CN103854702A - Storage media and floating detection method - Google Patents

Storage media and floating detection method Download PDF

Info

Publication number
CN103854702A
CN103854702A CN201210523912.8A CN201210523912A CN103854702A CN 103854702 A CN103854702 A CN 103854702A CN 201210523912 A CN201210523912 A CN 201210523912A CN 103854702 A CN103854702 A CN 103854702A
Authority
CN
China
Prior art keywords
line
detection
detection line
storage media
transmission line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201210523912.8A
Other languages
Chinese (zh)
Other versions
CN103854702B (en
Inventor
赖志菁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Winbond Electronics Corp
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to CN201210523912.8A priority Critical patent/CN103854702B/en
Publication of CN103854702A publication Critical patent/CN103854702A/en
Application granted granted Critical
Publication of CN103854702B publication Critical patent/CN103854702B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Dram (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)

Abstract

The invention discloses a storage media which comprises multiple memory cells, multiple transmission lines, a driving module and a floating detection module. The memory cells are used for storing data; the transmission lines are coupled to the memory cells; the driving module passes through the transmission lines and stores the memory cells; the floating detection module comprises a reset unit, multiple connectors and a detector; the reset unit is coupled to a detection line; each connector is coupled between a corresponding transmission line and the detection line; the detector can learn whether the state of at least one of the multiple transmission lines is a floating state according to the level of the detection line.

