CN103855125A - High-heat-conductive patterned circuit baseplate - Google Patents
High-heat-conductive patterned circuit baseplate Download PDFInfo
- Publication number
- CN103855125A CN103855125A CN201410096051.9A CN201410096051A CN103855125A CN 103855125 A CN103855125 A CN 103855125A CN 201410096051 A CN201410096051 A CN 201410096051A CN 103855125 A CN103855125 A CN 103855125A
- Authority
- CN
- China
- Prior art keywords
- high heat
- insulating layer
- heat conductive
- insulating barrier
- resin insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention relates to a high-heat-conductive patterned circuit baseplate, and belongs to the technical field of semiconductor device printed circuit boards. Resin insulating layers and high-heat-conductive insulating layers are formed on a metal baseplate, the high-heat-conductive insulating layers are used as substrates of semiconductor devices, the resin insulating layers are used as substrates of other electronic devices, and the semiconductor devices are electrically connected with the other electronic devices through metal connectors; the metal connectors are leading wires, humps and/or bridging articles made of silver, gold or copper. The circuit baseplate can remarkably improve heat dissipation, is high in reliability and can be applied to various base bodies containing semiconductor chips, and for example, heat dissipation of CPU and the like in a computer circuit, heat dissipation of IGBT, bipolar and other semiconductor chips in an inverter circuit, heat dissipation of a wireless module and the like in a wireless communication circuit and heat dissipation of management chips in a power source management circuit can be improved.
Description
Technical field
The invention belongs to the technical field of electronic component printed substrate, in particular, the present invention relates to a kind of high heat conducting pattern circuit substrate with excellent heat dissipation property.
Background technology
Along with the development of integrated circuit, Electronic Packaging becomes gentlier, thinner, less, with better function, progressively meets the mankind to pursuit convenient, comfortable, power, also Electronic Packaging had higher requirement simultaneously.The increase of electronic component power consumption will inevitably cause the raising of circuit caloric value, thereby makes working temperature constantly increase.In general, in semiconductor device, 18 DEG C of the every risings of temperature, the possibility of inefficacy just increases by 2～3 times.Therefore heat radiation becomes the bottleneck problem of restriction electronic component to high powerization development.
Current, heat dissipation problem has become one of pendulum ultimate challenge in face of designers undoubtedly.Along with printed substrate is towards the development of high density, high accuracy, small-sized multilayer SMT direction, the installing space of components and parts significantly reduces on the one hand; But and more and more higher to the power requirement of power component on the other hand.Little space is high-power inevitably produces more heat accumulation, causes components and parts electric property to decline and even damages.Previous solution is to adopt cooled hardware or the heat radiation of ceramic functional block, the former itself needs large quantity space, and the latter is more because ceramic thermal coefficient of expansion is larger, and can not form large ceramic insulating layer, and if ceramic insulating layer while being greater than certain size in repeated multiple times cold cycling solder joint place cause Joint failure even easily to cause that short circuit lost efficacy because stress easily forms crackle or comes off.In addition, along with the pin of electronic devices and components more and more participates in heat radiation, require conductive layer also will there is good heat-sinking capability.Therefore,, along with packaging density and the raising to reliability requirement, should consider to select the better base material of heat conductivility and heat-conducting layer.
Current electronic device generally uses FR4 printed substrate, for electronic device, affects a working temperature that key factor is exactly components and parts of its reliability index.Record according to pertinent literature, the failure rate of electronic equipment has 55% to be that the setting that exceedes electronic component by temperature causes.Temperature is different to the performance impact of all kinds components and parts, and in common components and parts, temperature has the greatest impact for semiconductor device.The semiconductor device of widely applying in electronic equipment is as integrated transporting discharging, TTL logic chip, various power supply voltage stabilizing chips etc., and its basic composition unit is all P-N knot, very responsive to variations in temperature, 10 DEG C of the general every risings of temperature, and reverse leakage current will double.This variation with temperature, will directly cause product normal working point to drift about, and maximum power dissipation declines.Temperature also has a certain impact to the performance parameter of Resistor-Capacitor Unit.When temperature raises, can cause thermal noise aggravation in resistance, resistance departs from nominal value, allows degradation under dissipation power.Be that the parameter such as capacitance and dielectric loss angle is changed on the impact of capacitor, thereby cause the parameter changes such as the capacity-resistance time constant in circuit, affect the reliability of whole electronic equipment.In order to reduce the performance impact of temperature to components and parts, must use heat radiation well and the high wiring board of reliability.
