CN103926689B - MEMS reflecting systems array, MEMS reflecting systems and preparation method thereof - Google Patents
MEMS reflecting systems array, MEMS reflecting systems and preparation method thereof Download PDFInfo
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- CN103926689B CN103926689B CN201310009779.9A CN201310009779A CN103926689B CN 103926689 B CN103926689 B CN 103926689B CN 201310009779 A CN201310009779 A CN 201310009779A CN 103926689 B CN103926689 B CN 103926689B
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Abstract
The invention provides a kind of MEMS reflecting systems, the preparation method of the reflecting system and reflecting system array including multiple reflecting systems.After existing reflecting system uses repeatedly, because overarm and barrier sheet whole surface all cover dielectric layer, during fixed electrode, speculum apply voltage power supply, because speculum and barrier sheet constantly collide, the dielectric layer portions on barrier sheet are caused to produce trapped charge, the trapped charge can produce Electrostatic Absorption phenomenon, and then speculum absorption can be caused can not to be rebounded on barrier sheet.To avoid above mentioned problem, the present invention proposes at least to remove the dielectric layer on the surface at the position directly contacted with speculum on barrier sheet so that the portion faces are conductive material, avoid Electrostatic Absorption between the two.
Description
Technical field
The invention belongs to field of semiconductor manufacture, more particularly to MEMS reflecting systems array, MEMS reflecting systems and its
Preparation method.
Background technology
Since later 1980s, with MEMS（Micro-Electro-Mechanical-
System, MEMS）The development of technology, some semiconductor devices realize microminaturization.Such as projecting apparatus, Helmet Mounted Display
（Head Mounted Display）Deng digital micro display chip（Digital Mico Display, DMD）, it can shorten
The distance between chip and camera lens, are extensively studied at present.
Fig. 1 show the MEMS reflecting systems of existing digital micro display chip, and it includes cavity 1a, is formed in cavity 1a
Interior bottom electrode 11, hanging crossbeam 12 and the speculum 13 being supported on crossbeam 12.Its course of work is：It is in office electric once
Apply electrical opposite voltage between pole 11 and speculum 13, speculum 13 is attracted by bottom electrode 11, drive crossbeam 12 reverse and
The deflection of itself is realized, equilbrium position is returned in the presence of the twisting resistance of crossbeam 12 after dead electricity.
In said process, speculum 13, which is possible to excessive deflection, to be caused to encounter bottom electrode 11 and causes short circuit, above-mentioned to solve
Problem, have and propose to set barrier sheet in the termination of crossbeam 12（Fig. 1 is not shown）.
The crossbeam 12 is generally layer of metal, and it has certain elasticity, but the metal level is excessively easily deformed, to strengthen it
Rigidity（stiffness）, one dielectric layer is typically set thereon.Above-mentioned reflecting system is in manufacturing process, barrier sheet and horizontal stroke
Beam 12 is typically formed in same technique, thus also has dielectric layer on the metal level of barrier sheet.
However, above-mentioned MEMS reflecting systems are after a number of uses, it may appear that speculum adsorbs the phenomenon on barrier sheet,
Equilbrium position can not be returned to.
In view of the above-mentioned problems, the present invention proposes a kind of new MEMS reflecting systems array, MEMS reflecting systems and its making
Method is solved.
The content of the invention
The technical problem to be solved in the present invention is that the speculum easily absorption of MEMS reflecting systems on barrier sheet, can not recover
Original state.
To solve the above problems, the present invention provide respectively a kind of MEMS reflecting systems, the preparation method of the reflecting system and
Reflecting system array including multiple reflecting systems.Wherein, MEMS reflecting systems include：
The cavity of Semiconductor substrate is formed at, the fixed electrode in the cavity and the reflection as movable electrode
Mirror；The fixed electrode is oppositely arranged with the speculum, and the speculum is supported by overarm, to enable the speculum
Enough deflection；The MEMS reflecting systems also have the barrier sheet for being used for preventing the speculum excessive deflection；Wherein, at least with institute
The surface for stating the position for the barrier sheet that speculum directly contacts is conductive material layer.
Alternatively, the overarm includes conductive material layer and dielectric layer, and the dielectric layer more leans on than the conductive material layer
The nearly speculum；The position of the barrier sheet at least directly contacted with the speculum only has conductive material layer.