Description

Storage Media and unsteady detection method
Technical field
Whether the invention relates to a kind of Storage Media, relating to especially a kind of can sense transmission line be the Storage Media of a quick condition.
Background technology
Generally speaking, Storage Media can be divided into volatile storage and non-volatility memorizer.When after power supply supply failure, the storer that the stored data of storer just can disappear is called volatile storage.On the contrary, when after power supply supply failure, the storer that the stored data of storer can't thereby disappear is called non-volatility memorizer.
No matter be volatile storage or non-volatility memorizer, its inside all has many transmission lines (as character line and bit line).See through each transmission line, just can the corresponding memory cell of access.But, in the time there is abnormal (as broken string) in a certain transmission line, just the corresponding memory cell of access exception transmission line normally.Known settling mode is to utilize a transmission line for subsequent use to replace abnormal transmission line.This transmission line for subsequent use also has many memory cells for subsequent use, in order to replace the corresponding memory cell of abnormal transmission line.
Although transmission line for subsequent use and memory cell for subsequent use can replace abnormal transmission line and memory cell, but the abnormal corresponding memory cell of transmission line still has electric charge, and will become a noise source, affect electric charge adjacent or that the corresponding memory cell of all transmission lines is stored, and then cause normally access data of Storage Media.
Summary of the invention
The invention provides a kind of Storage Media, comprise multiple memory cells, multiple transmission line, a driver module and a unsteady detection module.Memory cell is in order to storage data.Transmission line couples memory cell.Driver module sees through transmission line, access/memory born of the same parents.Unsteady detection module comprises, a reset cell, multiple connector and a detecting device.Reset cell couples a detection line.Every a connector is coupled between a corresponding transmission line and detection line.Detecting device is accurate according to the position of described detection line, learns whether at least one state of transmission line is a quick condition.
The present invention separately provides a kind of detection method of floating, and is applicable to a Storage Media.Storage Media comprises multiple memory cells, multiple transmission line, a driver module and a unsteady detection module.Driver module sees through transmission line, access/memory born of the same parents.Transmission line sees through multiple connectors, is couple to a detection line.Unsteady detection method of the present invention comprises: the position of setting detection line is accurate; Whether the position standard that judges detection line equals a default position standard; And preset position on time when the position standard of detection line is not equal to, the state of at least one of expression transmission line is a quick condition.
For the features and advantages of the present invention can be become apparent, cited below particularly go out preferred embodiment, and coordinate appended graphicly, be described in detail below:
Brief description of the drawings
Fig. 1 is that one of Storage Media of the present invention may schematic diagram.
Fig. 2 is transmission line generation abnormality schematic diagram.
The possible detection mode that Fig. 3 A, 3B, Fig. 4, Fig. 5 A and 5B are unsteady detection module of the present invention.
Fig. 6 ~ 7 are other possibility embodiment of Storage Media of the present invention.
Fig. 8 A, 8B are the possible process flow diagram of unsteady detection method of the present invention.
Drawing reference numeral:
100: Storage Media;
110: driver module;
140,700: detection module floats;
120: line driver;
130: row driver;
121: decoding unit;
101: address signal;
142: detecting device;
210,144,610,640:P type electric crystal;
220,145:N type electric crystal;
141,600,710: reset cell;
143: detection line;
300,400A, 400B, 400C, 500: during replacement;
310,320,410A, 410B, 420A, 420B, 430A, 430B, 510: between detection period;
440,450,460,520A, 520B: during triggering;
600: reset cell;
620: latch unit;
630: phase inverter;
WL 0~ WL n, RWL 0~ RWL k, BL 0~ BL m: transmission line;
M 00~ M mn, RM 00~ RM mk: memory cell;
OT 0~ OT n, ROT 0~ ROT k: output stage;
V dD, V nN, VH, Vss, V bB: operating voltage;
CN 0~ CN n, RCN 0~ RCN k: connector;
S rET: reset signal;
SW: switch;
S eR: exception bits standard;
Cs: storage capacitors;
S nOR: normal position is accurate;
S 143: position is accurate.
Embodiment
Fig. 1 is that one of Storage Media of the present invention may schematic diagram.As shown in the figure, Storage Media 100 comprises a driver module 110, transmission line WL 0~ WL n, RWL 0~ RWL k, BL 0~ BL m, memory cell M 00~ M mm, RM 00~ RM mkand one float detection module 140.In the present embodiment, transmission line RWL 0~ RWL kfor transmission line for subsequent use, in order to replace transmission line WL 0~ WL nin abnormal transmission line.
For example, when transmission line WL is learnt in tester's judgement 0occur when abnormal, tester is just with transmission line RWL 0replace transmission line WL 0, wherein transmission line RWL 0the memory cell RM coupling 00~ RM m0also will replace transmission line WL 0the memory cell M coupling 00~ M m0.
