CN103903951A - Plasma system feedback control method and plasma system - Google Patents
Plasma system feedback control method and plasma system Download PDFInfo
- Publication number
- CN103903951A CN103903951A CN201210585488.XA CN201210585488A CN103903951A CN 103903951 A CN103903951 A CN 103903951A CN 201210585488 A CN201210585488 A CN 201210585488A CN 103903951 A CN103903951 A CN 103903951A
- Authority
- CN
- China
- Prior art keywords
- plasma
- spectrum
- control
- order
- generation chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Provided are a plasma system feedback control method and a plasma system. The plasma system comprises a plasma generating chamber, a light sensor, an operation module and a control module. The control module has a standard spectrum database including a variety of plasma standard spectrums corresponding to different plasma process conditions. The light sensor detects light emitted when a plasma is generated through gas ionization in the plasma generating chamber, the light is converted to obtain a light emitting spectrum, the light emitting spectrum is compared with the plasma standard spectrums of the corresponding plasma process conditions in the standard spectrum database, and the process conditions and parameters of the plasma system are adjusted and controlled in real time based on a comparison result.
Description
Technical field
The present invention relates to a kind of back-feed control method and system thereof of processing procedure, particularly relate to a kind of back-feed control method and system thereof of plasma system.
Background technology
Chemical vapour deposition technique (Chemical vapor deposition, CVD) be the most common coating technique also the most widely using in the photoelectric fields such as semiconductor and liquid crystal display, be that base material is exposed under one or more different predecessors, produce at the surface of base material generation chemical reaction or chemical breakdown the film that wish deposits.And plasma enhanced chemical vapor deposition (Plasma enhanced chemical vapor deposition, PECVD) for utilizing plasma to increase the reaction rate of predecessor, making it be able to carry out plated film under the environment of low temperature, is the most widely used main cause in the field such as semiconductor and liquid crystal display.
But, in the coating technique of opto-electronics now, no matter be gold-tinted processing procedure, deposition manufacture process or plasma process etc., all in real time monitoring program condition to carry out at any time the correction of process parameter, but must on substrate, complete after the film-plating process of part, the plated film result of utilizing Correlated Case with ARMA Measurement apparatus measures to form on substrate, carry out again the correction of process parameter, need be through test and adjustment repeatedly, until produce the result that meets demand, and these processing procedure corrections repeatedly and the process of adjustment, not only expending production cost also allows the overall processing procedure time increase.In addition, even obtained suitable process parameter after adjusting, but still may be because of the drift phenomenon of board in the time that reality is manufactured, make final product still have the situation of the demand of not meeting to occur.
The problem that above-mentioned processing procedure occurs, not only can cause production cost and processing procedure waste of time, also can have a huge impact for the lifting of product yield.Therefore, providing a kind of process conditions of controlling in real time accurately to grasp the method for process results, is the important directions of research and inquirement of the present invention.
Summary of the invention
The object of the present invention is to provide the real-time monitoring program condition of a kind of energy accurately to grasp the back-feed control method of plasma system of process results.
The back-feed control method of plasma system of the present invention, comprises following steps:
(A) set up a plasma system, carry out predetermined plasma process in order to the surface at a substrate, this plasma system has a plasma generation chamber that carries out plasma process, an optical sensor, the light sending from this plasma generation chamber in order to sensing, and convert thereof into the spectrum of giving out light, one in order to control the operational module of process parameter of this plasma system, an and control module that is electrically connected on this optical sensor and this operational module, and this control module has a standard spectrum database, comprise the plasma standard spectrum of multiple corresponding different plasma process conditions.
(B) light sending while utilizing gas ionization in this plasma generation chamber of this light sensors to produce plasma, and be converted to the spectrum of giving out light.
(C) spectrum of giving out light this optical sensor being recorded is sent to this control module, and this spectrum of giving out light is compared with the plasma standard spectrum of corresponding plasma process condition in this standard spectrum database, then from this control module, this operational module is exported to a control signal according to this comparison result.
Preferably, the back-feed control method of plasma system of the present invention, in this step (C), be by the wavelength of plasma standard spectrum corresponding with this this spectrum of giving out light, feature crest integral area, and at least one item of energy intensity is compared.
Preferably, the back-feed control method of plasma system of the present invention, when in this step (C), the comparison result of this give out light spectrum and this plasma standard spectrum is different, the control signal of this control module to a modulation process parameter of this operational module output; And the comparison result of this give out light spectrum and this plasma standard spectrum is when identical, this control module is to a control signal that process parameter is constant of this operational module output.
