CN103963467B - Oscillating plate, liquid injection apparatus and printing device - Google Patents
Oscillating plate, liquid injection apparatus and printing device Download PDFInfo
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- CN103963467B CN103963467B CN201410172696.6A CN201410172696A CN103963467B CN 103963467 B CN103963467 B CN 103963467B CN 201410172696 A CN201410172696 A CN 201410172696A CN 103963467 B CN103963467 B CN 103963467B
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Abstract
The embodiment of the present invention provides a kind of oscillating plate, liquid injection apparatus and printing device.The oscillating plate provided in the present invention, comprises silicon dioxide layer and silicon nitride layer, and described silicon nitride layer is arranged on described silicon dioxide layer; Wherein, the stress of described silicon dioxide layer and the stress of described silicon nitride layer are cancelled out each other, to make the combined stress of described oscillating plate for zero, thus the not easily buckling deformation of described oscillating plate, also can prevent from repeatedly driving the displacement variable of piezoelectric element in piezoelectric element process to reduce simultaneously.
Description
Technical field
The embodiment of the present invention relates to fluid jetting head manufacturing technology, particularly relates to a kind of oscillating plate, liquid injection apparatus and printing device.
Background technology
In prior art, by arranging piezoelectric element on the oscillating plate of fluid jetting head, and apply voltage to piezoelectric element and make oscillating plate be out of shape or vibrate, thus making the fluid jetting head ejection ink droplet in printing device.Wherein, piezoelectric element generally adopts leaded piezoelectric, and the facial pallor in piezoelectric element is easily diffused into the silicon dioxide layer as oscillating plate, the fusing point of silicon dioxide layer is reduced, therefore, when silicon dioxide layer is fired piezoelectric, the easy melted by heat of silicon dioxide layer.
In prior art, by first arranging titanium dioxide zirconium layer on the silicon dioxide layer of oscillating plate, and then piezoelectric being set in titanium dioxide zirconium layer, the lead composition in piezoelectric can be prevented to be diffused in the silicon dioxide layer of oscillating plate.Wherein, be oxidized by the substrate being formed with zirconium layer is inserted to be heated in the thermal oxidation furnace of 800 DEG C of-1000 DEG C of temperature with the speed being more than or equal to 200mm/min, form titanium dioxide zirconium layer, wherein, the heating rate of zirconium layer is 300 DEG C/min, annealing temperature is set at 800 DEG C, and the time period is adjusted between 0.5h to 2h.
But, in existing oscillating plate, the generation temperature of titanium dioxide zirconium layer is higher and annealing time is longer, zirconium layer produces larger stress and causes occurring crackle in titanium dioxide zirconium layer when being subject to thermal oxide, and titanium dioxide zirconium layer is after the cooling period because the release of thermal stress causes the distortion of oscillating plate and pressure chamber to make zirconium dioxide pull-up fall.On the other hand, in prior art, silicon base is easily buckling deformation thus cause the disengaging of the thin layer of adjacent oscillating plate in temperature-fall period again after being subject to high-temperature heating.
Summary of the invention
The embodiment of the present invention provides a kind of oscillating plate, liquid injection apparatus and printing device, the not easily buckling deformation of described oscillating plate, also can prevent from repeatedly driving the displacement variable of piezoelectric element in piezoelectric element process to reduce simultaneously.
First aspect, the embodiment of the present invention provides a kind of oscillating plate, comprising: silicon dioxide layer and silicon nitride layer, and described silicon nitride layer is arranged on described silicon dioxide layer;
Wherein, the stress of described silicon dioxide layer and the stress of described silicon nitride layer are cancelled out each other, to make the combined stress of described oscillating plate for zero.
In conjunction with first aspect, in the first possible implementation of first aspect, described silicon dioxide layer is formed by plasma enhanced chemical vapor deposition PECVD method;
Described silicon nitride layer is formed by described PECVD method.
In conjunction with the first possible implementation of first aspect or first aspect, in the implementation that the second of first aspect is possible, the Young's modulus of described oscillating plate is E, and 130GPa≤E≤170GPa.
In conjunction with the implementation that the second of first aspect is possible, in the third possible implementation of first aspect, the thickness of described oscillating plate is H, and 1.0um≤H≤1.5um.