Driver module 110 sees through transmission line WL 0~ WL n, RWL 0~ RWL k, BL 0~ BL m, access/memory born of the same parents M 00~ M mn, RM 00~ RM mk.In the present embodiment, driver module 110 comprises a line driver 120 and a row driver 130.Line driver 120 is in order to trigger transmission line WL 0~ WL n, RWL 0~ RWL k.In the present embodiment, transmission line WL 0~ WL nfor character line (wordline), and transmission line RWL 0~ RWL kfor character line for subsequent use (redundancy wordline).
The present invention does not limit the inside structure of line driver 120.In a possibility embodiment, line driver 120 has a decoding unit 121 and output stage OT 0~ OT n, ROT 0~ ROT k.Decoding unit 121 address signal 101 of decoding, and according to decoded result, control output stage OT 0~ OT n, ROT 0~ ROT k, in order to trigger transmission line WL 0~ WL n, RWL 0~ RWL k, namely control transmission line WL 0~ WL n, RWL 0~ RWL kstate.
In the present embodiment, output stage OT 0~ OT n, ROT 0~ ROT kformed by a P type electric crystal and a N-type electric crystal, but not in order to limit the present invention.With output stage OT 0for example, P type electric crystal and N-type electric crystal system are series at operating voltage V dDwith V nNbetween.In a possibility embodiment, operating voltage V dDbe greater than operating voltage V nN, and operating voltage V nNit may be a negative value.
Fig. 2 is transmission line generation abnormality schematic diagram.Event 1 refers to P type electric crystal 210 and the grid of N-type electric crystal 220 open circuit (open).Event 2A refers to that the source electrode of P type electric crystal 210 opens circuit.Event 2B refers to that the drain electrode of P type electric crystal 210 opens circuit.Event 3 refers to transmission line WL 0open circuit.Event 4A refers to that the drain electrode of N-type electric crystal 220 opens circuit.Event 4B refers to that the source electrode of N-type electric crystal 220 opens circuit.When event 1 ~ 4B any one occur time, line driver 120 cannot normally be controlled transmission line WL 0state.Therefore, transmission line WL 0state be a quick condition.
Go back to Fig. 1, row driver 130 sees through transmission line BL 0~ BL m, acquisition memory cell M 00~ M mn, RM 00~ RM mkstored data, or data are write to memory cell M 00~ M mn, RM 00~ RM mk.One may embodiment in, row driver 130 is a detecting amplifier (sense amplifier), in order to detect and to amplify the stored data of corresponding memory cell.In the present embodiment, transmission line BL 0~ BL mfor bit line (bitline).
Memory cell M 00~ M mn, RM 00~ RM mkall there is a switch SW and a storage capacitors Cs.When the state of a transmission line occurs when abnormal, the electric charge that couples the storage capacitors of this defeated line will affect the capturing result of row driver 130.For example, as transmission line WL 0while there is abnormal (as broken string), line driver 120 cannot normally be controlled transmission line WL 0state.Therefore, tester utilizes transmission line RWL 0replace transmission line WL 0.Now, due to transmission line WL 0state be quick condition, due to transmission line WL 0corresponding memory cell M 00~ M m0stored electric charge may affect adjacent memory cell M 01~ M m1or the stored electric charge of all memory cells, therefore, transmission line WL 0corresponding memory cell M 00~ M m0to become a noise source.
In the present embodiment, unsteady detection module 140 sense transmission line WL 0~ WL n, RWL 0~ RWL kstate, in order to learn transmission line WL 0~ WL n, RWL 0~ RWL k, BL 0~ BL mstate whether be quick condition.If so, Storage Media 100 is considered as defective products by tester.On the contrary, if transmission line WL 0~ WL n, RWL 0~ RWL k, BL 0~ BL mstate be not quick condition, Storage Media 100 is non-defective unit.
As shown in the figure, unsteady detection module 140 comprises a reset cell 141, connector CN 1~ CN n, RCN 0~ RCN kan and detecting device 142.Reset cell 141 couples a detection line 143, and in order to during a replacement, the position of setting detection line 143 is accurate.
The present invention does not limit the embodiment of reset cell 141.In the present embodiment, reset cell 141 is a P type electric crystal 144.In a possibility embodiment, P type electric crystal 144 is to be integrated among row driver 130.As shown in the figure, the grid of P type electric crystal 144 receives a reset signal S rET, its source electrode receives an operating voltage VH, and its drain electrode couples detection line 143.In other embodiments, reset cell 141 can be a N-type electric crystal.
Connector CN 0~ CN nand RCN 0~ RCN kbe coupled between a corresponding transmission line and detection line 143.In the present embodiment, unsteady detection module 140 is in order to sense transmission line WL 0~ WL n, RWL 0~ RWL kstate, therefore, connector CN 0~ CN n, RCN 0~ RCN kto couple character line (as WL 0~ WL n, RWL 0~ RWL k).The present invention is limiting connector CN not 0~ CN n, RCN 0~ RCN kkind.In a possibility embodiment, connector CN 0~ CN n, RCN 0~ RCN kwith memory cell M 00~ RM mkinterior switch SW is N-type electric crystal.
With connector CN 0example, the grid of N-type electric crystal 145 couples transmission line WL 0, its drain electrode couples detection line 143, and its source electrode receives an operating voltage Vss.In the present embodiment, operating voltage Vss is less than operating voltage VH.In a possibility embodiment, operating voltage Vss is a ground voltage, or is less than ground voltage.In another embodiment, operating voltage Vss is greater than operating voltage V nN.In other embodiments, the base stage of N-type electric crystal 145 receives a base voltage V bB.In a possibility embodiment, operating voltage Vss equals base voltage V bB.
