CN103903683A - Anisotropic conductive film and preparation method thereof - Google Patents
Anisotropic conductive film and preparation method thereof Download PDFInfo
- Publication number
- CN103903683A CN103903683A CN201210582322.2A CN201210582322A CN103903683A CN 103903683 A CN103903683 A CN 103903683A CN 201210582322 A CN201210582322 A CN 201210582322A CN 103903683 A CN103903683 A CN 103903683A
- Authority
- CN
- China
- Prior art keywords
- conductive film
- anisotropic conductive
- insulating barrier
- substrate
- insulation glue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
An anisotropic conductive film comprises a substrate, an insulation glue layer formed on one surface of the substrate and a plurality of conductive particles distributed in the insulation glue layer. The conductive particle comprises a spherical base body, a conductive layer coated on the surface of the spherical base body and an insulation layer coated on the surface of the conductive layer. Holes are formed in the insulation layer such that the insulation layer is allowed to form a net structure. When the conductive particles are pressed by external forces, a part of the conductive layer can be exposed from the holes of the insulation layer. The conductive particles of the anisotropic conductive film comprise insulation layers coated on the surfaces of the conductive layers, so that when the anisotropic conductive film is under the action of the external forces, such as trimming, crimping and the like, the transverse short circuit of the anisotropic conductive film due to transverse gathering of the conductive particles is prevented. The invention also provides a method for preparing the anisotropic conductive film.
Description
Technical field
The present invention relates to a kind of conducting film, relate in particular to a kind of anisotropic conductive film and preparation method thereof.
Background technology
Anisotropic conductive film (Anisotropic Conductive Film, ACF) has the characteristic of vertical conducting and lateral isolation, and it is mainly used in the liquid crystal panel that is not suitable for high temperature slicker solder welding processing procedure, for connecting fluid crystal panel and driving chip.Anisotropic conductive film generally comprises a substrate and one and is formed at the insulation glue-line of substrate surface, in insulation glue-line, is distributed with multiple conducting particless.Existing anisotropic conductive film generally will be applied directly on substrate doped with the insulating cement of conducting particles, and therefore, conducting particles is randomly distributed in insulation glue-line, and the density of distribution and the degree of depth are difficult to control.Anisotropic conductive film is in the time the External Force Acting such as cutting, curling, and conducting particles, because be moved by External Force Acting, causes partially conductive particle to pile up, and causes the short circuit between electrodes phenomenon of transverse arrangement of turbo.
Summary of the invention
In view of foregoing, be necessary to provide a kind of and can avoid anisotropic conductive film of horizontal short circuit and preparation method thereof.
A kind of anisotropic conductive film, it comprises substrate, is formed at the insulation glue-line on described substrate one surface and is distributed in the multiple conducting particless in described insulation glue-line, described conducting particles comprises spherical substrate, be coated on the conductive layer on described spherical substrate surface and be coated on the insulating barrier of described conductive layer surface, on described insulating barrier, be formed with hole so that described insulating barrier forms network structure, when described conducting particles is subject to external force extruding, the described conductive layer of part can expose from the hole of described insulating barrier.
A preparation method for anisotropic conductive film, it comprises the following steps:
Prepare conducting particles, described conducting particles comprises spherical substrate, is coated on the conductive layer on described spherical substrate surface and is coated on the cancellated insulating barrier of having of described conductive layer surface;
Insulation glue is provided, mixes described conducting particles and described insulation glue;
A substrate is provided, the above-mentioned insulation glue that is mixed with conducting particles is coated on described substrate; And
Solidify described insulation glue to form insulation glue-line, thereby obtain anisotropic conductive film.
Because comprising, the conducting particles of anisotropic conductive film is coated in the cancellated insulating barrier of having of conductive layer surface, when anisotropic conductive film is cut, when the External Force Acting such as curling, avoid laterally piling up because of conducting particles and caused the horizontal short circuit of anisotropic conductive film; Meanwhile, described insulating barrier can partly expose described conductive layer while being subject to external force extruding, thereby guarantees described anisotropic conductive film vertical conducting.
Accompanying drawing explanation
Fig. 1 is the structural representation of the anisotropic conductive film of embodiment of the present invention.
Fig. 2 is the structural representation of the conducting particles of anisotropic conductive film shown in Fig. 1.
Fig. 3 is the structural representation after conducting particles pressurized shown in Fig. 2.
Fig. 4 is the flow chart of the preparation method of anisotropic conductive film shown in Fig. 1.
