CN103928301A - Method for manufacturing metal-dielectric-metal structure capacitor - Google Patents
Method for manufacturing metal-dielectric-metal structure capacitor Download PDFInfo
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- CN103928301A CN103928301A CN201410156492.3A CN201410156492A CN103928301A CN 103928301 A CN103928301 A CN 103928301A CN 201410156492 A CN201410156492 A CN 201410156492A CN 103928301 A CN103928301 A CN 103928301A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 83
- 239000002184 metal Substances 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000003990 capacitor Substances 0.000 title abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 238000001259 photo etching Methods 0.000 claims abstract description 37
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000007747 plating Methods 0.000 claims description 33
- 239000010931 gold Substances 0.000 claims description 21
- 238000011161 development Methods 0.000 claims description 20
- 239000003292 glue Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 238000010079 rubber tapping Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 108090000723 Insulin-Like Growth Factor I Proteins 0.000 claims description 4
- 102000013275 Somatomedins Human genes 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000009713 electroplating Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005755 formation reaction Methods 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention discloses a method for manufacturing a metal-dielectric-metal structure capacitor, which comprises the following steps: coating photoresist on the substrate, and carrying out photoetching and developing on the photoresist to form a lower electrode plate pattern on the substrate; evaporating a plurality of layers of metal on the substrate with the lower plate pattern to form a lower plate of the metal-dielectric-metal capacitor; depositing a dielectric layer on the substrate on which the lower polar plate is formed; carrying out photoetching and developing on the photoresist uniformly on the substrate deposited with the dielectric layer to form an opening on the photoresist; then etching to remove the dielectric layer at the opening, putting the substrate into an acetone solution, and removing the photoresist; carrying out full photoresist evening on a substrate, carrying out photoetching and developing on the photoresist, forming an upper polar plate pattern on the photoresist, and sputtering a coating on the surface of the substrate; coating photoresist on the substrate with the sputtered coating in a whole piece, and carrying out photoetching and developing on the photoresist to form an upper polar plate pattern and a pressure point pattern; then putting the substrate into electroplating solution for electroplating, and putting the electroplated substrate into acetone solution for stripping to form an air bridge pattern, a capacitor upper electrode plate and a pressure point.
Description
Technical field
The present invention relates to passive semiconductor element manufacture technology field, the manufacture method of especially a kind of metal-dielectric-metal (MIM) structure capacitive, this manufacture craft can be applicable to any substrate, can improve the quality of metal-dielectric-metal (MIM) electric capacity.
Background technology
In microwave monolithic integrated circuit (MMIC), a large amount of passive devices and active device are integrated on same chip, and this is that MMIC circuit is different from one of important symbol of traditional integrated circuit.In MMIC design, passive device is often applied in the multiple electronic circuits such as matching network, DC bias networks, phse conversion and filter, and will directly affect the reliability of whole MMIC circuit as the quality of the electric capacity in passive device.In microwave regime, more electric capacity adopts and cover electric capacity is metal-dielectric-metal structure, and the unit-area capacitance value of this structure is large, can effectively dwindle chip area, is widely used in Low ESR match circuit, bypass and block isolating circuit in MMIC.
