CN103926689A - MEMS reflection system array, MEMS reflection system, and manufacturing method of the MEMS reflection system - Google Patents
MEMS reflection system array, MEMS reflection system, and manufacturing method of the MEMS reflection system Download PDFInfo
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- CN103926689A CN103926689A CN201310009779.9A CN201310009779A CN103926689A CN 103926689 A CN103926689 A CN 103926689A CN 201310009779 A CN201310009779 A CN 201310009779A CN 103926689 A CN103926689 A CN 103926689A
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Abstract
The invention provides an MEMS reflection system, a manufacturing method of the reflection system, and a reflection system array comprising multiple reflection systems. After frequent use of a conventional reflection system, since the whole surfaces of an over beam and a block sheet are covered by dielectric layers, during the voltage application work process of a fixation electrode and a reflector, since the reflector and the block sheet continuously bump into each other, trap charge is generated at the dielectric layer portion disposed on the block sheet, the trap charge generates a static electro adsorption phenomenon, and consequently, the reflector is absorbed to the block sheet and cannot rebound. In order to avoid such problems, the invention, the dielectric layer on the surface of a portion, which is directly contacted with the reflector, on the block sheet is at least removed, and the surface of the portion is made of a conductive material, so that the electro adsorption between the two is avoided.
Description
Technical field
The invention belongs to field of semiconductor manufacture, particularly relate to MEMS reflecting system array, MEMS reflecting system and preparation method thereof.
Background technology
Since later 1980s, along with the development of MEMS (micro electro mechanical system) (Micro-Electro-Mechanical-System, MEMS) technology, some semiconductor devices have been realized microminaturization.Such as the digital micro display chip (Digital Mico Display, DMD) for projector, Helmet Mounted Display (Head Mounted Display) etc., it can shorten the distance between chip and camera lens, is extensively studied at present.
The MEMS reflecting system that Figure 1 shows that existing digital micro display chip, it comprises cavity 1a, is formed on bottom electrode 11 in cavity 1a, unsettled crossbeam 12 and is supported on the catoptron 13 on crossbeam 12.Its course of work is: between a bottom electrode 11 in office and catoptron 13, apply electrical opposite voltage, catoptron 13 is subject to bottom electrode 11 and attracts, drive crossbeam 12 to reverse and realize self deflection, after dead electricity, under the effect of the twisting resistance of crossbeam 12, returning to equilibrium position.
In said process, catoptron 13 likely excessive deflection causes encountering bottom electrode 11 and causes short circuit, for addressing the above problem, has and proposes to arrange in the termination of crossbeam 12 barrier sheet (Fig. 1 is not shown).
This crossbeam 12 is generally layer of metal, and it has certain elasticity, but this metal level is too easily out of shape, and for strengthening its rigidity (stiffness), one dielectric layer is generally set thereon.Above-mentioned reflecting system is in manufacturing process, and barrier sheet and crossbeam 12 generally form in same technique, thereby also have dielectric layer on the metal level of barrier sheet.
Yet above-mentioned MEMS reflecting system, after repeatedly using, there will be catoptron to be adsorbed on the phenomenon on barrier sheet, cannot return to equilibrium position.
For the problems referred to above, the present invention proposes a kind of new MEMS reflecting system array, MEMS reflecting system and preparation method thereof and solves.
Summary of the invention
The technical problem to be solved in the present invention is that the catoptron of MEMS reflecting system is easily adsorbed on barrier sheet, cannot restore to the original state.
For addressing the above problem, the present invention provides respectively the method for making of a kind of MEMS reflecting system, this reflecting system and comprises the reflecting system array of a plurality of reflecting systems.Wherein, MEMS reflecting system comprises:
Be formed at the cavity of Semiconductor substrate, the fixed electorde that is positioned at described cavity and catoptron as movable electrode; Described fixed electorde and described catoptron are oppositely arranged, and described catoptron is by the support of hanging oneself from a beam, so that described catoptron can deflection; Described MEMS reflecting system also has for preventing the barrier sheet of described catoptron excessive deflection; The surface at the position of the described barrier sheet wherein, at least directly contacting with described catoptron is conductive material layer.
Alternatively, described overarm comprises conductive material layer and dielectric layer, and described dielectric layer is than the more close described catoptron of described conductive material layer; The position of the described barrier sheet at least directly contacting with described catoptron only has conductive material layer.
Alternatively, described dielectric layer is monox, and described conductive material layer is metal level.
