CN103887136B - A kind of etching cavity being applicable to metal dry etching semiconductor equipment - Google Patents
A kind of etching cavity being applicable to metal dry etching semiconductor equipment Download PDFInfo
- Publication number
- CN103887136B CN103887136B CN201210557778.3A CN201210557778A CN103887136B CN 103887136 B CN103887136 B CN 103887136B CN 201210557778 A CN201210557778 A CN 201210557778A CN 103887136 B CN103887136 B CN 103887136B
- Authority
- CN
- China
- Prior art keywords
- electrostatic chuck
- dead ring
- cooling base
- wafer
- top surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention provides a kind of etching cavity being applicable to metal dry etching semiconductor equipment, it comprises: electrostatic chuck, and this electrostatic chuck places wafer to be etched; Around the cooling base of outer circumferential side being arranged on electrostatic chuck, and around being arranged on the outer circumferential side of electrostatic chuck and the dead ring be positioned at above cooling base; In the lower surface of described dead ring, interval arranges some cylindrical fixing projections; The top surface of described cooling base corresponds respectively on the relative position of fixing projection, and interval arranges some cylinder shape grooves; Each fixing projection respectively corresponding embedding is arranged in each groove, is arranged on by dead ring on described cooling base; Between fixing projection and groove inner wall, a retainer ring is also set.The present invention can effectively avoid the position because of dead ring move and wafer placement location is tilted, and the situation finally causing etching homogeneity to be greatly affected occurs, and improves the end product quality of semiconductor wafer, also enhances productivity in the lump.
Description
Technical field
The present invention is applied to metal dry etching semiconductor equipment, refers in particular to a kind of etching cavity that can improve wafer engraving uniformity.
Background technology
In prior art, metal dry etching semiconductor equipment is semiconductor equipment wafer being carried out to etching processing conventional in field of semiconductor manufacture.As shown in Figure 1, be the structural representation of the etching cavity of this metal dry etching semiconductor equipment, it comprises electrostatic chuck 1, and this electrostatic chuck 1 places wafer 2 to be etched; Around the cooling base 3 of outer circumferential side being arranged on electrostatic chuck 1, and around being arranged on the outer circumferential side of electrostatic chuck 1 and the dead ring 4 be positioned at above described cooling base 3.
The top surface of described dead ring 4 flushes with the top surface of described electrostatic chuck 1, a protrusion extension 42 is also provided with in the top outer of described dead ring 4, this protrusion extension 42 is arranged around the outer circumferential side of wafer 2, and the top surface of this protrusion extension 42 flushes with the top surface of described wafer 2.
Further, the lower surface of described dead ring 4 is arranged at intervals with some cylindrical fixing projections 41; The top surface of described cooling base 3 corresponds respectively on the relative position of fixing projection 41, is arranged at intervals with some cylinder shape grooves 31; Each fixing projection 41 described respectively corresponding embedding is arranged in each groove 31, and dead ring 4 is arranged on described cooling base 3.
But be not difficult to find out from Fig. 1, the internal diameter of prior art further groove 31 is obviously greater than the external diameter of fixing projection 41.Therefore, when fixing projection 41 embedding is arranged in groove 31, between itself and the inwall of groove 31, there is larger gap.Although in order to ensure that fixing projection 41 can embed in groove 31 smoothly, must there is certain tolerance between the external diameter of fixing projection 41 and the internal diameter of groove 31, the external diameter namely fixing projection 41 need be slightly less than the external diameter of groove 31.But the tolerance existed between the two in prior art is too large, the gap namely fixed between projection 41 and groove 31 is too large, thus causes dead ring 4 cannot be fixedly installed on cooling base 3 and not be moved.
