CN103911604A - Control device and control method for substrate deposition device - Google Patents
Control device and control method for substrate deposition device Download PDFInfo
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- CN103911604A CN103911604A CN201310744475.7A CN201310744475A CN103911604A CN 103911604 A CN103911604 A CN 103911604A CN 201310744475 A CN201310744475 A CN 201310744475A CN 103911604 A CN103911604 A CN 103911604A
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Abstract
The invention provides a control device for a substrate deposition device so as to realize the measurement and calibration of the general surface state of a substrate and the general driving state of a base based on the temperature sensed by a substrate temperature sensor. The control device for the substrate deposition device includes a temperature sensor, a wave extractor, a zone separator, and a calibrator, the temperature sensor senses the temperature of the substrate in a chamber and the temperature of the base for supporting the substrate, the wave extractor extracts the temperature sensed by the temperature sensor to be temperature waves varying along time, the zone separator separates the base zone corresponding to the temperature of the base from the substrate zone corresponding to the temperature of the substrate based on the temperature waves, and the calibrator calibrates the surface state of the substrate and the driving state of the base based on the temperature wave of the substrate zone and the temperature wave of the base zone. Accordingly, the control device for the substrate deposition device can reduce the manufacturing cost of the substrate deposition device, and simplifies the structure of the substrate deposition device.
Description
Technical field
The present invention relates to a kind of control device for substrate deposition device and control method thereof; Specifically say, relate to a kind of adopt substrate temperature measurement device, for control device and the control method thereof of substrate deposition device.
Background technology
Forming in the process of illuminated display element or like, need to carry out depositing treatment to films such as AlN, GaAs, GaN and InP.The deposition method that these films adopt is, chemical Vapor deposition process (CVD), molecular beam epitaxy (MBE), Metalorganic Chemical Vapor Deposition (MOCVD), etc.Carrying out when these deposition methods, substrate is installed in the chamber of vacuum state and then on substrate, supplies process gas, like this crystallizing layer is deposited on substrate surface.
In adopting these deposition methods to deposit, the substrate in chamber should remain in the condition of high temperature.So, on substrate deposition device, be provided with one for the well heater to base plate heating, be also provided with one for measuring the monitoring device of temperature of the substrate in chamber.The Heating temperature of well heater can be monitored thus device and be controlled.
What this substrate temperature monitoring device adopted is a kind of pyrometer, is used for monitoring because infrared rays hot and that produce from substrate surface.Pyrometer is arranged on the outside that is positioned at the window on chamber, measures temperature by detecting by the infrared rays of glass port, and infrared rays wherein produces from the surface of substrate, or the surface of the semiconducter device forming.
Supplement, the defect that cannot find of substrate surface (for example, surface is impaired, external substance adheres to, etc.); The bending that substrate heat is caused; While being positioned at the substrate rotation on pedestal, residing processing environment causes occurring base plate alignment mistake; Also wrong generation under pedestal driving condition, all these problems all may cause being formed at the Quality Down of the crystallizing layer on substrate, also can cause process efficiency to reduce.
So, need to observe the condition of surface of substrate and the driving condition of pedestal, and control as required substrate temperature and handle to do process management.
In traditional method, be to detect the condition of surface of substrate temperature, substrate and the driving condition of pedestal by equipment independently.But, for the pyrometer of sensing substrate temperature and very expensive for detection of the equipment price of the condition of surface of substrate and the driving condition of pedestal, thereby cause the manufacturing cost of substrate deposition device to increase.
Summary of the invention
[technical problem]
A target of the present invention is, a kind of control device for substrate deposition device is provided, and it is according to the temperature being sensed by substrate temperature sensor, realizes measurement and the mensuration of the overall driving condition of general surface state to substrate and pedestal; And the control method of described control device.
[technical scheme]
Can comprise according to the control device for substrate deposition device of the present invention: temperature sensor, is placed on the temperature of the substrate in chamber, and supports the temperature of the pedestal of described substrate for sensing; Waveform extracting device, for by by described temperature sensor senses to temperature be extracted as time dependent temperature waveform; Region disconnecting device, for according to described temperature waveform, separates corresponding the temperature of described pedestal base region and the corresponding substrate regions of temperature of described substrate; And tester, for according to the temperature waveform of the temperature waveform of described substrate regions and described base region, measure the condition of surface of described substrate and the driving condition of described pedestal.
