7 sheet 1 for thermo-compressed photosemiconductor.
Preferably photosemiconductor is carried out to flat board compacting with sheet 1 and substrate 7.
As pressing conditions, temperature is more than the plasticization temperature of non-bonding coat 3, particularly, being equal to or higher than the softening temperature of the 2nd silicone resin of non-bonding coat 3, specifically, for example, is more than 80 DEG C, be preferably more than 100 DEG C, and be for example, below 220 DEG C, to be preferably below 200 DEG C.In addition, pressure is for example more than 0.01MPa, and is for example, below 1MPa, to be preferably below 0.5MPa.Press time is for example 1～10 minute.
By this thermo-compressed, as shown in Fig. 2 (b), there is softening melting and mutually fuse with bonding coat 2 in non-bonding coat 3, more specifically, forms the encapsulated layer 9 of fully integratedization.So optical semiconductor 8 is embedded in encapsulated layer 9., the packed layer in the upper surface of optical semiconductor 8 and side 9 coating.
The packed layer of upper surface 9 coating of the substrate 7 exposing from optical semiconductor 8 in addition.
Thus, by sheet 1(encapsulated layer 9 for photosemiconductor) adhere to optical semiconductor 8 and substrate 7.
Then,, by this thermo-compressed, when the Thermocurable silicone resin that contains B rank at bonding coat 2, bonding coat 2 reaches C scalariform state (completely curing).
More specifically, in the situation that bonding coat 2 is condensation reaction addition reaction curing type silicone resin combination, residual functional group's (being specially hydroxyl) that can addition reaction is when residual, in bonding coat 2, carry out addition reaction, and in the time that non-bonding coat 3 contains above-mentioned functional group (being specially vinyl), the functional group of the functional group of bonding coat 2 and non-bonding coat 3 carries out addition reaction (being specially addition reaction of silicon with hydrogen).
Encapsulated layer 9 is inviscid at normal temperatures.The Young's modulus of encapsulated layer 9 at 25 DEG C is for example more than 0.001MPa, and is for example, below 0.3MPa, to be preferably below 0.1MPa.
In addition, Young's modulus as encapsulated layer 9 at 25 DEG C, can be with reference to the evaluation of embodiment described later, evaluate with the Young's modulus that photosemiconductor is heated at 150 DEG C to the encapsulated layer 9 after 3 hours with sheet 1, Young's modulus is now for example more than 0.5MPa, more than being preferably 1MPa, and be for example, below 15MPa, to be preferably below 10MPa.
In addition,, when the thickness of encapsulated layer 9 is 600 μ m, is for example more than 80%, to be preferably more than 85% with respect to the transmittance of the light of wavelength 500nm, and is for example, below 99.9%, to be preferably below 99%.
Thus, obtain using sheet 1 to encapsulate the optical semiconductor device 6 of optical semiconductor 8 by photosemiconductor.
Then, as required, as shown in the long and short dash line of Fig. 2 (b), the 1st release sheet 4 is peeled off from non-bonding coat 3.
So,,, therefore can reduce, because bonding coat 2 is attached to the pollution that member around causes, to improve non-binding property owing to non-bonding coat 3 being set at the upper surface of bonding coat 2 as shown in Fig. 1 (b) with in sheet 1 at this photosemiconductor.Particularly, can improve with respect to the non-binding property of the 2nd release sheet 5, with respect to the non-binding property of the 1st release sheet 4 (the non-binding property when the wind up roll pull-out photosemiconductor sheet 1).
In addition, with in sheet 1, by the 2nd release sheet 5, can also prevent that the foreign matters such as dust are attached to bonding coat 2 at the photosemiconductor shown in Fig. 1 (b), and then, the impact of external impact when protection photosemiconductor is not transported with sheet 1.
In addition, can reduce or cancel space that the transport point of photosemiconductor sheet 1 needs, be specially so far for preventing from being attached to the space of other members, preserve efficiently or transport a large amount of sheets 1 for photosemiconductor.
In addition can improve, the transparency of photosemiconductor sheet 1.
