CN103963467A - Vibrating plate, liquid jetting device and printing device - Google Patents
Vibrating plate, liquid jetting device and printing device Download PDFInfo
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- CN103963467A CN103963467A CN201410172696.6A CN201410172696A CN103963467A CN 103963467 A CN103963467 A CN 103963467A CN 201410172696 A CN201410172696 A CN 201410172696A CN 103963467 A CN103963467 A CN 103963467A
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Abstract
The embodiment of the invention provides a vibrating plate, a liquid jetting device and a printing device. The vibrating plate comprises a silicon dioxide layer and a silicon nitride layer, wherein the silicon nitride layer is arranged on the silicon dioxide layer, the stress of the silicon dioxide layer and the stress of the silicon nitride layer are counteracted so that the stress resultant of the vibrating plate can be zero, the vibrating plate is not prone to being cocked and deformed, and meanwhile the displacement variation of a piezoelectric element in the process that the piezoelectric element is repeatedly driven can be prevented from being reduced.
Description
Technical field
The embodiment of the present invention relates to fluid jetting head manufacturing technology, relates in particular to a kind of oscillating plate, liquid injection apparatus and printing device.
Background technology
In prior art, by the oscillating plate of fluid jetting head, piezoelectric element being set, and apply voltage and make oscillating plate distortion or vibrate to piezoelectric element, thereby making the fluid jetting head ejection ink droplet in printing device.Wherein, piezoelectric element generally adopts leaded piezoelectric, and facial pallor in piezoelectric element is easily diffused into the silicon dioxide layer as oscillating plate, make the melting point depression of silicon dioxide layer, therefore, fire piezoelectric on silicon dioxide layer time, the easy melted by heat of silicon dioxide layer.
In prior art, by first zirconium dioxide layer being set on the silicon dioxide layer of oscillating plate, and then on zirconium dioxide layer, piezoelectric is set, can prevents that the lead composition in piezoelectric is diffused in the silicon dioxide layer of oscillating plate.Wherein, by the substrate that is formed with zirconium layer is inserted in the thermal oxidation furnace that has been heated to 800 DEG C of-1000 DEG C of temperature and is oxidized to be more than or equal to the speed of 200mm/min, form zirconium dioxide layer, wherein, the heating rate of zirconium layer is 300 DEG C/min, annealing temperature is set at 800 DEG C, between the time period is adjusted in from 0.5h to 2h.
But, in existing oscillating plate, the generation temperature of zirconium dioxide layer is higher and annealing time is longer, when zirconium layer is subject to thermal oxide, produces and cause occurring crackle compared with large stress on zirconium dioxide layer, and zirconium dioxide layer falls zirconium dioxide pull-up because the release of thermal stress causes the distortion of oscillating plate and pressure chamber after cooling.On the other hand, in prior art, thereby silicon base is being subject to after high-temperature heating in temperature-fall period easily buckling deformation again and causing the disengaging of the thin layer of adjacent oscillating plate.
Summary of the invention
The embodiment of the present invention provides a kind of oscillating plate, liquid injection apparatus and printing device, and described oscillating plate is difficult for buckling deformation, also can prevent from reducing in the displacement variable that repeatedly drives piezoelectric element in piezoelectric element process simultaneously.
First aspect, the embodiment of the present invention provides a kind of oscillating plate, comprising: silicon dioxide layer and silicon nitride layer, described silicon nitride layer is arranged on described silicon dioxide layer;
Wherein, the stress of described silicon dioxide layer and the stress of described silicon nitride layer are cancelled out each other, so that the combined stress of described oscillating plate is zero.
In conjunction with first aspect, in the possible implementation of the first of first aspect, described silicon dioxide layer forms by plasma enhanced chemical vapor deposition PECVD method;
Described silicon nitride layer forms by described PECVD method.
In conjunction with the possible implementation of the first of first aspect or first aspect, in the possible implementation of the second of first aspect, the Young's modulus of described oscillating plate is E, and 130GPa≤E≤170GPa.
In conjunction with the possible implementation of the second of first aspect, in the third possible implementation of first aspect, the thickness of described oscillating plate is H, and 1.0um≤H≤1.5um.