Summary of the invention
In order to solve the problems of the technologies described above, the object of the present invention is to provide a kind of high heat conducting pattern circuit substrate.Not only cost is relatively low and also have high thermal conductivity, resist and wear and the feature of dependable performance to adopt high heat conducting pattern circuit substrate of the present invention.
High heat conducting pattern circuit substrate of the present invention, comprise metal substrate, it is characterized in that: on described metal substrate, be formed with resin insulating barrier and high heat conductive insulating layer, and described high heat conductive insulating layer is as the pedestal of semiconductor components and devices, described resin insulating barrier is as the pedestal of other electronic devices and components, and described semiconductor components and devices and described other electronic devices and components are electrically connected by metal connector; And described metal connector is lead-in wire, bulge and/or the bridge material that adopts silver, gold or copper.
Wherein, on described metal substrate, there is multiple resin insulating barriers and multiple high heat conductive insulating layer; And between described resin insulating barrier, adjacent setting or interval arrange; Adjacent or interval setting between described high heat conductive insulating layer; Between described resin insulating barrier and described high heat conductive insulating layer, adjacent setting or interval arrange.
Wherein, described metal substrate is through surface treatment procedure, and described surface treatment procedure comprises any one or a few in roughening treatment, pickling, alkali cleaning, acid etching or alkaline etching operation.
Wherein, described metallic substrate surfaces is formed with anode oxide film in its surface through surface treatment.
Wherein, the scope of the conductive coefficient of described high heat conductive insulating layer is 50～500W/mK, is preferably 100～500W/mK.
Wherein, the thickness of described high heat conductive insulating layer is preferably 20～200 μ m.
Wherein, described semiconductor components and devices or other electronic devices and components are connected with plain conductor or metal joint pin by wave soldering, reflow soldering, eutectic welding or use electroconductive binder.
Wherein, the power of described semiconductor components and devices is more than 0.5W, more than being preferably 3W, more preferably more than 5W.
Wherein, the thermal conductivity of described resin insulating barrier is 0.5W/mK～30W/mK, and thickness is 20～200 μ m.
Wherein, described resin insulating barrier is the resin cured matter that contains thermosetting resin, curing agent and inorganic filler.
Compared with prior art, technical scheme of the present invention has following beneficial effect:
The present invention is by arranging Ceramic insulator and the insulation resin sheet of different conductive coefficients and unlike material, can provide thermal diffusivity to significantly improve and the electronic devices and components encapsulation insulating metal substrate of high reliability, because the performance of semiconductor device is to responsive to temperature, therefore use the base of ceramic of heat conduction and heat dispersion excellence for semiconductor device, and use common resin-insulated material for other electronic devices and components, the brittle failure of having avoided like this maximization of ceramic wafer to cause, has improved the reliability of circuit substrate; In addition the present invention, also by the processing to metal substrate, can form the high pressure resistant insulating barrier puncturing on the surface of metal substrate, and the anodic oxide coating of for example special processing or paint film layer, can further improve the reliability of packaging density and encapsulation.Circuit substrate of the present invention can be for the various matrixes containing semiconductor chip, for example can improve the heat radiation of CPU etc. in computer circuits, improve the heat radiation of the semiconductor chips such as IGBT bipolar in inverter circuit, improve the heat radiation of wireless module in wireless communication line etc., the heat radiation that improves managing chip in electric power management circuit.
Brief description of the drawings
Fig. 1 is the structural representation of the high heat conducting pattern circuit substrate with semiconductor components and devices and other electronic devices and components of the present invention.