Preferably, the back-feed control method of plasma system of the present invention, the operational module of this plasma system has a radiofrequency signal generator, one in order to control the matter stream controller of the gas flow that enters this plasma generation chamber, and one in order to control the heat controller of the temperature of this substrate in this plasma generation chamber, and the control module of this step (C) is while exporting the control signal of this modulation process parameter to this operational module, the corresponding power of adjusting this radiofrequency signal generator, the gas flow of this matter stream controller, and at least one item of the heating-up temperature of this heat controller.
Preferably, the back-feed control method of plasma system of the present invention, in this step (B), the light sending when gas ionization in this plasma generation chamber produces plasma is detected in this optical sensor compartment of terrain, and be 1 to 30 second this interval time.
In addition, another object of the present invention is to provide a kind of and can effectively save the plasma system of processing procedure time and cost of manufacture.
Plasma system of the present invention carries out predetermined plasma process in order to the surface at a substrate, comprises a plasma generation chamber, an operational module, an optical sensor, and a control module.
This plasma generation chamber produces plasma in order to the gas of input is ionized.
This operational module is electrically connected with this plasma generation chamber, and in order to control the process parameter of this plasma process, this operational module comprises that one in order to control the radiofrequency signal generator of this ionisation of gas degree, a matter stream controller of inputting this plasma generation chamber in order to control gas, and one in order to control the heat controller of the temperature of this substrate in this plasma generation chamber.
The light that this optical sensor sends while producing plasma in order to gas ionization in this plasma generation chamber of sensing, and be converted into the spectrum of giving out light.
This control module has a standard spectrum database, comprise multiple plasma standard spectrum, this control module is electrically connected on respectively this operational module and this optical sensor, in order to receive the measured spectrum comparing with this plasma standard spectrum of giving out light of this optical sensor, control signal to this operational module with one of correspondence output.
Preferably, plasma system of the present invention, what this optical sensor was measured give out light, and spectrum has wavelength, feature crest integral area, and the analysis data of energy intensity.
Preferably, plasma system of the present invention, this plasma generation chamber comprises a reaction cavity that defines a reaction compartment, a plasma electrode being arranged in this reaction cavity, the electrode feed-in unit being connected with this plasma electrode respectively, a plasma gas input unit, an and heating unit being arranged in this reaction cavity, this electrode feed-in unit is electrically connected with this radiofrequency signal generator, in order to receive a radiofrequency signal, this plasma gas input unit is electrically connected with this matter stream controller, pass into the flow of this reaction cavity in order to adjust this gas, and make this plasma electrode produce an electric field that makes gas ionization, this heating unit is electrically connected with this heat controller and in order to adjust the temperature of this substrate.
Beneficial effect of the present invention is: utilize measured this optical sensor spectrum and this plasma standard spectrum of giving out light compared, the result that recycles this comparison, is controlled and is accurately grasped the result of processing procedure with Real-Time Monitoring and to process conditions and parameter a control signal of this operational module output from this control module.
Accompanying drawing explanation
Fig. 1 is a schematic diagram, and the preferred embodiment of plasma system of the present invention is described;
Fig. 2 is a flow chart, and the preferred embodiment of the back-feed control method of plasma system of the present invention is described.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
Consult Fig. 1, the preferred embodiment of plasma system of the present invention comprises a plasma generation chamber 1, operational module 2, an optical sensor 3, and a control module 4, carry out a predetermined plasma process in order to the surface that is arranged in the substrate 11 of this plasma generation chamber 1 at.
This plasma generation chamber 1 comprises that a reaction cavity that defines a reaction compartment 12, one are arranged at plasma electrode 13 in this reaction cavity 12, the electrode feed-in unit 14, the plasma gas input unit 15 that are connected with this plasma electrode 13 respectively, and a heating unit 16 being arranged in this reaction cavity 12.Via this plasma gas input unit 15, a kind of gas passed into and receive a radiofrequency signal by this electrode feed-in unit 14, make this plasma electrode 13 produce an electric field that makes this gas ionization, this heating unit 16 is in order to adjust and the temperature of controlling this substrate 11.
