CN103924291A - Flat plate type sapphire crystal growth device and method - Google Patents
Flat plate type sapphire crystal growth device and method Download PDFInfo
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- CN103924291A CN103924291A CN201410171387.7A CN201410171387A CN103924291A CN 103924291 A CN103924291 A CN 103924291A CN 201410171387 A CN201410171387 A CN 201410171387A CN 103924291 A CN103924291 A CN 103924291A
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Abstract
The invention discloses a flat plate type sapphire crystal growth device. The flat plate type sapphire crystal growth device comprises a first smelting furnace, a second smelting furnace and a crystal growth slot, wherein the first smelting furnace is used for accommodating melt; the first smelting furnace is provided with a first through hole; the second smelting furnace is provided with a second through hole which is lower than the first through hole; one end of the crystal growth slot is an inlet, and the other end of the crystal growth slot is an outlet; the inlet is communicated with the first through hole, and the outlet is communicated with the second through hole; the crystal growth slot is used for accommodating crystal seeds. The invention further discloses a flat plate type sapphire crystal growth method which is used for crystallizing through crystal seeds arranged by flowing through a plane to form the flat plate type sapphire crystals. In the flat plate type sapphire crystal growth device disclosed by the invention, the crystal seeds are arranged in the crystal growth slot; by virtue of melt flowing and crystal seed reaction, the sapphire crystals are generated; the crystal growth slot is arranged in a planar manner, so that the melt flows through the upper parts of the crystal seeds to crystallize layer by layer to form the flat plate type crystals.
Description
Technical field
The present invention relates to crystal generating apparatus, especially relevant with structure and the method for generating apparatus that can directly generate plate sapphire crystal.
Background technology
Along with scientific and technological fast development, functional mobile phone cannot meet the demand of people's routine work life.After smart mobile phone is released, functional mobile phone is replaced by the smart mobile phone with touch-screen gradually, and mechanical keyboard and button on conventional mobile phone quit the stage gradually, the substitute is the virtual touch formula keyboard and the button that are positioned on touch-screen.
The technology that touch-screen relates at present has contained the technical fields, particularly Material Field such as electronics, material, and sapphire has started to be applied on touch-screen, and application is more and more extensive, replaces traditional glass the most completely.
Long brilliant technique is the committed step in fabricated from sapphire process, in the long brilliant technique of existing sapphire, be relatively typically Chai Shi and draw formulation: first heating raw materials is melted to the molten soup of formation to fusing point, recycle a sapphire crystal seed and touch molten soup surface, in the solid-liquid interface of crystal seed and molten soup because temperature head formed cold.So molten soup starts to solidify and the monocrystalline of growth and crystal seed same crystal structure at seed surface.Crystal seed simultaneously with the utmost point slowly speed up draw high, and follow with certain rotating speed rotation, along with upwards drawing high of crystal seed, molten soup freezes solidly in the liquid-solid interface of crystal seed gradually, and then forms an axisymmetric monocrystalline crystal ingot.
Realize the device of this technological process, as shown in Figure 1, be equipped with melt 14 in crucible 11, there is a lifting rod 12 that can rotate with lifting crucible 11 tops, and there is a chuck lower end of lifting rod 12, and a crystal seed 13 is housed on it.Reduce lifting rod 12, crystal seed 13 is inserted in melt 14, as long as the temperature of melt 14 is moderate, crystal seed 13 neither melts, do not grow up, then slowly upwards lift and rotate lifting rod 12, crystal seed 13 is followed and slowly upwards lift and rotate yet, slowly reduce the heating power of crystal seed 13, crystal seed 13 is long thick gradually simultaneously.Regulate carefully crystal seed 13 heating powers, just can obtain the crystal 15 of required diameter.In this technological process, whole growing apparatus need be placed in an outer cover, to guarantee the crystal needed gas of 15 growing environment and pressure.
The sapphire that above-mentioned traditional method forms is cylinder shape, and the sapphire cover plate adopting in touch screen technology field is plate, so just need to cut above-mentioned cylindrical sapphire, in the process of cutting, will waste a large amount of sapphire material.And sapphire above-mentioned production process is because its fusing point is higher, cause expending the very huge energy.Therefore, the defect of prior art is that sapphire utilization ratio is not high, has greatly wasted starting material and the energy.
