CN103855199B - Reverse conducting type IGBT device - Google Patents
Reverse conducting type IGBT device Download PDFInfo
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- CN103855199B CN103855199B CN201210501722.6A CN201210501722A CN103855199B CN 103855199 B CN103855199 B CN 103855199B CN 201210501722 A CN201210501722 A CN 201210501722A CN 103855199 B CN103855199 B CN 103855199B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000009413 insulation Methods 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 230000008901 benefit Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000003139 buffering effect Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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Abstract
The embodiment of the invention discloses a reverse conducting type insulated gate bipolar transistor (IGBT) device comprising a semiconductor substrate, a buffer layer formed in the semiconductor substrate, an insulated structure formed in the buffer layer, and a collector structure formed at the surface of the buffer layer. The collector structure includes a collecting region and a short circuit region; and the doping types of the collecting region and the short circuit region are different and the collecting region and the short circuit region are respectively located at the two sides of the insulated structure. Therefore, the insulated structure enables potentials of the collecting region and the short circuit region to be isolated to the certain extent; and thus the RC-IGBT device enters the traditional IGBT mode with low current. The current rebound phenomenon of the RC-IGBT device during working in the prior art can be avoided.
Description
Technical field
The present invention relates to semiconductor device processing technology field, more particularly to a kind of inverse conductivity type IGBT device.
Background technology
Insulated gate bipolar transistor（Insulated Gate Bipolar Transistor, abbreviation IGBT）It is by double
Polar form audion（BJT）And insulating gate type field effect tube（MOSFET）The compound full-control type voltage driven type power semiconductor of composition
Device, has the high input impedance and power transistor of MOSFET element concurrently（I.e. huge transistor, abbreviation GTR）Low conduction voltage drop
Both sides advantage, it is commonly used as high-voltage switch gear.
, when back-pressure is born, collector junction is reverse-biased and can not turn on for traditional IGBT device.So operationally, IGBT device
Jing is often used together with an antiparallel fast recovery diode, is born so as to pass through the perception that fast recovery diode is IGBT device
Carry the release channel that electric current is provided.Most of IGBT single tubes and module in practical application are by igbt chip and fast recovery diode
Encapsulation is formed chip jointly.In order to reduce the cost of system, the global reliability of system is improved, people have invented a kind of inverse conductivity type
IGBT, abbreviation RC-IGBT.Inverse conductivity type IGBT is current new IGBT device a kind of in the world, is set forth in 1988 earliest.
As shown in figure 1, traditional IGBT device includes：Drift region 101；Positioned at the base of 101 upper surface of the drift region
100；Positioned at the grid structure 105 on 100 surface of the drift region 101 and base；Positioned at the buffering of 101 lower surface of the drift region
Layer 102；Positioned at the collector structure 103 of 102 lower surface of the cushion and positioned at 103 lower surface of the collector structure
Metal electrode 104.As shown in Fig. 2 inverse conductivity type IGBT device includes：Drift region 201；Positioned at 201 upper surface of the drift region
Base 200；Positioned at the grid structure 205 on 200 surface of the drift region 201 and base；Positioned at 201 lower surface of the drift region
Cushion 202；Positioned at the collector structure 203 of 202 lower surface of the cushion, the collector structure 203 includes position arranged side by side
In the collecting zone 2031 and shorting region 2032 of 202 lower surface of the cushion；Positioned at the gold of 203 lower surface of the collector structure
Category electrode 204.
Contrast Fig. 1 and Fig. 2 is can be seen that compared to traditional IGBT device, the collector structure of inverse conductivity type IGBT device
203 is not continuous heavily doped P-type collecting zone 2031, but interruption introduce some be located at collecting zone 2031 side by side it is described
The heavily doped N-type shorting region 2032 on 202 surface of cushion so that the base 200 of inverse conductivity type IGBT device, drift region 201,
Cushion 202 and shorting region 2032 constitute a PIN diode so that inverse conductivity type IGBT device is equivalent to an IGBT and
Individual PIN diode inverse parallel, is simply integrated in same chip, releases so as to a compact electric current is provided when reverse-biased for which
Electric discharge road.And, during turning off, shorting region 2032 provides one for the excess carriers in drift region 201 and effectively takes out
Passage is walked, the turn-off time of inverse conductivity type IGBT device is substantially reduced.
