CN103918144B - The manufacture method of electrostatic protection element - Google Patents
The manufacture method of electrostatic protection element Download PDFInfo
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- CN103918144B CN103918144B CN201280046961.5A CN201280046961A CN103918144B CN 103918144 B CN103918144 B CN 103918144B CN 201280046961 A CN201280046961 A CN 201280046961A CN 103918144 B CN103918144 B CN 103918144B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T4/00—Overvoltage arresters using spark gaps
- H01T4/10—Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel
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Abstract
The object of the present invention is to provide a kind of electrostatic protection element and manufacture method thereof, form the ESD that can tolerate more than 500 times with low cost and test (contact discharge test) and suppressed by ESD crest voltage to maintain the surface electrode of below 500V.Described electrostatic protection element (100) comprising: surface electrode (2a, 2b), is formed on ceramic substrate (1), and opposed across gap (4a); Glass-film (21a, 21b), is formed on surface electrode, and the upper surface of covering surfaces electrode (2a-3,2b-3) and two sides (2a-4,2b-4), and opposed across the gap (4b) connected with gap (4a); And electrostatic protection film (5); have central portion (5c) and both sides (5a, 5b), central portion (5c) is arranged at gap (4a, 4b), and both sides are overlapped in the upper surface (21a-2,21b-2) of glass-film; wherein, the material of surface electrode is copper-nickel film or copper-nickel-silverskin.
Description
Technical field
The present invention relates to electrostatic protection element and manufacture method thereof.
Background technology
In recent years, have employed electrostatic protection element with superpotentially affecting of protecting electronic equipment not cause by extraneous noise etc.Electrostatic protection element has across the opposed surface electrode in gap and the electrostatic protection film etc. being arranged at described gap; in described electronic equipment; electrostatic protection element is arranged on and is likely applied between described superpotential circuit and ground connection; when described circuit is applied in described overvoltage; by (i.e. electrostatic protection film) generation electric discharge between described surface electrode, thus from electronic equipment described in described overvoltage protection.
In order to make described electrostatic protection element reliably play electrostatic protection function, require that described electrostatic protection element can tolerate strict ESD (Electro-StaticDischarge) test (contact discharge test).Particularly for the electrostatic protection element being applied to vehicle-mounted electronic equipment etc.; be required to meet following condition: even if enforcement more than 500 times ± 8kV contact discharge test (with reference to Fig. 9: specifically aftermentioned), ESD suppresses crest voltage also to maintain below 500V.
In addition, tungsten film is well known (patent documentation 1,2) as existing electrode material.Now, at the upper silk screen printing tungsten slurry of the raw cook (greensheet) of the sintering last stage as aluminum oxide substrate, and by the tungsten slurry after this silk screen printing at hydrogen (H
2)-nitrogen (N
2) mist atmosphere sintering furnace under the high temperature of peak temperature 1500 DEG C of degree sinter 3 ~ 5 hours.Its result, has made the aluminum oxide substrate being formed with tungsten film electrode.
Patent documentation 1: No. 1-501465, Japan Patent public affairs table publication JP-A
Patent documentation 2: flat No. 5-267809 of Japanese Laid-Open Patent Publication
But, when tungsten film is used as surface electrode material, because sintered at peak temperature 1500 DEG C in hydrogen-nitrogen mixing atmosphere by tungsten slurry, so need the sintering furnace of high temperature, and need strict control as the hydrogen of damp.Therefore, manufacturing equipment is expensive, and just likely personal injury occurs owing to ignoring manufacturing management, so also need strict manufacturing management, thus causes needing high cost to form tungsten film.Therefore, the manufacturing cost of electrostatic protection element increases.
Summary of the invention
The present invention in view of the above problems; object is to provide a kind of electrostatic protection element and manufacture method thereof, forms the ESD that can tolerate more than 500 times test (contact discharge test) and suppressed by ESD crest voltage to maintain the surface electrode of below 500V with low cost.
In order to solve the problem, present inventor is by conscientiously studying the material of surface electrode, and it found that, the material of surface electrode is suitable for adopting copper-nickel film and copper-nickel-silverskin.That is, the present invention has following feature.
Electrostatic protection element for the first invention solved the problem comprises: surface electrode, is formed at the surface of insulated substrate, and opposed across the first gap; Dielectric film, to be formed on described surface electrode and to cover upper surface and the two sides of described surface electrode, and across opposed with the second gap that described first gap is connected; And electrostatic protection film, have central portion and both sides, described central portion is arranged at described first gap and the second gap, and described both sides are overlapped in the upper surface of described dielectric film, and wherein, the material of described surface electrode is copper-nickel film or copper-nickel-silverskin.
In addition, the electrostatic protection element of the second invention, on the basis of the electrostatic protection element of the first invention, also comprises backplate, and described backplate is formed in the back side of described insulated substrate, and is electrically connected with described surface electrode.
In addition, the manufacture method of the electrostatic protection element of the 3rd invention is the method for the electrostatic protection element of manufacture first invention, it comprises: the first operation, at surface screen-printed copper-nickel slurry or the copper-nickel-silver paste of described insulated substrate, and the film of the film of the copper of described silk screen printing-nickel slurry or copper-nickel-silver paste is sintered in nitrogen atmosphere under the peak temperature of 800 DEG C ~ 950 DEG C of scopes, form surface electrode film; Second operation, with the mode silk screen printing dielectric film slurry of the upper surface and two sides that cover in described first operation the described surface electrode film formed, and sinters the film of the dielectric film slurry of described silk screen printing, forms dielectric film; 3rd operation, cuts off the described dielectric film formed in the described surface electrode film formed in described first operation and described second operation, forms described first gap and described second gap; And the 4th operation; silk screen printing electrostatic protection slurry; and the film of the electrostatic protection slurry of described silk screen printing is sintered; form described electrostatic protection film; described electrostatic protection film is made to be the shape with described central portion and described both sides; described central portion is arranged at described first gap and described second gap, and described both sides is overlapped in the upper surface of described dielectric film.
In addition, the manufacture method of the electrostatic protection element of the 4th invention is the method for the electrostatic protection element of manufacture second invention, it comprises: the first operation, at surface screen-printed copper-nickel slurry or the copper-nickel-silver paste of described insulated substrate, and the film of the film of the copper of described silk screen printing-nickel slurry or copper-nickel-silver paste is sintered in nitrogen atmosphere under the peak temperature of 800 DEG C ~ 950 DEG C of scopes, form surface electrode film; Second operation, at the back side screen printing electrode slurry of described insulated substrate, and sinters the film of the electrode slurry of described silk screen printing, forms described backplate; 3rd operation, with the mode silk screen printing dielectric film slurry of the upper surface and two sides that cover in described first operation the described surface electrode film formed, and sinters the film of the dielectric film slurry of described silk screen printing, forms dielectric film; 4th operation, cuts off the described dielectric film formed in the described surface electrode film formed in described first operation and described 3rd operation, forms described first gap and described second gap; And the 5th operation; silk screen printing electrostatic protection slurry; and the film of the electrostatic protection slurry of described silk screen printing is sintered; form described electrostatic protection film; described electrostatic protection film is made to be the shape with described central portion and described both sides; described central portion is arranged at described first gap and described second gap, and described both sides is overlapped in the upper surface of described dielectric film.
In addition; the manufacture method of the electrostatic protection element of the 5th invention is on the basis of the manufacture method of the electrostatic protection element of the 4th invention; described second operation is implemented after described first operation; and in described second operation, under the peak temperature that peak temperature when sintering described surface electrode film in than described first operation is low, sinter described backplate.
In addition, the manufacture method of the electrostatic protection element of the 6th invention is on the basis of the manufacture method of the electrostatic protection element of one of the three ~ five invention, and peak temperature when sintering described surface electrode film in described first operation is 900 DEG C.
According to the electrostatic protection element of the first or second invention; or three, the manufacture method of the electrostatic protection element of the 4th, the 5th or the 6th invention; owing to making the material of surface electrode be copper-nickel film or copper-nickel-silverskin, so ESD test (contact discharge test) of more than 500 times can be tolerated and suppress crest voltage to maintain below 500V ESD.In addition, due to can in nitrogen atmosphere under the peak temperature (such as peak temperature 900 DEG C) of 800 DEG C ~ 950 DEG C of scopes the film of sintered copper-nickel slurry or the film of copper-nickel-silver paste, form copper-nickel film or the copper-nickel-silverskin of surface electrode material, so do not need the sintering furnace of high temperature, and need not strict control damp.Therefore, manufacturing equipment is cheap, and owing to can not cause personal injury because of carelessness manufacturing management, so do not need strict manufacturing management, thus can form copper-nickel film or copper-nickel-silverskin with low cost.Therefore, the manufacturing cost of electrostatic protection element can be reduced.
In addition, although the ESD that these three kinds of films of copper-nickel film, copper-nickel-silverskin and tungsten film can both tolerate 500 times tests and meets the regulation of leakage current at 10 below μ A, but compared to tungsten film, when copper-nickel film and copper-nickel-silverskin, the variation applying the leakage current that number of times produces because of ESD voltage is very little, and the endurance for the insulating properties applying ESD voltage is high.In addition, compared to copper-nickel film, when copper-nickel-silverskin, the initial ESD voltage producing the peak value (significantly changing) of leakage current applies often, and the endurance for the insulating properties applying ESD voltage is high.
In addition; according to the manufacture method of the electrostatic protection element of the 5th invention; described second operation is implemented after the first operation; and owing to sintering described backplate, so can prevent backplate from going bad under the low peak temperature of the peak temperature of the second operation in than the first operation during sintered surface electrode film.Namely, suppose to implement the first operation after the second operation, then in the first operation below under high peak temperature during sintered surface electrode film, because the backplate be sintered in the second operation above also again sinters under high peak temperature, so there is the rotten danger of backplate.To this, if implement described second operation after the first operation, then there is no the danger that backplate is rotten.
In addition, when implementing described second operation after the first operation, material due to the surface electrode film sintered in the first operation is above copper-nickel film or copper-nickel-silverskin, even if so sinter backplate in the second operation below under air atmosphere, now, also marked change can not be there is in the outward appearance of the surface electrode film sintered in the first operation above.Therefore, backplate can be sintered under air atmosphere in the second operation below, easily form backplate.
Accompanying drawing explanation
Fig. 1 is the sectional drawing (the B-B line direction of arrow sectional drawing of Fig. 2) of the structure of the electrostatic protection element representing the embodiment of the present invention.
Fig. 2 is the vertical view (the A direction arrow view of Fig. 1) of the structure of the electrostatic protection element representing the embodiment of the present invention.
Fig. 3 (a) is the C-C line direction of arrow sectional drawing of Fig. 1, and Fig. 3 (b) is the D-D line direction of arrow sectional drawing of Fig. 1.
Fig. 4 is the table of the mix proportion (wt%) of the Cu-Ni of the surface electrode material of the electrostatic protection element representing the embodiment of the present invention and the mix proportion (wt%) of Cu-Ni-Ag.
Fig. 5 is the flow chart of the manufacturing process of the electrostatic protection element representing the embodiment of the present invention.
Fig. 6 is the first key diagram of the manufacturing process of the electrostatic protection element of the embodiment of the present invention.
Fig. 7 is the second key diagram of the manufacturing process of the electrostatic protection element of the embodiment of the present invention.
Fig. 8 is the 3rd key diagram of the manufacturing process of the electrostatic protection element of the embodiment of the present invention.
Fig. 9 is the figure of the method that ESD test (contact discharge test) is described.
Figure 10 represents that ESD suppresses the coordinate diagram of the measurement result of crest voltage.
Figure 11 is the coordinate diagram of the measurement result representing leakage current.
Figure 12 is the sectional drawing (the F-F line direction of arrow sectional drawing of Figure 13) of other structure example (structure example of glass-film part) of the electrostatic protection element representing the embodiment of the present invention.
Figure 13 is the vertical view (the E direction arrow view of Figure 12) of other structure example (structure example of glass-film part) of the electrostatic protection element representing the embodiment of the present invention.
Figure 14 (a) is the G-G line direction of arrow sectional drawing of Figure 12, and Figure 14 (b) is the H-H line direction of arrow sectional drawing of Figure 12.
Figure 15 is the sectional drawing (the J-J line direction of arrow sectional drawing of Figure 16) of other structure example (structure example of glass-film part) of the electrostatic protection element representing the embodiment of the present invention.
Figure 16 is the vertical view (the I direction arrow view of Figure 15) of other structure example (structure example of glass-film part) of the electrostatic protection element representing the embodiment of the present invention.
Description of reference numerals
1 ceramic substrate
1a substrate surface
1b substrate back
1c, 1d substrate end-face
2 surface electrode films
2a, 2b surface electrode
The end of 2a-1,2a-2,2b-1,2b-2 surface electrode
The upper surface of 2a-3,2b-3 surface electrode
The side of 2a-4,2a-5,2b-4,2b-5 surface electrode
The end face of 2a-6,2b-6 surface electrode
3a, 3b backplate
The end of 3a-1,3b-1 backplate
4a, 4b gap
5 electrostatic protection films
The sidepiece of 5a, 5b electrostatic protection film
The central portion of 5c electrostatic protection film
6a, 6b upper electrode
7 intermediate layers
8 diaphragms
The end of 8a, 8b diaphragm
9a, 9b end electrode
The end of 9a-1,9a-2,9b-1,9b-2 end electrode
10a, 10b plated nickel film
11a, 11b tin-plated coating film
21,21a, 21b glass-film
The end of 21a-1,21b-1 glass-film
The upper surface of 21a-2,21b-2 glass-film
100 electrostatic protection elements
200 samples (electrostatic protection element)
300,400 electrostatic protection elements
Embodiment
Below, embodiments of the invention are illustrated based on accompanying drawing.
First, the structure etc. of the electrostatic protection element of the embodiment of the present invention is described according to Fig. 1 ~ Fig. 4.
Electrostatic protection element 100 shown in Fig. 1 is surface-assembled elements on the printed base plate of vehicle-mounted electronic equipment etc.; what do not cause by extraneous noise etc. to protect electronic circuit (electronic component) that described printed base plate is assembled superpotentially affects; in described electronic equipment, described electrostatic protection element 100 is arranged on and is likely applied between described superpotential circuit and ground connection.
As shown in FIG. 1 to 3, on the surperficial 1a of the ceramic substrate 1 as insulated substrate, be formed with surface electrode 2a, 2b.Further, materials'use copper (Cu)-nickel (Ni) film of described surface electrode 2a, 2b or copper (Cu)-nickel (Ni)-Yin (Ag) film.Described copper-nickel film is the composite membrane comprising copper, nickel and glass, and copper-nickel-silverskin is the composite membrane comprising copper, nickel, silver and glass.The optimum value of the thickness of surface electrode 2a, 2b (copper-nickel film or copper-nickel-silverskin) is 17 ± 2 μm.
The material (copper-nickel film or copper-nickel-silverskin) of surface electrode 2a, 2b such as can use surface electrode materials A, the B shown in Fig. 4.Surface electrode materials A is the material of the composite membrane comprising copper, nickel and glass, and surface electrode material B is the material of the composite membrane comprising copper, nickel, silver and glass.Further, the Cu-Ni mix proportion of surface electrode materials A is Cu62.5wt%, Ni37.5wt%.The Cu-Ni-Ag mix proportion of surface electrode material B is Cu68.2wt%, Ni29.8wt%, Ag2wt%.
Further illustrate the structure of electrostatic protection element 100, as shown in FIG. 1 to 3, the back side 1b of ceramic substrate 1 is formed with backplate 3a, 3b.Surface electrode 2a, 2b are formed across the whole length direction of substrate surface 1a, and backplate 3a, 3b are formed in the two end portions of substrate back 1b.
At the central portion place of substrate surface 1a, between surface electrode 2a, 2b, be formed with gap (narrow part) 4a (the first gap).That is, surface electrode 2a, 2b is opposed across gap 4a.Carry out cut-out processing by cutting-off method effects on surface electrode films such as laser methods and form gap 4a, the width d of gap 4a is about 17 μm.
Above surface electrode 2a, (near gaps) is formed with the glass-film 21a as dielectric film, and above surface electrode 2b, (near gaps) is formed with the glass-film 21b as dielectric film.Gap (narrow part) 4b (the second gap) is formed between glass-film 21a, 21b.That is, glass-film 21a, 21b is opposed across gap 4b.Same with gap 4a, carry out cut-out processing by cutting-off methods such as laser methods to glass-film and form gap 4b, the width d of gap 4b is about 17 μm, and gap 4b is connected with gap 4a.That is, the gap 4a of lower floor overlaps with the gap 4b on upper strata.