Alternatively, the two ends of described overarm are supported by two the first support columns that are positioned at described Semiconductor substrate, and centre is hanging structure; Between the strong point that described in described overarm two, the first support column supports, have the second support column, described the second support column is used for supporting described catoptron.
Alternatively, described the second support column is positioned at the mid point of the strong point that the first support column supports described in described overarm two.
Alternatively, described barrier sheet is connected to the two ends of described overarm, and is electrically connected by described overarm and described catoptron.
Alternatively, the barrier sheet of every end of described overarm has two and relatively described overarm symmetry.
Alternatively, described overarm, described fixed electorde and described barrier sheet are positioned at same layer.
Alternatively, be also provided with the 3rd support column in described Semiconductor substrate, described barrier sheet is supported by described the first support column and described the 3rd support column.
Alternatively, described the 3rd support column is supported between described the first support column and the free end of described barrier sheet, and the free-ended surface of described barrier sheet is conductive material layer.
Alternatively, described Semiconductor substrate has metal interconnect structure, between described barrier sheet and described overarm, is separation design, and described barrier sheet and described metal interconnect structure conduct.
Alternatively, described barrier sheet is supported by the 3rd support column being arranged in described Semiconductor substrate, and described barrier sheet is supported with the metal interconnect structure of described Semiconductor substrate and conducted by described the 3rd support column.
Alternatively, described fixed electorde is arranged on the bottom of the cavity of described Semiconductor substrate.
Alternatively, described fixed electorde is two, and relatively described overarm is symmetrical.
Alternatively, the material of described conductive material layer is composition or the polysilicon of copper, aluminium, titanium, silver, above-mentioned two or more metals, and/or the material of described catoptron is aluminium, silver, titanium or its composition.
MEMS reflecting system based on above-mentioned, the present invention also provides a kind of MEMS reflecting system array that comprises a plurality of MEMS reflecting systems.
Alternatively, described a plurality of MEMS reflecting system is formed in same semi-conductive substrate.
In addition, the present invention also provides a kind of method for making of MEMS reflecting system, comprising:
Provide and there is the Semiconductor substrate that target is electrically connected to region;
On described substrate, form the first sacrifice layer;
Described in etching, the first sacrifice layer forms a plurality of first windows, fills described first window and forms metal interconnect structure and the first support column that is electrically connected to region conducting with different target;
Distinguish layer of conductive material and dielectric layer from bottom to top, etching forms respectively the barrier sheet that the fixed electorde, the two ends that are positioned on metal interconnect structure lay respectively at the overarm on the first support column and are connected with described overarm two ends;
Remove described barrier sheet near the dielectric layer of free end portion;
On described metal level, dielectric layer and the first sacrifice layer, form the second sacrifice layer;
Described in etching, the second sacrifice layer and dielectric layer form Second Window, fill described Second Window and form the second support column that connects described overarm;
On described the second sacrifice layer and the second support column, form catoptron;
Remove the first sacrifice layer and the second sacrifice layer and form MEMS reflecting system.
Alternatively, the first sacrifice layer forms first window described in etching, while filling described first window, also forms the 3rd support column, and when etching conductive material layer and dielectric layer form barrier sheet, described barrier sheet is positioned on described the 3rd support column.
Alternatively, the material of described the first sacrifice layer and the second sacrifice layer is all agraphitic carbon, and removal method is ashing method.
Alternatively, remove that described barrier sheet is removed by wet method near the dielectric layer of free end portion or photoetching, dry etching form.
Alternatively, remove in the dielectric layer step of described barrier sheet near free end portion: the region of removal is to described barrier sheet free end from the 3rd support column strong point.
Compared with prior art, the present invention has the following advantages: 1) in existing reflecting system, overarm and the whole surface of barrier sheet all cover dielectric layer, this dielectric layer is in the reflecting system course of work, after catoptron and barrier sheet constantly collide, the dielectric layer that can cause being positioned on barrier sheet produces trapped charge (trapped charge), and this trapped charge can produce Electrostatic Absorption phenomenon, and this Electrostatic Absorption can cause catoptron to be adsorbed on barrier sheet cannot return to equilibrium position problem.For the problems referred to above, the present invention proposes the surperficial dielectric layer at the position that directly contacts with described catoptron to major general's barrier sheet and removes, making this surface, position is conductive material, thereby when catoptron is contacted with barrier sheet, without trapped charge, produce, thereby without electrostatic attraction, avoided Electrostatic Absorption between the two.
