CN103943645A - Image sensor module and formation method thereof - Google Patents

Abstract

The invention provides an image sensor module and a formation method thereof, wherein the image sensor module comprises a substrate which is provided with a frontage and a back opposite to the frontage, a buffer layer located on the frontage of the substrate and a metal layer located on the surface of the buffer layer, a die inverted above the substrate, a welding projection located on the surface of the metal layer, and a formed lens assembly, wherein the die is provided with an image sensing region and a bonding pad surrounding the image sensing region, and the bonding pad is electrically connected with the metal layer; the lens assembly comprises a mirror base and a lens, and the lens is connected with the back of the substrate by virtue of the mirror base. The performance and the reliability of the image sensor module are improved.

Description

Image sensor module and forming method thereof

Technical field

The present invention relates to semiconductor packaging, particularly a kind of image sensor module and forming method thereof.

Background technology

Image sensor dice is a kind of chip that can experience extraneous light and convert thereof into the signal of telecommunication.After image sensor dice completes, then by image sensor dice is carried out to a series of packaging technologies, thereby form packaged image sensor, for the various electronic equipments such as digital camera, Digital Video etc.

Traditional image sensor package method normally adopts Bonding (Wire Bonding) to encapsulate, but along with the develop rapidly of integrated circuit, longer lead-in wire makes product size cannot reach desirable requirement, therefore, wafer-level packaging (WLP:Wafer Level Package) replaces wire bond package gradually becomes a kind of comparatively conventional method for packing.

Image sensor module is on the basis of image sensor package, after installation camera lens module, forms, and camera lens module comprises microscope base, filter glass and eyeglass.

Fig. 1 is a kind of image sensor module, comprising: substrate 101; Be positioned at the embankment structure 102 on substrate 101 surfaces; The crystal grain 100 of upside-down mounting above substrate 101, crystal grain 100 fronts have video sensing district 103 and the pad 104 around described video sensing district 103, and described pad 102 upper surfaces contact with embankment structure 102 surfaces; Be positioned at the through hole of described crystal grain 100, described through hole exposes pad 102 lower surfaces; Be positioned at the protective layer 105 at through-hole side wall and crystal grain 100 back sides, and expose pad 102 lower surfaces of via bottoms; Be positioned at the metal redistribution layer 106 at through-hole side wall and crystal grain 100 back sides; Be positioned at the insulating barrier 107 on described metal redistribution layer surface; Be positioned at the opening of described insulating barrier 107, and described opening exposes metal redistribution layer 106; Be positioned at the solder-bump 108 of described opening; Be positioned at the camera lens module at substrate 101 back sides, camera lens module comprises microscope base 110, eyeglass 111 and filter glass 112, wherein, microscope base 110 is positioned at substrate 101 back sides, eyeglass 111 is by interfixing between microscope base 110 and substrate 101, and the position of eyeglass 111 is corresponding to the position in video sensing district 103, and microscope base 110 madial walls have around described microscope base 110 concentric shafts annular grooves, and described card is assigned in the annular groove of described microscope base 110 madial walls.

But the performance of the above-mentioned image sensor module providing needs further to be improved.

Summary of the invention

The problem that the present invention solves is how further to improve the performance of image sensor module.

For addressing the above problem, the invention provides a kind of image sensor module, comprising: substrate, described substrate has front and the back side with described vis-a-vis; Be positioned at the resilient coating of described substrate front surface and be positioned at the metal level of buffer-layer surface; The crystal grain of upside-down mounting above substrate, described crystal grain has video sensing district and the pad around described video sensing district, and described pad and metal level electrical connection; Be positioned at the solder-bump of described layer on surface of metal; Lens assembly, described lens assembly comprises microscope base and eyeglass, wherein, described eyeglass is connected with described backside of substrate by microscope base.

Optionally, the material of described substrate is unorganic glass or polymethyl methacrylate.

Optionally, also comprise: filter glass, described filter glass card is assigned on microscope base.

Optionally, described substrate front surface or the back side are formed with filter coating.

Optionally, described filter coating is IR coating or AR coating.

Optionally, also comprise: support portion, interfixes eyeglass and microscope base by described support portion.

Optionally, described support portion lateral wall has external screw thread, and described microscope base madial wall has internal thread, and described support portion and described microscope base are screwed togather and interfixed by screw thread.

Optionally, also comprise: be covered in metal layer by layer and the plastic packaging layer of grain surface; Be positioned at the through hole of plastic packaging layer, described via bottoms exposes layer on surface of metal, and the full described through hole of solder-bump filling, and solder-bump top is higher than plastic packaging layer surface.

Optionally, described solder-bump top to the distance on plastic packaging layer surface is 20 μ m to 100 μ m.

Optionally, described plastic packaging layer is covered in metal level sidewall surfaces.

Optionally, also comprise: metal coupling, metal coupling, between pad and metal level, connects described pad and metal level by described metal coupling.

Optionally, also comprise: the some glue-line that is covered in crystal grain sidewall surfaces and metal coupling sidewall surfaces.

Optionally, described metal level sidewall flushes with base side wall.

Accordingly, the present invention also provides a kind of formation method of image sensor module, comprising: some single crystal grain is provided, and described crystal grain has video sensing district and the pad around described video sensing district; Substrate is provided, and described substrate comprises some functional areas and the Cutting Road region between adjacent functional district, and surface, described substrate functional areas is formed with resilient coating and is positioned at the metal level of buffer-layer surface; Described crystal grain upside-down mounting is placed in to the top of substrate functional areas, and described pad and metal level electrical connection; Form solder-bump at described layer on surface of metal; Cut described substrate along described Cutting Road region, form some single encapsulating structures; Before or after the described substrate of cutting, form described lens assembly, described lens assembly comprises microscope base and eyeglass, wherein, described eyeglass is connected with backside of substrate by microscope base.

Optionally, the material of described substrate is unorganic glass or polymethyl methacrylate.

Optionally, also comprise step: on described microscope base, form filter glass.

Optionally, form filter coating in described substrate front surface or the back side.

Optionally, described filter coating is IR coating or AR coating.

Optionally, adopt spraying or spin coating proceeding to form described filter coating.

Optionally, also comprise step: form support portion, by described support portion, eyeglass and microscope base are interfixed.

Optionally, the lateral wall of described support portion has external screw thread, and the madial wall of described microscope base has internal thread, and described support portion and described microscope base interfix by screw thread screw-in version.

Optionally, the material of described resilient coating is organic polymer photoresist; The material of described metal level is Cu, Al, W, Sn, Au or Sn-Au alloy.

Optionally, before forming solder-bump, also comprise step: form the plastic packaging layer that is covered in described metal level and grain surface; In described plastic packaging layer, form through hole, described via bottoms exposes layer on surface of metal; Form the solder-bump of filling full described through hole, and described solder-bump top is higher than plastic packaging layer surface.

Optionally, described solder-bump top to the distance on plastic packaging layer surface is 20 μ m to 100 μ m.

Optionally, described plastic packaging layer is covered in the metal level sidewall surfaces of same functional areas.

Optionally, also comprise step: form metal coupling in described bond pad surface or layer on surface of metal, described pad and metal level are electrically connected by metal coupling.

Optionally, the material of described metal coupling is tin, gold or ashbury metal.

Optionally, before forming solder-bump, also comprise step: form the some glue-line that is covered in described crystal grain sidewall surfaces and metal coupling sidewall surfaces.

