CN109607474A - Superconductor Vacuum bridge and preparation method thereof - Google Patents
Superconductor Vacuum bridge and preparation method thereof Download PDFInfo
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- CN109607474A CN109607474A CN201910070966.5A CN201910070966A CN109607474A CN 109607474 A CN109607474 A CN 109607474A CN 201910070966 A CN201910070966 A CN 201910070966A CN 109607474 A CN109607474 A CN 109607474A
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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Abstract
The invention discloses a kind of Superconductor Vacuum bridge and preparation method thereof, the preparation method include: on substrate spin coating LOR material as LOR sacrificial layer；The first photoresist of spin coating on LOR sacrificial layer, carries out mask exposure, which defines the position of bridge pier；The first development is carried out, the three-dimensional structure of bridge pier and bridge arch is obtained；Using the dissolution sex differernce of the first photoresist and LOR material in acetone, unexposed photoresist on bridge arch is removed；Set temperature is carried out to the LOR material at bridge arch to be heated to reflux, and obtains edge circular arch bridge arch；Successively spin coating LOR layers and the second photoresist on edge circular arch arch bridge；The second photoresist is exposed, and carries out the second development；Superconducting metal layer is deposited；And the structure that the LOR sacrificial layer and non-superconducting bridge location below the layer bridge arch of superconducting metal set place is discharged, obtain Superconductor Vacuum bridge.This method does not need to carry out pan-exposure and the technique using developer solution removal photoresist, simple process and can prepare 10 microns or more of Superconductor Vacuum bridge.
Description
Technical field
The disclosure belongs to the preparation of micron superconducting circuit and an applied technical field, is related to a kind of Superconductor Vacuum bridge and its preparation side
Method.
Background technique
Air bridges are a kind of circuit structures, it is a kind of mode that the bridging of planar circuit is realized in a manner of three-dimensional bridge shape.
It, can be with the operational frequency range of extended circuit due to using air as the dielectric between two conductors.With at present without air
The route of bridge is compared, and the connection of slab guide ground wire may be implemented in it, and passes crosswise slab guide, can enhance circuit
Stability, and complicated circuit construction is constructed, it is of great significance in micron superconductive microwave circuit.
For superconduction route, be generally operational in vacuum and low temperature under, it is therefore desirable to prepare Superconductor Vacuum bridge.For being based on
The superconduction route of aluminium film generallys use aluminium as Superconductor Vacuum bridge.But aluminium vacuum bridge haves the shortcomings that contact strength is weak, usually
Not competent multiple chip gluing and process of removing photoresist, so that the length of vacuum bridge is very limited.
It is commonly used in the art poly- in MEMS (MEMS, Micro-Electro-Mechanical System)
Polydimethyl glutarimide (PMGI, polymethylglutarimide) makes air bridges and cantilever as sacrificial release layers.Make
Use PMGI as in the preparation method of sacrificial layer, there are the following problems: first, it needs to be masked photoresist and exposes and show
Shadow, in actual technique, lithographic glue is difficult to control without regard to PMGI layers；Second, it is also necessary to PMGI be carried out deep
Ultraviolet pan-exposure and developed using developer solution, is removed photoresist using the developer solution in the developing process of PMGI；On
It states process requirement photoresist and PMGI are double exposed and developed respectively, also relates to deep ultraviolet pan-exposure and exposure mask exposes
Light, degumming process is cumbersome and uncontrollable development degree, and be easy to produce causes PMGI also to be shown since developing time control is improper
It is inconsistent to lead to the problem of bridge arch height for the dissolution of shadow liquid；Third, while the parameter for meeting development PMGI and removal photoresist cannot
Therefore preparing the vacuum bridge that length is more than 10 microns for the preparation of Superconductor Vacuum bridge, uses PMGI as sacrificial layer
Preparation method no longer be applicable in.
