CN103887416A - Manufacturing method of light-emitting diode - Google Patents

Manufacturing method of light-emitting diode Download PDF

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Publication number
CN103887416A
CN103887416A CN201210561775.7A CN201210561775A CN103887416A CN 103887416 A CN103887416 A CN 103887416A CN 201210561775 A CN201210561775 A CN 201210561775A CN 103887416 A CN103887416 A CN 103887416A
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CN
China
Prior art keywords
colloid
hole
mould
light
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201210561775.7A
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Chinese (zh)
Inventor
赖志成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CN201210561775.7A priority Critical patent/CN103887416A/en
Publication of CN103887416A publication Critical patent/CN103887416A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

Disclosed is a manufacturing method of a light-emitting diode. The method includes the following steps: providing a substrate, on a top face of which light-emitting-diode chips are pasted; providing a first die which is provided with through holes and pasting the first die on the top face of the substrate and making the light-emitting-diode chips accommodated in the through holes; providing a colloid and placing the colloid at the top end of the first die and then providing a scraper and scraping the colloid into the through holes; stretching the first die upwards in a vertical direction and making the first die away from the substrate so that the lower end of the colloid is exposed; because of an earth gravity force, the colloid has a tendency to flow out of the through holes from the periphery of the lower end so that the colloid at the upper end is pulled to move downwards and fill corners which are not filled full because of poor liquidity of the colloid; and because the upper end of the colloid is not separated from the first die and the colloid is high in stickness, a tractive force which exists between the inner surfaces of the through holes and the periphery of the upper end of colloid is larger than the earth gravity so that the colloid does not flow out from the lower end.

