CN103943924B - A kind of microwave attenuator based on novel topological structure - Google Patents

A kind of microwave attenuator based on novel topological structure Download PDF

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Publication number
CN103943924B
CN103943924B CN201410178588.XA CN201410178588A CN103943924B CN 103943924 B CN103943924 B CN 103943924B CN 201410178588 A CN201410178588 A CN 201410178588A CN 103943924 B CN103943924 B CN 103943924B
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resistance
absorbing structure
periodicity
microstrip line
band
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CN103943924A (en
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李斌
赵慧敏
张波
徐辉
王毅
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Xian Institute of Space Radio Technology
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Xian Institute of Space Radio Technology
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Abstract

A kind of microwave attenuator based on novel topological structure, comprise some periodically absorbing structure, sheet resistance, coupling microstrip lines, wherein each periodicity absorbing structure comprises low resistance microstrip line and resistance, without the need to ground connection of punching, achieve the even absorption to High power microwavs signal energy, the value of each frequency microwave signal attenuation in bandwidth of operation is identical, the reflected signal of optional frequency in bandwidth can be down to pole low-level, it is achieved matched well simultaneously. The present invention, compared with conventional films resistance losser, significantly improves applying frequency, improves standing wave in band, and in band, Flatness is very excellent, and without the need to punching, technique realizes being more prone to.

