KR20150074325A - Control apparatus for substrate deposition apparatus and control method thereof - Google Patents

Abstract

According to the present invention, a control device for a substrate deposition device capable of measuring and determining the driving state of a susceptor using temperatures detected by a temperature detection part for detecting the temperatures of a substrate comprises: a temperature detection part for detecting the temperatures of a susceptor arranged inside a chamber; a waveform deduction part for deducting a waveform of temperature variation against time from the temperatures of the susceptor detected by the temperature detection part; and a determination part for determining the rotating state of the susceptor according to the temperature waveform of the susceptor. Thus, the present invention can reduce the manufacturing costs of the substrate deposition device and can make the composition simple.

Description

BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates to a control apparatus for a substrate deposition apparatus,

The present invention relates to a control apparatus for a substrate deposition apparatus and a control method thereof, and more particularly, to a control apparatus for a substrate deposition apparatus using an apparatus for measuring a substrate temperature and a control method thereof.

In order to manufacture a light emitting display device, a film such as AlN, GaAs, GaN, or InP must be deposited. These films are deposited by chemical vapor deposition (CVD), molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), or the like. In these deposition methods, a substrate is placed inside the chamber in a vacuum state, and a process gas is supplied onto the substrate so that a crystal layer is deposited on the surface of the substrate.

The substrate deposition apparatus is provided with a heater for heating the substrate, and a monitoring apparatus for measuring the temperature of the substrate in the chamber is installed together with the substrate deposition apparatus. The monitoring device is used to control the heating temperature of the heater.

As a device for monitoring the temperature of the substrate, a pyrometer which monitors infrared rays generated from the surface of the substrate by heat is used. The pyrometer is installed on the outside of the window installed in the chamber. The temperature of the pyrometer is measured by detecting the infrared ray when the infrared ray generated from the surface of the substrate or the semiconductor layer during film formation passes through the window.

On the other hand, in the above-described deposition method, the deposition process proceeds while the susceptor supporting the substrate is driven to rotate to form a uniform film thickness on a plurality of substrates. Therefore, the rotational speed of the susceptor and the maintenance of the flatness of the susceptor can serve as important factors for determining the quality of the film formed on the substrate.

Therefore, during the film forming process of the substrate, the driving state of the susceptor should be observed, operation of the susceptor should be controlled and process control should be performed if necessary.

Conventionally, temperature sensing of the substrate and detection of the rotational driving state of the susceptor were performed using a separate device. However, the sensing device for detecting the susceptor driving state separately from the pyrometer for sensing the temperature of the substrate has a problem that the manufacturing cost of the substrate deposition apparatus is increased due to a very expensive component.

Japanese Patent Application Laid-Open No. 2001-289714 Japanese Patent Laid-Open No. 2002-367907

SUMMARY OF THE INVENTION It is an object of the present invention to provide a control apparatus and method for a substrate deposition apparatus that can measure and determine a driving state of a susceptor by using a temperature sensed by a temperature sensing unit for sensing a temperature of the substrate .

The controller of the substrate depositing apparatus according to the present invention includes a temperature sensing unit for sensing a temperature of a susceptor disposed in a chamber, a temperature sensor for sensing a temperature of the susceptor sensed by the temperature sensing unit, And a determination unit for determining a rotational driving state of the susceptor according to a temperature waveform of the susceptor.

Wherein the temperature sensing unit senses the temperature of the substrate supported by the susceptor at the same time, and the controller of the substrate deposition apparatus controls the temperature of the susceptor in accordance with the temperature waveform, And may further include a region dividing portion for dividing the substrate into the substrate region.

The region separator may separate a region having a relatively high temperature waveform into the susceptor region and a region having a lower temperature waveform than the susceptor region into the substrate region.

Wherein the controller of the substrate deposition apparatus includes a rotation period detection unit for detecting one rotation period of the susceptor based on the number of the substrate regions or the susceptor regions and a rotation period detection unit for detecting one rotation period of the susceptor detected by the rotation period detection unit And a rotation speed detector for detecting the rotation speed of the susceptor.

The controller of the substrate deposition apparatus may further include a peaks / valleys comparison unit for comparing peaks of the susceptor region corresponding to one rotation cycle of the susceptor, wherein the determination unit determines whether the susceptor region within one rotation period of the susceptor Whether or not the susceptor is wobbling can be determined according to the comparison result of the height of the wave.

