CN103885297A - Correcting method of lighting uniformity of photoetching machine exposure system - Google Patents
Correcting method of lighting uniformity of photoetching machine exposure system Download PDFInfo
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- CN103885297A CN103885297A CN201410075046.XA CN201410075046A CN103885297A CN 103885297 A CN103885297 A CN 103885297A CN 201410075046 A CN201410075046 A CN 201410075046A CN 103885297 A CN103885297 A CN 103885297A
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- 239000011159 matrix material Substances 0.000 description 4
- 230000001915 proofreading effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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Abstract
The invention discloses a correcting method of lighting uniformity of a photoetching machine exposure system. The method comprises the following steps of moving the last lens of a collecting lens group along an optical axis direction, and thus realizing the regulation of relative light intensity the edge position and the center position of a rectangle lighting light spot. The correcting method disclosed by the invention has the advantages that an optical element does not need to be additionally arranged, and the correction of the lighting uniformity is realized by simply moving the existing optical element in the photoetching machine exposure system. The method has the characteristics that the operation is convenient, and the light intensity attenuation is not caused; the correcting method is suitable for the photoetching machine exposure system of any ultraviolet light wave band.
Description
Technical field
The present invention relates to lithographic equipment, particularly a kind of bearing calibration of illumination uniformity of exposure system of photo-etching machine.
Background technology
In advanced exposure system of photo-etching machine, for consistance and the homogeneity of the lines that ensure to expose, in single exposure process, require the illumination hot spot being radiated on mask plate to there is very high homogeneity.Particularly, in step-by-step scanning photo-etching device, conventionally require to be less than 0.5% along the integration heterogeneity of non-direction of scanning (being defined as directions X).Utilize the accurate microlens array of controlling of face shape to carry out wavelet decomposition and integration again to light beam, can realize the high uniformity of illumination hot spot.But, due to the position difference of the light lens that pass through in beam propagation process on difference illumination hot spot, cause lens to distinguish to some extent the absorption of different visual fields glazed thread; And in real exposure system of photo-etching machine, the plated film homogeneity of the lens surface that face shape steepness is larger is difficult to control well, also can cause the light-intensity difference of different illumination hot spots.Therefore, must fully proofread and correct the illumination uniformity of exposure system of photo-etching machine, make it to reach the request for utilization of litho machine.
The method of proofreading and correct exposure system of photo-etching machine illumination uniformity at present need to be utilized extra optical element, mainly contains two kinds of methods: a kind of is to utilize two back and forth movements that become transmitance plate, realizes one-dimensional square to inhomogeneity correction; Another is by the insertion of assigned address finger piece in array of fingers and shifts out adjustment illumination uniformity.Two kinds of methods all need to be after illuminated mirror group be inserted homogeneity correction device near the position of mask plate between group and mask plate, and these two kinds of methods all exist following shortcoming:
1) all can cause certain energy loss, two kinds of methods all decay to realize homogeneity correction to the stronger part of light intensity in field of illumination, can cause the decline of entire system energy, affect the productive rate of litho machine;
2) require optical system to there is longer optics operating distance, increase optical design difficulty;
3) need extra optics and the mechanical organ placed, increased the complicacy of system, homogeneity correction device contains moving component, and amount of movement is larger, needs comparatively complicated motion and control gear, is unfavorable for the system integration;
4) these two kinds of methods all contain shield element, and element increases system noise to the scattering meeting of light beam, are unfavorable for the long-term stability of exposure system.
Traditional rectangular light spot uniformity correcting method be after illuminated mirror group, organize 110 and mask plate 111 between insert a homogeneity correction device near the position of mask plate 111, this homogeneity correction device can be to be made up of two blocks of change transmitance plates that mobile and moving direction is directions X perpendicular to optical axis mutually, also can be to be formed by the array of fingers that can move into and shift out, their immigration and the direction shifting out are perpendicular to the direction of optical axis, i.e. directions X.Obviously, insert the method for homogeneity correction device owing to light beam being existed to the problem of blocking or decaying, reduce the overall transmitance of system, and homogeneity correction device contains moving component, and amount of movement is larger, need comparatively complicated motion and control gear, so the method is unfavorable for the system integration.
