CN105609574A - High voltage ultralong anti-PID solar component - Google Patents
High voltage ultralong anti-PID solar component Download PDFInfo
- Publication number
- CN105609574A CN105609574A CN201510995425.5A CN201510995425A CN105609574A CN 105609574 A CN105609574 A CN 105609574A CN 201510995425 A CN201510995425 A CN 201510995425A CN 105609574 A CN105609574 A CN 105609574A
- Authority
- CN
- China
- Prior art keywords
- pid
- high voltage
- ultralong
- reduced
- solar component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052742 iron Inorganic materials 0.000 claims abstract description 4
- 239000005336 safety glass Substances 0.000 claims description 7
- 230000035699 permeability Effects 0.000 claims description 3
- 239000005341 toughened glass Substances 0.000 abstract 3
- 230000007423 decrease Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a high voltage ultralong anti-PID solar component. The high voltage ultralong anti-PID solar component comprises a backing plate, tempered glass and EVA, wherein the permeable rate of the backing plate is lower than 1.5g/m<2>/d; the tempered glass is ultrawhite low-iron tempered glass; and the EVA is anti-PID EVA. According to the high voltage ultralong anti-PID solar component, after the direct-current side input voltage is increased, more components can be connected in each series, the using amount of direct-current cables connected to an inverter is reduced, the amount of combiner box inverters can also be reduced correspondingly, and the cost of a power station is reduced; after the voltage is increased, the output electric quantity is also increased since the line loss is reduced; the influence of PID phenomenon is effectively reduced, and power drop caused by the PID phenomenon is avoided.
Description
Technical field
The present invention relates to the anti-PID solar components of a kind of high voltage overlength.
Background technology
It is all voltage request Design and manufactures based on DC terminal 1000V that domestic photovoltaic owner flows assembly and matching component, and its cost of electricity-generating and generating efficiency are difficult to meet the demand of large-sized photovoltaic power station and large capacity generating equipment. Contrast 1000V, the assembly of the withstand voltage 1500V of being greater than has more significantly advantage. The high-voltage assembly of the withstand voltage 1500V of being greater than means lower photovoltaic system cost, and after DC side input voltage improves, every string can connect more multicompartment, and the direct current cable use amount of receiving inverter reduces, and the quantity of header box inverter also can correspondingly reduce; Meanwhile, after voltage improves, line loss reduces also allows output electric weight increase, and improves withstand voltage but do not have corresponding measure in prior art. In photovoltaic system, once there is PID phenomenon, can cause power output obviously to decline, generated energy reduces. Anti-PID assembly can reduce the power loss causing that declines.
Summary of the invention
The problem existing for solving existing solar components, the invention provides the anti-PID solar components of a kind of high voltage overlength, and this assembly can tolerate and be greater than 1500V high voltage, can test by 600hPID.
For achieving the above object, the technical solution adopted in the present invention is: the anti-PID solar components of a kind of high voltage overlength, comprise backboard, safety glass and EVA, described backboard adopts the backboard of permeability rate lower than 1.5g/m2/d, described safety glass adopts the low iron safety glass of ultrawhite, and described EVA adopts anti-PIDEVA.
Compared with prior art, the invention has the beneficial effects as follows: after DC side input voltage improves, every string can connect more multicompartment, the direct current cable use amount of receiving inverter reduces, and the quantity of header box inverter also can correspondingly reduce, and has reduced the cost in power station; After voltage improves, line loss reduces also allows output electric weight increase; Effectively reduce the impact of PID phenomenon, avoid the power that PID phenomenon causes to decline.
Brief description of the drawings
For the present invention will be further described, enumerate the drawings and specific embodiments below.
Fig. 1 is structural representation of the present invention.
Detailed description of the invention
As shown in Figure 1, low ultrawhite iron safety glass 1, anti-PIDEVA2, the anti-PID cell piece 3 of ozone process, anti-PIDEVA4, backboard 5 are then carried out to lamination according to sequential cascade as shown in the figure; Its dorsulum 5 permeability rates, lower than 1.5g/m2/d, can tolerate the high voltage that is greater than 1500V; Aluminium frame is installed on laminate four limits, at the shady face of backboard, 7 terminal boxes is installed.
Obviously, above-mentioned embodiment is only one of them embodiment of the present invention, and any simple modifications in structure of the present invention or principle all belongs to protection scope of the present invention.
Claims (1)
1. the anti-PID solar components of high voltage overlength, is characterized in that comprising backboard, safety glass and EVA, and described backboard adopts the backboard of permeability rate lower than 1.5g/m2/d, and described safety glass adopts the low iron safety glass of ultrawhite, and described EVA adopts anti-PIDEVA.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510995425.5A CN105609574A (en) | 2015-12-28 | 2015-12-28 | High voltage ultralong anti-PID solar component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510995425.5A CN105609574A (en) | 2015-12-28 | 2015-12-28 | High voltage ultralong anti-PID solar component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105609574A true CN105609574A (en) | 2016-05-25 |
Family
ID=55989341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510995425.5A Pending CN105609574A (en) | 2015-12-28 | 2015-12-28 | High voltage ultralong anti-PID solar component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105609574A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3478524B2 (en) * | 1997-07-22 | 2003-12-15 | フィグラ株式会社 | Double glazing |
| CN102709365A (en) * | 2012-06-12 | 2012-10-03 | 苏州阿特斯阳光电力科技有限公司 | Solar module and preparation method thereof |
| CN103840036A (en) * | 2014-04-01 | 2014-06-04 | 润峰电力有限公司 | Preparation technology of PID resistance photovoltaic module |
| CN105006497A (en) * | 2015-06-30 | 2015-10-28 | 杭州福斯特光伏材料股份有限公司 | High-voltage backboard for crystal silicon element packaging |
| CN205488154U (en) * | 2015-12-28 | 2016-08-17 | 润峰电力有限公司 | Anti PID solar energy component of high voltage overlength |
-
2015
- 2015-12-28 CN CN201510995425.5A patent/CN105609574A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3478524B2 (en) * | 1997-07-22 | 2003-12-15 | フィグラ株式会社 | Double glazing |
| CN102709365A (en) * | 2012-06-12 | 2012-10-03 | 苏州阿特斯阳光电力科技有限公司 | Solar module and preparation method thereof |
| CN103840036A (en) * | 2014-04-01 | 2014-06-04 | 润峰电力有限公司 | Preparation technology of PID resistance photovoltaic module |
| CN105006497A (en) * | 2015-06-30 | 2015-10-28 | 杭州福斯特光伏材料股份有限公司 | High-voltage backboard for crystal silicon element packaging |
| CN205488154U (en) * | 2015-12-28 | 2016-08-17 | 润峰电力有限公司 | Anti PID solar energy component of high voltage overlength |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160525 |