In current existing technological process, the technical process of making metal-dielectric-metal structure electric capacity is as follows:
Step 1: resist coating on substrate, adopt positive adhesive process, photoresist THICKNESS CONTROL is between 1 μ m-1.5 μ m, adopt contact photoetching machine MA6 to carry out photoetching, development, formation bottom crown figure to photoresist, now bottom crown figure place is without photoresist, remainder contains photoresist, as shown in Fig. 1 (a) schematic diagram;
Step 2: the substrate that forms figure with photoresist is put into rapid steamer, evaporation order is metal adhesion layer/metallic gold Au, thickness is formulated according to actual needs, after evaporating, full wafer is put into stripper, conventionally adopt acetone soln, due to the existence of the peripheral photoresist of bottom crown figure, along with entering of acetone, metal on photoresist is stripped from, and the metal at electric capacity bottom crown place stays, and dries up through cleaning, enter next step, as shown in Fig. 1 (b), Fig. 1 (c) process;
Step 3: the slice, thin piece full wafer completing is put into plasma reinforced chemical vapour deposition (PECVD) equipment, adopt plasma reinforced chemical vapour deposition method somatomedin, medium adopts SiO conventionally
2or Si
3n
4, growth rate is controlled at 20-40nm/min, as shown in Fig. 1 (d);
Step 4: the even glue of the full sheet of substrate that growth is had to medium, adopt positive glue, thickness is at 1 μ m-1.5 μ m, adopt contact photoetching machine MA6 photoresist to be carried out to the figure in photoetching, development, formation hole, the figure place that is hole does not have photoresist, and utilize the method for dry etching to remove the dielectric layer of tapping, conventionally adopt ion etching equipment (RIE), etch rate is controlled at 60-90nm/min, after determining that etching is clean, slice, thin piece is put into acetone, and beyond removal hole, the photoresist at figure place is as shown in Fig. 1 (e), Fig. 1 (f);
Step 5: the slice, thin piece cleaning up is coated with to positive glue photoresist, and thickness, between 2.5 μ m-3 μ m, adopts contact photoetching machine MA6 to carry out photoetching, development, formation top crown figure to photoresist, as Fig. 1 (g);
Step 6: the good slice, thin piece of photoetching is put into the instrument of sputter, full wafer sputter furling plating, as shown in Figure 1,5. be furling plating, now the full sheet of slice, thin piece covers furling plating, and the metal of furling plating adopts Ti/Au conventionally, and thickness 30nm/80nm is as shown in Fig. 1 (h);
Step 7: slice, thin piece full wafer good sputter is applied to photoresist, and suggestion adopts positive glue, THICKNESS CONTROL, at 3 μ m, adopts contact photoetching machine MA6 to carry out photoetching, development, formation top crown figure and pressure point figure to photoresist, as shown in Fig. 1 (i); ;
Step 8: slice, thin piece complete photoetching is put into electroplate liquid and electroplate, control the conducting resistance of electroplating below 3 ohm, the Current Control of plating is 2.5 × 10
-2/ mm
2, the speed of plating is 0.08-0.11 μ m/min, electrodeposited coating thickness is 2.5 μ m, completes and electroplates as shown in Fig. 1 (.j);
Step 9: the slice, thin piece that plating is completed is put into acetone, due to the existence of photoresist, sputter at the locational furling plating of photoresist along with the dissolving of photoresist glass, finally formed air bridges figure, electric capacity top crown and pressure point, as shown in Fig. 1 (k).
Fig. 2 shows the profile of metal-dielectric-metal (MIM) structure capacitive of traditional handicraft making.
But, in this method, there are some defects: first on bottom crown metallic gold, directly dielectric layer deposited, because the adhesion of gold and medium is bad, has affected the surface appearance of metal bottom crown, medium is directly deposited on the growth that can affect dielectric layer on such surface, thereby reduce the compactness of medium, reduce the quality of dielectric layer, cause the electric leakage of electric capacity larger, quality factor q value reduces, and puncture voltage is not high.Secondly, in order to improve the quality of electric capacity, the general method of improving dielectric layer that uses, for example thicken dielectric layer, use different deposition process, but can reduce specific capacitance value to thickening dielectric layer, increase chip area, adopt different deposit dielectric method can greatly improve chip manufacturing cost, increase process complexity.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of manufacture method of metal-dielectric-metal structure electric capacity, to improve the adhesion of capacitor dielectric layer and metal bottom crown, optimize electric capacity bottom crown surface appearance, improve the growth quality of capacitor dielectric layer, improve metal-dielectric-metal capacitance direct current and microwave property.
(2) technical scheme
For achieving the above object, the invention provides a kind of manufacture method of metal-dielectric-metal structure electric capacity, the method comprises:
Step 1: resist coating on substrate, and photoresist is carried out to photoetching, development, on substrate, form bottom crown figure;
Step 2: evaporate multiple layer metal on the substrate that forms bottom crown figure, form the bottom crown of metal-dielectric-metal capacitance;
Step 3: dielectric layer deposited on the substrate that forms bottom crown;
Step 4: the complete even photoresist of sheet on the substrate that is deposited with dielectric layer, photoresist is carried out to photoetching, development, on photoresist, form perforate; Then etching is removed the dielectric layer of tapping, and substrate is put into acetone soln, removes photoresist;
Step 5: the complete even photoresist of sheet on substrate, photoresist is carried out to photoetching, development, on photoresist, form top crown figure, then at substrate surface sputter furling plating;
Step 6: the substrate full wafer of sputter furling plating is applied to photoresist, photoresist is carried out to photoetching, development, form top crown figure and pressure point figure; Then substrate is put into electroplate liquid and electroplate, and the substrate that plating is completed puts into acetone soln and peel off, form air bridges figure, electric capacity top crown and pressure point.