Formerly technology " for irradiating the drift-compensated lithographic equipment of homogeneity correction and homogeneity and method " (referring to patent CN101923293B), discloses a kind of for irradiating the drift-compensated lithographic equipment of homogeneity correction and homogeneity and method.Specifically disclose a kind of photoetching uniformity correction system, system finger piece is configured in and illuminating bundle intersection, and can move into and shift out, to proofread and correct the intensity of the each several part of radiation beam.The method is blocked corresponding field of illumination by the movement at finger piece tip, thereby realizes inhomogeneity compensation, but this system needs complicated control panel and mechanical hook-up.
Formerly technology " a kind of illumination uniformity compensating and have the litho machine of this device " provides a kind of illumination uniformity compensating, comprise and tactic first compensating plate and second compensating plate vertical with optical axis direction, the transmitance of two block compensation plates from one end to the other side increases progressively, the transmitance that forms gradual change distributes, by mobile two block compensation plates, can realize illumination uniformity compensation.The first compensating plate and the second compensating plate are positioned at the top of mask aligner mask plate near the position of illuminated mirror group.The method during for the poor compensating system of homogeneity, will cause that transmitance sharply declines, and cause litho machine productive rate to decline.
Summary of the invention
The object of the invention is to overcome the deficiency of above-mentioned formerly technology, a kind of bearing calibration of illumination uniformity of exposure system of photo-etching machine is provided.The method, without adding extra optical element, only relies on the simple movement of existing optical element in exposure system, can realize the correction of illumination uniformity.The method has the advantages that to be convenient to realize and do not cause light intensity attenuation.Be applicable to the exposure system of photo-etching machine of any ultraviolet light wave band.
Technical solution of the present invention is as follows:
A kind of bearing calibration of exposure system of photo-etching machine illumination uniformity, the unit of realizing required illumination hot spot in described exposure system of photo-etching machine mainly contains diffraction optical element, varifocal collimating mirror group, conical mirror group, microlens array, condenser group, scanning slit and illuminated mirror group, the rectangular illumination hot spot producing is radiated on mask plate, realize the transmission of mask graph by projection objective, it is characterized in that, the method is to move last piece lens of condenser group along optical axis direction, realize the adjusting of rectangular illumination hot spot marginal position and center relative light intensity, thereby proofread and correct the unevenness of rectangular illumination hot spot.
Last piece lens of described condenser group are lens near scanning slit.
In the time that last described piece lens move to close scanning slit direction, the relative light intensity of rectangular illumination hot spot marginal position can increase.And when last described piece lens are when moving away from scanning slit direction, the relative light intensity of rectangular illumination hot spot marginal position can reduce.
The moving range of last described piece lens is +/-3mm, realizes movement and the precision positioning of lens by electric precise displacement platform.The described amount of movement of last piece lens and the light illumination mode of exposure system of photo-etching machine and coherence factor are relevant, the light illumination mode of described exposure system of photo-etching machine refers to the light illumination modes such as traditional lighting, Uniform Illumination, two utmost points illuminations and quadrupole illuminating, and described coherence factor refers to the ratio of the diameter of projection objective diaphragm face intraoral illumination pupil and the diameter of described projection objective pupil.In the practical application of described method, the amount of movement of last described piece lens should specifically be determined by the homogeneity of measuring rectangular illumination hot spot on silicon chip face, and by recording the corresponding relation between amount of movement and light illumination mode and the coherence factor of last piece lens, organized data matrix, determines the amount of movement of last piece lens under current light illumination mode and coherence factor condition by searching matrix.
The only position of mobile last piece lens of condenser group of method that described illumination uniformity is proofreaied and correct, in exposure system of photo-etching machine, remaining optical unit and assembly keep motionless.