Can comprise according to the control method for substrate deposition device of the present invention: technique initial step, on the pedestal in substrate is installed to chamber and being heated, initial deposition process on described substrate, then by the rotation of described pedestal, process gas is fed in described chamber; Temperature sensing step, the temperature by temperature sensor to described pedestal and the temperature of described substrate are carried out sensing, and described temperature sensor is positioned on described pedestal; Waveform extracting step, will be extracted as a time dependent temperature waveform by the temperature of described temperature sensor institute sensing; Region disconnecting step, according to described temperature waveform, separates the corresponding base region of temperature of described pedestal and the corresponding substrate regions of temperature of described substrate; And determination step, according to the temperature waveform of the temperature waveform of described substrate regions and described base region, measure the condition of surface of described substrate and the driving condition of described pedestal.
[beneficial effect]
Control device for substrate deposition device according to the present invention with and control method adopt pyrometer etc. to realize the sensing of substrate deposition device to substrate temperature and base-plate temp for the temperature sensor of sensing substrate temperature, and realize temperature based on the institute's sensing mensuration to substrate general surface state and the overall driving condition of pedestal, can cut down accordingly the manufacturing cost of substrate deposition device and simplify its structure.
Brief description of the drawings
Fig. 1 shows the figure of substrate deposition device according to an embodiment of the invention;
Fig. 2 shows the figure of the control device for substrate deposition device according to an embodiment of the invention;
Fig. 3 is according to an embodiment of the invention for the sequence chart of control method of substrate deposition device is described;
Fig. 4 is the figure in good substrate for instruction card surface state;
Fig. 5 shows the graphic representation of condition of surface when substrate temperature waveform when good;
Fig. 6 shows the graphic representation of temperature waveform in the time that substrate bends;
Fig. 7 is the figure of the situation that upwarps for substrate is described;
Fig. 8 is the figure of the situation that upwarps for substrate is described;
Fig. 9 shows the graphic representation of temperature waveform in the time that substrate upwarps;
Figure 10 is the figure of the damage situations for substrate surface is described;
Figure 11 shows the graphic representation of surface when substrate temperature waveform when impaired;
Figure 12 is the vertical view that schematically shows the driving condition of the pedestal that substrate is supported;
Figure 13 is for the figure of driving condition in good pedestal is described;
Figure 14 shows the graphic representation of driving condition when pedestal temperature waveform when good;
Figure 15 shows the figure of the swing situation of pedestal;
Figure 16 shows the graphic representation of temperature waveform in the time that pedestal occurs to swing.
Embodiment
Hereinafter, substrate deposition device according to an embodiment of the invention is described by reference to the accompanying drawings.
Fig. 1 shows the figure of substrate deposition device according to an embodiment of the invention.
Referring to Fig. 1, can comprise chamber 110, gas supply unit 120, pedestal 130 and temperature sensor 210 according to the substrate deposition device of this embodiment.
Space for depositing operation can be arranged on chamber 110.
Gas supply unit 120 can be positioned at chamber 110 tops.On gas supply unit 120, can be integrated with a lid, for the inside of chamber 110 is opened and closed.Gas supply unit 120 is for to chamber 110 injection technology gases.Gas supply unit 120 can be made into the form of shower head, comprises the first process gas passage 121, the second process gas passage 122, sweep gas passage 123 and cooling channel 124.
The first process gas passage 121 and the second process gas passage 122 can have the path of himself, to prevent that the first process gas is together with the second process gas mix.Sweep gas passage 123 can be formed at the edge of gas supply unit 120.Sweep gas enters the inwall of chamber 110 for preventing from being fed to the process gas of chamber 110, like this, just do not have particle deposition on the inwall of chamber 110.Cooling channel 124 can be positioned at the bottom of the first process gas passage 121 and the second process gas passage 122.So the first process gas and the second process gas just can be fed in chamber 110 by cooling channel 124.In the time having coolant flow through cooling channel 124, the lower surface of gas supply unit 120 just obtains cooling.Its objective is the reaction that prevents generating process gas in the lower surface of gas supply unit 120.