Detecting device 142 is accurate according to the position of detection line 143, learns transmission line WL 0~ RWL kat least one state whether be a quick condition.Fig. 3 A is the detection mode of unsteady detection module 140 of the present invention.First, line driver 120 does not trigger transmission line WL 0~ RWL k, therefore, transmission line WL 0~ WL mand RWL 0~ RWL kfor low level state.
During resetting 300, reset signal S rETfor low level, thereby conducting P type electric crystal 144, making the position standard of detection line 143 is high levels.As reset signal S rETwhile being changed to high levels by low level, it is accurate that the position standard of detection line 143 should remain on a default position.For example, the position standard of detection line 143 should remain on high levels (as symbol S nORshown in).But, as transmission line WL 0~ WL mand RWL 0~ RWL kthe abnormal state of one time, it is accurate that a position brigadier for detection line 143 is not equal to default position.In a possibility embodiment, the position of detection line 143 will definitely be changed to low level (as symbol S eRshown in).
Therefore, between a detection period 310, it is accurate that detecting device 142 detects the position of detection line 143.When the position of detection line 143 standard is not equal to a default position on time (as symbol S eRshown in), detecting device 142 is judged transmission line WL 0~ WL mand RWL 0~ RWL kat least one state be quick condition.One may embodiment in, unsteady transmission line is to cause because of event 1,3,4A or 4B.
Fig. 3 B is another detection mode of unsteady detection module 140 of the present invention.As reset signal S rETwhile being changed to low level by high levels, represent to start to set the position standard of detection line 143.Position at detection line 143 is certainly held in after high levels, reset signal S rETstill remain on low level.In this example, although P type electric crystal 144 continues conducting, as long as transmission line WL 0~ WL mand RWL 0~ RWL kat least one state while being quick condition, the position standard of detection line 143 just no longer remains on high levels.As symbol S eRshown in, between detection period 320, a position brigadier for detection line 143 declines gradually.
Fig. 4 is another detection mode of unsteady detection module 140 of the present invention.400A during resetting, reset signal S rETfor low level, thereby conducting P type electric crystal 144, make the accurate S in position of detection line 143 143for high levels.During resetting after 400A, reset signal S rETfor high levels, thereby not conducting P type electric crystal 144.Now, the accurate S in position of detection line 143 143should remain on a default position accurate (as high levels).
During triggering 440, line driver 120 triggers transmission line WL 0.Now, connector CN 0be switched on.Therefore, the accurate S in position of detection line 143 143decline gradually.Then, 400B during resetting, P type electric crystal 144 is switched on, therefore, the accurate S in position of detection line 143 143can rise to again a default position accurate (as high levels).Then, during triggering 450, line driver 120 triggers transmission line WL 1.Now, connector CN 1be switched on.Therefore, the accurate S in position of detection line 143 143can again decline gradually.
Detecting device 142 is according to the accurate S in position of detection line 143 143, just can judge transmission line WL 0~ RWL kstate whether be quick condition.In a possibility embodiment, detecting device 142 410A between detection period judges the accurate S in position of detection line 143 143.If the accurate S in position of detection line 143 143be not equal to a default position accurate, presentation of events 1,3,4A or 4B occur, thereby cause transmission line WL 0~ RWL kat least one state be quick condition.
Then, detecting device 142 410B between detection period, judge detection line 143 position accurate S 143.If the accurate S in position of detection line 143 143equal default position accurate, presentation of events 2A or 2B occur, thereby cause the accurate S in position of detection line 143 143cannot decline.Therefore, tester, according to the testing result of detecting device 142, just can learn transmission line WL 0~ RWL kat least one state be quick condition.
In the present embodiment, between detection period in 410A, 420A, 430A, the accurate S in position of detection line 143 143should equal a default position accurate, otherwise, transmission line WL just represented 0~ RWL kat least one state be quick condition.In addition, between detection period in 410B, 420B, 430B, the accurate S in position of detection line 143 143should be not equal to default position accurate, otherwise, transmission line WL just represented 0~ RWL kat least one state be quick condition.
Fig. 5 A is another detection mode of unsteady detection module 140 of the present invention.Fig. 5 A similar diagram 3, difference be Fig. 5 A have one initial during 520A.During initial 520A early than reset during 500.During initial, line driver 120 sequentially triggers transmission line WL 0~ RWL k.Therefore, the accurate S in position on detection line 143 143should be that low level is (as symbol S nORshown in).
Then, during resetting 500, reset signal S rETfor low level, therefore, the accurate S in position on detection line 143 143to be changed to high levels by low level.As reset signal S rETwhile being changed to high levels by low level, the position standard of detection line 143 should remain on high levels (as symbol S nORshown in).Therefore, between detection period 510, detecting device 142 is according to the accurate S in position of detection line 143 143, learn whether quick condition occurs.But, as the accurate S in the position of detection line 143 143while not remaining on high levels (as symbol S eRshown in), represent to occur quick condition.