In addition, at this photosemiconductor, with in sheet 1, because the 2nd silicone resin is thermoplasticity, the heating while therefore compacting in the encapsulation by optical semiconductor 8, can make non-bonding coat 3 closely sealed with bonding coat 2.Therefore, can prevent from producing gap between non-bonding coat 3 and bonding coat 2.As a result, can further improve the transparency of photosemiconductor sheet 1.
In addition,,, can easily and positively bury (coating) object underground, be specially optical semiconductor 8 if the 1st silicone resin is the Thermocurable silicone resin on B rank with in sheet 1 at this photosemiconductor.Then,, after coating object, specifically, after encapsulation optical semiconductor 8, heating photosemiconductor becomes C rank with sheet 1, can positively encapsulate thus optical semiconductor 8.
In addition, with in sheet 1, if the 2nd silicone resin of non-bonding coat 3 is silsesquioxane, can in weather resistance and transparency excellence, easily ensure above-mentioned thermoplasticity at this photosemiconductor.
With in sheet 1, if silsesquioxane contains the functional group of reacting with the 1st silicone resin, by the 2nd silicone resin is reacted with the 1st silicone resin, can further improve the adaptation of bonding coat 2 and non-bonding coat 3 at this photosemiconductor.
In addition, the encapsulation for optical semiconductor 8 with sheet 1 due to this photosemiconductor therefore can suppress the reduction of luminous efficiency in the reliability that improves optical semiconductor 8.
In addition, according to this sheet 1 for photosemiconductor, because non-bonding coat 3 forms by the sheet being formed by the 2nd silicone resin, it is hereby ensured the even thickness of non-bonding coat 3, and, long-term keeping quality excellence.
In addition, this optical semiconductor device 6, owing to possessing the optical semiconductor 8 encapsulating by the excellent photosemiconductor sheet 1 of the transparency, therefore can suppress the reduction of luminous efficiency.
variation
The 1st embodiment, as shown in the solid line of Fig. 1 (b), operates (specifically preserve for a long time and/or transport) to the photosemiconductor sheet 1 that is laminated with the 2nd release sheet 5 on non-bonding coat 3.That is, the photosemiconductor shown in the solid line of Fig. 1 (b) arrive transport with the manufacture of sheet 1 and then afterwards to before being about to use freely, is arranged at sheet 1 for photosemiconductor to major general's the 2nd release sheet 5.
But, also can, as shown in the long and short dash line of (b) of Fig. 1, first, peel off the 2nd release sheet 5 from the non-bonding coat 3 of the photosemiconductor sheet 1 of just having manufactured, then, directly the photosemiconductor sheet 1 of having peeled off the 2nd release sheet 5 is operated.
In addition, the sheet 1 for photosemiconductor of can reeling, specifically referring to Fig. 1 (b), make non-bonding coat 3 be present in bonding coat 2 and to be layered in the 1st release sheet 4(on this bonding coat 2 not shown) between, be retracted to web-like (not shown in Fig. 1 (b)), can successfully pull out sheet 1 for photosemiconductor from this volume.
This sheet 1 for photosemiconductor,, because the 2nd release sheet 5 is peeled off in advance, has therefore realized slimming if, can efficiently photosemiconductor be retracted to web-like with sheet 1.
In addition, in the 1st embodiment, in encapsulation, when optical semiconductor 8, bonding coat 2 and non-bonding coat 3 fuse mutually, and for example also can be as shown in the dotted line of Fig. 2 (b), mutually do not fuse and make a distinction.Now, non-bonding coat 3 is formed on the upper surface of optical semiconductor 8 and side and the upper surface of the substrate 7 that exposes from optical semiconductor 8 continuously.
And then, in the 1st embodiment, as shown in Figure 2, use sheet 1 that the optical semiconductor 8 that is installed in advance substrate 7 is buried underground and encapsulated by photosemiconductor, though and not shownly for example also can will not be installed on substrate 7 and be attached at sheet 1 for photosemiconductor by the optical semiconductor 8 of the supports such as such as brace table (not shown).
In the 1st embodiment, as shown in Figure 2 (a) shows, make non-bonding coat 3 relative with optical semiconductor 8, and for example also can be as shown in Fig. 3 (a), make bonding coat 2 relative with optical semiconductor 8.
