CN103871872A - 一种硅片热处理恒温区的固定方法 - Google Patents

一种硅片热处理恒温区的固定方法 Download PDF

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CN103871872A
CN103871872A CN201210545483.4A CN201210545483A CN103871872A CN 103871872 A CN103871872 A CN 103871872A CN 201210545483 A CN201210545483 A CN 201210545483A CN 103871872 A CN103871872 A CN 103871872A
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flat
silicon carbide
temperature zone
temperature region
constant
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刘佐星
王海涛
鲁进军
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You Yan Semi Materials Co., Ltd.
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Grinm Semiconductor Materials Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract

本发明提供一种硅片热处理恒温区的固定方法，预先测出退火炉内恒温区的位置，并在碳化硅舟桨上标识出与该位置对应的区域，然后将两个固定器分别固定在碳化硅舟桨上该区域的两端。本发明通过在碳化硅舟桨对应于退火炉内恒温区的区域两端设置固定器，对恒温区进行明确的固定，起到防呆防错的效果，简化了操作，降低了管理的成本，彻底解决了硅片超出恒温区造成电阻率不合格的问题。

Description

一种硅片热处理恒温区的固定方法
技术领域
本发明涉及一种硅片热处理恒温区的固定方法。
背景技术
硅片是现代超大规模集成电路的主要衬底材料，一般通过拉晶、切片、倒角、磨片、腐蚀、热处理、抛光、清洗等工艺过程制作而成。硅片热处理是硅器件衬底加工过程中一个重要的工序，热处理可以使硅片中的氧形成沉积，从而形成新施主，从而稳定硅片的电阻率，对集成电路制备性能有着极为重要的影响。
硅片在热处理过程中最主要的工艺参数是热处理温度650℃，热处理需要在一个恒定且条件统一的温度下进行，但是由于热处理炉的温场是有限的，如果硅片不能在恒定的温场下进行退火，则无法达到热处理的效果，导致氧不能完全沉淀，电阻率的稳定性和均匀性都会受到很大的影响，大大降低了退火的效率和产品率。
传统的恒温区固定方法是标识标记法，在舟桨与设备相对的位置对退火炉内的恒温区对应位置用标签进行标识定位，如图1所示，所做标识为A、B。这种方法在实际操作中产生诸多问题：1、舟桨与设备的位置会有相对性，由于人员拉出舟桨不到位，则导致舟桨对应恒温区的位置变化，从而使硅片的位置超出恒温区，导致退火电阻率的不合格；2、人员容易忽视标识的位置，操作的随意性导致人员对石英舟不能很好按照标识进行摆放，导致个别硅片超出恒温区的范围，从而引起退火电阻率不合格。
发明内容
本发明的目的在于提供一种硅片热处理恒温区的固定方法，在硅片热处理过程中，防止人员误操作导致的硅片的电阻率均匀性不合格。
为实现上述目的，本发明采用以下技术方案：
一种硅片热处理恒温区的固定方法，预先测出退火炉内恒温区的位置，并在碳化硅舟桨上标识出与该位置对应的区域，然后将两个固定器分别固定在碳化硅舟桨上该区域的两端。
所述固定器为石英材质，形状为梯形实心结构，该梯形实心结构的底面为粗糙面，上表面及侧面为光滑面。
所述固定器的底面(粗糙面)与碳化硅舟浆的表面(磨砂面)之间的摩擦力可以实现固定器与碳化硅舟浆之间的相对固定。
本发明的优点在于：
本发明通过在碳化硅舟桨上对应于恒温区的区域两端设置固定器，对退火炉内的恒温区进行确定，起到防呆防错的效果，简化了操作，降低了管理的成本，彻底解决了硅片超出恒温区造成电阻率不合格的问题。
附图说明
图1为传统的恒温区标记法中标识的恒温区位置的示意图。
图2为本发明的恒温区固定器的结构示意图。
图3为采用本发明的恒温区固定的效果图。
具体实施方式
本发明的硅片热处理恒温区的固定方法包括：通过炉管温区测试装置预先测出退火炉内恒温区的位置，并在碳化硅舟桨上标识出与该位置对应的区域，然后将两个固定器分别固定在碳化硅舟桨上该区域的两端。
如图2所示，固定器选择梯形结构的石英体，其底面为粗糙面，上表面及侧面为光滑面，该粗糙面与碳化硅舟浆的上表面(磨砂面)之间的摩擦力可以实现二者之间的相对固定。固定器的尺寸根据碳化硅舟桨的尺寸进行设计。
如图3所示，石英舟3置于碳化硅舟浆内两个固定器1、2之间的区域内，碳化硅舟桨经传动装置送入退火炉内，两个固定器1、2之间的区域恰与退火炉内的恒温区相对应，使得石英舟3完全处于恒温区内，硅片在恒定的温场下进行退火，大大提高了电阻率的稳定性和均匀性，大大提高了退火的效率和产品率，电阻率不合格比率由原来的3.25％降到0。
由于固定器在碳化硅舟桨上准确的定位出与退火炉恒温区对应的区域，使得操作人员每次操作均能准确的将碳化硅舟桨拉至准确的位置，起到防呆防错的效果，简化了操作，降低了管理的成本，彻底解决了硅片超出恒温区造成电阻率不合格的问题。

Claims (3)

1.一种硅片热处理恒温区的固定方法，其特征在于，预先测出退火炉内恒温区的位置，并在碳化硅舟桨上标识出与该位置对应的区域，然后将两个固定器分别固定在碳化硅舟桨上该区域的两端。
2.根据权利要求1所述的硅片热处理恒温区的固定方法，其特征在于，所述固定器为石英材质，形状为梯形实心结构，该梯形实心结构的底面为粗糙面，上表面及侧面为光滑面。
3.根据权利要求2所述的硅片热处理恒温区的固定方法，其特征在于，所述固定器与碳化硅舟桨通过二者之间的摩擦力实现相对固定。
CN201210545483.4A 2012-12-14 2012-12-14 一种硅片热处理恒温区的固定方法 Pending CN103871872A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200432A (ja) * 1983-04-28 1984-11-13 Toshiba Ceramics Co Ltd ウエハ−ボ−ト用の搬送用具
EP0158570A1 (fr) * 1984-03-12 1985-10-16 Servin S.A. Appareil d'enfournement de nacelles-supports de disques de silicium à l'intérieur d'un four de diffusion gazeuse, utilisé pour la fabrication de micro-circuits intégrés
US4888994A (en) * 1987-11-18 1989-12-26 Tel Sagami Limited Method of carrying objects into and from a furnace, and apparatus for carrying objects into and from a furnace

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200432A (ja) * 1983-04-28 1984-11-13 Toshiba Ceramics Co Ltd ウエハ−ボ−ト用の搬送用具
EP0158570A1 (fr) * 1984-03-12 1985-10-16 Servin S.A. Appareil d'enfournement de nacelles-supports de disques de silicium à l'intérieur d'un four de diffusion gazeuse, utilisé pour la fabrication de micro-circuits intégrés
US4888994A (en) * 1987-11-18 1989-12-26 Tel Sagami Limited Method of carrying objects into and from a furnace, and apparatus for carrying objects into and from a furnace

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