The upper surface 2a-3 of the end 2a-1 of the clearance side of surface electrode 2a and two sides 2a-4,2a-5 (part namely except the end face 2a-6 of clearance side) are covered (particularly with reference to Fig. 3 (a)) by glass-film 21a.Equally, the upper surface 2b-3 of the end 2b-1 of the clearance side of surface electrode 2b and two sides 2b-4,2b-5 (part namely except the end face 2b-6 of clearance side) are covered (particularly with reference to Fig. 3 (b)) by glass-film 21b.
Electrostatic protection film 5 is formed at gap 4a, 4b, and described electrostatic protection film 5 is connected with surface electrode 2a, 2b.In addition, the part in the end 2a-1 of surface electrode 2a except the end face 2a-6 of clearance side is covered by glass-film 21a.Therefore, electrostatic protection film 5 only contacts with the end face 2a-6 of surface electrode 2a, and does not contact the part beyond described end face 2a-6.Equally, the part in the end 2b-1 of surface electrode 2b except the end face 2b-6 of clearance side is covered by glass-film 21b.Therefore, electrostatic protection film 5 only contacts with the end face 2b-6 of surface electrode 2b, and does not contact the part beyond described end face 2b-6.
Specifically, in T shape, electrostatic protection film 5 has central portion 5c and both sides 5a, 5b to the vertical section shape (with reference to Fig. 1) of electrostatic protection film 5.The central portion 5c of electrostatic protection film 5 is arranged at gap 4a, 4b (be namely filled in gap 4a, 4b and block gap 4a, 4b) as mentioned above, and both sides 5a, 5b of electrostatic protection film 5 coincide with upper surface 21a-2,21b-2 of end 21a-1,21b-1 of the clearance side of glass-film 21a, 21b (i.e. end 21a-1,21b-1 of the inner side of cover glass film 21a, 21b) respectively.
In order to reduce the insulation resistance after applying ESD voltage as far as possible, the gap 4a preferably only between surface electrode 2a, 2b arranges electrostatic protection film 5.Therefore, as shown in Fig. 1 etc., form glass-film 21a, 21b above surface electrode 2a, 2b after, utilize silk screen print method to form electrostatic protection film 5 from the top of glass-film 21a, 21b.Its result; for glass-film 21a, 21b; not only electrostatic protection film 5 (central portion 5c) is set at gap 4b; and both ends 5a, 5b of electrostatic protection film 5 overlap on the upper surface of glass-film 21a, 21b; and for surface electrode 2a, 2b; prevent both ends 5a, 5b of electrostatic protection film 5 from overlapping on upper surface 2a-3,2b-3 by glass-film 21a, 21b, so electrostatic protection film 5 (central portion 5c) only can be arranged in the 4a of gap.When being applied with the overvoltage that extraneous noise etc. causes, by between end face 2a-6,2b-6 of surface electrode 2a, 2b (the central portion 5c of electrostatic protection film 5) electric discharge, protect electronic equipment (electronic component).
By using electroconductive particle and these two kinds of mix particles of insulating properties particle to as the material in the silicones of adhesive, form electrostatic protection film 5.For electroconductive particle and insulating properties particle, do not carry out arranging on the surface of electroconductive particle passivation layer, to the special process of other materials of surface doping etc. of insulating properties particle.
In addition, electroconductive particle is aluminium (Al) powder as conductive metal particle, and insulating properties particle is zinc oxide (ZnO) powder.Oxide powder and zinc adopts the zinc oxide with the first insulating properties of JIS specification (JIS), and namely specific insulation is the zinc oxide of 200M more than Ω cm.And the mix proportion of these three kinds of compositions of silicones, aluminium powder and zinc oxide is: relative to described silicones 100 weight portion, described aluminium powder is 160 weight portions, and described oxide powder and zinc is 120 weight portions.The mix proportion of described electrostatic protection slurry meets following desired value: ESD suppresses leakage current 10 below the μ A (insulation resistance more than R=3M Ω) that crest voltage is below 500V, ESD tolerance is rated value.In addition, the voltage produced when ESD suppresses crest voltage to be electric discharge beginning.
Upper electrode 6a, the 6b as thick film is formed respectively above surface electrode 2a, 2b.Because surface electrode 2a, 2b are also thick films, so utilize upper electrode 6a, 6b to improve the ampacity of surface electrode 2a, 2b.But, form upper electrode 6a, 6b in the mode (on the position leaving electrostatic protection film 5) not contacting electrostatic protection film 5.Its reason is; if upper electrode 6a, 6b contact electrostatic protection film 5; when then the overvoltage that extraneous noise etc. causes being applied to electrostatic protection element 100; not likely between surface electrode 2a, 2b but between upper electrode 6a, 6b and upper electrode 6a, 6b and start between surface electrode 2a, 2b to discharge, now can not play electrostatic protection element electrostatic protection function originally.In addition, glass-film 21a, the 21b as dielectric film is not formed in the lower floor of upper electrode 6a, 6b.
Electrostatic protection film 5 is covered by intermediate layer 7, and the protected film 8 in intermediate layer 7 covers.Both ends 8a, 8b of diaphragm 8 overlap in a part (part of clearance side) of upper electrode 6a, 6b respectively.Further, glass-film 21a, 21b do not exist only between both sides 5a, 5b of electrostatic protection film 5 and surface electrode 2a, 2b, are also present in intermediate layer 7 and between surface electrode 2a, 2b.
The moisture-proofs of diaphragm 8 etc. are good, for the protection of electrostatic protection film 5 grade not by the impact of the external environment conditions such as humidity etc., because diaphragm 8 thermal endurance is not enough, so the electrostatic protection film 5 generated heat when directly not covering electric discharge with diaphragm 8, but cover electrostatic protection film 5 with the intermediate layer 7 that thermal endurance is good, then cover described intermediate layer 7 with diaphragm 8.
Intermediate layer 7 also has the function avoiding producing paradoxical discharge between surface electrode 2a, 2b.In addition; intermediate layer 7 be in the resin materials such as silicones appropriate add the inorganic additives such as silicon dioxide there is flexible material (elastomer); also there is following functions (pooling feature): suppress gap 4a (the electrostatic protection film 5) place between surface electrode 2a, 2b that the rising (absorbing described internal energy) of the internal energy (interior pressure) when discharging occurs, thus the impact preventing the rising because of described internal energy from producing makes electrostatic protection element 100 damaged.
The both ends of the surface 1c, 1d of ceramic substrate 1 are formed with end electrode 9a, 9b respectively, utilize these end electrodes 9a, 9b surface electrode 2a, 2b to be electrically connected respectively with backplate 3a, 3b.In addition, end 9a-1,9a-2,9b-1,9b-2 of end electrode 9a, 9b are overlapping with end 3a-1,3b-1 of end 2a-2,2b-2 of surface electrode 2a, 2b and backplate 3a, 3b respectively, so the connection of end electrode 9a, 9b and surface electrode 2a, 2b and backplate 3a, 3b is more reliable.
Further, for end electrode 9a, 9b etc., in order to improve the reliability as terminal electrode, nickel plating (Ni) film 10a, 10b and zinc-plated (Sn) film 11a, 11b is formed with successively.Plated nickel film 10a, 10b cover end electrode 9a, 9b, backplate 3a, 3b, a part of surface electrode 2a, 2b and a part of upper electrode 6a, 6b respectively, and tin-plated coating film 11a, 11b cover plated nickel film 10a, 10b respectively.
Then, the manufacture method of the electrostatic protection element 100 of the present embodiment is described based on Fig. 5 ~ Fig. 8.Reference numeral S1 ~ S20 is given to each manufacturing process (step) of the flow chart of Fig. 5.In addition, in (a) ~ (d) of (a) ~ (d) of Fig. 6, (a) ~ (d) of Fig. 7 and Fig. 8, the manufacture state of the electrostatic protection element 100 in each manufacturing process is illustrated successively.In addition, the electrostatic protection element 100 (width W shown in Fig. 2 is 0.8mm, length L is 1.6mm) of 1608 types has been manufactured in the present embodiment.
In initial operation (step S1), as shown in Fig. 6 (a), in manufacturing process's (omitting diagram) of electrostatic protection element 100, receive ceramic substrate 1.At this, use aluminum oxide substrate as ceramic substrate 1.By the aluminium oxide of 96% is used as ceramic material, manufacture described aluminum oxide substrate.