Description

The manufacture method of light-emitting diode
Technical field
The present invention relates to a kind of semiconductor element, particularly a kind of manufacture method of light-emitting diode
Background technology
The manufacture method of traditional Light-Emitting Diode comprises the steps: to provide a side surface depression to have substrate and some light-emitting diode chip for backlight unit of some through holes, and these light-emitting diode chip for backlight unit are sticked respectively in corresponding through hole, then the mode by a glue one by one these through holes are filled up to colloid, these colloids of final curing, enclose described light-emitting diode chip for backlight unit encapsulated layer in the inner thereby these colloids are formed.In order to make colloid fill rapidly through hole everywhere, industry adopts the colloid that mobility is strong, viscosity is little to fill conventionally.But the curing time of this colloid is long, conventionally cause the production cycle long.If adopt poor fluidity, colloid that viscosity is large fills in order to save curing time, easily cause in through hole not filling colloid and making to occur in encapsulated layer pore or cause encapsulated layer can not form the shape of agreement due to some place, and cause the performance of light-emitting diode not reach the requirement of expection.
Summary of the invention
In view of this, be necessary to provide a kind of manufacture method that can either ensure the performance of light-emitting diode, can shorten again the light-emitting diode of light-emitting diodes pipe manufacturer duration.
A manufacture method for light-emitting diode, comprises the following steps:
The substrate that provides end face to be sticked light-emitting diode chip for backlight unit;
The first mould that offers through hole is provided, described the first mould is sticked on the end face of described substrate and described light-emitting diode chip for backlight unit is housed in these through holes;
Provide that viscosity is large, the colloid of poor fluidity these colloids are placed on to the top of the first mould, then scraper is provided, described scraper is scraped described colloid in described through hole;
Described the first mould is vertically upwards drawn high, make the bottom of described the first mould make the lower end of colloid expose away from the end face of described substrate, due to earth gravity effect, these colloids have from its lower end periphery mobile trend outside through hole, fill up the corner of not filling up due to its poor fluidity thereby the colloid that pulls upper end is descending, and due to the upper end of colloid, not depart from the viscosity of the first mould and colloid large again, the tractive effort existing between the periphery of the inner surface of through hole and the upper end of colloid is greater than earth gravity and causes colloid can not flow out from its lower end,
Then solidifying described colloid makes its formation enclose the encapsulated layer of described light-emitting diode chip for backlight unit and removes described the first mould.
In the present invention, because selecting viscosity large, the colloid action of poor fluidity forms the material of encapsulated layer, thereby can shorten the curing time of described colloid, and due to by taking that described the first mould is vertically upwards drawn high to certain distance, make the bottom of described the first mould make the lower end of colloid expose away from the end face of described substrate, thereby due to earth gravity effect, these colloids have from its lower end periphery mobile trend outside through hole, and then the colloid that pulls upper end is descending and fill up the corner of not filling up due to its poor fluidity, and due to the upper end of colloid, the viscosity of break away from moulds and colloid is not large again, the tractive effort existing between the periphery of the inner surface of through hole and the upper end of colloid is greater than earth gravity and causes colloid can not flow out from its lower end, so, the colloid being filled in through hole just can be avoided causing because of the generation of bubble the not good problem of encapsulated layer performance forming.
Accompanying drawing explanation
Fig. 1 to Fig. 7 is the schematic diagram of the light-emitting diode manufacture process of first embodiment of the invention.
Fig. 8 to Fig. 9 is the schematic diagram of the light-emitting diode manufacture process of second embodiment of the invention.
Figure 10 to Figure 12 is the schematic diagram of the light-emitting diode manufacture process of third embodiment of the invention.
Main element symbol description
Substrate 10
Light-emitting diode chip for backlight unit 20
The first mould 30
Through hole 31
Colloid 40
Scraper 50
Encapsulated layer 60、60a
Light-emitting diode 70、70a
The second mould 80
Accepting hole 81
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
The manufacture method of the light-emitting diode chip for backlight unit module of first embodiment of the invention comprises the steps:
Refer to Fig. 1 to Fig. 3, a substrate 10 and multiple light-emitting diode chip for backlight unit 20 are provided, described light-emitting diode chip for backlight unit 20 is mutually equidistantly spaced and is sticked at the end face of described substrate 10.One the first mould 30 that offers multiple through holes 31 is provided, described the first mould 30 is sticked on the end face of described substrate 10 and makes described light-emitting diode chip for backlight unit 20 be housed in respectively the center bottom of these through holes 31.The height that described light-emitting diode chip for backlight unit 20 upwards protrudes out from the end face of substrate 10 is less than the degree of depth of described through hole 31.