Second aspect, the embodiment of the present invention provides a kind of liquid injection apparatus, comprising: substrate, oscillating plate, piezoelectric element and nozzle plate as described in implementation arbitrary in above-mentioned first aspect;
Wherein, described oscillating plate is arranged on the substrate, and described nozzle plate is arranged on described oscillating plate; At least one pressure chamber is spaced between described nozzle plate and described oscillating plate; Described piezoelectric element is arranged on the oscillating plate in described pressure chamber;
Wherein, described nozzle plate arranges multiple nozzle; Wherein, described nozzle and described pressure chamber one_to_one corresponding; Public chamber is provided with between described nozzle plate and described substrate; Be provided with restricted flow passage between at least one pressure chamber described and described public chamber, wherein, the sectional area of described restricted flow passage is less than the sectional area of described pressure chamber;
Wherein, described substrate is hollow structure, as the deformation space of described oscillating plate.
In conjunction with second aspect, in the first possible implementation of second aspect, described multiple nozzle is dislocation arrangement.
In conjunction with the first possible implementation of second aspect, in the implementation that the second of second aspect is possible, the material of described substrate is silicon.
In conjunction with the implementation that the second of second aspect is possible, in the third possible implementation of second aspect, described piezoelectric element, comprising: bottom electrode, Thin Piezoelectric rete and top electrode.
The third aspect, the embodiment of the present invention provides a kind of printing device, comprises: the liquid injection apparatus as described in implementation arbitrary in above-mentioned second aspect, defeated paper matrix block and governor circuit.
The oscillating plate provided in the present invention, comprises silicon dioxide layer and silicon nitride layer, and described silicon nitride layer is arranged on described silicon dioxide layer; Wherein, the stress of described silicon dioxide layer and the stress of described silicon nitride layer are cancelled out each other, to make the combined stress of described oscillating plate for zero, thus the not easily buckling deformation of described oscillating plate, also can prevent from repeatedly driving the displacement variable of piezoelectric element in piezoelectric element process to reduce simultaneously.
Accompanying drawing explanation
Fig. 1 is the distortion schematic diagram of oscillating plate when to be subject to compression or tensile stress or stress be zero;
Fig. 2 is the structural representation of oscillating plate of the present invention;
Fig. 3 is the structural representation forming silicon dioxide layer in the present invention;
Fig. 4 for forming the structural representation of silicon nitride layer on the basis of structure shown in Fig. 3;
Fig. 5 A is the cross-sectional view one of liquid injection apparatus of the present invention;
Fig. 5 B is the cross-sectional view two of liquid injection apparatus of the present invention;
Fig. 6 A is the structural representation forming bottom electrode on oscillating plate;
Fig. 6 B for forming the structural representation of Thin Piezoelectric rete on the basis of structure shown in Fig. 6 A;
Fig. 6 C for forming the structural representation of top electrode on the basis of structure shown in Fig. 6 B;
Fig. 7 for forming the structural representation of insulating protective film on the basis of structure shown in Fig. 6 C;
Fig. 8 for forming the deformation space of oscillating plate and the structural representation of ink-feed channel on the basis of structure shown in Fig. 7;
Fig. 9 is the structural representation of nozzle plate of the present invention;
Figure 10 is the structural representation of liquid injection apparatus of the present invention;
Figure 11 is the plan structure schematic diagram of liquid injection apparatus of the present invention;
Figure 12 be in Figure 11 liquid injection apparatus A-B to cross-sectional view;
Figure 13 A be liquid injection apparatus of the present invention at oscillating plate away from view during nozzle;
Figure 13 B be liquid injection apparatus of the present invention oscillating plate near nozzle time view;
Figure 13 C is the view of liquid injection apparatus of the present invention when oscillating plate resiles;
Figure 14 is the structural representation of printing device in the embodiment of the present invention.
Detailed description of the invention
Fig. 1 is the distortion schematic diagram of oscillating plate when to be subject to compression or tensile stress or stress be zero.As shown in Figure 1, when the internal stress of oscillating plate is tensile stress, oscillating plate can be subject to the effect of tensile stress and cause the buckling deformation of two ends higher than middle part of oscillating plate, when the internal stress of oscillating plate is zero, oscillating plate is in the smooth state of nature, when the internal stress of oscillating plate is compression, oscillating plate can be subject to the effect of compression and cause the buckling deformation of middle part higher than two ends of oscillating plate.
In the process of existing manufacture shower nozzle, need high-temperature oxydation or high-temperature calcination and annealing process, simultaneously due between oscillating plate and piezoelectric element, the material different (namely the thermal coefficient of expansion of layers of material is different) that forms of the inner and piezoelectric element inner. layers of oscillating plate, therefore, easily cause, between each layer, buckling deformation occurs.