Relative to traditional IGBT device, inverse conductivity type IGBT device saves chip area and encapsulation, testing expense, reduces
Device cost.Additionally, inverse conductivity type IGBT device also has relatively low loss, good safe voltage characteristic, positive temperature system
Number, and good turn-off characteristic, good short circuit curve and good power cycle characteristic.As inverse conductivity type IGBT device exists
There is very big advantage, along with the huge market demand on cost and performance so that inverse conductivity type IGBT device becomes domestic and international
The emphasis of all big enterprises' research.
But inverse conductivity type IGBT device is while having many advantages, such as, a little problems are there is also, topmost is exactly inverse leading
Operationally there is electric current rebound phenomenon in type IGBT device.
The content of the invention
To solve above-mentioned technical problem, a kind of inverse conductivity type IGBT device is embodiments provided, to solve existing skill
Electric current rebound phenomenon when inverse conductivity type IGBT device works in art.
To solve the above problems, following technical scheme is embodiments provided：
A kind of inverse conductivity type IGBT device, including：Semiconductor substrate；The cushion being formed in the Semiconductor substrate；Shape
Insulation system in cushion described in Cheng Yu；It is formed at the collector structure of the buffer-layer surface, the collector structure bag
Include collecting zone and shorting region；Wherein, the collecting zone is different with the doping type of shorting region, and is located at the insulation system respectively
Both sides.
Preferably, the material of the insulation system is SiO2Or Si3N4。
Preferably, the insulation system is completely through the cushion.
Preferably, the forming method of the insulation system includes：The cushion is performed etching, in the cushion
Form groove；The groove is filled, insulation system is formed.
Preferably, the cushion is run through in the insulation system part.
Preferably, height of the insulation system on the cushion to the collector structure direction is at 5 μm -10 μm
In the range of.
Preferably, the insulation system is at 1 μm -10 μm along the width on the collecting zone to the shorting region direction
In the range of.
Preferably, the formation process of the insulation system is local oxygen injection technique.
Preferably, the insulation system is also extended between the collecting zone and the shorting region.
Preferably, the forming method of the inverse conductivity type IGBT device includes：Semiconductor substrate is provided；Serve as a contrast in the quasiconductor
Cushion is formed in bottom；Collector structure is formed in the buffer-layer surface, the collector structure includes collecting zone and short circuit
Area；Groove is formed at the interface of the collecting zone and shorting region, the groove runs through the collector structure, and extends to
In the cushion；The groove is filled, insulation system is formed.
Compared with prior art, above-mentioned technical proposal has advantages below：
In the inverse conductivity type IGBT device provided by the embodiment of the present invention, insulation system, and institute in the cushion, are formed with
State collecting zone and shorting region respectively positioned at the both sides of the insulation system so that the insulation system by the collecting zone with
The potential of the shorting region is isolated to a certain extent, and then causes the inverse conductivity type RC-IGBT device with less electricity
Stream enters tradition IGBT patterns, solves electric current rebound phenomenon during RC-IGBT devices work in prior art.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the structural representation of traditional IGBT device in prior art；
Fig. 2 is the structural representation of inverse conductivity type IGBT device in prior art；
Fig. 3 is the I-V characteristic curve synoptic diagram of inverse conductivity type IGBT device generation electric current rebound in prior art；
Fig. 4 is the principle schematic of inverse conductivity type IGBT device generation electric current rebound in prior art；
A kind of structural representation of the inverse conductivity type IGBT device that Fig. 5 is provided by the embodiment of the present invention；
Another kind of structural representation of the inverse conductivity type IGBT device that Fig. 6 is provided by the embodiment of the present invention；
Fig. 7 is the situation that the height of insulation system described in the embodiment of the present invention is respectively 0 μm, 1 μm, 1.5 μm and 2 μm
Under, there is I-V characteristic curve during electric current rebound phenomenon in the inverse conductivity type IGBT device；
Another structural representation for the inverse conductivity type IGBT device that Fig. 8 is provided by the embodiment of the present invention；
Fig. 9 is the I-V characteristic curve of inverse conductivity type IGBT device in prior art, and provided in the embodiment of the present invention
The contrast schematic diagram of the I-V characteristic curve of inverse conductivity type IGBT device.
Specific embodiment
Just as described in the background section, operationally there is electric current rebound now in inverse conductivity type IGBT device of the prior art
As.
