CN103872030B - Light emitting diode and encapsulating structure thereof - Google Patents
Light emitting diode and encapsulating structure thereof Download PDFInfo
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- CN103872030B CN103872030B CN201210551102.3A CN201210551102A CN103872030B CN 103872030 B CN103872030 B CN 103872030B CN 201210551102 A CN201210551102 A CN 201210551102A CN 103872030 B CN103872030 B CN 103872030B
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- electrode
- die bond
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- substrate
- encapsulating structure
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- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000000875 corresponding Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 229920002521 Macromolecule Polymers 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000000295 complement Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002093 peripheral Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Abstract
A kind of encapsulating structure, including substrate and be formed in substrate and die bond electrode separated from one another, first connect electrode, second connect electrode, encapsulating structure is for installing the first chip and the second chip, two electrodes of the first chip are respectively connecting to die bond electrode and first and connect electrode, one electrode of the second chip is connected to the first connection electrode, another electrode is optionally directly or indirectly attached to the second connection electrode, thus realizes the serial or parallel connection between the first chip and the second chip.Owing to this encapsulating structure includes that the die bond electrode separated, the first connection electrode and second connect electrode, the most multiple chips can be installed on this die bond electrode, and be selectively connected this die bond electrode, first connect electrode and the second connection electrode, thus conveniently realize the series connection of the plurality of chip and be connected in parallel.The present invention also provides for a kind of light emitting diode.
Description
Technical field
The present invention relates to a kind of luminescent device, especially a kind of light emitting diode and encapsulating structure thereof.
Background technology
LED(light emitting diode, Light-emitting diode) industry is one of industry of attracting most attention in recent years, it is developed so far, LED product has had that energy-conservation, power saving, high efficiency, response time is fast, life cycle time length and the most mercurous, there is the advantages such as environmental benefit, be therefore considered as the optimal light source of new green energy conservation from generation to generation illumination.LED is had to use the mode of integrated multiple chips to be lifted out light intensity at present.But, owing to existing LED is typically to come chip power supply only with one group of electrode, therefore limit multiple chips and be only capable of by the way of series connection connecting, be unfavorable for diversified luminous demand.
Summary of the invention
In view of this, it is necessary to provide a kind of and can realize multiple chips parallel connection and the light emitting diode of series connection and encapsulating structure thereof simultaneously.
A kind of encapsulating structure, including substrate and be formed in substrate and die bond electrode separated from one another, first connect electrode, second connect electrode, encapsulating structure is for installing the first chip and the second chip, two electrodes of the first chip are respectively connecting to die bond electrode and first and connect electrode, one electrode of the second chip is connected to the first connection electrode, another electrode is optionally directly or indirectly attached to the second connection electrode, thus realizes the serial or parallel connection between the first chip and the second chip.
A kind of light emitting diode comprising above-mentioned encapsulating structure, also include: the first chip, the second chip and encapsulated layer, two electrodes of this first chip are respectively connecting to die bond electrode and first by wire and connect electrode, one electrode of this second chip is connected to the first connection electrode, another electrode is optionally directly or indirectly attached to the second connection electrode, thus realizes the serial or parallel connection between the first chip and the second chip.
Owing to this encapsulating structure includes that the die bond electrode separated, the first connection electrode and second connect electrode, the most multiple chips can be installed on this die bond electrode, and be selectively connected this die bond electrode, first connect electrode and the second connection electrode, thus conveniently realize the series connection of the plurality of chip and be connected in parallel.
Accompanying drawing explanation
Fig. 1 is the schematic top plan view of package structure for LED of the present invention.
Fig. 2 is the elevational schematic view of package structure for LED of the present invention.
Fig. 3 is the schematic diagram cut open along III-III line of Fig. 1, and wherein a reflector is installed on package structure for LED.
Fig. 4 is the schematic diagram cut open along IV-IV line of Fig. 1, and wherein a reflector is installed on package structure for LED.
Fig. 5 is the schematic diagram that the package structure for LED of Fig. 1 installs two series chip.
Fig. 6 is the circuit theory diagrams of Fig. 5.
Fig. 7 is the schematic diagram that the package structure for LED of Fig. 1 installs two parallel chip.
Fig. 8 is the circuit theory diagrams of Fig. 6.
Fig. 9 is the schematic diagram of the light emitting diode of first embodiment of the invention.
Figure 10 is the schematic diagram of the light emitting diode of second embodiment of the invention.
Main element symbol description
| 10 | Substrate |
| 101 | Upper surface |
| 102 | Lower surface |
| 20 | Die bond electrode |
| 201 | First die bond portion |
| 202 | Second die bond portion |
| 203、213 | Groove |
| 204 | Parallel-segment |
| 205 | Linkage section |
| 21 | First connects electrode |
| 211 | Part I |
| 212 | Part II |
| 22 | Second connects electrode |
| 30 | Reflector |
| 31 | Separating part |
| 40 | Wire |
| 41 | First chip |
| 42 | Second chip |
| 50 | Encapsulated layer |
| 60 | Zener diode |
| 100 | Encapsulating structure |
| 200 | Light emitting diode |
Following detailed description of the invention will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Detailed description of the invention
The present invention is described in further detail below in conjunction with the accompanying drawings.
Please refer to Fig. 1-4, the package structure for LED 100 of the present invention includes that substrate 10 and die bond electrode 20, first separated from one another connect electrode 21, second and connect electrode 22.This substrate 10 includes relative upper surface 101 and lower surface 102.The thickness of this die bond electrode the 20, first connection electrode 21 and the second connection electrode 22 is equal with the thickness of this substrate 10 and is embedded in this substrate 10.That is to say, this die bond electrode 20, first connects electrode 21 and the second upper and lower surface connecting electrode 22 flushes with the upper and lower surface 101,102 of this substrate 10 respectively, and all exposes to the upper and lower surface 101,102 of this substrate 10.This die bond electrode 20 includes two parallel-segment 204 and the linkage sections 205 of this two parallel-segment 204 of connection.Die bond electrode 20 presents a concave at the lower surface 102 of substrate 10.This first connects electrode 21 and is positioned corresponding to the position of linkage section 205 of this die bond electrode 20, and is enclosed by the concave of this die bond electrode 20 and set.This second connection electrode 22 is arranged at the right side of this die bond electrode 20.In the present embodiment, this die bond electrode 20 occupy substrate 10 lower surface 102 more than 80% area.This die bond electrode 20, first connects electrode 21 and the second connection electrode 22 is made by the metal that heat conductivility is good.
This die bond electrode 20 includes linkage section 205 upper groove 203 being opened in its concave.This groove 203 is blind slot.Preferably, the groove depth of this groove 203 is equal to the half of the thickness of this die bond electrode 20.The top half of this die bond electrode 20 is divided into the first die bond portion 201 and the second die bond portion 202 by this groove 203.The upper surface 101 of this substrate 10 exposes this separately positioned the first die bond portion 201 and this second die bond portion 202.This first connection electrode 21 includes another groove 213.This groove 213 is also blind slot.Preferably, the groove 213 of this first connection electrode 21 is identical with the groove depth of the groove 203 of this die bond electrode 20 and groove width.This first groove 213 connecting electrode 21 is positioned at middle position and the groove 203 of this die bond electrode 20 that aligns in position of this first connection electrode 21.This first top half connecting electrode 21 is divided into Part I 211 and Part II 212 by this groove 213.The upper surface 101 of this substrate 10 exposes this separately positioned Part I 211 and Part II 212.
This package structure for LED 100 also includes that a reflector 30 is arranged at the upper surface 101 of this substrate 10.This reflector 30 covers this die bond electrode 20, first and connects electrode 21 and the neighboring of the second connection electrode 22.This reflector 30 is made up of such as epoxy-plastic packaging material (EMC), silicon mould mold compound (SMC) contour molecular reflection material.This reflector 30 has the height separating part 31 less than the peripheral body of reflector 30, its groove 203 corresponding to this die bond electrode 20 being arranged at this substrate 10 and this first position of groove 213 being connected electrode 21.This encapsulating structure 100 is separated into two functional areas, left and right by this separating part 31.Wherein these left functional areas expose outside this first die bond electrode 201 and this first Part I 211 being connected electrode 21, and these right functional areas expose outside this second die bond electrode 202, this first connects the Part II 212 of electrode 21 and second be connected electrode 22 with this.It is to be appreciated that this reflector 30 can be integrally formed by identical macromolecular material with this substrate 10, and the two collectively constitutes a macromolecule layer.
Please refer to Fig. 5-6, one first chip 41 is set on this first die bond electrode 201, one second chip 42 is set on this second die bond electrode 202.May optionally utilize some wires 40 and this first chip 41 is electrically connected to this first die bond electrode 201 and this first Part I 211 being connected electrode 21, this second chip 42 is electrically connected to this and first connects the Part II 212 of electrode 21 and second be connected electrode 22 with this.Owing to this first Part I 211 and Part II 212 connecting electrode 21 is actually connected, therefore this first chip 41 and this second chip 42 achieve on this encapsulating structure 100 and are connected in series.
Please refer to Fig. 7-8, one first chip 41 is set on this first die bond electrode 201, one second chip 42 is set on this second die bond electrode 202.May optionally utilize some wires 40 and this first chip 41 is electrically connected to this first die bond electrode 201 and this first Part I 211 being connected electrode 21, this second chip 42 is electrically connected to Part II 212 and this second die bond electrode 202 of this first connection electrode 21, and this second die bond electrode 202 is electrically connected this second connection electrode 22.Owing to this first die bond electrode 201 is actually connected with this second die bond electrode 202, the Part I 211 of this first connection electrode 21 and Part II 212 are the most also connected to, and therefore this first chip 41 and this second chip 42 achieve on this encapsulating structure 100 and be connected in parallel.Thus, by different routing modes, the package structure for LED 100 of the present invention can conveniently realize the series connection between multiple chip 41,42 and parallel relationship, can meet and different go out light demand.
Refer to Fig. 9, an encapsulated layer 50 is set and and covers this first chip 41 and form a light emitting diode 200 with this second chip 42 in this reflector 30.This encapsulated layer 50 is made up of the transparent material such as epoxy resin, silica gel.Also can be doped with fluorescent material in this encapsulated layer 50.In the present embodiment, what this first chip 41 and this second chip 42 were sent is the light beam of the complementary color in white-light spectrum, and therefore this light emitting diode 200 is white light-emitting diodes.
The metal good due to this die bond electrode 20 heat conductivility is made, and occupy most of area of substrate 10, therefore the first chip 41 and the second chip 42 for being arranged on this die bond electrode 20 provide good heat dissipation environment, the heat of this first chip 41 with this second chip 42 is delivered to lower surface in time disperse so that this light emitting diode 200 has more preferable radiating effect.It is made up of epoxy-plastic packaging material (EMC), silicon mould mold compound (SMC) contour molecular reflection material due to this macromolecule layer again, make its reflector 30 reach more than 93% with the reflectance of substrate 10, the light that goes out of this first chip 41 with this second chip 42 is had good reflection.
Referring again to Figure 10, this light emitting diode 200 also includes Zener diode 60.When this first chip 41 implement with this second chip 42 series system be connected time, this Zener diode 60 can be arranged at this selectively and first connect on Part I 211 or the Part II 212 of electrode 21.First connect on electrode 21 rather than die bond electrode 20 or for being connected electrode 22 with the second of extraneous power supply electrical connection owing to this Zener diode 60 is arranged at this; therefore using this Zener diode 60 as anti-static device, the parts in light emitting diode 200 can be implemented antistatic protection.
Claims (10)
1. an encapsulating structure, it is characterised in that: include substrate and be formed in substrate and separated from one another consolidating
Brilliant electrode, first connecting electrode, second connect electrode, this substrate includes relative first surface and the
Two surfaces, this die bond electrode includes the first die bond electrode and the second die bond electrode being connected, and this is first solid
Brilliant electrode and the mutually liftoff first surface exposing to this substrate of the second die bond electrode, this first die bond electrode
With the second surface that this second die bond electrode conjointly exposes to this substrate, die bond electrode is the of substrate
Two surfaces present a concave, and this first connection electrode is by the concave of this die bond electrode
Enclosing and set, encapsulating structure is for installing the first chip and the second chip, and two electrodes of the first chip connect respectively
Being connected to die bond electrode and first and connect electrode, an electrode of the second chip is connected to the first connection electrode,
Another electrode is optionally directly or indirectly attached to the second connection electrode, thus realizes the first chip
And the serial or parallel connection between the second chip.
2. encapsulating structure as claimed in claim 1, it is characterised in that: it is first solid that this first chip is arranged at this
Brilliant electrode, this second chip is arranged at this second die bond electrode.
3. encapsulating structure as claimed in claim 2, it is characterised in that: this die bond electrode includes groove, and this is recessed
This die bond electrode is divided into this first die bond electrode and near the part of the first surface of this substrate by groove
Two die bond electrodes.
4. encapsulating structure as claimed in claim 1, it is characterised in that: this substrate includes relative first surface
With second surface, this first connection electrode includes Part I and the Part II being connected, this first company
The Part I first surface that expose to this substrate mutually liftoff with Part II of receiving electrode, this first company
The Part I of receiving electrode and Part II conjointly expose to the second surface of this substrate.
5. encapsulating structure as claimed in claim 4, it is characterised in that: this first connection electrode includes that another is recessed
Groove, this first connection electrode is divided into this near the part of the first surface of this substrate by this another groove
Part I and this Part II, this first another groove connecting electrode aligns this die bond in position
The groove of electrode.
6. encapsulating structure as claimed in claim 5, it is characterised in that: this die bond electrode includes first be connected
Die bond electrode and the second die bond electrode, this first die bond electrode and the second die bond electrode is mutually liftoff exposes to
The first surface of this substrate, this first die bond electrode and this second die bond electrode conjointly expose to this base
The second surface of plate, this first chip is arranged at this first die bond electrode, and this second chip is arranged at this
Second die bond electrode, this die bond electrode includes groove, this groove by this die bond electrode near this substrate
The part of first surface is divided into this first die bond electrode and the second die bond electrode, and this encapsulating structure also wraps
Including reflector, this reflector includes body and separating part, and this body covers this die bond electrode, the first company
Receiving electrode and second connects the neighboring of electrode, and this separating part is arranged at the solid corresponding to this of this substrate
The groove of brilliant electrode and this first position of another groove being connected electrode.
7. encapsulating structure as claimed in claim 1, it is characterised in that: this die bond electrode be made of metal and
Occupy the area of this substrate more than 80%.
8. comprise a light emitting diode for the encapsulating structure of any one of claim 1-7, also include: the first chip,
Second chip and encapsulated layer, it is characterised in that: two electrodes of this first chip are connected respectively by wire
Being connected to die bond electrode and first and connect electrode, an electrode of this second chip is connected to the first connection electrode,
Another electrode is optionally directly or indirectly attached to the second connection electrode, thus realizes the first chip
And the serial or parallel connection between the second chip.
9. light emitting diode as claimed in claim 8, it is characterised in that: this light emitting diode also includes Zener
Diode, this Zener diode is arranged on this first connection electrode.
10. light emitting diode as claimed in claim 8, it is characterised in that: this first chip, the second chip
By wire and die bond electrode, first it is connected electrode and second and connects electrode and electrically connect.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210551102.3A CN103872030B (en) | 2012-12-18 | Light emitting diode and encapsulating structure thereof | |
| TW101148839A TWI482318B (en) | 2012-12-18 | 2012-12-20 | Light-emitting diode and package structure thereof |
| US14/059,463 US9184358B2 (en) | 2012-12-18 | 2013-10-22 | Lead frame and light emitting diode package having the same |
| US14/876,980 US9620692B2 (en) | 2012-12-18 | 2015-10-07 | Lead frame and light emitting diode package having the same |
| US15/434,173 US9899587B2 (en) | 2012-12-18 | 2017-02-16 | Lead frame and light emitting diode package having the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210551102.3A CN103872030B (en) | 2012-12-18 | Light emitting diode and encapsulating structure thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103872030A CN103872030A (en) | 2014-06-18 |
| CN103872030B true CN103872030B (en) | 2016-11-30 |
Family
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201218359A (en) * | 2010-10-28 | 2012-05-01 | Advanced Optoelectronic Tech | Light emitting diode package structure |
| CN102593113A (en) * | 2011-01-10 | 2012-07-18 | 展晶科技(深圳)有限公司 | Light emitting diode packaging structure and light emitting diode crystal grains thereof |
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201218359A (en) * | 2010-10-28 | 2012-05-01 | Advanced Optoelectronic Tech | Light emitting diode package structure |
| CN102593113A (en) * | 2011-01-10 | 2012-07-18 | 展晶科技(深圳)有限公司 | Light emitting diode packaging structure and light emitting diode crystal grains thereof |
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