CN103854702B - Store media and floating detection method - Google Patents
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- CN103854702B CN103854702B CN201210523912.8A CN201210523912A CN103854702B CN 103854702 B CN103854702 B CN 103854702B CN 201210523912 A CN201210523912 A CN 201210523912A CN 103854702 B CN103854702 B CN 103854702B
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Abstract
A kind of storage media, including multiple memory cells, multiple transmission line, driving module and a floating detection module.Memory cell is in order to store data.Transmission line couples memory cell.Drive module through transmission line, access/memory born of the same parents.Floating detection module includes, a reset cell, multiple adapter and a detector.Reset cell couples a detection line.Every a connector is coupled between a corresponding transmission line and detection line.Detector, according to the level of described detection line, learns whether the state of at least one of the plurality of transmission line is a quick condition.
Description
Technical field
The invention relates to a kind of storage media, can detect whether transmission line is a floating type in particular to one
The storage media of state.
Background technology
It is said that in general, store media to be divided into volatile storage and non-volatility memorizer.When power supply supply discontinuity
After, the memorizer that the data stored by memorizer will disappear is referred to as volatile storage.On the contrary, when power supply supply discontinuity
After, the data stored by memorizer can't thus disappear memorizer be referred to as non-volatility memorizer.
Whether volatile storage or non-volatility memorizer, is respectively provided with many transmission lines (such as word-line inside it
And bit line).Through each transmission line, corresponding memory cell just can be accessed.But, when a certain transmission line occur abnormal (as
Broken string) time, just cannot normally memory cell corresponding to access exception transmission line.Known settling mode is to utilize a standby biography
Defeated line replaces abnormal transmission line.This standby transport line also has many standby memory cells, in order to replace corresponding to abnormal transmission line
Memory cell.
Although standby transport line and standby memory cell may replace abnormal transmission line and memory cell, but abnormal transmission line institute is right
The memory cell answered still has electric charge, and will become a noise source, affects the memory cell corresponding to adjacent or all transmission lines and is stored up
The electric charge deposited, in turn results in storage media and cannot normally access data.
Summary of the invention
The present invention provides a kind of and stores media, including multiple memory cells, multiple transmission line, driving module and a floating
Detection module.Memory cell is in order to store data.Transmission line couples memory cell.Drive module through transmission line, access/memory born of the same parents.Floating
Dynamic detection module includes, a reset cell, multiple adapter and a detector.Reset cell couples a detection line.Each company
Connect device to be coupled between a corresponding transmission line and detection line.Detector, according to the level of described detection line, learns transmission line
Whether the state of at least one is a quick condition.
The present invention separately provides a kind of floating detection method, it is adaptable to one stores media.Store media include multiple memory cell,
Multiple transmission lines, driving module and a floating detection module.Drive module through transmission line, access/memory born of the same parents.Transmission line
Through multiple adapters, it is couple to a detection line.The floating detection method of the present invention includes: set the level of detection line；Judge
Whether the level of detection line presets level equal to one；And when the level detecting line is not equal to preset level, represent transmission line
The state of at least one be a quick condition.
For the features and advantages of the present invention can be become apparent, cited below particularly go out preferred embodiment, and coordinate institute's accompanying drawing
Formula, is described in detail below:
Accompanying drawing explanation
Fig. 1 is the possible schematic diagram storing media of the present invention.
Fig. 2 is transmission line generation abnormality schematic diagram.
Fig. 3 A, 3B, Fig. 4, Fig. 5 A and 5B is the possible detection mode of the floating detection module of the present invention.
Fig. 6 ~ 7 are other possible embodiment storing media of the present invention.
Fig. 8 A, 8B are the possible flow chart of the floating detection method of the present invention.
Drawing reference numeral:
100: store media；
110: drive module；
140,700: floating detection module；
120: line driver；
130: row driver；
121: decoding unit；
101: address signal；
142: detector；
210,144,610,640:P type electric crystal；
220,145:N type electric crystal；
141,600,710: reset cell；
143: detection line；
300,400A, 400B, 400C, 500: during replacement；
310,320,410A, 410B, 420A, 420B, 430A, 430B, 510: during detection；
440,450,460,520A, 520B: during triggering；
600: reset cell；
620: latch unit；
630: phase inverter；
WL0~WLn、RWL0~RWLk、BL0~BLm: transmission line；
M00~Mmn、RM00~RMmk: memory cell；
OT0~OTn、ROT0~ROTk: output stage；
VDD、VNN、VH、Vss、VBB: operation voltage；
CN0~CNn、RCN0~RCNk: adapter；
SRET: reset signal；
SW: switch；
SER: abnormal level；
Cs: storage capacitors；
SNOR: normal level；
S143: level.