Pedestal 130 is positioned at below gas supply unit 120.On the upper face of pedestal 130, can there are multiple recesses (pocket) 131.In each recess 131, substrate 10 can be installed.The making material of substrate 10 can be, gan, sapphire etc., and these materials have all been accepted epitaxy technique.A turning axle can be installed in pedestal 130 belows.Motor can be connected to the bottom of the turning axle of pedestal 130, and it reaches the outside of chamber 110.So pedestal 130 just can be by motor and turning axle rotation in technological process.
Well heater 133 for pedestal 130 is heated can be installed in pedestal 130, to adjust the temperature of substrate 10.Multiple well heaters 133 can be installed and realize the temperature control to pedestal 130 different zones.Each well heater 133 can be heated to 600 DEG C to 1300 DEG C by the substrate 10 being arranged on pedestal 130.Well heater 133 can adopt tungsten heater or RF(radio frequency) well heater.
Partition wall 132 extends to the bottom of chamber 110, and it can be positioned at the side of pedestal 130.Between partition wall 132 and the inwall of chamber 110, J-shaped lining 140 can be installed.Lining 140 produces eddy current for preventing at chamber 110.So the waste gas in chamber 110 can be emptying smoothly, therefore can avoid, between the inwall of chamber 110 and partition wall 132, particle deposition occurs.This lining 140 can be made with quartz.In this embodiment, user can select whether to use lining 140.
Can be formed on the bottom of chamber 110 for the discharge orifice 111 of waste gas last after emission treatment and particle.So last waste gas and particle can be discharged discharge orifice 111 along lining 140 after processing.Can also be in discharge orifice 111 installation pump (not shown) and off gas scrubber (not shown) or similar devices, for arranged gas cleaning.
Temperature sensor 210 can be positioned at the outer tip end of chamber 110.Temperature sensor 210 is for measuring the temperature of chamber 110 substrates 10 and pedestal 130.Temperature sensor 210 can adopt the contactless thermometer that carrys out sensing temperature by optical means.Therefore, sensing ports 211 can be installed on gas supply unit 120, to make way for temperature sensor 210 outside state space and can measure the temperature of substrate 10 or pedestal 130.
Fig. 2 shows the figure of the control device for substrate deposition device according to an embodiment of the invention.
Referring to Fig. 2, comprise according to the control device for substrate deposition device of this embodiment, waveform extracting device 220, region disconnecting device 230, substrate regions separator 240, temperature comparator 250, swing circle detector 260, rotary speed detector 270, and wave height comparer 280 and tester 290.
The temperature that waveform extracting device 220 can sense temperature sensor 210 is extracted as a time dependent temperature waveform.That is to say, in the situation that pedestal 130 rotates, make the light of temperature sensor 210 towards pedestal 130 radiation predetermined wavelengths, meanwhile, the light reflecting from pedestal 130 and substrate 10 can be continued to sense by temperature sensor 210.By this method, the numerical value of the pedestal 130 that waveform extracting device 220 can sense temperature sensor 210 and the temperature of substrate 10 with degree Celsius etc. unit calculate, then extract calculation result, obtain a time dependent temperature waveform.
The temperature waveform that region disconnecting device 230 can extract waveform extracting device 220 is divided into base region and substrate regions.Namely, region disconnecting device 230 for by base region, that is, has the region of relatively-high temperature degree waveform, and with substrate regions, that is, the region with relative low temperature degree waveform separates.In addition, base region and substrate regions be distinguished and be distinguished to region disconnecting device 230 can by predetermined temperature range, or by predetermined rotation angle unit, base region is separated with substrate regions.By this method, region disconnecting device 230 can allow base region temperature and substrate regions temperature clearly make a distinction.
Substrate regions separator 240 can separate substrate regions in time.Namely, keep pedestal 130 to rotate, substrate regions can be divided into initiation region, region intermediate and end region, initiation region refers to that the sensing that substrate 10 is carried out starts part.Initiation region refers to the region that sensing that the temperature of substrate 10 is carried out starts, and end region refers to the region that sensing that the temperature of substrate 10 is carried out finishes.Namely, initiation region and end region be corresponding to the temperature at the edge of substrate 10, and region intermediate is corresponding to the central temperature of substrate 10.
Temperature comparator 250 these assemblies are used for the relatively temperature of initiation region, region intermediate and the end region of substrate regions.Temperature comparator 250 can compare initiation region and the region intermediate of substrate regions, also can compare end region and the region intermediate of substrate regions.