In addition; Fig. 6 (a) illustrate only the ceramic substrate 1 in a monolithic region corresponding with a slice electrostatic protection element 100; but the ceramic substrate 1 of the reality before once splitting in step s 16 is formed with many gaps and secondary gap in length and breadth, and is connected with multiple monolithic region in length and breadth and becomes flake.
In subsequent processing (step S2), as shown in Fig. 6 (b), the surperficial 1a of ceramic substrate 1 forms surface electrode film 2 (forming the film of surface electrode 2a, 2b in for the operation below).By being coated with copper-nickel slurry or copper-nickel-silver paste by silk screen print method and patterning on substrate surface 1a, form surface electrode film 2.Copper-nickel slurry is by copper powder, nickel powder, carrier (vehicle), glass dust and solvent is mixing is formed, and copper-nickel-silver paste is formed by copper powder, nickel powder, silver powder, carrier, glass dust and solvent are mixing.
Time such as by the material of aforesaid surface electrode materials A (with reference to Fig. 4) as surface electrode 2a, 2b, adopt Cu to be 62.5wt%, Ni to be the copper-nickel slurry of the Cu-Ni mix proportion of 37.5wt%.Specifically, adopt the copper-nickel slurry of the carrier of the nickel powder of the copper powder of 62.5wt%, 37.5wt%, organic material, solvent, the mixing formation of glass dust.During by the material of aforesaid surface electrode material B (with reference to Fig. 4) as surface electrode 2a, 2b, to adopt Cu to be 68.2wt%, Ni be 29.8wt%, Ag is the copper-nickel-silver paste of the Cu-Ni-Ag mix proportion of 2wt%.Specifically, adopt the copper-nickel-silver paste of mixing to the carrier of the silver powder of the nickel powder of the copper powder of 68.2wt%, 29.8wt%, 2wt%, organic material, solvent and glass dust formation.
In addition, as the copper-nickel slurry of the materials'use of surface electrode 2a, 2b and copper-nickel-silver paste all relative to metal powder 100 weight portion (namely, when copper-nickel slurry, the weight portion that copper powder and nickel powder add up to is 100 weight portions, when copper-nickel-silver paste, the weight portion that copper powder, nickel powder, silver powder add up to is 100 weight portions), adopt the mix proportion of carrier 0.35 ~ 0.5 weight portion, glass dust 3.5 ~ 15 weight portion.Optimum value is carrier 0.4 weight portion, glass dust 7 weight portion.
Surface electrode film 2 (film of copper-nickel slurry or the film of copper-nickel-silver paste) after silk screen printing is dry, thus make the solvent in copper-nickel slurry or the evaporation of the solvent in copper-nickel-silver paste.
In subsequent processing (step S3), by the surface electrode film 2 (film of copper-nickel slurry or the film of copper-nickel-silver paste) that formed in step S2 at nitrogen (N
2) atmosphere sintering furnace at peak temperature 900 DEG C sinter 1 hour.In addition, as the sintering temperature of surface electrode film 2 (film of copper-nickel slurry or the film of copper-nickel-silver paste) now, being not limited to peak temperature is 900 DEG C, as long as peak temperature is the scope of 800 DEG C ~ 950 DEG C.
When sintered surface electrode film 2 (film of copper-nickel slurry or the film of copper-nickel-silver paste), the carrier in the carrier in copper-nickel slurry or copper-nickel-silver paste burnouts, and the glass dust in copper-nickel slurry or the glass powder in copper-nickel-silver paste.Also containing a little oxygen (O in the nitrogen atmosphere of sintering furnace
2), utilize described oxygen to be burnouted by the carrier in the carrier in copper-nickel slurry or copper-nickel-silver paste.In other words, in above-mentioned copper-nickel slurry or copper-nickel-silver paste, the carrier that also can burnout under adopting hypoxemia atmosphere.Described carrier is well-known.Surface electrode film 2 (copper-nickel film or copper-nickel-silverskin) after sintering is when drying as above, because when the solvent in the solvent in copper-nickel slurry or copper-nickel-silver paste evaporates and sinters, carrier burnouts, so become the composite membrane (when surface electrode materials A) of copper, nickel, glass, or become the composite membrane (when surface electrode material B) of copper, nickel, silver, glass.In addition, the optimum value of the thickness of the surface electrode film 2 (copper-nickel film or copper-nickel-silverskin) after sintering as previously mentioned, is 17 ± 2 μm.
Now, under lower than the peak temperature of 800 DEG C when sintered surface electrode film 2 (film of copper-nickel slurry or the film of copper-nickel-silver paste), become perforated membrane because the glass powder in the glass dust in copper-nickel slurry or copper-nickel-silver paste melts completely, the film-strength of the surface electrode film after sintering 2 (copper-nickel film or copper-nickel-silverskin) can be made to reduce.
On the other hand, under higher than the peak temperature of 950 DEG C when sintered surface electrode film 2 (film of copper-nickel slurry or the film of copper-nickel-silver paste), glass expansion in glass in copper after fusing-nickel slurry or copper-nickel-silver paste, can make printed patterns produce stain, so sintering after surface electrode film 2 (copper-nickel film or copper-nickel-silverskin) thickness can than regulation thickness thin.
Therefore, suitable peak temperature time sintered surface electrode film 2 (film of copper-nickel slurry or the film of copper-nickel-silver paste) is described above, is the scope of 800 DEG C ~ 950 DEG C.
In subsequent processing (step S4), as shown in Fig. 6 (c), the back side 1b of ceramic substrate 1 forms backplate 3a, 3b.By by silk screen print method at substrate back 1b coating electrode slurry and patterning, form backplate 3a, 3b.At this, silver (Ag) slurry is used as electrode slurry.Make the backplate 3a after silk screen printing, 3b (film of electrode slurry) dry, and the solvent in electrode slurry is evaporated.In addition, also silver-colored palladium (AgPd) slurry can be used as the electrode slurry forming backplate 3a, 3b.
In subsequent processing (step S5), as shown in Fig. 6 (d), form glass-film 21 (forming the film of glass-film 21a, 21b in for the operation below) at the central portion of surface electrode film 2.By by silk screen print method on surface electrode film 2 (mode using the central portion of covering surfaces electrode film 2) coating as the borosilicic acid system glass paste of dielectric film slurry and patterning, form glass-film 21.
In subsequent processing (step S6), by backplate 3a, the 3b (film of electrode slurry) that are formed in step 4, in the sintering furnace of air (air) atmosphere, at peak temperature 600 DEG C, sinter 30 minutes with the glass-film 21 (film as the borosilicic acid system glass paste of dielectric film slurry) formed in step S5 simultaneously.Now, the outward appearance of surface electrode film 2 does not have marked change.Therefore, confirm backplate 3a, 3b and glass-film 21 to be sintered under air atmosphere.
In addition, the material of surface electrode film 2 (i.e. surface electrode 2a, 2b) be copper-nickel film or copper-nickel-silverskin time, the confirmation result of suitable Cu-Ni mix proportion or the scope of Cu-Ni-Ag mix proportion is as follows.
The material of surface electrode film 2 is set to the containing ratio < 100% of 70% < copper, all the other are when being the copper-nickel film of the containing ratio of nickel, when sintering backplate 3a, 3b and glass-film 21 under air atmosphere, surface electrode film 2 (copper-nickel film) is significantly oxidized, and outward appearance occurs abnormal and the impact of oxide-film makes conductor resistance rise to is difficult to the degree measured.In addition, the material of surface electrode film 2 is set to the containing ratio < 50% of 0% < copper, all the other are when being the copper-nickel film of the containing ratio of nickel, the film-strength of surface electrode film 2 (copper-nickel film) reduces, and can produce the problem that surface electrode film 2 (copper-nickel film) is peeled off in manufacture.To this, the material of surface electrode film 2 is set to containing ratio≤70% of 50%≤copper, containing ratio≤50% of 30%≤nickel copper-nickel film when, even if sinter backplate 3a, 3b and glass-film 21 under air atmosphere, the outward appearance etc. of surface electrode film 2 (copper-nickel film) does not have marked change yet.Therefore, when the material of surface electrode film 2 is copper-nickel film, the mix proportion scope of suitable Cu-Ni is containing ratio≤70% of 50%≤copper, containing ratio≤50% of 30%≤nickel.