The control method of a substrate deposition apparatus according to the present invention is characterized in that a substrate is placed on a susceptor in a chamber, the susceptor is rotated, and a process gas is supplied into the chamber to start a deposition process on the substrate A temperature sensing step of sensing a temperature of the susceptor by a temperature sensing unit, a waveform deriving step of deriving a temperature waveform of a change amount of the susceptor sensed by the temperature sensing unit with time, And determining a susceptor driving state of the susceptor based on the temperature waveform of the susceptor.

Wherein the temperature sensing unit senses the temperature of the substrate together, and the control method of the substrate deposition apparatus separates a region of a temperature waveform of the entire temperature waveform and a relatively high temperature waveform into the susceptor region, And separating a region of a lower temperature waveform into the substrate region.

The control method of the substrate deposition apparatus may detect one rotation cycle of the susceptor based on the number of the substrate regions or the susceptor regions.

The control method of the substrate deposition apparatus can detect the rotational speed of the susceptor using one rotation cycle of the susceptor.

The control method of the substrate deposition apparatus can compare the height of the wave of the susceptor region corresponding to one rotation cycle of the susceptor.

The control method of the substrate deposition apparatus may determine whether the susceptor is wobbling according to a comparison result of a height of a wave of the susceptor region within one rotation cycle of the susceptor.

The control method of the substrate deposition apparatus may further include a step of controlling the substrate deposition apparatus such that the height of the wave of the susceptor region is gradually lowered as a result of a comparison of the height of the wave of the susceptor region within one rotation cycle of the susceptor, It can be judged that it has occurred.

A control apparatus and a control method thereof for a substrate deposition apparatus according to the present invention detect a temperature of a substrate and a susceptor by using a temperature sensing apparatus such as a pyrometer which senses a temperature of a substrate in a substrate deposition apparatus, It is possible to determine the overall driving state of the susceptor, thereby reducing the manufacturing cost of the substrate deposition apparatus and simplifying the configuration.

1 is a view showing a substrate deposition apparatus according to the present embodiment.
2 is a view showing a control apparatus of the substrate deposition apparatus according to the present embodiment.
3 is a flowchart for explaining a control method of the substrate deposition apparatus according to the present embodiment.
4 is a plan view schematically showing a driving state of a susceptor on which a substrate is supported.
5 is a view for explaining a state in which the driving state of the susceptor is favorable.
6 is a graph showing a temperature waveform in which the driving state of the susceptor is favorable.
7 is a view for explaining a state where W and B are generated in the susceptor.
8 is a graph showing a temperature waveform in a state where W and B are generated in the susceptor.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a control apparatus and a control method thereof for a substrate deposition apparatus according to the present invention will be described with reference to the drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, To be fully informed.

Hereinafter, a substrate deposition apparatus according to the present embodiment will be described with reference to the accompanying drawings.

1 is a view showing a substrate deposition apparatus according to the present embodiment.

Referring to FIG. 1, a substrate deposition apparatus according to an embodiment of the present invention may include a chamber 110, a gas supply unit 120, a susceptor 130, and a temperature sensing unit 210.

Inside the chamber 110, a space may be formed in which a deposition process is performed on the substrate.

The gas supply unit 120 may be disposed at an upper portion of the chamber 110. The gas supply unit 120 may be integrated with a lid for opening and closing the inside of the chamber 110. The gas supply part 120 injects the process gas into the chamber 110. The gas supply unit 120 is provided in the form of a shower head including a first process gas flow path 121, a second process gas flow path 122, a purge gas flow path 123 and a cooling flow path 124 .

The first process gas flow path 121 and the second process gas flow path 122 may have independent flow paths. This is a structure for preventing the first process gas and the second process gas from mixing. The purge gas flow path 123 may be formed at the edge of the gas supply part 120. The purge gas prevents the process gases supplied into the chamber 110 from being directed to the inner wall of the chamber 110 to prevent particles from depositing on the inner wall of the chamber 110. The cooling flow path 124 may be disposed below the first process gas flow path 121 and the second process gas flow path 122. Accordingly, the first process gas and the second process gas can be supplied to the interior of the chamber 110 across the cooling channel 124. Since the coolant flows through the cooling channel 124, the lower surface of the gas supply unit 120 can be cooled. This is a structure for preventing the reaction of the process gas from occurring on the lower surface of the gas supply part 120.