Refer to Fig. 4 and Fig. 5, provide that some viscosityes are large, the colloid 40 of poor fluidity these colloids 40 are placed on to the top of the first mould 30, then one scraper 50 is provided, makes described scraper 50 drive in the same direction described colloid 40 move and described colloid 40 is filled in described through hole 31.These colloids 40 can fill up described through hole 31 and wrap up completely light-emitting diode chip for backlight unit 20 also can only fill up described through hole 31 approach described substrate 10 end face bottom and the top of light-emitting diode chip for backlight unit 20 is exposed to outside described colloid 40.In the present embodiment, these colloids 40 fill up described through hole 31 and wrap up light-emitting diode chip for backlight unit 20 completely.
Refer to Fig. 6 and Fig. 7, described the first mould 30 is vertically upwards drawn high to certain distance, make the bottom of described the first mould 30 away from the end face of described substrate 10, the lower end of colloid 40 be exposed.Due to earth gravity effect, these colloids 40 have from its lower end periphery towards the outer mobile trend of through hole 31, fill up the corner of not filling up due to its poor fluidity thereby the colloid 40 that pulls upper end is descending, and due to the upper end of colloid 40, not depart from the viscosity of the first mould 30 and colloid 40 large again, and the tractive effort existing between the periphery of the upper end of the inner surface of through hole 31 and colloid 40 is greater than earth gravity and causes colloid 40 can not flow out from its lower end.So, the colloid 40 being filled in through hole 31 just can be avoided the generation because of bubble.
Then make its formation comprise the encapsulated layer 60 of light-emitting diode chip for backlight unit 20 and remove multiple light-emitting diodes 70 that described the first mould 30 just can obtain having manufactured by solidifying described colloid 40.The longitudinal section of described encapsulated layer 60 is square.
In the present invention, because selecting viscosity large, colloid 40 effects of poor fluidity form the material of encapsulated layer 60, thereby can shorten the described curing time of colloid 40, and due to by taking that described the first mould 30 is vertically upwards drawn high to certain distance, make the bottom of described the first mould 30 away from the end face of described substrate 10, the lower end of colloid 40 be exposed, thereby due to earth gravity effect, these colloids 40 have from its lower end periphery towards the outer mobile trend of through hole 31, and then the colloid 40 that pulls upper end is descending and fill up the corner of not filling up due to its poor fluidity, and due to the upper end of colloid 40, the viscosity of break away from moulds and colloid 40 is not large again, the tractive effort existing between the periphery of the upper end of the inner surface of through hole 31 and colloid 40 is greater than earth gravity and causes colloid 40 can not flow out from its lower end, so, the colloid 40 being filled in through hole 31 just can be avoided causing because of the generation of bubble the not good problem of encapsulated layer 60 performances forming.
Refer to Fig. 8 to Fig. 9, the manufacture process of the light-emitting diode shown in the second embodiment further comprised the steps: before described colloid 40 solidifies on the basis of manufacture process described in the first embodiment, described the first mould 30 makes the upper end of its through hole 31 vacant because drawing high, in the case of the thickness of the interior colloid 40 of through hole 31 needs further to increase, can further on the top of the first mould 30, colloid 40 be set and repeat the action that scrapes of scraper 50 and make colloid 40 further fill up the upper end of receiving through hole 31, the complex edge vertical direction of laying equal stress on draws high the action of the first mould 30.The action of above filler and stretching can be repeated multiple times, equals earth gravity until colloid 40 reaches the tractive effort existing between predetermined thickness or the inner surface of through hole 31 and the periphery of the upper end of colloid 40.Thereby then solidify described colloid 40 and remove described the first mould 30 and obtain required light-emitting diode 70a.
Refer to Figure 10 and Figure 12, the manufacture process of the light-emitting diode shown in the 3rd embodiment further comprises the steps: that on the basis of manufacture process described in the first embodiment the upper surface of the first mould 30 after lifting arranges second mould 80 with some accepting holes 81, and the accepting hole 81 of described the second mould 80 is for running through up and down relatively the through hole of both side surface and being communicated with and arranging with corresponding through hole 31.In the present embodiment, the shape of described accepting hole 81 is identical with the shape of corresponding through hole 31, but its aperture is less than the aperture of described through hole 31 and is positioned at the upper center of corresponding through hole 31.Then place colloid 40 on the top of the second mould 80, then with scraper 50, these colloids 40 are scraped in corresponding accepting hole 81.In the time that the accepting hole 81 of the second mould 80 has the large degree of depth, for fear of the generation of colloid 40 interior bubbles, the bubble of the elimination of mode that can be by upwards lifting the second mould 80 in it, then removes the first mould 30 and the second mould 80 and solidifies colloid 40 and obtain having the light-emitting diode 70b that longitudinal section is inverted "T"-shaped encapsulated layer 60a.
Understandably, the mould that is arranged on the first mould 30 tops can have other all required shapes, and its quantity is not limited to described in the present embodiment, and described colloid 40 can be transparent or semitransparent silica gel or the silica gel of the fluorescent material that adulterated.