Fig. 5 B is another detection mode of unsteady detection module 140 of the present invention.Fig. 5 B similar diagram 5A, difference is 520B during Fig. 5 B initial, driver 120 triggers transmission line WL simultaneously 0~ RWL k.Because the operating principle of Fig. 5 B is similar to Fig. 5 A, therefore repeat no more.
Fig. 6 is another possibility embodiment of Storage Media of the present invention.Fig. 6 similar diagram 1, difference is, the reset cell 600 of Fig. 6 comprises an electric crystal 610 and a latch unit 620.In the present embodiment, electric crystal 610 is a P type electric crystal, but not in order to limit the present invention.In other embodiments, electric crystal 610 can be a N-type electric crystal.As shown in the figure, the grid of electric crystal 610 receives a reset signal S rET, its source electrode receives an operating voltage VH, and its drain electrode couples detection line 143.
The position of latch unit 620 breech lock detection lines 143 is accurate.In the present embodiment, latch unit 620 comprises a phase inverter 630 and an electric crystal 640.The input end of phase inverter 630 and output terminal couple respectively drain electrode and the grid of electric crystal 640.The source electrode of electric crystal 640 receives operating voltage VH, and its drain electrode couples detection line 143.
Fig. 7 is another possibility embodiment of Storage Media of the present invention.Fig. 7 similar diagram 1, difference is that unsteady detection module 700 couples transmission line BL 0~ BL m, in order to judge transmission line BL 0~ BL mat least one state whether be quick condition.Because the operating principle of Fig. 7 is identical with Fig. 1, therefore repeat no more.In a possibility embodiment, can utilize the reset cell 600 shown in Fig. 6 to replace the reset cell 710 of Fig. 7.In another embodiment, the unsteady detection module 700 of Fig. 7 can be applied in Fig. 1.Therefore, Storage Media will have two unsteady detection modules, respectively detection of vertical transmission line BL 0~ BL mand horizontal transport line WL 0~ WL n, RWL 0~ RWL kstate.
Fig. 8 A is that one of unsteady detection method of the present invention may process flow diagram.Unsteady detection method of the present invention can be applicable in the Storage Media shown in Fig. 1,6 and 7.For convenience of description, below will be taking Fig. 1 as example.First, trigger transmission line WL 0~ RWL k(step S800).The present invention does not limit trigger sequence.In a possibility embodiment, can or sequentially trigger transmission line WL simultaneously 0~ RWL k.In addition, step S800 inessential.In other embodiments, can omit step S800.
Then, set the position accurate (step S810) of detection line 143.In a possibility embodiment, can utilize a reset cell (as 141), the position of setting detection line 143 is accurate.Whether the position standard that then, judges detection line equals a default position accurate (a step S820).
When the position of detection line 143 standard is not equal to default position on time, detecting device 142 is exported one first testing result, represents transmission line WL 0~ RWL kat least one state be a quick condition (step S830).On the contrary, when the position of detection line 143 standard equals default position on time, detecting device 142 is exported one second testing result, represents transmission line WL 0~ RWL kstate be not a quick condition (step S840).
Fig. 8 B is another possibility process flow diagram of unsteady detection method of the present invention.Fig. 8 B similar diagram 8A, difference is to omit step S800, and increases step S850 and S860.When the position of detection line 143 standard equals default position on time, trigger transmission line WL 0~ RWL kin the first transmission line (step S850), more whether the position standard that judges detection line 143 equals default position accurate (a step S860).
When the position of detection line 143 standard equals default position on time, represent transmission line WL 0~ RWL kat least one state be a quick condition (step S830).When the position of detection line 143 standard is not equal to default position on time, represent transmission line WL 0~ RWL kbe not quick condition (step S840), therefore, get back to step S810, the position of again setting detection line 143 is accurate, and again judges whether the position standard of detection line 143 equals default position accurate (step S820).
When the position of detection line 143 standard equals default position on time, trigger next transmission lines (step S850), and judge whether the position standard of detection line 143 equals default position accurate (a step S860).When the position of detection line 143 standard is not equal to default position standard, get back to step S810, and after step S820, trigger next transmission lines, until all transmission lines were all triggered.
Unless otherwise defined, all belong to (comprising technology and science vocabulary) persond having ordinary knowledge in the technical field of the present invention's general understanding at this all vocabulary.In addition,, unless clear expression, the definition of vocabulary in general dictionary should be interpreted as consistent with meaning in the article of its correlative technology field, and should not be construed as perfect condition or too formal voice.
Although the present invention discloses as above with preferred embodiment; so it is not in order to limit the present invention; under any, in technical field, have and conventionally know the knowledgeable; without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore protection scope of the present invention is when being as the criterion depending on the claim person of defining.

