KR20150074326A - Control apparatus for substrate deposition apparatus and control method thereof - Google Patents

Abstract

The present invention relates to a control device for a substrate deposition device and a control method thereof capable of measuring and determining the overall surface state of a substrate using temperatures detected by a temperature detection part for detecting the temperatures of a substrate. The control device for a substrate deposition device comprises: a temperature detection part for detecting the temperature of a substrate to be deposited in a chamber and a susceptor for supporting the substrate; a waveform deduction part for deducting a waveform of temperature variation against time from the temperatures detected by the temperature detection part; a section division part for dividing the temperature waveform into a susceptor section corresponding to the temperatures of the susceptor and a substrate section corresponding to the temperatures of the substrate; and a determination part for determining the surface state of the substrate according to the temperature waveform of the substrate section. Thus, the present invention can reduce the manufacturing costs of a substrate deposition device and can make the configuration simple.

Description

BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates to a control apparatus for a substrate deposition apparatus,

The present invention relates to a control apparatus for a substrate deposition apparatus and a control method thereof, and more particularly, to a control apparatus for a substrate deposition apparatus using an apparatus for measuring a substrate temperature and a control method thereof.

In order to manufacture a light emitting display device, a film such as AlN, GaAs, GaN, or InP must be deposited. These films are deposited by chemical vapor deposition (CVD), molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), or the like. In these deposition methods, a substrate is placed inside the chamber in a vacuum state, and a process gas is supplied onto the substrate so that a crystal layer is deposited on the surface of the substrate.

The substrate deposition apparatus is provided with a heater for heating the substrate, and a monitoring apparatus for measuring the temperature of the substrate in the chamber is installed together with the substrate deposition apparatus. The monitoring device is used to control the heating temperature of the heater.

As a device for monitoring the temperature of the substrate, a pyrometer which monitors infrared rays generated from the surface of the substrate by heat is used. The pyrometer is installed on the outside of the window installed in the chamber. The temperature of the pyrometer is measured by detecting the infrared ray when the infrared ray generated from the surface of the substrate or the semiconductor layer during film formation passes through the window.

On the other hand, it is possible to prevent defects (e.g., surface damage, adhesion of foreign matter, etc.) on the surface of the substrate that have not yet been found, bowing by heating the substrate at a high temperature, May not only degrade process efficiency formed on the substrate but may also cause a problem of degrading the quality of the crystal layer formed on the substrate.

Therefore, during the film formation process of the substrate, the surface condition of the substrate should be observed, and if necessary, operations for temperature control of the substrate and process control should be performed.

Conventionally, temperature sensing of the substrate and detection of the surface state of the substrate have been performed using a separate device. However, the sensing device for sensing the surface state of the substrate and the pyrometer for sensing the temperature of the substrate has a problem that the manufacturing cost of the substrate deposition apparatus is increased due to a very expensive component.

Japanese Patent Application Laid-Open No. 2001-289714 Japanese Patent Laid-Open No. 2002-367907

SUMMARY OF THE INVENTION It is an object of the present invention to provide a control apparatus and method for a substrate deposition apparatus that can measure and determine an overall surface state of a substrate using a temperature sensed by a temperature sensing unit for sensing a temperature of the substrate .

A control apparatus of a substrate deposition apparatus according to the present invention includes a temperature sensing unit for sensing a temperature of a substrate to be vapor-deposited in a chamber and a susceptor for supporting the substrate, a temperature sensing unit for sensing a temperature change A region separator for separating the susceptor region into a substrate region corresponding to the temperature of the substrate and a susceptor region corresponding to the temperature of the susceptor according to the temperature waveform, And a determination unit for determining the surface state of the substrate.

The region separator may separate a region having a relatively high temperature waveform into the susceptor region and a region having a temperature waveform lower than the susceptor region into the substrate region.

The control apparatus of the substrate deposition apparatus may further include a substrate region separator for separating the temperature waveform in the substrate region into a start region, an intermediate region, and an end region over time.

The controller of the substrate deposition apparatus may further include a temperature comparator for comparing the temperature waveform corresponding to the start region, the middle region, and the end region.

Meanwhile, in a method of controlling a substrate deposition apparatus according to the present invention, a substrate is placed on a susceptor in a chamber, the substrate is heated, the susceptor is rotated, a process gas is supplied into the chamber, A temperature sensing step of sensing a temperature of the susceptor and a temperature of the substrate by a temperature sensing unit disposed above the susceptor, a temperature sensing step of sensing the temperature sensed by the temperature sensing unit over time And a substrate area corresponding to the temperature of the substrate, the temperature of the susceptor corresponding to the temperature of the susceptor, and the temperature waveform of the substrate area, And determining a surface state of the substrate according to the determination result.

In the region separation step, a region having a relatively high temperature waveform may be separated into the susceptor region and a region having a temperature waveform lower than the susceptor region may be separated into the substrate region.

The control method of the substrate deposition apparatus may further include a substrate region separation step of separating the temperature waveform in the substrate region into a start region, an intermediate region, and an end region with the lapse of time.

The control method of the substrate deposition apparatus may further include a temperature comparison step of comparing the temperature waveforms corresponding to the start region, the middle region, and the end region.

The step of determining the substrate surface state may determine that the substrate is tilted when the temperature waveform of the substrate area gradually decreases from the temperature comparison step toward the end area.

The step of determining the substrate surface state may determine that the substrate is tilted when the temperature waveform of the substrate area gradually increases toward the end region in the temperature comparison step.

The step of determining the substrate surface state may determine that the surface of the substrate is damaged if the temperature waveform in the substrate area changes to an irregular height.

A control apparatus and a control method thereof for a substrate deposition apparatus according to the present invention detect a temperature of a substrate and a susceptor by using a temperature sensing apparatus such as a pyrometer which senses a temperature of a substrate in a substrate deposition apparatus, It is possible to determine the overall surface state of the substrate, thereby reducing the manufacturing cost of the substrate deposition apparatus and simplifying the configuration.

1 is a view showing a substrate deposition apparatus according to the present embodiment.
2 is a view showing a control apparatus of the substrate deposition apparatus according to the present embodiment.
3 is a flowchart for explaining a control method of the substrate deposition apparatus according to the present embodiment.
4 is a diagram for explaining a state in which the surface state of the substrate is good.
5 is a graph showing a temperature waveform with a good surface state of the substrate.
6 is a view for explaining a state in which the substrate is inclined.
7 is a graph showing a temperature waveform in a state where the substrate is inclined.
8 is a view for explaining a state in which the surface of the substrate is damaged.
9 is a graph showing a temperature waveform in a state where the surface of the substrate is damaged.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a control apparatus and a control method thereof for a substrate deposition apparatus according to the present invention will be described with reference to the drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, To be fully informed.

Hereinafter, a substrate deposition apparatus according to the present embodiment will be described with reference to the accompanying drawings.

1 is a view showing a substrate deposition apparatus according to the present embodiment.

Referring to FIG. 1, a substrate deposition apparatus according to an embodiment of the present invention may include a chamber 110, a gas supply unit 120, a susceptor 130, and a temperature sensing unit 210.

Inside the chamber 110, a space may be formed in which a deposition process is performed on the substrate.

The gas supply unit 120 may be disposed at an upper portion of the chamber 110. The gas supply unit 120 may be integrated with a lid for opening and closing the inside of the chamber 110. The gas supply part 120 injects the process gas into the chamber 110. The gas supply unit 120 is provided in the form of a shower head including a first process gas flow path 121, a second process gas flow path 122, a purge gas flow path 123 and a cooling flow path 124 .

The first process gas flow path 121 and the second process gas flow path 122 may have independent flow paths. This is a structure for preventing the first process gas and the second process gas from mixing. The purge gas flow path 123 may be formed at the edge of the gas supply part 120. The purge gas prevents the process gases supplied into the chamber 110 from being directed to the inner wall of the chamber 110 to prevent particles from depositing on the inner wall of the chamber 110. The cooling flow path 124 may be disposed below the first process gas flow path 121 and the second process gas flow path 122. Accordingly, the first process gas and the second process gas can be supplied to the interior of the chamber 110 across the cooling channel 124. Since the coolant flows through the cooling channel 124, the lower surface of the gas supply unit 120 can be cooled. This is a structure for preventing the reaction of the process gas from occurring on the lower surface of the gas supply part 120.

The susceptor 130 is disposed below the gas supply unit 120. A plurality of pockets 131 may be formed on the upper surface of the susceptor 130. The substrates 10 can be respectively seated inside the plurality of pockets 131. The substrate 10 may be one capable of performing an epitaxial process such as gallium nitride, sapphire, or the like. A rotating shaft may be installed below the susceptor 130. A motor may be connected to the lower end of the rotating shaft of the susceptor 130 extending to the outside of the chamber 110. Accordingly, the susceptor 130 can be rotated by the motor and the rotating shaft during the process.

The susceptor 130 may be provided with a heater 133 for heating the susceptor 130 to adjust the temperature of the substrate 10. The plurality of heaters 133 may be provided so that individual temperatures can be controlled for each region of the susceptor 130. Each of the heaters 133 can heat the substrate 10 placed on the susceptor 130 to 600 ° C to 1,300 ° C. The heater 133 may be a tungsten heater or a radio frequency heater.

A partition wall 132 extending to the bottom of the chamber 110 may be disposed on the side of the susceptor 130. A 'J' type liner 140 may be provided between the partition 132 and the inner wall of the chamber 110. The liner 140 prevents vortices from being generated inside the chamber 110. Therefore, waste gas in the chamber 110 can be smoothly discharged, and particles can be prevented from being deposited on the inner wall of the chamber 110 and the partition wall 132. The liner 140 may be made of quartz. In this embodiment, the user can select whether to use the liner 140 or not.

In the lower portion of the chamber 110, an exhaust hole 111 through which waste gas and particles remaining after the process are discharged may be formed. Therefore, waste gas and particles remaining after the process can be guided by the liner 140 and discharged to the exhaust hole 111. A pump (not shown) and a gas scrubber (not shown) for purifying the exhaust gas may be installed in the exhaust hole 111.

On the other hand, the temperature sensing unit 210 may be disposed outside the chamber 110. The temperature sensing unit 210 measures the temperature of the substrate 10 and the susceptor 130 in the chamber 110. As the temperature sensing unit 210, a non-contact thermometer for sensing the temperature optically may be used. The sensing port 211 may be installed in the gas supply unit 120 so that the temperature sensing unit 210 can measure the temperature of the substrate 10 or the susceptor 130 outside the process space.

2 is a view showing a control apparatus of the substrate deposition apparatus according to the present embodiment.

2, the controller of the substrate deposition apparatus according to the present embodiment includes a waveform derivation unit 220, a region separation unit 230, a substrate region separation unit 240, a temperature comparison unit 250, 260).

The waveform derivation unit 220 can derive the temperature sensed by the temperature sensing unit 210 as the temperature waveform of the amount of change over time. That is, the temperature sensing unit 210 irradiates light of a predetermined wavelength toward the susceptor 130, and as the susceptor 130 rotates, light reflected from the susceptor 130 and the substrate 10 is continuously May be sensed by the temperature sensing unit 210. In this way, the waveform derivation unit 220 numerically calculates the temperature of the susceptor 130 sensed by the temperature sensing unit 210 and the temperature of the substrate 10 in units such as Celsius, and outputs the calculated result as a variation with time As shown in Fig.

The region separation unit 230 can separate the susceptor region and the substrate region from the temperature waveform derived by the waveform derivation unit 220. That is, the region separator 230 separates the region of the relatively high temperature waveform into the susceptor region, and separates the region of the temperature waveform that is lower than the susceptor region into the substrate region. The region separator 230 can separate the susceptor region and the substrate region in a predetermined temperature range, or separate the susceptor region and the substrate region in units of a predetermined rotation angle. Thus, the region separator 230 can accurately distinguish the temperature of the susceptor region from the temperature of the substrate region.