Summary of the invention
For problems of the prior art, object of the present invention is for providing a kind of long brilliant apparatus and method of plate sapphire that can improve sapphire utilization ratio.
For achieving the above object, the invention provides following technical scheme:
The long brilliant device of plate sapphire, comprising:
The first smelting furnace, described the first smelting furnace is for accommodating melt, and described the first smelting furnace has the first port;
The second smelting furnace, described the second smelting furnace has the second port, and described the second port is lower than described the first port;
Long brilliant groove, the brilliant groove of described length one end is entrance, and the other end is outlet, and described entrance is communicated with described the first port, and described outlet is communicated with the second port, and the brilliant groove of described length is for accommodating crystal seed.
Further, between described the first smelting furnace and the brilliant groove of described length, be provided with the first flow guiding structure, described the first port is communicated with by this first flow guiding structure with the entrance of the brilliant groove of described length.
Further, described the first guiding structure is a drainage trough being obliquely installed.
Further, the inwall of described drainage trough is provided with nichrome wire, and this nichrome wire heats described drainage trough.
Further, between described the second smelting furnace and the brilliant groove of described length, be provided with the second flow guiding structure, described the second port is communicated with by this second flow guiding structure with the outlet of the brilliant groove of described length.
Further, described the second flow guiding structure is a drainage trough being obliquely installed.
Further, the inwall of described drainage trough is provided with nichrome wire, and this nichrome wire heats described drainage trough.
Further, between described the first smelting furnace and described the second smelting furnace, be also communicated with and be provided with conduit, under a power set drives by this conduit by the melt Conveying in described the second smelting furnace to described the first smelting furnace.
Further, described the first port is the uncovered of described the first smelting furnace top, and described the second port is the uncovered of described the second smelting furnace top, and described conduit two is uncovered described in being communicated with two respectively.
Further, the inwall of described conduit is provided with nichrome wire, and this nichrome wire is to described heating conduit.
Further, the brilliant groove of described length is obliquely installed, and makes described entrance higher than described outlet.
Further, the height of the brilliant groove of described length is adjusted by a hoisting appliance.
Further, the bottom of described hoisting appliance is arranged on a bearing.
Further, the inwall of the brilliant groove of described length is provided with nichrome wire, and this nichrome wire is to the brilliant groove heating of described length.
Further, described the first smelting furnace is identical with described the second furnace construction, and described the first smelting furnace bottom is arranged on a base.
Further, the brilliant groove of described length is rectangular tank.
For achieving the above object, the present invention also provides following technical scheme:
The long crystal method of plate sapphire, comprises the steps:
(1) heating raw materials is melted for melt;
(2) this melt has applicable temperature T 1;
(3) this melt is flow through on the crystal seed top of a plane layout, part is formed crystal;
(4) continue described step (3), until crystallization content reaches requirement.
Further, described T1 is 2100-2200 ℃.
Further, the temperature of described melt-flow when described crystal seed is T5.
Further, described T5 is 2020-2045 ℃.
Further, described method also comprises step (5): use is reclaimed in the melt circulation of not forming crystal.
Further, working cycle temperature is T4.
Further, described T4 is 2100-2200 ℃.
Compared with prior art, plate sapphire of the present invention is grown in brilliant device in the present invention, in the long brilliant device of plate sapphire of the present invention, in long brilliant groove, crystal seed is set, trickling by melt is reacted with crystal seed, thereby generates sapphire crystal, and long brilliant groove plane layout, make melt-flow through this successively crystallization of crystal seed top, form plate crystal, when using as cover plate, material use efficiency is high, and processing link is few, thereby economize on resources, reduce and consume.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is described in further detail:
Fig. 1 is existing sapphire crystal generating apparatus structural representation;
Fig. 2 is an example structure schematic diagram of the long brilliant device of the plate sapphire of the present invention;
Fig. 3 is another example structure schematic diagram of the long brilliant device of the plate sapphire of the present invention;
Fig. 4 is the another example structure schematic diagram of the long brilliant device of the plate sapphire of the present invention;
Fig. 5 is the first view of the long brilliant device of the plate sapphire of the present invention;
Fig. 6 is the second view of the long brilliant device of the plate sapphire of the present invention.