2) in possibility, overarm comprises conductive material layer and dielectric layer, and dielectric layer is than the more close described catoptron of conductive material layer; The position of the described barrier sheet directly contacting with described catoptron only has conductive material layer.Preferably, the free end that the position of the described barrier sheet directly contacting with described catoptron is this barrier sheet, so, the removal to free-ended dielectric layer, can be so that free-ended stiffness degradation be conducive to catoptron to bounce back into equilibrium position.
3) in possibility, a) barrier sheet can be connected to the one or both ends of described overarm, share the support column (the first support column) of this overarm with described overarm, b) barrier sheet also can be even and the separated setting of described overarm, by independent support column (the 3rd support column), supported.For a) scheme, its benefit is: catoptron is electrically identical with barrier sheet, is beneficial to catoptron is bounce back into equilibrium position.For b) scheme, barrier sheet can be grounded by connected metal interconnect structure, electrically identical or electrically identical with fixed electorde with catoptron, its selection is more, when its ground connection, can also avoid electrically applying of fixed electorde, barrier sheet to impact the deflection of catoptron.
4) in possibility, for 3) a) scheme in possibility, the barrier sheet that is connected to described overarm one or both ends also can be supported by extra support column (the 3rd support column), the 3rd support column can be arranged on the free end of barrier sheet, also can be arranged between the free end of barrier sheet and the strong point of the first support column, for the latter, during dielectric layer on removing barrier sheet, can be removed between the strong point of the 3rd support column from free end, so, catoptron by the process of rebounding in, the 3rd support column strong point can be used as fulcrum, more be conducive to catoptron to bounce back into equilibrium position.
5) in possibility, the fixed electorde of formation is two, and its relatively described overarm is symmetrical, and/or catoptron is supported on the mid point of overarm, and above-mentioned two schemes is all beneficial to the balanced application of force of catoptron, has strengthened the repetition reliability of reflecting system.
6) in possibility, fixed electorde, overarm and barrier sheet form in same technique, and the method forming step by step with respect to three, has reduced processing step, has improved efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of MEMS reflecting system of prior art;
Fig. 2 to Fig. 9 is the structural representation of different production phases of the MEMS reflecting system of the embodiment of the present invention one;
Figure 10 is the structural representation of the MEMS reflecting system of the embodiment of the present invention two;
Figure 11 is the structural representation of the MEMS reflecting system of the embodiment of the present invention three;
Figure 12 is the structural representation of the MEMS reflecting system of the embodiment of the present invention four.
Embodiment
As described in the background art, after existing reflecting system is used repeatedly, be prone to catoptron and be adsorbed on barrier sheet and cannot return to equilibrium position problem.The inventor analyze its former because: in reflecting system, overarm and the whole surface of barrier sheet all cover dielectric layer, this dielectric layer applies in voltage course at fixed electorde, catoptron, catoptron and the barrier sheet constantly rear barrier sheet upper dielectric layer of collision produce trapped charge, this trapped charge can produce Electrostatic Absorption phenomenon, and this Electrostatic Absorption can cause catoptron to be adsorbed on barrier sheet cannot rebounding.For the problems referred to above, the present invention proposes the surperficial dielectric layer at the position that directly contacts with described catoptron to major general's barrier sheet and removes, and making this surface, position is conductive material, has avoided Electrostatic Absorption between the two.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Because the present invention focuses on interpretation principle, therefore, drawing not in scale.
Embodiment mono-
Figure 2 shows that the structural representation of the MEMS reflecting system that the present embodiment provides.
This MEMS reflecting system comprises:
Be formed at the cavity 2a of Semiconductor substrate (not shown), be positioned at the fixed electorde 26 of described cavity 2a;
Be positioned at the overarm 25 of described cavity 2a, the two ends of described overarm 25 have strong point 25a, and described strong point 25a is supported by two the first support columns 24 that are positioned at described Semiconductor substrate;
The second support column 29 between described overarm two strong point 25a, described the second support column 29 upper supports have the catoptron 30 as movable electrode, and described catoptron 30, the second support column 29, described overarm 25 and described the first support column 24 are electrically connected to;
Wherein, the two ends of described overarm 25 also have for preventing the barrier sheet 27 of described catoptron 30 excessive deflection, described barrier sheet 27 has with overarm 25 stiff ends that are connected and away from the free end 27a of this stiff end, described overarm 25 comprises the conductive material layer 251 and the relative dielectric layer 252 away from described Semiconductor substrate 20 of relatively close described Semiconductor substrate 20, and described barrier sheet 27 at least only has conductive material layer 251 near the part of free end 27a.