The method that described illumination uniformity is proofreaied and correct the both rectangular illumination hot spot edge light intensity described in recoverable, lower than the situation of central light strength, can be used for again proofreading and correct the situation of described rectangular illumination hot spot edge light intensity higher than central light strength.
Compared with technology formerly, the present invention has following technological merit:
(1) the present invention, by move the last a slice lens position of condenser group along optical axis direction, can realize the correction of rectangular light spot light intensity uniformity, need not in exposure system, add extra optical element, has reduced the complexity of optical system.
(2) the present invention does not adopt and blocks or the method for beam attenuation realizes homogeneity correction, has improved the overall transmitance of system, is conducive to improve the productive rate of litho machine.
(3) the present invention is applicable to the litho machine of 193nm or 248nm wavelength and dry method or immersion, in adjusting rectangular light spot light intensity uniformity, do not affect the distribution character according to pupil plane light beam, can not affect the polarization characteristic of light field simultaneously, there is stronger adaptive faculty.
Brief description of the drawings
Fig. 1 is the local index path of exposure system of photo-etching machine (from diffraction optical element to mask plate).
Fig. 2 is the distribution (Z direction is optical axis direction, and X is vertical with Z direction with Y-direction) along X and Y-direction of the schematic diagram of rectangular illumination hot spot and the integration light intensity of two-dimensional directional.
Fig. 3 is the index path of condenser group in exposure system of photo-etching machine and the working method schematic diagram of rectangular illumination hot spot homogeneity correction.
Fig. 4 is the schematic diagram of rectangular illumination hot spot homogeneity correction of the present invention.
Fig. 5 is the result of embodiment exposure system of photo-etching machine rectangular illumination hot spot homogeneity correction.
Embodiment
Below in conjunction with accompanying drawing and example, the present invention is further illustrated, but should not limit the scope of the invention with this.
First refer to Fig. 1, Fig. 1 is the local index path of exposure system of photo-etching machine, comprise the local light path from diffraction optical element to mask plate, be the main optical system that forms illuminator in exposure system of photo-etching machine, organize 110 after comprising successively group 108 before diffraction optical element 101, varifocal collimating mirror group 102, the first catoptron 103, conical mirror group 104, microlens array 105, condenser group 106, scanning slit 107, illuminated mirror group, the second catoptron 109 and illuminated mirror group.The rectangular illumination hot spot that illuminator produces is radiated on mask plate 111, and by projection objective, mask plate graphic projection is imaged on silicon chip face.
Described rectangular illumination hot spot is as shown in schematic diagram in Fig. 2.Rectangular illumination hot spot 201 is illuminated fields of a rectangle, has different light distribution features at X and Y-direction.At directions X, light distribution distributes 202 according to flat-top, and the heterogeneity of its top light distribution requires very high, and such as in the litho machine of NA=1.3, the heterogeneity of directions X top light distribution requires to be less than 0.25%(and defines by integral uniformity).In Y-direction, light distribution distributes 203 according to trapezoidal, Gauss or super-Gaussian.Y-direction is scan exposure direction in step-by-step scanning photo-etching device, adopts trapezoidal, Gauss or super-Gaussian to be distributed with to be beneficial to the light intensity that overcomes illuminating bundle to shake the exposure dose error of bringing in this direction.That the top homogeneity that directions X flat-top is distributed is proofreaied and correct for exposure system of photo-etching machine rectangular illumination hot spot homogeneity correction.
Rectangular light spot uniformity correcting method of the present invention, the schematic diagram of its working method as shown in Figure 3.Realize the method for rectangular illumination hot spot homogeneity correction, it is characterized in that, move the position of condenser group 106 last piece lens 301 along optical axis direction, realize the adjusting of rectangular illumination hot spot marginal position 311 and center 312 relative light intensities, thereby proofread and correct the homogeneity of rectangular illumination hot spot.