When the chamber door of the etching cavity of this metal dry etching semiconductor equipment opens or closes, caused equipment vibrations can make dead ring 4 gradually move on cooling base 3, namely the position of dead ring 4 relative wafer 2 changes, certain side of this dead ring 4 can relatively near even touching electrostatic chuck 1, thus when causing placing wafer 2 on electrostatic chuck 1, easy generation situation as shown in Figure 2, namely certain side of wafer 2 can directly be placed on the top surface of protrusion extension 42 of dead ring 4, wafer 2 is made to be in heeling condition all the time in whole etching process, the uniformity etched finally is caused to be affected greatly, the end product quality of semiconductor wafer is had a greatly reduced quality.Therefore, in actual etching process, once there is above-mentioned situation, must run by halt device, open etching cavity adjustment, directly have influence on the production efficiency of semiconductor equipment.
Summary of the invention
The object of this invention is to provide a kind of etching cavity being applicable to metal dry etching semiconductor equipment, can effectively avoid the position because of dead ring move and wafer placement location is tilted, the situation finally causing etching homogeneity to be greatly affected occurs.
In order to achieve the above object, the invention provides a kind of etching cavity being applicable to metal dry etching semiconductor equipment, it comprises: electrostatic chuck, and this electrostatic chuck places wafer to be etched; Around the cooling base of outer circumferential side being arranged on electrostatic chuck, and around being arranged on the outer circumferential side of electrostatic chuck and the dead ring be positioned at above described cooling base; Feature is, the lower surface of described dead ring is arranged at intervals with some cylindrical fixing projections; The top surface of described cooling base corresponds respectively on the relative position of fixing projection, is arranged at intervals with some cylinder shape grooves; Each fixing projection described respectively corresponding embedding is arranged in each groove, is arranged on by dead ring on described cooling base; Between described fixing projection and groove inner wall, a retainer ring is also set.
The internal diameter of described retainer ring and the external diameter of described fixing projection match; The external diameter of described retainer ring and the internal diameter of described groove match.
Described retainer ring is ceramic ring.
The top surface of described dead ring flushes with the top surface of described electrostatic chuck.
The top outer of described dead ring also arranges a protrusion extension, and its outer circumferential side around wafer is arranged, and the top surface of this protrusion extension flushes with the top surface of described wafer.
The etching cavity being applicable to metal dry etching semiconductor equipment provided by the present invention, because gap location larger between fixing projection and groove have employed retainer ring to fill up, original tolerance larger is between the two made up, cause the tolerance of dead ring occurrence positions movement to be reduced even to eliminate, what make that fixing projection can be real is fixedly embedded in groove, and being fixedly installed on cooling base that namely dead ring can be real is not moved.Therefore, the situation that wafer placement location tilts can effectively be avoided, thus ensures the uniformity of wafer in etching process, improves the end product quality of semiconductor wafer, also improves the production efficiency of semiconductor equipment in the lump.
Accompanying drawing explanation
Fig. 1 is the structural representation of the etching cavity of metal dry etching semiconductor equipment in prior art;
Fig. 2, after dead ring position is moved in prior art, causes the structural representation that wafer placement location tilts;
Fig. 3 is the structural representation of the etching cavity of metal dry etching semiconductor equipment provided by the present invention.
Embodiment
Below in conjunction with Fig. 3, for the metal dry etching semiconductor equipment of conventional LAMTCP9600, by preferred specific embodiment, describe the present invention in detail.
As shown in Figure 3, be the structural representation of the etching cavity of LAMTCP9600 provided by the present invention, it comprises: electrostatic chuck 1, and this electrostatic chuck 1 places wafer 2 to be etched; Around the cooling base 3 of outer circumferential side being arranged on electrostatic chuck 1, and around being arranged on the outer circumferential side of electrostatic chuck 1 and the dead ring 4 be positioned at above described cooling base 3.
The lower surface of described dead ring 4 is arranged at intervals with some cylindrical fixing projections 41; The top surface of described cooling base 3 corresponds respectively on the relative position of fixing projection 41, is arranged at intervals with some cylinder shape grooves 31; Each fixing projection 41 described respectively corresponding embedding is arranged in each groove 31, and dead ring 4 is arranged on described cooling base 3.A retainer ring 5 is also provided with between described fixing projection 41 and groove 31 inwall.