Fig. 2 is the structural representation of oscillating plate of the present invention, and as shown in Figure 2, oscillating plate provided by the invention, comprising: silicon dioxide layer (SiO
2) and silicon nitride layer (Si
3n
4), described silicon nitride layer is arranged on described silicon dioxide layer; Wherein, the stress of described silicon dioxide layer and the stress of described silicon nitride layer are cancelled out each other, to make the combined stress of described oscillating plate for zero.
In the embodiment of the present invention, the stress of the wherein one deck in the double-decker of described oscillating plate is tensile stress, the stress of another layer should be then compression, can cancel out each other to make described tensile stress and described compression, thus reduce the bending of described oscillating plate, and effectively can prevent the reduction of oscillating plate displacement when the effect being subject to piezoelectric element.
Fig. 3 is the structural representation forming silicon dioxide layer in the present invention, as shown in Figure 3, in the embodiment of the present invention, form silicon dioxide layer 31 on the base 1, the thickness of this silicon dioxide layer is about 500nm, alternatively, described silicon dioxide layer can pass through plasma enhanced chemical vapor deposition (PlasmaEnhancedChemicalVaporDeposition, be called for short PECVD) method formation, concrete generation step is as follows: the silicon chip as substrate 1 cleans by (1), in order in deionized water,--acetone--------clean in deionized water deionized water-acid solution deionized water-alkaline solution deionized water-ethanol by deionized water--hydrofluoric acid (HF) solution of 5% content--, secondly dry, then the silicon base after oven dry is put into the reaction chamber of PECVD device, (2) this reaction chamber is evacuated to the vacuum of 5 × 10-3Pa, (3) depositing temperature this reaction chamber being heated to needs is as 300 DEG C and keep 30 minutes, (4) reacting gas nitrous oxide (N is passed into this reaction chamber
2and silane (SiH O)
4), and adjust flux meter is to suitable parameter, wherein, chemical equation is: SiH
4+ N
2o → SiO
2+ H
2↑+N
2↑, (5) opening radio frequency power source, radio-frequency power is adjusted to the power that experiment needs, due to certain reflection power can be produced in experiment, reflection power being adjusted to minimum by regulating adaptation, (6) timing is started to reacting end, (7) this reaction chamber is lowered the temperature, complete the growth of silica membrane.
In the embodiment of the present invention, when adopting PECVD method deposition of silica, being improved the performance of film by balanced gas composition and radio-frequency power, needing N
2o:SiH
4flow-control in certain level, thus it is minimum that film defects is dropped to.Wherein, on the impact of the physics and chemistry character of silica membrane very greatly, when the deposition temperature is increased, the density straight line of silica membrane rises, and film becomes fine and close for depositing temperature and radio-frequency power; When radio-frequency power increases, gas activation efficiency improves, and reactant concentration increases, and therefore, the silica thin film structure of deposition is fine and close, improves the corrosion resistance of film.But radio-frequency power can not be excessive, otherwise sedimentation rate is too fast, the uniformity of film is declined (as short texture, pinhold density increase), and passivation ability is degenerated.
In the embodiment of the present invention, utilize the preferred processing condition of PECVD device cvd silicon dioxide film: depositing temperature is 300 DEG C, radio-frequency power is 200W, and gas mixing ratio is N
2o:SiH
4=20:60sccm, pressure limit is 30Pa.
Further, carry out alternating growth silica membrane to silicon base 1 under radio frequency source (higher frequency 13.56MHz and Frequency 100KHz), the frequency of general definition radio frequency source is low frequency power source lower than 4MHz, is high frequency power source higher than 4MHz.Analyze the stress of silica membrane, list is as shown in table 1:
Table 1: the stress sheet of silica membrane
| High-frequency/low-frequency action time (s) | Total time (min) | Film thickness (nm) | Stress (GPa) |
| 0/20 | 30 | 500 | -0.39 |
| 5/15 | 30 | 500 | -0.39 |
| 10/10 | 30 | 500 | -0.40 |
| 15/5 | 30 | 500 | -0.40 |
| 20/0 | 30 | 500 | -0.41 |
Wherein, the stress of film refers to the internal stress (membrane stress) produced in film, wherein, stress σ is represented by the Young's modulus of elasticity Y of film, strain stress and thickness m, i.e. σ=ε × Y × m, the negative sign of stress intensity represents that the stress of film is compression, otherwise is tensile stress.In the embodiment of the present invention, the action time of high and low frequency is using 20s as a change-over period, be compression by the stress of the known silica of table 1, size is about 0.4GPa, and namely the stress intensity of ratio to silica of the action time of high and low frequency does not have too much influence.
In the embodiment of the present invention, the stress due to silica is compression, then in order to make the combined stress of oscillating plate be zero or close to zero, therefore, the stress of silicon nitride should be tensile stress, and the stress intensity of size and silica is tending towards equal.
Fig. 4 for forming the structural representation of silicon nitride layer on the basis of structure shown in Fig. 3, as shown in Figure 4, in the embodiment of the present invention, silicon dioxide layer 31 is formed silicon nitride layer 32, the thickness of this silicon nitride layer is about 500nm, and alternatively, described silicon nitride layer can be formed by PECVD method.Wherein, the reacting gas forming silicon nitride is NH
3and SiH
4, wherein, SiH
4(use N
2be diluted to 12%) and NH
3gas flow ratio is between 0.1 to 4; Deposition temperature is between 200 DEG C to 400 DEG C; Reaction pressure is 30P
aleft and right.Further, after passing into reaction source gas in the above conditions, series of chemical occurs, and wherein, chemical equation is:
SiH
4+NH
3→Si
3N
4+H
2↑。
In the embodiment of the present invention, by regulating above-mentioned technological parameter, the silicon nitride film with different stress can be generated.Found through experiments: when adopting higher frequency as radio frequency power source, the stress of silicon nitride is tensile stress, when adopting Frequency as radio frequency power source, the stress of silicon nitride is compression.Alternatively, when needing generation stress to be the silicon nitride film of tensile stress, preferably, the high frequency power source of 100 to 300W can be adopted, and the frequency of this high frequency power source is 13.56MH; When needing generation stress to be the silicon nitride film of compression, preferably, the low frequency power source of 100 to 300W can be adopted, and the frequency in this low frequency power source is 100KHz.From analyzing above, by changing the radio frequency power source action time parameter of PECVD, required tensile stress or the silicon nitride film of compression just can be obtained.In the embodiment of the present invention, in order to obtain the stress value (identical with the compression size of described silica) that the technical program needs, generate the preferred processing condition of silicon nitride film: depositing temperature is 350 DEG C, and radio-frequency power is 300W, and pressure is 30Pa.Analyze the stress of silicon nitride film, list is as shown in table 2:
Table 1: the stress sheet of silicon nitride film
| High-frequency/low-frequency action time (s) | Total time (min) | Film thickness (nm) | Stress (GPa) |
| 0/20 | 35 | 500 | -0.90 |
| 5/15 | 35 | 500 | -0.61 |
| 10/10 | 35 | 500 | -0.30 |
| 15/5 | 35 | 500 | 0.25 |
| 20/0 | 35 | 500 | 0.60 |
By table 1 and table 2 known, stress due to silicon dioxide layer 31 is compression, in order to obtain the oscillating plate of zero stress, then the stress of silicon nitride layer 32 should be tensile stress, therefore, in the embodiment of the present invention, high-frequency radio frequency source action time should maintain between 15-20s, corresponding low frequency radio frequency source action time maintains between 5-0s, the silicon nitride film that stress is tensile stress can be obtained, thus the tensile stress of the compression of described silicon dioxide layer and described silicon nitride layer is cancelled out each other, to make the combined stress of described oscillating plate for zero, alternatively, in actual applications, the combined stress size of described oscillating plate can be between-10MPa to 10MPa.In the embodiment of the present invention, generated in the silicon dioxide layer of oscillating plate and the process of silicon nitride layer by PECVD method, effectively can control stress types and the size of each layer film of oscillating plate, to make the combined stress of described oscillating plate for zero.
In the embodiment of the present invention, the thickness of described silicon dioxide layer and silicon nitride layer is all 500nm, but the present invention is not as limit, and alternatively, the thickness of described silicon dioxide layer 31 is about 500-750nm, and the thickness of silicon nitride layer 32 is about 500-750nm.Wherein, can by controlling the thickness deciding this film total time of film growth, wherein, when the condition such as temperature, gas flow, pressure of deposit film is certain, the total time of growth is longer, and film is then thicker.Alternatively, the thickness of described oscillating plate is H, and 1.0um≤H≤1.5um.
In the embodiment of the present invention, because described oscillating plate is made up of silicon dioxide layer and silicon nitride layer, therefore, the Young's modulus of oscillating plate is determined jointly by the Young's modulus of silica layer film and silicon nitride layer film.Alternatively, the Young's modulus of silica is about 70GPa, the Young's modulus of silicon nitride layer is about 240GPa, the Young's modulus then vibrating flaggy is E, and 130GPa≤E≤170GPa, therefore, the vibration flaggy that the embodiment of the present invention provides has good elasticity, and cancel out each other (namely the combined stress of described oscillating plate is zero) due to the stress of the silicon dioxide layer of this oscillating plate and the stress of silicon nitride layer, this oscillating plate can prevent the buckling deformation caused due to the stress of self, can prevent from repeatedly driving the displacement variable of piezoelectric element in piezoelectric element process to reduce simultaneously.
The oscillating plate provided in the embodiment of the present invention, comprises silicon dioxide layer and silicon nitride layer, and described silicon nitride layer is arranged on described silicon dioxide layer; Wherein, the stress of described silicon dioxide layer and the stress of described silicon nitride layer are cancelled out each other, to make the combined stress of described oscillating plate for zero, thus the not easily buckling deformation of described oscillating plate, therefore the thin layer of described oscillating plate can not depart from, and also can prevent from repeatedly driving the displacement variable of piezoelectric element in piezoelectric element process to reduce simultaneously.
The cross-sectional view two of Fig. 5 A to be cross-sectional view one, Fig. 5 B of liquid injection apparatus of the present invention be liquid injection apparatus of the present invention, wherein, the cut direction of Fig. 5 A is mutually vertical with the cut direction of Fig. 5 B.As shown in Fig. 5 A and Fig. 5 B, shown liquid injection apparatus, comprising: substrate 501, oscillating plate 502, piezoelectric element 503 and nozzle plate 504; Wherein, oscillating plate 502 can adopt the structure of oscillating plate in the above embodiment of the present invention.Wherein, oscillating plate 502 is arranged in substrate 501, and nozzle plate 504 is arranged on oscillating plate 502; At least one pressure chamber 508 is spaced between nozzle plate 504 and oscillating plate 502; Piezoelectric element 503 is arranged on the oscillating plate 502 in each pressure chamber; Wherein, nozzle plate 504 is arranged multiple nozzle 509; Wherein, nozzle 509 and pressure chamber 508 one_to_one corresponding (i.e. the corresponding nozzle of each pressure chamber, described nozzle is for spraying ink droplet); Public chamber 510 is provided with between described nozzle plate and described substrate; Be provided with restricted flow passage 511 between at least one pressure chamber described and described public chamber, wherein, the sectional area of described restricted flow passage is less than the sectional area of described pressure chamber; Wherein, described substrate is hollow structure, as the deformation space 512 of described oscillating plate.Alternatively, described multiple nozzle is dislocation arrangement, and the material of described substrate is silicon.
In the embodiment of the present invention, piezoelectric element 503 is arranged on the oscillating plate 502 in each pressure chamber, wherein, oscillating plate 502 comprises silicon dioxide layer 5021 and silicon nitride layer 5022, and piezoelectric element 503 comprises bottom electrode 5031, Thin Piezoelectric rete 5032 and top electrode 5033.Fig. 6 A is the structural representation forming bottom electrode on oscillating plate 502, and Fig. 6 B for forming the structural representation of Thin Piezoelectric rete on the basis of structure shown in Fig. 6 A, and Fig. 6 C for forming the structural representation of top electrode on the basis of structure shown in Fig. 6 B.As shown in figs 6 a-6 c, in the embodiment of the present invention, silicon nitride layer 5022 forms bottom electrode 5031, Thin Piezoelectric rete 5032 and top electrode 5033 successively, wherein, concrete step is as follows:
The step of step 1, the lower pole 5031 of formation:
As shown in Figure 6A, platinum (Pt) or iridium (Ir) etc. is made to be attached on silicon nitride layer 5022 by sputtering method etc., form the composite bed of platinum layer or iridium layer or platinum and iridium composition, alternatively, the thickness of described lower electrode layer can be 0.1 ~ 0.2 μm.Alternatively, for improving the tight ness rating of bottom electrode 5031 on silicon nitride layer 5022, can before formation bottom electrode 5031, first on silicon nitride layer 5022, form by sputtering method or vacuum plater the titanium layer (not shown) be made up of titanium, further, titanium layer forms bottom electrode 5031.
The step of step 2, formation Thin Piezoelectric rete 5032:
In the embodiment of the present invention, Thin Piezoelectric rete 5032 is formed by the thin-film material with piezoelectric property, and thickness is about 1.0-1.5um, and its thickness is suitable with the thickness of vibration flaggy.Preferably, Thin Piezoelectric rete 5032 can by with lead zirconate titanate [Pb (Zr, Ti) 0
3: PZT] formed for the material of main component, also can by the solid solution [Pb (Mg of lead magnesio-niobate and lead titanates
l/3nb
2/3) 0
3-PbTi0
3: PMN-PT], or zinc niobate is plumbous and solid solution [the PbZn of lead titanates
1/3nb
2/3) O
3-PbTi0
3: PZN-PT] etc. composition.
As shown in Figure 6B, by spin coating piezoelectrics precursor film on bottom electrode 5031, make the crystallization of piezoelectrics presoma by sintering, form the film crystal layer with piezo-electric effect.Wherein, by this sintering, piezoelectrics precursor film becomes rhombohedron crystal structure by non-crystalline state, changes to the film in data-collection effect.Because the thickness forming piezoceramics layer is about 70-200nm at every turn, in order to form required thickness, can by repeatedly repeating formation and the sintering process of precursor film as above.Thickness as the precursor film supposing sintering 1 coating is 200nm, and this technique is repeated 6 times, then form the Thin Piezoelectric rete that thickness is 1.2um.In the embodiment of the present invention, by film growth repeatedly, make later layer be subject to the crystalline orientation impact of front thin film, thus make whole piezoelectric film 5032 have good crystalline orientation degree.
The step of step 3, formation top electrode 5033:
As shown in Figure 6 C, platinum (Pt) or iridium (Ir) etc. is made to be attached on Thin Piezoelectric rete 5032 by sputtering method etc., form the composite bed of platinum layer or iridium layer or platinum and iridium composition, alternatively, the thickness of described Thin Piezoelectric rete 5032 can be 50 ~ 100nm.
Further, Fig. 7 for forming the structural representation of insulating protective film on the basis of structure shown in Fig. 6 C, (bottom electrode is comprised at formation piezoelectric element 503, Thin Piezoelectric rete and top electrode) after, as shown in Figure 7, can on top electrode 5033 rotary coating erosion resistant, using the erosion resistant of coating as mask, expose, development treatment, secondly adopt the method for etching by the partial removal of erosion resistant uncoated in piezoelectric element 503, the shape of the piezoelectric element needed for formation, then the insulating protective film 5034 formed at each layer of piezoelectric element 503 and the area of the pattern aluminium oxide of side or nitrogen oxide etc. covers.
Alternatively; Fig. 8 for forming the deformation space of oscillating plate and the structural representation of ink-feed channel on the basis of structure shown in Fig. 7; as shown in Figure 8; in the embodiment of the present invention, after formation oscillating plate 502 and piezoelectric element 503 and after diaphragm 5034, the silicon nitride layer 5022 of oscillating plate 502 applies erosion resistant; then carry out exposing, develop, etching processing; thus form deformation space 512 and ink-feed channel on the base 1, and wherein, described ink-feed channel 513 and public chamber 510 UNICOM.
Further, the side deviating from deformation space 512 at oscillating plate 502 is needed to form multiple pressure chamber, the nozzle bore corresponding with described multiple pressure chamber, and the public chamber be communicated with described multiple pressure chamber, namely form the nozzle plate 504 in corresponding diagram 5.
Alternatively, Fig. 9 is the structural representation of nozzle plate of the present invention, as shown in Figure 9, first in the second substrate, apply crosslinkable polymeric material, as epoxy resin (photoresist SU8 etc.), the light sensitivity silicones or photosensitive epoxy siloxanes etc. of Photoimageable, carry out using described polymeric material as mask exposing, development treatment, and etch away sections material, thus form the shapes such as nozzle 509, pressure chamber 508, public chamber 510, alternatively, the material in described second base can be lucite.
Figure 10 is the structural representation of liquid injection apparatus of the present invention.Alternatively, nozzle plate 504 is bonded in the side that oscillating plate 502 deviates from substrate 501, as shown in Figure 10, mineralization pressure chamber 508, public chamber 510 and nozzle 509, wherein, between each pressure chamber 508 and public chamber 510, be also provided with restricted flow passage 511, the sectional area of restricted flow passage 511 is less than the sectional area of pressure chamber 508.Alternatively, the side that substrate 501 deviates from oscillating plate 502 is also bonded with cover plate 514, to increase the mechanical strength of substrate 501.
Figure 11 is the plan structure schematic diagram of liquid injection apparatus of the present invention, as shown in figure 11, in the liquid injection apparatus of the embodiment of the present invention, nozzle 509 is dislocation arrangement, and alternatively, carries out the structural representation after subdivision as shown in Figure 10 with CD direction to the first half of this liquid injection apparatus.
Figure 12 be in Figure 11 liquid injection apparatus A-B to cross-sectional view, as shown in figure 12, the liquid injection apparatus of the embodiment of the present invention comprises multiple pressure chamber 508, the corresponding nozzle 509 of each pressure chamber, oscillating plate 502 in each pressure chamber 508 is arranged a piezoelectric element 503, wherein, public chamber is communicated with each pressure chamber.Alternatively, when arbitrary piezoelectric element 503 receives voltage signal, can the stress that oscillating plate 502 is larger be given, make oscillating plate 502 that deformation occur, thus by distortion, the ink in each pressure chamber 508 be extruded by nozzle 509.
Figure 13 A be liquid injection apparatus of the present invention at oscillating plate away from view during nozzle, Figure 13 B be liquid injection apparatus of the present invention oscillating plate near nozzle time view, Figure 13 C is the view of liquid injection apparatus of the present invention when oscillating plate resiles.
As shown in FIG. 13A, after piezoelectric element 503 receives voltage signal, the distortion of this piezoelectric element moment is understood to the larger stress of oscillating plate 502, oscillating plate 502 can move to the direction away from nozzle 509 together with piezoelectric element 503, namely oscillating plate 502 can be recessed to deformation space 512, form " drawing " this process, the liquid level at nozzle 509 place is recessed simultaneously also to pressure chamber 508, can be formed " meniscus ".Wherein, in the process of " drawing " for the first time (oscillating plate 502 be out of shape and away from nozzle 509), the size of this oscillating plate distortion is proportional to the size of nozzle ejection drop.
As shown in Figure 13 B, when applying with the contrary voltage signal of " drawing " pattern to piezoelectric element 503, oscillating plate 502 can move to the direction near nozzle 509 together with piezoelectric element 503, thus the ink in pressure chamber 508 is extruded to nozzle 509 place, and ink is discharged from nozzle 509, form " pushing away " this process.Alternatively, in this course, ink outside flowing except nozzle 509, part ink is also had to be flowed to public chamber 510 by restricted flow passage 511, produce the ink of backflow, but due to the existence of restricted flow passage 511, the ink flowed to public chamber 510 by restricted flow passage 511 will be reduced, thus have more ink to flow out from nozzle 509, to reduce the loss of ink backflow, and then decrease the time that ink fills again, also namely shorten the injection cycle of ink droplet, thus improve print frequency.In addition, owing to there being more ink to flow out from nozzle 509, the vibration displacement that can reduce piezoelectric element 503 also can reach the ink droplet spraying corresponding size simultaneously, thus improves the life-span of piezoelectric element 503, makes printhead durable more.
As shown in fig. 13 c, after completing " pushing away " this process, when applying the voltage signal with first time " drawing " process is identical to piezoelectric element 503, oscillating plate 502 will resile, and a part of ink moves in each pressure chamber 508, in addition a part of ink due to inertia continue move to nozzle 509 place, thus the ink be squeezed in outside nozzle 509 is broken, form ink droplet, wherein, ink droplet can be ejected on print media due to effect of inertia, namely completes the course of injection of single ink droplet.Alternatively, the course of injection of multiple ink droplet is identical with the course of injection of above-mentioned single ink droplet, and the embodiment of the present invention does not repeat them here.
Liquid injection apparatus in the embodiment of the present invention, comprising: substrate, oscillating plate, piezoelectric element and nozzle plate; Wherein, the vibration board structure schematic diagram that described oscillating plate can adopt the above embodiment of the present invention to provide, described oscillating plate is arranged on the substrate, and described nozzle plate is arranged on described oscillating plate; At least one pressure chamber is spaced between described nozzle plate and described oscillating plate; Described piezoelectric element is arranged on the oscillating plate in described pressure chamber; Wherein, described nozzle plate arranges multiple nozzle; Wherein, described nozzle and described pressure chamber one_to_one corresponding; Public chamber is provided with between described nozzle plate and described substrate; Be provided with restricted flow passage between at least one pressure chamber described and described public chamber, wherein, the sectional area of described restricted flow passage is less than the sectional area of described pressure chamber; Wherein, described substrate is hollow structure, as the deformation space of described oscillating plate.In the liquid injection apparatus that the embodiment of the present invention provides, the combined stress of oscillating plate is zero, thus the not easily buckling deformation of described oscillating plate, can not depart between the thin layer of also i.e. described oscillating plate, also can prevent from reducing at the variable quantity of the displacement repeatedly driving piezoelectric element in piezoelectric element process simultaneously, therefore, the liquid injection apparatus of embodiment of the present invention durable more.