Embodiment
As shown in Figure 1, for a typical example (but the scope that protection scope of the present invention limits with the claim of checking and approving is as the criterion) of great power LED photo engine of the present invention, on described high heat conducting pattern circuit substrate, be provided with semiconductor components and devices and other electronic devices and components, it comprises metal substrate 10, on described metal substrate 10, be formed with resin insulating barrier 20 and high heat conductive insulating layer 25, and on described high heat conductive insulating layer 25, be provided with metal pattern circuit 30 and semiconductor components and devices 40, on described resin insulating barrier 20, be provided with metal pattern circuit 30 and other electronic devices and components 50, and described semiconductor components and devices 40 can be electrically connected by metal connector 60 with described other electronic devices and components 50.Described metal connector is lead-in wire, bulge and/or the bridge material that adopts silver, gold or copper.Specifically, for example, can adopt solder, solder brazing, high-termal conductivity binding agent etc. to be electrically connected, be preferably solder.Described semiconductor chip can be for example IGBT bipolar chip, cpu chip, wireless telecommunications chip, managing chip or other semiconductor chip in inverter circuit in the present invention.
Wherein, on described metal substrate, there is multiple resin insulating barriers and multiple high heat conductive insulating layer; And between described resin insulating barrier, adjacent setting or interval arrange; Adjacent or interval setting between described high heat conductive insulating layer; Between described resin insulating barrier and described high heat conductive insulating layer, adjacent setting or interval arrange.
As preferably, described metallic matrix is through surface treatment procedure, and described surface treatment procedure can comprise the various operations such as roughening treatment, pickling, alkali cleaning, acid etching or alkaline etching.As the exemplary process that is used to form coarse surface, can enumerate to metal substrate is implemented successively the roughened processing of mechanicalness, alkaline etching processing, adopts sour clean and used the methods such as the roughened processing of electrochemistry of electrolyte; Metal substrate is implemented repeatedly the roughened processing of mechanicalness, alkaline etching processing, adopts sour dirty removing processing and used the method for the roughened processing of electrochemistry of different electrolyte; But the present invention is not limited to these.Can be inorganic acid and/or organic acid as acid, described inorganic acid can be for example sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid etc.; Described organic acid can be for example carboxylic acid or sulfonic acid, such as formic acid, acetic acid, tartaric acid, oxalic acid, malic acid, ascorbic acid and benzoic acid etc.Can be for example alkali-metal hydroxide as conventional alkali, for example NaOH or potassium hydroxide, also can use the organic base such as Tetramethylammonium hydroxide, trimethyl (ethoxy) ammonium hydroxide in addition.In order to reduce the etch quantity of metal matrix material in pickling or alkaline etching processing procedure, in described aqueous slkali or acid solution, can contain anticorrodent, can contain in addition other component such as surfactant and chelating agent.In addition, described surface treatment, can also be to form the paint film layer of anode oxide film or electric insulation at described metal base surface, thereby improves the high pressure resistant breakdown strength of caking property and described metallic matrix.
In the present invention, be 50～500W/mK as the scope of the conductive coefficient of the described high heat conductive insulating layer in the present invention, as preferably, the scope of the conductive coefficient of described high heat conductive insulating layer is 100～500W/mK.The thickness of described high heat conductive insulating layer is preferably 20～200 μ m.Described high heat conductive insulating layer can be made up of ceramic material or nonmetal monocrystal material, can select but be not limited to zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silicon dioxide, silicon nitride, sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride as ceramic material.The ceramic wafer that described ceramic material can be fired by cutting in the present invention is also welded on metal substrate of the present invention, and described welding method can be for example the method for soldering, such as solder, solder brazing or active soldering etc.Described ceramic material can also prepare by original position formation method in the present invention, and for example, by vacuum coating method, for example conventional physical gas-phase deposite method or chemical gaseous phase depositing process prepare.As example for example evaporation, sputter or the ion-plating deposition method of physical vapour deposition (PVD).Wherein, that vacuum evaporation deposition has is simple and easy, processing ease, film forming speed are fast and efficiency advantages of higher, is the most widely used technology in film preparation.Its principle is under vacuum environment, gives material to be evaporated, and for example ceramic material in the present invention provides enough heats to evaporate necessary vapour pressure to obtain.At suitable temperature, evaporation particle condenses on metallic matrix, so both can realize vacuum evaporation thin film deposition.For example can select resistance heating evaporation, flicker evaporation, electron beam evaporation, laser evaporation, arc evaporation or radio frequency heating evaporation etc. as the example of evaporation.Sputter refers to that having enough high-octane Ions Bombardment target material surfaces makes atomic emissions wherein out, sputter procedure in fact incoming particle (being generally ion) by colliding with target, carry out the process of a series of energy exchanges, and projectile energy 95% for encouraging the lattice thermal vibration of target, the energy that only has 5% left and right is to pass to sputtered atom.Example as sputtering sedimentation for example passes through, by medium-high frequency magnetron sputtering ceramic target and be deposited in described metallic substrate surfaces, the film that sputter obtains is combined well with matrix, and film purity is higher, compactness is better, and thickness is controlled, can obtain the film of even thickness.Example as sputtering sedimentation for example can be selected aura direct current sputtering, magnetron sputtering, radio frequency sputtering, ion beam sputtering, reactive sputtering etc.In addition, described ceramic material can also be deposited and be obtained by ion electroplating method.Ion plating refers under vacuum condition, utilizes gas discharge to make gas or by evaporant partial ionization, produces ion bombardment effects, and evaporant or reactant are deposited on substrate the most at last.For example can adopt general chemical gaseous phase depositing process or plasma enhanced chemical vapor deposition method as chemical gaseous phase depositing process.
In the present invention, according to the type of other electronic devices and components, the thermal conductivity of described resin insulating barrier is more than 0.5W/mK, and more preferably, its thermal conductivity is more than 1.0W/mK, for example, can be the scope of 0.5～30W/mK.The heat diffusion that so other electronic devices and components or plain conductor can be produced is fallen and is not produced accumulation.The thickness of described resin insulating barrier is preferably 20～200 μ m.If because thickness is less than 20 μ m, electrical insulating property becomes insufficient, if be greater than 200 μ m, thermal diffusivity may be impaired.And described resin insulating barrier is the resin cured matter that contains thermosetting resin and curing agent.As preferably, described resin insulating barrier is the resin cured matter that contains thermosetting resin, curing agent and inorganic filler.In addition,, in the hardening resin composition that is used to form insulating barrier, can also can also use as required catalyst, silane coupling agent, metatitanic acid lipid coupling agent, stabilizer and curing accelerator etc.
As inorganic filler, preferably there is the good inorganic filler of electrical insulating property and heat conductivity, for example can use silicon dioxide, aluminium oxide, aluminium nitride, silicon nitride, boron nitride etc.For keeping suitable mobility, preferably 5～15wt% of the content of the inorganic filler in insulating barrier.The granularity of inorganic filler is better to comprise two kinds of granularities that average grain diameter is 0.6 μ m～2.4 μ m and 5 μ m～20 μ m.By corase particles larger average grain diameter and the less particulate of average grain diameter are mixed, during with the each particulate of independent use compared with, can realize more filling, can obtain good heat conductivity.In addition, shape of particle can be that pulverize, spherical or lepidiod.
metal substrate and anodic alumina films
At the bottom of described metal substrate is chosen as aluminum plate foundation in the present embodiment, the fine aluminium of for example 99.99wt%, and be formed with anodic alumina films at the bottom of described aluminum plate foundation; Thickness at the bottom of described aluminum plate foundation is 2～20mm, and the thickness of anodic alumina films is 10～20 μ m; The durable time of insulation of described anodic alumina films is greater than 1000 hours, and the durable time of described insulation refers under 50 DEG C, the condition of 85%RH and on anodic alumina films, applies the direct voltage of 100V, and resistance value is dropped to 10
6time below Ω.