To sum up, it is necessary to propose a kind of method for being suitble to prepare longer (10 microns or more) Superconductor Vacuum bridge, simple process.
Summary of the invention
(1) technical problems to be solved
Present disclose provides a kind of Superconductor Vacuum bridges and preparation method thereof, at least partly to solve technology set forth above
Problem.
(2) technical solution
According to one aspect of the disclosure, a kind of preparation method of Superconductor Vacuum bridge is provided, comprising: spin coating on substrate
LOR material is as LOR sacrificial layer；The first photoresist of spin coating on LOR sacrificial layer carries out mask exposure, mask exposure definition
The position of bridge pier out；The first development is carried out, the three-dimensional structure of bridge pier and bridge arch is obtained；Existed using the first photoresist and LOR material
Dissolution sex differernce in acetone removes unexposed photoresist on bridge arch；Set temperature heating is carried out to the LOR material at bridge arch
Reflux obtains edge circular arch bridge arch；Successively spin coating LOR layers and the second photoresist on edge circular arch arch bridge；Exposure second
Photoresist, and carry out the second development；Superconducting metal layer is deposited；And release superconducting metal layer bridge arch below LOR sacrificial layer and
Non-superconducting bridge location sets the structure at place, obtains Superconductor Vacuum bridge.
In some embodiments of the present disclosure, in the step of carrying out the first development, obtaining the three-dimensional structure of bridge pier and bridge arch,
The first development is carried out, the first photoresist and LOR sacrificial layer at the pier location of corresponding mask exposure are in the first developing process
In the removal of developed liquid, to obtain the three-dimensional structure of bridge pier and bridge arch.
In some embodiments of the present disclosure, the second photoresist is exposed, and in the step of carrying out the second development, exposure second
Photoresist, corresponds to the bridge pier of exposure and the second photoresist at bridge arch position and LOR layers developed in the second developing process
Liquid removal.
In some embodiments of the present disclosure, the second photoresist of exposure is exposed using maskless laser writing technology.
In some embodiments of the present disclosure, the second photoresist of exposure is exposed using mask plate.
In some embodiments of the present disclosure, the developer solution of the first development are as follows: MF319 or AZ400K；And/or second is aobvious
The developer solution of shadow are as follows: MF319 or AZ400K.
In some embodiments of the present disclosure, set temperature is between 250 DEG C -300 DEG C.
In some embodiments of the present disclosure, the first photoresist and the second photoresist are S18 sequence of photolithography glue.
LOR sacrificial layer and non-superconducting bridge location in some embodiments of the present disclosure, below the layer bridge arch of release superconducting metal
The method for setting the structure at place are as follows: be soaked in the knot that release LOR sacrificial layer and non-superconducting bridge location in lytic agent Remover PG set place
Structure.
A kind of Superconductor Vacuum bridge another aspect of the present disclosure provides, wherein the Superconductor Vacuum bridge is by the disclosure
The preparation method for any Superconductor Vacuum bridge mentioned is made.
(3) beneficial effect
It can be seen from the above technical proposal that the Superconductor Vacuum bridge and preparation method thereof that the disclosure provides, has with following
Beneficial effect:
(1) common using stripping technology photoresist (LOR, the Lift-off-resist) material of discovery and micro-nano manufacture
Existing dissolution sex differernce between photoresist, i.e., common photoresist is soluble in acetone reagent, and LOR is fairly insoluble for acetone
Characteristic, spin coating photoresist is gone forward side by side line mask exposure on LOR sacrificial layer, photoresist and LOR at the pier location of corresponding exposure
Developed liquid removal, obtains the three-dimensional structure of bridge pier and bridge arch, and the dissolution sex differernce directly by utilizing photoresist and LOR
Photoresist is removed using acetone；It does not need to carry out pan-exposure and the technique using developer solution removal photoresist, inherently avoid
LOR is dissolved by the solvent the problem for leading to control bridge arch high consistency difference in the developing process after pan-exposure, and
Without pan-exposure equipment and multidevelopment process, very great Cheng has been carried out from the angle that process equipment uses and process flow operates
The simplification of degree；
(2) it is directed to superconductive device, common superconductor is Al, but Al film can be vivaciously formed at normal temperature because of property
One layer of fine and close oxide layer, therefore this case ensures before the layer of deposition superconducting metal in the preparation process of Superconductor Vacuum bridge
The removal of Al layer surface oxide layer, to ensure the superconducting characteristic of the vacuum bridge；
(3) in terms of sacrificial layer release, because Al film character is active, using the lower glue-dispenser of the temperature requirement that removes photoresist
Lytic agent of the Remover PG as LOR sacrificial layer, to have device to superconducting core on piece during reducing sacrificial layer release
Performance influence.
Detailed description of the invention
Fig. 1 is the preparation method flow chart of the Superconductor Vacuum bridge according to shown in one embodiment of the disclosure.
Fig. 2 is according to the corresponding structural schematic diagram of each step of preparation method process shown in FIG. 1.
Table 1 is the size and shape parameter for the Superconductor Vacuum bridge being prepared according to shown in one embodiment of the disclosure.
[symbol description]
11- substrate；12-LOR sacrificial layer；
The first photoresist of 13-；The first mask plate of 14-；
15- bridge pier；121- bridge arch；
The unexposed photoresist of 131-；
Pattern after the edge 122- circular arch bridge arch/reflux；
161-LOR layers；The second photoresist of 162-；
The second mask plate of 17-；The superconducting metal 18- layer.
Specific embodiment
Present disclose provides a kind of Superconductor Vacuum bridges and preparation method thereof, and exposure mask is used on LOR sacrificial layer and photoresist
Figure and the position of the three-dimensional structure and progress lithographic definition superconduction bridge of exposure production bridge pier and bridge arch, realize superconduction gold
Belong to the deposition on bridge pier and bridge arch, obtains Superconductor Vacuum bridge after removal sacrificial layer；By utilizing photoresist and LOR in acetone
In dissolution sex differernce remove photoresist, and deposition superconducting metal layer before go oxide film dissolving guarantee superconducting characteristic, do not need
Pan-exposure and the technique using developer solution removal photoresist are carried out, developing process of the LOR after pan-exposure is inherently avoided
In be dissolved by the solvent cause to bridge arch high consistency control difference problem, and be not necessarily to pan-exposure equipment and multidevelopment mistake
Journey is significantly simplified from the angle that process equipment uses and process flow operates.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.In the disclosure, " photoresist " refers to common photoresist, does not include LOR photoetching
Glue.Term " between " includes endpoint value.
In the prior art, PMGI is used to be broadly divided into following steps as the preparation method of sacrificial layer:
(1) spin coating multilayer PMGI, and spin coating photoresist；
(2) exposure is masked to photoresist and developed；
(3) deep ultraviolet pan-exposure is carried out to PMGI；
(4) develop to PMGI, while the developed liquid removal of photoresist；
(5) it flows back for PMGI layers；
(6) spin coating photoresist；
(7) mask exposure photoresist；
(8) lithographic glue；
(9) deposited metal layer；
(10) PMGI, photoresist and upper layer metal are removed, bridge structure is obtained.
Use PMGI that can be used to prepare the vacuum bridge less than 10 micrometer lengths as the preparation method of sacrificial layer, but it is right
For the preparation of Superconductor Vacuum bridge, uses PMGI to be no longer applicable in as the preparation method of sacrificial layer, is embodied in:
1, in (2) step, in actual technique, lithographic glue is difficult to control without regard to PMGI layers；?
(3) it also needs to develop to PMGI progress deep ultraviolet pan-exposure and using developer solution in step and (4) step, in the development of PMGI
Photoresist is removed using the developer solution in the process；Above-mentioned process requirement is double exposed and is shown to photoresist and PMGI respectively
Shadow, also relates to deep ultraviolet pan-exposure and mask exposure, and degumming process is cumbersome and uncontrollable development degree, be easy to produce by
In developing time control it is improper cause PMGI to be also dissolved by the developing, leads to the problem of bridge arch highly it is inconsistent；
2, meeting development PMGI to prepare length with the parameter for removing photoresist simultaneously in (4) step is more than 10 micro-
The vacuum bridge of rice；
3, when metal is aluminium in (9) step, oxide layer cannot be guaranteed superconducting contact in the superconducting metal of deposition.
By the analysis to the prior art, the disclosure proposes a kind of Superconductor Vacuum bridge and preparation method thereof, wherein superconduction is true
Using LOR as sacrificial layer in the preparation method of empty bridge, and when selecting LOR as sacrificial layer, overcome by design technology
LOR is dissolved by the solvent the defect for leading to control bridge arch high consistency difference in the developing process after pan-exposure, and makes
Standby technique, which realizes, significantly to be simplified.
In first exemplary embodiment of the disclosure, a kind of preparation method of Superconductor Vacuum bridge is provided.
Fig. 1 is the preparation method flow chart of the Superconductor Vacuum bridge according to shown in one embodiment of the disclosure.Fig. 2 is according to Fig. 1
Shown in the corresponding structural schematic diagram of each step of preparation method process.
Referring to figs. 1 and 2, the preparation method of the Superconductor Vacuum bridge of the disclosure, comprising:
Step s11: spin coating LOR material is as LOR sacrificial layer on substrate；
In the present embodiment, substrate 11 is first cleaned, makes the clean surface of substrate 11, in such as Fig. 2 of substrate 11 shown in (a)；It is serving as a contrast
The characteristics of spin coating LOR material is as sacrificial layer 12 on bottom 11, and the disclosure is in order to protrude the sacrificial layer, is known as LOR for the sacrificial layer
Sacrificial layer 12, the LOR sacrificial layer 12 with a thickness of H, thickness H determines the height of the bridge arch of Superconductor Vacuum bridge, in conjunction in Fig. 2
(b) and shown in (j), in one embodiment, the LOR of spin coating can be single-layer or multi-layer.
Step s12: the first photoresist of spin coating on LOR sacrificial layer carries out mask exposure, which defines bridge pier
Position；
In the present embodiment, in order to make exposure area be easy dissolution in developer solution, resolution ratio is improved, the first photoresist is preferred
Positive photoresist, here by taking S1805 photoresist as an example, those skilled in the art can carry out the selection of positive photoresist according to actual needs, other
The positive photoresist of type is also within the protection scope of the disclosure.
The first photoresist of spin coating 13 on LOR sacrificial layer 12 carries out mask exposure using the first mask plate 14 as exposure mask,
The mask exposure defines the position of bridge pier；Wherein, the pattern of the first mask plate 14 referring to fig. 2 in (c) illustrated, exposure area
It is defined as the position of bridge pier, with the signal of packless block in figure, non-exposed areas is defined as the position of bridge arch, with filling in figure
There is the block of oblique line to illustrate.
Step s13: the first development, the first photoresist and LOR sacrificial layer at the pier location of corresponding mask exposure are carried out
Developed liquid removal, obtains the three-dimensional structure of bridge pier and bridge arch；
In the present embodiment, developer solution uses MF319 or AZ400K, since photoresist has photobehavior, photoresist exposure
After be dissolved in developer solution, LOR photoresist non-photo-sensing but developer solution is dissolved in, therefore, using developer solution by the pier location of mask exposure
First photoresist and LOR the sacrificial layer removal at place, correspond to the first photoresist and LOR sacrificial layer at the pier location of mask exposure
Structure after the removal of developed liquid referring to fig. 2 in shown in (d), obtain the corresponding space of a bridge pier 15, be left LOR sacrificial layer and make
For bridge arch 121, and it is located at unexposed photoresist 131 on bridge arch 121.
Step s14: it using the dissolution sex differernce of the first photoresist and LOR material in acetone, removes unexposed on bridge arch
Photoresist；
Find that LOR material and micro-nano manufacture have dissolution sex differernce, the micro-nano metric system between common photoresist through overtesting
It makes common photoresist and is soluble in acetone reagent, and LOR material is fairly insoluble for acetone, is based on the dissolution sex differernce, utilizes third
Ketone removal is located at the unexposed photoresist 131 on bridge arch 121, obtained structure referring to fig. 2 in shown in (e).
The setting of step s14 is due to also to be heated in subsequent technique, and the temperature tolerance of photoresist is poor, after being unfavorable for
Phase removing, therefore dissolution sex differernce is utilized, photoresist unexposed on bridge arch is removed using acetone.
Step s15: set temperature is carried out to the LOR material at bridge arch and is heated to reflux, edge circular arch bridge arch is obtained；
In the present embodiment, at bridge arch LOR material carry out set temperature be heated to reflux, the set temperature for example between
Between 250 DEG C -300 DEG C, shown in the set temperature of the disclosure is not limited to the embodiment, anyone skilled in the art are according to reality
Need to carry out the reasonable temperature of adaptability setting within protection scope.Using the temperature tolerance and reflux characteristic of LOR material, obtain
Edge circular arch bridge arch 122, the three-dimensional appearance of the edge circular arch bridge arch 122 referring to fig. 2 in shown in (f).
Step s16: successively spin coating LOR layers and the second photoresist on edge circular arch arch bridge；
On edge circular arch arch bridge 122 successively the structure of spin coating LOR layer 161 and the second photoresist 162 referring to fig. 2 in
(g) shown in, in the present embodiment, the second photoresist is by taking photoresist S1813 as an example.
Step S17: the second photoresist of exposure, and carry out the second development, the bridge pier of corresponding exposure and at bridge arch position the
Two photoresists and LOR layers of developed liquid removal；
In the present embodiment, the second photoresist is exposed using the second mask plate 17 as exposure mask, second mask plate 17
Pattern referring to fig. 2 in shown in (h), exposure area is defined as the position of bridge pier and bridge arch, with the signal of packless block in figure,
Non-exposed areas is defined as non-superconducting bridge location and sets, and is illustrated in figure with the block filled with oblique line.
In other embodiments, it can also be exposed, not needed using as in Fig. 2 using maskless laser writing technology
(h) exposure of the second photoresist can be realized in the second mask plate 17 shown in.Progress second is aobvious after having exposed the second photoresist
Shadow, in the present embodiment, developer solution will be right using developer solution based on the reason identical as step s13 using MF319 or AZ400K
The second photoresist and LOR layers of removal at the bridge pier that should be exposed and bridge arch position, remove at the bridge pier and bridge arch position of exposure
Structure after second photoresist and LOR layers is the structure of (i) without superconducting metal layer 18 in Fig. 2.
Step s18: vapor deposition superconducting metal layer；
The material of superconducting metal layer can be aluminium, titanium, niobium and other superconductors, which can be single layer superconduction
Material or two layers and the different superconductor of multilayer.It is preferred real one in order to enhance the stability of vacuum bridge in the subsequent process
It applies in example, using the bimetallic superconduction bridge technique of 200nmAl+900nmTi.In the present embodiment, the material of superconducting metal layer is Al,
The removal for ensuring Al layer surface oxide layer before the layer of vapor deposition superconducting metal, to ensure the superconducting characteristic of the vacuum bridge.One
In example, in order to guarantee that contact of the Superconductor Vacuum bridge with base patterns is superconducting contact, carried out before ultrahigh vacuum evaporating Al film
The physical bombardment of controllable Ar ion had both ensured that the oxide layer of Al layer surface can be removed, to realize superconducting contact, and guaranteed
Defect will not be caused to Al layers of substrate itself and bring the influence of device performance.In other examples, in order to guarantee Superconductor Vacuum
Bridge contact with base patterns is superconducting contact, can use a corrosive liquid and removes removing oxide layer, which does not influence other
Structure and photoresist.
The vapor deposition superconducting metal layer 18 after the second development, the LOR that superconducting metal layer 18 is located in bridge arch position sacrifices
On layer and and substrate contact, form solid superconducting bridge, referring to fig. 2 in shown in (i), wherein arrow indicates that exposure mask exposes
The direction of illumination of light, the bridge arch height of the superconducting bridge depend on the height of LOR sacrificial layer 12.
Step s19: LOR sacrificial layer and non-superconducting bridge location below the layer bridge arch of release superconducting metal set the structure at place, obtain
Superconductor Vacuum bridge；
In terms of device performance angle, require (to be situated between bridge and superconduction route below for vacuum in device work
Electric constant=1), i.e., Superconductor Vacuum bridge requires sacrificial layer to be completely removed in release process, and dissolves the solvent of sacrificial layer not
Be also easy to produce residue, at the same discharge solvent for use also can not with react between the superconduction route that has prepared.The present embodiment
In, because Al film character is active, therefore first use chemical property for the neutral lower glue-dispenser Remover PG of the temperature requirement that removes photoresist
As the lytic agent of LOR sacrificial layer, and the structure at the non-superconducting bridge location place of setting also is soaked in the lytic agent and is removed；But because
Remover PG itself is not volatile, can not utilize Remover directly by vacuum bridge from the molten fluid drying of Remover PG
PG and organic solvent well dissolve each other, by way of solution replacement, by the Superconductor Vacuum bridge sample prepared from Remover
It is replaced into the organic solvent such as aqueous isopropanol for being easy to volatilize in PG solution, and passes through high-purity N2Enable isopropanol volatile dry from
And obtain the structure of the reliable Superconductor Vacuum bridge of performance, referring to fig. 2 in shown in (j), during can effectively reduce sacrificial layer release
The performance for having device to superconducting core on piece influences.
LOR as sacrificial layer is still easily removed after thermal reflux and physical attacks etching, and in Superconductor Vacuum bridge
Release during be not easy to form residual；Superconductor Vacuum bridge may make taking out from solution by choosing suitable substitutional solution
Both other dielectric layers will not have been introduced in dry process leads to the reduced performance of superconductive device, will not lead because capillary force influences
Absorption is caused to collapse (there will be the risks that absorption collapses if with aqueous solution displacement).
The length of obtained Superconductor Vacuum bridge can be up to 10 microns or more, in one example, using shown in the present embodiment
The preparation method of Superconductor Vacuum bridge, when LOR spin coating is with a thickness of 2.4 μm, 60 μm of available span, bridge arch height are (also referred to as
Bridge is high or sagitta) the Superconductor Vacuum bridge that is 0.8 μm；In another example, under same LOR thickness condition, available span is
36 μm, the Superconductor Vacuum bridge that bridge arch height is 2 μm.
The pattern of Superconductor Vacuum bridge is mainly determined by high two parameters of span and bridge, and the two parameters and LOR sacrificial layer
Pattern 122 after 12 size and its reflux (reflow) is directly related.LOR set temperature (such as 250 DEG C -300 DEG C) it
Between carry out the Thermoplastic flow process that heat reflux is high molecular material, the pattern after reflux is in because being influenced by surface tension
Existing dome-shaped.However after the thickness of the span of bridge and sacrificial layer ratio is greater than certain proportion, the influence of heat reflux is not enough in bridge
Circular arch is formed at arch, under the action of surface tension, the LOR of bridge arch midpoint can be former to flowing to form circular arc at step
LOR height at bridge arch midpoint can be reduced with the loss of high molecular material, to generate M type bridge arch.This M type bridge
Encircle the height that the height in bridge center is far below applied LOR sacrificial layer 12, also far below the height near bridge pier.With rotation
The reduction of LOR thickness is applied, the sagitta of large span vacuum bridge sharply declines, and on the one hand can reduce and introduce excessive parasitic capacitance (arch
At 0.9 μm of high <), the performance of device is reduced, on the other hand can influence to lead to bridge because of the solution surface tension during release
(the especially center of M type bridge arch) is directly adsorbed with underlying metal in face, can not obtain hanging Superconductor Vacuum bridge structure.