This operational module 2 is electrically connected with this plasma generation chamber 1 and controls in this plasma generation chamber 1 process parameter of the predetermined plasma process carrying out, this operational module 2 comprises a radiofrequency signal generator 21, a matter stream controller 22, and a heat controller 23.This radiofrequency signal generator 21 is electrically connected with this electrode feed-in unit 14 and in order to adjust electric field strength to control this ionisation of gas degree, this matter stream controller 22 is to be electrically connected with this plasma gas input unit 15, in order to control inputs, to the gas flow in this reaction cavity 12, this heat controller 23 is electrically connected with this heating unit 16 and in order to control the temperature of this substrate 11.
This optical sensor 3 is connected with this plasma generation chamber 1 and can sense gasses ionizes the light sending while producing plasma, and is converted into the spectrum of giving out light.To be gas atom or molecule be promoted to excitation state because of the shock of electronics to the origin cause of formation that plasma is given out light, cause is unsettled in the system of excitation state, the moment that can only be raised at energy exists, therefore can return immediately and there is more low-energy stable state, got back to by excitation state in the process of ground state at the described gas atom being excited or molecule, can get back to excitation state or the ground state that energy is lower to launch a photon form with particular energy, the photon of launching in the atom of different excitation state has different electromagnetic spectrums, and demonstrate separately unique spectral line.This optical sensor 3 is the detecting photon that produces of this plasma and converts thereof into is the spectrum of giving out light, in this preferred embodiment, the measured spectrum of giving out light of this optical sensor 3 has wavelength, feature crest integral area, and the analysis data of energy intensity.
This control module 4 is electrically connected on respectively this operational module 2 and this optical sensor 3, and in order to receive the measured spectrum of giving out light of this optical sensor 3, and exports one and control signal to this operational module 2.
In addition, this plasma system of the present invention monitoring program condition and carry out the feedback control of plasma process parameter in real time, is hereby described as follows the back-feed control method of this plasma system.
Coordinate and consult Fig. 2, specifically, utilize the back-feed control method of the plasma process parameter that the preferred embodiment of this plasma system of the present invention carries out, in actual while carrying out plasma process step, utilize this optical sensor 3 to be detected in real time the light sending when gas ionization in this plasma generation chamber 1 produces plasma, be converted to the spectrum of giving out light, the spectrum of again this being given out light is sent to this control module 4, this control module 4 has a standard spectrum database that comprises the plasma standard spectrum of multiple corresponding different plasma process conditions, this spectrum of giving out light is carried out to wavelength with the plasma standard spectrum of corresponding plasma process condition in this standard spectrum database, feature crest integral area, and the comparison of energy intensity.
When comparison result is consistent, this control module 4 can be exported a control signal that process parameter is constant to this operational module 2, and this optical sensor 3 can carry out the give out light detection of spectrum of plasma at interval of a period of time, allow this control module 4 compare and corresponding output control signal, be 1 to 30 second interval time; When if this is given out light, the comparison result of spectrum and this plasma standard spectrum is different, this control module 4 is exported the control signal of a modulation process parameter to this operational module 2, this control signal can correspondingly be adjusted the power of this radiofrequency signal generator 21, the gas flow of this matter stream controller 22, and one of them of the heating-up temperature of this heat controller 23, until this is given out light, spectrum is consistent with the comparison result of this plasma standard spectrum.
The back-feed control method of plasma system of the present invention is collected multiple process datas by this optical sensor 3, described process data is this plasma system spectroscopic data that institute's sensing obtains under different process parameter conditions, in this preferred embodiment, this spectroscopic data is wavelength, feature crest integral area, and the comparison data of energy intensity, and set up out the standard spectrum database of the plasma standard spectrum of the plasma process condition that multiple correspondence is different, after collection completes, remittance is to this control module 4, and carried out the action of a feedback control by this control module 4, so as to controlling the start of this operational module 2, and the result that makes plasma process meets desired value, not only can obtain in real time the data of processing procedure and take corresponding operating procedure, abnormal or the disappearance occurring in processing procedure is revised at any time, allow process results can accurately meet the desired value setting, more can discover in real time the abnormal of this plasma system or board by described process data, and prevent the infringement of product or board.
Moreover, the present invention is except being applied to thin-film solar cells film-plating process, also can be applied to the low temperature polycrystalline silicon film-plating process of the liquid crystal display with huge commercial market, and plasma technique is also key technology important in manufacture of semiconductor, such as the various fields relevant with plasma technique, all can utilize the disclosed technical method of the present invention to reach the object of optimizing processing procedure control.
In sum, the back-feed control method of plasma system of the present invention is given out light message that spectrum provides to understand the reaction of processing procedure process by diagnosis, and monitor in real time to take corresponding operating procedure, accurately grasped process results and met desired value, to avoid causing production cost and processing procedure waste of time, so really can reach object of the present invention.
