CN103872178A - 一种薄膜太阳能电池及组件、以及二者的制备方法 - Google Patents

一种薄膜太阳能电池及组件、以及二者的制备方法 Download PDF

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CN103872178A
CN103872178A CN201410073083.7A CN201410073083A CN103872178A CN 103872178 A CN103872178 A CN 103872178A CN 201410073083 A CN201410073083 A CN 201410073083A CN 103872178 A CN103872178 A CN 103872178A
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庄春泉
王勇
胡居涛
符政宽
吴卫民
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Hanergy Mobile Energy Holdings Group Co Ltd
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Abstract

本发明公开了一种薄膜太阳能电池及组件、以及二者的制备方法,包括以下步骤:在临时衬底上制备石墨烯薄膜作为薄膜太阳能电池前电极;将生长了石墨烯薄膜的临时衬底贴附在支撑基板上,然后制备薄膜太阳能电池体层及电池背电极;在电池背电极上涂覆层转移保护层;将临时衬底刻蚀掉;将前述电池转移至透明柔性衬底上;去除层转移保护层。采用本发明的方法,薄膜电池的制备可使用传统设备完成,避免了柔性衬底的耐温限制,并且石墨烯相对传统TCO电极的制备成本低;大幅简化了柔性薄膜电池的制备方法,降低了电池的制备成本。

Description

一种薄膜太阳能电池及组件、以及二者的制备方法
技术领域
本发明涉及一种柔性薄膜太阳能电池及其制备方法,以及由该柔性薄膜太阳能电池构成的光伏组件。
背景技术
柔性太阳能电池板是世界太阳能产业的新兴技术产品,它是由树脂包封的无定形硅作为主要光电元件层平铺在柔性材料制成的底板上制成的太阳能电池板,由于其具有可弯曲折叠,便于携带的显著优点,因此其用途广泛。然而传统柔性薄膜太阳能电池的制备过程中,对设备要求高,工艺过程受衬底耐温性差(特别是聚合物衬底,如PI、PET、PEN等)的限制;使得柔性薄膜电池的制备成本高,电池效率较低,这大大限制了柔性薄膜电池特别是透明衬底柔性薄膜电池产业的发展。
发明内容
本发明的第一个目的是解决现有技术存在的问题,提供一种可使用传统设备完成,避免柔性衬底的耐温限制,降低了电池的制备成本的薄膜太阳能电池的制备方法。
实现本发明第一个目的的技术方案是一种薄膜太阳能电池的制备方法,包括以下步骤:
步骤一:在临时衬底上制备石墨烯薄膜作为薄膜太阳能电池前电极;石墨烯薄膜的透光率高于90%,面电阻低于50Ω/sq;
步骤二:将步骤一的生长了石墨烯薄膜的临时衬底贴附在支撑基板上,然后制备薄膜太阳能电池体层及电池背电极;
步骤三:在电池背电极上涂覆层转移保护层;
步骤四:将临时衬底刻蚀掉;
步骤五:将前述电池转移至透明柔性衬底上;
步骤六:去除层转移保护层。
作为优化,所述步骤一中,所述步骤一中,若与薄膜太阳电池前电极接触的为薄膜太阳能电池体层的P层,则提升石墨烯功函数,使其高于步骤二中与薄膜太阳电池前电极接触的薄膜太阳能电池体层的P层的功函数,薄膜太阳电池前电极与P层形成欧姆接触;若与薄膜太阳电池前电极接触的为薄膜太阳能电池体层的N层,则降低石墨烯功函数,使其低于步骤二中与薄膜太阳电池前电极接触的薄膜太阳能电池体层的N层的功函数,薄膜太阳电池前电极与N层形成欧姆接触。