In the present embodiment, the free end 27a of barrier sheet 27 is the position that catoptron 30 directly contacts with barrier sheet 27.
The course of work of above-mentioned reflecting system is: between any one fixed electorde 26 and catoptron 30, apply electrical opposite voltage, catoptron 30 is subject to fixed electorde 26 and attracts, driving overarm 25 to reverse deflects, due to the existence of barrier sheet 27, this catoptron 30 can excessive deflection and with fixed electorde 26 collisions; Dead electricity back mirror 30 returns to equilibrium position under the effect of the twist recovery power of overarm 25.
In the above-mentioned course of work, because the free end 27a of barrier sheet 27 only has conductive material layer 251, do not there is dielectric layer 252, thereby even after barrier sheet 27 and catoptron 30 multiple impacts, the free end 27a of barrier sheet 27 also can not store static charge and cause catoptron 30 to adsorb on it, on the contrary, the conductive material layer 251 of this barrier sheet 27 and catoptron 30 electrical interconnections, thereby both are electrically identical, thus catoptron 30 and barrier sheet 27 mutually repel and are beneficial to catoptron 30 equilibrium position of rebounding.It should be noted that, at catoptron 30, be applied in voltage and deflect in process, barrier sheet 27 is owing to being electrical connected with catoptron 30 thereby can be electrically identical, so deflection generating portion inhibition that in theory can be to catoptron 30, but due to the suction-operated of this inhibition much smaller than 26 pairs of catoptrons 30 of fixed electorde, thereby it finally can't affect deflection angle and the maintenance of catoptron 30 on this deflection angle of catoptron 30.
As seen from Figure 2, the fixed electorde 26 of the reflecting system of the present embodiment is two, and relatively described overarm 25 symmetries.The corresponding course of work is: between the fixed electorde 26 of on the left side and catoptron 30, apply electrical opposite voltage, the fixed electorde 26 that catoptron 30 is subject to the left side attracts, drive overarm 25 to reverse counterclockwise deflection occurs, due to the existence of the barrier sheet 27 on the left side, this catoptron 30 can excessive deflection and with fixed electorde 26 collisions on the left side; Dead electricity back mirror 30 returns to equilibrium position under the effect of the twist recovery power of overarm 25 is reversed clockwise; Between fixed electorde 26 on the right and catoptron 30, apply electrical opposite voltage, the fixed electorde 26 that catoptron 30 is subject to the right attracts, drive overarm 25 to reverse clockwise deflection occurs, due to the existence of the barrier sheet 27 on the right, this catoptron 30 can excessive deflection and with fixed electorde 26 collisions on the right; Dead electricity back mirror 30 returns to equilibrium position under the effect of the twist recovery power of overarm 25 is reversed counterclockwise.The barrier sheet 27 on the above-mentioned left side can be two barrier sheets 27 that extend from 25 one end of hanging oneself from a beam with the barrier sheet 27 on the right, these two barrier sheets 27 can be relatively described overarm 25 symmetrical or asymmetric, in other embodiment, the barrier sheet 27 on the left side can be two barrier sheets 27 that extend from 25 two ends of hanging oneself from a beam respectively with the barrier sheet 27 on the right, in other words, one of one end barrier sheet 27, the concrete structure of these two barrier sheets 27 can relatively described overarm 25 symmetries or asymmetric.Be understandable that, every end has two relatively described overarm 25 symmetries or asymmetric barrier sheet 27 also can be realized object of the present invention.
In the present embodiment, the second support column 29 is positioned at 25 liang of strong point 25a mid points of described overarm, so be beneficial to balanced supporting reflex mirror 30, and be easy to make, in other embodiment, also can be arranged on the respective point in overarm 25 according to the shape of catoptron 30, be beneficial to support this catoptron 30 is balanced.
Be understandable that, in the present embodiment, the free end 27a of barrier sheet 27 is the position that catoptron 30 directly contacts with barrier sheet 27, in other embodiment, such as the variation due to barrier sheet 27 positions, shape, and the variation of the shape of catoptron 30 and supported some position thereof, while making catoptron 30 deflection, the position of contact changes with it at first, if be no longer this free end 27a, accordingly, the conductive material layer of this contact site 251 is exposed, can realize the object of the invention.
