CN103871966A - Method for restraining fluorosilicone glass crystal defects - Google Patents
Method for restraining fluorosilicone glass crystal defects Download PDFInfo
- Publication number
- CN103871966A CN103871966A CN201410102247.4A CN201410102247A CN103871966A CN 103871966 A CN103871966 A CN 103871966A CN 201410102247 A CN201410102247 A CN 201410102247A CN 103871966 A CN103871966 A CN 103871966A
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- Prior art keywords
- fluorine
- wafer
- silex glass
- crystal defect
- fluorine silex
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The invention relates to a method for restraining fluorosilicone glass crystal defects. The method includes the following steps: (1) depositing a layer of fluorosilicone glass on the surface of a wafer, (2) conducting plasma treatment on the upper surface of the fluorosilicone glass to form a low-fluorine oxidation layer, and (3) washing the wafer with deionized water. The step (1) and the step (2) are carried out in one same chemical vapor deposition reaction bin. The method has the advantages that after fluorosilicone glass depositing is finished, the plasma treatment is carried out in a same cavity, fluorine on the upper surface of the fluorosilicone glass is reduced, the hydrophilia of the fluorosilicone glass is restrained, the wafer defects are avoided, meanwhile, the deionized water is in reaction with a small amount of fluorine on the surface to form hydrofluoric acid, then the wafer is formed in a washed mode, the effect is further solidified, and the device reliability is improved.
Description
Technical field
The present invention relates to a kind of crystal column surface processing method, particularly a kind of processing method of fluorine silex glass crystal defect.
Background technology
In semi-conductive aluminum manufacturing procedure, fluorine silex glass (FSG:Fluorinated Silicate Glass) has low dielectric constant, and good filling perforation performance and stable mechanical constant replace non-impurity-doped silica (USG) gradually becomes the dielectric layer of zone isolation.But due to the hydrophily of FSG, easily absorb airborne steam and produce crystal defect (crystal defect), affect the reliability of device.Prior art adopts the cover layer such as USG or SRO of growing after FSG deposit to suppress the diffusion of fluorine, but it increases processing step, and cost is higher.
Summary of the invention
The object of this invention is to provide a kind of crystal column surface processing method, better suppress the crystal defect of fluorine silex glass, improve the reliability of device performance.
For solving the problems of the technologies described above, the invention provides a kind of method that suppresses fluorine silex glass crystal defect, comprise the steps:
Step 1, at crystal column surface deposit one deck fluorine silex glass;
Step 2, carries out plasma treatment to the upper surface of fluorine silex glass, forms the low fluorine oxide layer of one deck;
Step 3, rinses wafer with deionized water.
Preferably, the operating condition of plasma treatment is: oxygen flow scope is at 20～200sccm, and radio-frequency power scope is at 50～2000W.
Preferably, low fluorine oxidated layer thickness is at 100～300 Ethylmercurichlorendimides.
Preferably, step 1 and described step 2 are carried out in same chemical vapour deposition reaction cabin.
Preferably, step 3 is carried out in wafer cleaning machine, and the operating condition that wafer rinses is: the wafer range of speeds is at 100～300 revs/min, and scavenging period scope was at 1～5 minute.
The invention has the beneficial effects as follows: after the deposit of fluorine silex glass completes, carry out plasma treatment at same cavity, reduce the fluorine of fluorine silex glass upper surface, suppress its hydrophily, prevent crystal defect, utilize the deionized water fluorine a small amount of with surface to react simultaneously, form hydrofluoric acid, be rinsed out subsequently wafer, further lasting effects, the reliability of raising device.
Accompanying drawing explanation
Fig. 1 is a kind of embodiment of the method schematic flow sheet that suppresses fluorine silex glass crystal defect of the present invention.
Embodiment
Below in conjunction with accompanying drawing, principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
Fig. 1 is the method flow schematic diagram of the inhibition fluorine silex glass crystal defect of one embodiment of the invention, and as shown in the figure, a kind of method that suppresses fluorine silex glass crystal defect, comprises the steps:
Step 1, at crystal column surface deposit one deck fluorine silex glass;
Step 2, carries out plasma treatment to the upper surface of fluorine silex glass, forms the low fluorine oxide layer of one deck;
Described step 1 and step 2 are carried out in same chemical vapour deposition reaction cabin; Form the method for fluorine silex glass by existing these those skilled in the art are known, repeat no more; The operating condition of the upper surface of fluorine silex glass being carried out to plasma treatment is: oxygen flow scope is at 20～200sccm, and radio-frequency power scope is at 50～2000W; The low fluorine oxidated layer thickness scope forming is at 100～300 Ethylmercurichlorendimides.
Step 3, is positioned over wafer in wafer cleaning device, wafer is rinsed with deionized water, and the operating condition of flushing is: the wafer range of speeds is at 100～300 revs/min, and scavenging period scope was at 1～5 minute.
The above implementation step and method have only been expressed one embodiment of the present invention, and description is comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.Do not departing under the prerequisite of patent design of the present invention, the distortion of doing and improvement should all belong to the protection range of patent of the present invention.
Claims (5)
1. a method that suppresses fluorine silex glass crystal defect, comprises the steps:
Step 1, at crystal column surface deposit one deck fluorine silex glass;
Step 2, carries out plasma treatment to the upper surface of fluorine silex glass, forms the low fluorine oxide layer of one deck;
Step 3, rinses wafer with deionized water.
2. a kind of method that suppresses fluorine silex glass crystal defect according to claim 1, is characterized in that, the operating condition of described plasma treatment is: oxygen flow scope is at 20～200sccm, and radio-frequency power scope is at 50～2000W.
3. a kind of method that suppresses fluorine silex glass crystal defect according to claim 1, is characterized in that, described low fluorine oxidated layer thickness is at 100～300 Ethylmercurichlorendimides.
4. according to a kind of method that suppresses fluorine silex glass crystal defect described in claim 1 or 2 or 3, it is characterized in that, described step 1 and described step 2 are carried out in same chemical vapour deposition reaction cabin.
5. according to a kind of method that suppresses fluorine silex glass crystal defect described in claim 1 or 2 or 3, it is characterized in that, described step 3 is carried out in wafer cleaning machine, and the operating condition that described wafer rinses is: the wafer range of speeds is at 100～300 revs/min, and scavenging period scope was at 1～5 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410102247.4A CN103871966B (en) | 2014-03-19 | 2014-03-19 | Method for restraining fluorosilicone glass crystal defects |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410102247.4A CN103871966B (en) | 2014-03-19 | 2014-03-19 | Method for restraining fluorosilicone glass crystal defects |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103871966A true CN103871966A (en) | 2014-06-18 |
| CN103871966B CN103871966B (en) | 2017-05-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410102247.4A Active CN103871966B (en) | 2014-03-19 | 2014-03-19 | Method for restraining fluorosilicone glass crystal defects |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6008120A (en) * | 1998-07-22 | 1999-12-28 | Siemens Aktiengesellschaft | Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication |
| CN1411041A (en) * | 2001-09-26 | 2003-04-16 | 联华电子股份有限公司 | Method of treating fluorosilicic glass surface layer |
| CN1844003A (en) * | 2006-04-12 | 2006-10-11 | 上海集成电路研发中心有限公司 | Method for preventing fluorine diffusion in manufacturing process of fluorine-silicon glass |
| CN101246823A (en) * | 2007-02-13 | 2008-08-20 | 中芯国际集成电路制造(上海)有限公司 | Method for preventing crystal defect on fluorine-doped oxide film surface |
-
2014
- 2014-03-19 CN CN201410102247.4A patent/CN103871966B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6008120A (en) * | 1998-07-22 | 1999-12-28 | Siemens Aktiengesellschaft | Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication |
| CN1411041A (en) * | 2001-09-26 | 2003-04-16 | 联华电子股份有限公司 | Method of treating fluorosilicic glass surface layer |
| CN1844003A (en) * | 2006-04-12 | 2006-10-11 | 上海集成电路研发中心有限公司 | Method for preventing fluorine diffusion in manufacturing process of fluorine-silicon glass |
| CN101246823A (en) * | 2007-02-13 | 2008-08-20 | 中芯国际集成电路制造(上海)有限公司 | Method for preventing crystal defect on fluorine-doped oxide film surface |
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| CN103871966B (en) | 2017-05-10 |
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