Primary clustering symbol description
| Anisotropic |
100 |
| |
10 |
| Insulation glue- |
20 |
| Conducting |
30 |
| |
301 |
| |
303 |
| |
305 |
| |
3051 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Refer to Fig. 1, anisotropic conductive film 100 of the present invention comprises substrate 10, is formed at the insulation glue-line 20 on substrate 10 1 surfaces and is distributed in the multiple conducting particless 30 in insulation glue-line 20, conducting particles 30 comprises spherical substrate 301, be coated on the conductive layer 303 on spherical substrate 301 surfaces and be coated on the insulating barrier 305 on conductive layer 303 surfaces, on insulating barrier 305, be formed with multiple holes 3051 so that insulating barrier 305 forms network structure, when conducting particles 30 is subject to external force extruding, partially conductive layer 303 can expose from the hole of insulating barrier 305 3051.
Insulation glue-line 20 is made up of thermoset resin material.In present embodiment, insulation glue-line 20 is epoxy resin.Conducting particles 30 is uniformly distributed in insulation glue-line 20, and in present embodiment, conducting particles 30 is individual layer and is spaced in insulation glue-line 20.
Please refer to Fig. 2 and Fig. 3, in present embodiment, conducting particles 30 comprises spherical substrate 301, is coated on the conductive layer 303 on spherical substrate 301 surfaces and is formed at the cancellated insulating barrier 305 of having of conductive layer 303 surfaces.The network structure that insulating barrier 305 is made for ceramic material, is formed with a large amount of holes 3051 on insulating barrier 305.Spherical substrate 301 can be made up of resin, glass or ceramic material.Conductive layer 303 can be formed by metals such as nickel, gold, aluminium, copper.Insulating barrier 305 is made up of ceramic material.Insulating barrier 305 can be by silicon dioxide (SiO
2), titanium dioxide (TiO
2), silicon nitride (Si
3n
4) or zirconium dioxide (ZrO
2) etc. ceramic material form.In present embodiment, spherical substrate 301 is made up of resin material, and conductive layer 303 is for to be made up of nickel, and insulating barrier 305 is by silicon dioxide (SiO
2) form, the volume of insulating barrier 305 be spherical substrate 301 volume 0.2 ~ 70%.When conducting particles 30 is subject to external force when extruding, make the conductive layer 303 can be exposed via hole 3051 parts thereby deformation can occur for spherical substrate 301 and insulating barrier 305.
Refer to Fig. 4, the preparation method of the anisotropic conductive film 100 of embodiment of the present invention comprises the following steps:
S201: prepare conducting particles 30, conducting particles 30 comprises spherical substrate 301, is coated on the conductive layer 303 on spherical substrate 301 surfaces and is coated on the cancellated insulating barrier 305 of having of conductive layer 303 surfaces.In present embodiment, the preparation of conducting particles 30 comprises the following steps:
(a) in the spherical substrate 301 of being made by resin material, form conductive layer 303.Conductive layer 303 can be formed by metals such as nickel, gold, aluminium, copper.Conductive layer 303 can or be formed by chemical reduction method via physical method (as coating method).In present embodiment, conductive layer 303 is the metal level forming via chemical reduction method, and reaction condition is: spherical substrate 301 is put into and contained 0.1mol/L gold chloride (HAuCl
4) and the sodium citrate solution of 0.03mol/L in, reaction temperature is controlled in the scope of 110-130 ℃, the reaction time: 30 minutes (min).Form on spherical substrate 301 surfaces the conductive layer 303 that one deck is made of gold by above-mentioned reaction, the thickness of conductive layer 303 is 20 microns to 40 microns.
(b) on conductive layer 303, form and there is cancellated insulating barrier 305.Insulating barrier 305 can be formed by ceramic materials such as silicon dioxide, titanium dioxide, silicon nitride, zirconium dioxides.In embodiment of the present invention, adopt the masterplate method inorganic synthesis mode of arranging in pairs or groups, as sol-gal process (sol-gel method), coprecipitation (co-precipitation) and hydro thermal method (hydrothermal) etc., will there is cancellated ceramic material and be coated on conductive layer 303.Take masterplate method collocation sol-gel process as example, its process is: 1. in isopropyl alcohol, adding mass fraction is that polyethylene glycol oxide-PPOX-polyethylene glycol oxide triblock copolymer compound (PEO5-PPO70PEO5) of 2-5% is as soft masterplate, wherein, polyethylene glycol oxide-PPOX-polyethylene glycol oxide triblock copolymer compound is layered arrangement; 2. adding mass fraction is 15% tetraethoxysilane (Tetraethylorthosilicate, TEOS), mixes rear abundant reaction 1 hour; 3. in nitric acid (HNO3) solution of 1mol/L, carry out pickling, to remove soft masterplate, there is cancellated insulating barrier 305 thereby form, the volume of insulating barrier 305 be spherical substrate 301 volume 0.2 ~ 70%.
S202: insulation glue is provided, and conducting particles 30 is mixed with insulation glue.In present embodiment, insulation glue is epoxy resin solution.
S203 a: substrate 10 is provided, the above-mentioned insulation glue that is mixed with conducting particles 30 is evenly coated on substrate 10.In present embodiment, in present embodiment, substrate 10 is made for PET material, and conducting particles 30 is single layer structure and is spaced on substrate 10.
S204: solidify insulation glue to form insulation glue-line 20, thereby obtain anisotropic conductive film 100.In present embodiment, because epoxy resin is thermosetting resin, adopt hot curing mode cured epoxy resin.
The conducting particles 30 of the anisotropic conductive film 100 of embodiment of the present invention comprises and is coated on the cancellated insulating barrier 305 of having of conductive layer 303 surfaces.When use, the upper and lower surface of anisotropic conductive film 100 is subject to liquid crystal panel and drives the extruding of chip, makes the conductive layer 303 can be exposed via hole 3051 parts, thereby realize vertical conducting thereby there is deformation when base material 3051 is subject to external force extruding; Meanwhile, on the conductive layer 303 because of the lateral part of conducting particles 30, be still coated with the base material 3051 that ceramic material is made, thus the short circuit of having avoided anisotropic conductive film 100 to cause because of the horizontal conducting between conducting particles 30.
In addition, those skilled in the art also can do other and change in spirit of the present invention, and certainly, the variation that these do according to spirit of the present invention, all should be included in the present invention's scope required for protection.
Claims (10)
1. an anisotropic conductive film, it comprises substrate, is formed at the insulation glue-line on described substrate one surface and is distributed in the multiple conducting particless in described insulation glue-line, it is characterized in that: described conducting particles comprises spherical substrate, be coated on the conductive layer on described spherical substrate surface and be coated on the insulating barrier of described conductive layer surface, on described insulating barrier, be formed with multiple holes so that described insulating barrier forms network structure, when described conducting particles is subject to external force extruding, the described conductive layer of part can expose from the hole of described insulating barrier.
2. anisotropic conductive film as claimed in claim 1, is characterized in that: described insulating barrier is made up of ceramic material, and described ceramic material is silicon dioxide, titanium dioxide, silicon nitride or zirconium dioxide.
3. anisotropic conductive film as claimed in claim 1, is characterized in that: 0.2% to 70% of the volume that the volume of described insulating barrier is described spherical substrate.
4. anisotropic conductive film as claimed in claim 3, is characterized in that: described insulating barrier is made up of ceramic material.
5. a preparation method for anisotropic conductive film, it comprises the following steps:
Prepare conducting particles, described conducting particles comprises spherical substrate, is coated on the conductive layer on described spherical substrate surface and is coated on the cancellated insulating barrier of having of described conductive layer surface;
Insulation glue is provided, mixes described conducting particles and described insulation glue;
A substrate is provided, the above-mentioned insulation glue that is mixed with conducting particles is coated on described substrate; And
Solidify described insulation glue to form insulation glue-line, thereby obtain anisotropic conductive film.
6. the preparation method of anisotropic conductive film as claimed in claim 5, is characterized in that: described insulating barrier is made up of ceramic material, and described ceramic material is silicon dioxide, titanium dioxide, silicon nitride or zirconium dioxide.
7. the preparation method of anisotropic conductive film as claimed in claim 6, is characterized in that: 0.2% to 70% of the volume that the volume of described insulating barrier is described spherical substrate.
8. the preparation method of anisotropic conductive film as claimed in claim 6, is characterized in that: described insulating barrier offers the hole that is net distribution.
9. the preparation method of anisotropic conductive film as claimed in claim 6, is characterized in that: the method that forms described insulating barrier is masterplate method collocation sol-gel process, masterplate method collocation coprecipitation or masterplate method collocation hydro thermal method.
10. the preparation method of anisotropic conductive film as claimed in claim 9, it is characterized in that: the process of described masterplate method collocation sol-gel process is: (1) adds mass fraction in isopropyl alcohol is that polyethylene glycol oxide-PPOX-polyethylene glycol oxide triblock copolymer compound of 2-5% is as soft masterplate, (2) adding mass fraction is 15% tetraethoxysilane, reaction 1 hour after mixing, (3) carry out pickling in the salpeter solution of 1mol/L.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210582322.2A CN103903683A (en) | 2012-12-28 | 2012-12-28 | Anisotropic conductive film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210582322.2A CN103903683A (en) | 2012-12-28 | 2012-12-28 | Anisotropic conductive film and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103903683A true CN103903683A (en) | 2014-07-02 |
Family
ID=50994956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210582322.2A Pending CN103903683A (en) | 2012-12-28 | 2012-12-28 | Anisotropic conductive film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103903683A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104312469A (en) * | 2014-10-22 | 2015-01-28 | 苏州百诚精密科技有限公司 | Anisotropic conductive adhesive tape |
| CN107342117A (en) * | 2017-07-18 | 2017-11-10 | 深圳市华星光电技术有限公司 | Anisotropic conductive film and preparation method thereof |
| CN109799660A (en) * | 2019-03-20 | 2019-05-24 | 武汉华星光电技术有限公司 | Liquid crystal display device |
| CN112421262A (en) * | 2014-11-17 | 2021-02-26 | 迪睿合株式会社 | Anisotropic conductive film, connection structure, and method for producing same |
-
2012
- 2012-12-28 CN CN201210582322.2A patent/CN103903683A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104312469A (en) * | 2014-10-22 | 2015-01-28 | 苏州百诚精密科技有限公司 | Anisotropic conductive adhesive tape |
| CN112421262A (en) * | 2014-11-17 | 2021-02-26 | 迪睿合株式会社 | Anisotropic conductive film, connection structure, and method for producing same |
| US11923333B2 (en) | 2014-11-17 | 2024-03-05 | Dexerials Corporation | Anisotropic electrically conductive film |
| CN107342117A (en) * | 2017-07-18 | 2017-11-10 | 深圳市华星光电技术有限公司 | Anisotropic conductive film and preparation method thereof |
| CN107342117B (en) * | 2017-07-18 | 2019-03-12 | 深圳市华星光电技术有限公司 | Anisotropic conductive film and preparation method thereof |
| CN109799660A (en) * | 2019-03-20 | 2019-05-24 | 武汉华星光电技术有限公司 | Liquid crystal display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6959311B2 (en) | Anisotropic conductive film, connection structure, and method for manufacturing the connection structure | |
| CN103903683A (en) | Anisotropic conductive film and preparation method thereof | |
| CN103597915B (en) | Metal foil patterned-laminate, metal foil laminate, metal foil laminate substrate, solar cell module and manufacturing method for metal foil patterned-laminate | |
| TWI701311B (en) | Sheet and composite sheet | |
| CN104916551B (en) | The manufacturing method and semiconductor device of semiconductor device | |
| CN101728479A (en) | Layered piezoelectric element and injection device using the same | |
| JP6750197B2 (en) | Anisotropic conductive film and connection structure | |
| TW201817048A (en) | Light emitting device and method for manufacturing same | |
| CN103320022B (en) | Low-modulus acrylate conductive adhesive used in semiconductor chip packaging, and preparation method thereof | |
| CN105185719A (en) | Lock type hybrid bonding method | |
| JP2017141328A (en) | Transparent conductive adhesive, laminate, and substrate joining method | |
| JP4867276B2 (en) | Manufacturing method of ceramic substrate | |
| TWI802757B (en) | Electromagnetic wave shield sheet and electronic component mounting board | |
| CN104979226A (en) | Copper mixed bonding method | |
| CN103730192A (en) | Anisotropic conductive film and manufacturing method thereof | |
| CN103579160A (en) | Semiconductor substrate and method for manufacturing the same | |
| CN105990269B (en) | A kind of fingerprint recognition chip-packaging structure and its packaging method | |
| US20160372644A1 (en) | Method of producing light emitting device | |
| US10412838B2 (en) | Conductive particle, and connection material, connection structure, and connecting method of circuit member | |
| US9240274B2 (en) | Common mode filter and method of manufacturing the same | |
| CN103915392A (en) | Substrate, semiconductor structure and related manufacturing method thereof | |
| CN103151323A (en) | Flip packaging structure based on anisotropy conductive glue | |
| CN106459445A (en) | Resin sheet for sealing | |
| TW201415495A (en) | Anisotropic conductive film and method for manufacturing the same | |
| JP6094768B2 (en) | Ceramic substrate composite and method for producing ceramic substrate composite |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140702 |