Description

A kind of microwave attenuator based on novel topological structure
Technical field
The present invention relates to the topological framework of a kind of microwave attenuator, and it is specifically related to a kind of micro-band losser comprising some periodicity absorbing structures, sheet resistance, 50 ohm characteristic impedance microstrip lines, belong to microwave designing field.
Background technology
Losser is the common components in Microwave radio frequency system. Losser based on two dimensional structure is a kind of common circuit form in attenuator circuit, comprises Pi type losser and T-shaped losser two kinds, is usually operated at below X frequency range. But along with the fast development of industry and the continuous progress of science and technology such as communication, remote sensing, navigation, the operating frequency of Microwave radio frequency system improves constantly, the millimeter wave frequency band microwave system that Ka frequency range is even higher has started application.
At higher frequencies, as, under Ka wave band, conventional P i type losser and T-shaped losser have following problem: the impact such as micro-band of resistance self parasitic parameter, contact resistance is relatively big, causes losser standing wave poor, needing to carry out Match circuits, the deviation of pad value distance Theoretical Calculation is big again; Pad value is with frequency ramps, even if having carried out Match circuits, in band, Flatness is still poor; It is necessary to have resistance to ground, ground connection therefore must be had to cross hole, and losser performance that ground connection is crossed hole is very responsive to the distance of resistance, cause technique to realize complicated. Therefore how to improve sheet resistance attenuator application frequency, improve standing wave in its band, optimize Flatness in its band, just become the key issue of design plane losser.
Summary of the invention
The technology of the present invention is dealt with problems and is: for the deficiencies in the prior art, provide a kind of micro-band losser based on novel topological structure, can significantly improve applying frequency, achieve the even absorption to High power microwavs signal energy, the value of each frequency microwave signal attenuation in bandwidth of operation is identical, the reflected signal of optional frequency in bandwidth can be down to pole low-level, it is achieved that matched well simultaneously.
The technical solution of the present invention is:
Based on a microwave attenuator for novel topological structure, comprising some grades of periodically absorbing structure, sheet resistance, coupling microstrip lines, described periodicity absorbing structure comprises low resistance microstrip line and resistance;
Periodicity absorbing structure described in low resistance microstrip line composition in series with a resistor;
Coupling microstrip line is connected with the resistance of first step periodicity absorbing structure, the first step is to last step periodically cascade between two between absorbing structure, last step is absorbing structure low resistance microstrip line connection sheet resistance periodically, and sheet resistance connects described intrinsic impedance microstrip line again; The described micro-band end being cascaded as previous stage periodicity absorbing structure connects the resistance terminal of rear stage periodicity absorbing structure.
Described some grades periodically absorbing structure is completely identical.
Low resistance microstrip line electrical length in described periodicity absorbing structure is 1/4th of bandwidth of operation mid-frequency corresponding wavelength.
Resistance in described periodicity absorbing structure is identical with described sheet resistance resistance.
The width of described sheet resistance is identical with coupling micro belt line width.
Described coupling microstrip line is 50 ohm characteristic impedance coupling microstrip lines.
The present invention compared with prior art tool have the following advantages:
(1) micro-band losser of the present invention is compared with T-shaped losser with traditional Pi type losser, and applying frequency can be expanded to Ka frequency range even millimeter wave frequency band, and stationary wave characteristic at high frequencies is excellent, and reflected signal is very little. The micro-band losser of tradition due to sheet resistance self electrical length, contact resistance micro-band, ground crossed hole etc. affect bigger at high frequencies, cause traditional micro-band losser standing wave poor, the deviation of distance Theoretical Calculation is big, must again carry out designing impedance matching, and the periodicity absorbing structure parasitic parameter that the present invention adopts few, consider the factor such as coupling connecting microstrip line, can apply at high frequencies, and very excellent standing wave index can be obtained.
(2) micro-band losser of the present invention is compared with traditional micro-band losser, in the band of pad value, Flatness is excellent at high frequencies, even if the micro-band losser of tradition is through Match circuits, under working in high frequency, its pad value tilts with frequency, and in band, flatness index makes it be difficult to be applied to broadband system; Adopt the present invention can obtain flatness index in excellent band at high frequencies.
(3) micro-band losser of the present invention is compared with traditional micro-band losser, and technique realizes simpler. The micro-band losser of tradition is it is necessary to have resistance ground connection, so needing the hole excessively processing ground connection, but on microwave-medium substrate, realized hole need the restriction being subject to many processing condition, such as aperture can not be too little, hole and other circuit distances to be met and be greater than certain numerical value etc., and these numerical value are limited to the different technology conditions of different media substrate. Adopting the present invention not need resistance ground connection, therefore avoid ground connection and cross hole, technique realizes also simpler.
Accompanying drawing explanation
Fig. 1 is microwave circuit topological framework schematic diagram of the present invention;
Fig. 2 is that the T-shaped micro-band film losser of tradition at the reflection loss of 20GHz and inserts loss figure;
Fig. 3 be the present invention when adopting two-stage periodic structure at the reflection loss of 20GHz and insertion loss figure;
Fig. 4 be the present invention when adopting first-order cycle structure at the reflection loss of 30GHz and insertion loss figure.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.
As shown in Figure 1, a kind of micro-band based on novel topological structure of the present invention, comprises some grades of periodically absorbing structure A1��An, sheet resistance Rn+1, coupling microstrip line Z0, some grades of periodicity absorbing structure A1��AnComprise low resistance microstrip line L1��LnWith resistance R1��Rn, coupling microstrip line Z0It is 50 ohm characteristic impedance coupling microstrip lines.
Low resistance microstrip line (L1��Ln) and resistance (R1��Rn) it is composed in series described periodicity absorbing structure A1��An��
Coupling microstrip line Z0With the first step periodically absorbing structure A1Resistance series connection, the first step to the n-th grade is cascade between two between absorbing structure periodically, and the low resistance microstrip line of n-th grade of periodically absorbing structure connects sheet resistance Rn+1, sheet resistance Rn+1Connection features impedance micro-strip Z again0; The micro-band end being cascaded as previous stage periodicity absorbing structure between two connects the resistance terminal of rear stage periodicity absorbing structure.
The periodically low resistance microstrip line L in absorbing structure1��LnElectrical length is 1/4th of bandwidth of operation mid-frequency corresponding wavelength.
The periodically resistance R in absorbing structure1��RnWith sheet resistance Rn+1Resistance is identical.
Sheet resistance Rn+1Width and intrinsic impedance microstrip line Z0Width is identical.
Periodically the low-resistance microstrip line electrical length in absorbing structure is the quarter wave corresponding to bandwidth of operation mid-frequency.
Assuming that circuit is made up of n periodicity absorbing structure, in each periodicity absorbing structure, resistance is R, and the intrinsic impedance of low resistance microstrip line is Z, and required port Impedance is Zp(being generally 50 ohm). Circuit input resistance Z can be calculated according to R and ZL, equation can be obtained by coupling requirement: Z=ZL, such that it is able to obtain calculating the formula of Z and R.
Assuming that the pad value Att of losser is known, for n=1 and n=2, the intrinsic impedance Z of resistance R and quarter wave microstrip line can be solved by following formula:
During n=1,
R = 1 - 10 - A t t 10 1 + 10 - A t t 10 · Z p
Z = Z P 2 - R 2
During n=2,
R = 1 - 10 - A t t 10 1 + 10 - A t t 10 · Z P
Z = 1 2 ( Z P 2 - R 2 )
The losser designed with this and emulation result thereof are as shown in accompanying drawing 3,4. Accompanying drawing 3 is the 4dB losser of the n=2 of 9-24GHz, and its resistance is 11.3 ohm, the long 1.56mm of low-resistance microstrip line line, and size is about 3mm �� 3.8mm, and its reflection loss is all better than-20dB. Accompanying drawing 4 is the 4dB losser of the n=2 of 20-50GHz, and its resistance is 11.3 ohm, the long 0.6mm of low resistance microstrip line line, and size is about 2mm �� 2mm, and its reflection loss is all better than-20dB.
Contrast with the traditional micro-band losser shown in accompanying drawing 2, band internal reflection loss is optimized to more than-20dB by-12dB, in band, by originally tilting, about 1.5dB was improved to about 0.1dB to Flatness, and its applying frequency also brings up to 50GHz, it can be seen that, the present invention is compared with conventional films resistance losser, improve applying frequency, improve standing wave in band, solve pad value, and having simplicity of design, technique realizes being easy to advantage.
The content not being described in detail in specification sheets of the present invention belongs to the known technology of those skilled in the art.

Claims (3)

1. the microwave attenuator based on novel topological structure, it is characterised in that comprising: some grades of periodicity absorbing structure, sheet resistance, coupling microstrip lines, described periodicity absorbing structure comprises low resistance microstrip line and resistance;
Periodicity absorbing structure described in low resistance microstrip line composition in series with a resistor;
Coupling microstrip line is connected with the resistance of first step periodicity absorbing structure, the first step is to last step periodically cascade between two between absorbing structure, last step is absorbing structure low resistance microstrip line connection sheet resistance periodically, and sheet resistance is connection features impedance micro-strip again; The described micro-band end being cascaded as previous stage periodicity absorbing structure connects the resistance terminal of rear stage periodicity absorbing structure;
Described some grades periodically absorbing structure is completely identical;
Low resistance microstrip line electrical length in described periodicity absorbing structure is 1/4th of bandwidth of operation mid-frequency corresponding wavelength;
Resistance in described periodicity absorbing structure is identical with described sheet resistance resistance.
2. a kind of microwave attenuator based on novel topological structure according to claim 1, it is characterised in that: the width of described sheet resistance is identical with coupling micro belt line width.
3. a kind of microwave attenuator based on novel topological structure according to claim 1, it is characterised in that: described coupling microstrip line is 50 ohm characteristic impedance coupling microstrip lines.
CN201410178588.XA 2014-04-29 2014-04-29 A kind of microwave attenuator based on novel topological structure Active CN103943924B (en)

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JP6719991B2 (en) * 2016-06-27 2020-07-08 アンリツ株式会社 Distributor and signal generation system using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101916900A (en) * 2010-07-30 2010-12-15 合肥佰特微波技术有限公司 Pellet resistor with multi-cascade attenuator circuit
TW201228089A (en) * 2010-12-16 2012-07-01 Nat Applied Res Laboratories Attenuator

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Publication number Priority date Publication date Assignee Title
US7119632B2 (en) * 2004-08-05 2006-10-10 Smiths Interconnect Microwave Components, Inc. High-frequency temperature-variable attenuator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101916900A (en) * 2010-07-30 2010-12-15 合肥佰特微波技术有限公司 Pellet resistor with multi-cascade attenuator circuit
TW201228089A (en) * 2010-12-16 2012-07-01 Nat Applied Res Laboratories Attenuator

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