Second aspect, the embodiment of the present invention provides a kind of liquid injection apparatus, comprising: substrate, oscillating plate, piezoelectric element and nozzle plate as described in arbitrary implementation in above-mentioned first aspect;
Wherein, described oscillating plate is arranged in described substrate, and described nozzle plate is arranged on described oscillating plate; Between described nozzle plate and described oscillating plate, be spaced at least one pressure chamber; Described piezoelectric element is arranged on the oscillating plate in described pressure chamber;
Wherein, on described nozzle plate, multiple nozzles are set; Wherein, described nozzle is corresponding one by one with described pressure chamber; Between described nozzle plate and described substrate, be provided with public chamber; Between described at least one pressure chamber and described public chamber, be provided with restricted flow passage, wherein, the sectional area of described restricted flow passage is less than the sectional area of described pressure chamber;
Wherein, described substrate is hollow structure, as the deformation space of described oscillating plate.
In conjunction with second aspect, in the possible implementation of the first of second aspect, described multiple nozzles are dislocation arrangement.
In conjunction with the possible implementation of the first of second aspect, in the possible implementation of the second of second aspect, the material of described substrate is silicon.
In conjunction with the possible implementation of the second of second aspect, in the third possible implementation of second aspect, described piezoelectric element, comprising: bottom electrode, Thin Piezoelectric rete and top electrode.
The third aspect, the embodiment of the present invention provides a kind of printing device, comprises: the liquid injection apparatus as described in arbitrary implementation in above-mentioned second aspect, defeated paper matrix piece and governor circuit.
The oscillating plate providing in the present invention, comprises silicon dioxide layer and silicon nitride layer, and described silicon nitride layer is arranged on described silicon dioxide layer; Wherein, the stress of described silicon dioxide layer and the stress of described silicon nitride layer are cancelled out each other, so that the combined stress of described oscillating plate is zero, thereby described oscillating plate is difficult for buckling deformation, also can prevent from reducing in the displacement variable that repeatedly drives piezoelectric element in piezoelectric element process simultaneously.
Brief description of the drawings
Fig. 1 is that to be subject to compression or tensile stress or stress be the distortion schematic diagram of 1 o'clock to oscillating plate;
Fig. 2 is the structural representation of oscillating plate of the present invention;
Fig. 3 is the structural representation that forms silicon dioxide layer in the present invention;
Fig. 4 is the structural representation that forms silicon nitride layer on the basis of structure shown in Fig. 3;
Fig. 5 A is the cross-sectional view one of liquid injection apparatus of the present invention;
Fig. 5 B is the cross-sectional view two of liquid injection apparatus of the present invention;
Fig. 6 A is the structural representation that forms bottom electrode on oscillating plate;
Fig. 6 B is the structural representation that forms Thin Piezoelectric rete on the basis of structure shown in Fig. 6 A;
Fig. 6 C is the structural representation that forms top electrode on the basis of structure shown in Fig. 6 B;
Fig. 7 is the structural representation that forms insulating protective film on the basis of structure shown in Fig. 6 C;
Fig. 8 forms the deformation space of oscillating plate and the structural representation of ink-feed channel on the basis of structure shown in Fig. 7;
Fig. 9 is the structural representation of nozzle plate of the present invention;
Figure 10 is the structural representation of liquid injection apparatus of the present invention;
Figure 11 is the plan structure schematic diagram of liquid injection apparatus of the present invention;
Figure 12 be in Figure 11 liquid injection apparatus A-B to cross-sectional view;
Figure 13 A view during away from nozzle that is liquid injection apparatus of the present invention at oscillating plate;
Figure 13 B view during near nozzle that is liquid injection apparatus of the present invention at oscillating plate;
Figure 13 C is the view of liquid injection apparatus of the present invention in the time that oscillating plate resiles;
Figure 14 is the structural representation of printing device in the embodiment of the present invention.
Detailed description of the invention
Fig. 1 is that to be subject to compression or tensile stress or stress be the distortion schematic diagram of 1 o'clock to oscillating plate.As shown in Figure 1, in the time that the internal stress of oscillating plate is tensile stress, oscillating plate can be subject to the effect of tensile stress and cause the two ends of oscillating plate higher than the buckling deformation at middle part, in the time that the internal stress of oscillating plate is zero, oscillating plate is in naturally smooth state, in the time that the internal stress of oscillating plate is compression, oscillating plate can be subject to the effect of compression and cause the middle part of oscillating plate higher than the buckling deformation at two ends.