Compared with prior art, technical scheme of the present invention has the following advantages:

The embodiment of the present invention provides the image sensor module that a kind of structural behaviour is superior, comprises, and substrate, described substrate has front and the back side with described vis-a-vis; Be positioned at the resilient coating of described substrate front surface and be positioned at the metal level of buffer-layer surface; The crystal grain of upside-down mounting above substrate, described crystal grain has video sensing district and the pad around described video sensing district, and described pad and metal level electrical connection; Be positioned at the solder-bump of described layer on surface of metal; Form lens assembly, described lens assembly comprises microscope base and eyeglass, and wherein, described eyeglass is connected with described backside of substrate by microscope base.In the image sensor module that the embodiment of the present invention provides, be provided with solder-bump at layer on surface of metal, be connected with metal level by solder-bump, image sensor module is electrically connected with external circuit,, avoid arranging through hole and avoid in crystal grain or grain surface formation solder-bump in crystal grain, reduce damage and pollution that crystal grain is subject to, superior performance, the reliability of the image sensor module that therefore, the embodiment of the present invention provides are high.

Further, while moving eyeglass to close backside of substrate direction, described eyeglass can be very close filter coating surface, and be formed with filter coating at described backside of substrate in the embodiment of the present invention, therefore the close backside of substrate that described eyeglass can be very, makes the thinner thickness of image sensor module provided by the invention.

Further, also comprise support portion, the lateral wall of described support portion has external screw thread, the madial wall of microscope base has internal thread, the mode that described support portion and microscope base screw togather by screw thread interfixes, therefore, and by rotating described support portion, can regulate the position of eyeglass, to meet the different demands of image sensor module.

Further, solder-bump is filled full described through hole, and the top of described solder-bump is higher than plastic packaging layer surface, solder-bump top to the distance on plastic packaging layer surface is 20 μ m to 100 μ m, therefore the most of sidewall surfaces of described solder-bump is enveloped by plastic packaging layer, reduce solder-bump and be exposed to the area in external environment, thereby reduced the possibility that solder-bump is caused oxidation or pollutes by external environment, improved stability and the reliability of image sensor module; And, because solder-bump top is very little to the distance on plastic packaging layer surface, be 20 μ m to 100 μ m, therefore further reduce the thickness of image sensor module.

The embodiment of the present invention provides a kind of formation method of image sensor module, and packaging technology is simple, and some single crystal grain is provided; Substrate is provided, and surface, described substrate functional areas is formed with resilient coating and is positioned at the metal level of buffer-layer surface; Described crystal grain upside-down mounting is placed in to the top of substrate, and described pad is connected with metal level; Form solder-bump at layer on surface of metal; Cut described substrate along described Cutting Road region, form some single encapsulating structures; Before or after cutting substrate, form lens assembly at backside of substrate, described lens assembly comprises eyeglass and microscope base.The present invention is by forming the metal level being connected with pad at substrate surface, form solder-bump at layer on surface of metal, by described solder-bump, image sensor module is electrically connected with external circuit, therefore, embodiment of the present invention packaging technology is simple, and it is little to act on the encapsulation procedure of crystal grain, makes crystal grain keep preferably performance, thereby the encapsulation yield that improves the image sensor module forming, encapsulation performance and reliability effectively improve.

Further, the embodiment of the present invention forms filter coating at backside of substrate, and because described eyeglass can be arranged on very the position near filter coating, and close the backside of substrate that therefore described eyeglass can be very makes the thickness of image sensor module of formation less.

Simultaneously, because the embodiment of the present invention is forming the manufacturing process carrying out on the basis of some single crystal grain, compared with the wafer scale manufacturing process of prior art, the process conditions milder of the manufacturing process in the embodiment of the present invention, therefore, after manufacturing process in experience the present embodiment, filter coating still can keep higher yield, thereby improves the yield of the image sensor module forming.

Further, and because solder-bump top is very little to the distance on plastic packaging layer surface, be 20 μ m to 100 μ m, therefore the solder-bump sidewall surfaces forming is almost all covered by plastic packaging layer, reduce solder-bump and be exposed to the area in external environment, thereby reduce greatly the possibility that solder-bump is oxidized or damages by external environment, effectively improved the reliability and stability of image sensor module; Meanwhile, because solder-bump top is very little to the distance on plastic packaging layer surface, therefore further reduced the integral thickness of image sensor module.

Further, the embodiment of the present invention also forms support portion, the lateral wall of described support portion has external screw thread, the madial wall of microscope base has internal thread, the mode that described support portion and microscope base screw togather by screw thread interfixes, therefore, and by rotating described support portion, can regulate the position of eyeglass, to meet the different demands of image sensor module.

Brief description of the drawings

Fig. 1 is the structural representation of prior art image sensor module;

Fig. 2 to Figure 13 is the structural representation of one embodiment of the invention image sensor module forming process;

Figure 14 to Figure 16 is the structural representation of another embodiment of the present invention image sensor module forming process.

Embodiment

From background technology, the encapsulation performance of the image sensor module that prior art forms and reliability need further to be improved, and technique is comparatively complicated, and packaging cost is higher.

Find after deliberation, the reason that the encapsulation performance of image sensor module and reliability have much room for improvement is:

The packaging technology that forms aforementioned image sensor module is very complicated, and crystal grain cuts and forms after a series of packaging technologies by wafer to be wrapped (image sensor dice to be packaged) is carried out; Wafer to be wrapped experience attenuate, etching form through hole, form protective layer, form metal level, form the multiple tracks encapsulation procedures such as insulating barrier; described encapsulation procedure causes harmful effect to the performance of wafer to be wrapped; therefore the poor-performing that cuts the crystal grain of wafer to be wrapped formation, causes the image sensor module performance of formation to be difficult to reach optimum state.

And, carrying out further research for image sensor module and find, the thickness of image sensor module also needs further to be reduced.This be due to:

On the one hand, form through hole, form the multiple tracks encapsulation procedures such as metal level because wafer to be wrapped need to experience etching, described wafer to be wrapped must have higher mechanical strength, prevents that wafer to be wrapped from breaking in described encapsulation procedure process; For ensureing the mechanical strength of wafer to be wrapped, wafer to be wrapped need to keep thicker thickness, and the crystal grain that cutting wafer to be wrapped forms also has thicker thickness, thereby causes the thickness of the image sensor module forming partially thick.

On the other hand, because the process conditions of wafer-level packaging technique are comparatively harsh, if formed filter at backside of substrate before cutting wafer to be wrapped, after experience packaging technology, the yield of filter can reduce, and therefore conventionally after cutting wafer to be wrapped, filter is set.And after cutting wafer to be wrapped, filter conventionally card is assigned on microscope base, so that microscope base and filter are arranged on backside of substrate simultaneously, to improve packaging efficiency, therefore can have certain distance between filter and substrate; In the time moving eyeglass to close backside of substrate direction, due to the existence of filter between eyeglass and backside of substrate, eyeglass reaches behind position, filter surface the basad back side again and moves, make to have certain distance between eyeglass and backside of substrate, this is also to cause one of reason that image sensor module thickness is thicker.

For this reason, the invention provides a kind of image sensor module, comprising: substrate, described substrate has front and the back side with described vis-a-vis; Be positioned at the resilient coating of described substrate front surface and be positioned at the metal level of buffer-layer surface; The crystal grain of upside-down mounting above substrate, described crystal grain has video sensing district and the pad around described video sensing district, and described pad and metal level electrical connection; Be positioned at the solder-bump of described layer on surface of metal; Lens assembly, described lens assembly comprises microscope base and eyeglass, wherein, described eyeglass is connected with described backside of substrate by microscope base.It is few that the present invention acts on encapsulation procedure on crystal grain, thereby improve encapsulation performance and the reliability of the image sensor module forming.

For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, specific embodiments of the invention are described in detail.

Fig. 2 to Figure 13 is the structural representation of one embodiment of the invention image sensor module forming process.