Claims (14)

1. a Storage Media, is characterized in that, described Storage Media comprises:
Multiple memory cells, in order to storage data;
Multiple transmission lines, couple the described memory cell of Denging;
One driver module, sees through the described transmission line that waits, multiple memory cells described in access;
One unsteady detection module, comprising:
One reset cell, couples a detection line;
Multiple connectors, every a connector is coupled between a corresponding transmission line and described detection line; And
One detecting device, accurate according to the position of described detection line, learn whether at least one state of described multiple transmission lines is a quick condition.
2. Storage Media as claimed in claim 1, is characterized in that, during a replacement, it is accurate that described reset cell is set the position of described detection line; Between one first detection period, it is accurate that described detecting device detects the position of described detection line, and when the position of described detection line standard is not equal to a default position on time, described detecting device judges that at least one state of described multiple transmission lines is described quick condition.
3. Storage Media as claimed in claim 1, is characterized in that, described multiple transmission lines comprise multiple character lines and multiple bit line, and described multiple connectors are to couple one to one described multiple character line.
4. Storage Media as claimed in claim 3, it is characterized in that, between one second detection period, it is one first character line in described multiple character line that described driver module triggers, and it is accurate that described detecting device detects the position of described detection line, when the position of described detection line standard equals described default position on time, described detecting device judges that the state of described the first character line is described quick condition.
5. Storage Media as claimed in claim 3, is characterized in that, before during described replacement one initial during, described driver module sequentially triggers described multiple character line.
6. Storage Media as claimed in claim 3, is characterized in that, before during described replacement one initial during, described driver module triggers described multiple character line simultaneously.
7. Storage Media as claimed in claim 3, is characterized in that, described reset cell is to be an electric crystal, and its grid receives a reset signal, and its source electrode receives one first operating voltage, and its drain electrode couples described detection line.
8. Storage Media as claimed in claim 3, is characterized in that, described reset cell comprises:
One first electric crystal, its grid receives a reset signal, and its source electrode receives one first operating voltage, and its drain electrode couples described detection line; And
One latch unit, accurate in order to the position of detection line described in breech lock.
9. Storage Media as claimed in claim 8, is characterized in that, described latch unit comprises:
One second electric crystal, its source electrode receives described the first operating voltage, and its drain electrode couples described detection line; And
One phase inverter, its input end couples the drain electrode of described the second electric crystal, and its output terminal couples the grid of described the second electric crystal.
10. Storage Media as claimed in claim 3, it is characterized in that, each of described multiple connectors is an electric crystal, its grid couples a corresponding character line, its drain electrode couples described detection line, its source electrode receives one second operating voltage, and described the second operating voltage is less than described the first operating voltage.
11. 1 kinds of unsteady detection methods, be applicable to a Storage Media, it is characterized in that, described Storage Media comprises multiple memory cells, multiple transmission line, a driver module and a unsteady detection module, described driver module sees through described multiple transmission lines, multiple memory cells described in access, and described multiple transmission lines see through multiple connectors, be couple to a detection line, described unsteady detection method comprises:
The position of setting described detection line is accurate;
Whether the position standard that judges described detection line equals a default position standard; And
When the position of described detection line standard, to be not equal to described default position punctual, represents that at least one state of described multiple transmission lines is a quick condition.
12. unsteady detection methods as claimed in claim 11, is characterized in that, described method more comprises:
Trigger described one first transmission line waiting in transmission line;
Whether the position standard that judges described detection line equals described default position standard; And
When the position of described detection line standard equals described default position on time, the state that represents described the first transmission line is described quick condition.
13. unsteady detection methods as claimed in claim 11, is characterized in that, described method more comprises:
Setting before described detection line, sequentially trigger described multiple transmission line.
14. unsteady detection methods as claimed in claim 11, is characterized in that, described method more comprises:
Setting before described detection line, trigger described multiple transmission line simultaneously.
CN201210523912.8A 2012-12-06 2012-12-06 Store media and floating detection method Active CN103854702B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210523912.8A CN103854702B (en) 2012-12-06 2012-12-06 Store media and floating detection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210523912.8A CN103854702B (en) 2012-12-06 2012-12-06 Store media and floating detection method

Publications (2)

Publication Number Publication Date
CN103854702A true CN103854702A (en) 2014-06-11
CN103854702B CN103854702B (en) 2016-12-21

Family

ID=50862251

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210523912.8A Active CN103854702B (en) 2012-12-06 2012-12-06 Store media and floating detection method

Country Status (1)

Country Link
CN (1) CN103854702B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5748545A (en) * 1997-04-03 1998-05-05 Aplus Integrated Circuits, Inc. Memory device with on-chip manufacturing and memory cell defect detection capability
CN101304169A (en) * 2007-05-10 2008-11-12 三星电子株式会社 Irregular voltage detection and cutoff circuit using bandgap reference voltage generation circuit
CN101859594A (en) * 2010-07-01 2010-10-13 秉亮科技（苏州）有限公司 Self-timing write tracking type static random memory integrated with weak write test function and calibration method thereof
US20120008385A1 (en) * 2010-07-09 2012-01-12 Yoo Byoung Sung Semiconductor memory device and method of operating the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5748545A (en) * 1997-04-03 1998-05-05 Aplus Integrated Circuits, Inc. Memory device with on-chip manufacturing and memory cell defect detection capability
CN101304169A (en) * 2007-05-10 2008-11-12 三星电子株式会社 Irregular voltage detection and cutoff circuit using bandgap reference voltage generation circuit
CN101859594A (en) * 2010-07-01 2010-10-13 秉亮科技（苏州）有限公司 Self-timing write tracking type static random memory integrated with weak write test function and calibration method thereof
US20120008385A1 (en) * 2010-07-09 2012-01-12 Yoo Byoung Sung Semiconductor memory device and method of operating the same

Also Published As

Publication number Publication date
CN103854702B (en) 2016-12-21

Similar Documents

Publication Publication Date Title
US10880103B2 (en) SRAM-based authentication circuit
US8531899B2 (en) Methods for testing a memory embedded in an integrated circuit
US8560931B2 (en) Low power retention random access memory with error correction on wake-up
EP1255197B1 (en) System and method for correcting soft errors in random access memory devices
US20230031649A1 (en) Static random-access memory and fault detection circuit thereof
US4862416A (en) Semiconductor memory device with redundant memory cell
CN101236791A (en) Apparatus, circuit and method for multi-segment SRAM
KR100959848B1 (en) Semiconductor Memory and Test Systems
US9672939B2 (en) Memory devices, testing systems and methods
CN101065809B (en) Sram test method and SRAM test arrangement to detect weak cells
US9208902B2 (en) Bitline leakage detection in memories
US8717829B2 (en) System and method for soft error detection in memory devices
JPH0745096A (en) Semiconductor memory with bit error correcting function
KR20170016640A (en) Semiconductor apparatus and repair method of the same
US8320207B2 (en) Integrated solution for identifying malfunctioning components within memory devices
US7548473B2 (en) Apparatus and methods for determining memory device faults
CN103854702A (en) Storage media and floating detection method
US9997255B2 (en) Testing retention mode of an SRAM array
US8526261B2 (en) Integrated circuit memory power supply
TWI484496B (en) Storage medium and floating detection method
US7719908B1 (en) Memory having read disturb test mode
CN114121084B (en) Storage device, detection method and device, and storage medium
US20230223098A1 (en) Method and device for testing memory
US11715548B2 (en) Repair circuit and memory
JP2007250060A (en) Semiconductor storage device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant