CN103838923B - A kind of wafer image formula generation method of wafer acceptance test - Google Patents
A kind of wafer image formula generation method of wafer acceptance test Download PDFInfo
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- CN103838923B CN103838923B CN201410060626.1A CN201410060626A CN103838923B CN 103838923 B CN103838923 B CN 103838923B CN 201410060626 A CN201410060626 A CN 201410060626A CN 103838923 B CN103838923 B CN 103838923B
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Abstract
The invention discloses a kind of wafer image formula generation method of wafer acceptance test, comprise the steps：For a product, goods batch, a probe card, set up to should product different metal layer wafer image formula；The wafer image formula of each metal level is analyzed, obtains common item and the different item of each metal level wafer image formula；The common item of the wafer image formula of each metal level is merged, form the final wafer image formula of this product, the final wafer image formula of this product includes one group of common item and the different item of each metal level wafer image formula, The present invention reduces the quantity of wafer image formula, it is easy to retrieve and manage, simultaneously suffer when need to change common item, the respective item of a wafer image formula of merging only need to be changed, do not need to change the wafer image formula of all metal levels, alleviate the workload of modification, also reduce the leakage that multiple modifications cause change and the mistake such as correct mistakes risk.
Description
Technical field
The present invention relates to micro-electronic manufacturing and semiconductor test field, more particularly to a kind of crystalline substance of wafer acceptance test
Circle image formula generation method.
Background technology
At present, in WAT（Wafer acceptance test）In, for a product (light shield), a goods batch
（flow）, a probe Card Type, set up the wafer image formula of corresponding different metal layer.
For example：A product, goods batch is 01, the wafer image journey set up using probe card F1, its corresponding different metal layer
Formula is as shown in table 1 below：
Table 1
| Metal level | Wafer image formula |
| M1 | A01F1-M1 |
| M2 | A01F1-M2 |
| M3 | A01F1-M3 |
| …… | …… |
| Final | A01F1-FINAL |
Multiple wafer image formulas for the different metal layer of above identical product A（A01F1-M1, A01F1-M2,
A01F1-M3 ... ..., A01F1-FINAL）, common item and different item such as table 2 below that its content comprises：
Table 2
However, at present in WAT（Wafer acceptance test）In, for product A, goods batch 01, probe card F1, Suo Youjin
The wafer image formula belonging to layer sets up structure such as table 3 below：
Table 3
It can be seen that, in the prior art, wafer image set up respectively by the wafer image for the different metal layer of identical product
Formula, is so both inconvenient to manage, and when run into need to change common item when in addition it is also necessary to change all metal levels wafer shadow
As formula, waste time and energy, easily malfunction.
Content of the invention
For overcoming the shortcomings of above-mentioned prior art presence, the purpose of the present invention is to provide a kind of wafer acceptance test
Wafer image formula generation method, it passes through will not during the wafer image formula of the different metal layer setting up identical product
Wafer image formula with metal level is merged into one, decreases the quantity of wafer image formula, is easy to retrieve and manages, simultaneously
Run into when need to change common item, only need to change the respective item of a wafer image formula of merging it is not necessary to modification
The wafer image formula of all metal levels, alleviates the workload of modification, also reduces the leakage that multiple modifications cause and changes and correct mistakes
Risk Deng mistake.
For reaching above and other purpose, the present invention proposes a kind of wafer image formula generation side of wafer acceptance test
Method, comprises the steps：
Step one, for a product, goods batch, a probe card, sets up to should product different metal layer
Wafer image formula；
Step 2, is analyzed to the wafer image formula of each metal level, obtains being total to of each metal level wafer image formula
General term and different item；
Step 3, the common item of the wafer image formula of each metal level is merged, forms the final wafer of this product
Image formula, the final wafer image formula of this product includes one group of common item and the difference of each metal level wafer image formula
?.
Further, this common item include DIE SIZE, Notch direction, Probe card information,
Reference DIE position and origin.
Further, this different item includes the feature pattern image of each metal level.
Compared with prior art, the wafer image formula generation method of a kind of wafer acceptance test of the present invention, by
During the wafer image formula of the different metal layer setting up identical product, the wafer image formula of different metal layer is merged into
One, decrease the quantity of wafer image formula, so that wafer image formula is easy to retrieve and manage, simultaneously suffer needs modification altogether
When general term, only need to change the respective item of a wafer image formula of merging it is not necessary to change the crystalline substance of all metal levels
Circle image formula, alleviates the workload of modification, also reduces the leakage that multiple modifications cause and changes and correct mistakes and waits wrong risk.
Brief description
Fig. 1 is a kind of flow chart of steps of the wafer image formula generation method of wafer acceptance test of the present invention.
Specific embodiment
Below by way of specific instantiation and embodiments of the present invention are described with reference to the drawings, those skilled in the art can
Understand further advantage and effect of the present invention by content disclosed in the present specification easily.The present invention also can be by other different
Instantiation implemented or applied, the every details in this specification also can be based on different viewpoints and application, without departing substantially from
Carry out various modification and change under the spirit of the present invention.
Fig. 1 is a kind of flow chart of steps of the wafer image formula generation method of wafer acceptance test of the present invention.As Fig. 1
Shown, a kind of wafer image formula generation method of wafer acceptance test of the present invention, comprise the steps：
Step 101, for a product (light shield), a goods batch（flow）, a probe Card Type, set up
The wafer image formula of corresponding different metal layer.
For example：A product, goods batch is 01, the wafer image journey set up using probe card F1, its corresponding different metal layer
Formula such as table 4 below：
Table 4
| Metal level | Wafer image formula |
| M1 | A01F1-M1 |
| M2 | A01F1-M2 |
| M3 | A01F1-M3 |
| …… | …… |
| Final | A01F1-FINAL |
Step 102, is analyzed to the wafer image formula of each metal level, obtains being total to of each metal level wafer image formula
General term and different item.
For above A01F1-M1, A01F1-M2, A01F1-M3 ... ..., multiple wafer image journeys of A01F1-FINAL
Formula, the common item that its content comprises and different item are as shown in table 5 below：
Table 5
Step 103, the common item of the wafer image formula of each metal level is merged, forms the final wafer of this product
Image formula, the final wafer image formula of this product includes the common item of one group of each metal level wafer image formula and each metal
The different item of layer crystal circle image formula.In present pre-ferred embodiments, the common item of each metal level wafer image formula includes
DIE SIZE（Die size）、Notch（Fluting）Direction, Probe card information（Probe card information）、
Reference DIE position（Nude film reference position）And origin, the different item of each metal level wafer image formula
Feature pattern image for each metal level.
Therefore, for product A, goods batch 01, probe card F1, the wafer image formula structure such as following table of all metal levels
Shown in 6：
Table 6
It can be seen that, a kind of wafer image formula generation method of wafer acceptance test of the present invention is passed through setting up identical product
The wafer image formula process of different metal layer after according to the common item of each metal level wafer image formula by different metal layer
Wafer image formula be merged into one, decrease the quantity of wafer image formula, make wafer image formula be easy to retrieve and manage
Reason, simultaneously suffers when need to change common item, only need to change the respective item of a wafer image formula of merging, be not required to
Change the wafer image formula of all metal levels, alleviate the workload of modification, also reduce the leakage that multiple modifications cause and change
Risk with the mistake such as correct mistakes.
Above-described embodiment only principle of the illustrative present invention and its effect, not for the restriction present invention.Any
Skilled person all can be modified to above-described embodiment and changed without prejudice under the spirit and the scope of the present invention.Therefore,
The scope of the present invention, should be as listed by claims.
Claims (2)
1. a kind of wafer image formula generation method of wafer acceptance test, comprises the steps：
Step one, for a product, goods batch, a probe card, set up to should product different metal layer crystalline substance
Circle image formula；
Step 2, is analyzed to the wafer image formula of each metal level, obtains the common item of each metal level wafer image formula
With different item, this common item includes die size, fluting direction, probe card information, nude film reference position and origin；
Step 3, the common item of the wafer image formula of each metal level is merged, and forms the final wafer image of this product
Formula, the final wafer image formula of this product includes one group of common item and the different item of each metal level wafer image formula.
2. as claimed in claim 1 a kind of wafer acceptance test wafer image formula generation method it is characterised in that：Should
Different item includes the feature pattern image of each metal level.
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| CN103838923B true CN103838923B (en) | 2017-03-08 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102109772A (en) * | 2011-01-28 | 2011-06-29 | 上海宏力半导体制造有限公司 | Method for automatically building interlayer error measurement programs in batch in photoetching process |
| CN103199041A (en) * | 2013-03-14 | 2013-07-10 | 上海华力微电子有限公司 | Management system of wafer acceptable test procedure and application method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5123559B2 (en) * | 2007-05-11 | 2013-01-23 | 株式会社日立製作所 | Semiconductor device and manufacturing method thereof |
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2014
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102109772A (en) * | 2011-01-28 | 2011-06-29 | 上海宏力半导体制造有限公司 | Method for automatically building interlayer error measurement programs in batch in photoetching process |
| CN103199041A (en) * | 2013-03-14 | 2013-07-10 | 上海华力微电子有限公司 | Management system of wafer acceptable test procedure and application method thereof |
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