In the process of existing manufacture shower nozzle, need high-temperature oxydation or high-temperature calcination and annealing process, simultaneously due between oscillating plate and piezoelectric element, the material different (thermal coefficient of expansion that is layers of material is different) of oscillating plate inside and the inner each layer formation of piezoelectric element, therefore, easily cause, between each layer, buckling deformation occurs.
Fig. 2 is the structural representation of oscillating plate of the present invention, and as shown in Figure 2, oscillating plate provided by the invention, comprising: silicon dioxide layer (SiO
2) and silicon nitride layer (Si
3n
4), described silicon nitride layer is arranged on described silicon dioxide layer; Wherein, the stress of described silicon dioxide layer and the stress of described silicon nitride layer are cancelled out each other, so that the combined stress of described oscillating plate is zero.
In the embodiment of the present invention, when the stress of the wherein one deck in the double-decker of described oscillating plate is tensile stress, the stress of another layer should be compression, so that described tensile stress and described compression can be cancelled out each other, thereby reduce the bending of described oscillating plate, and can effectively prevent that oscillating plate from doing reducing of used time displacement what be subject to piezoelectric element.
Fig. 3 is the structural representation that forms silicon dioxide layer in the present invention, as shown in Figure 3, in the embodiment of the present invention, in substrate 1, form silicon dioxide layer 31, the about 500nm of thickness of this silicon dioxide layer, alternatively, described silicon dioxide layer can pass through plasma enhanced chemical vapor deposition (Plasma EnhancedChemical Vapor Deposition, be called for short PECVD) method formation, concrete generation step is as follows: (1) will be cleaned as the silicon chip of substrate 1, in order in deionized water,--acetone--------deionized water-acid solution cleans in deionized water deionized water-alkaline solution deionized water-ethanol by deionized water--hydrofluoric acid (HF) solution of 5% content--, secondly dry, then the silicon base after drying is put into the reaction chamber of PECVD equipment, (2) this reaction chamber is evacuated to the vacuum of 5 × 10-3Pa, (3) this reaction chamber be heated to the depositing temperature needing as 300 DEG C and keep 30 minutes, (4) pass into reacting gas nitrous oxide (N to this reaction chamber
2and silane (SiH O)
4), and adjust flux meter is to suitable parameter, wherein, chemical equation is: SiH
4+ N
2o → SiO
2+ H
2↑+N
2↑, (5) open radio frequency power source, radio-frequency power is adjusted to the power that experiment needs, owing to can producing certain reflection power in experiment, by regulating adaptation reflection power to be adjusted to minimum, (6) starting timing to reaction finishes, (7) this reaction chamber is lowered the temperature, complete the growth of silica membrane.
In the embodiment of the present invention, in the time adopting PECVD method deposition of silica, improve the performance of film by balanced gas composition and radio-frequency power, need to be by N
2o:SiH
4flow-control in certain level, thereby it is minimum that film defects is dropped to.Wherein, the impact of depositing temperature and the radio-frequency power physics and chemistry character on silica membrane is very large, and in the time that depositing temperature raises, the density straight line of silica membrane rises, and it is fine and close that film becomes; In the time that radio-frequency power increases, gas activation efficiency improves, and reactant concentration increases, and therefore, the silica thin film structure densification of deposition, has improved the corrosion resistance of film.But radio-frequency power can not be excessive, otherwise sedimentation rate is too fast, make the uniformity decreases (as short texture, pinhold density increase) of film, passivation ability is degenerated.
In the embodiment of the present invention, utilize the preferred processing condition of PECVD equipment cvd silicon dioxide film: depositing temperature is 300 DEG C, radio-frequency power is 200W, and gas mixing ratio is N
2o:SiH
4=20:60sccm, pressure limit is 30Pa.
Further, silicon base 1 is carried out to alternating growth silica membrane under radio frequency source (high frequency frequency 13.56MHz and Frequency 100KHz), the frequency of General Definition radio frequency source is low frequency power source lower than 4MHz, is high frequency power source higher than 4MHz.Stress to silica membrane is analyzed, and list is as shown in table 1:
Table 1: the stress sheet of silica membrane
| High-frequency/low-frequency action time (s) | Total time (min) | Film thickness (nm) | Stress (GPa) |
| 0/20 | 30 | 500 | -0.39 |
| 5/15 | 30 | 500 | -0.39 |
| 10/10 | 30 | 500 | -0.40 |
| 15/5 | 30 | 500 | -0.40 |
| 20/0 | 30 | 500 | -0.41 |
Wherein, the stress of film refers to the internal stress (membrane stress) producing in film, wherein, stress σ is represented by Young's modulus of elasticity Y, strain stress and the thickness m of film, be σ=ε × Y × m, the negative sign of stress intensity represents that the stress of film is compression, otherwise is tensile stress.In the embodiment of the present invention, the action time of high and low frequency is using 20s as a change-over period, be compression by the stress of the known silica of table 1, big or small about 0.4GPa, the ratio of the action time of high and low frequency does not have too much influence to the stress intensity of silica.
In the embodiment of the present invention, because the stress of silica is compression,, for to make the combined stress of oscillating plate be zero or approach zero, therefore, the stress of silicon nitride should be tensile stress, and the stress intensity of size and silica is tending towards equal.
Fig. 4 is the structural representation that forms silicon nitride layer on the basis of structure shown in Fig. 3, as shown in Figure 4, and in the embodiment of the present invention, on silicon dioxide layer 31, form silicon nitride layer 32, the about 500nm of thickness of this silicon nitride layer, alternatively, described silicon nitride layer can form by PECVD method.Wherein, the reacting gas of formation silicon nitride is NH
3and SiH
4, wherein, SiH
4(use N
2be diluted to 12%) and NH
3gas flow ratio is between 0.1 to 4; Deposition temperature is between 200 DEG C to 400 DEG C; Reaction pressure is 30P
aleft and right.Further, pass in the above conditions after reaction source gas, series of chemical occurs, wherein, chemical equation is:
SiH
4+NH
3→Si
3N
4+H
2↑。
In the embodiment of the present invention, can, by regulating above-mentioned technological parameter, generate the silicon nitride film with different stress.Found through experiments: in the time adopting high frequency frequency as radio frequency power source, the stress of silicon nitride is tensile stress, in the time adopting Frequency as radio frequency power source, the stress of silicon nitride is compression.Alternatively, in the time need to generating stress and be the silicon nitride film of tensile stress, preferably, can adopt 100 to 300W high frequency power source, and the frequency of this high frequency power source is 13.56MH; In the time need to generating stress and be the silicon nitride film of compression, preferably, can adopt 100 to 300W low frequency power source, and the frequency in this low frequency power source is 100KHz.From analyzing above, by changing the radio frequency power source action time parameter of PECVD, just can obtain the silicon nitride film of needed tensile stress or compression.In the embodiment of the present invention, the stress value (identical with the compression size of described silica) needing in order to obtain the technical program, generate the preferred processing condition of silicon nitride film: depositing temperature is 350 DEG C, and radio-frequency power is 300W, and pressure is 30Pa.Stress to silicon nitride film is analyzed, and list is as shown in table 2:
Table 1: the stress sheet of silicon nitride film
| High-frequency/low-frequency action time (s) | Total time (min) | Film thickness (nm) | Stress (GPa) |
| 0/20 | 35 | 500 | -0.90 |
| 5/15 | 35 | 500 | -0.61 |
| 10/10 | 35 | 500 | -0.30 |
| 15/5 | 35 | 500 | 0.25 |
| 20/0 | 35 | 500 | 0.60 |
Known by table 1 and table 2, because the stress of silicon dioxide layer 31 is compression, in order to obtain the oscillating plate of zero stress, the stress of silicon nitride layer 32 should be tensile stress, therefore, in the embodiment of the present invention, high-frequency radio frequency source action time should maintain between 15-20s, corresponding low frequency radio frequency source action time maintains between 5-0s, can obtain the silicon nitride film that stress is tensile stress, thereby the tensile stress of the compression of described silicon dioxide layer and described silicon nitride layer is cancelled out each other, so that the combined stress of described oscillating plate is zero, alternatively, in actual applications, the combined stress size of described oscillating plate can be-10MPa is between 10MPa.In the embodiment of the present invention, generate in the silicon dioxide layer of oscillating plate and the process of silicon nitride layer by PECVD method, can effectively control stress types and the size of the each layer film of oscillating plate, so that the combined stress of described oscillating plate is zero.