In other embodiment, overarm 25 is not limited to only include conductive material layer 251 and dielectric layer 252 with barrier sheet 27, and other layer also can be set as required.In addition, conductive material layer 251 wherein is also not limited to metal level, can be also other conductive material layer, such as being heavily doped polysilicon etc.
Fig. 3, to Figure 9 shows that the schematic diagram of MEMS reflecting system in the different production phases, below in conjunction with shown in Fig. 2 to Fig. 9, introduces the method for making of MEMS reflecting system in detail.
Execution step S1: provide and there is the Semiconductor substrate that target is electrically connected to region.
Vertical view as shown in Figure 3, is formed with a plurality of targets and is electrically connected to region 21 in this Semiconductor substrate 20, it is for example pattern or the conductive plunger of metal interconnect structure that this target is electrically connected to region.In addition, the plurality of target is electrically connected in region 21, a part of electrical interconnection, in addition a part of electrical interconnection.For example, along shown in cut-open view Fig. 4 of the A-A face in Fig. 3, target be electrically connected to region 21 for fixed electorde electrical interconnection, another one for and as the catoptron electrical interconnection of movable electrode.
Execution step S2: form the first sacrifice layer on described substrate, the first sacrifice layer forms a plurality of first windows described in etching, fills described first window and forms metal interconnect structure and the first support column that is electrically connected to region conducting with different target.
As shown in Figure 5, the material of the first sacrifice layer 22 can be the material that is easy to remove, in the present embodiment, be agraphitic carbon, in agraphitic carbon, form the technique of window with reference to existing technique, window wherein can be through hole or groove, for example, if the target in Semiconductor substrate 20 is electrically connected to the pattern that region is metal interconnect structure, the metal interconnect structure 23 that correspondence is connected and fixed electrode is conductive plunger wherein, and the window that this step forms is through hole; If the target in Semiconductor substrate 20 is electrically connected to the conductive plunger that region is metal interconnect structure, the metal interconnect structure 23 that correspondence is connected and fixed electrode is pattern wherein, and the window that this step forms is groove.The shape of the first support column 24 can be conductive plunger, can be also the pattern of metal interconnect structure.
Execution step S3: distinguish deposited metal and dielectric layer from bottom to top, etching form respectively the fixed electorde, the two ends that are positioned on metal interconnect structure lay respectively at overarm on the first support column and with the fixing barrier sheet in described overarm two ends, remove described barrier sheet near the dielectric layer of free end portion.
As shown in Figure 6, the two ends 25a of overarm 25 drops on respectively on the first support column 24, and fixed electorde 26 drops on the metal interconnect structure (conductive plunger or pattern) forming in step S2.Except above-mentioned overarm 25, fixed electorde 26, this step has also formed the barrier sheet 27 that is positioned at overarm 25 two ends, two barrier sheets 27 of this barrier sheet 27 for extending from 25 one end of hanging oneself from a beam, and these two barrier sheets 27 can relatively described overarm 25 symmetries or asymmetric.In other embodiment, barrier sheet 27 can be two barrier sheets 27 that extend from 25 two ends of hanging oneself from a beam respectively, in other words, one of one end barrier sheet 27, the concrete structure of these two barrier sheets 27 can relatively described overarm 25 symmetries or asymmetric.Can find out, the fixed electorde 26 that this step forms is positioned at sustained height with overarm 25.In other embodiment, this fixed electorde 26 also can be positioned in the Semiconductor substrate 20 that step S1 provides.
In addition, with reference to along the cut-open view of the B-B straight line in Fig. 6, (the upper left corner barrier sheet 27 α angle that turns clockwise is coplanar with overarm 25 to barrier sheet 27, the barrier sheet β angle that turns clockwise in the lower right corner is coplanar with overarm 25 to barrier sheet 27) shown in Fig. 7, this overarm 25 and barrier sheet 27 include two-layer: relatively away from the dielectric layer 252 of Semiconductor substrate 20 and the conductive material layer 251 of relative close Semiconductor substrate 20.The free end 27a(of barrier sheet 27 away from fixing these ends of overarm 25) only there is conductive material layer 251, the removal method of the dielectric layer 252 on it can be removed for wet method, also can adopt photoetching, dry method to remove.Dielectric layer 252 on fixed electorde 26, can retain, and also can remove.