Alternatively, the dielectric layer is silica, and the conductive material layer is metal level.
Alternatively, by two the first support columns support positioned at the Semiconductor substrate, centre is at the both ends of the overarm
Hanging structure；There is the second support column, second support between the strong point of the first support column support of overarm two
Post is used to support the speculum.
Alternatively, second support column is positioned at the midpoint of the strong point of the overarm two first support column support.
Alternatively, the barrier sheet is connected to the both ends of the overarm, and electrical with the speculum by the overarm
Link together.
Alternatively, the barrier sheet often held of the overarm has two and relatively described overarm is symmetrical.
Alternatively, the overarm, the fixed electrode are located at same layer with the barrier sheet.
Alternatively, the 3rd support column is additionally provided with the Semiconductor substrate, the barrier sheet is by first support column
Supported with the 3rd support column.
Alternatively, the 3rd support column is supported between first support column and the free end of the barrier sheet, institute
The surface for stating the free end of barrier sheet is conductive material layer.
Alternatively, the Semiconductor substrate has metal interconnection structure, is to separate between the barrier sheet and the overarm
Formula designs, and the barrier sheet conducts with the metal interconnection structure.
Alternatively, the barrier sheet is by setting the 3rd support column on the semiconductor substrate to support, the barrier sheet
Conducted by the 3rd support column support and the metal interconnection structure of the Semiconductor substrate.
Alternatively, the fixed electrode is arranged on the bottom of the cavity of the Semiconductor substrate.
Alternatively, the fixed electrode is two pieces, and relatively described overarm is symmetrical.
Alternatively, the material of the conductive material layer be copper, aluminium, titanium, silver, above two or various metals composition or
Polysilicon, and/or the material of the speculum is aluminium, silver, titanium or its composition.
Based on above-mentioned MEMS reflecting systems, present invention also offers a kind of MEMS including multiple MEMS reflecting systems is anti-
Penetrate systems array.
Alternatively, the multiple MEMS reflecting systems are formed on the same semiconductor substrate.
In addition, present invention also offers a kind of preparation method of MEMS reflecting systems, including：
Semiconductor substrate with target electric coupling area is provided；
The first sacrifice layer is formed over the substrate；
Etch first sacrifice layer and form multiple first windows, fill the first window formation and be electrically connected with different target
Connect the metal interconnection structure and the first support column of region conducting；
Layer of conductive material and dielectric layer are distinguished from bottom to top, and etching forms consolidating on metal interconnection structure respectively
Fixed electrode, both ends are located at the overarm on the first support column and the barrier sheet being connected with the overarm both ends respectively；
Remove dielectric layer of the barrier sheet close to free end portion；
The second sacrifice layer is formed on the metal level, dielectric layer and the first sacrifice layer；
Etch second sacrifice layer and dielectric layer and form the second window, it is described outstanding to fill the second window formation connection
Second support column of beam；
Speculum is formed on second sacrifice layer and the second support column；
Remove the first sacrifice layer and the second sacrifice layer forms MEMS reflecting systems.
Alternatively, etch first sacrifice layer and form first window, when filling the first window, also form the 3rd
When dagger, etch conductive layer and dielectric layer form barrier sheet, the barrier sheet is located on the 3rd support column.
Alternatively, the material of first sacrifice layer and the second sacrifice layer is all amorphous carbon, and minimizing technology is ashing method.
Alternatively, the dielectric layer for removing the barrier sheet close to free end portion is carved by wet method removal or photoetching, dry method
Erosion is formed.
Alternatively, the barrier sheet is removed in the dielectric layer step of free end portion：The region of removal is from the 3rd
The support column strong point is to the barrier sheet free end.
Compared with prior art, the present invention has advantages below：1）In existing reflecting system, overarm and barrier sheet are whole
Surface all covers dielectric layer, and the dielectric layer speculum and the continuous collision rift of barrier sheet, can cause in the reflecting system course of work
Dielectric layer on barrier sheet produces trapped charge（trapped charge）, the trapped charge can produce Electrostatic Absorption and show
As the Electrostatic Absorption can cause speculum absorption can not return to equilbrium position problem on barrier sheet.In view of the above-mentioned problems, this
Invention proposes at least to remove the dielectric layer on the surface at the position directly contacted with the speculum on barrier sheet so that the position
Surface is conductive material, so that when speculum contacts with barrier sheet, no trapped charge produces, thus without electrostatic attraction, keeps away
Electrostatic Absorption is between the two exempted from.
2）In alternative, overarm includes conductive material layer and dielectric layer, and dielectric layer is than conductive material layer closer to described
Speculum；The position of the barrier sheet directly contacted with the speculum only has conductive material layer.Preferably, with it is described anti-
The position for penetrating the barrier sheet that mirror directly contacts is the free end of the barrier sheet, in this way, the removal of the dielectric layer to free end,
The rigidity of free end can be caused to reduce, be advantageous to speculum bouncing back into equilbrium position.
3）In alternative, a）Barrier sheet can be connected to the one or both ends of the overarm, and being shared with the overarm should
The support column of overarm（First support column）, b）Barrier sheet can also connect with it is described overarm it is separately positioned, by single support column（The
Three support columns）Support.For a）Scheme, it is advantageous in that：Speculum is electrically identical with barrier sheet, is bounce back into beneficial to by speculum
Equilbrium position.For b）Scheme, barrier sheet can be grounded by connected metal interconnection structure, are electrical with speculum
Identical or electrically identical with fixed electrode, its selection is more, when it is grounded, can also avoid the electricity of fixed electrode, barrier sheet
Property apply deflection to speculum and impact.
4）In alternative, for 3）A in alternative）Scheme, it is connected to the stop of the overarm one or both ends
Piece can also be by extra support column（3rd support column）Support, the 3rd support column can be arranged on the free end of barrier sheet,
It can also be arranged between the free end of barrier sheet and the strong point of the first support column, for the latter, on barrier sheet is removed
During dielectric layer, it can be removed to from free end between the strong point of the 3rd support column, in this way, during speculum is shot back,
The 3rd support column strong point can be used as fulcrum, be more beneficial for speculum bouncing back into equilbrium position.
5）In alternative, the fixed electrode of formation is two, and its relatively described overarm is symmetrical, and/or mirror support
At the midpoint of overarm, above two scheme is all beneficial to the repetition reliability for speculum uniform application, enhancing reflecting system.
6）In alternative, fixed electrode, overarm and barrier sheet are formed in same technique, are formed relative to three's substep
Method, reduce processing step, improve efficiency.
Brief description of the drawings
Fig. 1 is a kind of structural representation of MEMS reflecting systems of prior art；
Fig. 2 to Fig. 9 is the structural representation of the different production phases of the MEMS reflecting systems of the embodiment of the present invention one；
Figure 10 is the structural representation of the MEMS reflecting systems of the embodiment of the present invention two；
Figure 11 is the structural representation of the MEMS reflecting systems of the embodiment of the present invention three；
Figure 12 is the structural representation of the MEMS reflecting systems of the embodiment of the present invention four.
Embodiment
As described in the background art, after existing reflecting system uses repeatedly, easily there is speculum absorption on barrier sheet
Equilbrium position problem can not be returned to.The present inventor analyze the reason for this is that：In reflecting system, overarm and barrier sheet whole surface are all
Dielectric layer is covered, the dielectric layer is in fixed electrode, speculum apply voltage course, speculum and the continuous collision rift resistance of barrier sheet
Catch upper dielectric layer produces trapped charge, and the trapped charge can produce Electrostatic Absorption phenomenon, and the Electrostatic Absorption can cause speculum
Absorption can not rebound on barrier sheet.In view of the above-mentioned problems, present invention proposition at least will be direct with the speculum on barrier sheet
The dielectric layer on the surface at the position of contact removes so that the portion faces are conductive material, and the electrostatic avoided between the two is inhaled
It is attached.
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.Because the present invention focuses on explanation principle, therefore, chart not in scale.
Embodiment one
Fig. 2 show the structural representation of the MEMS reflecting systems of the present embodiment offer.
The MEMS reflecting systems include：
It is formed at Semiconductor substrate（It is not shown）Cavity 2a, the fixed electrode 26 in the cavity 2a；
Overarm 25 in the cavity 2a, the both ends of the overarm 25 have the strong point 25a, the strong point 25a
Supported by two the first support columns 24 positioned at the Semiconductor substrate；
The second support column 29 between two strong point 25a of the overarm, work is supported by second support column 29
For the speculum 30 of movable electrode, the speculum 30, the second support column 29, the overarm 25 and the electricity of first support column 24
Connection；
Wherein, the both ends of the overarm 25 also have the barrier sheet 27 for being used for preventing the excessive deflection of speculum 30, institute
Stating barrier sheet 27 has the fixing end being connected with overarm 25 and the free end 27a away from the fixing end, and the overarm 25 includes phase
To the conductive material layer 251 close to the Semiconductor substrate 20 and the dielectric layer 252 for being relatively distant from the Semiconductor substrate 20, institute
State barrier sheet 27 only has conductive material layer 251 at least adjacent to free end 27a part.
In the present embodiment, the free end 27a of barrier sheet 27 is the position that speculum 30 directly contacts with barrier sheet 27.
The course of work of above-mentioned reflecting system is：Apply electrical phase between any one fixed electrode 26 and speculum 30
Counter voltage, speculum 30 are attracted by fixed electrode 26, drive overarm 25 to reverse and deflect, due to the presence of barrier sheet 27,
The speculum 30 will not excessive deflection and collided with fixed electrode 26；The torsional return of dead electricity back mirror 30 in overarm 25
Equilbrium position is returned under effect.
In the above-mentioned course of work, because the free end 27a of barrier sheet 27 only has conductive material layer 251, without dielectric
Layer 252, thus, even if after barrier sheet 27 and the multiple impacts of speculum 30, the free end 27a of barrier sheet 27 will not also store electrostatic
Lotus and cause speculum 30 to adsorb thereon, on the contrary, the conductive material layer 251 of the barrier sheet 27 is electrically interconnected with speculum 30, because
And both are electrically identical, speculum 30 and barrier sheet 27 are mutually exclusive so as to being rebounded equilbrium position beneficial to speculum 30.Need
It is bright, during being applied in voltage in speculum 30 and deflecting, barrier sheet 27 due to speculum 30 be electrical connected because
And can be electrically identical, so deflection that in theory can be to speculum 30 produces part inhibition, but due to the inhibition
Much smaller than suction-operated of the fixed electrode 26 to speculum 30, thus its can't finally influence the deflection angle of speculum 30 and
Holding of the speculum 30 on the deflection angle.
As seen from Figure 2, the fixed electrode 26 of the reflecting system of the present embodiment is two pieces, and relatively described 25 pairs of overarm
Claim.The course of work is accordingly：Apply electrical opposite voltage, speculum 30 between the fixed electrode 26 and speculum 30 on the left side
Attracted by the fixed electrode 26 on the left side, drive overarm 25 to reverse and deflection counterclockwise occurs, because the barrier sheet 27 on the left side is deposited
, the speculum 30 will not excessive deflection and collided with the fixed electrode 26 on the left side；Torsion of the dead electricity back mirror 30 in overarm 25
Turn to return to equilbrium position under the effect torsion clockwise of restoring force；Apply between fixed electrode 26 and speculum 30 on the right
Electrical opposite voltage, speculum 30 are attracted by the fixed electrode 26 on the right, drive overarm 25 to reverse and deflection clockwise occurs, by
In the presence of the barrier sheet 27 on the right, the speculum 30 will not excessive deflection and collided with the fixed electrode 26 on the right；After dead electricity
Speculum 30 returns to equilbrium position in the case where the effect of the torsional return of overarm 25 is reversed counterclockwise.The stop on the above-mentioned left side
Piece 27 and the barrier sheet 27 on the right can be that two barrier sheets 27 can phase from two barrier sheets 27 of 25 one end of overarm extension
To the overarm 25 symmetrically or non-symmetrically, in other embodiments, the barrier sheet 27 on the left side can be point with the barrier sheet 27 on the right
Not from overarm 25 both ends extension two barrier sheets 27, in other words, the barrier sheet 27 of one end one, two barrier sheets 27 it is specific
Structure relatively described can hang oneself from a beam 25 symmetrically or non-symmetrically.It is understood that often end has two relatively described 25 pairs of overarms
Claim or asymmetric barrier sheet 27 can also realize the purpose of the present invention.
In the present embodiment, the second support column 29 is positioned at 25 liang of strong point 25a midpoints of the overarm, so beneficial to uniform support
Speculum 30, and be easy to make, in other embodiments, it can also be disposed at according to the shape of speculum 30 in overarm 25
Respective point, in favor of to the uniform support of speculum 30.