The quantity of the substrate 10 that swing circle detector 260 can support according to pedestal 130, or according to the quantity that is formed on the recess 131 in pedestal 130, detect a swing circle of pedestal 130.For example, if there are six recesses 131 in pedestal 130, and in each recess 131, support a substrate 10, in a temperature waveform, can occur so six substrate regions or six base regions.So swing circle detector 260 can detect a temperature waveform area with six substrate regions or six base regions, that is, and a swing circle.
A swing circle of the pedestal 130 that rotary speed detector 270 can detect according to swing circle detector 260, detects the speed of rotation of pedestal 130.
Wave height comparer 280 can compare the wave height of a corresponding base region of swing circle of pedestal 130.Namely, shown in above-mentioned example, in pedestal 130, there are six recesses 131, and in each recess 131, supported a substrate 10, therefore in pedestal 130 swing circle, can there are six base regions.So, wave height comparer 280 just can compare the wave height of these six base regions.
Tester 290 can adopt the comparative result of temperature comparator 250 to measure the condition of surface of substrate 10.
Namely, if in the temperature waveform of substrate regions, initiation region A1 and end region A3 be lower than region intermediate A2, just tester 290 is measured substrate 10 bending has been occurred so.The reason that temperature changes is, along with substrate edges bends, being heated of substrate 10 edges may be less than the central authorities of substrate 10, or may be also, when the luminous reflectance that comes, diffuse-reflectance occurs, thereby caused luminous reflectance factor reduction from temperature sensor 120 radiation.
In addition, if the temperature waveform of substrate regions uprises gradually towards end region A3, the surface that tester 290 can be measured substrate 10 has so occurred to upwarp.Equally, if the temperature waveform of substrate regions reduces gradually towards end region A3, the surface that tester 290 also can be measured substrate 10 has so occurred to upwarp.
In addition, if the temperature waveform of substrate regions is irregular, it is impaired that tester 290 can be measured the surface of substrate 10 so, or have external substance to stick on the surface of substrate 10.
In addition, tester 290 can be measured the driving condition of pedestal 130, in mensuration, adopt the speed of rotation of the pedestal 130 being detected by rotary speed detector 270, and the height comparative result between each base region a swing circle of pedestal 130 obtaining from wave height comparer 280.
Namely, tester 290 can be measured, and the speed of rotation of the pedestal being detected by rotary speed detector 270 is faster than preset speed of rotation or is slower than preset speed of rotation.
In addition, if the wave height comparative result between each base region shows in a swing circle of pedestal 130, base region raises gradually or reduces, and tester 290 is measured pedestal 130 swing has been occurred so.
Below will describe according to the control method of the substrate deposition device of this embodiment.
Fig. 3 is according to an embodiment of the invention for the sequence chart of control method of substrate deposition device is described.
As shown in Figure 3, the control method of substrate deposition device can comprise according to an embodiment of the invention, technique initial step S11, temperature sensing step S13, waveform extracting step S15, region disconnecting step S17 and determination step S19.
In this step of technique initial step S11, on the pedestal 130 in substrate 10 is installed to chamber 110 and being heated, initial depositing operation on substrate 10, then, by the rotation of pedestal 130, is fed to process gas in chamber 110.In this step of temperature sensing step S13, the temperature of the temperature by temperature sensor 210 to pedestal 130 and substrate 10 is carried out sensing, and temperature sensor 210 is positioned at pedestal 130 tops.In this step of waveform extracting step S15, the temperature being sensed by temperature sensor 210 is extracted as to a time dependent temperature waveform.In this step of region disconnecting step S17, according to temperature waveform, corresponding the temperature of pedestal 130 base region is separated with the corresponding substrate regions of temperature of substrate 10.In this step of determination step S19, according to the temperature waveform of the temperature waveform of substrate regions and base region, measure the condition of surface of substrate and the driving condition of pedestal.
Fig. 4 is the figure in good substrate for instruction card surface state.Fig. 5 shows the graphic representation of condition of surface when substrate temperature waveform when good.
