CN103871812B - A kind of ion implantation device - Google Patents
A kind of ion implantation device Download PDFInfo
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- CN103871812B CN103871812B CN201210533306.4A CN201210533306A CN103871812B CN 103871812 B CN103871812 B CN 103871812B CN 201210533306 A CN201210533306 A CN 201210533306A CN 103871812 B CN103871812 B CN 103871812B
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- Prior art keywords
- ion implanting
- implantation device
- injection
- gas
- ion implantation
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 31
- 238000002347 injection Methods 0.000 claims abstract description 47
- 239000007924 injection Substances 0.000 claims abstract description 47
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 13
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052738 indium Inorganic materials 0.000 claims description 19
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000002309 gasification Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 7
- 150000002739 metals Chemical class 0.000 abstract description 3
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 40
- 150000002500 ions Chemical class 0.000 description 38
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 229910001449 indium ion Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 208000036626 Mental retardation Diseases 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Abstract
The invention discloses a kind of ion implantation device, including: ion implanting chamber, air inlet, gas outlet, chip bench, radio-frequency power supply, the pulse power；Wherein, described ion implantation device also includes: injecting source, described injection source is connected with described air inlet, for injecting metal gas source to described ion implanting chamber；Heater, described heater is connected with described injection source, described heater is for gasifying the metal in described injection source or metal-oxide, the present invention is by utilizing the different characteristic of metal or metal-oxide saturated vapor pressure at different temperatures, metal-oxide in injection source is gasificated into elemental metals gas, and then achieve and effectively produce metallic plasma, there is the technique effect that ion implanting quality is high.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly to the ion implantation device of a kind of plasma immersion.
Background technology
Traditional beamline ion implanters injection (Ion Beam Ion Implantation, IBII) is widely used in material and changes
Property and semiconductor technology, along with constantly the increasing and cmos device characteristic size of sizes of substrate in semiconductor technology
Constantly reduce so that IBII is faced with formidable challenges, as mutually arranged due to like charges when mental retardation shallow junction injects
Scold the divergence of ion beam caused, scan-type be infused in sizes of substrate bigger time the cost that brings rise high.
Plasma immersion and ion implantation (Plasma ImmersionIonImplantation, PIII) technology is considered
It is to substitute IBII to make a new doping techniques of ultra-shallow junctions, comparatively speaking, plasma immersion ion
Inject (PIII), than traditional beamline ion implanters injection (IBII), there is more advantages.
Present inventor, during realizing the embodiment of the present application technical scheme, at least finds prior art
The following technical problem of middle existence:
In traditional PIII system, produce normally gaseous source, source (such as phosphine, the borine of plasma
Deng), needs adjust work function to silicon chip injection metal ion when, traditional PI II system is due to nothing
Method effectively produces metallic plasma, and therefore traditional PI II system has its limitation injected.So being badly in need of sending out
The new PIII system of bright a kind of special injection metal ion, meets the requirement of integrated circuit technology.
Summary of the invention
It is an object of the invention to provide a kind of ion implantation device, solve of the prior art cannot be effective
Produce the technical problem of metallic plasma, there is the technique effect that ion implanting quality is high.
In order to achieve the above object, the technical solution used in the present invention is:
A kind of ion implantation device, including: an ion implanting chamber, for carrying to described ion implantation device
Environment is injected for vacuum；One air inlet, described air inlet is located on the first limit of described ion implanting chamber,
Described air inlet is for providing injection gas to described ion implantation device；One gas outlet, described gas outlet sets
On the second limit of described ion implanting chamber, described gas outlet for described injection gas detached described from
Sub-injecting chamber, and, described first limit and described second limit are opposite side；One chip bench, described chip bench bag
Including Part I and Part II, wherein said Part I is positioned at described ion implanting chamber, be used for
Described ion implanting disposes print to be implanted；Described Part II is positioned at outside described ion implanting chamber；One penetrates
Frequency power, described radio-frequency power supply is connected with the Part II of described chip bench, for putting to described injection gas
Electricity produces plasma and provides power supply；One pulse power, the described pulse power is with described ion implanting chamber even
Connect, for providing the pulse power to described ion implanting；Wherein, described ion implantation device also includes: one
Injection source, described injection source is connected with described air inlet, for injecting metal gas to described ion implanting chamber
Body source；One heater, described heater is connected with described injection source, and described heater is for by institute
State the metal-oxide gasification in injection source.
Further, the oxide that metal-oxide is indium in described injection source.
Further, described ion implantation device also includes: a sundstrand pump, and described sundstrand pump is given vent to anger with described
Mouth connects, and described sundstrand pump is for taking away reacted injection gas by gas outlet.
Further, described heater is positioned at the junction of described air inlet and described injection source.
Further, described ion implantation device also includes: a cooling system, and described cooling system is for right
Whole ion implantation device cools down.
Compared with prior art, what technical solution of the present invention produced has the beneficial effect that
The present invention by utilizing heater that the metal-oxide in injection source is gasificated into elemental metals gas,
And then achieve and effectively produce metallic plasma, there is the technique effect that ion implanting quality is high.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of ion implantation device in the embodiment of the present invention；
Detailed description of the invention
A kind of ion implantation device in the embodiment of the present invention, by heater by the metal oxygen in injection source
Compound is gasificated into elemental metals gas, and then achieves and effectively produce metallic plasma, has ion implanting
The technique effect that quality is high.
Embodiment one:
As described in Figure 1, a kind of ion implantation device in the embodiment of the present invention, including: ion implanting chamber 1,
Air inlet 2, gas outlet 3, chip bench 4, radio-frequency power supply 5, the pulse power 6, wherein,
Ion implanting chamber 1 is for providing vacuum to inject environment to ion implantation device；
Air inlet 2 is located on the first limit of described ion implanting chamber 1, and air inlet 2 is for ion implanting
Equipment provides and injects gas；
Gas outlet 3 is located on the second limit of described ion implanting chamber 1, and gas outlet 3 will be for injecting gas
Detach ion implanting chamber 1, and, described first limit and described second limit are opposite side；As it is shown in figure 1, first
The opposite side on limit and the second limit arranges and can make the air-flow of air inlet 2 after ion implanting, and following current is from giving vent to anger
Mouth 3 flows out, reaches preferably ion implanting effect.Further, at gas outlet 4, it is provided with sundstrand pump 8,
And be connected with gas outlet 4, sundstrand pump 8 can include mechanical pump and molecular pump, and sundstrand pump 8 is anti-for injecting
Injection gas after should is taken away.
Chip bench 4 includes Part I 41 and Part II 42, and wherein Part I 41 is positioned at ion implanting
In chamber 1, for disposing print 7 to be implanted to ion implanting；Part II 42 is positioned at ion implanting chamber
Outside 1；It should be noted that the print to be implanted 7 in the embodiment of the present invention can be silicon chip, certainly this
Bright embodiment does not limit concrete type.
Wherein, described print to be implanted has the first face 71 and the second face 72, wherein area in the first face 71
Area more than described second face 72；And, gas flow has first direction a；
The Part I 41 of chip bench 4 makes the first face 71 of print 7 to be implanted in the face of injecting gas flow
First direction a, and first of print to be implanted 7 be second direction, second direction with inject gas flow
First direction a different.Further, angle, θ between first direction a and second direction as it is shown in figure 1,
May be greater than 0 degree, less than or equal to 90 degree.Wherein, in order to preferably realize reaching to avoid without ionization
Metallic particles falls on print 7 to be implanted, and first direction a and second direction are 90 degree of optimums.Concrete next
Saying, the Part I 41 of chip bench 4 can include electrode chuck, and this described electrode chuck sets for card and waits to note
Enter print 7, and realize avoiding enter into described ion implanting chamber by the position relationship of electrode chuck with described air-flow
The indium granule without ionization in room falls on print to be implanted.
The pulse power 6 is connected with the Part II 42 of described chip bench 4, injects gas discharge generation for giving
Plasma provides power supply；Further, radio-frequency power supply 5 can be produced source 51 and radio frequency L-type by radio frequency
Orchestration 52 forms.The pulse power 6 is connected with described ion implanting chamber 1, for providing arteries and veins to ion implanting
Rush power supply；Specifically, under the effect of radio-frequency power supply 5, inject gas and put by the way of ICP discharges
Electricity produces highdensity plasma gas, the pulse that the ion in plasma gas is produced by the pulse power 6
The effect of voltage, accelerates to be injected in print 7 to be implanted, thus the doping realizing ion is injected.
Further, ion implantation device may also include injection source 9, and this injection source 9 is connected with air inlet 2,
When the source injected in injection source 9 is metal-oxide, use structure as shown in Figure 1.
Specifically, ion implantation device may also include heater 10, this heater 10 and injection source 9
Connect, for heating described injection gas before injecting gas and entering described ion implanting chamber 1.Concrete next
Saying, be metal-oxide when injecting in source 9, when being such as the oxide of indium, heater 10 is positioned at air inlet
Mouth 2 and the junction injecting source 9, for realizing the oxide gas of the oxide gasification indium of indium, and then
The variations in temperature of regulation heater 10, is gasificated into simple substance indium G&O, Qi Zhongjia by the oxide of indium
Thermal 10 can be distillator or other indium source can be heated to the equipment of uniform temperature.
It should be noted that the indium oxide that the metal-oxide inserted in injection source 9 can be [needs
Bright, the embodiment of the present invention does not limit the concrete metal-oxide oxide as indium, as long as can be real
Other metal-oxides of the existing present invention are all within protection scope of the present invention].
Further, ion implantation device also includes cooling system [not marking in figure], and this cooling system is used for
Whole ion implantation device is cooled down, the cooling of such as molecular pump, the cooling etc. of injecting electrode.
Embodiment 2
In order to preferably explain the structure of the embodiment of the present invention, process will be realized from the embodiment of the present invention below
It is explained.
When the ion implantation device of the present invention works, first print 7 to be implanted is put in ion implanting chamber 1
On chip bench 4, then it is rapidly reached the basis needed for injection experiments by injecting ions into the vacuum in chamber 1
(such as 1 × 10-4Pa or 1 × 10-5Pa, it should be noted that the embodiment of the present invention does not limit specifically end vacuum
Vacuum, as long as the vacuum meeting injection experiments requirement is all protection scope of the present invention), then pass through
Air inlet 2 is passed through injection gas.Under the effect of radio-frequency power supply 5, inject gas produced by the electric discharge of ICP discharge mode
Raw high-density plasma.Add under the effect of the pulsed bias that the ion in plasma produces at the pulse power 6
Speed is injected in print 7 to be implanted, thus realizes ion doping and inject.Injection gas after injection is by giving vent to anger
The sundstrand pumps 8 that mouth 3 is combined by mechanical pump, molecular pump are taken away.
Meanwhile, the injection source 9 connected at air inlet 2 and heater 10, wherein first of heater
Dividing need to be by oxide (such as InO or In of the indium in injection source 92O) 300 DEG C to 700 DEG C it are heated to, raw
Becoming Indium sesquioxide. or the sub-indium gas of oxidation, the Part II of heater is by appendix internal oxidition indium gas or oxidation
Sub-indium gas is heated to more than 750 DEG C, and Indium sesquioxide. gas or the sub-indium gas of oxidation now are subject to outside air inlet 2
Under the heating of the secondary sector of heater, decomposes becomes simple substance indium G&O.
The one or more technical schemes provided in the embodiment of the present application, at least have the following technical effect that or excellent
Point:
1, by adding injection source and heater in the embodiment of the present invention, by the indium in heating injection source
Oxide to 300 DEG C between 700 DEG C so that it is produce Indium sesquioxide. gas, enter ion at Indium sesquioxide. gas
Heat more than 750 DEG C during injecting chamber and make it resolve into simple substance indium gas, and under conditions of radio-frequency power supply discharges
Produce indium ion, it is achieved thereby that the injection of metal plasma.
2, by using being disposed vertically of electrode chuck in the embodiment of the present invention, realize under gravity avoiding
Enter the indium metal granule without ionization of ion implanting chamber fall silicon chip on electrode chuck it
On, thus ensure that high-quality indium ion injects.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for ability
For the technical staff in territory, the present invention can have various modifications and variations.All in the spirit and principles in the present invention
Within, any modification, equivalent substitution and improvement etc. made, should be included in protection scope of the present invention it
In.
Claims (2)
1. an ion implantation device, including:
One ion implanting chamber, for providing vacuum to inject environment to described ion implantation device；
One air inlet, described air inlet is located on the first limit of described ion implanting chamber, described air inlet
Mouth is for providing injection gas to described ion implantation device；
One gas outlet, described gas outlet is located on the second limit of described ion implanting chamber, described in give vent to anger
Mouthful for described injection gas is detached described ion implanting chamber, and, described first limit and described the
Two limits are opposite side；
One chip bench, described chip bench includes Part I and Part II, wherein said Part I
It is positioned at described ion implanting chamber, for disposing print to be implanted to described ion implanting；Described
Two parts are positioned at outside described ion implanting chamber；
One radio-frequency power supply, described radio-frequency power supply is connected with the Part II of described chip bench, for institute
State injection gas discharge and plasma offer power supply is provided；
One pulse power, the described pulse power is connected with described ion implanting chamber, for described from
Son injects provides the pulse power；
Wherein, described ion implantation device also includes:
One injects source, and described injection source is connected with described air inlet, for described ion implanting chamber
Inject metal gas source；
One heater, described heater is connected with described injection source, and described heater is used for will
Metal-oxide gasification in described injection source；The oxidation that metal-oxide is indium in described injection source
Thing；Described ion implantation device also includes:
One sundstrand pump, described sundstrand pump is connected with described gas outlet, and described sundstrand pump is for by giving vent to anger
Reacted injection gas is taken away by mouth；Described heater is positioned at described air inlet and described injection source
Junction.
2. a kind of ion implantation device as claimed in claim 1, it is characterised in that described ion
Injection device also includes:
One cooling system, described cooling system is for cooling down whole ion implantation device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210533306.4A CN103871812B (en) | 2012-12-11 | 2012-12-11 | A kind of ion implantation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210533306.4A CN103871812B (en) | 2012-12-11 | 2012-12-11 | A kind of ion implantation device |
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| Publication Number | Publication Date |
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| CN103871812A CN103871812A (en) | 2014-06-18 |
| CN103871812B true CN103871812B (en) | 2016-09-28 |
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| CN201210533306.4A Active CN103871812B (en) | 2012-12-11 | 2012-12-11 | A kind of ion implantation device |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104392883A (en) * | 2014-10-22 | 2015-03-04 | 常州博锐恒电子科技有限公司 | Solid feeding method of implantation machine |
| US20160322198A1 (en) * | 2015-04-30 | 2016-11-03 | Infineon Technologies Ag | Ion Source for Metal Implantation and Methods Thereof |
| CN105734517B (en) * | 2016-03-08 | 2018-05-25 | 安德信微波设备有限公司 | A kind of building method of metal gas element injected system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101142663A (en) * | 2004-11-19 | 2008-03-12 | 科学技术研究院 | Doped metal oxide films and systems for fabricating the same |
| CN102312210A (en) * | 2010-07-05 | 2012-01-11 | 中国科学院微电子研究所 | Plasma immersion ion injection system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3897620B2 (en) * | 2002-03-14 | 2007-03-28 | 三菱重工業株式会社 | High frequency power supply structure and plasma CVD apparatus including the same |
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- 2012-12-11 CN CN201210533306.4A patent/CN103871812B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101142663A (en) * | 2004-11-19 | 2008-03-12 | 科学技术研究院 | Doped metal oxide films and systems for fabricating the same |
| CN102312210A (en) * | 2010-07-05 | 2012-01-11 | 中国科学院微电子研究所 | Plasma immersion ion injection system |
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| CN103871812A (en) | 2014-06-18 |
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Effective date of registration: 20190529 Address after: Room 820, 8th Floor, Building 1, 13 Guocheng Road, Shunqing District, Nanchong City, Sichuan Province Patentee after: Zhongke Jiuwei Technology Co.,Ltd. Address before: 100029 Microelectronics Institute, Chinese Academy of Sciences, 3 north earth road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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Denomination of invention: An ion implantation device Effective date of registration: 20231109 Granted publication date: 20160928 Pledgee: Sichuan Tianfu Bank Co.,Ltd. Business Department Pledgor: Zhongke Jiuwei Technology Co.,Ltd. Registration number: Y2023980064475 |