Please refer to Fig. 2, wafer to be wrapped 200 is provided, described wafer to be wrapped 200 have first surface with relative with described first surface second, the first surface of described wafer to be wrapped 200 is formed with some video sensings district 201 and the pad 202 around described video sensing district 201.

In this enforcement, described wafer to be wrapped 200 comprises the some chip area 210 of matrix arrangement and the first Cutting Road regions 220 between chip area 210 of being, described chip area 210 is used to form crystal grain, follow-uply along the first Cutting Road region 220, wafer to be wrapped 200 is cut and forms several discrete crystal grain, each crystal grain is corresponding forms an image sensor module.

Chip area 210 first surfaces of described wafer to be wrapped 200 have video sensing district 201 and the pad 202 around described video sensing district 201.In the present embodiment, for the ease of wiring, video sensing district 201 is positioned at the centre position in one single chip region 210, pad 202 is positioned at the marginal position of chip area 210, and described pad 202 is positioned at four sides in video sensing district 201, rectangular distribution, each side is formed with several pads 202 (quantity of pad 202 depends on the type of chip), follow-up pad 202 is connected with metal level, by metal level, crystal grain is connected with external circuit.

It should be noted that, in other embodiments, the position in pad 202 and video sensing district 201 can be adjusted flexibly according to the requirement of actual process, for example, in the present embodiment, pad is positioned at four sides in video sensing district 201, in other embodiments, pad and the side, both sides or three sides that are positioned at video sensing district, and the quantity of the pad of each side can be adjusted flexibly according to the requirement of actual process.

In the present embodiment, the pad 202 of different chip areas 210 is independent setting; In other embodiments, in adjacent chip area, can form the pad being connected, the pad forming is crossed over the first Cutting Road region, is cutting after wafer to be wrapped due to follow-up, the pad in described leap the first Cutting Road region can be cut to be held, and therefore can not affect the electric property of crystal grain.

Please continue to refer to Fig. 2, form metal coupling 203 on described pad 202 surfaces.

Acting as of described metal coupling 203: on the one hand, by described metal coupling 203, pad 202 is electrically connected with the metal level of follow-up formation; On the other hand; by the top of described metal coupling 203 being set higher than the top in video sensing district 201, follow-up when pad 202 is electrically connected with metal level, prevent that the surface of metal level from encountering video sensing district 201; play the effect in protection video sensing district 201, thereby improve encapsulation yield.

Being shaped as of described metal coupling 203 is square or spherical.The present embodiment does exemplary illustrated so that being shaped as of described metal coupling 203 is square as example, and the formation technique of described metal coupling 203 is screen printing technique.

As an embodiment, employing screen printing technique forms the concrete process of described metal coupling 203 and is: provide tool meshed web plate, described mesh corresponding with the position of metal coupling 203 (, the position of described mesh is corresponding with the position of pad 202); By the first surface laminating of web plate and wafer to be wrapped 200, make mesh in web plate expose the surface of pad 202, in mesh, brush into materials such as gold, tin or ashbury metals, remove the meshed half tone of described tool, form metal couplings 203 on pad 202 surfaces.

The material of described metal coupling 203 can be gold, tin or ashbury metal, and described ashbury metal can be tin silver, tin lead, SAC, tin silver zinc, tin zinc, tin bismuth indium, tin indium, Sillim, tin copper, tin zinc indium or tin silver antimony etc.

In other embodiments, being shaped as when spherical of metal coupling, the formation technique of described metal coupling is: plant ball technique or screen printing and reflux technique.

It should be noted that, in the present embodiment, before being carried out to reduction processing, wafer to be wrapped 200 second faces form described metal coupling 203, because the thicker wafer to be wrapped 200 that makes of thickness of wafer to be wrapped 200 has extraordinary mechanical strength, thereby avoid the technical process that forms metal coupling 203 to cause wafer to be wrapped 200 to occur the problem of breaking; And, before attenuate wafer to be wrapped 200, form metal coupling 203, the encapsulation procedure that wafer to be wrapped 200 after attenuate is experienced tails off, therefore, can further reduce the thickness that the rear wafer to be wrapped 200 of follow-up attenuate wafer to be wrapped 200 has, make the thickness of encapsulating structure of follow-up formation thinner, be more conducive to meet semiconductor miniaturization, microminiaturized development trend.

In another embodiment of the present invention, also can carry out after reduction processing wafer to be wrapped the second face, form metal coupling in bond pad surface.

Please refer to Fig. 3, the second face of described wafer to be wrapped 200 (please refer to Fig. 2) is carried out to reduction processing; Cut described wafer to be wrapped 200 (please refer to Fig. 2) along described the first Cutting Road region 220 (please refer to Fig. 2), form some single crystal grain 230.

Concrete, the back side of grinding described wafer to be wrapped 200, until the thickness of wafer to be wrapped 200 is to predetermined thickness, described grinding can be mechanical lapping or cmp.

For example, because second of wafer to be wrapped 200 (is not generally formed with function element, pad and video sensing district), therefore, the second face to wafer to be wrapped 200 carries out attenuate to a certain degree, both the performance that had ensured wafer to be wrapped 200 interior function element is not affected, and also can make the thinner thickness of the encapsulating structure of follow-up formation.

And, the follow-up technique that can not carry out to wafer to be wrapped 200 (i.e. the crystal grain of any single) etching formation through hole in the present embodiment, the follow-up manufacturing process that crystal grain itself is carried out is less, therefore, crystal grain does not need to have very high mechanical strength, after attenuate wafer to be wrapped 200, crystal grain can have less predetermined thickness, make the thickness of encapsulating structure of follow-up formation thin as much as possible, thereby reduce the thickness of the image sensor module forming, meet the development trend of product miniaturization.

Described cutting technique is laser cutting or slicer cutting.Because laser cutting parameter has less kerf width, therefore, in the present embodiment, adopt laser cutting parameter to cut described wafer to be wrapped 200, form some single crystal grain 230.

In wafer to be wrapped 200, there is the crystal grain 230 that some matrixes are arranged, in these crystal grain 230, may there is the poor crystal grain of some yields 230, the performance of the poor crystal grain 230 of described yield does not reach design requirement, if the crystal grain 230 poor to these yields encapsulates, the performance of the image sensor module forming can be poor, both can cause the waste of packaging cost, also can cause packaging efficiency low.

And in the present embodiment, form after some single crystal grain 220 at cutting wafer to be wrapped 200, select the crystal grain 230 that yield meets technological standards and carry out follow-up packaging technology, avoid the waste of packaging cost and improve packaging efficiency, improve the yield of the image sensor module of follow-up formation.

Please refer to Fig. 4, substrate 204 is provided, described substrate 204 has front and the back side with described vis-a-vis, and described substrate 204 comprises some functional areas 240 and the second Cutting Road region 250 between adjacent functional district 240.

Follow-up above described substrate 204 functional areas 240 upside-down mounting crystal grain 230 is set, to carry out packaging technology; And last in packaging technology, cuts substrate 204 along the second Cutting Road region 250, to form single encapsulating structure.The area in the area of described functional areas 240 and the second Cutting Road region 250 can be set according to actual package process requirements.Follow-up at positive resilient coating and the metal level of forming of described substrate 204.

Described substrate 204 provides a supporting role for crystal grain 230, and follow-up after substrate 204 surface formation resilient coatings and metal level, described metal level is used for connecting pad 202 and external circuit, and crystal grain 230 is electrically connected with external circuit.

Described substrate 204 is unorganic glass or polymethyl methacrylate, and, in the present embodiment, in crystal grain 230, there is video sensing district 201, after described video sensing district 201 receives light, be converted into electrical signal, therefore, forming after encapsulating structure, video sensing district 201 should be able to receive extraneous light, so that encapsulating structure can normally be worked.