In addition, the material of surface electrode film 2 is set to the containing ratio < 98% of 69% < copper, silver containing ratio 2%, all the other are when being the copper-nickel-silverskin of the containing ratio of nickel, when sintering backplate 3a, 3b and glass-film 21 under air atmosphere, surface electrode film 2 (copper-nickel-silverskin) is significantly oxidized, and outward appearance occurs abnormal and the impact of oxide-film makes conductor resistance rise to is difficult to the degree measured.In addition, the material of surface electrode film 2 is set to the containing ratio < 49% of 0% < copper, silver containing ratio 2%, all the other are when being the copper-nickel-silverskin of the containing ratio of nickel, the film-strength of surface electrode film 20 (copper-nickel-silverskin) reduces, and can produce the problem that surface electrode film 2 (copper-nickel-silverskin) is peeled off in manufacture.To this, the material of surface electrode film 2 is set to containing ratio≤69% of 49%≤copper, containing ratio≤49% of 29%≤nickel, silver the copper-nickel-silverskin of containing ratio 2% when, even if sinter backplate 3a, 3b and glass-film 21 under air atmosphere, the outward appearance etc. of surface electrode film 2 (copper-nickel-silverskin) does not have marked change yet.Therefore, when the material of surface electrode film 2 is copper-nickel-silverskin, the mix proportion scope of suitable Cu-Ni-Ag is containing ratio≤69% of 49%≤copper, containing ratio≤49% of 29%≤nickel, the containing ratio 2% of silver.
In addition, the containing ratio of above-mentioned each metal is weight percentage (wt%), is discrete median.
In addition, the sintering of described backplate 3a, 3b and glass-film 21 is not limited to air atmosphere, also can sinter under nitrogen atmosphere.
In addition, here backplate 3a, 3b and surface electrode film 2 are sintered separately, but be not limited thereto, when forming backplate 3a, 3b by copper-nickel slurry or copper-nickel-silver paste in the same manner as surface electrode film 2, also can sinter backplate 3a, 3b and surface electrode film 2 under nitrogen atmosphere simultaneously.
In subsequent processing (step S7), as shown in Fig. 7 (a), by using the laser method of the laser of fundamental wavelength (omitting diagram), cut-out processing is carried out to the central portion of the surface electrode film 2 sintered in the central portion of the glass-film 21 sintered in step S6 and step S3 simultaneously, thus forms the gap 4b on (coincidence) upper strata and the gap 4a of lower floor that row are connected simultaneously.Here adopt the YAG laser of fundamental wavelength (wavelength: 1064nm) to carry out and cut off processing.The width d of gap 4a, 4b is set to 17 μm.By forming gap 4a, 4b, become a pair surface electrode 2a, 2b across the opposed structure of gap 4a, and become a pair glass-film 21a, 21b across the opposed structure of gap 4b.
In subsequent processing (step S8), as shown in Fig. 7 (b), by with silk screen print method applying conductive slurry patterning on surface electrode 2a, 2b respectively, above surface electrode 2a, 2b, form upper electrode 6a, 6b respectively.The number of times of silk screen printing is now 1 time.In order to make upper electrode 6a, 6b not contact with electrostatic protection film 5, upper electrode 6a, 6b is made to leave the location overlap of electrostatic protection film 5 on surface electrode 2a, 2b.By upper electrode 6a, the 6b (film of conductive paste) after silk screen printing is dry, the solvent in conductive paste is evaporated.
The mesh size of the silk screen adopted in described silk screen printing is 400, emulsion thickness is 8 ± 2 μm (production code members: st400).In addition, adopt silver powder and the mixing material of epoxy resin as conductive paste.In addition, be not limited thereto, also can by the thick membrane electrode slurry etc. after mixing with epoxy resin to nickel (Ni) powder, copper (Cu) powder etc., as the conductive paste of upper electrode.
In subsequent processing (step S9), as shown in Fig. 7 (c), by being coated with electrostatic protection slurry and patterning by silk screen print method in gap 4a, 4b part, form electrostatic protection film 5.Now, electrostatic protection film 5 becomes the shape with central portion 5c and both sides 5a, 5b.For surface electrode 2a, 2b; the central portion 5c of electrostatic protection film 5 is only arranged at gap 4a (be filled in gap 4a and block gap 4a); and be connected with surface electrode 2a, 2b; and for glass-film 21a, 21b; the central portion 5c of electrostatic protection film 5 is arranged at gap 4b (be filled in gap 4b and block gap 4b), and both ends 5a, 5b of electrostatic protection film 5 are overlapping with a part (end of clearance side) of upper surface 21a-2,21b-2 of glass-film 21a, 21b.
Electrostatic protection film 5 (film of electrostatic protection slurry) after silk screen printing at the temperature of 100 DEG C dry 10 minutes, evaporates to make the solvent in electrostatic protection slurry.
In addition, the silk screen adopted in the silk screen printing of described electrostatic protection slurry is calendering net, and mesh size is 400, and wire diameter is 18 μm, and emulsion thickness is 5 ± 2 μm (production code members: cal400/18).In addition, the electrostatic protection slurry adopted here is with the adhesive of silicones for stock, and mixing in described silicones have the aluminium powder as electroconductive particle and the oxide powder and zinc as insulating properties particle.Further, the mix proportion of above-mentioned three kinds of compositions is: relative to silicones 100 weight portion, and aluminium powder is 160 weight portions, and oxide powder and zinc is 120 weight portions.Now, meet following desired value, namely ESD suppresses crest voltage to be that below 500V, ESD tolerance are at leakage current 10 below the μ A (insulation resistance more than R=3M Ω) of rated value.
In addition, silicones have employed specific insulation is 2 × 10
15Ω cm, dielectric constant are the addition reaction type silicones of 2.7.Aluminium powder employ aluminium is melted, high-pressure fog the average grain diameter of cooling curing are the aluminium powder of 3.0 ~ 3.6 μm.Oxide powder and zinc employs the zinc oxide of the first insulating properties (specific insulation is 200M more than Ω cm) with JIS specification.In addition, the particle diameter of described oxide powder and zinc is 0.6 μm with 0.3 ~ 1.5 μm of distribution, average grain diameter, and the particle diameter of an aggegation is 1.5 μm.
In subsequent processing (step S10), the electrostatic protection film 5 formed in upper electrode 6a, 6b of being formed in step S8 and step S9 is sintered 30 minutes at the temperature of 200 DEG C simultaneously.
In subsequent processing (step S11), as shown in Fig. 7 (d), by with silk screen print method silicone-coating slurry patterning on electrostatic protection film 5 and glass-film 21a, 21b, form the intermediate layer 7 covering electrostatic protection film 5 grade.The number of times of silk screen printing is now 1 time.At this, silicones slurry have employed the silicones slurry of silicon dioxide containing 40 ~ 50%.In addition, the silk screen used in described silk screen printing is calendering net, and mesh size is 400, and wire diameter is 18 μm, and emulsion thickness is 5 ± 2 μm (production code members: cal400/18).
In subsequent processing (step S12), the intermediate layer 7 formed in step S11 is sintered 30 minutes at the temperature of 150 DEG C.
In subsequent processing (step S13); as shown in Fig. 8 (a); by with silk screen print method epoxy resin coating slurry patterning on intermediate layer 7, glass-film 21a, 21b, surface electrode 2a, 2b and upper electrode 6a, 6b, form the diaphragm 8 covering intermediate layer 7 grade.The number of times of silk screen printing is now 3 ~ 4 times.The mesh size of the silk screen adopted in described silk screen printing is 250, emulsion thickness is 20 ± 2 μm (production code members: St250/30).
In subsequent processing (step S14), the diaphragm 8 formed in step S13 is sintered 30 minutes at the temperature of 200 DEG C.
In subsequent processing (step S15), the gap formed on laminar ceramic substrate 1, once splits ceramic substrate 1.Its result, ceramic substrate 1 becomes the belt base plate that multiple monolithic region is laterally linked to be row, and produces end face 1c, 1d.
In subsequent processing (step S16), as shown in Fig. 8 (b), utilize transfer printing, conductive paste is coated in a part of end face 1c, the 1d of ceramic substrate 1, a part of surface electrode 2a, 2b and backplate 3a, 3b, at the temperature of 200 DEG C, 30 minutes are sintered to it in subsequent processing (step S17), thus form end electrode 9a, 9b.Now, end electrode 9a, 9b and surface electrode 2a, 2b and backplate 3a, 3b partly overlap, thus are electrically connected with surface electrode 2a, 2b and backplate 3a, 3b.At this, conductive paste adopts silver powder and the mixing slurry of epoxy resin.
