CN103840036A - Preparation technology of PID resistance photovoltaic module - Google Patents
Preparation technology of PID resistance photovoltaic module Download PDFInfo
- Publication number
- CN103840036A CN103840036A CN201410126848.9A CN201410126848A CN103840036A CN 103840036 A CN103840036 A CN 103840036A CN 201410126848 A CN201410126848 A CN 201410126848A CN 103840036 A CN103840036 A CN 103840036A
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- CN
- China
- Prior art keywords
- pid
- layer
- eva
- photovoltaic module
- preparation technology
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005516 engineering process Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000002390 adhesive tape Substances 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 239000005341 toughened glass Substances 0.000 claims abstract description 7
- 238000010030 laminating Methods 0.000 claims abstract description 5
- 238000003466 welding Methods 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 2
- 230000035699 permeability Effects 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000008569 process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Disclosed is a preparation technology of a PID resistance photovoltaic component, the method of the preparation technology of the PID resistance photovoltaic component comprises the following steps that firstly selected battery pieces (refractive index of a decreased layer is more than 2.08) according to appearance and electrical property are welded in series through an effective tinned copper strip, a battery string after being welded in series is arranged on tempered glass of a first layer PIDEVA resistance (volume resistivity is higher than the common EVA, content of VA is lower than the common EVA), a second layer PIDEVA resistance is arranged on the welded battery string, a layer of notacoria (permeable rate is lower than 2g/m2d) is arranged on the upper EVA layer and a layering pieces are formed, the layering pieces are laminated together through a laminating technology, and a laminated piece is made, a junction box is arranged on the back face of the laminated piece, single side adhesive tape is arranged on the rim of the junction box, the cathode of the photovoltaic component is connected to the ground when the photovoltaic component is used.
Description
Technical field
The inventive method relates to a kind of process of preparing of anti-light photovoltaic assembly, is specifically related to a kind of preparation technology of photovoltaic module of anti-PID phenomenon.
Background technology
At present, the subassembly product that the conventional preparation method of photovoltaic module produces, anti-PID Performance Ratio is poor, once there is PID phenomenon in photovoltaic generating system, can cause photovoltaic module to occur that obvious power output declines, thereby cause the power of whole photovoltaic matrix to be greatly affected.
Summary of the invention
For above-mentioned prior art, in order to solve the problems such as the anti-PID Performance Ratio of subassembly product that the conventional preparation method of existing photovoltaic module produces is poor, the inventive method provides a kind of preparation technology of anti-PID photovoltaic module, the method is mainly innovated from preparation technology's flow process and material, the anti-PID function admirable of photovoltaic module of producing according to the method, working stability in photovoltaic generating system.
This process of preparing is achieved through the following technical solutions:
A kind of preparation technology of anti-PID photovoltaic module, its method is: first by outward appearance and the well-graded cell piece of electrical property (anti-reflection layer refraction index is greater than 2.08), use the welding of connecting of efficient tin-coated copper strip, then battery strings typesetting good series welding is being spread to the anti-PID EVA(of ground floor specific insulation higher than common EVA, VA content is lower than common EVA) toughened glass on, above the battery strings that remittance is welded, repave the anti-PID EVA of the second layer, (permeability rate d) forms laminates lower than 2g/ ㎡ finally to repave last layer notacoria in the above on this layer of EVA, and then by laminating technology, laminates is laminated together, make laminate, install terminal box at the laminate back side, its periphery is installed one side adhesive tape.Photovoltaic module should adopt minus earth in use.
The inventive method, by optimized production process, screening raw material and the proportioning of optimizing raw material and the improvement of assembly using method, has realized the lifting greatly of the anti-PID performance of photovoltaic module.
Brief description of the drawings
Accompanying drawing 1 is by the cross section structure schematic diagram of the anti-PID photovoltaic module of this process of preparing making.
In figure, 1, toughened glass; 2, the anti-PID EVA of ground floor; 3, tin-coated copper strip; 4, the anti-PID EVA of the second layer; 5, notacoria; 6, terminal box; 7, one side adhesive tape; 8, cell piece.
Embodiment
Below in conjunction with accompanying drawing, the inventive method is further described.
A preparation technology for anti-PID photovoltaic module, it is realized by following processing step:
(1) cell piece 8 is carried out to the sorting of gear, color and refraction index, effectively performance and the presentation quality of Assurance component;
(2) use tin-coated copper strip 3 that well-graded cell piece 8 series weldings are got up by manual welding or automatic string welding machine, can not have the failure weldings such as rosin joint;
(3) anti-ground floor PID EVA 2 is laid on toughened glass 1 between two parties, it is basically identical with glass size;
(4) 6 string battery strings are arranged and completed on the toughened glass 1 of the anti-PID EVA 2 of ground floor;
(5) battery strings is carried out to the connection of whole series circuit with widening tin-coated copper strip.More than it is greater than 10mm from toughened glass 1 edge;
(6) anti-second layer PID EVA 4 and notacoria 5 are laid in the battery strings connecting, lead-out wire is passed to notacoria 5;
(7) with laminating machine by the encapsulation that vacuumizes, heats, pressurizes of this five layer material; The optimization of laminating technology can improve the light transmittance of encapsulating material, improves the conversion efficiency of assembly;
(8) the cooling rear cell panel chamfered edge good to lamination of lamination;
(9) clean battery component with alcohol, alcohol cleans after battery component, and its surface clean is dustless, can improve adhesive tape bonding intensity, increases the service life;
(10) in battery component surrounding from evenly smearing one deck silane coupling agent, the surrounding by one side tape-stripping to battery component with brush in the scope of 10mm in edge.Paste a circle one side adhesive tape in battery component surrounding, can play the protective effect of the anti-environmental aging of good waterproof, and have extraordinary protective effect for transport and the installation of product;
(11) four jiaos of adhesive tape scissors processing, keep smooth;
(12) terminal box is arranged on the notacoria face of assembly, and lead-out wire is pasted on the binding post of terminal box;
(13) place vertically and leave standstill two hours;
(14) when this photovoltaic module use in system, adopt minus earth.
Obviously, above-mentioned execution mode is only preferred embodiments of the present invention, and any simple modifications on this basis all belongs to protection scope of the present invention.
Claims (3)
1. the preparation technology of an anti-PID photovoltaic module, its method is: first by outward appearance and the well-graded cell piece of electrical property (anti-reflection layer refraction index is greater than 2.08), use the welding of connecting of efficient tin-coated copper strip, then battery strings typesetting good series welding is being spread to the anti-PID EVA(of ground floor specific insulation higher than common EVA, VA content is lower than common EVA) toughened glass on, above the battery strings that remittance is welded, repave the anti-PID EVA of the second layer, (permeability rate d) forms laminates lower than 2g/ ㎡ finally to repave last layer notacoria in the above on this layer of EVA, and then by laminating technology, laminates is laminated together, make laminate, install terminal box at the laminate back side, its periphery is installed one side adhesive tape, photovoltaic module should adopt minus earth in use.
2. the preparation technology of a kind of anti-PID photovoltaic module according to claim 1, is characterized in that: described tin-coated copper strip can use conductive tape to replace.
3. the preparation technology of a kind of anti-PID photovoltaic module according to claim 1, is characterized in that: described one side adhesive tape can use aluminium frame to substitute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410126848.9A CN103840036A (en) | 2014-04-01 | 2014-04-01 | Preparation technology of PID resistance photovoltaic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410126848.9A CN103840036A (en) | 2014-04-01 | 2014-04-01 | Preparation technology of PID resistance photovoltaic module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103840036A true CN103840036A (en) | 2014-06-04 |
Family
ID=50803345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410126848.9A Pending CN103840036A (en) | 2014-04-01 | 2014-04-01 | Preparation technology of PID resistance photovoltaic module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103840036A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609574A (en) * | 2015-12-28 | 2016-05-25 | 润峰电力有限公司 | High voltage ultralong anti-PID solar component |
| CN105702764A (en) * | 2014-11-28 | 2016-06-22 | 中电电气(上海)太阳能科技有限公司 | Battery component with anti-PID effect |
| CN112820791A (en) * | 2021-02-04 | 2021-05-18 | 深圳市新旗滨科技有限公司 | Component for resisting PID effect and preparation method and application thereof |
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|---|---|---|---|---|
| JP2011238719A (en) * | 2010-05-10 | 2011-11-24 | Bridgestone Corp | Solar cell-sealing film and solar cell using the same |
| CN102544155A (en) * | 2012-01-06 | 2012-07-04 | 南通美能得太阳能电力科技有限公司 | Solar cell assembly and manufacturing method thereof |
| CN202585476U (en) * | 2012-05-10 | 2012-12-05 | 深圳市可多为太阳能技术有限公司 | Double-glass solar photovoltaic module |
| CN103137730A (en) * | 2013-02-01 | 2013-06-05 | 常州亿晶光电科技有限公司 | Method and structure for avoiding or reducing crystalline silicon photovoltaic assembly potential induction damping |
| CN103146315A (en) * | 2013-03-27 | 2013-06-12 | 温州瑞阳光伏材料有限公司 | High-volume resistivity EVA (Ethylene Vinyl-acetate Copolymer) rubber film and preparation process thereof |
| WO2013084849A1 (en) * | 2011-12-05 | 2013-06-13 | 大日本印刷株式会社 | Solar cell module |
| KR20130130156A (en) * | 2012-02-20 | 2013-12-02 | 에스케이씨 주식회사 | Solar battery module comprising white eva resin layer |
-
2014
- 2014-04-01 CN CN201410126848.9A patent/CN103840036A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011238719A (en) * | 2010-05-10 | 2011-11-24 | Bridgestone Corp | Solar cell-sealing film and solar cell using the same |
| WO2013084849A1 (en) * | 2011-12-05 | 2013-06-13 | 大日本印刷株式会社 | Solar cell module |
| CN102544155A (en) * | 2012-01-06 | 2012-07-04 | 南通美能得太阳能电力科技有限公司 | Solar cell assembly and manufacturing method thereof |
| KR20130130156A (en) * | 2012-02-20 | 2013-12-02 | 에스케이씨 주식회사 | Solar battery module comprising white eva resin layer |
| CN202585476U (en) * | 2012-05-10 | 2012-12-05 | 深圳市可多为太阳能技术有限公司 | Double-glass solar photovoltaic module |
| CN103137730A (en) * | 2013-02-01 | 2013-06-05 | 常州亿晶光电科技有限公司 | Method and structure for avoiding or reducing crystalline silicon photovoltaic assembly potential induction damping |
| CN103146315A (en) * | 2013-03-27 | 2013-06-12 | 温州瑞阳光伏材料有限公司 | High-volume resistivity EVA (Ethylene Vinyl-acetate Copolymer) rubber film and preparation process thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105702764A (en) * | 2014-11-28 | 2016-06-22 | 中电电气(上海)太阳能科技有限公司 | Battery component with anti-PID effect |
| CN105609574A (en) * | 2015-12-28 | 2016-05-25 | 润峰电力有限公司 | High voltage ultralong anti-PID solar component |
| CN112820791A (en) * | 2021-02-04 | 2021-05-18 | 深圳市新旗滨科技有限公司 | Component for resisting PID effect and preparation method and application thereof |
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| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140604 |