In the present embodiment, the substrate 204 providing is transparent glass, and the material of substrate 204 is polymethyl methacrylate or unorganic glass.

Because any object more than absolute zero (237 DEG C) is all externally launched infrared ray (infrared light), that is to say, video sensing district 201 can sense visible ray and infrared light simultaneously, can draw: wavelength is longer, and refractive index is less according to the refraction of light dispersion law far away; Wavelength is shorter, and refractive index is larger.Therefore, when visible ray and infrared light enter behind video sensing district 201 simultaneously, visible ray and infrared light can be in different target surface imagings, visible ray be imaged as color graphics, infrared light be imaged as black and white imaging, after image that visible ray becomes is debugged, infrared light can form the virtual image at target surface, thereby affects the shade and quality of image, therefore, need substrate 204 fronts or the back side to form filter coating, by the infrared light elimination in light, solve the problem of image color distortion.

In an embodiment, in substrate 240 fronts, 204 functional areas or the back side form filter coating, described filter coating is IR coating (infrared filtering coating, Infrared Radiation) or AR coating (antireflecting coating, Anti-Refletance), described filter coating plays the effect of filtering infrared light.As an embodiment, form filter coating in substrate front surface; As another embodiment, form filter coating at backside of substrate; As other embodiment, all form filter coating in substrate front surface and the back side.

Adopt spraying or spin coating proceeding to form described filter coating, and the size of filter coating and substrate 204 consistent size.

Please continue to refer to Fig. 4, form resilient coatings 207 and be positioned at the metal level 208 on resilient coating 207 surfaces in 240 fronts, described substrate 204 functional areas, in the resilient coating 207 on 240 surfaces, same functional areas, have opening 209, described opening 209 exposes substrate 204 surfaces.

In the present embodiment, described substrate 204 is substrate of glass, in the time that described glass basic surface forms the line layer of metal material, the line layer of described metal material and the viscosity of glass basic surface are poor, easily cause between substrate 204 and crystal grain 230 and separate in encapsulation process; In order to improve the adhesiveness between substrate 204 and crystal grain 230, between substrate 204 and metal level 208, form resilient coating 207.

The material of described resilient coating 207 is organic polymer photoresist, for example, and epoxy resin or acrylic resin; The material of described metal level 208 is Cu, Al, W, Sn, Au or Sn-Au alloy.Between described resilient coating 207 and substrate 204 surfaces, there is stronger viscosity, and also there is stronger viscosity between described resilient coating 207 and metal level 208, thereby improve encapsulation performance.

In the laminated construction of described resilient coating 207 and metal level 208, there are some openings 209, follow-up after pad 202 is connected with metal level 208 video sensing district 201 be positioned at above opening 209, in the present embodiment, described opening 209 exposes substrate 204 surfaces, and the width of described opening 209 is more than or equal to the width in video sensing district 201, so that the extraneous light of reception of video sensing district 201 energy maximum magnitudes.

In the embodiment of the present invention, the same functional areas 204 of substrate 204 form some discrete metal levels 208, and the quantity of discrete metal level 208 is corresponding with quantity and the position of the pad 202 that position has with single crystal grain 230, for example, video sensing district 201 4 sides of crystal grain 230 are all formed with pad 202, four sides of opening 209 are all formed with metal level 208, and the quantity of the discrete metal level 208 of opening 209 each side is identical with the quantity of the pad 202 of the corresponding side in video sensing district 201; In other embodiments of the invention, relative both sides, video sensing district are formed with pad, and the both sides that opening is relative are formed with metal level, and the quantity of the discrete metal level of each side of opening is identical with the quantity of the pad of the corresponding side in video sensing district.

In the present embodiment, the metal level 208 on 240 surfaces, adjacent functional district is connected, and metal level 208 is except being positioned at 240 surfaces, substrate 204 functional areas, and described metal level 208 is also positioned at the second Cutting Road region 250; Because the second Cutting Road region 250 is finally can being cut and holding of packaging technology, cut the opening of metal level 208 in described leap the second Cutting Road region 250, therefore can not affect the performance of single encapsulating structure.

Please refer to Fig. 5, described crystal grain 230 upside-down mountings are placed in to 240 tops, substrate 204 functional areas, and described pad 202 and metal level 208 are electrically connected.

In the present embodiment, select crystal grain 230 upside-down mountings that yield meets standard and be placed in the top of substrate 204.

Concrete, described pad 202 is connected by metal coupling 203 with metal level 208, and each pad 202 is corresponding to a discrete metal level 208.Adopt solder bonds technique that pad 202 is connected with metal level 208, described pad 202 and metal level 208 weld together by the material in metal coupling 203.

Described solder bonds technique is eutectic bonding, ultrasonic thermocompression, thermal compression welding, ultrasonic wire bonding etc.For example, in the time that the material of described metal level 208 is Al, the material of described metal coupling 203 is Au, and solder bonds technique is ultrasonic thermocompression mode; In the time that the material of described metal level 208 is Au, the material of described metal coupling 203 is Sn, and solder bonds technique is eutectic bonding mode.

After pad 202 and metal level 208 electrical connections, video sensing district 201 is positioned at opening 209 tops, and extraneous light, through the video sensing district 201 that is transmitted to opening 209 tops after substrate 204, is beneficial to video sensing district 201 and receives extraneous light; And in the present embodiment, the width of opening 209 is greater than the width in video sensing district 201, can make video sensing district 201 receive to greatest extent extraneous light, improve the light utilization in video sensing district 201.

, because the thickness of metal coupling 203 is greater than the thickness of video sensing district 201 interior photo-sensitive cells, make by crystal grain 230 upside-down mountings above substrate 204 time, video sensing district 201 can not touch metal level 208 surfaces, prevents that video sensing district 201 from sustaining damage meanwhile.

Please refer to Fig. 6, form the plastic packaging layer 211 that is covered in described metal level 208 surfaces and 230 second of crystal grain and sidewall surfaces.

Form acting as of described plastic packaging layer 211: on the one hand, the plastic packaging layer 211 of formation plays the effect of protection crystal grain 230, prevents crystal grain 230 performance failures that cause under the impact of external environment, prevent that moisture from being invaded, being insulated with external electrical by outside; On the other hand, described plastic packaging layer 211 plays the effect of supporting crystal grain 230, crystal grain 230 is fixed so that follow-up circuit connects, and, after encapsulation completes, make chip not fragile; In addition, described plastic packaging layer 211 also plays the effect of the solder-bump of fixing follow-up formation, for solder-bump provides protection.

Adopt plastic package process (molding) to form described plastic packaging layer 211, described plastic package process adopts branch mode or pressing mode, and the top surface of described plastic packaging layer 211 flushes with crystal grain 230 second faces or higher than 230 second of crystal grain.

Adopt the mode of whole module or some separate modules to form described plastic packaging layer 211.

In the present embodiment, adopt the mode of whole module to form described plastic packaging layer 211,, metal level 208 and the crystal grain 230 of substrate 204 tops to monoblock carry out plastic package process, the plastic packaging layer 211 forming, except being covered in 230 second of metal level 208 surface of functional areas 240 and crystal grain, is also covered in metal level 208 surfaces in the second Cutting Road region 250.While adopting the mode of whole module to form plastic packaging layer 211, can avoid alignment issues, thereby reduce the difficulty of plastic package process.

In other embodiments, adopt the mode of some separate modules to form described plastic packaging layer 211, the plastic packaging layer 211 of a module is at least covered in metal level 208 surface and 230 second surfaces of crystal grain on functional areas 240, described plastic packaging layer 211 can cover the metal level 208 of whole functional areas 240, also the metal level 208 of covering function district 240 part areas only.The material of described plastic packaging layer 211 is resin or anti-solder ink material, for example, and epoxy resin or acrylic resin.

Please refer to Fig. 7, at the interior formation through hole of described plastic packaging layer 211, described via bottoms exposes metal level 208 surfaces; Form the solder-bump 215 of filling full described through hole.

Adopt laser drilling technique or etching technics to form described through hole.As an embodiment, the processing step that adopts etching technics to form through hole comprises: form patterned mask layer on described plastic packaging layer 211 surface, in described patterned mask layer, have groove, the position of described groove and width are corresponding to position and the width of follow-up formation through hole; Taking described patterned mask layer as mask, plastic packaging layer 211 described in etching until expose metal level 208 surfaces, exposes the through hole on metal level 208 surfaces in the interior formation of described plastic packaging layer 211; Remove described patterned mask layer.

The quantity of the through hole forming is identical with the quantity of pad 202, in other words, the quantity of described through hole is identical with the quantity of discrete metal level 208, and each discrete metal level 208 top is all formed with a through hole, and each pad 202 of crystal grain 230 all can be electrically connected with external circuit.

In the present embodiment, by the mode at the interior formation through hole of plastic packaging layer 211, realize the object that pad 202 is electrically connected with external circuit, avoided the harmful effect that brings at the interior formation through hole of crystal grain 230, improved the performance of the image sensor module of follow-up formation.

By described solder-bump 215, pad 202 is electrically connected with external circuit, thereby crystal grain 230 is normally worked.Described solder-bump 215 top surfaces are shaped as arc, the material of solder-bump 215 is gold, tin or ashbury metal, and described ashbury metal can be tin silver, tin lead, SAC, tin silver zinc, tin zinc, tin bismuth indium, tin indium, Sillim, tin copper, tin zinc indium or tin silver antimony etc.

As an embodiment, the material of solder-bump 215 is tin, and the step that forms described solder-bump 215 comprises: form the metal material of filling full described through hole, adopt reflux technique, form described solder-bump 215.

As a specific embodiment, the distance between described solder-bump 215 tops to plastic packaging layer 211 surface is 20 μ m to 100 μ m.

Most solder-bump 215 surfaces are coated by plastic packaging layer 211, only retain few solder-bump 215 surfaces in external environment, effectively prevent that solder-bump 215 is oxidized by external environment, improves the reliability and stability of the encapsulating structure of follow-up formation.And, in the interior formation solder-bump 215 of plastic packaging layer 211, the top of described solder-bump 215 is a little more than plastic packaging layer 211 surface, can make crystal grain 230 be electrically connected with external circuit, and solder-bump 215 tops a little more than plastic packaging layer 211 surface (solder-bump 215 tops to the distance on plastic packaging layer 211 surface be 20 μ m to 100 μ m), the integral thickness that can further reduce the encapsulating structure of follow-up formation, is conducive to improve encapsulation and integration degree.

Please refer to Fig. 8, cut described plastic packaging layer 211 and substrate 204 along described the second Cutting Road region 250 (please refer to Fig. 7), form some single encapsulating structures.

In the present embodiment, adopt slicer cutting or laser cutting parameter to cut described plastic packaging layer 211, metal level 208, resilient coating 207 and substrate 204, form some single encapsulating structures.

Described cutting technique only carries out cutting process to substrate 204, plastic packaging layer 211, metal level 208 and resilient coating 207, has avoided the cutting process to crystal grain 230; And, due to aforementioned, wafer to be wrapped is being carried out after reduction processing, form and had compared with the crystal grain of minimal thickness 230, therefore, the thinner thickness of the encapsulating structure that the present embodiment forms; Simultaneously, the packaging technology that the present embodiment forms encapsulating structure is simple, and the encapsulation procedure that crystal grain 230 is carried out few (crystal grain 230 has only experienced attenuate and formed the encapsulation procedure of metal coupling 203) itself, make encapsulating structure have extraordinary encapsulation performance, encapsulation yield gets a promotion; Finally, the present embodiment can be selected the good crystal grain 230 of yield and encapsulate, thereby has further improved encapsulation yield, effectively reduces packaging cost.

And, because solder-bump 215 tops are very little to the distance on plastic packaging layer 211 surface, be 20 μ m to 100 μ m, therefore further reduce the integral thickness of the encapsulating structure forming; Meanwhile, because solder-bump 215 major parts are enveloped by plastic packaging layer 211, reduce solder-bump 215 and be exposed to the area in external environment, thereby prevented that solder-bump 215 from being destroyed by external environment, further improved the reliability of encapsulating structure.

In another embodiment of the present invention, please refer to Fig. 9, before forming solder-bump 215, comprise step: form some glue-line 214 at crystal grain 230 sidewalls, and described some glue-line 214 is also covered in metal coupling 203 sidewall surfaces.

Described some glue-line 214 plays the effect of protection crystal grain 230, makes video sensing district 201 in sealing state; Form solder-bump 215 on metal level 208 surfaces, and described solder-bump 215 tops are higher than crystal grain 230 surfaces.

Concrete, employing is planted ball technique and is formed described solder-bump 215, and solder-bump 215 tops to the distance on crystal grain 230 surfaces is 20 μ m to 100 μ m.

When crystal grain 230 sidewall surfaces form while having a some glue-line 214, cut after described substrate 204, the encapsulating structure of formation is as shown in figure 10.

Please refer to Figure 11, form lens assembly at substrate 204 back sides of described encapsulating structure, described lens assembly comprises microscope base 292 and eyeglass 290, and wherein, described eyeglass 290 is connected with described substrate 204 by microscope base 292.

In the present embodiment, before cutting substrate 204, be formed with filter coating in substrate 204 fronts or the back side, described filter coating plays the effect of filtering infrared light.In other embodiments, if before cutting substrate, substrate front surface or the back side do not form filter coating, can, after cutting substrate, form filter coating at backside of substrate.

Described microscope base 292 is hollow structure, between microscope base 292 and substrate 204, form groove, eyeglass 290 is positioned at described groove or groove top, the position of described eyeglass 290 is corresponding to the position of opening 209, be that the position of described eyeglass 290 is corresponding to the position in described video sensing district 201, and the size of eyeglass 290 is more than or equal to the size of opening 209, makes extraneous light can see through described eyeglass 290 and be irradiated to 201 surfaces, video sensing district.

In the present embodiment, eyeglass 290 is connected with microscope base 292 by support portion 291, and, lateral wall in described support portion 291 forms external screw thread, corresponding, forms corresponding internal thread at the madial wall of described microscope base 292, by mutually screwing togather between described external screw thread and internal thread, eyeglass 290 and microscope base 292 are interfixed, and, the position of eyeglass 290 can be regulated by rotating described support portion 291

As an embodiment, in the time that substrate 204 back sides are formed with filter coating, eyeglass 290 can be very close filter coating, therefore the close substrate 204 that described eyeglass 290 can be very, can effectively reduce the thickness of the image sensor module of formation, be conducive to the development trend of the miniaturization that meets product.As another embodiment, be formed with filter coating in substrate 204 fronts and the back side while not forming filter coating, described eyeglass 290 can more close substrate 204, thereby further reduces the thickness of image sensor module.

And, because the thickness of the encapsulating structure forming in the present embodiment itself is also thinner than the thickness of the encapsulating structure of prior art formation, therefore, the thickness of the image sensor module forming on the basis of described encapsulating structure has further reduced, and more can meet the development trend of product miniaturization.