In subsequent processing (step S18), the secondary gap formed on the ceramic substrate 1 of band shape, carries out secondary splitting to ceramic substrate 1.Its result, ceramic substrate 1 is split into each monolithic region, becomes monolithic.
In subsequent processing (step S19), as shown in Fig. 8 (c), utilize barrel plating mode, a part of end electrode 9a, 9b, backplate 3a, 3b, surface electrode 2a, 2b and a part of upper electrode 6a, 6b are electroplated, form plated nickel film 10a, 10b.
In last operation (step S20), as shown in Fig. 8 (d), utilize barrel plating mode, plated nickel film 10a, 10b of being formed in step S19 electroplate, form tin-plated coating film 11a, 11b.Like this, electrostatic protection element 100 is completed.
Then, ESD test (contact discharge test) is described.By applying with " IEC61000 ?4 ?28kV " as the method for the ESD voltage of benchmark carries out ESD test to sample (electrostatic protection element).Material for surface electrode 2a, 2b is the electrostatic protection element 100 of the present embodiment of copper-nickel film or copper-nickel-silverskin, and the material of surface electrode is that the electrostatic protection element of the comparative example of tungsten film has carried out ESD test.In addition, about the electrostatic protection element 100 of the present embodiment, ESD test has been carried out to the two kinds of electrostatic protection elements 100 that have employed surface electrode materials A (copper-nickel film) and surface electrode material B (copper-nickel-silverskin).
The method of ESD test (contact discharge test) is below described, as shown in Figure 9, under the state that interrupteur SW disconnects, by from DC power supply (omit illustrate) by the direct voltage V of+8kV
0by the resistance R of 53M Ω
1be applied on the capacitor C of 150pF, capacitor C is charged.Subsequently, by Closing Switch SW, from the resistance R of capacitor C by 330 Ω
2, to the load resistance R with 50 Ω ± 1%
3each sample 200 (electrostatic protection element of the electrostatic protection element 100 namely adopting the present embodiment of the electrostatic protection element 100 of the present embodiment of surface electrode materials A, employing surface electrode material B and comparative example tungsten being used as surface electrode material) in parallel applies discharge voltage (ESD voltage).Further, measure the voltage V produced on each sample 200 after just having applied described ESD voltage, and judge whether that the ESD met as the maximum of described voltage V suppresses crest voltage in the regulation of below 500V.
In addition, apply the direct voltage of 30V to each sample 200 after applying ESD voltage, measure the electric current (being called leakage current) now flowing through described sample 200, and also judge whether to meet the regulation of described leakage current at 10 below μ A.
500 ESD tests have been carried out to each sample 200.The ESD that Figure 10 and Figure 11 illustrates in described 500 ESD test suppresses the measurement result of crest voltage and the measurement result of leakage current.In Figure 10 and Figure 11, ◇ is that sample 200 is when adopting electrostatic protection element 100 of surface electrode materials A (copper-nickel film), ESD suppresses the measurement result of crest voltage and the measurement result of leakage current, is that sample 200 is when adopting electrostatic protection element 100 of the present embodiment of surface electrode material B (copper-nickel-silverskin), ESD suppresses the measurement result of crest voltage and the measurement result of leakage current, △ be sample 200 adopt tungsten film as surface electrode material electrostatic protection element when, ESD suppresses the measurement result of crest voltage and the measurement result of leakage current.
As shown in Figure 10; adopt in the arbitrary measurement result (◇,) of the electrostatic protection element 100 of surface electrode materials A, B (copper-nickel film, copper-nickel-silverskin); all tolerating 500 ESD tests and meeting ESD suppresses crest voltage in the regulation of below 500V, obtains the result with measurement result (△) same degree of electrostatic protection element tungsten being used as surface electrode material.
In addition; as shown in figure 11; adopt in the arbitrary measurement result (◇,) of the electrostatic protection element 100 of surface electrode materials A, B (copper-nickel film, copper-nickel-silverskin); all tolerate 500 ESD tests and meet the regulation of leakage current at 10 below μ A, obtaining the result with measurement result (△) same degree of electrostatic protection element tungsten film being used as surface electrode material.
In addition, although three kinds of surface electrode materials all meet the regulation of leakage current at 10 below μ A, but when surface electrode material is tungsten film (△), the variation applying the leakage current that number of times produces because of ESD voltage is larger, to this, when surface electrode materials A, B (copper-nickel film, copper-nickel-silverskin) (◇,), the variation applying the leakage current that number of times produces because of ESD voltage is less, only applies at ESD voltage the variation that number of times can observe larger leakage current for 10 ~ 60 times.And, when surface electrode materials A (copper-nickel film) (◇), apply number of times 10 ~ 50 generation leakage currents at ESD voltage significantly to change, to this, when surface electrode material B (copper-nickel-silverskin) (), apply number of times 30 ~ 60 generation leakage currents at ESD voltage and significantly change.
That is, according to Figure 11 with the coordinate diagram of the surface electrode material leakage current that is parameter, compared to tungsten film, the variation that surface electrode materials A, B (copper-nickel film, copper-nickel-silverskin) apply because of ESD voltage the leakage current that number of times produces is very little.In addition, number of times is applied according to the initial ESD voltage producing the peak value (significantly changing) of leakage current, surface electrode materials A (copper-nickel film) is compared with surface electrode material B (copper-nickel-silverskin), and surface electrode material B (copper-nickel-silverskin) produces the situation specific surface electrode material A (copper-nickel film) how about 20 times of the peak value of leakage current when applying ESD voltage.
Can judge from above-mentioned, compared to tungsten film, surface electrode materials A, B (copper-nickel film, copper-nickel-silverskin) are high for the endurance of the insulating properties applying ESD voltage.In addition can also judge, surface electrode material B (copper-nickel-silverskin) specific surface electrode material A (copper-nickel film) is high for the endurance of the insulating properties applying ESD voltage.Therefore, effect of the present invention, effect can also be found from above-mentioned viewpoint.
Figure 12 ~ Figure 16 illustrates other structure example of the electrostatic protection element of the embodiment of the present invention.The structure of electrostatic protection element 300,400 shown in described Figure 12 ~ Figure 16, compared with the structure of the electrostatic protection element 100 shown in Fig. 1 ~ Fig. 3, exists different in the configuration aspects of glass-film 21a, 21b.In addition, about the material of surface electrode 2a, 2b of electrostatic protection element 300,400, use copper-nickel film or copper-nickel-silverskin equally with surface electrode 2a, 2b of electrostatic protection element 100.
Compared to the electrostatic protection element 100 (particularly with reference to Fig. 2, Fig. 3) shown in Fig. 1 ~ Fig. 3; in the electrostatic protection element 300 shown in Figure 12 ~ Figure 14, the width of glass-film 21a, 21b broadens (being particularly the Width of glass-film 21a, 21b with reference to the above-below direction of Figure 12, Figure 13: Figure 12).
Specifically; as shown in Figures 2 and 3; although the width of glass-film 21a, 21b specific surface electrode 2a, 2b of electrostatic protection element 100 is wide; but it is narrower than the width of electrostatic protection film 5; glass-film 21a, 21b have two sides 2a-4,2a-5 of energy covering surfaces electrode 2a and two sides 2b-4,2b-5 of surface electrode 2b, prevent the width of the irreducible minimum of described side 2a-4,2a-5,2b-4,2b-5 contact electrostatic protection film 5.To this, as shown in Figure 13 and Figure 14, the width in the width of glass-film 21a, 21b specific surface electrode 2a, 2b of electrostatic protection element 300, the width of electrostatic protection film 5 and intermediate layer 7 is all wide.Other structures of electrostatic protection element 300 are identical with the structure of electrostatic protection element 100.In addition, the manufacture method of electrostatic protection element 300 is also identical with the manufacture method (with reference to Fig. 5 ~ Fig. 8) of electrostatic protection element 100.
About the K-K line direction of arrow section of Figure 15 and the structure of L-L line direction of arrow section, due to identical with the section structure shown in Fig. 3 (b) with the section structure shown in Fig. 3 (a), so with reference to Fig. 3.As shown in Fig. 3, Figure 15 and Figure 16; compared to the electrostatic protection element 100 (particularly with reference to Fig. 1, Fig. 2) shown in Fig. 1 ~ Fig. 3, the length of glass-film 21a, 21b of electrostatic protection element 400 shortens (particularly with reference to Figure 14, Figure 15: the left and right directions of these figure is the length direction of glass-film 21a, 21b).
Specifically, as depicted in figs. 1 and 2, electrostatic protection element 100 glass-film 21a, 21b than the length of electrostatic protection film 5 and the length in intermediate layer 7 all long.To this; as shown in Figure 15 and Figure 16; although glass-film 21a, 21b of electrostatic protection element 400 are longer than the length of electrostatic protection film 5; but it is shorter than the length in intermediate layer 7; glass-film 21a, 21b have and between both sides 5a, 5b of electrostatic protection film 5 and between surface electrode 2a, 2b (i.e. upper surface 2a-3,2b-3 of end 2a-1,2b-1 of covering surfaces electrode 2a, 2b), can prevent the length of the irreducible minimum of both sides 5a, 5b contact surface electrode 2a, 2b of electrostatic protection film 5.Other structures of electrostatic protection element 400 are identical with the structure of electrostatic protection element 100.In addition, the manufacture method of electrostatic protection element 400 is also identical with the manufacture method (with reference to Fig. 5 ~ Fig. 8) of electrostatic protection element 100.
As mentioned above, the electrostatic protection element 100,300,400 of the present embodiment comprises: surface electrode 2a, 2b, is formed at the surperficial 1a of ceramic substrate (insulated substrate) 1, and opposed across the first gap 4a; Glass-film (dielectric film) 21a, 21b, be formed in upper surface 2a-3,2b-3 and two sides 2a-4,2b-4 of surface electrode 2a, 2b upper also covering surfaces electrode 2a, 2b, and across opposed with the second gap 4b that the first gap 4a is connected; And electrostatic protection film 5; there is central portion 5c and both sides 5a, 5b; central portion 5c is arranged at the first gap 4a and the second gap 4b; both sides 5a, 5b are overlapped in upper surface 21a-2,21b-2 of glass-film (dielectric film) 21a, 21b; wherein, the material of surface electrode 2a, 2b is copper-nickel film or copper-nickel-silverskin.
In addition, the electrostatic protection element 100,300,400 of the present embodiment has backplate 3a, 3b, and described backplate 3a, 3b are formed at the back side 1b of ceramic substrate (insulated substrate) 1, and are electrically connected with surface electrode 2a, 2b.
In addition, the manufacture method of the electrostatic protection element 100,300,400 of the present embodiment comprises: the first operation, silk screen printing copper-nickel slurry or copper-nickel-silver paste on the surperficial 1a of ceramic substrate (insulated substrate) 1, and the film of the film of the copper of described silk screen printing-nickel slurry or copper-nickel-silver paste is sintered in nitrogen atmosphere under the peak temperature of 800 DEG C ~ 950 DEG C (such as 900 DEG C) scopes, form surface electrode film 2; Second operation, with the mode silk-screened glasses slurry (dielectric film slurry) of the upper surface and two sides that cover the surface electrode film 2 sintered in described first operation, and sinter the film of the glass paste (dielectric film slurry) of described silk screen printing, form glass-film (dielectric film) 21; 3rd operation, cuts off the glass-film (dielectric film) 21 formed in the surface electrode film 2 formed in described first operation and described second operation, forms the first gap 4a and the second gap 4b; And the 4th operation; silk screen printing electrostatic protection slurry; and the film sintering the electrostatic protection slurry of described silk screen printing is to form electrostatic protection film 5; make described electrostatic protection film 5 for having the shape of central portion 5c and both sides 5a, 5b; central portion 5c is arranged at the first gap 4a and the second gap 4b, and both sides 5a, 5b is overlapped in upper surface 21a-2,21b-2 of glass-film (dielectric film) 21a, 21b.
Or, the manufacture method of the electrostatic protection element 100,300,400 of the present embodiment comprises: the first operation, silk screen printing copper-nickel slurry or copper-nickel-silver paste on the surperficial 1a of ceramic substrate (insulated substrate) 1, and the film of the film of the copper of described silk screen printing-nickel slurry or copper-nickel-silver paste is sintered in nitrogen atmosphere under the peak temperature of 800 DEG C ~ 950 DEG C (such as 900 DEG C) scopes, form surface electrode film 2; Second operation, screen printing electrode slurry on the back side 1b of ceramic substrate (insulated substrate) 1, and sinter the film of the electrode slurry of described silk screen printing, form backplate 3a, 3b; 3rd operation, with the mode silk-screened glasses slurry (dielectric film slurry) of the upper surface and two sides that cover the surface electrode film 2 sintered in described first operation, and sinter the film of the glass paste (dielectric film slurry) of described silk screen printing, form glass-film (dielectric film) 21; 4th operation, cuts off the glass-film (dielectric film) 21 formed in the surface electrode film 2 formed in described first operation and described 3rd operation, forms the first gap 4a and the second gap 4b; And the 5th operation; silk screen printing electrostatic protection slurry; and the film sintering the electrostatic protection slurry of described silk screen printing is to form electrostatic protection film 5; make electrostatic protection film 5 for having the shape of central portion 5c and both sides 5a, 5b; central portion 5c is arranged at the first gap 4a and the second gap 4b, and both sides 5a, 5b is overlapped in upper surface 21a-2,21b-2 of glass-film (dielectric film) 21a, 21b.
In addition, now, after described first operation, implement described second operation, and in described second operation, under the peak temperature that the peak temperature under air atmosphere and in than described first operation during sintered surface electrode film 2 is low, sinter backplate 3a, 3b.
Therefore; according to electrostatic protection element 100,300,400 and the manufacture method thereof of the present embodiment; owing to making the material of surface electrode 2a, 2b be copper-nickel film or copper-nickel-silverskin, so ESD test (contact discharge test) of more than 500 times can be tolerated and suppress crest voltage to maintain below 500V ESD.In addition, owing to can pass through to be sintered under the peak temperature (such as peak temperature 900 DEG C) of 800 DEG C ~ 950 DEG C of scopes in nitrogen atmosphere by the film of the film of copper-nickel slurry or copper-nickel-silver paste, form copper-nickel film or the copper-nickel-silverskin of surface electrode material, so do not need the sintering furnace of high temperature, and need not strict control damp.Therefore, manufacturing equipment is cheap, even and if carelessness manufacturing management also can not cause personal injury, so do not need strict manufacturing management, thus copper-nickel film or copper-nickel-silverskin can be formed with low cost.Therefore, the manufacturing cost of electrostatic protection element 100,300,400 can be reduced.
In addition, although these three kinds of films of copper-nickel film, copper-nickel-silverskin and tungsten film can tolerate 500 ESD and test and meet the regulation of leakage current at 10 below μ A, but compared to tungsten film, when copper-nickel film and copper-nickel-silverskin, the variation applying the leakage current that number of times produces because of ESD voltage is very little, and high for the endurance of the insulating properties applying ESD voltage.And compared to copper-nickel film, when copper-nickel-silverskin, the initial ESD voltage producing the peak value (significantly changing) of leakage current applies often, and the endurance for the insulating properties applying ESD voltage is high.
In addition, owing to implementing the second operation after the first operation, and in the second operation, backplate 3a, 3b is sintered, so backplate 3a, 3b can be prevented rotten under the peak temperature (600 DEG C) that peak temperature (such as 900 DEG C) under air atmosphere and in than the first operation during sintered surface electrode film 2 is low.Namely, suppose to implement the first operation after the second operation, then in the first operation below with high peak temperature (such as 900 DEG C) sintered surface electrode film 2 time, backplate 3a, 3b are also again sintered under high peak temperature, so there is the rotten danger of backplate 3a, 3b.To this, if implement described second operation after the first operation, then there is not the risk that backplate 3a, 3b are rotten.
In addition, when implementing described second operation after the first operation, material due to the surface electrode film 2 (surface electrode 2a, 2b) sintered in the first operation is above copper-nickel film or copper-nickel-silverskin, even if so sinter backplate 3a, 3b in the second operation below under air atmosphere, now also can not there is marked change in the outward appearance of surface electrode film 2 (surface electrode 2a, 2b).Therefore, backplate 3a, 3b can be sintered under air atmosphere, easily form backplate 3a, 3b.