In this step, the material of dielectric layer 252 can be selected existing dielectric material, for example, be monox, and the material of conductive material layer 251 can be metal, and for example copper, aluminium, titanium, silver or its composition, can be also other conductive material, such as polysilicon etc.
Execution step S4: form the second sacrifice layer on described metal level, dielectric layer and the first sacrifice layer, the second sacrifice layer and dielectric layer form Second Window described in etching, fills described Second Window and forms the second support column that connects described overarm.
As shown in Figure 8, the material of the second sacrifice layer 28 forming on architecture basics shown in Fig. 7 is preferably identical with the first sacrifice layer 22 materials, to remove in same technique.In the present embodiment, the material of this second sacrifice layer 28 is also agraphitic carbon.The shape of the second support column 29 can be identical with the shape of the first support column 24, also can be different, preferably drop on the mid point of overarm 25.
Execution step S5: form catoptron on described the second sacrifice layer and the second support column.
The material of the catoptron 30 that as shown in Figure 9, this step forms can be aluminium, silver, titanium or its composition.
Execution step S6: remove the first sacrifice layer and the second sacrifice layer and form MEMS reflecting system.
This step has completed the release of MEMS reflecting system.When the material of the first sacrifice layer 22 and the second sacrifice layer 28 is agraphitic carbon, removal method is ashing method, after ashing, has formed the cavity 2a that is positioned at Semiconductor substrate 20.
So far, completed the making of MEMS reflecting system, each step is made the parts of a plurality of above-mentioned MEMS reflecting systems, has completed the making of MEMS reflecting system array, and preferably, the plurality of MEMS reflecting system is formed on a block semiconductor substrate.
Embodiment bis-
The MEMS reflecting system that the present embodiment provides, the method for making of this reflecting system and comprise that the reflecting system array of a plurality of reflecting systems is roughly identical with embodiment mono-.Difference is: at step S2, etching the first sacrifice layer 22 forms first window, while filling described first window, also form the 3rd support column 31(with reference to shown in Figure 10), when etching conductive material layer 251 and dielectric layer 252 form barrier sheet 27, described barrier sheet 27 is positioned on described the 3rd support column 31.In other words, as shown in figure 10, barrier sheet 27 is not only supported by the first support column 24, also by the 3rd support column 31, is supported.Described the 3rd support column 31 can be electrically connected to target region 21 conductings, and the pattern of this conducting or conductive plunger are electrically connected to region 21 and are electrically connected to the target of described the first support column 24 conductings.
Preferably, at step S3, remove in dielectric layer 252 steps of described barrier sheet 27 near free end 27a part: the region of removal is to described barrier sheet 27 free end 27a from the 3rd support column 31 strong points.In other words, this barrier sheet 27 comprises the second portion of the 3rd support column 31 strong points to the first of free end 27a and the 3rd support column 31 strong points to 25 stiff ends of hanging oneself from a beam, described first only has conductive material layer 251, and described second portion comprises the conductive material layer 251 and the relative dielectric layer 252 away from described Semiconductor substrate 20 of relatively close described Semiconductor substrate 20.So, at barrier sheet 27, return in equilibrium state process, this barrier sheet 27 is due to thinner, and rigidity reduces, and deformability increases, and the strong point of the 3rd support column 31, as new fulcrum, so, is conducive to rebounding of this barrier sheet 27 in the process of rebounding.
Embodiment tri-
The MEMS reflecting system that the present embodiment provides, the method for making of this reflecting system and comprise that the reflecting system array of a plurality of reflecting systems is roughly identical with embodiment mono-, two.Difference is: as shown in figure 11, in reflecting system, fixed electorde 26 is one, the corresponding course of work is: between fixed electorde 26 and catoptron 30, apply electrical opposite voltage, catoptron 30 is subject to fixed electorde 26 and attracts, drive overarm 25 to reverse and deflect clockwise, due to the existence of barrier sheet 27, this catoptron 30 can excessive deflection and with fixed electorde 26 collisions; Dead electricity back mirror 30 counterclockwise twist recovery under the effect of the twist recovery power of overarm 25 arrives equilibrium position; Between fixed electorde 26 and catoptron 30, apply electrical identical voltage, catoptron 30 is subject to fixed electorde 26 to be repelled, drive overarm 25 to reverse and deflect counterclockwise, due to the existence of barrier sheet 27, this catoptron 30 can excessive deflection and with fixed electorde 26 collisions; Dead electricity back mirror 30 clockwise twist recovery under the effect of the twist recovery power of overarm 25 arrives equilibrium position.