The substrate region separation unit 240 can separate the region-by-region temperature of the substrate 10 from the substrate region separated by the region separation unit 230 over time. That is, as the susceptor 130 is rotated, the substrate region can be divided into a start region, an intermediate region, and an end region where detection is started with respect to the substrate 10. The start region is a region near the start of temperature sensing of the substrate 10, and the end region is a region near the end of temperature sensing of the substrate 10. [ That is, the start region and the end region are the temperature of the region corresponding to the rim portion of the substrate 10, and the middle region is the temperature of the region corresponding to the central portion of the substrate 10.

The temperature comparator 250 compares the temperatures of the start region, the middle region, and the end region of the substrate region. The temperature comparator 250 can compare the start area and the middle area of the substrate area or the end area and the middle area.

The determination unit 260 may determine the surface state of the substrate 10 using the comparison result of the temperature comparison unit 250. [ That is, the determination unit 260 can determine that the surface of the substrate 10 is inclined if the temperature waveform of the substrate region is gradually increased toward the end region A3. Similarly, the determination unit 260 can determine that the surface of the substrate 10 is tilted if the temperature waveform of the substrate region is gradually decreased toward the end region. Meanwhile, if the temperature waveform of the substrate region is irregular, the determination unit 260 may determine that the surface of the substrate 10 is damaged or foreign matter adheres to the surface of the substrate 10.

Hereinafter, a control method of the substrate deposition apparatus according to the present embodiment will be described.

3 is a flowchart for explaining a control method of the substrate deposition apparatus according to the present embodiment.

3, the control method of the substrate deposition apparatus according to the embodiment of the present invention includes a process starting step S11, a temperature sensing step S13, a waveform deriving step S15, a region separation step S17, And a surface state determination step S19.

In the process starting step S11, the substrate is placed on the susceptor 130 inside the chamber 110, the substrate 10 is heated, the susceptor 130 is rotated, and the process gas is supplied into the chamber 110, (10) is started. The temperature sensing step S13 is a step in which the temperature of the susceptor 130 and the temperature of the substrate 10 are sensed by the temperature sensing unit 210 disposed on the upper side of the susceptor 130. [ The waveform derivation step S15 is a step in which the temperature sensed by the temperature sensing unit 210 is derived as the temperature waveform of the amount of change over time. The region separation step S17 is a step of separating the susceptor region corresponding to the temperature of the susceptor 130 and the substrate region corresponding to the temperature of the substrate 10 according to the temperature waveform. The substrate surface state determination step S19 is a step of determining the surface state of the substrate 10 according to the temperature waveform of the substrate region.

Fig. 4 is a view for explaining a state in which the surface state of the substrate is good, and Fig. 5 is a graph showing a temperature waveform in which the surface state of the substrate is good.

4 and 5, if the substrate 10 having a good surface condition is brought into the chamber 110 and the substrate 10 is aligned with the pockets 131 of the susceptor 130, And the substrate region A are separated, and the temperature waveform of the substrate region A shows a relatively uniform temperature waveform. That is, the temperature is detected at a substantially uniform temperature with respect to the entire surface of the substrate 10, and the temperature waveform is substantially flat until reaching the start area A1, the middle area A2, and the end area A3 of the substrate area A. . ≪ / RTI >

When the temperature waveform is substantially flattened to the start area A1, the middle area A2 and the end area A3 of the substrate area A as described above, It is determined that the state is good, and the process can be continued.

FIG. 6 is a view for explaining a state in which the substrate is inclined, and FIG. 7 is a graph showing a temperature waveform in a state where the substrate is inclined.

6 and 7, if the substrate 10 is not aligned with the pockets 131, or if the substrate 10 is partially removed from the pockets 131 due to process factors such as vibration of the equipment, A may gradually increase toward the end region A3 or gradually decrease toward the end region A3. That is, if a part of the substrate 10 is removed from the pockets 131 of the substrate 10 and the substrate 10 is supported on the pockets 131 in a tilted state, the substrate 10 is tilted and tilted, The reflection angle of the light reflected from the substrate 10 can be changed. Accordingly, the distance or reaching time of the light reflected by the substrate 10 to the temperature sensing unit 210 is changed, so that the light intensity or amount of light sensed by the temperature sensing unit 210 gradually decreases or increases .

When the temperature waveform of the substrate area A is determined to gradually increase or decrease toward the end area A3 as described above, the determination unit 260 determines that the surface of the substrate 10 is inclined, The control unit can stop the process.

FIG. 8 is a view for explaining a state in which the surface of the substrate is damaged, and FIG. 9 is a graph showing a temperature waveform in a state where the surface of the substrate is damaged.

Referring to FIGS. 8 and 9, if the surface of the substrate 10 is damaged or foreign matter adheres to the substrate, the temperature waveform of the substrate area A may have an irregular shape. That is, when the substrate 10 is damaged or foreign matter adheres to the surface of the substrate 10, the light reflected from the substrate 10 is diffused by grooves or protrusions formed on the substrate, The distance to reach the light source 210, the time to reach the light source 210, and the like may be irregularly changed, so that the light intensity or light amount of the light sensed by the temperature sensing unit 210 may be irregular.

When the temperature waveform of the substrate region A is irregularly shaped as described above, the determination unit 260 determines that the surface of the substrate 10 is damaged or foreign matter adheres to the surface of the substrate 10, The control unit can stop the process.

The embodiments of the present invention described above and shown in the drawings should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art will be able to modify the technical idea of the present invention in various forms. Accordingly, such improvements and modifications will fall within the scope of the present invention as long as they are obvious to those skilled in the art.

A: Substrate area A1: Start area
A2: intermediate area A3: end area
B: susceptor region 10: substrate
110: chamber 120: gas supply part
121: First process gas flow path 122: Second process gas flow path
123: purge gas flow path 124: cooling flow path
130: susceptor 131: pocket
132: partition wall 140: liner
210: temperature sensing unit 211: sensing port
220: waveform derivation unit 230: region separation unit
240: substrate region separation unit 250: temperature comparison unit
260:

Claims (9)

A temperature sensing unit for sensing a temperature of a substrate to be deposited in the chamber;
A waveform derivation unit for deriving the temperature of the substrate sensed by the temperature sensing unit as a temperature waveform of a variation over time;
And a determination unit determining a surface state and an inclination of the substrate according to a temperature waveform of the substrate.
The method according to claim 1,
Further comprising a substrate region separator for separating the temperature waveform of the substrate into a start region, an intermediate region, and an end region with the elapse of time.
3. The method of claim 2,
Further comprising a temperature comparator for comparing the temperature waveform corresponding to the start region, the middle region, and the end region.
A process starting step in which a substrate inside the chamber is heated and a process gas is supplied into the chamber to start the deposition process for the substrate;
A temperature sensing step of sensing a temperature of the substrate by a temperature sensing unit;
A waveform deriving step of deriving the temperature of the substrate sensed by the temperature sensing unit as a temperature waveform of a variation over time;
And determining a surface state and an inclination of the substrate according to a temperature waveform of the substrate.
5. The method of claim 4,
Further comprising a substrate region separation step of separating the temperature waveform of the substrate into a start region, an intermediate region, and an end region with the elapse of time.
6. The method of claim 5,
Further comprising a temperature comparison step of comparing the temperature waveforms corresponding to the start region, the intermediate region, and the end region.
The method according to claim 6,
Wherein the determining step determines that the substrate is tilted when the temperature waveform of the substrate area gradually decreases toward the end area.
The method according to claim 6,
Wherein the determining step determines that the substrate is tilted when the temperature waveform of the substrate area gradually increases toward the end area.
The method according to claim 6,
Wherein the determining step determines that the surface of the substrate is damaged or foreign matter adheres to the surface of the substrate if the temperature waveform of the substrate is irregular.

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