The internal diameter of described retainer ring 5 and the external diameter of described fixing projection 41 match; The external diameter of described retainer ring 5 and the internal diameter of described groove 31 match.
Described retainer ring 5 is ceramic ring.
The top surface of described dead ring 4 flushes with the top surface of described electrostatic chuck 1.
The top outer of described dead ring 4 also arranges a protrusion extension 42, and its outer circumferential side around wafer 2 is arranged, and the top surface of this protrusion extension 42 flushes with the top surface of described wafer 2.
Because the gap location that the present invention is larger between fixing projection and groove have employed retainer ring to fill up, what make that fixing projection can be real is fixedly embedded in groove, original tolerance larger between the two ring that is fixed makes up, and causes the tolerance of dead ring occurrence positions movement to be reduced and even eliminates.When the equipment cavity door of LAMTCP9600 is opened or is closed, caused vibrations can not make dead ring, on cooling base, larger displacement occur, then the placement location of wafer is caused to tilt, thus effectively can ensure the uniformity of wafer in etching process, improve the end product quality of semiconductor wafer, also can improve the production efficiency of semiconductor equipment simultaneously.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, the present invention can not only be applied to the semiconductor equipment of LAMTCP9600, and it can be applicable to the semiconductor equipment of other any metal dry etchings.Protection scope of the present invention should be limited to the appended claims.
Claims (3)
1. be applicable to an etching cavity for metal dry etching semiconductor equipment, it comprises: electrostatic chuck (1), and this electrostatic chuck (1) is upper places wafer (2) to be etched; Around the cooling base (3) of outer circumferential side being arranged on electrostatic chuck (1); And around be arranged on electrostatic chuck (1) outer circumferential side and be positioned at described cooling base (3) top dead ring (4); It is characterized in that,
In the lower surface of described dead ring (4), interval arranges some cylindrical fixing projections (41);
The top surface of described cooling base (3) corresponds respectively on the relative position of fixing projection (41), and interval arranges some cylinder shape grooves (31);
Fix described in each projection (41) respectively corresponding embedding be arranged in each groove (31), dead ring (4) is arranged on described cooling base (3);
Between described fixing projection (41) and groove (31) inwall, a retainer ring (5) is also set;
The internal diameter of described retainer ring (5) and the external diameter of described fixing projection (41) match; The external diameter of described retainer ring (5) and the internal diameter of described groove (31) match;
Described retainer ring (5) is ceramic ring.
2. be applicable to the etching cavity of metal dry etching semiconductor equipment as claimed in claim 1, it is characterized in that, the top surface of described dead ring (4) flushes with the top surface of described electrostatic chuck (1).
3. be applicable to the etching cavity of metal dry etching semiconductor equipment as claimed in claim 2, it is characterized in that, the top outer of described dead ring (4) also arranges a protrusion extension (42), its outer circumferential side around wafer (2) is arranged, and the top surface of this protrusion extension (42) flushes with the top surface of described wafer (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210557778.3A CN103887136B (en) | 2012-12-20 | 2012-12-20 | A kind of etching cavity being applicable to metal dry etching semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210557778.3A CN103887136B (en) | 2012-12-20 | 2012-12-20 | A kind of etching cavity being applicable to metal dry etching semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103887136A CN103887136A (en) | 2014-06-25 |
| CN103887136B true CN103887136B (en) | 2016-03-09 |
Family
ID=50955974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210557778.3A Active CN103887136B (en) | 2012-12-20 | 2012-12-20 | A kind of etching cavity being applicable to metal dry etching semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103887136B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106548959B (en) * | 2015-09-23 | 2020-01-03 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101325169A (en) * | 2007-06-12 | 2008-12-17 | 东京毅力科创株式会社 | Carrying bench and plasma treatment apparatus using the same |
| CN101465313A (en) * | 2007-12-18 | 2009-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Technique component of electrostatic chuck |
| CN101996919A (en) * | 2009-08-25 | 2011-03-30 | 佳能安内华股份有限公司 | Substrate holding apparatus, mask alignment method, and vacuum processing apparatus |
| CN102106191A (en) * | 2008-07-23 | 2011-06-22 | 应用材料公司 | Workpiece support for a plasma reactor with controlled apportionment of RF power to a process kit ring |
| TW201130084A (en) * | 2009-11-20 | 2011-09-01 | Applied Materials Inc | Electrostatic chuck with reduced arcing |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0688226A (en) * | 1992-09-08 | 1994-03-29 | Nissin Electric Co Ltd | Substrate holder |
| US6563686B2 (en) * | 2001-03-19 | 2003-05-13 | Applied Materials, Inc. | Pedestal assembly with enhanced thermal conductivity |
| US6677167B2 (en) * | 2002-03-04 | 2004-01-13 | Hitachi High-Technologies Corporation | Wafer processing apparatus and a wafer stage and a wafer processing method |
| JP2003309167A (en) * | 2002-04-16 | 2003-10-31 | Canon Inc | Substrate holder |
-
2012
- 2012-12-20 CN CN201210557778.3A patent/CN103887136B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101325169A (en) * | 2007-06-12 | 2008-12-17 | 东京毅力科创株式会社 | Carrying bench and plasma treatment apparatus using the same |
| CN101465313A (en) * | 2007-12-18 | 2009-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Technique component of electrostatic chuck |
| CN102106191A (en) * | 2008-07-23 | 2011-06-22 | 应用材料公司 | Workpiece support for a plasma reactor with controlled apportionment of RF power to a process kit ring |
| CN101996919A (en) * | 2009-08-25 | 2011-03-30 | 佳能安内华股份有限公司 | Substrate holding apparatus, mask alignment method, and vacuum processing apparatus |
| TW201130084A (en) * | 2009-11-20 | 2011-09-01 | Applied Materials Inc | Electrostatic chuck with reduced arcing |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103887136A (en) | 2014-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017216441A5 (en) | ||
| CN103094037A (en) | Holding device and plasma processing device using the same | |
| JP2019505088A5 (en) | ||
| SG11201810641UA (en) | Chuck, substrate-holding apparatus, pattern-forming apparatus, and method of manufacturing article | |
| CN103887136B (en) | A kind of etching cavity being applicable to metal dry etching semiconductor equipment | |
| KR200495564Y1 (en) | Non-scratching and durable substrate support pin | |
| CN104282610A (en) | Bearing device and plasma machining device | |
| CN203508753U (en) | Male die quick-changing structure | |
| WO2018084448A3 (en) | Mother plate, method for manufacturing mother plate, method for manufacturing mask, and oled pixel deposition method | |
| CN101570049A (en) | Tool and method for extracting mold insert | |
| CN204458082U (en) | A kind of piston ring | |
| CN103419145A (en) | Method for mounting or detaching electrostatic sucker by aid of positioning device | |
| CN102437039A (en) | Method for forming side wall by uniformly depositing silicon nitride | |
| CN104128741A (en) | Fixed scroll plate machining method | |
| CN104916572A (en) | Bearing device and plasma processing device | |
| CN204171970U (en) | A kind of oil sprayer bushing erecting tools | |
| CN201946579U (en) | Conveying part | |
| CN103043262B (en) | Opening sealing machine with improved vacuumizing mechanisms | |
| KR20140071691A (en) | a forging die device of connecting pipe | |
| CN206732654U (en) | A kind of barrier part clamp for machining | |
| CN204340107U (en) | A kind of mould for the production of band nameplate product | |
| CN104299881A (en) | Plasma etching device | |
| CN203343766U (en) | Diesel injector hole fixture | |
| CN204905227U (en) | Split type PSS sculpture tray tool | |
| CN103925380A (en) | Pressure control valve and method for optimizing plasma uniformity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |