CN103907409B - 热沉附着模块 - Google Patents

热沉附着模块 Download PDF

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CN103907409B
CN103907409B CN201280052701.9A CN201280052701A CN103907409B CN 103907409 B CN103907409 B CN 103907409B CN 201280052701 A CN201280052701 A CN 201280052701A CN 103907409 B CN103907409 B CN 103907409B
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chip
substrate
load block
thickness
chip encapsulating
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CN103907409A (zh
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E·G·科尔根
M·A·盖内斯
J·A·奇茨
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International Business Machines Corp
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Abstract

一种芯片封装设备包括：衬底；负载框，其通过粘合材料而被附着到所述衬底，所述负载框被形成为界定出孔；以及半导体芯片，其在所述孔内被安装在所述衬底上。将所述负载框与所述衬底之间的所述粘合材料的厚度变化和调整为：使得所述负载框的与所述衬底相对的表面被设置为基本上平行于所述芯片的与所述衬底相对的表面。

Description

热沉附着模块
技术领域
本发明涉及热沉附着(heatsink attachment)模块，并且更具体地，涉及直接热沉附着模块的热界面材料(TIM)间隙控制。
背景技术
在半导体芯片的封装中，典型地使用有机衬底。有机衬底将典型地为0.15到0.2mm的精细间距——硅管芯上的受控塌陷芯片连接(C4)焊料凸起(bump)扇出到典型地为1.0到1.2mm的较大间距——球栅阵列(BGA)或者岸面格栅阵列(land grid array)连接。对于BGA，通过焊球的回流形成永久连接来将芯片封装体附着到印刷电路板。LGA型插件提供这样的连接：在该连接处，芯片封装体可以容易地在印刷电路板(PCB)上移走并且被替代。
通常，对于有机封装衬底，将由诸如铜的导热材料形成的盖附着到芯片和有机衬底，以便在操纵(handling)期间保护芯片并且为有机衬底增加机械强度。热界面材料(TIM)材料被分配在芯片的背面与所述盖之间，以便为热耗散提供热路径。如果需要，然后使用第二TIM层将热沉附着到所述盖的外表面。所述芯片面向下或者器件侧向下地安装在封装衬底上。当与LGA插件(其中压力负载穿过芯片)一起使用时，需要LGA和PCB用于电接触，在芯片上方的中心处或者在周界的两个或更多点处将负载施加到封装盖。由于有机衬底、芯片和所述盖之间的热膨胀系数差异，可能需要独特的组装方法来进行上述操作。
对于陶瓷衬底上的多芯片模块(MCM)，为了改善热性能，常常期望定制所述盖，以便可以与芯片倾斜或高度变化无关地在多个芯片上提供薄的均匀TIM层。实现这一点的先前方法涉及通过将垫片(shim)放置在芯片上并且对焊料进行回流以将圆柱形保持元件固定到开口的内表面和边缘，来定制所述保持元件的位置。当使用盖时，用于芯片的冷却路径包括两个TIM层，一个在所述盖的芯片侧，第二个在所述盖与热沉之间。对于一些应用，这可能是不可接受的限制。
对于高性能计算，由于通过按比例缩小尺寸来进一步提高器件性能变得越来越困难，已经对各种类型的芯片堆叠进行了大量的开发工作。在一些芯片堆叠中，芯片被减薄以使得能够制造精细间距穿硅过孔(TSV)，所述TSV可降低芯片的机械强度，因此，理想的是不向穿过芯片堆叠的LGA提供驱动负载，随着衬底尺寸增加并且因此所需的负载增加，尤其如此。对于具有高功率密度的应用，或者需要低结操作温度的应用，可能需要将热沉直接附着到芯片或芯片堆叠背面的封装解决方案。在芯片或芯片堆叠与热沉之间仅单个TIM的使用层导致与需要两个TIM层的加盖芯片封装相比，热性能得到改善。这典型地被称为无盖或者直接热沉附着封装。对于高性能系统，通常期望使用LGA芯片封装而不是BGA芯片封装，以便在必要时能够更换芯片。随着芯片复杂性增加并且功率和输入/输出(I/O)需求增长，封装体的尺寸总体上增加以提供更大量的LGA接触。对于穿过芯片、衬底或者衬底与顶面加强件(stiffener)的组合而提供LGA驱动负载的无盖封装，需要提供足够的机械刚性来以足够的均匀性遍及LGA插件分布负载，以便为所有衬垫(pad)形成电接触。对于有机衬底，这有可能限制可允许的衬底尺寸，对于陶瓷衬底，这有可能增加所需的厚度。当向衬底提供LGA驱动负载时，可以将具有用于芯片的开口的负载框(load frame)(或者加强件)附着到衬底，并且组合后的结构需要提供充足的机械刚度(mechanical stiffness)来均匀地驱动LGA。这种负载框或加强件将被附着到衬底。