In scheme for preparing as sacrificial layer Superconductor Vacuum bridge using PMGI, by PMGI itself energy spin coating thickness
Limited generally less than 1.5 μm are spent, when 10 μm of span >, the height that will lead to vacuum bridge is influenced by the M type bridge arch after flowing back
The absorption of too low or even bridge floor collapses.And LOR has plurality of specifications, by selecting suitable specification that its spin coating thickness can be made to reach 5 μ
M or more, to obtain the bigger Superconductor Vacuum bridge of span.
In second exemplary embodiment of the disclosure, a kind of Superconductor Vacuum as made from above-mentioned preparation method is proposed
Bridge.
In the present embodiment, the size and shape of the Superconductor Vacuum bridge obtained using above-mentioned preparation method is as shown in table 1.At this
In embodiment, under the conditions of same process, such as when the spin coating of LOR sacrificial layer 12 is with a thickness of 2.4 μm, obtain with different spans
Superconductor Vacuum bridge pattern and height, wherein with bridge arch lowest part calculate sagitta.
What the disclosure proposed is had the advantages that using LOR as the preparation method of the Superconductor Vacuum bridge of sacrificial layer
1, processing compatibility is strong, LOR as common technique stripping photoresist, can according to demand with a variety of photosensitive high polymers
Material (positive photoresist, negtive photoresist etc.) is used cooperatively；
2, process flow simplifies, it is only necessary to which two of the exposure steps development cooperates heat reflux and acetone to remove photoresist；
3, bridge arch height will not be influenced by degumming process, only be determined by LOR thickness and bridge arch span, process consistency
By force；
4, reliability of technology is high: the residue under bridge arch had both can be effectively controlled in the release of Superconductor Vacuum bridge and drying process,
Will not influence the pattern of bridge, can effective guarantee Superconductor Vacuum bridge qualification rate；
5, the optional range of the dimensional parameters of Superconductor Vacuum bridge is big, is applicable to the design requirement of different superconductive devices.
In conclusion present disclose provides a kind of Superconductor Vacuum bridges and preparation method thereof, on LOR sacrificial layer and photoresist
The three-dimensional structure of bridge pier and bridge arch is made using mask exposure and carries out figure and the position of lithographic definition superconduction bridge, it is real
Existing deposition of the superconducting metal on bridge pier and bridge arch, removal sacrificial layer obtain Superconductor Vacuum bridge later；By using photoresist and
The dissolution sex differernce of LOR in acetone removes photoresist, and goes oxide film dissolving to guarantee that superconduction is special before the layer of deposition superconducting metal
Property, it does not need to carry out pan-exposure and the technique using developer solution removal photoresist, inherently avoids LOR after pan-exposure
Be dissolved by the solvent the problem for leading to that difference is controlled bridge arch high consistency in developing process, and without pan-exposure equipment and more
Secondary developing process is significantly simplified from the angle that process equipment uses and process flow operates；In sacrificial layer
Release aspect, the dissolution because Al film character is active, using the lower PG remover of the temperature requirement that removes photoresist as LOR sacrificial layer
Agent, so that the performance for having device to superconducting core on piece during reducing sacrificial layer release influences.
It should be noted that the direction term mentioned in embodiment, such as "upper", "lower", "front", "rear", "left", "right"
Deng being only the direction with reference to attached drawing, not be used to limit the protection scope of the disclosure.Through attached drawing, identical element is by identical
Or similar appended drawing reference indicates.When may cause understanding of this disclosure and cause to obscure, conventional structure or structure will be omitted
It makes.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference symbol between parentheses should not be configured to the limit to claim
System.
The word of ordinal number such as " first ", " second ", " third " etc. used in specification and claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Sequence in sequence or manufacturing method, the use of those ordinal numbers are only used to enable an element and another tool with certain name
Clear differentiation can be made by having the element of identical name.
Furthermore word "comprising" or " comprising " do not exclude the presence of element or step not listed in the claims.Positioned at member
Word "a" or "an" before part does not exclude the presence of multiple such elements.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in the above institute for the sequence of above-mentioned steps
Column, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, that
This mix and match is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be freely combined
Form more embodiments.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of preparation method of Superconductor Vacuum bridge, comprising:
Spin coating LOR material is as LOR sacrificial layer on substrate；
The first photoresist of spin coating on LOR sacrificial layer, carries out mask exposure, which defines the position of bridge pier；
The first development is carried out, the three-dimensional structure of bridge pier and bridge arch is obtained；
Using the dissolution sex differernce of the first photoresist and LOR material in acetone, unexposed photoresist on bridge arch is removed；
Set temperature is carried out to the LOR material at bridge arch to be heated to reflux, and obtains edge circular arch bridge arch；
Successively spin coating LOR layers and the second photoresist on edge circular arch arch bridge；
The second photoresist is exposed, and carries out the second development；
Superconducting metal layer is deposited；And
LOR sacrificial layer and non-superconducting bridge location below the layer bridge arch of release superconducting metal set the structure at place, obtain Superconductor Vacuum bridge.
2. preparation method according to claim 1, wherein it is described to carry out the first development, obtain the three-dimensional of bridge pier and bridge arch
In the step of structure, the first development is carried out, the first photoresist and LOR sacrificial layer at the pier location of corresponding mask exposure exist
Developed liquid removal in first developing process, to obtain the three-dimensional structure of bridge pier and bridge arch.
3. preparation method according to claim 1, wherein the second photoresist of the exposure, and carry out the step of the second development
In rapid, expose the second photoresist, the bridge pier of corresponding exposure and the second photoresist at bridge arch position and LOR layers are developed second
Developed liquid removal in the process.
4. preparation method according to claim 1, wherein the second photoresist of the exposure uses maskless laser direct-writing skill
Art is exposed.
5. preparation method according to claim 1, wherein the second photoresist of the exposure is exposed using mask plate.
6. preparation method according to claim 1, wherein
The developer solution of first development are as follows: MF319 or AZ400K；And/or
The developer solution of second development are as follows: MF319 or AZ400K.
7. preparation method according to claim 1, wherein the set temperature is between 250 DEG C -300 DEG C.
8. preparation method according to claim 1, wherein first photoresist and the second photoresist are S18 series light
Photoresist.
9. preparation method according to claim 1, wherein the LOR sacrificial layer below the release superconducting metal layer bridge arch
And the method that non-superconducting bridge location sets the structure at place are as follows:
It is soaked in the structure that release LOR sacrificial layer and non-superconducting bridge location in lytic agent Remover PG set place.
10. a kind of Superconductor Vacuum bridge, wherein Superconductor Vacuum bridge preparation method system as described in any one of claims 1 to 9
?.
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| CN113300129A (en) * | 2020-02-21 | 2021-08-24 | Iqm芬兰有限公司 | Air bridge for connecting superconducting chips and method for preparing superconducting chip having air bridge |
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| CN114005929B (en) * | 2021-11-19 | 2023-03-24 | 合肥本源量子计算科技有限责任公司 | Air bridge preparation method, mask for preparing air bridge and quantum device |
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