In the time that last described piece lens 301 move to close scanning slit 107 directions, the relative light intensity of the marginal position 311 of rectangular illumination hot spot 201 can increase.And when last described piece lens 301 are when moving away from scanning slit 107 directions, the relative light intensity of rectangular illumination hot spot 201 marginal positions 311 can reduce.
The moving range of last described piece lens 301 is +/-3mm, realizes movement and the precision positioning of lens by electric precise displacement platform.The described amount of movement of last piece lens 301 and the light illumination mode of exposure system of photo-etching machine and coherence factor are relevant, and the light illumination mode of described exposure system of photo-etching machine refers to the light illumination modes such as traditional lighting, Uniform Illumination, two utmost point illuminations and quadrupole illuminating.Described coherence factor refers to the ratio of the pupil diameter of beam diameter in illumination iris and described projection objective.In the practical application of described method, the amount of movement of last described piece lens 301 should specifically be determined by the homogeneity of measuring rectangular illumination hot spot 201 on silicon chip face, and by recording the corresponding relation between amount of movement and light illumination mode and the coherence factor of last piece lens, organized data matrix, determines the amount of movement of last piece lens 301 under current light illumination mode and coherence factor condition by the method for searching matrix.
The method that described illumination uniformity is proofreaied and correct, both can proofread and correct the situation of described rectangular illumination hot spot 201 edge 311 light intensity lower than center 312 light intensity, also can be for proofreading and correct the situation of described rectangular illumination hot spot 201 edge 311 light intensity higher than center 312 light intensity.
Fig. 4 is the schematic diagram of rectangular illumination hot spot homogeneity correction of the present invention.In figure, describe condenser group 106 last piece lens 301 and laid respectively at original position 401, in the position 402 of scanning slit 107 and 403 3 kinds of the positions situation away from scanning slit 107, assemble the illumination hot spot of generation in the convergence of rays situation of different visual fields by condenser group.In figure for convenient show only provide one-dimensional square to result, this result can be generalized to two-dimensional directional.Because condenser group exists certain aberration, thus the relative exposure difference of different field positions can be caused, thus cause the uniformity decreases of rectangular illumination hot spot 201.For example, in the time that last piece lens 301 are positioned at original position 401, the convergence situation of the light at rectangular illumination hot spot 201 311He centers, edge 312 as shown in Figure 4, the light beam of 311 positions, edge is more concentrated, therefore its relative exposure is lower than the relative exposure at center 312, so can cause the lower phenomenon of relative energy at rectangular illumination hot spot 201 edges 311.By the position of mobile last piece lens 301, after moving near the direction of scanning slit 107, make it in 402 position, now the relative exposure at edge 311 can increase, and therefore can be used for proofreading and correct the lower problem of rectangular illumination hot spot 201 edge 311 relative energies.If the relative energy at rectangular illumination hot spot 201 edges 311 is higher, can adopt last piece lens 301 to moving away from the direction of scanning slit 107, such as position 403.Move to behind this position, the relative energy at rectangular illumination hot spot 201 edges 311 can decline, and can correct the too high situation of edge energy.
Below by a specific embodiment, further illustrate the method that exposure system of photo-etching machine illumination uniformity is proofreaied and correct.The condenser group of NA1.3 exposure system of photo-etching machine adopts the method for designing of global face, and specific design is 7 spherical mirrors.This embodiment adopts traditional lighting to carry out emulation, obtains three width figure shown in Fig. 5, be respectively under coherence factor (being respectively 0.53, the 0.33 and 0.13) condition different at three kinds the rectangular light spot before and after homogeneity correction along the integrated intensity distribution curve of directions X.In figure, 501,503 and 505 is respectively the integration curve of light distribution original under three kinds of coherence factor conditions, now condenser group 106 last piece lens 301 are positioned at original position 401, can calculate integration heterogeneity in three kinds of situations now for ± 0.35%, ± 0.33% and ± 0.46%.Utilize uniformity correcting method provided by the invention, can finally obtain respectively 502 in figure, 503 and 505, the integration heterogeneity after correction is ± 0.23%, ± 0.24% and ± 0.3%.In three kinds of situations, move respectively-1mm of last piece lens 301 ,-1mm and+2mm."+" number representative is moved to the direction near scanning slit, and "-" number representative is moved to the direction away from scanning slit.Described embodiment shows that the present invention can realize extraordinary homogeneity, can in the high-end optical devices such as photo-etching machine illumination system, be applied.