In the embodiment of the present invention, the thickness of described silicon dioxide layer and silicon nitride layer is all 500nm, but the present invention is as limit, alternatively, and the about 500-750nm of the thickness of described silicon dioxide layer 31, the about 500-750nm of thickness of silicon nitride layer 32.Wherein, can be by controlling the thickness that decides this film total time of film growth, wherein, in the case of the conditions such as the temperature of deposit film, gas flow, pressure are certain, the total time of growth is longer, and film is thicker.Alternatively, the thickness of described oscillating plate is H, and 1.0um≤H≤1.5um.
In the embodiment of the present invention, because described oscillating plate is made up of silicon dioxide layer and silicon nitride layer, therefore, the Young's modulus of oscillating plate is determined jointly by the Young's modulus of silica layer film and silicon nitride layer film.Alternatively, the about 70GPa of Young's modulus of silica, the about 240GPa of Young's modulus of silicon nitride layer, the Young's modulus of vibrating flaggy is E, and 130GPa≤E≤170GPa, therefore, the vibration flaggy that the embodiment of the present invention provides has good elasticity, and due to the stress of silicon dioxide layer and the stress of silicon nitride layer of this oscillating plate cancel out each other (combined stress that is described oscillating plate is zero), this oscillating plate can prevent the buckling deformation causing due to the stress of self, can prevent from reducing in the displacement variable that repeatedly drives piezoelectric element in piezoelectric element process simultaneously.
The oscillating plate providing in the embodiment of the present invention, comprises silicon dioxide layer and silicon nitride layer, and described silicon nitride layer is arranged on described silicon dioxide layer; Wherein, the stress of described silicon dioxide layer and the stress of described silicon nitride layer are cancelled out each other, so that the combined stress of described oscillating plate is zero, thereby described oscillating plate is difficult for buckling deformation, therefore the thin layer of described oscillating plate can not depart from, and also can prevent from reducing in the displacement variable that repeatedly drives piezoelectric element in piezoelectric element process simultaneously.
Fig. 5 A is the cross-sectional view one of liquid injection apparatus of the present invention, the cross-sectional view two that Fig. 5 B is liquid injection apparatus of the present invention, and wherein, the cut direction of Fig. 5 A is mutually vertical with the cut direction of Fig. 5 B.As shown in Fig. 5 A and Fig. 5 B, shown in liquid injection apparatus, comprising: substrate 501, oscillating plate 502, piezoelectric element 503 and nozzle plate 504; Wherein, oscillating plate 502 can adopt the structure of oscillating plate in the above embodiment of the present invention.Wherein, oscillating plate 502 is arranged in substrate 501, and nozzle plate 504 is arranged on oscillating plate 502; Between nozzle plate 504 and oscillating plate 502, be spaced at least one pressure chamber 508; Piezoelectric element 503 is arranged on the oscillating plate 502 in each pressure chamber; Wherein, multiple nozzles 509 are set on nozzle plate 504; Wherein, nozzle 509 and pressure chamber 508 corresponding (be the corresponding nozzle of each pressure chamber, described nozzle is used for spraying ink droplet) one by one; Between described nozzle plate and described substrate, be provided with public chamber 510; Between described at least one pressure chamber and described public chamber, be provided with restricted flow passage 511, wherein, the sectional area of described restricted flow passage is less than the sectional area of described pressure chamber; Wherein, described substrate is hollow structure, as the deformation space 512 of described oscillating plate.Alternatively, described multiple nozzles are dislocation arrangement, and the material of described substrate is silicon.
In the embodiment of the present invention, piezoelectric element 503 is arranged on the oscillating plate 502 in each pressure chamber, wherein, oscillating plate 502 comprises silicon dioxide layer 5021 and silicon nitride layer 5022, and piezoelectric element 503 comprises bottom electrode 5031, Thin Piezoelectric rete 5032 and top electrode 5033.Fig. 6 A is the structural representation that forms bottom electrode on oscillating plate 502, and Fig. 6 B is the structural representation that forms Thin Piezoelectric rete on the basis of structure shown in Fig. 6 A, and Fig. 6 C is the structural representation that forms top electrode on the basis of structure shown in Fig. 6 B.As shown in Fig. 6 A-6C, in the embodiment of the present invention, on silicon nitride layer 5022, form successively bottom electrode 5031, Thin Piezoelectric rete 5032 and top electrode 5033, wherein, concrete step is as follows:
The step of step 1, the lower utmost point 5031 of formation:
As shown in Figure 6A, by sputtering method etc., platinum (Pt) or iridium (Ir) etc. are attached on silicon nitride layer 5022, the composite bed that forms platinum layer or iridium layer or platinum and iridium composition, alternatively, the thickness of described lower electrode layer can be 0.1～0.2 μ m.Alternatively, for improving the tight ness rating of bottom electrode 5031 on silicon nitride layer 5022, can be before forming bottom electrode 5031, first on silicon nitride layer 5022, form by sputtering method or vacuum plating method the titanium layer (not shown) being formed by titanium, further, on titanium layer, form bottom electrode 5031.
The step of step 2, formation Thin Piezoelectric rete 5032:
In the embodiment of the present invention, Thin Piezoelectric rete 5032 is formed by the thin-film material with piezoelectric property, the about 1.0-1.5um of thickness, and its thickness is suitable with the thickness of vibration flaggy.Preferably, Thin Piezoelectric rete 5032 can be by with lead zirconate titanate [Pb (Zr, Ti) 0
3: PZT] be the material formation of main component, also can be by the solid solution of lead magnesio-niobate and lead titanates [Pb (Mg
l/3nb
2/3) 0
3-PbTi0
3: PMN-PT], or zinc niobate is plumbous and solid solution [the Pb Zn of lead titanates
1/3nb
2/3) O
3-PbTi0
3: PZN-PT] etc. composition.
As shown in Figure 6B, by spin coating piezoelectrics precursor film on bottom electrode 5031, make the crystallization of piezoelectrics presoma by sintering, form the film crystal layer with piezo-electric effect.Wherein, by this sintering, piezoelectrics precursor film becomes rhombohedron crystal structure by non-crystalline state, changes to the film that is data-collection effect.Due to each about 70-200nm of thickness that forms piezoceramics layer, in order to form required thickness, can be by repeatedly repeating formation and the sintering process of precursor film as above.As the thickness of supposing the precursor film of sintering 1 time coating is 200nm, this technique is repeated 6 times, forming thickness is the Thin Piezoelectric rete of 1.2um.In the embodiment of the present invention, by film growth repeatedly, make later layer be subject to the crystalline orientation impact of front thin film, thereby make whole piezoelectric film 5032 have good crystalline orientation degree.
The step of step 3, formation top electrode 5033:
As shown in Figure 6 C, by sputtering method etc., platinum (Pt) or iridium (Ir) etc. are attached on Thin Piezoelectric rete 5032, form the composite bed of platinum layer or iridium layer or platinum and iridium composition, alternatively, the thickness of described Thin Piezoelectric rete 5032 can be 50～100nm.
Further, Fig. 7 is the structural representation that forms insulating protective film on the basis of structure shown in Fig. 6 C, (comprise bottom electrode at formation piezoelectric element 503, Thin Piezoelectric rete and top electrode) afterwards, as shown in Figure 7, can be on top electrode 5033 rotary coating erosion resistant, using apply erosion resistant as mask, expose, development treatment, secondly adopt the method for etching that the part of uncoated erosion resistant in piezoelectric element 503 is removed, form the shape of required piezoelectric element, then cover with the insulating protective film 5034 of the formation such as aluminium oxide or nitrogen oxide at each layer of piezoelectric element 503 and the area of the pattern of side.
Alternatively; Fig. 8 forms the deformation space of oscillating plate and the structural representation of ink-feed channel on the basis of structure shown in Fig. 7; as shown in Figure 8; in the embodiment of the present invention, forming after oscillating plate 502 and piezoelectric element 503 and after diaphragm 5034, on the silicon nitride layer 5022 of oscillating plate 502, apply erosion resistant; then expose, development, etching processing; thereby in substrate 1, form deformation space 512 and ink-feed channel, wherein, described ink-feed channel 513 and public chamber 510 UNICOMs.
Further, a side that need to deviate from deformation space 512 at oscillating plate 502 forms multiple pressure chamber, the nozzle bore corresponding with described multiple pressure chamber, and the public chamber being communicated with described multiple pressure chamber, forms the nozzle plate 504 in corresponding diagram 5.
Alternatively, Fig. 9 is the structural representation of nozzle plate of the present invention, as shown in Figure 9, first in the second substrate, apply crosslinkable polymeric material, as the epoxy resin of Photoimageable (photoresist SU8 etc.), light sensitivity silicones or light sensitivity epoxysilicone etc., expose using described polymeric material as mask, development treatment, and etch away part material, thereby form the shapes such as nozzle 509, pressure chamber 508, public chamber 510, alternatively, the material in described the second base can be lucite.
Figure 10 is the structural representation of liquid injection apparatus of the present invention.Alternatively, nozzle plate 504 is bonded in to the side that oscillating plate 502 deviates from substrate 501, as shown in figure 10, mineralization pressure chamber 508, public chamber 510 and nozzle 509, wherein, between each pressure chamber 508 and public chamber 510, be also provided with restricted flow passage 511, the sectional area of restricted flow passage 511 is less than the sectional area of pressure chamber 508.Alternatively, a side that deviates from oscillating plate 502 in substrate 501 is also bonded with cover plate 514, to increase the mechanical strength of substrate 501.
Figure 11 is the plan structure schematic diagram of liquid injection apparatus of the present invention, as shown in figure 11, in the liquid injection apparatus of the embodiment of the present invention, nozzle 509 is dislocation arrangement, and alternatively, with CD direction, the first half of this liquid injection apparatus is carried out to structural representation after subdivision as shown in figure 10.
Figure 12 be in Figure 11 liquid injection apparatus A-B to cross-sectional view, as shown in figure 12, the liquid injection apparatus of the embodiment of the present invention comprises multiple pressure chamber 508, the corresponding nozzle 509 of each pressure chamber, a piezoelectric element 503 is set on the oscillating plate 502 in each pressure chamber 508, wherein, public chamber is communicated with each pressure chamber.Alternatively, in the time that arbitrary piezoelectric element 503 is received voltage signal, can give the larger stress of oscillating plate 502, make oscillating plate 502 that deformation occur, thereby by distortion, the ink in each pressure chamber 508 be extruded by nozzle 509.
Figure 13 A view during away from nozzle that is liquid injection apparatus of the present invention at oscillating plate, Figure 13 B view during near nozzle that is liquid injection apparatus of the present invention at oscillating plate, Figure 13 C is the view of liquid injection apparatus of the present invention in the time that oscillating plate resiles.
As shown in FIG. 13A, when piezoelectric element 503 receives after voltage signal, the distortion meeting of this piezoelectric element moment is to the larger stress of oscillating plate 502, oscillating plate 502 can be to moving away from the direction of nozzle 509 together with piezoelectric element 503, be that oscillating plate 502 can be recessed to deformation space 512, form " drawing " this process, the liquid level Ao Yehuixiang pressure chamber 508 at nozzle 509 places simultaneously, forms " meniscus ".Wherein, in the process of " drawing " for the first time (oscillating plate 502 be out of shape and away from nozzle 509), the size of this oscillating plate distortion is proportional to the size of nozzle ejection drop.
As shown in Figure 13 B, when piezoelectric element 503 being applied with the contrary voltage signal of " drawing " pattern, oscillating plate 502 can move to the direction near nozzle 509 together with piezoelectric element 503, thereby the ink in pressure chamber 508 is pushed to nozzle 509 places, and ink is discharged from nozzle 509, form " pushing away " this process.Alternatively, in this course, ink is outside meeting is flowed to nozzle 509, also have part ink to flow to public chamber 510 by restricted flow passage 511, produce the ink refluxing, but due to the existence of restricted flow passage 511, to reduce to the mobile ink of public chamber 510 by restricted flow passage 511, thereby there is more ink to flow out from nozzle 509, the loss refluxing to reduce ink, and then reduced the time that ink is filled again, also shorten the injection cycle of ink droplet, thereby improved print frequency.In addition, owing to there being more ink to flow out from nozzle 509, the vibration displacement that can reduce piezoelectric element 503 also can reach the ink droplet of the corresponding size of ejection simultaneously, thereby the life-span of improving piezoelectric element 503 makes printhead durable more.
As shown in Figure 13 C, complete after " pushing away " this process, when piezoelectric element 503 being applied when " drawing " for the first time the identical voltage signal of process, oscillating plate 502 will resile, and a part of ink is to the interior movement of each pressure chamber 508, a part of ink is because inertia continues to move to nozzle 509 places in addition, thereby the ink that is squeezed in nozzle 509 outsides is broken, formed ink droplet, wherein, ink droplet, because effect of inertia can be ejected on print media, completes the course of injection of single ink droplet.Alternatively, the course of injection of multiple ink droplets is identical with the course of injection of above-mentioned single ink droplet, and the embodiment of the present invention does not repeat them here.
Liquid injection apparatus in the embodiment of the present invention, comprising: substrate, oscillating plate, piezoelectric element and nozzle plate; Wherein, the vibration board structure schematic diagram that described oscillating plate can adopt the above embodiment of the present invention to provide, described oscillating plate is arranged in described substrate, and described nozzle plate is arranged on described oscillating plate; Between described nozzle plate and described oscillating plate, be spaced at least one pressure chamber; Described piezoelectric element is arranged on the oscillating plate in described pressure chamber; Wherein, on described nozzle plate, multiple nozzles are set; Wherein, described nozzle is corresponding one by one with described pressure chamber; Between described nozzle plate and described substrate, be provided with public chamber; Between described at least one pressure chamber and described public chamber, be provided with restricted flow passage, wherein, the sectional area of described restricted flow passage is less than the sectional area of described pressure chamber; Wherein, described substrate is hollow structure, as the deformation space of described oscillating plate.In the liquid injection apparatus that the embodiment of the present invention provides, the combined stress of oscillating plate is zero, thereby described oscillating plate is difficult for buckling deformation, also be can not depart between the thin layer of described oscillating plate, also can prevent from reducing at the variable quantity that repeatedly drives the displacement of piezoelectric element in piezoelectric element process simultaneously, therefore, the liquid injection apparatus of embodiment of the present invention durable more.
Figure 14 is the structural representation of printing device in the embodiment of the present invention, and as shown in figure 14, the printing device 140 that the present embodiment provides, comprising: liquid injection apparatus 1401, defeated paper matrix piece 1402 and governor circuit 1403.Wherein, liquid injection apparatus 1401 can adopt the structural representation of liquid injection apparatus in the above embodiment of the present invention, and it realizes principle and technique effect is similar, repeats no more herein.
Finally it should be noted that: above each embodiment, only in order to technical scheme of the present invention to be described, is not intended to limit; Although the present invention is had been described in detail with reference to aforementioned each embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or some or all of technical characterictic is wherein equal to replacement; And these amendments or replacement do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (9)
1. an oscillating plate, is characterized in that, comprising: silicon dioxide layer and silicon nitride layer, and described silicon nitride layer is arranged on described silicon dioxide layer;
Wherein, the stress of described silicon dioxide layer and the stress of described silicon nitride layer are cancelled out each other, so that the combined stress of described oscillating plate is zero.
2. oscillating plate according to claim 1, is characterized in that, described silicon dioxide layer forms by plasma enhanced chemical vapor deposition PECVD method;
Described silicon nitride layer forms by described PECVD method.
3. oscillating plate according to claim 1 and 2, is characterized in that, the Young's modulus of described oscillating plate is E, and 130GPa≤E≤170GPa.
4. oscillating plate according to claim 3, is characterized in that, the thickness of described oscillating plate is H, and 1.0um≤H≤1.5um.
5. a liquid injection apparatus, is characterized in that, comprising: substrate, oscillating plate, piezoelectric element and nozzle plate as described in claim 1-4 any one;
Wherein, described oscillating plate is arranged in described substrate, and described nozzle plate is arranged on described oscillating plate; Between described nozzle plate and described oscillating plate, be spaced at least one pressure chamber; Described piezoelectric element is arranged on the oscillating plate in described pressure chamber;
Wherein, on described nozzle plate, multiple nozzles are set; Wherein, described nozzle is corresponding one by one with described pressure chamber; Between described nozzle plate and described substrate, be provided with public chamber; Between described at least one pressure chamber and described public chamber, be provided with restricted flow passage, wherein, the sectional area of described restricted flow passage is less than the sectional area of described pressure chamber;
Wherein, described substrate is hollow structure, as the deformation space of described oscillating plate.
6. device according to claim 5, is characterized in that, described multiple nozzles are dislocation arrangement.
7. device according to claim 6, is characterized in that, the material of described substrate is silicon.
8. device according to claim 7, is characterized in that, described piezoelectric element, comprising: bottom electrode, Thin Piezoelectric rete and top electrode.
9. a printing device, is characterized in that, comprises: the liquid injection apparatus as described in any one in claim 5-8, defeated paper matrix piece and governor circuit.
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| CN201410172696.6A CN103963467B (en) | 2014-04-25 | 2014-04-25 | Oscillating plate, liquid injection apparatus and printing device |
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| CN103963467B (en) | 2015-12-09 |
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