In addition; be explained above the embodiment of the electrostatic protection element forming an electrostatic protection film 5 on a ceramic substrate 1; but be not limited thereto, the electrostatic protection element that a ceramic substrate 1 is formed plural electrostatic protection film 5 is also contained in scope of the present invention.
In addition; be explained above adopt be mixed with silicones, aluminium powder, these three kinds of compositions of oxide powder and zinc slurry to form the situation of electrostatic protection film; but be not limited thereto, the structure of electrostatic protection element of the present invention also can be applied to and adopt with the material of above-mentioned heterogeneity to form the electrostatic protection element of electrostatic protection film.
Industrial applicibility
The present invention relates to electrostatic protection element and manufacture method thereof; effectively can be applied to the situation forming surface electrode with low cost, described surface electrode can make electrostatic protection element tolerate ESD test (contact discharge test) of more than 500 times and suppress crest voltage to maintain below 500V ESD.
Claims (5)
1. a manufacture method for electrostatic protection element, described electrostatic protection element comprises:
Surface electrode, is formed at the surface of insulated substrate, and opposed across the first gap;
Dielectric film, to be formed on described surface electrode and to cover upper surface and the two sides of described surface electrode, and across opposed with the second gap that described first gap is connected; And
Electrostatic protection film, has central portion and both sides, and described central portion is arranged at described first gap and the second gap, and described both sides are overlapped in the upper surface of described dielectric film,
The material of described surface electrode is copper-nickel film or copper-nickel-silverskin,
The feature of the manufacture method of described electrostatic protection element is to comprise:
First operation, at surface screen-printed copper-nickel slurry or the copper-nickel-silver paste of described insulated substrate, and the film of the film of the copper of described silk screen printing-nickel slurry or copper-nickel-silver paste is sintered in nitrogen atmosphere under the peak temperature of 800 DEG C ~ 950 DEG C of scopes, form surface electrode film;
Second operation, with the mode silk screen printing dielectric film slurry of the upper surface and two sides that cover in described first operation the described surface electrode film formed, and sinters the film of the dielectric film slurry of described silk screen printing, forms dielectric film;
3rd operation, cuts off the described dielectric film formed in the described surface electrode film formed in described first operation and described second operation, forms described first gap and described second gap; And
4th operation; silk screen printing electrostatic protection slurry; and the film of the electrostatic protection slurry of described silk screen printing is sintered; form described electrostatic protection film; described electrostatic protection film is made to be the shape with described central portion and described both sides; described central portion is arranged at described first gap and described second gap, and described both sides is overlapped in the upper surface of described dielectric film.
2. the manufacture method of electrostatic protection element according to claim 1, is characterized in that, peak temperature when sintering described surface electrode film in described first operation is 900 DEG C.
3. a manufacture method for electrostatic protection element, described electrostatic protection element comprises:
Surface electrode, is formed at the surface of insulated substrate, and opposed across the first gap;
Backplate, is formed in the back side of described insulated substrate, and is electrically connected with described surface electrode,
Dielectric film, to be formed on described surface electrode and to cover upper surface and the two sides of described surface electrode, and across opposed with the second gap that described first gap is connected; And
Electrostatic protection film, has central portion and both sides, and described central portion is arranged at described first gap and the second gap, and described both sides are overlapped in the upper surface of described dielectric film,
The material of described surface electrode is copper-nickel film or copper-nickel-silverskin,
The feature of the manufacture method of described electrostatic protection element is to comprise:
First operation, at surface screen-printed copper-nickel slurry or the copper-nickel-silver paste of described insulated substrate, and the film of the film of the copper of described silk screen printing-nickel slurry or copper-nickel-silver paste is sintered in nitrogen atmosphere under the peak temperature of 800 DEG C ~ 950 DEG C of scopes, form surface electrode film;
Second operation, at the back side screen printing electrode slurry of described insulated substrate, and sinters the film of the electrode slurry of described silk screen printing, forms described backplate;
3rd operation, with the mode silk screen printing dielectric film slurry of the upper surface and two sides that cover in described first operation the described surface electrode film formed, and sinters the film of the dielectric film slurry of described silk screen printing, forms dielectric film;
4th operation, cuts off the described dielectric film formed in the described surface electrode film formed in described first operation and described 3rd operation, forms described first gap and described second gap; And
5th operation; silk screen printing electrostatic protection slurry; and the film of the electrostatic protection slurry of described silk screen printing is sintered; form described electrostatic protection film; described electrostatic protection film is made to be the shape with described central portion and described both sides; described central portion is arranged at described first gap and described second gap, and described both sides is overlapped in the upper surface of described dielectric film.
4. the manufacture method of electrostatic protection element according to claim 3, is characterized in that,
Described second operation is implemented after described first operation,
And in described second operation, under the peak temperature that peak temperature when sintering described surface electrode film in than described first operation is low, sinter described backplate.
5. the manufacture method of the electrostatic protection element according to claim 3 or 4, is characterized in that, peak temperature when sintering described surface electrode film in described first operation is 900 DEG C.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011211934 | 2011-09-28 | ||
| JP2011-211934 | 2011-09-28 | ||
| PCT/JP2012/061018 WO2013046779A1 (en) | 2011-09-28 | 2012-04-25 | Electrostatic protective component and method for manufacturing same |
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| Publication Number | Publication Date |
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| CN103918144A CN103918144A (en) | 2014-07-09 |
| CN103918144B true CN103918144B (en) | 2016-03-02 |
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| JP (1) | JP5671149B2 (en) |
| KR (1) | KR101572769B1 (en) |
| CN (1) | CN103918144B (en) |
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| WO (1) | WO2013046779A1 (en) |
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| CN104600568B (en) * | 2015-02-12 | 2017-03-01 | 苏州晶讯科技股份有限公司 | A kind of ceramic electrostatic suppressor and preparation method thereof |
| KR101808794B1 (en) * | 2015-05-07 | 2018-01-18 | 주식회사 모다이노칩 | Laminated device |
| CN105336839A (en) * | 2015-11-16 | 2016-02-17 | 格力电器（合肥）有限公司 | Pad, light emitting diode and pad printing template |
| TWI616044B (en) * | 2016-08-02 | 2018-02-21 | 久尹股份有限公司 | Electrostatic discharge protection device and method of producing same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101536275A (en) * | 2006-10-31 | 2009-09-16 | 松下电器产业株式会社 | Anti-static part and its manufacturing method |
| CN101752790A (en) * | 2008-12-17 | 2010-06-23 | 乾坤科技股份有限公司 | Overvoltage protection element and manufacturing method thereof |
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| JP4295035B2 (en) * | 2003-08-06 | 2009-07-15 | 太陽社電気株式会社 | Manufacturing method of chip resistor |
| JP2005191206A (en) * | 2003-12-25 | 2005-07-14 | Matsushita Electric Ind Co Ltd | Resistor and manufacturing method thereof |
| TW200625591A (en) * | 2005-01-13 | 2006-07-16 | Jumbotek Advanced Technologies Inc | A structure of the monolithic chip electrostatic discharge protective device |
| JP2009267202A (en) * | 2008-04-28 | 2009-11-12 | Panasonic Corp | Static electricity countermeasure component |
| KR101415477B1 (en) * | 2009-11-26 | 2014-07-04 | 가마야 덴끼 가부시끼가이샤 | Paste for electrostatic protection, electrostatic protection component, and method for producing same |
| JP5378589B2 (en) * | 2010-02-25 | 2013-12-25 | 釜屋電機株式会社 | Static electricity protection component and method for manufacturing the same |
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- 2012-04-25 CN CN201280046961.5A patent/CN103918144B/en active Active
- 2012-04-25 WO PCT/JP2012/061018 patent/WO2013046779A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101536275A (en) * | 2006-10-31 | 2009-09-16 | 松下电器产业株式会社 | Anti-static part and its manufacturing method |
| CN101752790A (en) * | 2008-12-17 | 2010-06-23 | 乾坤科技股份有限公司 | Overvoltage protection element and manufacturing method thereof |
Also Published As
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| KR20140065429A (en) | 2014-05-29 |
| KR101572769B1 (en) | 2015-11-27 |
| JP5671149B2 (en) | 2015-02-18 |
| TW201314860A (en) | 2013-04-01 |
| TWI469307B (en) | 2015-01-11 |
| WO2013046779A1 (en) | 2013-04-04 |
| JPWO2013046779A1 (en) | 2015-03-26 |
| CN103918144A (en) | 2014-07-09 |
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