CN103872151B - 太阳能电池及其模组 - Google Patents
太阳能电池及其模组 Download PDFInfo
- Publication number
- CN103872151B CN103872151B CN201310027702.4A CN201310027702A CN103872151B CN 103872151 B CN103872151 B CN 103872151B CN 201310027702 A CN201310027702 A CN 201310027702A CN 103872151 B CN103872151 B CN 103872151B
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- Prior art keywords
- electrode
- finger
- bus
- solaode
- finger electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 11
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 238000007650 screen-printing Methods 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000002503 electroluminescence detection Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101147800A TWI464893B (zh) | 2012-12-17 | 2012-12-17 | 太陽能電池及其模組 |
TW101147800 | 2012-12-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103872151A CN103872151A (zh) | 2014-06-18 |
CN103872151B true CN103872151B (zh) | 2016-06-22 |
Family
ID=49759188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310027702.4A Expired - Fee Related CN103872151B (zh) | 2012-12-17 | 2013-01-24 | 太阳能电池及其模组 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140166081A1 (zh) |
EP (1) | EP2743991B1 (zh) |
JP (1) | JP5799293B2 (zh) |
CN (1) | CN103872151B (zh) |
TW (1) | TWI464893B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10090430B2 (en) | 2014-05-27 | 2018-10-02 | Sunpower Corporation | System for manufacturing a shingled solar cell module |
US11482639B2 (en) | 2014-05-27 | 2022-10-25 | Sunpower Corporation | Shingled solar cell module |
US11949026B2 (en) | 2014-05-27 | 2024-04-02 | Maxeon Solar Pte. Ltd. | Shingled solar cell module |
TWI581443B (zh) * | 2014-07-17 | 2017-05-01 | 精曜有限公司 | 太陽能模組及其製造方法 |
CN104409527A (zh) * | 2014-11-06 | 2015-03-11 | 浙江正泰太阳能科技有限公司 | 太阳能电池正面栅线结构、太阳能电池片及太阳能电池组件 |
US10861999B2 (en) | 2015-04-21 | 2020-12-08 | Sunpower Corporation | Shingled solar cell module comprising hidden tap interconnects |
US11532765B2 (en) * | 2015-04-30 | 2022-12-20 | Shangrao Jinko Solar Technology Development Co., Ltd | Solar cell and solar cell panel including the same |
KR101744535B1 (ko) | 2015-07-21 | 2017-06-20 | 엘지전자 주식회사 | 태양 전지 및 이를 포함하는 태양 전지 패널 |
TWI552361B (zh) * | 2015-12-28 | 2016-10-01 | 茂迪股份有限公司 | 太陽能電池及其模組 |
KR102622744B1 (ko) * | 2019-01-08 | 2024-01-09 | 상라오 신위안 웨동 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 및 이를 포함하는 태양 전지 패널 |
JP6891914B2 (ja) * | 2019-03-26 | 2021-06-18 | カシオ計算機株式会社 | ソーラーパネル、表示装置及び時計 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6573445B1 (en) * | 1998-11-23 | 2003-06-03 | Stichting Energieonderzoek Centrum Nederland | Method for manufacturing a metallization pattern on a photovoltaic cell |
DE102008060484A1 (de) * | 2008-12-05 | 2010-09-02 | Pepperl + Fuchs Gmbh | Halbleitersensor |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2703673B2 (ja) * | 1991-05-17 | 1998-01-26 | 三菱電機株式会社 | 半導体装置 |
JPH09283781A (ja) * | 1996-04-09 | 1997-10-31 | Sanyo Electric Co Ltd | 光起電力装置 |
JPH11298019A (ja) * | 1998-04-07 | 1999-10-29 | Sharp Corp | 太陽電池及び太陽電池製造方法 |
JP4397092B2 (ja) * | 2000-03-21 | 2010-01-13 | シチズンホールディングス株式会社 | 電子機器及び太陽電池モジュール |
JP3805299B2 (ja) * | 2002-11-26 | 2006-08-02 | 京セラ株式会社 | 太陽電池素子およびその製造方法 |
JP4121928B2 (ja) * | 2003-10-08 | 2008-07-23 | シャープ株式会社 | 太陽電池の製造方法 |
JP2008135655A (ja) * | 2006-11-29 | 2008-06-12 | Sanyo Electric Co Ltd | 太陽電池モジュール、太陽電池モジュールの製造方法、及び太陽電池セル |
WO2012009809A1 (en) * | 2010-07-23 | 2012-01-26 | Cyrium Technologies Incorporated | Solar cell with split gridline pattern |
JP5857237B2 (ja) * | 2010-11-29 | 2016-02-10 | パナソニックIpマネジメント株式会社 | 太陽電池セル及び太陽電池モジュール |
JP5874011B2 (ja) * | 2011-01-28 | 2016-03-01 | パナソニックIpマネジメント株式会社 | 太陽電池及び太陽電池モジュール |
JP2012160768A (ja) * | 2012-05-29 | 2012-08-23 | Sanyo Electric Co Ltd | 太陽電池セル |
-
2012
- 2012-12-17 TW TW101147800A patent/TWI464893B/zh not_active IP Right Cessation
-
2013
- 2013-01-24 CN CN201310027702.4A patent/CN103872151B/zh not_active Expired - Fee Related
- 2013-12-12 JP JP2013256788A patent/JP5799293B2/ja not_active Expired - Fee Related
- 2013-12-16 US US14/107,593 patent/US20140166081A1/en not_active Abandoned
- 2013-12-16 EP EP13197340.6A patent/EP2743991B1/en not_active Not-in-force
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6573445B1 (en) * | 1998-11-23 | 2003-06-03 | Stichting Energieonderzoek Centrum Nederland | Method for manufacturing a metallization pattern on a photovoltaic cell |
DE102008060484A1 (de) * | 2008-12-05 | 2010-09-02 | Pepperl + Fuchs Gmbh | Halbleitersensor |
Also Published As
Publication number | Publication date |
---|---|
JP2014120775A (ja) | 2014-06-30 |
US20140166081A1 (en) | 2014-06-19 |
EP2743991A3 (en) | 2016-10-12 |
EP2743991A2 (en) | 2014-06-18 |
TWI464893B (zh) | 2014-12-11 |
EP2743991B1 (en) | 2018-06-27 |
CN103872151A (zh) | 2014-06-18 |
JP5799293B2 (ja) | 2015-10-21 |
TW201413992A (zh) | 2014-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Lai Zhenghao Inventor after: Chen Weiyou Inventor after: Chen Zhehong Inventor after: Liu Yanzhi Inventor after: Zhang Guanlun Inventor before: Lai Zhenghao Inventor before: Chen Weiyou Inventor before: Chen Zhehong Inventor before: Liu Yanzhi |
|
COR | Change of bibliographic data | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160622 Termination date: 20200124 |