It is understood that in the present embodiment, the free end 27a of barrier sheet 27 directly connects for speculum 30 with barrier sheet 27
Tactile position, in other embodiments, such as due to the change of barrier sheet 27 position, shape, and the shape of speculum 30 and its
By the change of supporting point position so that the position that speculum 30 contacts at first when deflecting changes, if being no longer the free end
27a is accordingly, exposed by the conductive material layer 251 of the contact site, you can to realize the object of the invention.
In other embodiments, overarm 25 is not limited to only including conductive material layer 251 and dielectric layer 252 with barrier sheet 27,
Other layers can be arranged as required to.In addition, conductive material layer 251 therein is also not necessarily limited to as metal level, or other
Conductive material layer, for example, heavily doped polysilicon etc..
Fig. 3 to Fig. 9 show schematic diagram of the MEMS reflecting systems in the different production phases, below in conjunction with Fig. 2 to Fig. 9 institutes
Show, the preparation method that MEMS reflecting systems are discussed in detail.
Perform step S1：Semiconductor substrate with target electric coupling area is provided.
Top view as shown in Figure 3, formed with multiple target electric coupling areas 21, target electricity in the Semiconductor substrate 20
Join domain is, for example, the pattern or conductive plunger of metal interconnection structure.In addition, in the plurality of target electric coupling area 21, one
Divide and be electrically interconnected, another part is electrically interconnected.Such as along shown in the sectional view Fig. 4 in the A-A faces in Fig. 3, a target electrically connects area
Domain 21 is used to be electrically interconnected with fixed electrode, and another is used to be electrically interconnected with the speculum as movable electrode.
Perform step S2：The first sacrifice layer is formed over the substrate, is etched first sacrifice layer and is formed multiple first
Window, fill the first window and form the metal interconnection structure and the first support column turned on different target electric coupling area.
As shown in figure 5, the material of the first sacrifice layer 22 can be the material being easily removed, it is amorphous in the present embodiment
Carbon, the technique of window being formed in amorphous carbon with reference to existing process, window therein can be through hole or groove, if for example,
Target electric coupling area in Semiconductor substrate 20 is the pattern of metal interconnection structure, and the metal of the corresponding electrode that is connected interconnects
Structure 23 is conductive plunger therein, and the window that this step is formed is through hole；If the target electrical connection area in Semiconductor substrate 20
Domain is the conductive plunger of metal interconnection structure, and the metal interconnection structure 23 of the corresponding electrode that is connected is pattern therein, this step
Suddenly the window formed is groove.The shape of first support column 24 can be conductive plunger, or the figure of metal interconnection structure
Case.
Perform step S3：Deposited metal and dielectric layer are distinguished from bottom to top, and etching is formed respectively mutually to be linked positioned at metal
Fixed electrode, both ends on structure are located at the overarm on the first support column and the barrier sheet fixed with the overarm both ends respectively, go
Except the barrier sheet is close to the dielectric layer of free end portion.
As shown in fig. 6, the both ends 25a of overarm 25 is respectively fallen on the first support column 24, fixed electrode 26 falls in step S2
The metal interconnection structure of middle formation（Conductive plunger or pattern）On.Except above-mentioned overarm 25, fixed electrode 26, this step is also formed
Barrier sheet 27 positioned at 25 both ends of overarm, the barrier sheet 27 are this two from two barrier sheets 27 of 25 one end of overarm extension
Barrier sheet 27 relatively described can hang oneself from a beam 25 symmetrically or non-symmetrically.In other embodiments, barrier sheet 27 can be respectively from overarm
Two barrier sheets 27 of 25 both ends extension, in other words, the barrier sheet 27 of one end one, the concrete structures of two barrier sheets 27 can be with
Relatively described overarm 25 is symmetrically or non-symmetrically.As can be seen that the fixed electrode 26 that this step is formed is located at same height with overarm 25
Degree.In other embodiments, the fixed electrode 26 can also be located in the Semiconductor substrate 20 that step S1 is provided.
In addition, with reference to the sectional view along the B-B straight lines in Fig. 6（Upper left corner barrier sheet 27 turns clockwise α angles to barrier sheet
27 is 25 coplanar with overarm, and the barrier sheet β angles that turn clockwise in the lower right corner are 25 coplanar with hanging oneself from a beam to barrier sheet 27）Shown in Fig. 7, the overarm
25 and barrier sheet 27 include two layers：It is relatively distant from the dielectric layer 252 of Semiconductor substrate 20 and relatively close Semiconductor substrate 20
Conductive material layer 251.In the free end 27a of barrier sheet 27（Remote end fixed with overarm 25）Only there is conductive material layer
251, the minimizing technology of dielectric layer 252 thereon can be that wet method removes, and photoetching, dry method can also be used to remove.For fixation
Dielectric layer 252 on electrode 26, can retain, and can also remove.
In this step, the material of dielectric layer 252 can select existing dielectric material, for example, silica, conductive material
The material of layer 251 can be metal, such as copper, aluminium, titanium, silver or its composition, or other conductive materials, such as polycrystalline
Silicon etc..
Perform step S4：Form the second sacrifice layer on the metal level, dielectric layer and the first sacrifice layer, etching described the
Two sacrifice layers and dielectric layer form the second window, fill second window and form the second support column for connecting the overarm.
As shown in figure 8, the second sacrifice layer 28 formed shown in Fig. 7 on architecture basics material preferably with the first sacrifice layer
22 materials are identical, to be removed in same technique.In the present embodiment, the material of second sacrifice layer 28 is also amorphous carbon.
The shape of second support column 29 can be with identical with the shape of the first support column 24, can also be different, preferably falls in overarm 25
Point.
Perform step S5：Speculum is formed on second sacrifice layer and the second support column.
As shown in figure 9, the material for the speculum 30 that this step is formed can be aluminium, silver, titanium or its composition.
Perform step S6：Remove the first sacrifice layer and the second sacrifice layer forms MEMS reflecting systems.
This step completes the release of MEMS reflecting systems.The material of first sacrifice layer 22 and the second sacrifice layer 28 is without fixed
During shape carbon, minimizing technology is ashing method, after ashing, forms the cavity 2a positioned at Semiconductor substrate 20.
So far, the making of MEMS reflecting systems is completed, each step makes the part of multiple above-mentioned MEMS reflecting systems,
Complete the making of MEMS reflecting system arrays, it is preferable that the plurality of MEMS reflecting systems are formed in a block semiconductor substrate
On.
Embodiment two
MEMS reflecting systems that the present embodiment provides, the preparation method of the reflecting system and including the anti-of multiple reflecting systems
It is substantially identical with embodiment one to penetrate systems array.Difference is：In step S2, the first sacrifice layer 22 of etching forms first window,
When filling the first window, the 3rd support column 31 is also formed（Shown in reference picture 10）, etch conductive layer 251 and dielectric layer
During 252 formation barrier sheet 27, the barrier sheet 27 is located on the 3rd support column 31.In other words, as shown in Figure 10, barrier sheet
27 are not only supported by the first support column 24, are also supported by the 3rd support column 31.3rd support column 31 can be electrically connected with target
Region 21 is connect to turn on, and the pattern of the conducting or conductive plunger and the target electric coupling area 21 of first support column 24 conducting
Electrical connection.
Preferably, in step S3, the barrier sheet 27 is removed in the step of dielectric layer 252 of free end 27a parts：Go
The region removed is from the strong point of the 3rd support column 31 to the free end 27a of barrier sheet 27.In other words, the barrier sheet 27 includes the
The strong point of three support column 31 to free end 27a Part I and the strong point of the 3rd support column 31 to hang oneself from a beam 25 fixing ends second
Part, the Part I only have conductive material layer 251, and the Part II includes the relatively close Semiconductor substrate 20
Conductive material layer 251 and be relatively distant from the dielectric layer 252 of the Semiconductor substrate 20.In this way, returned in barrier sheet 27 flat
In the state procedure that weighs, due to relatively thin, rigidity reduces the barrier sheet 27, deformability increase, and the 3rd in rebound process
The strong point of dagger 31 is as new fulcrum, in this way, being advantageous to rebounding for the barrier sheet 27.
Embodiment three
MEMS reflecting systems that the present embodiment provides, the preparation method of the reflecting system and including the anti-of multiple reflecting systems
It is substantially identical with embodiment one, two to penetrate systems array.Difference is：As shown in figure 11, in reflecting system, fixed electrode 26 is one
Individual, the corresponding course of work is：Apply electrical opposite voltage between fixed electrode 26 and speculum 30, speculum 30 is by solid
Fixed electrode 26 attracts, and drives overarm 25 to reverse clockwise and deflects, due to the presence of barrier sheet 27, the speculum 30 will not mistake
Degree is deflected and collided with fixed electrode 26；Dead electricity back mirror 30 reverses counterclockwise in the presence of the torsional return of overarm 25
Return to equilbrium position；Apply electrically identical voltage between fixed electrode 26 and speculum 30, speculum 30 is by fixed electricity
Pole 26 is repelled, and is driven overarm 25 to reverse counterclockwise and is deflected, due to the presence of barrier sheet 27, the speculum 30 will not be excessively inclined
Then collided with fixed electrode 26；The twist recovery clockwise in the presence of the torsional return of overarm 25 of dead electricity back mirror 30
To equilbrium position.
It is similar with embodiment one, can be to extend two barrier sheets 27 from 25 one end of overarm, two barrier sheets 27 can be with
It is relatively described to hang oneself from a beam 25 symmetrically or non-symmetrically, or respectively from two barrier sheets 27 of 25 both ends of overarm extension, in other words, one end one
Individual barrier sheet 27, the concrete structure of two barrier sheets 27 relatively described can hang oneself from a beam 25 symmetrically or non-symmetrically.
Example IV
Different from embodiment above, barrier sheet 27 ' is no longer integrally formed with overarm 25 in the present embodiment, between the two
Employ separation design.Specifically, as shown in figure 12, the MEMS reflecting systems, including fixed electrode 26 is with being used as movable electricity
The speculum 30 of pole；The fixed electrode 26 is oppositely arranged with the speculum 30, and the speculum 30 is supported by overarm 25,
To enable the speculum 30 after voltage is applied in deflect.The MEMS reflecting systems also have barrier sheet 27 ', described
Barrier sheet 27 ' is positioned at first（It is relatively fixed for electrode 26）The position contacted with speculum 30, to prevent the mistake of speculum 30
Degree deflection and contacted with fixed electrode 26, in deflection, the barrier sheet 27 ' directly contacts with the speculum 30
The surface at position is conductive material, such as metal（Include metallic compound with good conductivity or metal composites）.This implementation
In example, the position directly contacted with the speculum 30 of the barrier sheet 27 ' is the free end 27a of the barrier sheet 27 '.Due to
The position that barrier sheet 27 ' and speculum 30 collide is conductive material, thus, even if with after the multiple impacts of speculum 30, barrier sheet
27 ' colliding part will not also accumulate electrostatic charge and cause speculum 30 to adsorb thereon.
In the present embodiment, barrier sheet 27 ' is by setting the 3rd support column 31 on a semiconductor substrate to support, it is preferable that should
The position that the strong point of 3rd support column 31 does not contact directly on the barrier sheet 27 ' with the speculum 30, i.e. free end
27a。
As a kind of preferably embodiment, the barrier sheet 27 ' can be connected into a circuit, such as earthed circuit, to enter one
Step accelerates the export of collisional charge.More preferably mode is the external power supply of barrier sheet 27 ', for example is provided for speculum 30
The power supply of voltage；When deflection is completed and needs the reset of speculum 30, the power supply applies and the voltage of the same type of speculum 30 is given
Barrier sheet 27 '.In other embodiments, the polarity of the external power supply can also be identical with the polarity of fixed electrode 26.
For convenience of making, the overarm 25, fixed electrode 26 can be located at same layer with the barrier sheet 27 ', so pass through
Same metal deposit, etch step, you can realize the making of multiple parts, be advantageous to cost-effective, shortening Production Time.
Certain part or a certain position of part that non-emphasis refers in example IV, it can use identical with preceding embodiment
Or similar structure, do not describe one by one here.
In the present invention, each embodiment uses laddering literary style, emphasis description and the difference of previous embodiment, each to implement
The same section of identical structure and preparation method with reference to the foregoing embodiments in example.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting the present invention, any this area
Technical staff without departing from the spirit and scope of the present invention, may be by the methods and technical content of the disclosure above to this hair
Bright technical scheme makes possible variation and modification, therefore, every content without departing from technical solution of the present invention, according to the present invention
Any simple modifications, equivalents, and modifications made to above example of technical spirit, belong to technical solution of the present invention
Protection domain.
Claims (14)
1. a kind of MEMS reflecting systems, including：Be formed at the cavity of Semiconductor substrate, the fixed electrode in the cavity with
Speculum as movable electrode；The fixed electrode is oppositely arranged with the speculum, and the speculum is supported by overarm,
To enable the speculum to deflect；The MEMS reflecting systems also have the resistance for being used for preventing the speculum excessive deflection
Catch；Characterized in that, the position of the barrier sheet at least directly contacted with the speculum is hanging；
By two the first support columns support positioned at the Semiconductor substrate, centre is hanging structure at the both ends of the overarm；Institute
Stating between the strong point of two first support columns supports of overarm has the second support column, and second support column is for supporting
The speculum；
The barrier sheet is connected to the both ends of the overarm, and is electrically connected by the overarm with the speculum；
The 3rd support column is additionally provided with the Semiconductor substrate, the barrier sheet is by the first support column and the 3rd support column
Support；
3rd support column is supported between first support column and the free end of the barrier sheet, the barrier sheet from
It is conductive material layer by the surface held.
2. MEMS reflecting systems according to claim 1, it is characterised in that the overarm includes conductive material layer and dielectric
Layer, the dielectric layer is than the conductive material layer closer to the speculum；Described at least directly being contacted with the speculum
The position of barrier sheet only has conductive material layer.
3. MEMS reflecting systems according to claim 2, it is characterised in that the dielectric layer is silica, the conduction
Material layer is metal level.
4. MEMS reflecting systems according to claim 1, it is characterised in that second support column is located at the overarm
The midpoint of the strong point of the two first support column supports.
5. MEMS reflecting systems according to claim 1, it is characterised in that the barrier sheet often held of the overarm has two
Individual and relatively described overarm is symmetrical.
6. MEMS reflecting systems according to claim 1, it is characterised in that it is described overarm, the fixed electrode with it is described
Barrier sheet is located at same layer.
7. the MEMS reflecting systems according to claim 1 or 4, it is characterised in that the Semiconductor substrate has metal mutual
Link structure, be separation design, the barrier sheet and the metal interconnection structure conductance between the barrier sheet and the overarm
It is logical.
8. MEMS reflecting systems according to claim 1, it is characterised in that the fixed electrode is two pieces, relatively described
Overarm is symmetrical.
A kind of 9. MEMS reflecting systems of the MEMS reflecting systems including described in any one in multiple the claims 1 to 8
Array.
10. MEMS reflecting systems array according to claim 9, it is characterised in that the multiple MEMS reflecting systems shape
Into on the same semiconductor substrate.
A kind of 11. preparation method of MEMS reflecting systems, it is characterised in that including：
Semiconductor substrate with target electric coupling area is provided；
The first sacrifice layer is formed over the substrate；
Etch first sacrifice layer and form multiple first windows, fill the first window formation and electrically connect area with different target
The metal interconnection structure and the first support column of domain conducting；
Layer of conductive material and dielectric layer, the fixed electricity that etching is formed on metal interconnection structure respectively are distinguished from bottom to top
Pole, both ends are located at the overarm on the first support column and the barrier sheet being connected with the overarm both ends respectively；
Remove dielectric layer of the barrier sheet close to free end portion；
The second sacrifice layer is formed on the metal level, dielectric layer and the first sacrifice layer；
Etch second sacrifice layer and dielectric layer and form the second window, fill second window and form the connection overarm
Second support column；
Speculum is formed on second sacrifice layer and the second support column；
Remove the first sacrifice layer and the second sacrifice layer forms MEMS reflecting systems；
The barrier sheet is connected to the both ends of the overarm, and is electrically connected by the overarm with the speculum；
When filling the first window, the 3rd support column is also formed, when etch conductive layer and dielectric layer form barrier sheet, institute
State barrier sheet to be located on the 3rd support column, the barrier sheet is supported by first support column and the 3rd support column；
3rd support column is supported between first support column and the free end of the barrier sheet, the barrier sheet from
It is conductive material layer by the surface held.
12. preparation method according to claim 11, it is characterised in that the material of first sacrifice layer and the second sacrifice layer
Matter is all amorphous carbon, and minimizing technology is ashing method.
13. preparation method according to claim 11, it is characterised in that remove the barrier sheet close to free end portion
Dielectric layer is removed by wet method or photoetching, dry etching are formed.
14. preparation method according to claim 11, it is characterised in that remove the barrier sheet close to free end portion
In dielectric layer step：The region of removal is from the 3rd support column strong point to the barrier sheet free end.
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