发明内容
根据本发明的一方面，一种芯片封装设备包括：衬底；负载框，其通过粘合材料而被附着到所述衬底，所述负载框被形成为界定出孔(aperture)；以及半导体芯片，其在所述孔内被安装在所述衬底上。将所述负载框与所述衬底之间的所述粘合材料的厚度变化和调整为：使得所述负载框的与所述衬底相对的表面被设置为基本上平行于所述芯片的与所述衬底相对的表面。
根据本发明的另一方面，提供了一种芯片封装设备，其包括：衬底；负载框，其通过粘合材料而被附着到所述衬底，所述负载框被形成为界定出孔；以及半导体芯片，其在所述孔内被安装在所述衬底上。将所述负载框与所述衬底之间的所述粘合材料的厚度变化和调整为：使得所述负载框的与所述衬底相对的表面被设置为基本上平行于所述芯片的与所述衬底相对的表面，并且所述芯片的所述表面在所述负载框的所述表面下方偏移。
根据本发明的又一方面，提供了一种用于芯片封装设备的热沉附着模块的组装方法。所述方法包括：将半导体芯片附着于衬底以形成模块子组件；将负载框和垫片放置在固定装置(fixture)中；向所述负载框分配粘合剂；将所述模块子组件以芯片面向下的方式可加载地(loadably)放置在所述固定装置中；以及固化所述粘合剂。
通过本发明的技术实现另外的特征和优点。本申请中详细描述了本发明的其它实施例和方面，这些实施例和方面被认为是所要求保护的发明的一部分。为了更好地理解本发明的优点和特征，参考说明书和附图。
附图说明
在说明书的结论处的权利要求中具体指出并且清楚地要求保护被认为是本发明的主题。从以下结合附图给出的详细描述，本发明的前述及其它特征和优点是显而易见的，在附图中：
图1是示出热沉附着模块的组装方法的流程图；
图2是安装在衬底上的芯片的透视图；
图3是模块被组装到其上的固定装置的透视图；
图4是垫片和负载环(load ring)就位的所述固定装置的透视图；
图5是在已经将粘合材料分配到所述负载环上之后的固定装置的透视图；
图6是在已经添加了附着有芯片的衬底之后的所述固定装置的透视图；
图7是在已经添加了负载板(load plate)之后的所述固定装置的透视图；
图8是加载后的固定装置的横截面图；
图9是完成的模块的透视图；并且
图10是在施加有TIM层的平坦热沉表面上的完成的模块的横截面图。
具体实施方式
公开了一种热沉附着模块，并且该热沉附着模块提供附着到第一层级(level)封装衬底(有机的或陶瓷的)的负载框，其中所述负载框的顶面被设置为与芯片背面平行并且在芯片背面上方垂直偏移一受控距离。
参考图1和2，示例出了用于形成热沉附着模块的第一操作(操作1)，该第一操作包括将诸如微处理器的芯片10附着到衬底20或者载体。通过两阶段方法完成该操作。在第一阶段中，在芯片有源表面11上对诸如精细间距焊球的受控塌陷芯片连接(C4)进行回流，以便将芯片10连接到衬底20上的一组匹配的衬垫。在第二阶段中，使用例如聚合物材料的适当的底部填充材料，进行芯片10的底部填充。这形成了模块子组件(MSA)30。
参考图3，提供固定装置40。固定装置40包括基本上平坦的上表面50，内部对准销60和外部对准销70从该上表面50延伸。内部对准销60具有第一长度并且被设置为定位负载框(在下文中描述)和MSA 30。外部对准销70具有第二长度并且被设置为将负载板(在下文中描述)放置在MSA 30的中心上。内部对准销60还包括至少一个定位销61，所述定位销61被设置为定位至少所述负载框，如下文所述。
参考图1和4，在所述方法的接下来的操作(操作2)中，将垫片80和负载框90放置在固定装置40中。在MSA 30被如下所述地放置之后芯片10将处于的位置下方的位置处，垫片80被放置在上表面50的内部区域中。负载框90安装(fit)在内部对准销60内并且包括与定位销61邻接的拐角部91。负载框90包括基本上平坦并且基本上平行的主表面92(即，顶面)和93(即，底面)。
内部对准销60被设计和定位成准确地定位负载板。定位销61被设置在拐角位置并且被提供用来防止负载框90或MSA 30的意外旋转。
参考图1、5和6，将聚合物粘合剂100分配在负载框90上(操作3)。聚合物粘合剂100可以包括一种或多种适当的粘合剂，所述粘合剂包括但不限于例如Sylgard 577或EA6700。根据各实施例，聚合物粘合剂100的珠状物被分配在负载框90上并且一旦组装就润湿两个配套表面。如图6所示，然后通过固定装置40将MSA 30以芯片10侧向下的方式与负载框90对准并且压在垫片80上(操作4)。
参考图1、7和8，然后将负载板110与固定装置40对准并且放置在其上(操作5)。负载板110与固定装置40之间的对准至少由外部对准销70提供，外部对准销70延伸穿过在负载板110中限定的对应孔。当以这种方式将负载板110放置在固定装置40上时，负载板110在芯片10的中心后面对衬底20提供压力(compressive force)。如图8所示，负载板110包括圆拐角部分111，其从负载板110的下表面向下凸出并且可以位于芯片10的中心后面。由此圆部分111从负载板110向下凸出，并且以如下方式将芯片10压向衬底20：基本上确保MSA 30与负载框90对准并且MSA30被压在垫片80上。
参考图1和9，进行热固化操作(操作6)以在例如炉或烤箱中固化聚合物粘合剂100。在冷却之后，从固定装置40移除完成的模块120，如图9所示。从固定装置40移除完成的模块120导致负载框90附着到衬底20，使得负载框90的主表面92(即，暴露的顶面)被设置为基本上平行于芯片10的背面，并且使得主表面92的平面与芯片10的背面的平面垂直偏移一距离，该距离基本上等于垫片80的厚度。根据各实施例，密封带(即，聚合物粘合剂100)的标称厚度加上负载框90的厚度可以基本上等于衬底20上方的芯片10或芯片堆叠的高度加上垫片80的厚度。
参考图10的完成的模块120的横截面图，示出了C4凸起(bump)121(即，微焊料凸起)和底部填充材料122被设置在芯片10与衬底20之间。对于陶瓷衬底20，典型粘合密封带厚度为约80-100微米，对于有机衬底20，典型粘合密封带厚度为约180-200微米。在图10中，密封带厚度被标记为T1和T2。对于两种衬底材料，最小可接受密封带厚度都为约10微米。
在将芯片10接合到衬底20之后，最大典型芯片倾斜值为约0.1°，其中这是由衬底20的表面形成的平面与芯片10背(非有源)表面之间的角度。为了实现最佳可能热性能，可能需要建立薄且均匀的TIM层。对于无盖模块，如果使用与衬底20平行而不是与芯片10平行的负载框/加强件90并且热沉130与其平行，则对于沿着对角线有0.1°的芯片倾斜的25x 30mm芯片(对角线尺寸约39mm)，两个对角线芯片角之间的高度差将为约39mm×tan(0.1°)＝68微米。典型的TIM接合线可以仅为20-30微米，因此这样的倾斜可能显著增加从芯片10到热沉的热阻。
参考图10，密封带厚度差T2–T1等于D的值乘以tan(θ)，D为衬底20的宽度。如上所述，对于陶瓷衬底20，典型密封带厚度为约100微米，并且最小可接受厚度为约10微米，因此典型厚度的可允许减小为约90微米。如果我们假设密封带厚度也可以在典型值上增加90微米到总共190微米，其中最大芯片10倾斜为θ＝0.1°，则D的对应值将为约103mm。如果这是方形衬底的对角线，则每条边的长度将为约73mm。典型的陶瓷单芯片或者双芯片模块在一侧为约50mm，因此在以上假设的情况下，该结构可以应用于大部分陶瓷单芯片或双芯片模块设计。在其中标称密封带厚度较大的有机衬底20的情况下，该结构可以应用于甚至更大的衬底尺寸，假设大约为400微米的最大密封带厚度不限制。如较早所述的，在芯片的背面与热沉130的平坦表面之间的TIM层140的厚度将基本上等于在组装时使用的垫片80的厚度并且遍及芯片10的表面是基本均匀的。热沉130的平坦表面可以用于将LGA驱动负载施加到负载框90，以便通过LGA插件将完成的模块120电连接到印刷电路板。
本文中所用的术语，仅仅是为了描述特定的实施例，而不意图限定本发明。本文中所用的单数形式的“一”和“该”，旨在也包括复数形式，除非上下文中明确地另行指出。还要知道，“包含”一词在本说明书中使用时，说明存在所指出的特征、整体、步骤、操作、单元和/或组件，但是并不排除存在或增加一个或多个其它特征、整体、步骤、操作、单元和/或组件，以及/或者它们的组合。
以下的权利要求中的对应结构、材料、操作以及所有功能性限定的装置(means)或步骤的等同替换，旨在包括任何用于与在权利要求中具体指出的其它单元相组合地执行该功能的结构、材料或操作。所给出的对本发明的描述其目的在于示意和描述，并非是穷尽性的，也并非是要把本发明限定到所表述的形式。对于所属技术领域的普通技术人员来说，在不偏离本发明范围和精神的情况下，显然可以作出许多修改和变型。对实施例的选择和说明，是为了最好地解释本发明的原理和实际应用，使所属技术领域的普通技术人员能够明了，本发明可以有适合所要的特定用途的具有各种改变的各种实施方式。
本申请中描绘的流程图仅仅是一个例子。在不脱离本发明的精神的情况下，可以存在该流程图或其中描述的步骤(或操作)的很多变型。例如，所述步骤可以以不同的顺序进行，或者可以添加、删除或修改步骤。所有这些变型都被认为是所要求保护的发明的一部分。
尽管已经描述了本发明的优选实施例，但是应当理解，现在以及将来，本领域技术人员可以进行落入后附权利要求的范围内的各种改进和增强。这些权利要求应当被解释为保持对被首次描述的本发明的适当保护。