The susceptor 130 is disposed below the gas supply unit 120. A plurality of pockets 131 may be formed on the upper surface of the susceptor 130. The substrates 10 can be respectively seated inside the plurality of pockets 131. The substrate 10 may be one capable of performing an epitaxial process such as gallium nitride, sapphire, or the like. A rotating shaft may be installed below the susceptor 130. A motor may be connected to the lower end of the rotating shaft of the susceptor 130 extending to the outside of the chamber 110. Accordingly, the susceptor 130 can be rotated by the motor and the rotating shaft during the process.

The susceptor 130 may be provided with a heater 133 for heating the susceptor 130 to adjust the temperature of the substrate 10. The plurality of heaters 133 may be provided so that individual temperatures can be controlled for each region of the susceptor 130. Each of the heaters 133 can heat the substrate 10 placed on the susceptor 130 to 600 ° C to 1,300 ° C. The heater 133 may be a tungsten heater or a radio frequency heater.

A partition wall 132 extending to the bottom of the chamber 110 may be disposed on the side of the susceptor 130. A 'J' type liner 140 may be provided between the partition 132 and the inner wall of the chamber 110. The liner 140 prevents vortices from being generated inside the chamber 110. Therefore, waste gas in the chamber 110 can be smoothly discharged, and particles can be prevented from being deposited on the inner wall of the chamber 110 and the partition wall 132. The liner 140 may be made of quartz. In this embodiment, the user can select whether to use the liner 140 or not.

In the lower portion of the chamber 110, an exhaust hole 111 through which waste gas and particles remaining after the process are discharged may be formed. Therefore, waste gas and particles remaining after the process can be guided by the liner 140 and discharged to the exhaust hole 111. A pump (not shown) and a gas scrubber (not shown) for purifying the exhaust gas may be installed in the exhaust hole 111.

On the other hand, the temperature sensing unit 210 may be disposed outside the chamber 110. The temperature sensing unit 210 measures the temperature of the substrate 10 and the susceptor 130 in the chamber 110. As the temperature sensing unit 210, a non-contact thermometer for sensing the temperature optically may be used. The sensing port 211 may be installed in the gas supply unit 120 so that the temperature sensing unit 210 can measure the temperature of the substrate 10 or the susceptor 130 outside the process space.

2 is a view showing a control apparatus of the substrate deposition apparatus according to the present embodiment.

2, the controller of the substrate deposition apparatus according to an embodiment of the present invention includes a waveform derivation unit 220, a region separation unit 230, a rotation period detection unit 240, a rotation speed detection unit 250, Unit 260, and a determination unit 270. [0035]

The waveform derivation unit 220 can derive the temperature sensed by the temperature sensing unit 210 as the temperature waveform of the amount of change over time. That is, the temperature sensing unit 210 irradiates light of a predetermined wavelength toward the susceptor 130, and as the susceptor 130 rotates, light reflected from the susceptor 130 and the substrate 10 is continuously May be sensed by the temperature sensing unit 210. In this way, the waveform derivation unit 220 numerically calculates the temperature of the susceptor 130 sensed by the temperature sensing unit 210 and the temperature of the substrate 10 in units such as Celsius, and outputs the calculated result as a variation with time As shown in Fig.

The region separation unit 230 can separate the susceptor region and the substrate region from the temperature waveform derived by the waveform derivation unit 220. That is, the region separator 230 separates the region of the relatively high temperature waveform into the susceptor region, and separates the region of the temperature waveform that is lower than the susceptor region into the substrate region. The region separator 230 can separate the susceptor region and the substrate region in a predetermined temperature range, or separate the susceptor region and the substrate region in units of a predetermined rotation angle. Thus, the region separator 230 can accurately distinguish the temperature of the susceptor region from the temperature of the substrate region.

The rotation period detecting unit 240 can detect the one rotation period of the susceptor 130 according to the number of the substrates 10 supported by the susceptor 130 or the number of the pockets 131 formed in the susceptor 130 have. For example, if six pockets 131 are formed in the susceptor 130 and the substrate 10 is supported in each pocket 131, the substrate region or the susceptor region may be six in the temperature waveform. Therefore, the rotation period detecting unit 240 can detect a period of the temperature waveform in which the substrate region or the susceptor region is six in each rotation cycle of the susceptor 130.

The rotation speed detector 250 can detect the rotation speed of the susceptor 130 based on one rotation period of the susceptor 130 detected by the rotation period detector 240. [

The peak comparator 260 can compare the heights of the susceptor regions corresponding to one rotation cycle of the susceptor 130. That is, if six pockets 131 are formed on the susceptor 130 and the substrate 10 is supported on the pockets 131 as in the above-described example, six pockets 131 are formed in one cycle of the susceptor 130 A susceptor region may appear. The peak comparator 260 can compare the heights of the six susceptor regions.

The determination unit 270 compares the rotation speed of the susceptor 130 detected by the rotation speed detection unit 250 with the rotation speed of the susceptor areas within one rotation cycle of the susceptor 130, The driving state of the susceptor 130 can be determined using the height comparison result.

That is, the determination unit 260 can determine that the rotation speed of the susceptor detected by the rotation speed detection unit 250 is faster or slower than the predetermined rotation speed. When the susceptor regions are gradually increased or decreased as a result of a comparison of the height of the susceptor regions within one rotation cycle of the susceptor 130 compared by the wave height comparator 260, ) And blinking of the blinking blink occurs.

Hereinafter, a control method of the substrate deposition apparatus according to the present embodiment will be described.

3 is a flowchart for explaining a control method of the substrate deposition apparatus according to the present embodiment.

3, the control method of the substrate deposition apparatus according to the embodiment of the present invention includes a process starting step S11, a temperature sensing step S13, a waveform deriving step S15, a region separation step S17, And a surface state determination step S19.

In the process start step S11, the substrate is placed on the susceptor 130 inside the chamber 110, the substrate 10 is heated, the susceptor 130 is rotated, and the process gas is supplied into the chamber 110, (10) is started. The temperature sensing step S13 is a step in which the temperature of the susceptor 130 and the temperature of the substrate 10 are sensed by the temperature sensing unit 210 disposed on the upper side of the susceptor 130. [ The waveform derivation step S15 is a step in which the temperature sensed by the temperature sensing unit 210 is derived as the temperature waveform of the amount of change over time. The region separation step S17 is a step of separating the susceptor region corresponding to the temperature of the susceptor 130 and the substrate region corresponding to the temperature of the substrate 10 according to the temperature waveform. The susceptor driving state determination step S19 is a step of determining the driving state of the susceptor 130 according to the temperature waveform of the susceptor area.

FIG. 4 is a plan view schematically showing the driving state of the susceptor in which the substrate is supported, FIG. 5 is a view for explaining a state in which the susceptor is in a favorable driving state, and FIG. Fig.

Hereinafter, for convenience of explanation and understanding, an example will be described in which six pockets 131 are formed as shown in FIG. 4, and the substrates 10 are accommodated in the respective pockets 131.

4 and 6, the substrate 10 is accommodated in each of the six pockets 131, and the temperature of the six substrates 10 is detected by the temperature sensing unit 210, The temperature of the surface of the susceptor 130 between the electrodes 131 can be sensed. The waveform derivation unit 220 derives the measured temperatures as a temperature waveform as shown in FIG. The region separation unit 230 separates the region having a relatively high temperature into the susceptor region B and the region having a temperature lower than the susceptor region B into the substrate region A. [

At this time, six susceptor regions B and six substrate regions A may appear when the susceptor 130 makes one rotation. The rotation period detection unit 240 detects the rotation of the susceptor from the first detected susceptor region B or the substrate region A to the sixth susceptor region B and the region including the six substrate regions A, . The rotation speed detector 250 can detect the rotation speed of the susceptor 130 on the basis of one rotation cycle of the susceptor 130. [

The determination unit 270 compares the rotation speed of the susceptor 130 detected by the rotation speed detection unit 250 with a predetermined rotation speed to determine whether the rotational speed of the susceptor 130 is normal or not.

In addition, if the susceptor 130 is normally rotated in a flat posture, the six susceptor regions B may be substantially uniform in height as shown in FIG. Therefore, the determination unit 270 can determine that the susceptor 130 is normally rotated in a normal manner.

Fig. 7 is a view for explaining a state in which W and bling are generated in a susceptor, and Fig. 8 is a graph showing a temperature waveform in a state where W and Bling are generated in a susceptor.

Referring to FIGS. 7 and 8, when W and B are generated in the susceptor 130, the surface of the susceptor 130 can be inclined. Therefore, the reflection angle of the light reflected from the susceptor 130 can be changed according to the inclination of the susceptor 130. That is, the distance or reaching time of the light reflected from the susceptor 130 to the temperature sensing unit 210 varies, and the light intensity or amount of light sensed by the temperature sensing unit 210 gradually decreases or decreases Can be increased.

If the temperature waveform of the susceptor region A gradually decreases or gradually decreases as time elapses, the determination unit 270 determines that blushing has occurred in the susceptor 130, The control unit can stop the process.

The embodiments of the present invention described above and shown in the drawings should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art will be able to modify the technical idea of the present invention in various forms. Accordingly, such improvements and modifications will fall within the scope of the present invention as long as they are obvious to those skilled in the art.

A: substrate region B: susceptor region
10: substrate
110: chamber 120: gas supply part
121: First process gas flow path 122: Second process gas flow path
123: purge gas flow path 124: cooling flow path
130: susceptor 131: pocket
132: partition wall 140: liner
210: temperature sensing unit 211: sensing port
220: waveform derivation unit 230: region separation unit
240: rotation period detection unit 250: rotation speed detection unit
260: Peak comparison unit 270:

Claims (12)

A temperature sensing unit for sensing a temperature of the susceptor disposed inside the chamber;
A waveform derivation unit for deriving a temperature of the susceptor sensed by the temperature sensing unit as a temperature waveform of a variation over time;
And a determiner for determining a rotational driving state of the susceptor according to a temperature waveform of the susceptor.
The method according to claim 1,
The temperature sensing unit senses the temperature of the substrate supported by the susceptor,
Further comprising a region separator for separating the substrate into a susceptor region corresponding to the temperature of the susceptor and a substrate region corresponding to the temperature of the substrate according to the temperature waveform.
3. The method of claim 2,
Wherein the region separator separates a region of a relatively high temperature waveform into the susceptor region and separates a region of a temperature waveform lower than the susceptor region into the substrate region, Device.
3. The method of claim 2,
A rotation cycle detector for detecting one rotation cycle of the susceptor based on the number of the substrate regions or the susceptor regions;
And a rotation speed detector for detecting a rotation speed of the susceptor using one rotation period of the susceptor detected by the rotation period detector.
5. The method of claim 4,
And a wave comparing section for comparing the wave height of the susceptor region corresponding to one rotation cycle of the susceptor,
Wherein the judging unit judges whether the susceptor is wobbled according to a comparison result of a height of a wave of the susceptor area within one rotation cycle of the susceptor.
A process start step in which a substrate is placed on a susceptor inside the chamber, the susceptor is rotated, and a process gas is supplied into the chamber to start the deposition process on the substrate;
A temperature sensing step of sensing a temperature of the susceptor by a temperature sensing unit;
A waveform derivation step of deriving the temperature of the susceptor sensed by the temperature sensing unit as a temperature waveform of a variation over time;
And determining a susceptor driving state of the susceptor based on a temperature waveform of the susceptor.
The method according to claim 6,
The temperature sensing unit senses the temperature of the substrate together,
And separating a region having a relatively high temperature waveform into a susceptor region and separating a region having a temperature waveform lower than the susceptor region into a substrate region in the entire temperature waveform, Wherein the substrate is a substrate.
8. The method of claim 7,
Wherein the one rotation period of the susceptor is detected based on the number of the substrate regions or the susceptor regions.
9. The method of claim 8,
Wherein the rotating speed of the susceptor is detected using one rotation cycle of the susceptor.
9. The method of claim 8,
And comparing a height of a wave of the susceptor region corresponding to one rotation cycle of the susceptor.
11. The method of claim 10,
Wherein a determination is made as to whether or not the susceptor is wobbled according to a comparison result of a height of a wave of the susceptor region within one rotation cycle of the susceptor.
The plasma processing apparatus according to claim 11, wherein when the height of the wave of the susceptor region is gradually lowered or becomes higher as a result of a comparison of heights of the waves in the susceptor region within one rotation cycle of the susceptor, And a control unit for controlling the substrate deposition apparatus.

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