Claims (10)

1. a manufacture method for light-emitting diode, comprises the following steps:
The substrate that provides end face to be sticked light-emitting diode chip for backlight unit;
The first mould that offers through hole is provided, described the first mould is sticked on the end face of described substrate and described light-emitting diode chip for backlight unit is housed in these through holes;
Provide that viscosity is large, the colloid of poor fluidity these colloids are placed on to the top of the first mould, then scraper is provided, described scraper is scraped described colloid in described through hole;
Described the first mould is vertically upwards drawn high, make the bottom of described the first mould make the lower end of colloid expose away from the end face of described substrate, due to earth gravity effect, these colloids have from its lower end periphery mobile trend outside through hole, fill up the corner of not filling up due to its poor fluidity thereby the colloid that pulls upper end is descending, and due to the upper end of colloid, not depart from the viscosity of the first mould and colloid large again, the tractive effort existing between the periphery of the inner surface of through hole and the upper end of colloid is greater than earth gravity and causes colloid can not flow out from its lower end,
Then solidifying described colloid makes its formation enclose the encapsulated layer of described light-emitting diode chip for backlight unit and removes described the first mould.
2. the manufacture method of light-emitting diode as claimed in claim 1, is characterized in that: the height that described light-emitting diode chip for backlight unit upwards protrudes out from the end face of substrate is less than the degree of depth of described through hole.
3. the manufacture method of light-emitting diode as claimed in claim 1, is characterized in that: described colloid fill up described through hole approach described substrate end face bottom and the top of light-emitting diode chip for backlight unit is exposed to outside described colloid.
4. the manufacture method of light-emitting diode as claimed in claim 2, is characterized in that: described colloid fills up described through hole and wraps up light-emitting diode chip for backlight unit completely.
5. the manufacture method of light-emitting diode as claimed in claim 4, it is characterized in that: before solidifying described colloid, described the first mould makes the upper end of its through hole vacant because drawing high, in the case of the thickness of colloid in through hole needs further to increase, further on the top of the first mould, colloid is set and repeats the action that scraper scrapes and make colloid further fill up the upper end of receiving through hole.
6. the manufacture method of light-emitting diode as claimed in claim 5, is characterized in that: repeat vertically to draw high the action of the first mould, make again to add colloid in the first mould through hole to fill up described tool and run through vacant region, upper end.
7. the manufacture method of light-emitting diode as claimed in claim 1, it is characterized in that: before solidifying described colloid, the upper surface of the first mould after lifting arranges second mould with some accepting holes, the accepting hole of described the second mould is run through up and down the through hole of both side surface relatively and be communicated with and arrange with corresponding through hole, then place colloid on the top of the second mould, then with scraper, these colloids are scraped in corresponding accepting hole.
8. the manufacture method of light-emitting diode as claimed in claim 7, is characterized in that: the shape of described accepting hole is identical with the shape of corresponding through hole, but its aperture is less than the aperture of described through hole and is positioned at the upper center of corresponding through hole.
9. the manufacture method of light-emitting diode as claimed in claim 7, it is characterized in that: in the time that the accepting hole of the second mould has the large degree of depth, for fear of the generation of bubble in colloid, upwards lift the second mould, make described colloid fill up the accepting hole of described the second mould.
10. the manufacture method of light-emitting diode as claimed in claim 9, is characterized in that: after described colloid solidifies, it is inverted "T"-shaped that the longitudinal section of its packaging body is.
CN201210561775.7A 2012-12-22 2012-12-22 Manufacturing method of light-emitting diode Pending CN103887416A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210561775.7A CN103887416A (en) 2012-12-22 2012-12-22 Manufacturing method of light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210561775.7A CN103887416A (en) 2012-12-22 2012-12-22 Manufacturing method of light-emitting diode

Publications (1)

Publication Number Publication Date
CN103887416A true CN103887416A (en) 2014-06-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210561775.7A Pending CN103887416A (en) 2012-12-22 2012-12-22 Manufacturing method of light-emitting diode

Country Status (1)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016078001A1 (en) * 2014-11-19 2016-05-26 何素华 Led glue dispensing fixture
CN107579148A (en) * 2016-07-05 2018-01-12 深圳市瑞丰光电子股份有限公司 LED packaging plastics molding structure and its method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016078001A1 (en) * 2014-11-19 2016-05-26 何素华 Led glue dispensing fixture
CN107579148A (en) * 2016-07-05 2018-01-12 深圳市瑞丰光电子股份有限公司 LED packaging plastics molding structure and its method

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Application publication date: 20140625