Similar with embodiment mono-, can be for extending two barrier sheets 27 from 25 one end of hanging oneself from a beam, these two barrier sheets 27 can be relatively described overarm 25 symmetrical or asymmetric, or two barrier sheets 27 that extend from 25 two ends of hanging oneself from a beam respectively, in other words, one of one end barrier sheet 27, the concrete structure of these two barrier sheets 27 can relatively described overarm 25 symmetries or asymmetric.
Embodiment tetra-
Different from embodiment above, in the present embodiment, barrier sheet 27 ' is to be no longer integrally formed with overarm 25, has adopted separation design between the two.Concrete, as shown in figure 12, this MEMS reflecting system, comprises fixed electorde 26 and catoptron 30 as movable electrode; Described fixed electorde 26 is oppositely arranged with described catoptron 30, and described catoptron 30 is by overarm 25 supports, so that described catoptron 30 can deflection after being applied in voltage.Described MEMS reflecting system also has barrier sheet 27 ', described barrier sheet 27 ' is positioned at first the position that (fixed electorde 26 relatively) contacts with catoptron 30, to prevent described catoptron 30 excessive deflection, contact with fixed electorde 26, in deflection, the surface at the position directly contacting with described catoptron 30 of described barrier sheet 27 ' is conductive material, such as metal (comprising the good metallic compound of electric conductivity or metal composites).In the present embodiment, the free end 27a that the position directly contacting with described catoptron 30 of described barrier sheet 27 ' is this barrier sheet 27 '.Because barrier sheet 27 ' is conductive material with the position of catoptron 30 collisions, thereby, even with catoptron 30 multiple impacts after, the colliding part of barrier sheet 27 ' can accumulate static charge and cause catoptron 30 absorption on it yet.
In the present embodiment, barrier sheet 27 ' is supported by the 3rd support column 31 being arranged in Semiconductor substrate, and preferably, the strong point of the 3rd support column 31 is not positioned at this upper position directly contacting with described catoptron 30 of barrier sheet 27 ', i.e. free end 27a.
As a kind of preferably embodiment, described barrier sheet 27 ' can be connected into a circuit, such as grounding circuit, further to accelerate to collide the derivation of electric charge.Better mode is that the external power supply of described barrier sheet 27 ', such as the power supply of voltage is provided for catoptron 30; Deflection completes and while needing catoptron 30 to reset, this power supply applies with the voltage of catoptron 30 same types to barrier sheet 27 '.In other embodiment, the polarity of this external power supply also can be identical with the polarity of fixed electorde 26.
For convenience of making, described overarm 25, fixed electorde 26 can be positioned at same layer with described barrier sheet 27 ', by same metal deposition, etch step, can realize the making of a plurality of parts like this, are conducive to cost-saving, shortening Production Time.
Certain parts that in embodiment tetra-, emphasis is not mentioned or a certain position of parts, all can adopt and the same or similar structure of embodiment, here description one by one above.
In the present invention, each embodiment adopts laddering literary style, and emphasis is described the difference with previous embodiment, and the same structure in each embodiment and method for making are with reference to the same section of previous embodiment.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible change and modification to technical solution of the present invention; therefore; every content that does not depart from technical solution of the present invention; any simple modification, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, all belong to the protection domain of technical solution of the present invention.
Claims (20)
1. a MEMS reflecting system, comprising: be formed at the cavity of Semiconductor substrate, be positioned at the fixed electorde of described cavity and catoptron as movable electrode; Described fixed electorde and described catoptron are oppositely arranged, and described catoptron is by the support of hanging oneself from a beam, so that described catoptron can deflection; Described MEMS reflecting system also has for preventing the barrier sheet of described catoptron excessive deflection; It is characterized in that, the surface at the position of the described barrier sheet at least directly contacting with described catoptron is conductive material layer.
2. MEMS reflecting system according to claim 1, is characterized in that, described overarm comprises conductive material layer and dielectric layer, and described dielectric layer is than the more close described catoptron of described conductive material layer; The position of the described barrier sheet at least directly contacting with described catoptron only has conductive material layer.
3. MEMS reflecting system according to claim 2, is characterized in that, described dielectric layer is monox, and described conductive material layer is metal level.