Claims (20)

1.一种芯片封装设备，包括：
衬底；
负载框，其通过粘合材料而被附着到所述衬底，所述负载框被形成为界定出孔；以及
半导体芯片，其在所述孔内被安装在所述衬底上；
所述负载框与所述衬底之间的所述粘合材料的厚度被变化和调整为：使得所述负载框的与所述衬底相对的表面被设置为基本上平行于所述芯片的与所述衬底相对的表面。
2.根据权利要求1所述的芯片封装设备，其中，所述粘合材料包括聚合物材料。
3.根据权利要求1所述的芯片封装设备，其中，所述粘合材料的厚度为10-400微米。
4.根据权利要求1所述的芯片封装设备，其中，所述粘合材料的厚度为10-190微米。
5.根据权利要求4所述的芯片封装设备，其中，所述衬底包括陶瓷材料。
6.根据权利要求3所述的芯片封装设备，其中，所述衬底包括有机材料。
7.根据权利要求1所述的芯片封装设备，其中，所述芯片的与所述衬底相对的表面从所述负载框的所述表面偏移。
8.根据权利要求7所述的芯片封装设备，还包括：
热沉，其被设置在所述芯片上方；以及
热界面材料(TIM)，其被夹置在所述热沉与所述芯片之间。
9.根据权利要求8所述的芯片封装设备，其中，所述热界面材料的厚度是基本上均匀的。
10.根据权利要求8所述的芯片封装设备，其中，所述热界面材料的厚度近似等于所述偏移。
11.一种芯片封装设备，包括：
衬底；
负载框，其通过粘合材料而被附着到所述衬底，所述负载框被形成为界定出孔；以及
半导体芯片，其在所述孔内被安装在所述衬底上，其中：
所述负载框与所述衬底之间的所述粘合材料的厚度被变化和调整为：使得所述负载框的与所述衬底相对的表面被设置为基本上平行于所述芯片的与所述衬底相对的表面，并且
所述芯片的所述表面在所述负载框的所述表面下方偏移。
12.根据权利要求11所述的芯片封装设备，其中，所述粘合材料包括聚合物材料。
13.根据权利要求11所述的芯片封装设备，其中，所述粘合材料的厚度为10-400微米。
14.根据权利要求11所述的芯片封装设备，其中，所述粘合材料的厚度为10-190微米。
15.根据权利要求14所述的芯片封装设备，其中，所述衬底包括陶瓷材料。
16.根据权利要求14所述的芯片封装设备，其中，所述衬底包括有机材料。
17.根据权利要求11所述的芯片封装设备，还包括：
热沉，其被设置在所述芯片上方；以及
热界面材料(TIM)，其被夹置在所述热沉与所述芯片之间。
18.根据权利要求17所述的芯片封装设备，其中，所述热界面材料的厚度是基本上均匀的。
19.根据权利要求17所述的芯片封装设备，其中，所述热界面材料的厚度近似等于所述偏移。
20.一种用于芯片封装设备的热沉附着模块的组装方法，所述方法包括：
将半导体芯片附着于衬底以形成模块子组件；
将负载框和垫片放置在固定装置中；
向所述负载框分配粘合剂；
将所述模块子组件以芯片面向下的方式可加载地放置在所述固定装置中；以及
固化所述粘合剂，
其中，所述可加载地放置包括用负载板加载所述模块子组件，其中所述负载板具有凸出到所述芯片的中心中的圆部分。
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US8823164B2 (en) 2014-09-02
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DE112012004476B4 (de) 2019-08-29

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