作为进一步的优化,所述步骤二还包括在薄膜太阳电池前电极与薄膜太阳能电池体层之间增加过渡层;若与过渡层接触的为薄膜太阳能电池体层的P层,则所述过渡层的价带等于或高于与其接触的薄膜太阳能电池体层的P层的价带,导带高于与其接触的薄膜太阳能电池体层的P层的导带;若与过渡层接触的为薄膜太阳能电池体层的N层,则所述过渡层的导带等于或低于与其接触的薄膜太阳能电池体层的N层的导带,价带低于与其接触的薄膜太阳能电池体层的N层的价带。
本发明的第二个目的是提供一种由前述制备方法制备而得的薄膜太阳能电池。
实现本发明第二个目的的技术方案有两种结构的薄膜太阳能电池,其中第一种依次为柔性透明衬底、薄膜太阳电池前电极、薄膜太阳能电池体层和电池背电极;所述薄膜太阳电池前电极的透光率高于90%,面电阻低于50Ω/sq;所述薄膜太阳能电池体层包括PN和PIN结构。
另一种依次为柔性透明衬底、薄膜太阳电池前电极、过渡层、薄膜太阳能电池体层和电池背电极;所述薄膜太阳电池前电极的透光率高于90%,面电阻低于50Ω/sq;所述薄膜太阳能电池体层包括PN和PIN结构;所述过渡层的价带等于或高于与其接触的薄膜太阳能电池体层的功能层的价带,导带高于与其接触的薄膜太阳能电池体层的功能层的导带。
本发明的第三个目的是提供一种电池组件的制备方法。
实现本发明第三个目的的方案是:一种薄膜太阳能电池组件的制备方法,将多个前述的薄膜太阳能电池串联或者并联成电池片层,再使用透明柔性前板和柔性背板封装成组件;所述透明柔性前板和柔性背板的材质为TPT或TPE或PPE或PE。
此外,还有另一种薄膜太阳能电池组件的制备方法,包括以下步骤:
步骤一:在临时衬底上制备石墨烯薄膜作为薄膜太阳能电池前电极;石墨烯薄膜的透光率高于90%,面电阻低于50Ω/sq;
步骤二:将步骤一的生长了石墨烯薄膜的临时衬底贴附在支撑基板上,然后制备薄膜太阳能电池体层及电池背电极;
步骤三:制作引出背电极用柔性背板将步骤二的产品封装为准组件;
步骤四:将临时衬底刻蚀掉;
步骤五:制作引出前电极,用透明柔性前板与步骤四所得产品结合封装为太阳能电池组件。
本发明的第四个目的是提供一种由前述柔性薄膜太阳能电池构成的电池组件。
实现本发明第四个目的的技术方案是一种柔性薄膜太阳能电池组件,由前述的工艺方法制备而得。
采用了上述技术方案后,本发明具有以下的积极的效果:(1)本发明以石墨烯代替常规TCO作为透明导电前电极,相对TCO薄膜,石墨烯制备工艺简单,成本低。
(2)本发明直接在生长了石墨烯的临时衬底上制备薄膜太阳能电池,电池制备完成后再通过层转移技术将石墨烯作为前电极的电池整体转移至透明衬底上(如透明PI、PET、PEN等),实现柔性薄膜太阳能电池的制备;这样就避免了聚合物材料直接作为衬底镀膜的耐高温限制(普通聚合物耐温在200℃以下,而优质太阳能薄膜电池的制备温度需在200℃以上),采用此制备方法,可采用常规的玻璃衬底太阳能电池镀膜设备制备,对设备要求低,无需专门的柔性衬底镀膜设备,制备成本低。
(3)本发明通过表面改性对石墨烯表面功函数进行调节,改善其与太阳能电池功能层的接触;同时在石墨烯与电池功能层之间增加过渡层,阻止接触功能层少数载流子的输运,显著降低载流子的复合。
(4)本发明提供了两种电池组件的制备方法,一种是先涂覆层转移保护层,制备得到电池后再一定数量的电池片进行串并联组合,通过柔性前板与背板材料封装,完成柔性薄膜太阳能电池组件的制备,子电池无需经过P1-P3激光刻划,节省了昂贵的激光设备投入;另一种是无需涂覆层转移保护层,由半封装的准组件——去掉临时衬底——完整封装为组件的工艺流程完成,减少了涂覆层转移保护层和去掉层转移保护层的工作,步骤减少,效率提高,工艺难度也降低。
(3)本发明的工艺具有推广价值,同样适用于等柔性薄膜太阳能电池(硅薄膜、铜铟镓硒、铜锌锡硫、碲化镉、有机、染料敏化等)的制备。
附图说明
为了使本发明的内容更容易被清楚地理解,下面根据具体实施例并结合附图,对本发明作进一步详细的说明,其中
图1为本发明的一种薄膜太阳能电池的结构示意图。
图2为由图1的薄膜太阳能电池构成的薄膜太阳能电池组件的俯视图。
图3为图2的A-A剖视图。
图4为实施例1的制备方法的步骤一制备而得的薄膜太阳电池前电极的结构示意图。
图5为实施例1的制备方法的步骤三制备而得的临时产品的结构示意图。
图6为实施例2的制备方法中对石墨烯薄膜进行功函数优化后,薄膜太阳电池前电极与薄膜太阳能电池体层形成欧姆接触的能带图。
图7为实施例3的制备方法中加入了过渡层后,薄膜太阳电池前电极与薄膜太阳能电池体层的能带图。
图8为实施例4的组件制备方法中的准组件的结构示意图。
图9为实施例4的组件制备方法的组件的结构示意图。
附图中标号为:
柔性透明衬底1、薄膜太阳电池前电极2、引出前电极21、薄膜太阳能电池体层3、电池背电极4、引出背电极41、透明柔性前板5、电池片层6、柔性背板7、临时衬底8、层转移保护层9、过渡层10。
具体实施方式
(实施例1)
见图1,本发明的柔性薄膜太阳能电池,由下至上依次为柔性透明衬底1、薄膜太阳电池前电极2、薄膜太阳能电池体层3和电池背电极4;薄膜太阳电池前电极2的透光率高于90%,面电阻低于50Ω/sq。柔性透明衬底1的材质为PI或PET或PEN。
制备步骤为:
步骤一:如图4所示,在临时衬底8上制备石墨烯薄膜作为薄膜太阳电池前电极2;经过化学改性和层数优化使石墨烯薄膜的透光率高于90%,面电阻低于50Ω/sq;临时衬底8为铜箔或镍箔或钌或铱或硅或碳化硅或云母;制备石墨烯薄膜的方法为化学气相沉积法;
步骤二:将步骤一的生长了石墨烯薄膜的临时衬底8贴附在支撑基板上,然后制备薄膜太阳能电池体层3及电池背电极4;
步骤三:在电池背电极4上涂覆层转移保护层9,此时的结构如图5所示;层转移保护层9为PDMS或PMMA;
步骤四:将临时衬底8刻蚀掉;
步骤五:将前述电池转移至透明柔性衬底1上;柔性透明衬底1的材质为PI或PET或PEN;
步骤六:去除层转移保护层9,由此得到如图1所示的柔性薄膜太阳能电池。
见图2和图3,将多个柔性薄膜太阳能电池串联或者并联成电池片层6,再用透明柔性前板5与柔性背板7封装起来就构成了柔性薄膜太阳能电池组件。透明柔性前板5和柔性背板7的材质为TPT或TPE或PPE或PE。
(实施例2)
与实施例1相比,在步骤一中,通过表面改性对石墨烯表面功函数进行调节,改善其与太阳能电池功能层的接触;如图6所示,薄膜太阳电池前电极与薄膜太阳能电池体层3的P层接触,提升石墨烯功函数,使其高于P层的功函数,薄膜太阳电池前电极2与P层形成欧姆接触,图中,Wg表示石墨烯功函数;Wp表示电池与石墨烯接触功能层的功函数;E指能级(电子所处该能级状态的几率);Eo指半导体或金属的真空能级,即电子摆脱半导体或金属束缚的能级;Ec指半导体的导带;Ev指半导体的价带;Ec和Ev之间为半导体的禁带宽度,电子不能在它们中间存在,只能在Ec上面或Ev下面;在没有外界能量的情况下(绝对零度),电子一般在Ev以下,当有外界能量,如温度升高或光照条件下,电子就会从Ev以下能级跃迁到Ec以上能级,Ev以下能级就留出了空位,又叫空穴,和电子相反,空穴带正电,跃迁产生的电子和空穴均可自由导电,半导体的导电性也相应提高;Ef指费米能级,指绝对零度时,半导体或金属中所有电子都在费米能级以下,温度升高或光照等条件下,电子就会占据Ef以上的能级;Ef的特点是,金属和半导体,或半导体与半导体接触时,两种材料的Ef会移动到相同的高度(即接触面的载流子分布状态会平衡),其它Eo、Ec、Ev相应的向下或向上移动来满足Ef的平衡,移动中能带接触面就会有弯曲,这种弯曲就会影响载流子(电子和空穴)的传输状态,通过本实施例对材料改性就可以改变两种材料接触面的弯曲状态,从而使载流子的传输向对制备电池有利的方向发展。
(实施例3)
与实施例2相比,步骤二还包括在薄膜太阳电池前电极2与薄膜太阳能电池体层3之间增加过渡层10;若与过渡层10接触的为薄膜太阳能电池体层3的P层,则所述过渡层10的价带等于获高于与其接触的薄膜太阳能电池体层3的P层的价带,导带高于与其接触的薄膜太阳能电池体层3的P层的导带;若与过渡层10接触的为薄膜太阳能电池体层3的N层,则所述过渡层10的导带等于或低于与其接触的薄膜太阳能电池体层3的N层的导带,价带低于与其接触的薄膜太阳能电池体层3的N层的价带。如图7所示,为薄膜太阳电池前电极2和薄膜太阳能电池体层3的P层接触后的能带关系图,A指薄膜太阳电池前电极2的能带状态,B指中间过渡层的能带状态,C指电池P层的能带状态,通过本实施例的设计使其接触形成这样的能带状态来阻止不需要的载流子(这里为电子)传输到石墨烯层,使需要传输过来的空穴不至于和多余过来的电子复合掉。
(实施例4)
本实施例是薄膜太阳能电池组件的另一种制备方法,步骤为:
步骤一:在临时衬底8上制备石墨烯薄膜作为薄膜太阳能电池前电极2;石墨烯薄膜的透光率高于90%,面电阻低于50Ω/sq;
步骤二:将步骤一的生长了石墨烯薄膜的临时衬底8贴附在支撑基板上,然后制备薄膜太阳能电池体层3及电池背电极4;
步骤三:制作引出背电极41用柔性背板7将步骤二的产品封装为准组件,如图8所示;
步骤四:将临时衬底8刻蚀掉;
步骤五:制作引出前电极21,用透明柔性前板5与步骤四所得产品结合封装为如图9所示的太阳能电池组件。
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (9)

1.一种薄膜太阳能电池的制备方法,其特征在于包括以下步骤:
步骤一:在临时衬底(8)上制备石墨烯薄膜作为薄膜太阳电池前电极(2);石墨烯薄膜的透光率高于90%,面电阻低于50Ω/sq;
步骤二:将步骤一的生长了石墨烯薄膜的临时衬底(8)贴附在支撑基板上,然后制备薄膜太阳能电池体层(3)及电池背电极(4);
步骤三:在电池背电极(4)上涂覆层转移保护层(9);
步骤四:将临时衬底(8)刻蚀掉;
步骤五:将前述电池转移至透明柔性衬底(1)上;
步骤六:去除层转移保护层(9)。
2.根据权利要求1所述的一种薄膜太阳能电池的制备方法,其特征在于:所述步骤一中,若与薄膜太阳电池前电极(2)接触的为薄膜太阳能电池体层(3)的P层,则提升石墨烯功函数,使其高于步骤二中与薄膜太阳电池前电极(2)接触的薄膜太阳能电池体层(3)的P层的功函数,薄膜太阳电池前电极(2)与P层形成欧姆接触;若与薄膜太阳电池前电极(2)接触的为薄膜太阳能电池体层(3)的N层,则降低石墨烯功函数,使其低于步骤二中与薄膜太阳电池前电极(2)接触的薄膜太阳能电池体层(3)的N层的功函数;薄膜太阳电池前电极(2)与N层形成欧姆接触。
3.根据权利要求2所述的一种薄膜太阳能电池的制备方法,其特征在于:所述步骤二还包括在薄膜太阳电池前电极(2)与薄膜太阳能电池体层(3)之间增加过渡层(10);若与过渡层(10)接触的为薄膜太阳能电池体层(3)的P层,则所述过渡层(10)的价带等于或高于与其接触的薄膜太阳能电池体层(3)的P层的价带,导带高于与其接触的薄膜太阳能电池体层(3)的P层的导带;若与过渡层(10)接触的为薄膜太阳能电池体层(3)的N层,则所述过渡层(10)的导带等于或低于与其接触的薄膜太阳能电池体层(3)的N层的导带,价带低于与其接触的薄膜太阳能电池体层(3)的N层的价带。
4.一种薄膜太阳能电池,其特征在于:由权利要求2所述的方法制备而得,依次为柔性透明衬底(1)、薄膜太阳电池前电极(2)、薄膜太阳能电池体层(3)和电池背电极(4);所述薄膜太阳电池前电极(2)的透光率高于90%,面电阻低于50Ω/sq;所述薄膜太阳能电池体层(3)包括PN和PIN结构。
5.一种薄膜太阳能电池,其特征在于:由权利要求3所述的方法制备而得,依次为柔性透明衬底(1)、薄膜太阳电池前电极(2)、过渡层(10)、薄膜太阳能电池体层(3)和电池背电极(4);所述薄膜太阳电池前电极(2)的透光率高于90%,面电阻低于50Ω/sq;所述薄膜太阳能电池体层(3)包括PN和PIN结构;所述过渡层(10)的价带等于与其接触的薄膜太阳能电池体层(3)的功能层的价带,导带高于与其接触的薄膜太阳能电池体层(3)的功能层的导带。
6.一种薄膜太阳能电池组件的制备方法,其特征在于:将多个如权利要求4或5所述的薄膜太阳能电池串联或者并联成电池片层(6),再使用透明柔性前板(5)和柔性背板(7)封装成组件;所述透明柔性前板(5)和柔性背板(7)的材质为TPT或TPE或PPE或PE。
7.一种薄膜太阳能电池组件的制备方法,其特征在于包括以下步骤:
步骤一:在临时衬底(8)上制备石墨烯薄膜作为薄膜太阳电池前电极(2);石墨烯薄膜的透光率高于90%,面电阻低于50Ω/sq;
步骤二:将步骤一的生长了石墨烯薄膜的临时衬底(8)贴附在支撑基板上,然后制备薄膜太阳能电池体层(3)及电池背电极(4);
步骤三:制作引出背电极(41)用柔性背板(7)将步骤二的产品封装为准组件;
步骤四:将临时衬底(8)刻蚀掉;
步骤五:制作引出前电极(21),用透明柔性前板(5)与步骤四所得产品结合封装为太阳能电池组件。
8.一种薄膜太阳能电池组件,其特征在于:由权利要求6制备而得。
9.一种薄膜太阳能电池组件,其特征在于:由权利要求7制备而得。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104638034A (zh) * 2015-02-13 2015-05-20 中国科学院重庆绿色智能技术研究院 一种柔性薄膜太阳能电池
CN108131632A (zh) * 2017-12-13 2018-06-08 柏涛涛 一种智能型的太阳能路灯

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110100447A1 (en) * 2009-11-04 2011-05-05 General Electric Company Layer for thin film photovoltaics and a solar cell made therefrom
CN102104087A (zh) * 2010-12-15 2011-06-22 上海理工大学 一种柔性薄膜太阳能电池制备方法
CN102157623A (zh) * 2011-03-08 2011-08-17 中国科学院苏州纳米技术与纳米仿生研究所 一种薄膜太阳能电池衬底的剥离转移方法
CN102656702A (zh) * 2009-08-07 2012-09-05 格尔德殿工业公司 包含石墨烯基层的电子装置和/或其制造方法
CN103390672A (zh) * 2013-08-02 2013-11-13 北京汉能创昱科技有限公司 一种集成式薄膜太阳能电池组件及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102656702A (zh) * 2009-08-07 2012-09-05 格尔德殿工业公司 包含石墨烯基层的电子装置和/或其制造方法
US20110100447A1 (en) * 2009-11-04 2011-05-05 General Electric Company Layer for thin film photovoltaics and a solar cell made therefrom
CN102104087A (zh) * 2010-12-15 2011-06-22 上海理工大学 一种柔性薄膜太阳能电池制备方法
CN102157623A (zh) * 2011-03-08 2011-08-17 中国科学院苏州纳米技术与纳米仿生研究所 一种薄膜太阳能电池衬底的剥离转移方法
CN103390672A (zh) * 2013-08-02 2013-11-13 北京汉能创昱科技有限公司 一种集成式薄膜太阳能电池组件及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104638034A (zh) * 2015-02-13 2015-05-20 中国科学院重庆绿色智能技术研究院 一种柔性薄膜太阳能电池
CN108131632A (zh) * 2017-12-13 2018-06-08 柏涛涛 一种智能型的太阳能路灯

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