Compared with technology formerly, the present invention has following technological merit:
(1) the present invention, by move the last a slice lens position of condenser group along optical axis direction, realizes the correction of rectangular light spot light intensity uniformity, need not in exposure system, add extra optical element, has reduced the complexity of optical system.
(2) the present invention does not adopt and blocks or the method for beam attenuation realizes homogeneity correction, has improved the overall transmitance of system, is conducive to improve the productive rate of litho machine.
(3) the present invention is applicable to the litho machine of 193nm or 248nm wavelength and dry method or immersion, in adjusting rectangular light spot light intensity uniformity, do not affect the distribution character according to pupil plane light beam, can not affect the polarization characteristic of light field simultaneously, there is stronger adaptive faculty.
Claims (1)
1. the bearing calibration of an exposure system of photo-etching machine illumination uniformity, the unit of realizing required illumination hot spot in described exposure system of photo-etching machine mainly contains diffraction optical element, varifocal collimating mirror group, conical mirror group, microlens array, condenser group, scanning slit and illuminated mirror group, the rectangular illumination hot spot producing is radiated on mask plate, realize the transmission of mask graph by projection objective, it is characterized in that, the method is to move last piece lens of described condenser group along optical axis direction, realize the adjusting of rectangular illumination hot spot marginal position and center relative light intensity, thereby proofread and correct the unevenness of rectangular illumination hot spot.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020001645A1 (en) * | 2018-06-29 | 2020-01-02 | 上海微电子装备（集团）股份有限公司 | Lithography machine luminance uniformity compensation method and device, and illumination system and lithography machine |
| CN110716320A (en) * | 2019-11-19 | 2020-01-21 | 上海华力微电子有限公司 | DOE optical path imaging system and photoetching machine |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002214525A (en) * | 2001-01-16 | 2002-07-31 | Nikon Corp | Illumination optical system |
| US20040246456A1 (en) * | 2003-06-06 | 2004-12-09 | Takahisa Shiozawa | Exposure apparatus |
| TWI246717B (en) * | 2003-10-06 | 2006-01-01 | Canon Kk | Illumination optical system and exposure apparatus having the same |
| CN101410946A (en) * | 2006-03-27 | 2009-04-15 | 株式会社尼康 | Lighting optical system, exposure system, and device production method |
| CN101807009A (en) * | 2010-03-15 | 2010-08-18 | 上海微电子装备有限公司 | Illumination uniformity compensating device and lithography machine provided therewith |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002214525A (en) * | 2001-01-16 | 2002-07-31 | Nikon Corp | Illumination optical system |
| US20040246456A1 (en) * | 2003-06-06 | 2004-12-09 | Takahisa Shiozawa | Exposure apparatus |
| TWI246717B (en) * | 2003-10-06 | 2006-01-01 | Canon Kk | Illumination optical system and exposure apparatus having the same |
| CN101410946A (en) * | 2006-03-27 | 2009-04-15 | 株式会社尼康 | Lighting optical system, exposure system, and device production method |
| CN101807009A (en) * | 2010-03-15 | 2010-08-18 | 上海微电子装备有限公司 | Illumination uniformity compensating device and lithography machine provided therewith |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020001645A1 (en) * | 2018-06-29 | 2020-01-02 | 上海微电子装备（集团）股份有限公司 | Lithography machine luminance uniformity compensation method and device, and illumination system and lithography machine |
| CN110716320A (en) * | 2019-11-19 | 2020-01-21 | 上海华力微电子有限公司 | DOE optical path imaging system and photoetching machine |
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