Referring to Fig. 4 and Fig. 5, if the condition of surface of substrate 10 is good, after arranging in substrate 10 being taken in chamber 110 and make it the recess 131 at pedestal 130 so, base region B separates with substrate regions A, and the temperature waveform of substrate regions A is rendered as the pattern of rule relatively simultaneously.Namely, after testing, the temperature on whole substrate 10 regions is almost uniformly, and meanwhile, extracting is almost smooth from the temperature waveform of the initiation region of substrate regions A A1, region intermediate A2 and end region A3.
By this method, be almost smooth if extracted from the temperature waveform of the initiation region of substrate regions A A1, region intermediate A2 and end region A3, just the condition of surface that tester 290 is measured substrate 10 is so good, therefore process can be proceeded.
Fig. 6 shows the graphic representation of temperature waveform in the time that substrate bends.Fig. 7 is the figure of the situation that upwarps for substrate is described.
Referring to Fig. 6 and Fig. 7, if bending has occurred substrate 10, in the temperature waveform of substrate regions A, initiation region A1 and end region A3 may exceed region intermediate A2 so.Namely, the edge of substrate 10 may be spaced apart with the basal surface of recess 131, and the central authorities of substrate may be supported on recess 131, contact with the basal surface of recess 131.Therefore, if substrate edges bends, being heated of the edge of substrate 10 may be less than the central authorities of substrate 10 so, or, from temperature sensor 120 radiation come luminous reflectance time may there is diffuse-reflectance, cause luminous reflectance factor reduce.So if in the temperature waveform of substrate regions A, initiation region A1 and end region A3 be lower than region intermediate A2, just tester 290 is measured substrate bending has been occurred so.
Fig. 8 is the figure of the situation that upwarps for substrate is described.Fig. 9 shows the graphic representation of temperature waveform in the time that substrate upwarps.
Referring to Fig. 8 and Fig. 9, if because the processing factor such as equipment vibrations causes substrate 10 not arrange in recess 131, or substrate 19 some fall recess 131 outsides, the temperature waveform of substrate regions A raises gradually or reduces towards end region A3 so.Namely, if some falls recess 131 outsides of substrate 10 and substrate 10 is supported on recess 131 substrate 10, substrate 10 may occur to upwarp so, and meanwhile, may fluctuate with the gradient that upwarps substrate 10 in the reflection of light angle of reflecting from substrate 10.So the factor such as distance, the time that light arrives temperature sensor 210 that light reflexes to temperature sensor 210 from substrate 10 can change, thereby causes light intensity or light quantity that temperature sensor 210 senses increase gradually or reduce.
Therefore, if the temperature waveform of the substrate regions A extracting raises gradually or reduces towards end region A3, the surface that tester 290 is measured substrate 10 has so occurred to upwarp, and therefore controller (not shown) can allow process stop.
Figure 10 is the figure of the damage situations for substrate surface is described.Figure 11 shows the graphic representation of surface when substrate temperature waveform when impaired.
Referring to Figure 10 and Figure 11, if when process is carried out, the surface of substrate 10 is impaired or have external substance to adhere to, and the temperature waveform of substrate regions A may be rendered as irregular pattern so.Namely, if substrate 10 is impaired or have external substance to adhere on the surface of substrate 10, the light that substrate 10 reflects so can cause in reflex time generation diffuse-reflectance because depression, projection etc. are formed on the defect in substrate.So the factor such as distance, the time that light arrives temperature sensor 210 that light reflexes to temperature sensor 210 from substrate 10 can change brokenly, thereby the light intensity or the light quantity that cause temperature sensor 210 to sense are inhomogeneous.
Therefore, if the temperature waveform of the substrate regions A extracting has irregular pattern, it is impaired or have external substance to adhere on the surface of substrate 10 that tester 290 is measured the surface of substrate 10 so, and therefore controller (not shown) can allow process stop.
Figure 12 is the vertical view that schematically shows the driving condition of the pedestal that substrate is supported.Figure 13 is for the figure of driving condition in good pedestal is described.Figure 14 shows the graphic representation of driving condition when pedestal temperature waveform when good.
In Figure 12, have in six recesses 131 and each recess 131 and hold a substrate 10, one example below will be described, understand the present invention to facilitate.
To Figure 14, in each of six recesses 131, hold a substrate 10, referring to Figure 12 in the situation that pedestal rotates, by the surface temperature of the temperature of six substrates 10 of temperature sensor 210 sensings and the pedestal between recess 131.The temperature of measuring gained is extracted as the temperature waveform shown in Fig. 6 by waveform extracting device 220.Region disconnecting device 230 by base region B, that is, has the region of comparatively high temps waveform, and with substrate regions A, that is, the region with lesser temps waveform separates.