Now, first, do not make the photosemiconductor sheet 1 of Fig. 1 (b) spin upside down, as shown in the long and short dash line and dash-dot arrows of Fig. 3 (a), this photosemiconductor is peeled off the 1st release sheet 4 with the bonding coat 2 of sheet 1 certainly.Thus, expose the lower surface of bonding coat 2.
Then, make bonding coat 2 relative with optical semiconductor 8.
Then, as shown in Figure 3 (b), use sheet 1 to bury (coating) optical semiconductor 8 underground by photosemiconductor.Particularly, with respect to substrate 7 sheet 1 for thermo-compressed photosemiconductor.
Thus, upper surface and the side of bonding coat 2 coatings and encapsulation optical semiconductor 8.
Obtain thus optical semiconductor device 6.
In addition, also can be in the 1st silicone resin and/or the 2nd silicone resin absorb fillers and/or fluor (aftermentioned).
As weighting agent, for example, can list: silicon-dioxide (silica), barium sulfate, barium carbonate, barium titanate, titanium oxide, zirconium white, magnesium oxide, zinc oxide, ferric oxide, aluminium hydroxide, calcium carbonate, stratiform mica, carbon black, diatomite, glass fibre, silicone resin particulate etc.
Fluor as long as there is the particle of wavelength Conversion function and for optical semiconductor device 6(is referring to Fig. 2 (b)) in the known fluor that uses be just not particularly limited, for example can list: blue light can be converted to sodium yellow yellow fluorophor, blue light can be converted to the known fluor such as red-emitting phosphors of red light.
As yellow fluorophor, can list: for example Y 3a l5o 12: Ce(YAG(yttrium aluminum garnet): Ce), Tb 3a l3o 12: Ce(TAG(terbium aluminium garnet): Ce) etc. there is the carbuncle type fluor of carbuncle type crystalline structure, the oxynitride fluor such as such as Ca-α-SiAlON etc.
As red-emitting phosphors, for example, can list CaAlSiN 3: Eu, CaSiN 2: the nitride phosphors such as Eu etc.
In addition, weighting agent and fluor are particulate state, and its shape is not particularly limited, for example, can list roughly spherical, substantially planar, needle-like etc. roughly.The mean value median size of the maximum length of weighting agent and fluor (referring to median size when roughly spherical) is for example more than 0.1 μ m, more than being preferably 0.2 μ m, and is for example below 500 μ m, is preferably below 200 μ m.
The compounding ratio of weighting agent and fluor is adjusted to the degree of the effect (being specially the transparency) that does not hinder excellence of the present invention, particularly, with respect to the 1st silicone resin and/or the 2nd silicone resin 100 mass parts, be for example more than 0.01 mass parts, more than being preferably 1 mass parts, and be for example, below 80 mass parts, to be preferably below 70 mass parts.
the 2nd embodiment
In Fig. 4 and Fig. 5, for the member same with the 1st embodiment, be marked with identical Reference numeral, description is omitted.
In the 1st embodiment, as shown in Figure 1, form non-bonding coat 3 by sheet, but also can as shown in Figure 4, become stratiform by granulated.
As shown in Figure 4, photosemiconductor possesses bonding coat 2 and is arranged on the non-bonding coat 3 of the stratiform of the upper surface of bonding coat 2 with sheet 1.In addition, on conductive layer 3, be provided with the second release sheet 5.Be arranged with the 1st release sheet 4 at bonding coat 2.
Non-bonding coat 3 becomes the stratiform of extending along face direction by the granulated being formed by the 2nd silicone resin.
Shape to the each particle being formed by the 2nd silicone resin is not particularly limited, for example, can list roughly spherical, roughly tabular (or roughly flakey), roughly needle-like, indefinite shape (Block shape) etc.It should be noted that, in Fig. 4, depict particle as cross section roughly spherical, but its shape is described above, not circumscribed.
The mean value (referring to median size while being spherical) of the maximum length of particle is for example more than 0.01 μ m, more than being preferably 1 μ m, and is for example below 100 μ m, is preferably below 50 μ m.
This particle can use the preshaped particle for above-mentioned shape, or also can be by larger particle pulverizing (comprise and pulverizing) is configured as to above-mentioned shape.Preferably by larger particle is pulverized to be configured as above-mentioned shape.
Particle carries out coating in the mode of the upper surface that do not expose in fact bonding coat 2, and particle is layered in the upper surface of bonding coat 2 with closely sealed shape.In addition multiple particles configuration adjacent one another are in face direction.And then though not shown in Fig. 4, particle can be overlapped on thickness direction.
The mean thickness of non-bonding coat 3 is for example more than 0.1 μ m, more than being preferably 1 μ m, and is for example below 50 μ m, is preferably below 30 μ m.The mean thickness of non-bonding coat 3 for example calculates by the cross section of observing layer.
Then, the photosemiconductor shown in Fig. 4 is described by the manufacture method of sheet 1.
First,, referring to Fig. 4, bonding coat 2 is layered on the 1st release sheet 4.
Then, non-bonding coat 3 is layered in to the upper surface of bonding coat 2.
While wanting non-bonding coat 3 to be layered in the upper surface of bonding coat 2, the particle being formed is coated on to the upper surface of bonding coat 2 by the 2nd silicone resin.Particularly, make in advance the cottons such as gauze adhere to absorbing particles, smear at the upper surface of bonding coat 2 with this gauze.Or spread particle from bonding coat 2 tops.
Then, the 2nd release sheet 5 is layered on non-bonding coat 3.
Thus, obtain thickness direction sheet 1 for photosemiconductor that clamp by the 1st release sheet 4 and the 2nd release sheet 5, that formed by bonding coat 2 and non-bonding coat 3.
Consider that non-bonding coat 3 becomes stratiform by granulated, photosemiconductor for the sheet 1 of the photosemiconductor use sheet 1(just having manufactured except the 1st release sheet 4 and the 2nd release sheet 5) lower than the transmittance of the 1st embodiment with respect to the transmittance of the light of wavelength 500nm, with respect to the transmittance of the 1st embodiment, be for example below 95%, and then be below 90%, and be more than 60%.Particularly, photosemiconductor is for example more than 60%, to be preferably more than 70% with sheet 1 with respect to the transmittance of the light of wavelength 500nm, and is for example, below 99%, to be preferably below 90%.
The upper surface of sheet 1 for the photosemiconductor of just having manufactured, non-bonding coat 3 one sides face with respect to (the nothing stretching of polypropylene (PP) sheet.The thickness 50 μ peel adhesion of 25 DEG C m) is for example, below 0.40N/2cm, to be preferably below 0.20N/2cm, and is for example more than 0.001N/2cm.
Then, the method that as case chip, optical semiconductor 8 is encapsulated to manufacture optical semiconductor device 6 with this photosemiconductor sheet 1 is except peeling off the operation of the 1st release sheet 4, same with the 1st embodiment.
The Young's modulus of 25 DEG C of encapsulated layer 9 is for example more than 0.5MPa, more than being preferably 1MPa, and is for example, below 15MPa, to be preferably below 10MPa.
In addition, encapsulated layer 9 is for example more than 80%, to be preferably more than 90% with respect to the transmittance of the light of wavelength 500nm, and is for example, below 99.9%, to be preferably below 99%.
So, according to this sheet 1 for photosemiconductor, because non-bonding coat 3 becomes stratiform by granulated, therefore can make technique simple.,, owing to forming non-bonding coat 3 by coated particle, therefore can make its manufacturing process easy.
variation
The 2nd embodiment is as shown in the solid line of Fig. 4, at photosemiconductor with being provided with the 2nd release sheet 5 on sheet 1, and for example also can be as shown in the long and short dash line of Fig. 4, peel off the 2nd release sheet 5 from the photosemiconductor that firm manufacture is good with sheet 1, then, the photosemiconductor sheet 1 of having peeled off the 2nd release sheet 5 is operated to (specifically preserve for a long time and/or transport).
In addition, in the 2nd embodiment, as shown in Fig. 5 (a), make non-bonding coat 3 relative with optical semiconductor 8, and for example also can be as shown in Figure 6 (a), make bonding coat 2 relative with optical semiconductor 8.
Now, first, make bonding coat 2 relative with optical semiconductor 8.
Then, as shown in Figure 6 (b), use sheet 1 to bury (coating) optical semiconductor 8 underground by photosemiconductor.Particularly, with respect to substrate 7 sheet 1 for thermo-compressed photosemiconductor.
Thus, upper surface and the side of bonding coat 2 coatings and encapsulation optical semiconductor 8.
Obtain thus optical semiconductor device 6.
embodiment
The numerical value of embodiment shown below etc. can be replaced into the numerical value (being higher limit or lower value) of recording in above-mentioned embodiment.
embodiment 1
corresponding the 1st embodiment
1. the preparation of bonding coat
According to the embodiment 1 of TOHKEMY 2012-82320 communique, form bonding coat (referring to the downside figure of Fig. 1 (a)) at the upper surface of the 1st release sheet being formed by PET sheet.
Wherein, (the 1st silicone resin, condensation reaction addition reaction curing type silicone resin combination, unreacted silicon hydrogen base are residual by the Thermocurable silicone resin on B rank for bonding coat.) with thickness 600 μ m preparations (referring to the downside figure of Fig. 1 (a)).
2. the preparation of non-bonding coat
By 75 DEG C of KR-220L(the 2nd silicone resins, poly methyl silsesquioxane, softening temperature) be dissolved in acetone and prepare solution, make solid component concentration reach 50 quality %, then, non-treated side by prepared solution coat at the 2nd release sheet being formed by PET sheet, makes the thickness after heating be about 10 μ m.
Then, film is heated 30 minutes at 100 DEG C, remove acetone, prepare non-bonding coat (referring to the upside figure of Fig. 1 (a)) at the upper surface of the 2nd release sheet thus.
3. the making of sheet for photosemiconductor
Then, with pressure 0.01MPa by bonding coat and non-bonding coat laminating (referring to Fig. 1 (b)).
Thus, make by the 1st release sheet and the 2nd release sheet photosemiconductor sheet clamping, that formed by bonding coat and non-bonding coat.
embodiment 2
corresponding the 1st embodiment
Replace KR-220L to use containing vinyl poly methyl silsesquioxane (70 DEG C of the 2nd silicone resin, softening temperatures), in addition process similarly to Example 1, make photosemiconductor sheet.
embodiment 3
corresponding the 2nd embodiment
1. the preparation of bonding coat
Prepare similarly to Example 1 bonding coat (referring to Fig. 4).
2. the preparation of non-bonding coat
Use mortar and pestle by 75 DEG C of KR-220L(the 2nd silicone resins, polymethyl siloxane, softening temperature) pulverize, the mean value of making maximum length is the particulate state of 10 μ m, gauze is adhered to and absorb this particle, by this gauze, (there is no unevenly) equably the KR-220L of coated particle shape at the whole face of upper surface of bonding coat.
Thus, form non-bonding coat (referring to Fig. 4) at the upper surface of bonding coat.Wherein, the mean thickness of non-bonding coat is 30 μ m.
Thus, make by the 1st release sheet and the 2nd release sheet sheet of photosemiconductor (referring to Fig. 4) clamping, that formed by bonding coat and non-bonding coat.
embodiment 4
corresponding the 2nd embodiment
Replace KR-220L to use containing vinyl poly methyl silsesquioxane (70 DEG C of the 2nd silicone resin, softening temperatures), in addition process similarly to Example 1, make sheet (referring to Fig. 4) for photosemiconductor.
comparative example 1
Non-bonding coat is not set, in addition processes similarly to Example 1, make photosemiconductor sheet.
comparative example 2
(particulate state, spherical, median size 10 μ m), in addition process similarly to Example 3, make sheet (referring to Fig. 4) for photosemiconductor to replace KR-220L to use talcum.
evaluate
Following project is evaluated.They the results are shown in table 1.
1. transmittance
the transmittance of 1-1. initial (just manufacturing)
a. photosemiconductor sheet
Use the sheet for photosemiconductor of just having made (bonding coat and non-bonding coat) of the each embodiment of spectrophotometric determination and each comparative example with respect to the transmittance of the light of wavelength 500nm, as initial total light transmittance.
