CN103872178A - 一种薄膜太阳能电池及组件、以及二者的制备方法 - Google Patents
一种薄膜太阳能电池及组件、以及二者的制备方法 Download PDFInfo
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- CN103872178A CN103872178A CN201410073083.7A CN201410073083A CN103872178A CN 103872178 A CN103872178 A CN 103872178A CN 201410073083 A CN201410073083 A CN 201410073083A CN 103872178 A CN103872178 A CN 103872178A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410073083.7A CN103872178B (zh) | 2014-02-28 | 2014-02-28 | 一种薄膜太阳能电池及组件、以及二者的制备方法 |
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CN201410073083.7A CN103872178B (zh) | 2014-02-28 | 2014-02-28 | 一种薄膜太阳能电池及组件、以及二者的制备方法 |
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CN103872178A true CN103872178A (zh) | 2014-06-18 |
CN103872178B CN103872178B (zh) | 2016-07-06 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104638034A (zh) * | 2015-02-13 | 2015-05-20 | 中国科学院重庆绿色智能技术研究院 | 一种柔性薄膜太阳能电池 |
CN108131632A (zh) * | 2017-12-13 | 2018-06-08 | 柏涛涛 | 一种智能型的太阳能路灯 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110100447A1 (en) * | 2009-11-04 | 2011-05-05 | General Electric Company | Layer for thin film photovoltaics and a solar cell made therefrom |
CN102104087A (zh) * | 2010-12-15 | 2011-06-22 | 上海理工大学 | 一种柔性薄膜太阳能电池制备方法 |
CN102157623A (zh) * | 2011-03-08 | 2011-08-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种薄膜太阳能电池衬底的剥离转移方法 |
CN102656702A (zh) * | 2009-08-07 | 2012-09-05 | 格尔德殿工业公司 | 包含石墨烯基层的电子装置和/或其制造方法 |
CN103390672A (zh) * | 2013-08-02 | 2013-11-13 | 北京汉能创昱科技有限公司 | 一种集成式薄膜太阳能电池组件及其制备方法 |
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2014
- 2014-02-28 CN CN201410073083.7A patent/CN103872178B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102656702A (zh) * | 2009-08-07 | 2012-09-05 | 格尔德殿工业公司 | 包含石墨烯基层的电子装置和/或其制造方法 |
US20110100447A1 (en) * | 2009-11-04 | 2011-05-05 | General Electric Company | Layer for thin film photovoltaics and a solar cell made therefrom |
CN102104087A (zh) * | 2010-12-15 | 2011-06-22 | 上海理工大学 | 一种柔性薄膜太阳能电池制备方法 |
CN102157623A (zh) * | 2011-03-08 | 2011-08-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种薄膜太阳能电池衬底的剥离转移方法 |
CN103390672A (zh) * | 2013-08-02 | 2013-11-13 | 北京汉能创昱科技有限公司 | 一种集成式薄膜太阳能电池组件及其制备方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104638034A (zh) * | 2015-02-13 | 2015-05-20 | 中国科学院重庆绿色智能技术研究院 | 一种柔性薄膜太阳能电池 |
CN108131632A (zh) * | 2017-12-13 | 2018-06-08 | 柏涛涛 | 一种智能型的太阳能路灯 |
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CN103872178B (zh) | 2016-07-06 |
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Inventor after: Zhuang Chunquan Inventor after: Wang Yong Inventor after: Hu Jutao Inventor after: Fu Zhengkuan Inventor after: Wu Weimin Inventor after: Wang Zhiqiang Inventor after: Zhao Qinling Inventor before: Zhuang Chunquan Inventor before: Wang Yong Inventor before: Hu Jutao Inventor before: Fu Zhengkuan Inventor before: Wu Weimin |
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Free format text: CORRECT: INVENTOR; FROM: ZHUANG CHUNQUAN WANG YONG HU JUTAO FU ZHENGKUAN WU WEIMIN TO: ZHUANG CHUNQUAN WANG YONG HU JUTAO FU ZHENGKUAN WU WEIMIN WANG ZHIQIANG ZHAO QINLING |
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Effective date of registration: 20141113 Address after: 213000, room 158, No. 684 Renmin East Road, Wujin hi tech Zone, Changzhou, Jiangsu Applicant after: JIANGSU WUJIN HANERGY PHOTOVOLTAIC CO.,LTD. Applicant after: Hanenergy Solar Photovoltaic Technology Co.,Ltd. Address before: 213000, room 158, No. 684 Renmin East Road, Wujin hi tech Zone, Changzhou, Jiangsu Applicant before: JIANGSU WUJIN HANERGY PHOTOVOLTAIC CO.,LTD. |
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Address after: Room 684, No. 158 Renmin East Road, Wujin District, Changzhou City, Jiangsu Province, 213000 Co-patentee after: Hanenergy Solar Photovoltaic Technology Co.,Ltd. Patentee after: JIANGSU WUJIN HANERGY FILM SOLAR ENERGY Co.,Ltd. Address before: Room 684, No. 158 Renmin East Road, Wujin District, Changzhou City, Jiangsu Province, 213000 Co-patentee before: Hanenergy Solar Photovoltaic Technology Co.,Ltd. Patentee before: JIANGSU WUJIN HANERGY PHOTOVOLTAIC CO.,LTD. |
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