In other embodiments of the invention, as shown in figure 12, if in substrate 204 fronts or when the back side is not formed with filter coating, form filter glass 280 on microscope base 292, described filter glass 280 plays the effect of filtering infrared light.When forming in crystal grain 230 sidewall surfaces while having a some glue-line 214, the image sensor module of formation as shown in figure 13.

Accordingly, the present embodiment provides a kind of image sensor module, please refer to Figure 11, and described image sensor module comprises:

Substrate 204, described substrate 204 has front and the back side with described vis-a-vis; Be positioned at described substrate 204 front resilient coatings 207 and be positioned at the metal level 208 on resilient coating 207 surfaces; The crystal grain 230 of upside-down mounting above substrate 204, described crystal grain 230 has video sensing district 201 and the pad 202 around described video sensing district 201, and described pad 202 and metal level 208 are electrically connected; Be positioned at the solder-bump 215 on metal level 208 surfaces; Lens assembly, described lens assembly comprises microscope base 292 and eyeglass 290, wherein, described eyeglass 290 is connected with described substrate 204 back sides by microscope base 292.

The material of described substrate 204 is unorganic glass or polymethyl methacrylate or filter glass.

In embodiments of the present invention, be formed with filter coating in substrate 204 fronts or the back side, described filter coating is IR coating or AR coating, the size of described filter coating and substrate 204 consistent size, and described filter coating plays the effect of filtering infrared light.As an embodiment, be formed with filter coating in substrate 204 fronts; As another embodiment, be formed with filter coating at substrate 204 back sides; As other embodiment, be all formed with filter coating at substrate 204 front and backs.

Described resilient coating 207 increases the adhesiveness between substrate 204 and metal level 208, thereby improves the adhesiveness between substrate 204 and crystal grain 230, prevents from separating between crystal grain 230 and substrate 204.

The material of described resilient coating 207 is organic polymer photoresist, and described organic polymer photoresist is epoxide-resin glue, acrylic resin, polyimides glue, benzocyclobutene glue or polybenzoxazoles glue; The material of described metal level 208 is Cu, Al, W, Sn, Au or Sn-Au alloy.

In described resilient coating 207, there is the opening 209 that exposes substrate 204, described video sensing district 201 is positioned at opening 209 tops, video sensing district 201 can receive extraneous light by described opening 209, in the present embodiment, described opening 209 width are greater than video sensing district 201 width, improve the utilance of video sensing district 201 to light.

In the present embodiment, the sidewall of metal level 208 flushes with the sidewall of substrate 204.Described image sensor module also comprises: metal coupling 203, described metal coupling 203, between pad 202 and metal level 208, connects described pad 202 and metal level 208 by described metal coupling 203.

The position of described metal coupling 203 is corresponding with position and the quantity of described pad 202 with quantity, and the quantity of metal coupling 203 is identical with the quantity of pad 202, and the spacing of adjacent metal projection 203 equates with the spacing of adjacent pad 202.Being shaped as of described metal coupling 203 is square or spherical, and the material of described metal coupling 203 is tin, gold or ashbury metal.

In the present embodiment, also comprise: the plastic packaging layer 211 that is positioned at described metal level 208 surfaces and crystal grain 230 surfaces; Be positioned at the through hole of described plastic packaging layer 211, and described via bottoms exposes metal level 208 surfaces, solder-bump 215 is filled full described through hole, and solder-bump 215 tops are higher than plastic packaging layer 211 surface.

In the present embodiment, the top shape of described solder-bump 215 is spherical, and the material of described solder-bump 215 is tin, gold or ashbury metal.As a specific embodiment, described solder-bump 215 tops to the distance on plastic packaging layer 211 surface is 20 μ m to 100 μ m.

The encapsulating structure that the present embodiment provides, plastic packaging layer 211 envelopes crystal grain 230, prevents that external environment from causing harmful effect to crystal grain 230, improves the reliability and stability of encapsulating structure; In plastic packaging layer 211, be formed with the through hole that exposes metal level 208 surfaces, in through hole, be formed with solder-bump 215, by solder-bump 215, pad 212 is electrically connected with external circuit, both avoided damage or pollution that crystal grain 230 is caused itself, the encapsulation performance of encapsulating structure is improved; And, solder-bump 215 major parts are enveloped by plastic packaging layer 211, reduced the area that solder-bump 215 contacts with external environment, thereby it is oxidized or be subject to the possibility of other damages to have reduced greatly solder-bump 215, further improves the reliability of encapsulating structure.

Simultaneously, from described encapsulating structure, can find out, compared with prior art, in packaging technology in the encapsulating structure that formation the present embodiment provides, the encapsulation procedure of effect in crystal grain 230 is obviously than few many of prior art, the thickness of the crystal grain 230 in the present embodiment encapsulating structure is less than the thickness of the crystal grain of prior art, and therefore, in the present embodiment, the thickness of encapsulating structure is significantly less than the thickness of the encapsulating structure of prior art.

In the present embodiment, image sensor module also comprises: support portion 291, interfixes eyeglass 290 and microscope base 292 by described support portion 291.Described support portion 291 lateral walls have external screw thread, described microscope base 292 madial walls have internal thread, described support portion 291 and described microscope base 292 are screwed togather and are interfixed by screw thread, by rotating described support portion 291, can adjust the distance between eyeglass 290 and substrate 204.

In the present embodiment, in substrate 204 fronts or the back side form filter coating, therefore by regulating described support portion 291, can make eyeglass 290 very near substrate 204 back sides, therefore eyeglass 290 is very near substrate 204 back sides, thereby further reduces the thickness of image sensor module.

In other embodiments of the invention, as shown in figure 12, in substrate 204 fronts or when the back side is not formed with filter coating, described image sensor module also comprises: filter glass 280 filter glass 280 cards are assigned on microscope base 292, between filter glass 280 and substrate 204 back sides, have certain distance.

In another embodiment of the present invention, as shown in figure 13, also comprise: be covered in the some glue-line 214 of described crystal grain 230 sidewall surfaces, and described some glue-line 214 is also covered in metal coupling 203 sidewall surfaces.Described some glue-line 214 plays the effect of protection crystal grain 230, prevents that external environment from causing harmful effect to crystal grain 230, improves the reliability of encapsulating structure.

As a specific embodiment, solder-bump 215 tops to the vertical range on crystal grain 230 surfaces is 20 μ m to 100 μ m, wherein, described vertical range refers to perpendicular to the distance on the in-plane of the surperficial place of metal level 208, and described crystal grain 230 surfaces refer to the surface that is not formed with pad 202.By solder-bump 215 being set on metal level 208 surfaces, pad 202 is electrically connected with external circuit, avoid damage or pollution that crystal grain 230 is caused itself, the encapsulation performance of encapsulating structure is improved; And solder-bump 215 tops are very little to the distance on crystal grain 230 surfaces, be 20 μ m to 100 μ m, make encapsulating structure there is less thickness, meet the development trend of semiconductor miniaturization microminiaturization.

Another embodiment of the present invention also provides a kind of method for packing, Figure 14 to Figure 16 is the structural representation of another embodiment of the present invention image sensor module forming process, it should be noted that, in the present embodiment, the restriction such as parameter and effect of structure same with the above-mentioned embodiment repeats no more in the present embodiment, specifically please refer to above-described embodiment.

Please refer to Figure 14, some single crystal grain 230 is provided; Substrate 204 is provided, and described substrate 204 has front and the back side with described vis-a-vis, and described substrate 204 comprises some functional areas 240 and the second Cutting Road region 250 between adjacent functional district 240; Form resilient coating 207 and be positioned at the metal level 208 on resilient coating 207 surfaces on described substrate 204 surfaces, and in the resilient coating 207 of same functional areas 240, be formed with the opening 209 that exposes substrate 204 surfaces; Form metal coupling 203 on described metal level 208 surfaces; By described crystal grain 230 upside-down mountings, above substrate 204 functional areas 240, pad 202 is connected by metal coupling 203 with metal level 208; Metal level 208 in formation covering described substrate 204 functional areas 240 and the plastic packaging layer 211 on crystal grain 230 surfaces; At the interior formation through hole of described plastic packaging layer 211, described via bottoms exposes metal level 208 surfaces; Form the solder-bump 215 of filling full described through hole, and described solder-bump 215 tops are higher than plastic packaging layer 211 surface.

In the present embodiment, described resilient coating 207 and metal level 208 are only positioned at functional areas 240, and before forming plastic packaging layer 211, expose 240 surfaces, substrate 204 functional areas between metal level 208 sidewalls and 250 borders, the second Cutting Road region, be metal level 208 away from thering is certain distance between the sidewall of opening 209 and 250 borders, the second Cutting Road region, and substrate 240 surfaces, functional areas in described distance are exposed.Its benefit is:

In the time forming plastic packaging layer 211, plastic packaging layer 211 is covered in 240 surfaces, described substrate 204 functional areas, therefore, the plastic packaging layer 211 forming is covered in metal level 208 sidewall surfaces and resilient coating 207 sidewall surfaces, avoid metal level 208 sidewalls to be exposed in external environment, there is unnecessary being electrically connected with external circuit in the sidewall that prevents metal level 208, can also prevent that the material of metal level 208 is oxidized, thereby improve the reliability of follow-up formation image sensor module.

In the present embodiment, the plastic packaging layer 211 of formation is covered in metal level 208 sidewall surfaces in same functional areas 240, that is, metal level 208 sidewall surfaces that are positioned at functional areas 240 are covered by plastic packaging layer 211.

In the present embodiment, form metal coupling 203 on metal level 208 surfaces, further reduced the processing step acting on crystal grain 230, thereby made the more excellent performance of crystal grain 230, be conducive to improve the performance of the image sensor module forming.

As an embodiment, at the positive filter coating that forms of substrate 204; As another embodiment, form filter coating at substrate 204 back sides; As other embodiment, form filter coating at substrate 204 front and backs.

In the present embodiment, adopt the mode of some separate modules to form plastic packaging layer 211, ensure that the plastic packaging layer 211 on same functional areas 240 is covered in crystal grain 230 surfaces completely, and plastic packaging layer 211 is covered in metal level 208 sidewall surfaces.As a specific embodiment, the method described in forming with the plastic packaging layer 211 of some separate modules is simultaneously: adopt multiple moulds, and in each mould, fill plastic packaging layer 211 material, metal level 208 surfaces by mold compresses in substrate 204, carry out drying and processing recession except mould, form the plastic packaging layer 211 with some separate modules.

Material, formation method and the effect of described solder-bump 215 can, with reference to the explanation of previous embodiment, not repeat them here.

It should be noted that, the present embodiment is to form plastic packaging layer, form through hole in plastic packaging layer after, forming solder-bump is that example is done exemplary illustrated, in other embodiments of the invention, also can form some glue-line at crystal grain sidewall and metal coupling sidewall surfaces, then form solder-bump at layer on surface of metal, and described solder-bump top is higher than grain surface, specifically can be with reference to the explanation of previous embodiment.

Please refer to Figure 15, form lens assembly at 240 back sides, described substrate 204 functional areas, described lens assembly comprises microscope base 292 and eyeglass 290, and wherein, described eyeglass 290 is connected with described substrate 204 back sides by microscope base 292.

Also comprise step: form support portion 291.The method that forms lens assembly can, with reference to previous embodiment, not repeat them here.

The present embodiment formed lens assembly before cutting substrate 204, had saved packaging technology required time, had improved packaging efficiency.

In other embodiments of the invention, if when substrate front surface or the back side are not formed with filter coating, on microscope base, form filter glass, specifically can, with reference to the explanation of previous embodiment, not repeat them here.

Please refer to Figure 16, cut described substrate 204 along described the second Cutting Road region 250 (please refer to Figure 15), form the encapsulating structure of some single, described encapsulating structure comprises the lens assembly such as eyeglass 290 and microscope base 292.

In the present embodiment, multiple crystal grain 230 is carried out to packaging technology and form encapsulating structure, compared with wafer-level packaging technique, packaging technology condition milder in the present embodiment, after packaging technology in experience the present embodiment, filter coating still can keep higher yield, thereby improves the yield that forms image sensor module.

In the present embodiment, metal level 208 sidewalls have certain distance from 250 borders, the second Cutting Road region, therefore, cut substrate 204 along the second Cutting Road region 250, form some single encapsulating structures.Due to not cutting metal layer 208 of cutting technique, therefore metal level 208 sidewalls are still covered by plastic packaging layer 211, thereby prevent that metal level 208 sidewalls from exposing in external environment, improve the reliability and stability of image sensor module.

In the present embodiment, act on seldom (crystal grain 230 has only experienced attenuate and cutting process) of crystal grain 230 encapsulation procedures, make crystal grain 230 keep higher performance, the yield of the encapsulating structure of formation gets a promotion, and the encapsulation performance of encapsulating structure is excellent; And the present embodiment, by the interior formation through hole of plastic packaging layer 211, forms the mode of solder-bump 215 in through hole, and crystal grain 230 can be electrically connected with external circuit, has further reduced packaging technology step, packaging technology is simple.

And solder-bump 215 major parts are covered by plastic packaging layer 211, reduce the harmful effect of external environment to solder-bump 215, improve the reliability and stability of encapsulating structure; Meanwhile, because crystal grain 230 is thinned to thinner thickness, make the encapsulating structure forming also there is thinner thickness.And the present embodiment can select the good crystal grain 230 of yield and encapsulate, improve greatly the encapsulation yield of packaging efficiency and encapsulating structure, reduce packaging technology cost.

The present embodiment does exemplary illustrated in other embodiments to form lens assembly before cutting substrate 204 as example, also can after cutting substrate, form lens assembly.

Accordingly, please refer to Figure 16, the present embodiment provides a kind of image sensor module, comprising:

Substrate 204, described substrate 204 has front and the back side with described vis-a-vis; Be positioned at the resilient coating 207 in described substrate 204 fronts and be positioned at the metal level 208 on resilient coating 207 surfaces; The crystal grain 230 of upside-down mounting above substrate 204, described crystal grain 230 has video sensing district 201 and the pad 202 around described video sensing district 201, and described pad 202 and metal level 208 are electrically connected; Be positioned at the plastic packaging layer 211 on described metal level 208 surfaces and crystal grain 230 surfaces; Be positioned at the through hole of described plastic packaging layer 211, and described via bottoms exposes metal level 208 surfaces; Fill the solder-bump 215 of full through hole, and solder-bump 215 tops are higher than plastic packaging layer 211 surface; Lens assembly, described lens assembly comprises microscope base 292 and eyeglass 290, wherein, described eyeglass 290 is connected with described encapsulating structure by microscope base 292.

Described image sensor module also comprises: metal coupling 203, described metal coupling 203, between pad 202 and metal level 208, connects described pad 202 and metal level 208 by described metal coupling 203.

Described substrate 204, resilient coating 207, metal level 208 plastic packaging layers 211, metal coupling 203, solder-bump 215, eyeglass 290 and microscope base 292 can, with reference to the description of previous embodiment, not repeat them here.

In the image sensor module that the present embodiment provides, in resilient coating 207, there is the opening 209 that exposes part substrate 204 surfaces, be that described metal level 208 exposes substrate 204 part surfaces away from described opening 209, substrate 204 part surfaces that expose described in described plastic packaging layer 211 is covered in, therefore plastic packaging layer 211 is covered in metal level 208 sidewall surfaces, the sidewall that prevents metal level 208 is exposed in external environment, there is unnecessary being electrically connected with external circuit in the metal level 208 of avoiding being exposed in external environment, the material that can also prevent metal level 208 is oxidized by external environment, improve the reliability of image sensor module.

In other embodiments, metal level sidewall also can come out, and metal level sidewall flushes with base side wall.

The present embodiment does exemplary illustrated to comprise the plastic packaging layer 211 that is covered in metal level 208 surfaces and crystal grain 230 surfaces as example, in other embodiments, comprise: be covered in the some glue-line of described crystal grain sidewall surfaces, and described some glue-line is also covered in metal coupling sidewall surfaces.Described some glue-line plays the effect of protection crystal grain 230, prevents that external environment from causing harmful effect to crystal grain, improves the reliability of encapsulating structure.

In the present embodiment, image sensor module also comprises: support portion 291, interfixes eyeglass 290 and microscope base 292 by described support portion 291.Described support portion 291 lateral walls have external screw thread, described microscope base 292 madial walls have internal thread, described support portion 291 and described microscope base 292 are screwed togather and are interfixed by screw thread, by rotating described support portion 291, can adjust the distance between eyeglass 290 and substrate 204.

In the present embodiment, be formed with filter coating in substrate 204 fronts or the back side, described filter coating is IR coating or AR coating.In the time that filter coating is positioned at substrate 204 back side, by regulating described support portion 291, can make eyeglass 290 very near filter coating, and because filter coating in the present embodiment is positioned at substrate 204 back sides, therefore eyeglass 290 is very near substrate 204 back sides, thereby further reduces the thickness of image sensor module.

In other embodiments, if in the time that substrate front surface or the back side are not formed with filter coating, image sensor module also comprises: filter glass, described filter glass card is assigned on microscope base.

Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.

Claims (28)

1. an image sensor module, is characterized in that, comprising:

Substrate, described substrate has front and the back side with described vis-a-vis;

Be positioned at the resilient coating of described substrate front surface and be positioned at the metal level of buffer-layer surface;

The crystal grain of upside-down mounting above substrate, described crystal grain has video sensing district and the pad around described video sensing district, and described pad and metal level electrical connection;

Be positioned at the solder-bump of described layer on surface of metal;

Lens assembly, described lens assembly comprises microscope base and eyeglass, wherein, described eyeglass is connected with described backside of substrate by microscope base.

2. image sensor module as claimed in claim 1, is characterized in that, the material of described substrate is unorganic glass or polymethyl methacrylate.

3. image sensor module as claimed in claim 2, is characterized in that, also comprises: filter glass, described filter glass card is assigned on microscope base.

4. image sensor module as claimed in claim 2, is characterized in that, described substrate front surface or the back side are formed with filter coating.

5. image sensor module as claimed in claim 4, is characterized in that, described filter coating is IR coating or AR coating.

6. image sensor module as claimed in claim 1, is characterized in that, also comprises: support portion, interfixes eyeglass and microscope base by described support portion.

7. image sensor module as claimed in claim 6, is characterized in that, described support portion lateral wall has external screw thread, and described microscope base madial wall has internal thread, and described support portion and described microscope base are screwed togather and interfixed by screw thread.

8. image sensor module as claimed in claim 1, is characterized in that, also comprises: be covered in metal layer by layer and the plastic packaging layer of grain surface; Be positioned at the through hole of plastic packaging layer, described via bottoms exposes layer on surface of metal, and the full described through hole of solder-bump filling, and solder-bump top is higher than plastic packaging layer surface.

9. image sensor module as claimed in claim 8, is characterized in that, described solder-bump top to the distance on plastic packaging layer surface is 20 μ m to 100 μ m.

10. image sensor module as claimed in claim 8, is characterized in that, described plastic packaging layer is covered in metal level sidewall surfaces.

11. image sensor modules as claimed in claim 1, is characterized in that, also comprise: metal coupling, metal coupling, between pad and metal level, connects described pad and metal level by described metal coupling.

12. image sensor modules as claimed in claim 11, is characterized in that, also comprise: the some glue-line that is covered in crystal grain sidewall surfaces and metal coupling sidewall surfaces.

13. image sensor modules as claimed in claim 1, is characterized in that, described metal level sidewall flushes with base side wall.

The formation method of 14. 1 kinds of image sensor modules, is characterized in that, comprising:

Some single crystal grain is provided, and described crystal grain has video sensing district and the pad around described video sensing district;

Substrate is provided, and described substrate comprises some functional areas and the Cutting Road region between adjacent functional district, and surface, described substrate functional areas is formed with resilient coating and is positioned at the metal level of buffer-layer surface;

Described crystal grain upside-down mounting is placed in to the top of substrate functional areas, and described pad and metal level electrical connection;

Form solder-bump at described layer on surface of metal;

Cut described substrate along described Cutting Road region, form some single encapsulating structures;

Before or after the described substrate of cutting, form described lens assembly, described lens assembly comprises microscope base and eyeglass, wherein, described eyeglass is connected with backside of substrate by microscope base.

The 15. formation methods of image sensor module as claimed in claim 14, is characterized in that, the material of described substrate is unorganic glass or polymethyl methacrylate.

The 16. formation methods of image sensor module as claimed in claim 15, is characterized in that, also comprise step: on described microscope base, form filter glass.

The 17. formation methods of image sensor module as claimed in claim 15, is characterized in that, form filter coating in described substrate front surface or the back side.

The 18. formation methods of image sensor module as claimed in claim 17, is characterized in that, described filter coating is IR coating or AR coating.

The 19. formation methods of image sensor module as claimed in claim 17, is characterized in that, adopt spraying or spin coating proceeding to form described filter coating.

The 20. formation methods of image sensor module as claimed in claim 14, is characterized in that, also comprise step: form support portion, by described support portion, eyeglass and microscope base are interfixed.

The 21. formation methods of image sensor module as claimed in claim 20, is characterized in that, the lateral wall of described support portion has external screw thread, and the madial wall of described microscope base has internal thread, and described support portion and described microscope base interfix by screw thread screw-in version.

The 22. formation methods of image sensor module as claimed in claim 14, is characterized in that, the material of described resilient coating is organic polymer photoresist; The material of described metal level is Cu, Al, W, Sn, Au or Sn-Au alloy.

The 23. formation methods of image sensor module as claimed in claim 14, is characterized in that, before forming solder-bump, also comprise step: form the plastic packaging layer that is covered in described metal level and grain surface; In described plastic packaging layer, form through hole, described via bottoms exposes layer on surface of metal; Form the solder-bump of filling full described through hole, and described solder-bump top is higher than plastic packaging layer surface.

The 24. formation methods of image sensor module as claimed in claim 23, is characterized in that, described solder-bump top to the distance on plastic packaging layer surface is 20 μ m to 100 μ m.

The 25. formation methods of image sensor module as claimed in claim 23, is characterized in that, described plastic packaging layer is covered in the metal level sidewall surfaces of same functional areas.

The 26. formation methods of image sensor module as claimed in claim 14, is characterized in that, also comprise step: form metal coupling in described bond pad surface or layer on surface of metal, described pad and metal level are electrically connected by metal coupling.

The 27. formation methods of image sensor module as claimed in claim 26, is characterized in that, the material of described metal coupling is tin, gold or ashbury metal.

The 28. formation methods of image sensor module as claimed in claim 26, is characterized in that, before forming solder-bump, also comprise step: form the some glue-line that is covered in described crystal grain sidewall surfaces and metal coupling sidewall surfaces.