Particularly, according to JIS K7361-1(1997 version) the record of " test method of the total light transmittance of plastics-transparent material ", by the spectrophotometer (U-4100, Hitachi Co., Ltd manufacture) of integrating sphere is housed, measure the photosemiconductor transmittance of sheet of having peeled off the 1st release sheet and the 2nd release sheet.
b. bonding coat and non-bonding coat
For the transmittance separately of the non-bonding coat of preparation in the bonding coat of preparing in embodiment 1～4 and comparative example 1,2 and embodiment 1 and 2, measure by method similar to the above.
transmittance after 1-2. heating
The photosemiconductor sheet of measuring each embodiment and each comparative example by method similar to the above heats the transmittance after 3 times at 150 DEG C.
2. stripping test (peel adhesion)
the peel adhesion of sheet for 2-1. photosemiconductor
At the face of bonding coat one side of the sheet isolated body being formed by PP of fitting for the photosemiconductor of just having made of embodiment 1～4 and comparative example 2, their are cut off to be processed into 2cm wide, make sample.
Then, for sample, use universal testing machine (Autograph, Shimadzu Scisakusho Ltd manufacture), the 180 degree stripping tests of implementing isolated body to peel off with the angle of 180 degree with sheet with respect to photosemiconductor.In addition, the peeling rate of isolated body is 30cm/ minute.In addition, temperature when test is 25 DEG C.
In addition,, for comparative example 1, at the upper surface laminating isolated body of bonding coat, in addition implement stripping test by method similar to the above.
the peel adhesion of 2-2. bonding coat
For the bonding coat of preparation in embodiment 1～4 and comparative example 1,2, implement 180 degree stripping tests by method similar to the above.
3. Young's modulus (impression meter method)
3-1. bonding coat
For the bonding coat of preparation in embodiment 1～4 and comparative example 1,2, use the Young's modulus at fixed 25 DEG C of nano impress instrumentation.
the non-bonding coat of 3-2.
For the non-bonding coat of preparation in embodiment 1 and 2, use the Young's modulus at fixed 25 DEG C of nano impress instrumentation.
table 1
It should be noted that, although provided foregoing invention as illustrated embodiment of the present invention, this is only to illustrate, and should not do limited explanation.Those skilled in the art variation clearly of the present invention be included in protection scope of the present invention.
utilizability in industry
Photosemiconductor is the encapsulation for semiconductor element with sheet.

Claims (9)

1. a photosemiconductor sheet, is characterized in that, possesses the bonding coat being formed by the 1st silicone resin, and is arranged at a non-bonding coat face, that formed by the 2nd silicone resin of the thickness direction of described bonding coat.
2. photosemiconductor sheet according to claim 1, is characterized in that, described the 2nd silicone resin is solid-state at normal temperatures, and the 2nd silicone resin is thermoplastic.
3. photosemiconductor sheet according to claim 1, is characterized in that, described the 1st silicone resin is the Thermocurable silicone resin on B rank.
4. photosemiconductor sheet according to claim 1, is characterized in that, described the 2nd silicone resin is silsesquioxane.
5. photosemiconductor sheet according to claim 4, is characterized in that, described silsesquioxane contains the functional group of reacting with described the 1st silicone resin.
6. photosemiconductor sheet according to claim 1, is characterized in that, this photosemiconductor is the encapsulation for optical semiconductor with sheet.
7. photosemiconductor sheet according to claim 1, is characterized in that, described non-bonding coat is formed by sheet, and described is formed by described the 2nd silicone resin.
8. photosemiconductor sheet according to claim 1, is characterized in that, described non-bonding coat becomes stratiform by granulated, and described particle is formed by described the 2nd silicone resin.
9. an optical semiconductor device, is characterized in that, the optical semiconductor that possesses photosemiconductor sheet and encapsulate by described photosemiconductor sheet,
Described photosemiconductor possesses the bonding coat being formed by the 1st silicone resin with sheet, and is arranged at a non-bonding coat face, that formed by the 2nd silicone resin of the thickness direction of described bonding coat.
CN201410042958.7A 2013-02-04 2014-01-29 Sheet For Optical Semiconductor, And Optical Semiconductor Device Pending CN103965794A (en)

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CN203923079U (en) 2014-11-05

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