Inventor's research finds, as shown in figure 3, at the RC-IGBT break-over of device initial stage, its electric current very little, grid are tied
Voltage V between structure 205 and collector structure 203CEIt is very big.But, when the RC-IGBT device grids structures 203 and current collection
Voltage V between pole structure 203CEMore than a particular value VPWhen, between the grid structure 205 and collector structure 203
Voltage VCESteep drop can occur, and electric current increases suddenly, that is, electric current rebound phenomenon occurs.
Inventor further study show that, at the conducting initial stage, as shown in figure 4, the RC-IGBT devices are one pole conductings
, electronics from channel region inject drift region 201, cushion 202 is flowed to almost vertical direction then, when electronics be pooled to it is slow
After rushing layer 202, laterally stream is arrived above the shorting region 2032, then from the short circuit electrons above the collecting zone 2031
Collector structure 203 is flowed out in area 2032, so that along the side at 2031 edge of the collecting zone to 2031 center of the collecting zone
To the potential above the collecting zone 2031 is gradually lowered.
Again as the potential above the collecting zone 2031 determines whether the collector junction of the RC-IGBT devices is opened.
In the RC-IGBT break-over of device initial stage, such as electric current density very little, Fig. 4（a）Shown, collector junction both sides potential is less than which everywhere
Built-in potential, i.e. Vmg<Vmf<…<Vma<0.7V so that the pressure drop produced above the collecting zone 2031 is insufficient to allow collector junction
Open, so that 2031 side of the collecting zone does not have hole to inject, accordingly, the RC-IGBT device insides will not be sent out
Raw conductivity modulation effect so that its conduction voltage drop is very big, i.e. voltage V between grid structure 205 and collector structure 203CEVery
Greatly.
As the voltage difference that grid structure 205 is applied with 203 two ends of collector structure constantly increases, electric current density increases,
Collector junction forward bias increases, such as Fig. 4（b）Shown, until reaching particular voltage level VP, collector junction begins to turn on.Work as collector junction
When partially ON, i.e. Vmg<…Vmd<0.7V<Vmc<…<Vma so that the part turned in collector junction starts to inject hole, from
And the RC-IGBT device insides are caused, start conductivity modulation effect, and then its conduction voltage drop is declined to a great extent, this
When, the RC-IGBT devices enter traditional IGBT patterns, its conduction voltage drop very little, i.e. grid structure 205 and collector structure
Voltage V between 203CEVery little.
Inventor further studies discovery, increases the collecting zone 2031 and arrives shorting region 2032 along the collecting zone 2031
Length L in directionP, can cause the RC-IGBT devices that particular voltage level V when electric current can be jumped occursPIt is substantially reduced, so as to
So that the RC-IGBT devices enter tradition IGBT patterns with less electric current.
But, due to length L of the collecting zone 2031PWith the shorting region 2032 along the collecting zone 2031 to short circuit
Length L in 2032 direction of areaNRatio have certain limit to limit, therefore, increase length L of the collecting zone 2031P, phase
Answer, can also increase length L of the shorting region 2032N.And increase length L of the shorting region 2032N, although with the RC-
There is particular voltage level V when electric current can be jumped in IGBT devicePRelation less, but can increase the RC-IGBT devices and electricity occurs
Flow back to electric current I during jumpP, so as to cause to be difficult by adjusting LPAnd LNSo that there is voltage when electric current knock-ons in RC-IGNT devices
VPWith electric current IPDecline simultaneously.
And, increase length L of the collecting zone 2031P, it is when can cause the RC-IGBT devices forward conduction, described
Electric current density above collecting zone 2031 is larger, and the electric current density above the shorting region 2032 is less, i.e., described colelctor electrode
CURRENT DISTRIBUTION above structure 203 is not divided equally in large scale, so as to weaken the Power Cycle of the RC-IGBT devices.
Additionally, inventor also studies discovery, the doping content of cushion 202 is reduced, can significantly reduce the RC-IGBT
There is particular voltage level VP when electric current can be jumped in device, but, the doping content for reducing the cushion 202 can affect RC-
Other performances of IGBT device, such as breakdown voltage, leakage current and short-circuit tolerance etc..
On the basis of based on the studies above, the invention provides a kind of inverse conductivity type IGBT device, including：Semiconductor substrate；
The cushion being formed in the Semiconductor substrate；The insulation system being formed in the cushion；It is formed at the cushion
The collector structure on surface, the collector structure include collecting zone and shorting region；Wherein, the collecting zone and shorting region are mixed
Miscellany type is different, and is located at the insulation system both sides respectively, so that the inverse conductivity type RC-IGBT device is with less electricity
Stream enters tradition IGBT patterns, electric current rebound phenomenon when RC-IGBT devices work in solution prior art.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.The embodiment of the present invention by punch RC-IGBT devices of the RC-IGBT devices is
Example is illustrated.
Elaborate detail in order to fully understand the present invention in the following description.But the present invention can with it is various not
It is same as alternate manner described here to implement, those skilled in the art can do class in the case of without prejudice to intension of the present invention
Like popularization.Therefore the present invention is not embodied as being limited by following public.
Embodiment one：
As shown in figure 5, the inverse conductivity type IGBT device provided by the embodiment of the present invention includes：Semiconductor substrate, it is formed at institute
State the positive Facad structure of Semiconductor substrate（Not shown in figure）, and the back side knot for being formed at the Semiconductor substrate back side
Structure.Wherein, it is drift region 500 that Facad structure and the remainder after backside structure are removed in the Semiconductor substrate.It is described just
Face structure includes：It is formed at the grid structure of the semiconductor surface, and the quasiconductor for being formed at the grid structure both sides
Emitter structure in substrate etc..The Facad structure and existing skill of the inverse conductivity type IGBT device provided due to the embodiment of the present invention
In art, the Facad structure of inverse conductivity type IGBT device is identical, is well known to those skilled in the art, and the present embodiment is no longer detailed to this
Carefully repeat.
The backside structure includes：It is formed in the Semiconductor substrate, positioned at the cushion on 500 surface of the drift region
501, the doping type of the cushion 501 is identical with the doping type of the drift region 500, but the cushion 501 is mixed
Doping content of the miscellaneous concentration more than the drift region 500；The insulation system 503 being formed in the cushion 501, the insulation
The material of structure 503 can be SiO2, or Si3N4, the present invention is not limited to this, as long as being insulant；With
And the collector structure 502 on 501 surface of the cushion is formed at, the collector structure includes being formed at the buffering side by side
The collecting zone 5021 and shorting region 5022 on 501 surface of layer, the collecting zone 5021 are different with the doping type of shorting region 5022, and
Respectively positioned at the both sides of the insulation system 503.
In embodiments of the present invention, the insulation system 503 is completely through the cushion 501, so as to by the current collection
5021 top cushion 501 of area is completely isolated with the potential of 5022 top cushion 501 of shorting region.In the inverse conductivity type IGBT device
Part turns on the initial stage, and laterally stream is arrived positioned at the shorting region 5022 electronics in 5021 top cushion 501 of the collecting zone
During in the cushion 501 of top, due to above the cushion 501 above the collecting zone 5021 and the shorting region 5022
Cushion 501 it is completely isolated by the insulation system 503 so that the electronics in 5021 top cushion 501 of the collecting zone
When laterally flowing to the insulation system 503, can only arrive described by the stream of drift region 500 above the insulation system 503
In cushion 501 above shorting region 5022.Again because the doping content of the slow drift region 500 is less than the cushion 501
Doping content, therefore, the resistivity of the resistivity of the drift region 500 more than the cushion 501, so as to increase the collection
Electronics in 5021 top cushion 501 of electric area flows through the voltage drop during insulation system 503 so that the inverse conductivity type
IGBT device enters tradition IGBT patterns with less electric current, to solve to occur when in prior art, inverse conductivity type IGBT device works
The problem of electric current rebound phenomenon.
In embodiments of the present invention, the insulation system 503 is completely through the cushion 501, as shown in figure 5, at this
In the other embodiment of invention, the insulation system 503 can also partly run through the cushion 501, as shown in Figure 6.This
In bright provided inverse conductivity type IGBT device, the insulation system 503 arrives the collector structure 502 along the cushion 501
Height on direction freely can change.With the increase of the height of the insulation system 503, its isolation effect strengthens therewith,
There is voltage V when electric current knock-ons in the inverse conductivity type IGBT devicePWith electric current IPAlso it is less therewith, so that the sky of collector junction
Cave injection efficiency increases therewith, and the conduction voltage drop of inverse conductivity type IGBT device declines therewith.But, due to the insulation system 503
The delivery pathways of excess carriers in the drift region 500 are blocked to a certain extent so that the height of the insulation system 503
Degree is higher, and the turn-off time of the inverse conductivity type IGBT device is longer, therefore, in the present embodiment, the insulation system 503 is along institute
State collecting zone 5021 highly preferred in the range of 5 μm -10 μm to short-circuit 5022 direction, but the present invention to this not
Limit, depending on concrete device architecture with purposes.
As shown in fig. 7, the height that the insulation system 503 is respectively illustrated in Fig. 7 is respectively 0 μm（Do not insulate knot
Structure 503）, 1 μm, in the case of 1.5 μm and 2 μm, there is electric current and return in the inverse conductivity type IGBT device provided in the embodiment of the present invention
Jump I-V characteristic curve during phenomenon.It can be seen from figure 7 that in inverse conductivity type IGBT device provided in the embodiment of the present invention,
The height of the insulation system 503 is higher, and the inverse conductivity type IGBT device occurs voltage V when electric current knock-onsPWith electric current IPMore
Little, conduction voltage drop is also less.
Additionally, in inverse conductivity type IGBT device provided in the embodiment of the present invention, the insulation system 503 is along the current collection
Area 5021 freely can also change to the width on 5022 direction of the shorting region, in the present embodiment preferably at 1 μm -10 μm
In the range of, but the present invention do not limited to this, as long as insulating effect can be played.
The inverse conductivity type IGBT device provided by the embodiment of the present invention make when, the manufacture method of the insulation system 503
Relatively freely.In one embodiment of the invention, the forming method of the inverse conductivity type IGBT device includes：Quasiconductor lining is provided
Bottom；Cushion 501 is formed in the Semiconductor substrate；Insulation system 503 is formed in the cushion 501；Described slow
Rush 501 surface of layer and form collector structure 502, specially in 501 surface of the cushion difference shape of 503 both sides of the insulation system
Into collecting zone 5021 and shorting region 5022, wherein, the collecting zone 5021 is different with the doping type of shorting region 5022, and respectively
Positioned at 503 both sides of the insulation system.
When the insulation system 503 is completely through the cushion 501, insulation knot is formed in the cushion 501
Structure 503 can adopt local oxygen injection technique, i.e., using similar to SOI technology make, simply using be locally implanted certain energy and
After the oxygen element of dosage, anneal to form insulator；Can also be using etching, fill process.When using etching fill process,
Insulation system 503 is formed in the cushion 501 to be included：The cushion 501 is performed etching, in the cushion 501
Form groove；The groove is filled, insulation system 503 is formed.When the buffering is run through in 503 part of the insulation system
During layer 501, insulation system 503 is formed in the cushion 501 and preferably adopts local oxygen injection, annealing process.But the present invention is right
This does not limit, as long as the insulation system 503 can be formed in the cushion 501.
As shown in figure 8, in the inverse conductivity type IGBT device that provided of the embodiment of the present invention, the insulation system 503 can be with
Extend between the collecting zone 5021 and the shorting region 5022, will be the collecting zone 5021 complete with the shorting region 5022
Isolation, so as to avoid the shorting region 5022 potential of the cushion 501 above the collecting zone 5021 is pulled to it is described
The potential level of the cushion 501 above shorting region 5022, reduces the logical too pressure drop of the inverse conductivity type IGBT device.
In one embodiment of the invention, when the insulation system 503, to extend to the collecting zone 5021 short with described
When between road area 5022, insulation system 503 is formed in the cushion 501 can be using etching, fill process but of the invention
This is not limited.When using etching fill process, the forming method of the inverse conductivity type IGBT device includes：Quasiconductor is provided
Substrate；Cushion 501 is formed in the Semiconductor substrate；Collector structure 502, institute are formed on 501 surface of the cushion
Stating collector structure 502 includes being formed at side by side the collecting zone 5021 and shorting region 5022 on 501 surface of the cushion；To described
Perform etching at the interface of collecting zone 5021 and shorting region 5022, in the collecting zone 5021 and the interface of shorting region 5022
Place forms groove, and the groove runs through the collector structure 502, and extends in the cushion 501；The groove is entered
Row filling, forms insulation system 503.
As shown in figure 9, during prior art is respectively illustrated in Fig. 9 inverse conductivity type IGBT device I-V characteristic curve, Yi Jiben
The I-V characteristic curve of the inverse conductivity type IGBT device provided in inventive embodiments.It can be seen in figure 9 that compared to existing skill
Inverse conductivity type IGBT device in art, although increased insulation system in the inverse conductivity type IGBT device provided in the embodiment of the present invention
503, but its breakdown voltage and threshold voltage can't be affected.
In sum, in the inverse conductivity type IGBT device provided by the embodiment of the present invention, in the cushion, it is formed with insulation
Structure, and the collecting zone and shorting region are respectively positioned at the both sides of the insulation system, so that the insulation system is by institute
The potential that collecting zone is stated with the shorting region is isolated to a certain extent, and then causes the inverse conductivity type RC-IGBT device
Tradition IGBT patterns are entered with less electric current, electric current rebound phenomenon during RC-IGBT devices work in prior art is solved.
In this specification, various pieces are described by the way of progressive, and what each some importance was illustrated is and other parts
Difference, between various pieces identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or using the present invention.
Various modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
Embodiment illustrated herein is not intended to be limited to, and is to fit to consistent with principles disclosed herein and features of novelty
Most wide scope.
Claims (10)
1. it is a kind of against conductivity type IGBT device, it is characterised in that to include：
Semiconductor substrate；
The cushion being formed in the Semiconductor substrate；
The insulation system being formed in the cushion；
The collector structure of the buffer-layer surface is formed at, the collector structure includes collecting zone and shorting region；
Wherein, the collecting zone is different with the doping type of shorting region, and is located at the insulation system both sides respectively；
Wherein, the cushion is located at drift region surface；The doping type of the doping type of the cushion and the drift region
It is identical, and the doping content of the cushion is more than the doping content of the drift region；
Wherein, it is drift region that Facad structure and the remainder after backside structure are removed in the Semiconductor substrate.
2. it is according to claim 1 against conductivity type IGBT device, it is characterised in that the material of the insulation system is SiO2Or
Si3N4。
3. it is according to claim 1 against conductivity type IGBT device, it is characterised in that the insulation system is completely through described slow
Rush layer.
4. it is according to claim 3 against conductivity type IGBT device, it is characterised in that the forming method bag of the insulation system
Include：
The cushion is performed etching, and groove is formed in the cushion；
The groove is filled, insulation system is formed.
5. it is according to claim 1 against conductivity type IGBT device, it is characterised in that the insulation system part is through described slow
Rush layer.
6. it is according to claim 5 against conductivity type IGBT device, it is characterised in that the insulation system is arrived along the cushion
Height on the collector structure direction is in the range of 5 μm -10 μm.
7. the inverse conductivity type IGBT device according to any one of claim 1-6, it is characterised in that the insulation system is along described
Collecting zone to the width on the shorting region direction be in the range of 1 μm -10 μm.
8. the inverse conductivity type IGBT device according to claim 3 or 5, it is characterised in that the formation process of the insulation system
For local oxygen injection technique.
9. the inverse conductivity type IGBT device according to any one of claim 1-6, it is characterised in that the insulation system also extends
To between the collecting zone and the shorting region.
10. it is according to claim 9 against conductivity type IGBT device, it is characterised in that the formation of the inverse conductivity type IGBT device
Method includes：
Semiconductor substrate is provided；
Cushion is formed in the Semiconductor substrate；
Collector structure is formed in the buffer-layer surface, the collector structure includes collecting zone and shorting region；
Groove is formed at the interface of the collecting zone and shorting region, the groove runs through the collector structure, and extends
Into the cushion；
The groove is filled, insulation system is formed.
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| CN201210501722.6A CN103855199B (en) | 2012-11-29 | 2012-11-29 | Reverse conducting type IGBT device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210501722.6A CN103855199B (en) | 2012-11-29 | 2012-11-29 | Reverse conducting type IGBT device |
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| CN103855199B true CN103855199B (en) | 2017-04-26 |
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| CN109449202B (en) * | 2018-10-30 | 2021-10-22 | 广州工商学院 | Reverse conducting bipolar transistor |
| CN116153992B (en) * | 2023-04-21 | 2023-06-23 | 上海陆芯电子科技有限公司 | Reverse-conduction insulated gate bipolar transistor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1669151A (en) * | 2003-06-05 | 2005-09-14 | 三菱电机株式会社 | Semiconductor device and its manufacturing method |
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| CN1669151A (en) * | 2003-06-05 | 2005-09-14 | 三菱电机株式会社 | Semiconductor device and its manufacturing method |
Non-Patent Citations (1)
| Title |
|---|
| A Snapback Suppressed Reverse-Conducting IGBT With a Floating p-Region in Trench Collector;Huaping Jiang, et al.;《IEEE ELECTRON DEVICE LETTERS》;20120331;第33卷(第3期);417-419 * |
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