Embodiment
The exemplary embodiments that embodies feature & benefits of the present invention will describe in detail in the following description.Be understood that the present invention can have various variations on different embodiment, it neither departs from the scope of the present invention, and explanation wherein and accompanying drawing be when the use that explain in itself, but not in order to limit the present invention.
The long crystal method of plate sapphire of the present invention, comprises the steps:
(1) heating raw materials is melted for melt;
(2) this melt has applicable temperature T 1;
(3) this melt is flow through on the crystal seed top of a plane layout, part is formed crystal;
(4) continue described step (3), until crystallization content reaches requirement.
For comprehensive utilization raw material, save energy, also can comprise step (5): use is reclaimed in the melt circulation of not forming crystal.Temperature in the method is important parameter, in introduction below, will be described in detail.
As shown in Fig. 2-Fig. 4, the long brilliant device 2 of plate sapphire of the present invention comprises the first smelting furnace 21, the second smelting furnace 22 and long brilliant groove 23.Wherein, in the first smelting furnace 21, be equipped with melt, the temperature of this melt is T1, and the first smelting furnace 21 has the first port.The second smelting furnace 22 has the second port, and the second port is lower than the first port.Long brilliant groove 23 is rectangular tank, and one end is entrance, and the other end is outlet, and entrance is communicated with the first port, and outlet is communicated with the second port, in long brilliant groove 23, is equipped with crystal seed (not shown).Melt-flow in this first smelting furnace 21, after long brilliant groove 23, enters the second smelting furnace 22, and then is recycled in the first smelting furnace 21, generates plate crystal under the effect of crystal seed.
In the first smelting furnace 21, there is heating unit, so that wherein melt temperature reaches T1, the crystal difference that this numerical value is corresponding different, when this crystal is sapphire, T1 is 2100-2200 ℃.
Concrete structure of the present invention is not limited, as long as can realize above-mentioned functions.Conventionally the angle from economizing on resources and raising the efficiency, need to arrange the melt recycle system, to utilize incessantly the melt of this raw material.
The structure of one embodiment of the invention as shown in Figure 2, for improving versatility, the first smelting furnace 21 is identical with the second smelting furnace 22 structures, for making the first port on the first smelting furnace 21 higher than the second port on the second smelting furnace 22, one base 27 is installed in the bottom of the first smelting furnace 21, the concrete structure of base 27 is not limit, as long as can support the first smelting furnace 21.
For convenience of arranging, in the present embodiment, the first port is the uncovered of the first smelting furnace 21 tops, and the second port is the uncovered of the second smelting furnace 22 tops.In the second smelting furnace 22, there is heating unit, so that wherein melt temperature reaches T6, the crystal difference that this numerical value is corresponding different, when this crystal is sapphire, the optimum value of T6 is 2100-2200 ℃.
For realizing above-mentioned melt circulation, between the first smelting furnace 21 and the second smelting furnace 22, be also communicated with and be provided with conduit 26, in a power set (not shown, can be pump or other equipment), drive lower this conduit 26 that passes through by melt Conveying to the first smelting furnace 21 in the second smelting furnace 22.In the present embodiment, conduit 26 two are communicated with respectively the uncovered of the uncovered of the first smelting furnace 21 and the second smelting furnace 22.In addition, for preventing the too fast reduction of melt temperature, at the inwall of conduit 26, be provided with nichrome wire, this nichrome wire is to conduit 26 heating, guarantee the to flow through melt temperature of conduit 26 of take is T4, and crystal corresponding to this numerical value is different, and when this crystal is sapphire, the optimum value of T4 is 2100-2200 ℃.
In the present embodiment, between the first smelting furnace 21 and long brilliant groove 23, be provided with the first flow guiding structure 24, the first ports and be communicated with by this first flow guiding structure 24 with the entrance of long brilliant groove 23.For ease of arranging, this first guiding structure 24 is a drainage trough being obliquely installed.Inwall at this drainage trough 24 is provided with nichrome wire, and this nichrome wire is to drainage trough 24 heating, and guarantee the to flow through melt temperature of drainage trough 24 of take is T2, and crystal corresponding to this numerical value is different, and when this crystal is sapphire, the optimum value of T2 is 2050-2100 ℃.
In the present embodiment, between the second smelting furnace 22 and long brilliant groove 23, be provided with the second flow guiding structure 25, the second ports and be communicated with by this second flow guiding structure 25 with the outlet of long brilliant groove 23.For ease of arranging, this second flow guiding structure 25 is a drainage trough being obliquely installed.The inwall of drainage trough 25 is provided with nichrome wire, and this nichrome wire is to drainage trough 25 heating, and guarantee the to flow through melt temperature of drainage trough 25 of take is T3, and crystal corresponding to this numerical value is different, and when this crystal is sapphire, the optimum value of T3 is 2100-2150 ℃.
In the present embodiment, the inwall of long brilliant groove 23 is provided with nichrome wire, and this nichrome wire is to long brilliant groove 23 heating, and guarantee the to flow through melt temperature of long brilliant groove 23 of take is T5, the crystal difference that this numerical value is corresponding different, when this crystal is sapphire, the optimum value of T5 is 2020-2045 ℃.In long brilliant groove 23 bottoms, bearing 28 is also installed, to support long brilliant groove 23, and makes long brilliant groove 23 there is corresponding height.The concrete structure of bearing 28 is not limited, as long as can reach above-mentioned functions.
As shown in Figure 3, be another embodiment of the present invention.In this embodiment, long brilliant groove 23 is obliquely installed, and long brilliant groove 23 trickling faces are α with the angle of horizontal plane, thereby make entrance higher than outlet, make melt-flow more reliable through long brilliant groove 23, and flow velocity can be adjusted by this angle.
As shown in Figure 4, be another embodiment of the present invention.In this embodiment, the height of growing brilliant groove 23 is adjusted by a hoisting appliance 29.Now, for convenience of arranging, the bottom of hoisting appliance 29 is arranged on bearing 28.The concrete structure of hoisting appliance 29 is not limited, can be lifting frame, can be screw rod frame yet, as long as can reach the function that drives long brilliant groove 23 liftings.
When this hoisting appliance 29 is not set, as shown in Figure 5, when crystal 30 grows to certain thickness, melt can trickle not smooth.Arrange after this hoisting appliance 29, as shown in Figure 6, when crystal 30 grows to certain thickness, by this hoisting appliance 29, adjust long brilliant groove 23 height, melt is passed through glibly therein.
The present invention compared with prior art, in the long brilliant device 2 of plate sapphire of the present invention, the interior crystal seed 30 that arranges of long brilliant groove 23, reacts with crystal seed 30 by the trickling of melt, thereby generation crystal, and long brilliant groove 23 plane layouts, make melt-flow through this successively crystallization of crystal seed 30 tops, form plate crystal, when using as cover plate, material use efficiency is high, processing link is few, thereby economizes on resources, and reduces and consumes.
Technical scheme of the present invention is disclosed as above by preferred embodiment.Those skilled in the art should recognize in the situation that do not depart from change and the retouching that scope and spirit of the present invention that the appended claim of the present invention discloses are done, within all belonging to the protection domain of claim of the present invention.
Claims (23)
1. the long brilliant device of plate sapphire, is characterized in that, comprising:
The first smelting furnace, described the first smelting furnace is for accommodating melt, and described the first smelting furnace has the first port;
The second smelting furnace, described the second smelting furnace has the second port, and described the second port is lower than described the first port;
Long brilliant groove, the brilliant groove of described length one end is entrance, and the other end is outlet, and described entrance is communicated with described the first port, and described outlet is communicated with the second port, and the brilliant groove of described length is for accommodating crystal seed.
2. the long brilliant device of plate sapphire as claimed in claim 1, is characterized in that, between described the first smelting furnace and the brilliant groove of described length, be provided with the first flow guiding structure, described the first port is communicated with by this first flow guiding structure with the entrance of the brilliant groove of described length.
3. the long brilliant device of plate sapphire as claimed in claim 2, is characterized in that, described the first guiding structure is a drainage trough being obliquely installed.
4. the long brilliant device of plate sapphire as claimed in claim 3, is characterized in that, the inwall of described drainage trough is provided with nichrome wire, and this nichrome wire heats described drainage trough.
5. the long brilliant device of plate sapphire as claimed in claim 1, is characterized in that, between described the second smelting furnace and the brilliant groove of described length, be provided with the second flow guiding structure, described the second port is communicated with by this second flow guiding structure with the outlet of the brilliant groove of described length.
6. the long brilliant device of plate sapphire as claimed in claim 5, is characterized in that, described the second flow guiding structure is a drainage trough being obliquely installed.
7. the long brilliant device of plate sapphire as claimed in claim 6, is characterized in that, the inwall of described drainage trough is provided with nichrome wire, and this nichrome wire heats described drainage trough.
8. plate sapphire as claimed in claim 1 is grown brilliant device, it is characterized in that, between described the first smelting furnace and described the second smelting furnace, be also communicated with and be provided with conduit, under a power set drives by this conduit by the melt Conveying in described the second smelting furnace to described the first smelting furnace.
9. the long brilliant device of plate sapphire as claimed in claim 8, is characterized in that, described the first port is the uncovered of described the first smelting furnace top, and described the second port is the uncovered of described the second smelting furnace top, and described conduit two is uncovered described in being communicated with two respectively.
10. the long brilliant device of plate sapphire as claimed in claim 9, is characterized in that, the inwall of described conduit is provided with nichrome wire, and this nichrome wire is to described heating conduit.
The long brilliant device of 11. plate sapphire as claimed in claim 1, is characterized in that, the brilliant groove of described length is obliquely installed, and makes described entrance higher than described outlet.
The long brilliant device of 12. plate sapphire as claimed in claim 1, is characterized in that, the height of the brilliant groove of described length is adjusted by a hoisting appliance.
The long brilliant device of 13. plate sapphire as claimed in claim 12, is characterized in that, the bottom of described hoisting appliance is arranged on a bearing.
The long brilliant device of 14. plate sapphire as claimed in claim 1, is characterized in that, the inwall of the brilliant groove of described length is provided with nichrome wire, and this nichrome wire is to the brilliant groove heating of described length.
The long brilliant device of 15. plate sapphire as claimed in claim 1, is characterized in that, described the first smelting furnace is identical with described the second furnace construction, and described the first smelting furnace bottom is arranged on a base.
The long brilliant device of 16. plate sapphire as claimed in claim 1, is characterized in that, the brilliant groove of described length is rectangular tank.
17. 1 kinds of long crystal methods of plate sapphire, is characterized in that, comprise the steps:
(1) heating raw materials is melted for melt;
(2) this melt has applicable temperature T 1;
(3) this melt is flow through on the crystal seed top of a plane layout, part is formed crystal;
(4) continue described step (3), until crystallization content reaches requirement.
The long crystal method of 18. plate sapphire as claimed in claim 17, is characterized in that, described T1 is 2100-2200 ℃.
The long crystal method of 19. plate sapphire as claimed in claim 17, is characterized in that, the temperature of described melt-flow when described crystal seed is T5.
The long crystal method of 20. plate sapphire as claimed in claim 19, is characterized in that, described T5 is 2020-2045 ℃.
The long crystal method of 21. plate sapphire as claimed in claim 17, is characterized in that, described method also comprises step (5): use is reclaimed in the melt circulation of not forming crystal.
The long crystal method of 22. plate sapphire as claimed in claim 21, is characterized in that, working cycle temperature is T4.
The long crystal method of 23. plate sapphire as claimed in claim 22, is characterized in that, described T4 is 2100-2200 ℃.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410171387.7A CN103924291A (en) | 2014-04-25 | 2014-04-25 | Flat plate type sapphire crystal growth device and method |
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| CN201410171387.7A CN103924291A (en) | 2014-04-25 | 2014-04-25 | Flat plate type sapphire crystal growth device and method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105444567A (en) * | 2014-08-27 | 2016-03-30 | 谭美俊 | High-heat-preservation tin melting furnace |
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| US20140090592A1 (en) * | 2012-09-28 | 2014-04-03 | Apple Inc. | Continuous sapphire growth |
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| WO2009067641A2 (en) * | 2007-11-21 | 2009-05-28 | Saint-Gobain Ceramics & Plastics, Inc. | R-plane sapphire method and apparatus |
| CN101477949A (en) * | 2008-01-04 | 2009-07-08 | 陈科 | Silicon chip, manufacturing method and apparatus thereof |
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Application publication date: 20140716 |