4. MEMS reflecting system according to claim 1, is characterized in that, the two ends of described overarm are supported by two the first support columns that are positioned at described Semiconductor substrate, and centre is hanging structure; Described overarm two described in there is the second support column between the strong point that supports of the first support column, described the second support column is used for supporting described catoptron.
5. MEMS reflecting system according to claim 4, is characterized in that, described the second support column be positioned at described overarm two described in the mid point of the strong point that supports of the first support column.
6. according to the MEMS reflecting system described in claim 1 or 4 or 5, it is characterized in that, described barrier sheet is connected to the two ends of described overarm, and is electrically connected by described overarm and described catoptron.
7. MEMS reflecting system according to claim 6, is characterized in that, the barrier sheet of every end of described overarm has two and relatively described overarm symmetry.
8. MEMS reflecting system according to claim 6, is characterized in that, described overarm, described fixed electorde and described barrier sheet are positioned at same layer.
9. MEMS reflecting system according to claim 6, is characterized in that, is also provided with the 3rd support column in described Semiconductor substrate, and described barrier sheet is supported by the first support column and described the 3rd support column.
10. MEMS reflecting system according to claim 9, is characterized in that, described the 3rd support column is supported between described the first support column and the free end of described barrier sheet, and the free-ended surface of described barrier sheet is conductive material layer.
11. according to the MEMS reflecting system described in claim 1 or 4 or 5, it is characterized in that, described Semiconductor substrate has metal interconnect structure, between described barrier sheet and described overarm, is separation design, and described barrier sheet and described metal interconnect structure conduct.
12. MEMS reflecting systems according to claim 11, it is characterized in that, described barrier sheet is supported by the 3rd support column being arranged in described Semiconductor substrate, and described barrier sheet conducts by the metal interconnect structure of described the 3rd support column and described Semiconductor substrate.
13. MEMS reflecting systems according to claim 1, is characterized in that, described fixed electorde is two, and relatively described overarm is symmetrical.
14. 1 kinds of MEMS reflecting system arrays that comprise the MEMS reflecting system described in any one in a plurality of the claims 1 to 13.
15. MEMS reflecting system arrays according to claim 14, is characterized in that, described a plurality of MEMS reflecting systems are formed in same semi-conductive substrate.
The method for making of 16. 1 kinds of MEMS reflecting systems, is characterized in that, comprising:
Provide and there is the Semiconductor substrate that target is electrically connected to region;
On described substrate, form the first sacrifice layer;
Described in etching, the first sacrifice layer forms a plurality of first windows, fills described first window and forms metal interconnect structure and the first support column that is electrically connected to region conducting with different target;
Distinguish layer of conductive material and dielectric layer from bottom to top, etching forms respectively the barrier sheet that the fixed electorde, the two ends that are positioned on metal interconnect structure lay respectively at the overarm on the first support column and are connected with described overarm two ends;
Remove described barrier sheet near the dielectric layer of free end portion;
On described metal level, dielectric layer and the first sacrifice layer, form the second sacrifice layer;
Described in etching, the second sacrifice layer and dielectric layer form Second Window, fill described Second Window and form the second support column that connects described overarm;
On described the second sacrifice layer and the second support column, form catoptron;
Remove the first sacrifice layer and the second sacrifice layer and form MEMS reflecting system.
17. method for makings according to claim 16, is characterized in that, the first sacrifice layer forms first window described in etching, while filling described first window, also form the 3rd support column, when etching conductive material layer and dielectric layer form barrier sheet, described barrier sheet is positioned on described the 3rd support column.
18. method for makings according to claim 16, is characterized in that, the material of described the first sacrifice layer and the second sacrifice layer is all agraphitic carbon, and removal method is ashing method.
19. method for makings according to claim 16, is characterized in that, remove that described barrier sheet is removed by wet method near the dielectric layer of free end portion or photoetching, dry etching form.
20. method for makings according to claim 17, is characterized in that, remove in the dielectric layer step of described barrier sheet near free end portion: the region of removal is to described barrier sheet free end from the 3rd support column strong point.
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| CN111247472A (en) * | 2017-10-30 | 2020-06-05 | 华为技术有限公司 | Multistage MEMS optical switch unit and optical cross device |
| CN112771428A (en) * | 2018-09-29 | 2021-05-07 | 依格耐特有限公司 | MEMS display device with vertical hinge |
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| CN103926689B (en) | 2017-12-01 |
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