(3) beneficial effect
The manufacture method of metal-dielectric-metal provided by the invention (MIM) structure capacitive, effectively raise the adhesion of bottom crown metal and medium by improving the manufacture method of bottom crown metal, optimized the surface appearance of bottom crown simultaneously, more be conducive to the growth of dielectric layer, thereby effectively improve the quality of medium, make electric capacity high pressure resistant, reduce leakage current, quality factor q value aspect has obtained very large improvement, the process of this invention is simple, cost is low, and repeatability is fine, and the characteristic of the capacitor element obtaining improves a lot than traditional handicraft.
Brief description of the drawings
Fig. 1 (a) is the process flow diagram of existing making metal-dielectric-metal structure electric capacity to Fig. 1 (k).
Fig. 2 is the profile of metal-dielectric-metal (MIM) structure capacitive of traditional handicraft making.
Fig. 3 is the schematic diagram that metal-dielectric-metal (MIM) structure capacitive of traditional handicraft making is carried out to microwave capacitors test.
Fig. 4 is that metal-dielectric-metal (MIM) structure capacitive that traditional handicraft is made carries out the schematic diagram that microwave capacitors quality factor q value is tested.
Fig. 5 (a) to Fig. 5 (k) be the process flow diagram according to making metal-dielectric-metal structure electric capacity of the embodiment of the present invention.
Fig. 6 is the schematic diagram according to the making domain of making metal-dielectric-metal structure electric capacity of the embodiment of the present invention.
Fig. 7 is the profile according to making metal-dielectric-metal structure electric capacity of the embodiment of the present invention.
Fig. 8 is the schematic diagram that the making metal-dielectric-metal structure electric capacity according to the embodiment of the present invention is carried out to microwave capacitors test.
Fig. 9 is the schematic diagram that the making metal-dielectric-metal structure electric capacity according to the embodiment of the present invention is carried out to the test of microwave capacitors quality factor q value.
Figure 10 is adopt new technology (the present invention) and traditional handicraft making 200 × 200 μ m
2the direct current electric leakage of metal-dielectric-metal (MIM) structure capacitive schematic diagram relatively.
Reference numeral
1 aluminium nitride (AlN) substrate;
2 metal levels (the present invention adopts titanium (Ti) layer);
3 bottom crown metals (evaporated gold Au);
4 dielectric layers (silicon nitride Si3N4);
5 furling plating metals;
6 top crowns (electrogilding Au);
7 air bridges connect top crown;
8 gold medals (Au) layer;
9 photoresists
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The manufacture method of metal-dielectric-metal structure electric capacity provided by the invention, can be applied to the making of metal-dielectric-metal on any substrate (MIM) structure capacitive, the method adopts multiple layer metal to make electric capacity bottom crown, in the time of evaporation bottom crown, adopt titanium/gold/titanium sandwich construction, and then dielectric layer deposited, reach with this adhesion of improving medium and metal, the surface appearance of optimizing metal subordinate pole plate, thereby be conducive to the growth of dielectric layer, improve metal-dielectric-metal structure electric capacity microwave and DC performance.Can improve capacitive property comprehensively.Now in conjunction with manufacture craft, the present invention is done to describe in detail:
If Fig. 5 (a) is to as shown in Fig. 5 (k), Fig. 5 (a) is the process flow diagram of making metal-dielectric-metal structure electric capacity provided by the invention to Fig. 5 (k), and the method comprises the following steps:
Step 1: resist coating on substrate, and photoresist is carried out to photoetching, development, on substrate, form bottom crown figure;
Due to the present embodiment adopt be aluminium nitride substrate, evenness ±
the first step is as traditional handicraft, resist coating on substrate, adopt positive adhesive process, photoresist THICKNESS CONTROL is between 1 μ m-1.5 μ m, adopt contact photoetching machine MA6 to carry out photoetching, development, formation bottom crown figure to photoresist, now bottom crown figure place is without photoresist, and remainder contains photoresist, as shown in Fig. 5 (a);
Step 2: evaporate multiple layer metal on the substrate that forms bottom crown figure, form the bottom crown of metal-dielectric-metal capacitance;
The substrate that forms figure with photoresist is put into rapid steamer, evaporation order is metal adhesion layer/metallic gold Au/ metal adhesion layer, thickness is formulated according to actual needs, after evaporating, full wafer is put into stripper, conventionally adopt acetone soln, due to the existence of the peripheral photoresist of bottom crown figure, along with entering of acetone, the metal on photoresist is stripped from, and the metal at electric capacity bottom crown place stays, dry up through cleaning, the bottom crown that forms metal-dielectric-metal capacitance, then enters next step, as shown in Fig. 5 (b), Fig. 5 (c);
Bottom crown and by the adhesion between the dielectric layer of deposit also need consider, simultaneously, because medium is directly deposited on bottom crown surface, good surface appearance is the guarantee of high-quality somatomedin, based on this 3 point, bottom crown selects metal A/Au/ metal B composite bed to make, and metal A layer, metal B layer here can be selected titanium, the strong metals of adhesion such as nickel metal, have selected titanium/gold/titanium in the present embodiment
or Ti/Au/Ni
carry out.
Step 3: dielectric layer deposited on the substrate that forms bottom crown;
The substrate full wafer that forms bottom crown is put into plasma reinforced chemical vapour deposition (PECVD) equipment, adopt plasma reinforced chemical vapour deposition method somatomedin, medium adopts SiO conventionally
2, Si
3n
4, growth rate is controlled at 20-40nm/min, and THICKNESS CONTROL is at 1000-3000
, as shown in Fig. 5 (d);
Step 4: the complete even photoresist of sheet on the substrate that is deposited with dielectric layer, photoresist is carried out to photoetching, development, on photoresist, form perforate; Then etching is removed the dielectric layer of tapping, and substrate is put into acetone soln, removes photoresist;
The even glue of the full sheet of substrate that growth is had to medium, adopts positive glue, and thickness, at 1 μ m-1.5 μ m, adopts contact photoetching machine MA6 to carry out photoetching, development to photoresist, forms perforate on photoresist, and tapping does not have photoresist, as shown in Fig. 5 (e); Then utilize the method for dry etching to remove the dielectric layer of tapping, conventionally adopt ion etching equipment (RIE), etch rate is controlled at 60-90nm/min, after determining that etching is clean, slice, thin piece is put into acetone soln, remove remaining photoresist, as shown in Fig. 5 (f);
Step 5: the complete even photoresist of sheet on substrate, photoresist is carried out to photoetching, development, on photoresist, form top crown figure, then at substrate surface sputter furling plating;
The slice, thin piece cleaning up is coated with to positive photoresist, and thickness, between 2.5 μ m-3 μ m, adopts contact photoetching machine MA6 to carry out photoetching, development, formation top crown figure to photoresist, as shown in Fig. 5 (g); The good slice, thin piece of photoetching is put into the instrument of sputter, and full wafer sputter furling plating, is 5. furling plating, and now the full sheet of slice, thin piece covers furling plating, and the metal of furling plating adopts Ti/Au conventionally, and thickness 30nm/80nm is as shown in Fig. 5 (h);
Step 6: the substrate full wafer of sputter furling plating is applied to photoresist, photoresist is carried out to photoetching, development, form top crown figure and pressure point figure; Then substrate is put into electroplate liquid and electroplate, and the substrate that plating is completed puts into acetone soln and peel off, form air bridges figure, electric capacity top crown and pressure point;
The substrate full wafer of sputter furling plating is applied to photoresist, generally adopt positive glue, THICKNESS CONTROL, at 3 μ m, adopts contact photoetching machine MA6 to carry out photoetching, development, formation top crown figure and pressure point figure to photoresist, as shown in Fig. 5 (i); Slice, thin piece complete photoetching is put into electroplate liquid, electroplate, control the conducting resistance of electroplating below 3 ohm, the Current Control of plating is 2.5 × 10
-2/ mm
2, the speed of plating is 0.08-0.11 μ m/min, electrodeposited coating thickness is 2.5 μ m, completes and electroplates as shown in Fig. 5 (.j); The substrate that plating is completed is put into acetone soln, due to the existence of photoresist, electroplate and peel off along with the dissolving of photoresist at the locational electrodeposited coating of photoresist, finally formed air bridges figure, electric capacity top crown and pressure point, as shown in Fig. 5 (k).Top crown metal is to be also closely connected with dielectric layer, selects titanium/gold as top crown here, to improve the adhesion of electric capacity top crown and medium.
Fig. 6 shows the schematic diagram according to the making domain of making metal-dielectric-metal structure electric capacity of the embodiment of the present invention, and Fig. 7 shows the profile according to making metal-dielectric-metal structure electric capacity of the embodiment of the present invention.
Step 7: test analysis
Table 1: microwave test result contrast table under different process
| ? | New technology test result | Traditional handicraft test result |
| Capacitance | 3.1 pico farads (pF) (4GHz) | 3.6 pico farads (pF) (4GHz) |
| Quality factor q value | 41(6GHz) | 12(6GHz) |
| Dielectric constant | 6.692(4GHz) | 6.16(4GHz) |
From DC test Figure 10, can find out, metal-dielectric-metal structure electric capacity of adopting new technology is depressed the leakage current order of magnitude that declined than traditional handicraft in same electrical, greatly improve the withstand voltage properties of device, quality factor q value also has obvious lifting in whole frequency range (0.1GHz-15.1GHz), table 1 has been listed the parameters contrast of capacitive property, as shown in Fig. 9, Fig. 4, under 6GHz, the electric capacity quality factor q value of new technology still has 41, and the slice, thin piece of traditional handicraft has dropped to 12.From Fig. 8, Fig. 3, can read capacitance, the employing of new technology makes capacitance drop to 3.1pF from 3.6pF, but also show in Fig. 8, the slice, thin piece resonance frequency of new technology is brought up to 14GHz, so more be conducive to the application of device in microwave regime, simultaneously dielectric constant also rises to 6.69 from 6.16, illustrates that the compactness of medium is better, and quality is higher.
The manufacture method of metal-dielectric-metal provided by the invention (MIM) electric capacity, effectively raise the adhesion of bottom crown metal and medium by improving the manufacture method of bottom crown metal, optimized the surface appearance of bottom crown simultaneously, more be conducive to the growth of dielectric layer, thereby effectively improve the quality of medium, make electric capacity high pressure resistant, reduce leakage current, quality factor q value aspect has obtained very large improvement, the process of this invention is simple, cost is low, and repeatability is fine, and the characteristic of the capacitor element obtaining improves a lot than traditional handicraft.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a manufacture method for metal-dielectric-metal structure electric capacity, is characterized in that, the method comprises:
Step 1: resist coating on substrate, and photoresist is carried out to photoetching, development, on substrate, form bottom crown figure;
Step 2: evaporate multiple layer metal on the substrate that forms bottom crown figure, form the bottom crown of metal-dielectric-metal capacitance;
Step 3: dielectric layer deposited on the substrate that forms bottom crown;
Step 4: the complete even photoresist of sheet on the substrate that is deposited with dielectric layer, photoresist is carried out to photoetching, development, on photoresist, form perforate; Then etching is removed the dielectric layer of tapping, and substrate is put into acetone soln, removes photoresist;
Step 5: the complete even photoresist of sheet on substrate, photoresist is carried out to photoetching, development, on photoresist, form top crown figure, then at substrate surface sputter furling plating;
Step 6: the substrate full wafer of sputter furling plating is applied to photoresist, photoresist is carried out to photoetching, development, form top crown figure and pressure point figure; Then substrate is put into electroplate liquid and electroplate, and the substrate that plating is completed puts into acetone soln and peel off, form air bridges figure, electric capacity top crown and pressure point.
2. the manufacture method of metal-dielectric-metal structure electric capacity according to claim 1, is characterized in that, substrate described in step 1 adopt aluminium nitride substrate, evenness ±
.
3. the manufacture method of metal-dielectric-metal structure electric capacity according to claim 1, it is characterized in that, described in step 2, on the substrate that forms bottom crown figure, evaporate multiple layer metal, that the substrate that forms bottom crown figure with photoresist is put into rapid steamer, evaporation order is metal adhesion layer/metallic gold Au/ metal adhesion layer, after evaporating, full wafer is put into stripper, adopt acetone soln, by the metal-stripping on photoresist, and the metal at electric capacity bottom crown place stays, dry up through cleaning, form the bottom crown of metal-dielectric-metal capacitance.
4. the manufacture method of metal-dielectric-metal structure electric capacity according to claim 1, it is characterized in that, described in step 3, forming dielectric layer deposited on the substrate of bottom crown, that the substrate full wafer that forms bottom crown is put into plasma reinforced chemical vapour deposition equipment, adopt plasma reinforced chemical vapour deposition method somatomedin layer, dielectric layer adopts SiO
2or Si
3n
4, growth rate is controlled at 20-40nm/min, and thickness of dielectric layers is controlled at
5. the manufacture method of metal-dielectric-metal structure electric capacity according to claim 1, is characterized in that, described in step 4 on the substrate that is deposited with dielectric layer the complete even photoresist of sheet, adopt positive glue, thickness is at 1 μ m-1.5 μ m.
6. the manufacture method of metal-dielectric-metal structure electric capacity according to claim 1, it is characterized in that, etching described in step 4 is removed the dielectric layer of tapping, to utilize the method for dry etching to remove the dielectric layer of tapping, adopt ion etching equipment, etch rate is controlled at 60-90nm/min.
7. the manufacture method of metal-dielectric-metal structure electric capacity according to claim 1, is characterized in that, described in step 5 on substrate the complete even photoresist of sheet, adopt positive glue, thickness is between 2.5 μ m-3 μ m.
8. the manufacture method of metal-dielectric-metal structure electric capacity according to claim 1, it is characterized in that, described in step 5 at substrate surface sputter furling plating, that the good substrate of photoetching is put into the instrument of sputter, full wafer sputter furling plating, the metal of furling plating adopts Ti/Au, thickness 30nm/80nm.
9. the manufacture method of metal-dielectric-metal structure electric capacity according to claim 1, is characterized in that, described in step 6, the substrate full wafer of sputter furling plating is applied to photoresist, adopts positive glue, and THICKNESS CONTROL is at 3 μ m.
10. the manufacture method of metal-dielectric-metal structure electric capacity according to claim 1, is characterized in that, described in step 6, substrate is put into electroplate liquid and electroplates, and the conducting resistance of plating is below 3 ohm, and the Current Control of plating is 2.5 × 10
-2/ mm
2, the speed of plating is 0.08-0.11 μ m/min, electrodeposited coating thickness is 2.5 μ m.
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| CN201410156492.3A CN103928301A (en) | 2014-04-18 | 2014-04-18 | Method for manufacturing metal-dielectric-metal structure capacitor |
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|---|---|---|---|
| CN201410156492.3A CN103928301A (en) | 2014-04-18 | 2014-04-18 | Method for manufacturing metal-dielectric-metal structure capacitor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109607474A (en) * | 2018-11-19 | 2019-04-12 | 中国科学技术大学 | Superconductor Vacuum bridge and preparation method thereof |
| CN109860147A (en) * | 2019-02-22 | 2019-06-07 | 福建省福联集成电路有限公司 | A kind of stacked capacitor manufacturing method and semiconductor devices |
| CN111399348A (en) * | 2020-04-17 | 2020-07-10 | 淮北师范大学 | Method for inhibiting collapse and adhesion of photoresist pattern structure |
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| CN109860147A (en) * | 2019-02-22 | 2019-06-07 | 福建省福联集成电路有限公司 | A kind of stacked capacitor manufacturing method and semiconductor devices |
| CN111399348A (en) * | 2020-04-17 | 2020-07-10 | 淮北师范大学 | Method for inhibiting collapse and adhesion of photoresist pattern structure |
| CN111399348B (en) * | 2020-04-17 | 2023-03-31 | 淮北师范大学 | Method for inhibiting collapse and adhesion of photoresist pattern structure |
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