The preparation method of described anode oxide film is as follows: first aluminium sheet is cleaned and scale removal, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 20～35g/L, the DL-cysteine of 3～5g/L, the hydrogen peroxide of 0.5～1.0g/L, the aluminium citrate of 3～5g/L; Be that 10～20 DEG C, current density are 0.5～1A/dm in liquid temperature
2, electrolytic treatments 20～30min.Adopt above-mentioned anode oxidation method, owing to adopting citric acid as Treatment Solution, and appropriate hydrogen peroxide and DL-cysteine are added therein, in the time of anodized, can make aluminum ions in liberal supply, thereby can obtain fine and close anodic alumina films, be under 10 μ m and above condition at thickness, even can meet without sealing of hole processing the requirement that the durable time of insulation is greater than 1000 hours.
Embodiment 1
The preparation method of the anode oxide film described in the present embodiment is as follows: first aluminium sheet is cleaned and scale removal, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 20g/L, the DL-cysteine of 3g/L, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 3g/L; Be that 10 DEG C, current density are 1A/dm in liquid temperature
2, electrolytic treatments 20min.The dense anodic oxide aluminium film obtaining durable time of insulating is greater than 1000 hours.
Embodiment 2
The preparation method of the anode oxide film described in the present embodiment is as follows: first aluminium sheet is cleaned and scale removal, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 30g/L, the DL-cysteine of 4g/L, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 5g/L; Be that 20 DEG C, current density are 1A/dm in liquid temperature
2, electrolytic treatments 20min.The dense anodic oxide aluminium film obtaining durable time of insulating is greater than 1000 hours.
Embodiment 3
The preparation method of the anode oxide film described in the present embodiment is as follows: first aluminium sheet is cleaned and scale removal, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 35g/L, the DL-cysteine of 5g/L, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 5g/L; Be that 10 DEG C, current density are 1A/dm in liquid temperature
2, electrolytic treatments 30min.The dense anodic oxide aluminium film obtaining durable time of insulating is greater than 1500 hours.
Comparative example 1
Aluminium sheet is carried out to pickling descaling, then in oxalic acid solution, carry out anodized, in described oxalic acid solution, contain the oxalic acid of 35g/L, the oxalic acid aluminium of 5g/L; Be that 20 DEG C, current density are 1A/dm in liquid temperature
2, electrolytic treatments 30min; Then in boric acid aqueous solution, seal processing, in described boric acid aqueous solution, contain the boric acid of 0.5mol/L and the sodium tetraborate of 0.2mol/L; Sealing of hole condition is 20 DEG C of liquid temperatures, current density 1A/dm
2, 5 minutes electrolytic treatments time, its durable time of insulating is 300～500 hours.
Comparative example 2
Aluminium sheet is carried out to pickling descaling, then in sulfuric acid solution, carry out anodized, in described sulfuric acid solution, contain the oxalic acid of 35g/L, the aluminum sulfate of 5g/L; Be that 20 DEG C, current density are 1A/dm in liquid temperature
2, electrolytic treatments 30min; Then in boric acid aqueous solution, seal processing, in described boric acid aqueous solution, contain the boric acid of 0.5mol/L and the sodium tetraborate of 0.2mol/L; Sealing of hole condition is 20 DEG C of liquid temperatures, current density 1A/dm
2, 5 minutes electrolytic treatments time, its durable time of insulating is 250～400 hours.
high heat conductive insulating layer
In the present invention, the scope of the conductive coefficient of described high heat conductive insulating layer is 50～500W/mK.Described high heat conductive insulating layer thickness scope is 20～200 μ m, for example, be 50 μ m.The ceramic wafer that described ceramic material can be fired by cutting in the present invention is also welded on metal substrate of the present invention, described welding method can be for example the method for soldering, such as solder, solder brazing or active soldering etc., preferably use active soldering, the composition of described active soldering for example can be selected the Si of Al, 3.00wt% and the Cu of surplus of Ti, the 2.00wt% of 2.25wt%; For example can select the Cu of Ti, 32.250wt% and the Ag of surplus of 1.25wt%; For example can select the Cu of In, 27.25wt% and the Ag of surplus of Ti, the 12.50wt% of 1.25wt%.In addition, described high heat conductive insulating layer can also adopt evaporation, the method of sputter plating or reactive ion plating and chemical vapour deposition (CVD) prepares, for example adopting application people is Suzhou Jing Pin Electro-optical Technology, INC. (US) 62 Martin Road, Concord, Massachusetts 017, publication number is CN103354221A, CN103353065A, CN103354219A, CN103354222A, CN103354698A, CN103354220A, CN103354269A, CN103354697A, CN103354699A, CN103354254A, CN103327736A, CN103327735A, CN103325921A, CN103338588A, or notification number is CN203340413U, CN203339213U, CN203339139U, CN203340409U, CN203340407U, CN203340408U, CN203339224U, CN203336288U, the preparation method who records in CN203339140U and CN203339145U, and above-mentioned document is documented in this, as a reference.
resin insulating barrier
In the present invention, the thermal conductivity of described resin insulating barrier may be selected to be 0.5～30W/mK, and the thickness range of described resin insulating barrier is preferably 20～200 μ m.
Described resin insulating barrier is formed by the hardening resin composition that contains thermosetting resin, curing agent and inorganic filler, in addition, in the hardening resin composition that is used to form insulating barrier, can also can also use as required other component etc.Formation condition for example can be solidified 30～180 seconds under the condition of 160～180 DEG C.As preferably, 2 of the phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of the Bisphenol F diglycidyl ether that described hardening resin composition contains 55～60wt%, the vinyltriethoxysilane of 12.5～15.0wt%, 8.0～10.0wt%, the TSIM of 3.2～5.0wt%, 2.5～3.0wt%, 0.5～1.0wt%, 6-BHT, and the average grain diameter of 3～8wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 3～8wt% are the alumina particulate of 5.0 μ m.
Embodiment 4
2 of the phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of the Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 55wt%, the vinyltriethoxysilane of 15.0wt%, 10.0wt%, the TSIM of 5.0wt%, 2.5wt%, 1.0wt%, 6-BHT, and the average grain diameter of 5.5wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 6.0wt% are the alumina particulate of 5.0 μ m.When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 20～25W/mK.
Embodiment 5
2 of the phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of the Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 60wt%, the vinyltriethoxysilane of 12.5wt%, 8wt%, the TSIM of 3.2wt%, 3.0wt%, 1.0wt%, 6-BHT, and the average grain diameter of 6.3wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 6.0wt% are the alumina particulate of 5.0 μ m.When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 22～26W/mK.
Embodiment 6
2 of the phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of the Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 58wt%, the vinyltriethoxysilane of 15wt%, 10wt%, the TSIM of 5wt%, 3.0wt%, 1.0wt%, 6-BHT, and the average grain diameter of 4wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 4wt% are the alumina particulate of 5.0 μ m.When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 18～22W/mK.
Embodiment 7
2 of the phthalic anhydride of the Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 78wt%, the glyoxal ethyline of 5wt%, 3.0wt%, 1.0wt%, 6-BHT, and the average grain diameter of 6.5wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 6.5wt% are the alumina particulate of 5.0 μ m.When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 15～20W/mK.
Described resin insulating barrier, except meeting required thermal conductivity, also should have excellent heat-resisting discolouration in the present invention.In order to detect the heat-resisting discoloration of above-mentioned hardening resin composition, by described hardening resin composition, at 170 DEG C, 8N/mm
2and be that to be processed into diameter under the condition of 120 seconds be that 50mm × thickness is that the disk of 3mm is as sample curing time, then under the condition of 150 DEG C, place 24 hours, utilization visually observes its heat-resisting discolouration, find that the sample described in embodiment 4-6 do not find metachromatism, and the slightly variable color or variable color has occurred of sample described in embodiment 7.
metal pattern circuit
According to actual needs, at described resin insulating barrier, or be all formed with metal pattern circuit on described resin insulating barrier and described high heat conductive insulating layer.On described edge layer, can form conductive copper films by boning or pressing Copper Foil, or can form copper film by sputter, chemical plating (need to activate in advance).The thickness of described copper film is for example that 2～5 μ m are thick, then coat photoresist being with on described copper film, then on mask aligner, utilize metal lithographic mask to carry out photoetching, then form metal pattern circuit through developing, or, adopt the method for silk screen printing directly to form the figure of conductive metal layer; After baking-curing, more described aluminium lamination is carried out to etching with wet etching process, after etching, can obtain described metal pattern circuit.
For the ordinary skill in the art; specific embodiment is just exemplarily described the present invention by reference to the accompanying drawings; obviously specific implementation of the present invention is not subject to the restrictions described above; as long as adopted the improvement of the various unsubstantialities that method of the present invention design and technical scheme carry out; or without improving, design of the present invention and technical scheme are directly applied to other occasion, all within protection scope of the present invention.
Claims (9)
1. one kind high heat conducting pattern circuit substrate, comprise metal substrate, it is characterized in that: on described metal substrate, be formed with resin insulating barrier and high heat conductive insulating layer, and described high heat conductive insulating layer is as the pedestal of semiconductor components and devices, described resin insulating barrier is as the pedestal of other electronic devices and components, and described semiconductor components and devices and described other electronic devices and components are electrically connected by metal connector; And described metal connector is lead-in wire, bulge and/or the bridge material that adopts silver, gold or copper.
2. high heat conducting pattern circuit substrate according to claim 1, is characterized in that: described semiconductor chip is IGBT bipolar chip, cpu chip, wireless telecommunications chip, managing chip or other semiconductor chip in inverter circuit.
3. high heat conducting pattern circuit substrate according to claim 1, is characterized in that: on described metal substrate, have multiple resin insulating barriers and multiple high heat conductive insulating layer; And between described resin insulating barrier, adjacent setting or interval arrange; Adjacent or interval setting between described high heat conductive insulating layer; Between described resin insulating barrier and described high heat conductive insulating layer, adjacent setting or interval arrange.
4. high heat conducting pattern circuit substrate according to claim 1, it is characterized in that: described metal substrate is through surface treatment procedure, and described surface treatment procedure comprises any one or a few in roughening treatment, pickling, alkali cleaning, acid etching or alkaline etching operation.
5. high thermally conductive LED light fixture according to claim 1, is characterized in that: the material of described high heat conductive insulating layer is combined in metallic substrate surfaces by the mode of sputter, precipitation or sintering.
6. high heat conducting pattern circuit substrate according to claim 1, is characterized in that: the scope of the conductive coefficient of described high heat conductive insulating layer is 50～500W/mK, thickness is 20～200 μ m.
7. high thermally conductive LED light fixture according to claim 1, is characterized in that: the material of described high heat conductive insulating layer is aluminium, silicon, zirconium, titanyl compound or nitride.
8. high heat conducting pattern circuit substrate according to claim 1, is characterized in that: the thermal conductivity of described resin insulating barrier is 0.5W/mK～30W/mK, thickness is 20～200 μ m.
9. high heat conducting pattern circuit substrate according to claim 1, is characterized in that: described resin insulating barrier is made up of the hardening resin composition that contains thermosetting resin, curing agent and inorganic filler.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410096051.9A CN103855125B (en) | 2014-03-14 | 2014-03-14 | High heat conducting pattern circuit substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410096051.9A CN103855125B (en) | 2014-03-14 | 2014-03-14 | High heat conducting pattern circuit substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103855125A true CN103855125A (en) | 2014-06-11 |
| CN103855125B CN103855125B (en) | 2016-11-16 |
Family
ID=50862588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410096051.9A Active CN103855125B (en) | 2014-03-14 | 2014-03-14 | High heat conducting pattern circuit substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103855125B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104411086A (en) * | 2014-11-04 | 2015-03-11 | 广东明路电力电子有限公司 | Power PCB and processing method thereof |
| CN114420003A (en) * | 2022-01-17 | 2022-04-29 | 深圳市思坦科技有限公司 | Integrated LED structure and preparation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100102344A1 (en) * | 2007-03-01 | 2010-04-29 | Yoshinori Ueji | Led device and illuminating apparatus |
| CN102782866A (en) * | 2010-02-01 | 2012-11-14 | 富士胶片株式会社 | Insulating metal substrate and semiconductor device |
-
2014
- 2014-03-14 CN CN201410096051.9A patent/CN103855125B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100102344A1 (en) * | 2007-03-01 | 2010-04-29 | Yoshinori Ueji | Led device and illuminating apparatus |
| CN102782866A (en) * | 2010-02-01 | 2012-11-14 | 富士胶片株式会社 | Insulating metal substrate and semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104411086A (en) * | 2014-11-04 | 2015-03-11 | 广东明路电力电子有限公司 | Power PCB and processing method thereof |
| CN114420003A (en) * | 2022-01-17 | 2022-04-29 | 深圳市思坦科技有限公司 | Integrated LED structure and preparation method |
| CN114420003B (en) * | 2022-01-17 | 2024-01-02 | 深圳市思坦科技有限公司 | Integrated LED structure and preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103855125B (en) | 2016-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103917043A (en) | Patterned multi-insulating-material circuit substrate | |
| CN103912807B (en) | Great power LED photo engine | |
| CN102339758A (en) | Method for manufacturing copper-ceramic substrate by adopting low-temperature bonding | |
| KR102661275B1 (en) | Ultra-thin copper foil, ultra-thin copper foil with carrier, and method for manufacturing printed wiring board | |
| CN103338588B (en) | High heat conductive insulating metal base printed circuit board | |
| CN102917534A (en) | DLC (Diamond like Carbon) thin film coating-based ceramic substrate | |
| KR20110075451A (en) | Manufacturing method for integrated semiconductor power module substrate | |
| CN103855125A (en) | High-heat-conductive patterned circuit baseplate | |
| CN207678068U (en) | A kind of ultra-high conducting heat type ceramic substrate | |
| CN107708296A (en) | A kind of metal-based circuit board of high heat conduction and preparation method thereof | |
| CN200953685Y (en) | Aluminium-base insulating oxidized magnetic control sputtering metallized circuit board | |
| CN103872216B (en) | High-power LED light source module | |
| CN202918581U (en) | Ceramic substrate based on DLC thin film coating | |
| PH12015501631B1 (en) | Multi-level metalization on a ceramic substrate | |
| CN103855295B (en) | High thermally conductive LED light fixture | |
| TWI391039B (en) | Circuit board with metal heat sink and manufacturing method thereof | |
| CN103906346A (en) | Semiconductor device circuit board with high radiating and high thermal conducting characteristics | |
| TWI824064B (en) | Metal foil with carrier and method of manufacturing millimeter wave antenna substrate using same | |
| TW201542078A (en) | Method for manufacturing ceramic substrate heat-dissipating structure | |
| CN110034016A (en) | A kind of semiconductor chip front aluminium layer solderableization method | |
| CN102479760A (en) | Thermal diffusion element with aluminum nitride film and manufacturing method thereof | |
| KR20080105451A (en) | Metal electric circuit | |
| CN116695079B (en) | Heat-conducting insulating diamond composite material substrate and preparation method and application thereof | |
| CN203415625U (en) | LED device based on glass substrate | |
| CN103346242A (en) | LED device based on glass substrate and preparation method of LED device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: Wujiang District of Suzhou City, Jiangsu province 215000 Lili town FENHU Road No. 558 Patentee after: Suzhou Jing Pin new material limited company Address before: FenHu FenHu Avenue in Wujiang District of Suzhou City, Jiangsu province 215211 No. 558 No. two on the third floor of the building of scientific research innovation park (South) Patentee before: Suzhou Jingpin Optical-Electronical Technology Co., Ltd. |
|
| CP03 | Change of name, title or address |