Figure 14 is the structural representation of printing device in the embodiment of the present invention, and as shown in figure 14, the printing device 140 that the present embodiment provides, comprising: liquid injection apparatus 1401, defeated paper matrix block 1402 and governor circuit 1403.Wherein, liquid injection apparatus 1401 can adopt the structural representation of liquid injection apparatus in the above embodiment of the present invention, and it realizes principle and technique effect is similar, repeats no more herein.
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (7)
1. an oscillating plate, is characterized in that, comprising: silicon dioxide layer and silicon nitride layer, and described silicon nitride layer is arranged on described silicon dioxide layer;
Wherein, the stress of described silicon dioxide layer and the stress of described silicon nitride layer are cancelled out each other, to make the combined stress of described oscillating plate for zero;
Described silicon dioxide layer and described silicon nitride layer adopt following step to generate:
By silicon chip successively in deionized water,--acetone--------------clean in deionized water acid solution deionized water alkaline solution deionized water ethanol deionized water by deionized water--hydrofluoric acid solution--;
By described silicon chip drying, and put into the reaction chamber of plasma enhanced chemical vapor deposition PECVD device;
Described reaction chamber is evacuated to 5 × 10
-3the vacuum of Pa, and be heated to 300 DEG C and keep 30 minutes;
Pass into nitrous oxide and silane to described reaction chamber, wherein the gas mixing ratio of nitrous oxide and silane is 20:60sccm;
Open radio frequency power source, complete the growth of described silicon dioxide layer, the radio-frequency power of wherein said radio frequency power source is 200W;
In described reaction chamber, pass into ammonia and silane, and depositing temperature be 350 DEG C, radio-frequency power completes the growth of described silicon nitride layer under being the condition of 300W.
2. oscillating plate according to claim 1, is characterized in that, the Young's modulus of described oscillating plate is E, and 130GPa≤E≤170GPa.
3. oscillating plate according to claim 2, is characterized in that, the thickness of described oscillating plate is H, and 1.0um≤H≤1.5um.
4. a liquid injection apparatus, is characterized in that, comprising: substrate, oscillating plate, piezoelectric element and nozzle plate as described in any one of claim 1-3;
Wherein, described oscillating plate is arranged on the substrate, and described nozzle plate is arranged on described oscillating plate; At least one pressure chamber is spaced between described nozzle plate and described oscillating plate; Described piezoelectric element is arranged on the oscillating plate in described pressure chamber;
Wherein, described nozzle plate arranges multiple nozzle; Wherein, described nozzle and described pressure chamber one_to_one corresponding; Public chamber is provided with between described nozzle plate and described substrate; Be provided with restricted flow passage between at least one pressure chamber described and described public chamber, wherein, the sectional area of described restricted flow passage is less than the sectional area of described pressure chamber;
Wherein, described substrate is hollow structure, and as the deformation space of described oscillating plate, and the side that described substrate deviates from described oscillating plate is bonded with cover plate;
Described piezoelectric element, comprising: bottom electrode, Thin Piezoelectric rete and top electrode;
Described silicon nitride layer is formed with titanium layer, described titanium layer is formed with described bottom electrode;
Described Thin Piezoelectric rete generates by repeatedly repeating following step:
Spin coating piezoelectrics precursor film on described bottom electrode; The crystallization of described piezoelectrics precursor film is made by sintering process.
5. device according to claim 4, is characterized in that, described multiple nozzle is dislocation arrangement.
6. device according to claim 5, is characterized in that, the material of described substrate is silicon.
7. a printing device, is characterized in that, comprises: the liquid injection apparatus according to any one of claim 4-6, defeated paper matrix block and governor circuit.
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| CN104867826A (en) * | 2015-06-04 | 2015-08-26 | 武汉新芯集成电路制造有限公司 | Method for preventing thin film at edge of silicon chip from being peeled off |
| JP2018199289A (en) * | 2017-05-29 | 2018-12-20 | セイコーエプソン株式会社 | Piezoelectric device, liquid discharge head, liquid discharge device |
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