In this case, pedestal 130 rotates and once can occur six base region B and six substrate regions A.Base region B or substrate regions A that swing circle detector 240 detects from first, detect an area that comprises six base region B and six substrate regions A, as a swing circle of pedestal 130.Rotary speed detector 250 can, according to of pedestal 130 swing circle, detect the speed of rotation of pedestal 130.
Whether speed of rotation and the preset speed of rotation of the pedestal 130 that tester 290 detects rotary speed detector 250 compare, normal to measure the speed of rotation of pedestal 130.
In addition, if pedestal 130 normally rotation in flat position, the wave height of six base region B is almost uniformly so, as shown in Figure 6.So tester 290 is measured pedestal 130 normally rotation in flat position.
Figure 15 shows the figure of the swing situation of pedestal.Figure 16 shows the graphic representation of temperature waveform in the time that pedestal occurs to swing.
Referring to Figure 15 and Figure 16, if pedestal 130 swings, the surface of pedestal 130 may occur to upwarp so.So may fluctuate with the gradient of pedestal 130 in the reflection of light angle of reflecting from pedestal 130.Namely, the factor such as distance, the time that light arrives temperature sensor 210 that light reflexes to temperature sensor 210 from pedestal 130 can change, thereby causes light intensity or light quantity that temperature sensor 210 senses increase gradually or reduce.
Therefore,, if the temperature waveform of base region raises gradually in time or reduces, just tester 290 is measured pedestal swing has been occurred so, therefore controller (not shown) just can allow process stop.
[sequence number list]
A: substrate regions A1: initiation region
A2: region intermediate A2: end region
B: base region 10: substrate
110: chamber 120: gas supply unit
122: the second process gas passages of 121: the first process gas passages
123: sweep gas passage 124: cooling channel
130: pedestal 131: recess
132: partition wall 140: lining
210: temperature sensor 211: sensing ports
220: waveform extracting device 230: region disconnecting device
240: substrate regions separator 250: temperature comparator
260: swing circle detector 270: rotary speed detector
280: wave height comparer 290: tester
Claims (21)
1. for a control device for substrate deposition device, described control device comprises:
Temperature sensor, is placed on the temperature of the substrate in chamber for sensing;
Waveform extracting device, for by by described temperature sensor senses to substrate temperature be extracted as time dependent temperature waveform; And
Tester, for according to the described temperature waveform of described substrate, measures whether described substrate bends and condition of surface and the gradient of described substrate.
2. control device according to claim 1, further comprises:
Substrate regions separator, for being divided in time initiation region, region intermediate and end region by the described temperature waveform of described substrate; And
Temperature comparator, for comparing the temperature waveform corresponding with described initiation region, region intermediate and end region of described substrate.
3. for a control device for substrate deposition device, described control device comprises:
Temperature sensor, is placed on the temperature of the pedestal in chamber for sensing;
Waveform extracting device, for by by described temperature sensor senses to base-plate temp be extracted as time dependent temperature waveform; And
Tester, for according to the described temperature waveform of described pedestal, measures the rotating state of described pedestal.
4. control device according to claim 3, wherein, described temperature sensor is also supported on the temperature of the substrate on described pedestal for sensing; And described control device further comprises region disconnecting device, for temperature waveform being divided into the corresponding base region of base-plate temp and the corresponding substrate regions of substrate temperature.
5. control device according to claim 4, wherein, described region disconnecting device is for being divided into by whole temperature waveform the substrate regions that is rendered as the base region of relatively high temperature waveform and is rendered as lower temperature waveform than described base region.
6. control device according to claim 1, further comprises:
Swing circle detector, for according to the quantity of the quantity of substrate regions or base region, detects a swing circle of described pedestal; And
Rotary speed detector, for a swing circle of the described pedestal that detects according to described swing circle detector, detects the speed of rotation of described pedestal.
7. control device according to claim 6, further comprises wave height comparer, for the wave height of a corresponding described base region of swing circle of more described pedestal,
Wherein, described tester, for according to the wave height comparative result between an each base region of swing circle of described pedestal, is measured described pedestal whether swing has been occurred.
8. for a control method for substrate deposition device, described control method comprises:
Technique initial step, in the situation that substrate is heated in chamber, initial depositing operation on described substrate, is then fed to process gas in described chamber;
Temperature sensing step, carries out sensing by temperature sensor to the temperature of described substrate;
Waveform extracting step, by by described temperature sensor senses to substrate temperature be extracted as time dependent temperature waveform;
Region disconnecting step, for according to described temperature waveform, separates corresponding the temperature of described pedestal base region and the corresponding substrate regions of temperature of described substrate; And
Whether determination step, according to the temperature waveform of described substrate, measure described substrate and bend, and the condition of surface of described substrate and gradient.
9. control method according to claim 8, further comprises substrate regions separating step, for the temperature waveform of described substrate is divided into initiation region, region intermediate and end region in time.
10. control method according to claim 9, further comprises temperature comparison step, for the temperature waveform corresponding with described initiation region, region intermediate and end region of described substrate compared.
11. control methods according to claim 10, wherein, in described determination step, if the temperature waveform of described region intermediate, higher than the temperature waveform of described initiation region or described end region, is measured so described substrate bending has been occurred.
12. control methods according to claim 10, wherein, in described determination step, if the temperature waveform of described substrate regions reduces gradually towards described end region, the surface of measuring so described substrate has occurred to upwarp.
13. control methods according to claim 10, wherein, in described determination step, if the temperature waveform of described substrate regions raises gradually towards described end region, the surface of measuring so described substrate has occurred to upwarp.
14. control methods according to claim 10, wherein, in described determination step, if the temperature waveform of described substrate is irregular, measure the surface of described substrate impaired or have external substance to adhere on the surface of described substrate so.
15. 1 kinds of control methods for substrate deposition device, described control method comprises:
Technique initial step, in the case of the pedestal rotation of chamber inner support substrate, initial depositing operation on described substrate, is then fed to process gas in described chamber;
Temperature sensing step, carries out sensing by temperature sensor to the temperature of described pedestal;
Waveform extracting step, by by described temperature sensor senses to base-plate temp be extracted as time dependent temperature waveform;
Pedestal driving condition determination step, according to the temperature waveform of described pedestal, measures the rotating state of described pedestal.
16. control methods according to claim 15, wherein, described temperature sensor all carries out sensing to base-plate temp and substrate temperature, and described control method further comprises region disconnecting step, for temperature waveform being divided into the substrate regions that is rendered as the base region of relatively high temperature waveform and is rendered as lower temperature waveform than described base region.
17. control methods according to claim 16, wherein, detect a swing circle of described pedestal according to the quantity of the quantity of substrate regions and base region.
18. control methods according to claim 17, wherein, detect the speed of rotation of described pedestal according to described pedestal swing circle.
19. control methods according to claim 17, wherein, compare the wave height of a corresponding each base region of swing circle of described pedestal.
20. control methods according to claim 19, wherein, according to the wave height comparative result between each base region in a swing circle of described pedestal, measure described pedestal whether swing have occurred.
21. control methods according to claim 17, wherein, if the wave height comparative result between each base region shows in a swing circle of described pedestal, described base region raises gradually or reduces, and measures so described pedestal swing has occurred.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0156700 | 2012-12-28 | ||
| KR1020120156700A KR20140086348A (en) | 2012-12-28 | 2012-12-28 | Control apparatus for substrate deposition apparatus and control method thereof |
| KR1020130161972A KR20150074325A (en) | 2013-12-24 | 2013-12-24 | Control apparatus for substrate deposition apparatus and control method thereof |
| KR10-2013-0161973 | 2013-12-24 | ||
| KR1020130161973A KR20150074326A (en) | 2013-12-24 | 2013-12-24 | Control apparatus for substrate deposition apparatus and control method thereof |
| KR10-2013-0161972 | 2013-12-24 |
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| CN103911604A true CN103911604A (en) | 2014-07-09 |
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| CN106480412A (en) * | 2015-08-24 | 2017-03-08 | 圆益Ips股份有限公司 | Substrate board treatment and substrate processing method using same |
| CN106480412B (en) * | 2015-08-24 | 2019-02-05 | 圆益Ips股份有限公司 | Substrate board treatment and substrate processing method using same |
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Application publication date: 20140709 |