Detailed description of the invention
Fig. 1 is the possible schematic diagram storing media of the present invention.As it can be seen, store media 100 to include a driving mould
Block 110, transmission line WL0~WLn、RWL0~RWLk、BL0~BLm, memory cell M00~Mmm、RM00~RMmkAnd a floating detection module
140.In the present embodiment, transmission line RWL0~RWLkFor standby transport line, in order to replace transmission line WL0~WLnMiddle abnormal biography
Defeated line.
For example, judge to learn transmission line WL as tester0When occurring abnormal, tester is just with transmission line RWL0
Replace transmission line WL0, wherein transmission line RWL0The memory cell RM coupled00~RMm0Also transmission line WL will be replaced0The memory coupled
Born of the same parents M00~Mm0。
Drive module 110 through transmission line WL0~WLn、RWL0~RWLk、BL0~BLm, access/memory born of the same parents M00~Mmn、RM00~
RMmk.In the present embodiment, module 110 is driven to include line driver 120 and a row driver 130.Line driver 120 is used
To trigger transmission line WL0~WLn、RWL0~RWLk.In the present embodiment, transmission line WL0~WLnFor word-line (wordline), and pass
Defeated line RWL0~RWLkFor standby word-line (redundancy wordline).
The present invention does not limit the inside structure of line driver 120.In a possible embodiment, line driver 120 has
One decoding unit 121 and output stage OT0~OTn、ROT0~ROTk.Decoding unit 121 decodes an address signal 101, and according to solution
Code result, controls output stage OT0~OTn、ROT0~ROTk, in order to trigger transmission line WL0~WLn、RWL0~RWLk, namely control to pass
Defeated line WL0~WLn、RWL0~RWLkState.
In the present embodiment, output stage OT0~OTn、ROT0~ROTkIt is by a p-type electric crystal and a N-type electric crystal institute structure
Become, but and be not used to limit the present invention.With output stage OT0As a example by, p-type electric crystal is series at operation voltage with N-type electric crystal system
VDDWith VNNBetween.In a possible embodiment, operate voltage VDDMore than operation voltage VNN, and operate voltage VNNMay be one
Negative value.
Fig. 2 is transmission line generation abnormality schematic diagram.Event 1 refers to the grid of p-type electric crystal 210 and N-type electric crystal 220
There is open circuit (open) in pole.Event 2A refers to the source electrode generation open circuit of p-type electric crystal 210.Event 2B refers to p-type electric crystal 210
Drain electrode generation open circuit.Event 3 refers to transmission line WL0There is open circuit.It is disconnected that event 4A refers to that the drain electrode of N-type electric crystal 220 occurs
Road.Event 4B refers to the source electrode generation open circuit of N-type electric crystal 220.When any one generation of event 1 ~ 4B, line driver 120
Will be unable to normally control transmission line WL0State.Therefore, transmission line WL0State be a quick condition.
Going back to Fig. 1, row driver 130 is through transmission line BL0~BLm, capture memory cell M00~Mmn、RM00~RMmkStored
Data, or write data into memory cell M00~Mmn、RM00~RMmk.In a possible embodiment, row driver 130 is an inspection
Amplifier (sense amplifier), in order to detect and to amplify the data stored by corresponding memory cell.At the present embodiment
In, transmission line BL0~BLmFor bit line (bitline).
Memory cell M00~Mmn、RM00~RMmkIt is respectively provided with a switch SW and storage capacitors Cs.When the state of a transmission line is sent out
During raw exception, the electric charge of the storage capacitors coupling this defeated line will affect the capturing result of row driver 130.For example, biography is worked as
Defeated line WL0When there is abnormal (such as broken string), line driver 120 cannot normally control transmission line WL0State.Therefore, test person
Member utilizes transmission line RWL0Replace transmission line WL0.Now, due to transmission line WL0State be quick condition, due to transmission line WL0
Corresponding memory cell M00~Mm0Stored electric charge may affect adjacent memory born of the same parents M01~Mm1Or stored by all memory cells
Electric charge, therefore, transmission line WL0Corresponding memory cell M00~Mm0A noise source will be become.
In the present embodiment, floating detection module 140 detects transmission line WL0~WLn、RWL0~RWLkState, in order to learn
Transmission line WL0~WLn、RWL0~RWLk、BL0~BLmState whether be quick condition.The most then tester will store media
100 are considered as defective products.If on the contrary, transmission line WL0~WLn、RWL0~RWLk、BL0~BLmState be not quick condition, then store
Media 100 are non-defective unit.
As it can be seen, floating detection module 140 includes a reset cell 141, adapter CN1~CNn、RCN0~RCNkAnd
One detector 142.Reset cell 141 couples a detection line 143, in order to, during one resets, to set the level of detection line 143.
The present invention does not limit the embodiment of reset cell 141.In the present embodiment, reset cell 141 is to be a p-type
Electric crystal 144.In a possible embodiment, p-type electric crystal 144 is to be integrated among row driver 130.As it can be seen, p-type is electric
The grid of crystal 144 receives a reset signal SRET, its source electrode receives an operation voltage VH, and its drain electrode couples detection line 143.?
In other embodiments, reset cell 141 can be a N-type electric crystal.
Adapter CN0~CNnAnd RCN0~RCNkIt is coupled between a corresponding transmission line and detection line 143.At the present embodiment
In, floating detection module 140 is to detect transmission line WL0~WLn、 RWL0~RWLkState, therefore, adapter CN0~CNn、
RCN0~RCNkIt is coupled to word-line (such as WL0~WLn、RWL0~RWLk).The present invention not limiting connector CN0~CNn、RCN0~RCNk
Kind.In a possible embodiment, adapter CN0~CNn、RCN0~RCNkWith memory cell M00~RMmkInterior switch SW is N-type
Electric crystal.
With adapter CN0Example, the grid coupled transmission lines WL of N-type electric crystal 1450, its drain electrode couples detection line 143, its source
Pole receives an operation voltage Vss.In the present embodiment, operation voltage Vss is less than operation voltage VH.In a possible embodiment,
Operation voltage Vss is a ground voltage, or less than ground voltage.In another embodiment, operation voltage Vss is more than operation electricity
Pressure VNN.In other embodiments, the base stage of N-type electric crystal 145 receives a base voltage VBB.In a possible embodiment, operation electricity
Pressure Vss is equal to base voltage VBB。
Detector 142, according to the level of detection line 143, learns transmission line WL0~RWLkThe state of at least one be whether
One quick condition.Fig. 3 A is the detection mode of the floating detection module 140 of the present invention.First, line driver 120 does not trigger transmission
Line WL0~RWLk, therefore, transmission line WL0~WLmAnd RWL0~RWLkFor low level state.
Resetting period 300, reset signal SRETFor low level, thus conducting p-type electric crystal 144 so that detection line 143
Level be high levels.As reset signal SRETWhen being changed to high levels by low level, the level of detection line 143 should be maintained at one
Preset level.For example, the level of detection line 143 should be maintained at high levels (such as symbol SNORShown in).But, work as transmission line
WL0~WLmAnd RWL0~RWLkThe abnormal state of one time, the level of detection line 143 will be equal to preset level.May one
In embodiment, the level of detection line 143 may be changed to low level (such as symbol SERShown in).
Therefore, period 310, the level of detector 142 detection detection line 143 are detected one.When detecting the level of line 143 not
(such as symbol S when presetting level equal to oneERShown in), detector 142 judges transmission line WL0~WLmAnd RWL0~RWLkAt least one
State be quick condition.One may in embodiment, the transmission line of floating be because of event 1,3,4A or 4B caused.
Fig. 3 B is another detection mode of the floating detection module 140 of the present invention.As reset signal SRETChanged by high levels
During to low level, represent the level starting to set detection line 143.After the level of detection line 143 is maintained at high levels, reset
Signal SRETRemain at low level.In this instance, although p-type electric crystal 144 constant conduction, but as long as transmission line WL0~WLmAnd
RWL0~RWLkThe state of at least one when being quick condition, the level of detection line 143 is just no longer held in high levels.Such as symbol
SERShown in, detecting period 320, the level of detection line 143 will be gradually reduced.
Fig. 4 is another detection mode of the floating detection module 140 of the present invention.Resetting period 400A, reset signal SRET
For low level, thus conducting p-type electric crystal 144 so that level S of detection line 143143For high levels.Resetting period 400A
After, reset signal SRETFor high levels, thus it is not turned on p-type electric crystal 144.Now, level S of line 143 is detected143Should be maintained at
One presets level (such as high levels).
Triggering period 440, line driver 120 triggers transmission line WL0.Now, adapter CN0Switched on.Therefore, detection
Level S of line 143143It is gradually reduced.Then, resetting period 400B, p-type electric crystal 144 is switched on, and therefore, detects line 143
Level S143One can be risen to again and preset level (such as high levels).Then, triggering period 450, line driver 120 triggers and passes
Defeated line WL1.Now, adapter CN1Switched on.Therefore, level S of line 143 is detected143Can again be gradually reduced.
Detector 142 is according to level S of detection line 143143, just can determine whether out transmission line WL0~RWLkState whether be floating
Dynamic state.In a possible embodiment, detector 142 judges level S of detection line 143 detecting period 410A143.If detection
Level S of line 143143Be not equal to preset level, represent event 1,3,4A or 4B occur, thus result in transmission line WL0~RWLk's
The state of at least one is quick condition.
Then, detector 142 is detecting period 410B, it is judged that level S of detection line 143143.If the level of detection line 143
S143Equal to presetting level, represent that event 2A or 2B occur, thus result in level S of detection line 143143Cannot decline.Therefore, survey
Examination personnel, according to the testing result of detector 142, just can learn transmission line WL0~RWLkThe state of at least one be floating type
State.
In the present embodiment, in detecting period 410A, 420A, 430A, level S of detection line 143143Should be equal to one
Preset level, otherwise, mean that transmission line WL0~RWLkThe state of at least one be quick condition.It addition, during Jian Ce
In 410B, 420B, 430B, level S of detection line 143143Should be not equal to preset level, otherwise, mean that transmission line WL0~
RWLkThe state of at least one be quick condition.
Fig. 5 A is another detection mode of the floating detection module 140 of the present invention.Fig. 5 A similar diagram 3, difference is
Fig. 5 A has an initial period 520A.Initial period 520A is early than resetting period 500.In initial period, line driver 120 is sequentially
Trigger transmission line WL0~RWLk.Therefore, level S on detection line 143143Should be that low level is (such as symbol SNORShown in).
Then, period 500 is being reset, reset signal SRETFor low level, therefore, level S on detection line 143143Will be by
Low level is changed to high levels.As reset signal SRETWhen being changed to high levels by low level, the level of detection line 143 should be protected
Hold in high levels (such as symbol SNORShown in).Therefore, detecting period 510, detector 142 is according to level S of detection line 143143,
Know whether quick condition.But, when level S of detection line 143143And (such as symbol S when being not maintained in high levelsERInstitute
Show), represent and quick condition occurs.
Fig. 5 B is another detection mode of the floating detection module 140 of the present invention.Fig. 5 B similar diagram 5A, is a difference in that
The initial period 520B of Fig. 5 B, driver 120 triggers transmission line WL simultaneously0~RWLk.Operating principle and Fig. 5 A phase due to Fig. 5 B
Seemingly, thus repeat no more.
Fig. 6 is another possible embodiment storing media of the present invention.Fig. 6 similar diagram 1, difference is, the weight of Fig. 6
Put unit 600 and include electric crystal 610 and a latch unit 620.In the present embodiment, electric crystal 610 is a p-type electric crystal, but
And be not used to limit the present invention.In other embodiments, electric crystal 610 can be a N-type electric crystal.As it can be seen, electric crystal 610
Grid receive a reset signal SRET, its source electrode receives an operation voltage VH, and its drain electrode couples detection line 143.
The level of latch unit 620 breech lock detection line 143.In the present embodiment, latch unit 620 include a phase inverter 630 with
And an electric crystal 640.The input of phase inverter 630 and outfan are respectively coupled to drain electrode and the grid of electric crystal 640.Electric crystal
The source electrode of 640 receives operation voltage VH, and its drain electrode couples detection line 143.
Fig. 7 is another possible embodiment storing media of the present invention.Fig. 7 similar diagram 1, difference is detection of floating
Module 700 coupled transmission lines BL0~BLm, in order to judge transmission line BL0~BLmThe state of at least one whether be quick condition.
Owing to the operating principle of Fig. 7 is identical with Fig. 1, therefore repeat no more.In a possible embodiment, available replacement list shown in Fig. 6
The reset cell 710 of unit 600 replacement Fig. 7.In another embodiment, the floating detection module 700 of Fig. 7 can be applied in Fig. 1.
Therefore, store media and will have two floating detection modules, respectively detection vertical transmission lines BL0~BLmAnd horizontal transport line WL0~
WLn、RWL0~RWLkState.
Fig. 8 A is that the one of the floating detection method of the present invention may flow chart.The floating detection method of the present invention can be applicable to
In Fig. 1, the storage media shown in 6 and 7.For convenience of description, below will be as a example by Fig. 1.First, transmission line WL is triggered0~RWLk(step
Rapid S800).The present invention does not limit trigger sequence.In a possible embodiment, can simultaneously or sequentially trigger transmission line WL0~
RWLk.It addition, step S800 is not necessarily.In other embodiments, step S800 can be omitted.
Then, the level (step S810) of detection line 143 is set.In a possible embodiment, an available reset cell
(such as 141), sets the level of detection line 143.Next, it is determined that whether the level of detection line presets level (step equal to one
S820)。
When the level detecting line 143 is not equal to preset level, detector 142 exports one first testing result, represents and passes
Defeated line WL0~RWLkThe state of at least one be a quick condition (step S830).On the contrary, when the level etc. of detection line 143
When default level, detector 142 exports one second testing result, represents transmission line WL0~RWLkState be not a floating type
State (step S840).
Fig. 8 B is another possible flow chart of the floating detection method of the present invention.Fig. 8 B similar diagram 8A, difference is
Omit step S800, and increase step S850 and S860.When the level detecting line 143 is equal to preset level, trigger transmission line
WL0~RWLkIn the first transmission line (step S850), then judge that the level detecting line 143 is whether equal to presetting level (step
S860)。
When the level detecting line 143 is equal to preset level, represent transmission line WL0~RWLkThe state of at least one be one
Quick condition (step S830).When the level detecting line 143 is not equal to preset level, represent transmission line WL0~RWLkIt is not floating
Dynamic state (step S840), therefore, returns to step S810, again sets the level of detection line 143, and again judges detection line
Whether the level of 143 is equal to presetting level (step S820).
When the level detecting line 143 is equal to preset level, triggers next transmission lines (step S850), and judge inspection
Whether the level of survey line 143 is equal to presetting level (step S860).When the level of detection line 143 is not equal to preset level, then return
To step S810, and after step S820, trigger next transmission lines, until all transmission lines were all triggered.
Unless otherwise defined, at this, all vocabulary (comprising technology and scientific terms) all belong in the technical field of the invention
Tool usually intellectual is commonly understood by.Additionally, unless clear expression, vocabulary definition in general dictionary should be interpreted that and it
In the article of correlative technology field, meaning is consistent, and should not be construed as perfect condition or the most formal voice.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention, any affiliated technology
Field has usually intellectual, without departing from the spirit and scope of the present invention, when making a little change and retouching, therefore
Protection scope of the present invention is when being as the criterion depending on the defined person of claim.
Claims (14)
1. storing media, it is characterized in that, described storage media include:
Multiple memory cells, in order to store data；
Multiple transmission lines, couple the plurality of memory cell；
One drives module, through the plurality of transmission line, accesses the plurality of memory cell；
One floating detection module, including:
One reset cell, couples a detection line；
Multiple adapters, every a connector is coupled between a corresponding transmission line and described detection line；And
One detector, according to the level of described detection line, learns that the state of at least one of the plurality of transmission line is in a detection
Period is whether to be a quick condition, and wherein during described detection, described driving module does not trigger the plurality of transmission line.
Storing media the most as claimed in claim 1, it is characterized in that, during one resets, described reset cell sets described inspection
The level of survey line；During one first detects, described detector detects the level of described detection line, when the level of described detection line
When being not equal to preset level, described detector judges that the state of at least one of the plurality of transmission line is as described floating type
State.
Storing media the most as claimed in claim 2, it is characterized in that, the plurality of transmission line includes multiple word-line and multiple
Bit line, the plurality of adapter is to couple the plurality of word-line one to one.
Storing media the most as claimed in claim 3, it is characterized in that, during one second detects, described driving module triggers and is
One first word-line in the plurality of word-line, and the level of the described detector described detection line of detection, when described detection
When the level of line is equal to described default level, described detector judges that the state of described first word-line is as described quick condition.
Store media the most as claimed in claim 3, it is characterized in that, during described replacement before an initial period, described in drive
Dynamic model block sequentially triggers the plurality of word-line.
Store media the most as claimed in claim 3, it is characterized in that, during described replacement before an initial period, described in drive
Dynamic model block triggers the plurality of word-line simultaneously.
Storing media the most as claimed in claim 3, it is characterized in that, described reset cell is for an electric crystal, the reception of its grid
One reset signal, its source electrode receives one first operation voltage, and its drain electrode couples described detection line.
Storing media the most as claimed in claim 3, it is characterized in that, described reset cell includes:
One first electric crystal, its grid receives a reset signal, and its source electrode receives one first operation voltage, and its drain electrode couples described
Detection line；And
One latch unit, in order to detect the level of line described in breech lock.
Storing media the most as claimed in claim 8, it is characterized in that, described latch unit includes:
One second electric crystal, its source electrode receives described first operation voltage, and its drain electrode couples described detection line；And
One phase inverter, its input couples the drain electrode of described second electric crystal, and its outfan couples the grid of described second electric crystal
Pole.
Storing media the most as claimed in claim 7, it is characterized in that, each of the plurality of adapter is an electric crystal, its
Grid couples a corresponding word-line, and it drains and couples described detection line, its source electrode reception one second operation voltage, and described second
Operation voltage is less than described first operation voltage.
11. 1 kinds of floating detection methods, it is adaptable to one store media, it is characterized in that, described storage media include multiple memory cell,
Multiple transmission lines, driving module and a floating detection module, described driving module passes through the plurality of transmission line, accesses institute
Stating multiple memory cell, the plurality of transmission line passes through multiple adapters, is couple to a detection line, described floating detection method bag
Include:
Set the level of described detection line；
During one detects, it is judged that whether the level of described detection line presets level equal to one；
Judge whether the level of described detection line presets level equal to one；And
When the level of described detection line is not equal to described default level, represent the state of at least one of the plurality of transmission line
Being a quick condition, wherein during described inspection, described driving module does not trigger the plurality of transmission line.
12. float detection method as claimed in claim 11, it is characterized in that, described method further includes:
Trigger one first transmission line in the plurality of transmission line；
Judge that whether the level of described detection line is equal to described default level；And
When the level of described detection line is equal to described default level, represent that the state of described first transmission line is described floating type
State.
13. float detection method as claimed in claim 11, it is characterized in that, described method further includes:
Before setting described detection line, sequentially trigger the plurality of transmission line.
14. float detection method as claimed in claim 11, it is characterized in that, described method further includes:
Before setting described detection line, trigger the plurality of transmission line simultaneously.
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| US5748545A (en) * | 1997-04-03 | 1998-05-05 | Aplus Integrated Circuits, Inc. | Memory device with on-chip manufacturing and memory cell defect detection capability |
| CN101304169A (en) * | 2007-05-10 | 2008-11-12 | 三星电子株式会社 | Irregular voltage detection and cutoff circuit using bandgap reference voltage generation circuit |
| CN101859594A (en) * | 2010-07-01 | 2010-10-13 | 秉亮科技（苏州）有限公司 | Self-timing write tracking type static random memory integrated with weak write test function and calibration method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101139133B1 (en) * | 2010-07-09 | 2012-04-30 | 에스케이하이닉스 주식회사 | Semiconductor memory device and operating method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5748545A (en) * | 1997-04-03 | 1998-05-05 | Aplus Integrated Circuits, Inc. | Memory device with on-chip manufacturing and memory cell defect detection capability |
| CN101304169A (en) * | 2007-05-10 | 2008-11-12 | 三星电子株式会社 | Irregular voltage detection and cutoff circuit using bandgap reference voltage generation circuit |
| CN101859594A (en) * | 2010-07-01 | 2010-10-13 | 秉亮科技（苏州）有限公司 | Self-timing write tracking type static random memory integrated with weak write test function and calibration method thereof |
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