CN103871966B - Method for restraining fluorosilicone glass crystal defects - Google Patents

Method for restraining fluorosilicone glass crystal defects Download PDF

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Publication number
CN103871966B
CN103871966B CN201410102247.4A CN201410102247A CN103871966B CN 103871966 B CN103871966 B CN 103871966B CN 201410102247 A CN201410102247 A CN 201410102247A CN 103871966 B CN103871966 B CN 103871966B
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China
Prior art keywords
wafer
fluorine
carried out
silica glass
fluorosilicone glass
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CN201410102247.4A
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Chinese (zh)
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CN103871966A (en
Inventor
洪齐元
黄海
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Wuhan Xinxin Semiconductor Manufacturing Co Ltd
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Wuhan Xinxin Semiconductor Manufacturing Co Ltd
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Priority to CN201410102247.4A priority Critical patent/CN103871966B/en
Publication of CN103871966A publication Critical patent/CN103871966A/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

The invention relates to a method for restraining fluorosilicone glass crystal defects. The method includes the following steps: (1) depositing a layer of fluorosilicone glass on the surface of a wafer, (2) conducting plasma treatment on the upper surface of the fluorosilicone glass to form a low-fluorine oxidation layer, and (3) washing the wafer with deionized water. The step (1) and the step (2) are carried out in one same chemical vapor deposition reaction bin. The method has the advantages that after fluorosilicone glass depositing is finished, the plasma treatment is carried out in a same cavity, fluorine on the upper surface of the fluorosilicone glass is reduced, the hydrophilia of the fluorosilicone glass is restrained, the wafer defects are avoided, meanwhile, the deionized water is in reaction with a small amount of fluorine on the surface to form hydrofluoric acid, then the wafer is formed in a washed mode, the effect is further solidified, and the device reliability is improved.

Description

A kind of method for suppressing fluorine silica glass crystal defect
Technical field
The present invention relates to a kind of crystal column surface processing method, more particularly to a kind of process side of fluorine silica glass crystal defect Method.
Background technology
In the aluminum manufacturing procedure of semiconductor, fluorine silica glass (FSG：Fluorinated Silicate Glass) there is low Jie Electric constant, good filling perforation performance and stable mechanical constant has gradually replaced non-impurity-doped silica (USG) to become zone isolation Dielectric layer.But due to the hydrophily of FSG, the steam in easy absorption air produces crystal defect (crystal defect), Affect the reliability of device.Prior art suppresses the diffusion of fluorine using the coatings such as USG or SRO are grown after FSG deposits, But it increases processing step, relatively costly.
The content of the invention
It is an object of the invention to provide a kind of crystal column surface processing method, preferably suppresses the crystal defect of fluorine silica glass, Improve the reliability of device performance.
To solve above-mentioned technical problem, the invention provides a kind of method for suppressing fluorine silica glass crystal defect, including such as Lower step：
Step one, in crystal column surface one layer of fluorine silica glass is deposited；
Step 2, to the upper surface of fluorine silica glass plasma treatment is carried out, and forms one layer low fluorine oxide layer；
Step 3, deionized water is rinsed to wafer.
Preferably, the operating condition of plasma treatment is：Oxygen flow scope is in 20～200sccm, radio frequency power range In 50～2000W.
Preferably, low fluorine oxidated layer thickness is in 100～300 Ethylmercurichlorendimides.
Preferably, step one and the step 2 are carried out in same chemical vapour deposition reaction cabin.
Preferably, step 3 is carried out in wafer cleaning machine, and the operating condition that wafer is rinsed is:The wafer range of speeds exists 100～300 revs/min, scavenging period scope was at 1～5 minute.
The invention has the beneficial effects as follows：After the completion of the deposit of fluorine silica glass, plasma treatment is carried out in same cavity, reduce fluorine The fluorine of silica glass upper surface, suppresses its hydrophily, prevents crystal defect, while anti-using a small amount of fluorine in deionized water and surface Should, hydrofluoric acid is formed, wafer is subsequently flushed, further lasting effects improve the reliability of device.
Description of the drawings
Fig. 1 is a kind of embodiment of the method schematic flow sheet of suppression fluorine silica glass crystal defect of the present invention.
Specific embodiment
The principle and feature of the present invention are described below in conjunction with accompanying drawing, example is served only for explaining the present invention, and It is non-for limiting the scope of the present invention.
Fig. 1 is the method flow schematic diagram of the suppression fluorine silica glass crystal defect of one embodiment of the invention, as illustrated, A kind of method for suppressing fluorine silica glass crystal defect, comprises the steps：
Step one, in crystal column surface one layer of fluorine silica glass is deposited；
Step 2, to the upper surface of fluorine silica glass plasma treatment is carried out, and forms one layer low fluorine oxide layer；
The step one and step 2 are carried out in same chemical vapour deposition reaction cabin；Formed fluorine silica glass method be Known to existing art personnel, repeat no more；The operating condition of plasma treatment is carried out to the upper surface of fluorine silica glass For：, in 20～200sccm, radio frequency power range is in 50～2000W for oxygen flow scope；The low fluorine oxidated layer thickness scope for being formed In 100～300 Ethylmercurichlorendimides.
Step 3, wafer is positioned in wafer cleaning device, and deionized water is rinsed to wafer, the operation of flushing Condition is:, at 100～300 revs/min, scavenging period scope was at 1～5 minute for the wafer range of speeds.
The above implementation steps and method only express one embodiment of the present invention, and description is more concrete and detailed Therefore carefully, but the restriction to the scope of the claims of the present invention can not be interpreted as.On the premise of without departing from inventional idea of the present invention, The deformation and improvement made should belong to the protection domain of patent of the present invention.

Claims (1)

1. a kind of method for suppressing fluorine silica glass crystal defect, comprises the steps：
Step one, in crystal column surface one layer of fluorine silica glass is deposited；
Step 2, to the upper surface of fluorine silica glass plasma treatment is carried out, and forms one layer low fluorine oxide layer；
Step 3, deionized water is rinsed to wafer；
The operating condition of the plasma treatment is：Oxygen flow scope in 20～200sccm, radio frequency power range 50～ 2000W；
The low fluorine oxidated layer thickness is in 100～300 Ethylmercurichlorendimides；
The step one and the step 2 are carried out in same chemical vapour deposition reaction cabin；
The step 3 is carried out in wafer cleaning machine, and the operating condition that the wafer is rinsed is:The wafer range of speeds 100～ 300 revs/min, scavenging period scope was at 1～5 minute.
CN201410102247.4A 2014-03-19 2014-03-19 Method for restraining fluorosilicone glass crystal defects Active CN103871966B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410102247.4A CN103871966B (en) 2014-03-19 2014-03-19 Method for restraining fluorosilicone glass crystal defects

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410102247.4A CN103871966B (en) 2014-03-19 2014-03-19 Method for restraining fluorosilicone glass crystal defects

Publications (2)

Publication Number Publication Date
CN103871966A CN103871966A (en) 2014-06-18
CN103871966B true CN103871966B (en) 2017-05-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410102247.4A Active CN103871966B (en) 2014-03-19 2014-03-19 Method for restraining fluorosilicone glass crystal defects

Country Status (1)

Country Link
CN (1) CN103871966B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1411041A (en) * 2001-09-26 2003-04-16 联华电子股份有限公司 Method of treating fluorosilicic glass surface layer
CN1844003A (en) * 2006-04-12 2006-10-11 上海集成电路研发中心有限公司 Method for preventing fluorine diffusion in manufacturing process of fluorine-silicon glass

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6300672B1 (en) * 1998-07-22 2001-10-09 Siemens Aktiengesellschaft Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication
CN101246823A (en) * 2007-02-13 2008-08-20 中芯国际集成电路制造(上海)有限公司 Method for preventing crystal defect on fluorine-doped oxide film surface

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1411041A (en) * 2001-09-26 2003-04-16 联华电子股份有限公司 Method of treating fluorosilicic glass surface layer
CN1844003A (en) * 2006-04-12 2006-10-11 上海集成电路研发中心有限公司 Method for preventing fluorine diffusion in manufacturing process of fluorine-silicon glass

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