Claims (8)
1. a back-feed control method for plasma system, is characterized in that comprising following steps:
Set up a plasma system, carry out predetermined plasma process in order to the surface at a substrate, this plasma system has a plasma generation chamber that carries out plasma process, an optical sensor, the light sending from this plasma generation chamber in order to sensing, one in order to control the operational module of process parameter of this plasma system, an and control module that is electrically connected on this optical sensor and this operational module, this control module has a standard spectrum database, comprise the plasma standard spectrum of multiple corresponding different plasma process conditions,
The light sending when gas ionization produces plasma in this plasma generation chamber of this light sensors, and be converted to the spectrum of giving out light;
The spectrum of giving out light that this optical sensor is recorded is sent to this control module, this control module is compared this spectrum of giving out light with the plasma standard spectrum of corresponding plasma process condition in this standard spectrum database, then from this control module, this operational module is exported to a control signal according to this comparison result.
2. the back-feed control method of plasma system as claimed in claim 1, is characterized in that: the project that this spectrum of giving out light plasma standard spectrum corresponding with this compared is wavelength, feature crest integral area, and at least one in energy intensity.
3. the back-feed control method of plasma system as claimed in claim 2, it is characterized in that: when the comparison result of this give out light spectrum and this plasma standard spectrum is different, this control module can be the control signal of a modulation process parameter to the control signal of this operational module output; And the comparison result of this give out light spectrum and this plasma standard spectrum is when identical, this control module is a control signal that process parameter is constant to the control signal of this operational module output.
4. the back-feed control method of plasma system as claimed in claim 3, it is characterized in that: the operational module of this plasma system has a radiofrequency signal generator, one in order to control the matter stream controller of the gas flow that enters this plasma generation chamber, and one in order to control the heat controller of this substrate temperature in this plasma generation chamber, and this control module is while exporting the control signal of this modulation process parameter to this operational module, the corresponding power of adjusting this radiofrequency signal generator, the gas flow of this matter stream controller, and at least one item of the heating-up temperature of this heat controller.
5. the back-feed control method of plasma system as claimed in claim 4, is characterized in that: the light sending when gas ionization in this plasma generation chamber produces plasma is detected in this optical sensor compartment of terrain, and be 1 to 30 second this interval time.
6. a plasma system, carries out predetermined plasma process in order to the surface at a substrate, and this plasma system is characterised in that and comprises:
A plasma generation chamber, produces plasma in order to input gas is ionized;
An operational module, be electrically connected with this plasma generation chamber, and in order to control the process parameter of this plasma process, this operational module comprises that one in order to control the radiofrequency signal generator of this ionisation of gas degree, a matter stream controller of inputting this plasma generation chamber in order to control gas, and one in order to control the heat controller of the temperature of this substrate in this plasma generation chamber;
An optical sensor, the light sending while producing plasma in order to gas ionization in this plasma generation chamber of sensing, and be converted into the spectrum of giving out light; And
One is electrically connected on respectively the control module of this operational module and this optical sensor, this control module has a standard spectrum database, comprise the plasma standard spectrum of multiple corresponding different plasma process conditions, this control module receive this optical sensor measured give out light spectrum and compare with plasma standard spectrum after, then one of corresponding output controls signal to this operational module.
7. plasma system as claimed in claim 6, is characterized in that: what this optical sensor was measured give out light, and spectrum has wavelength, feature crest integral area, and the analysis data of energy intensity.
8. plasma system as claimed in claim 7, it is characterized in that: this plasma generation chamber comprises a reaction cavity that defines a reaction compartment, a plasma electrode being arranged in this reaction cavity, the electrode feed-in unit being connected with this plasma electrode respectively, a plasma gas input unit, an and heating unit being arranged in this reaction cavity, this electrode feed-in unit is electrically connected with this radiofrequency signal generator, in order to receive a radiofrequency signal, this plasma gas input unit is electrically connected with this matter stream controller, pass into the flow of this reaction cavity in order to adjust this gas, and make this plasma electrode produce an electric field that makes gas ionization, this heating unit is electrically connected with this heat controller and in order to adjust the temperature of this substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210585488.XA CN103903951B (en) | 2012-12-28 | 2012-12-28 | The back-feed control method of plasma system and system thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210585488.XA CN103903951B (en) | 2012-12-28 | 2012-12-28 | The back-feed control method of plasma system and system thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103903951A true CN103903951A (en) | 2014-07-02 |
| CN103903951B CN103903951B (en) | 2016-05-18 |
Family
ID=50995217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210585488.XA Active CN103903951B (en) | 2012-12-28 | 2012-12-28 | The back-feed control method of plasma system and system thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103903951B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110996487A (en) * | 2019-11-08 | 2020-04-10 | 上海工程技术大学 | Plasma jet device and method for controlling power supply through feedback link |
| WO2023286180A1 (en) * | 2021-07-14 | 2023-01-19 | 株式会社日立ハイテク | Plasma processing device, data analysis device, and semiconductor device manufacturing system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200506388A (en) * | 2003-08-14 | 2005-02-16 | Advanced Energy Ind Inc | Sensor array for measuring plasma characteristics in plasma processing environments |
| CN101552183A (en) * | 2008-04-03 | 2009-10-07 | Tes股份有限公司 | Plasma processing apparatus |
-
2012
- 2012-12-28 CN CN201210585488.XA patent/CN103903951B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200506388A (en) * | 2003-08-14 | 2005-02-16 | Advanced Energy Ind Inc | Sensor array for measuring plasma characteristics in plasma processing environments |
| CN101552183A (en) * | 2008-04-03 | 2009-10-07 | Tes股份有限公司 | Plasma processing apparatus |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110996487A (en) * | 2019-11-08 | 2020-04-10 | 上海工程技术大学 | Plasma jet device and method for controlling power supply through feedback link |
| WO2023286180A1 (en) * | 2021-07-14 | 2023-01-19 | 株式会社日立ハイテク | Plasma processing device, data analysis device, and semiconductor device manufacturing system |
| JP7288553B1 (en) * | 2021-07-14 | 2023-06-07 | 株式会社日立ハイテク | Plasma processing equipment, data analysis equipment and semiconductor device manufacturing system |
| TWI844054B (en) * | 2021-07-14 | 2024-06-01 | 日商日立全球先端科技股份有限公司 | Plasma processing equipment, data analysis equipment and semiconductor device manufacturing system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103903951B (en) | 2016-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| D’Amico et al. | Conical forward THz emission from femtosecond-laser-beam filamentation in air | |
| KR101343865B1 (en) | Method and Apparatus for the Detection of Arc Events During the Plasma Processing of a Wafer, Surface of Substrate | |
| JP6165982B2 (en) | Spatially resolved emission spectroscopy in plasma processing | |
| TWI585852B (en) | Plasma processing device and its data analysis device | |
| Clayton et al. | Relativistic plasma-wave excitation by collinear optical mixing | |
| CN106596626A (en) | Method and apparatus for measuring thermal diffusivity of materials through transient fluorescence | |
| US20180012737A1 (en) | Plasma Monitoring Device | |
| JP2016082233A5 (en) | ||
| JP2015029093A5 (en) | ||
| JP5397215B2 (en) | Semiconductor manufacturing apparatus, semiconductor device manufacturing method, simulation apparatus, and simulation program | |
| TW201604955A (en) | Data analysis method for plasma processing apparatus, plasma processing method and plasma processing apparatus | |
| CN103903951A (en) | Plasma system feedback control method and plasma system | |
| CN205546119U (en) | Control system of effective control gaseous phase molecule absorption spectrum appearance light source | |
| CN102184831A (en) | Method using emission spectrum for diagnosing space distribution character of low-pressure plasma torch | |
| TWI474367B (en) | A feedback control method for a plasma system and a plasma system | |
| JP5778893B2 (en) | End point detection apparatus, plasma processing apparatus, and end point detection method | |
| CN108151906A (en) | A kind of method that more absorption lines measure gas temperature | |
| CN106504971B (en) | A kind of plasma etching method and plasma etching device | |
| CN110996487A (en) | Plasma jet device and method for controlling power supply through feedback link | |
| Gu et al. | Communication: Spectroscopic measurement of the binding energy of a carboxylic acid-water dimer | |
| CN102364700B (en) | Solar cell reactive ion etching (RIE) technology temperature compensation method | |
| CN202275052U (en) | On-line trace nitrogen gas detector based on plasma emission spectroscopy | |
| Alvino et al. | Apparatus for the investigation of high-temperature, high-pressure gas-phase heterogeneous catalytic and photo-catalytic materials | |
| GB2599603A (en) | Glow plasma stabilisation | |
| CN210986553U (en) | Plasma jet device for controlling power supply through feedback link |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |