CN103824817A - Vacuum ceramic packaging structure of sensor - Google Patents
Vacuum ceramic packaging structure of sensor Download PDFInfo
- Publication number
- CN103824817A CN103824817A CN201310712996.4A CN201310712996A CN103824817A CN 103824817 A CN103824817 A CN 103824817A CN 201310712996 A CN201310712996 A CN 201310712996A CN 103824817 A CN103824817 A CN 103824817A
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- China
- Prior art keywords
- getter
- chip
- boss
- shell
- transducer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
The invention relates to a vacuum ceramic packaging structure of a sensor. The vacuum ceramic packaging structure comprises a tube shell, a getter, a chip or a germanium window. The germanium window is fixed to the top of the tube shell, the getter and the chip are disposed in the tube shell; the getter and the chip are fixed to the bottom of the tube shell respectively through a getter boss and a chip boss, and the chip is disposed above the getter. According to the invention, the getter is disposed below the chip so that packaging volume can be greatly reduced, and the device cost is reduced.
Description
Technical field
The present invention relates to infrared light transducer[sensor and other electronic sensor, specifically a kind of vacuum ceramic encapsulating structure of transducer.
Background technology
A lot of electronic devices and transducer need to be worked in vacuum or other low-pressure inert gas.Wherein, the infrared focal plane array of infrared light transducer[sensor need to be worked under vacuum environment.The basic principle of infrared light transducer[sensor is that transducer absorbs the infrared light that target object sends, and device temperature is changed, and the resistance of sensor sensing unit changes along with temperature, finally exports the signal of telecommunication that can detect.
Infrared focal plane array needs a vacuum seal environment, realizes the isolation of heat.At present, the packing forms that infrared focal plane array is conventional has metallic packaging, ceramic packaging etc.Because metallic packaging cost is higher, increasing commercial market starts to adopt ceramic packaging.Cost will play conclusive effect for the growth in infrared focal plane array market.
Infrared focal plane array can reach better level (tens millitorrs are even higher) in encapsulation initial stage vacuum degree, but due to the leak rate of the venting of encapsulating material self and shell encapsulation, component vacuum degree will decline very soon, thereby make device disablement.So just greatly reduce the useful life of device, improved use cost, limited market development.Therefore, can find a kind of component vacuum degree long term maintenance that makes will greatly to reduce the use cost of device in the method for higher level.
In prior art, the method that maintains device vacuum degree is that in the time that component vacuum degree drops to a certain degree, thereby activated degasser makes the vacuum degree of device continue to meet the instructions for use of device at getter of the indoor placement of component vacuum, thereby extend the useful life of device, reduce use cost.
At present, the general and chip of getter is placed in encapsulating package side by side, and this structure has increased the volume of vacuum chamber, and volume and the consumption of encapsulating package and germanium window and other encapsulation consumptive materials are increased, and larger chamber causes larger vacuum maintenance difficulty simultaneously.
Summary of the invention
The present invention is directed to the problems referred to above, a kind of vacuum ceramic encapsulating structure of transducer is provided, this encapsulating structure can reduce encapsulation volume, thereby reduces the cost of device.
According to technical scheme of the present invention: a kind of vacuum ceramic encapsulating structure of transducer, comprise shell, getter, chip and germanium window, described germanium window is fixed on the top of described shell, and described getter and described chip are positioned at described shell; Described getter and described chip are fixed on respectively the bottom of described shell by getter boss and chip boss, and described chip is positioned at the top of described getter.
Described getter boss has two, and the two ends of described getter are separately fixed on described two getter boss.
The two ends of described getter are respectively arranged with positioning step.
Described chip boss has two, and the two ends of described chip are separately fixed on described two chip boss.
Described chip and described getter are overlooked as criss-cross construction.
Described shell is ceramic material, and described getter boss is kovar alloy material, and described chip boss is kovar alloy material.
On described shell, be provided with blast pipe, the outer end of described blast pipe is provided with fluid sealant.
The both sides of described shell are furnished with respectively shell pin, and shell pin is connected with described chip by bonding metal lead wire respectively described in every side.
Technique effect of the present invention is: the present invention is placed on getter the below of chip, can greatly reduce encapsulation volume, thereby reduces the cost of device.
Accompanying drawing explanation
Fig. 1 is structure vertical view of the present invention, has wherein removed germanium window, getter and chip.
Fig. 2 is structure vertical view of the present invention, has wherein removed germanium window.
Fig. 3 is structure vertical view of the present invention.
Fig. 4 is that structure master of the present invention looks cutaway view.
embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.
In Fig. 1～Fig. 3, comprise shell 1, getter boss 2, chip boss 3, getter 4, chip 5, blast pipe 6, shell pin 7, bonding metal lead wire 8, germanium window 9, fluid sealant 10, positioning step 11 etc.
As shown in FIG. 1 to 3, the present invention is a kind of vacuum ceramic encapsulating structure of transducer, comprises shell 1, getter 4, chip 5 and germanium window 9.Shell 1 is ceramic material, is provided with blast pipe 6 on shell 1, and the outer end of blast pipe 6 is provided with fluid sealant 10.
Germanium window 9 is fixed on the top of shell 1, and germanium window 9 adopts the mode of Reflow Soldering to weld, and the selection of scolder can be chosen as required.
Getter 4 and chip 5 are positioned at shell 1.Getter 4 and chip 5 are fixed on respectively the bottom of shell 1 by getter boss 2 and chip boss 3, and chip 5 is positioned at the top of getter 4.Chip 5 is overlooked as criss-cross construction with getter 4.
Getter boss 2 has two, and the two ends of getter 4 are separately fixed on two getter boss 2.Getter boss 2 is kovar alloy material, and the two ends of getter 4 are respectively arranged with positioning step 11.
The both sides of shell 1 are furnished with respectively shell pin 7, and every side shell pin 7 is connected with chip 5 by bonding metal lead wire 8 respectively.
Fabrication processing of the present invention is described below:
1. getter 4 is installed
As shown in Figure 1, first carry out the welding of getter boss 2 and chip boss 3.The material of boss adopts kovar alloy, and welding procedure can be selected as required, such as carrying out soldering or sintering process.Getter boss 2 and chip boss 3 will have certain difference in height, to can hold the installation of getter 4 and chip 5.
Then carry out the installation of getter 4, getter 4 is welded to getter boss 2.The welding procedure of getter adopts spot-welding technology, as shown in Figure 3.
2. chip 5 is installed
The paster technique of chip 5 selects silver slurry to paste.After paster, at 150 ℃, carry out solidifying for two hours.
After getter 4 and chip 5 installations, 8 bondings that go between respectively, as shown in Figure 2.
3. germanium window 9 welds
The welding of germanium window 9, adopts the mode of Reflow Soldering to weld, and the selection of scolder can be chosen as required.
4. leak detection
After 9 installations of germanium window, device is hunted leak with leak detector.Can not reach set index if leak rate detects, mean that germanium window welding procedure fails to reach requirement, device is scrapped processing.
5. exhaust
After device leak detection is passed through, upper exhaust station carries out exhaust.Exhaust air technique temperature was at 150 ℃, 48 hours.After exhaust completes, block blast pipe 6 and carry out blanking.Blast pipe 6 blocks and adopts pincers envelope technique to seal.
The present invention is placed on getter 4 below of chip 5, can greatly reduce encapsulation volume, thereby reduces the cost of device.
Claims (8)
1. the vacuum ceramic encapsulating structure of a transducer, comprise shell (1), getter (4), chip (5) and germanium window (9), described germanium window (9) is fixed on the top of described shell (1), and described getter (4) and described chip (5) are positioned at described shell (1); It is characterized in that: described getter (4) and described chip (5) are fixed on respectively the bottom of described shell (1) by getter boss (2) and chip boss (3), and described chip (5) is positioned at the top of described getter (4).
2. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 1, it is characterized in that: described getter boss (2) has two, the two ends of described getter (4) are separately fixed on described two getter boss (2).
3. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 2, it is characterized in that: the two ends of described getter (4) are respectively arranged with positioning step (11).
4. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 1, it is characterized in that: described chip boss (3) has two, the two ends of described chip (5) are separately fixed on described two chip boss (3).
5. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 1, it is characterized in that: described chip (5) is overlooked as criss-cross construction with described getter (4).
6. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 1, it is characterized in that: described shell (1) is ceramic material, described getter boss (2) is kovar alloy material, and described chip boss (3) is kovar alloy material.
7. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 1, it is characterized in that: on described shell (1), be provided with blast pipe (6), the outer end of described blast pipe (6) is provided with fluid sealant (10).
8. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 1, it is characterized in that: the both sides of described shell (1) are furnished with respectively shell pin (7), shell pin (7) is connected with described chip (5) by bonding metal lead wire (8) respectively described in every side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310712996.4A CN103824817A (en) | 2013-12-19 | 2013-12-19 | Vacuum ceramic packaging structure of sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310712996.4A CN103824817A (en) | 2013-12-19 | 2013-12-19 | Vacuum ceramic packaging structure of sensor |
Publications (1)
| Publication Number | Publication Date |
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| CN103824817A true CN103824817A (en) | 2014-05-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310712996.4A Pending CN103824817A (en) | 2013-12-19 | 2013-12-19 | Vacuum ceramic packaging structure of sensor |
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| CN (1) | CN103824817A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934380A (en) * | 2015-05-11 | 2015-09-23 | 清华大学 | Chip packaging structure |
| CN105651406A (en) * | 2016-02-23 | 2016-06-08 | 西安交通大学 | Encapsulation structure of tungsten-rhenium film thermocouple sensor chip and production method thereof |
| CN105731356A (en) * | 2016-04-29 | 2016-07-06 | 合肥芯福传感器技术有限公司 | Integrated temperature measurement type ceramic packaging tube shell |
| CN105731355A (en) * | 2016-04-29 | 2016-07-06 | 合肥芯福传感器技术有限公司 | Integrated multifunctional ceramic packaging tube shell |
| CN105731357A (en) * | 2016-04-29 | 2016-07-06 | 合肥芯福传感器技术有限公司 | Integrated air-suction type ceramic packaging tube shell |
| CN105758531A (en) * | 2015-12-01 | 2016-07-13 | 中国科学院上海技术物理研究所 | Vacuum packaging assembly for non-refrigeration infrared detector |
| CN107246889A (en) * | 2017-06-22 | 2017-10-13 | 江苏物联网研究发展中心 | Shell structure and infrared sensor encapsulating structure for non-refrigerating infrared sensor Vacuum Package |
| CN112518166A (en) * | 2021-02-10 | 2021-03-19 | 北京中科同志科技股份有限公司 | Packaging method for chip reliability vacuum packaging welding equipment |
| CN114012754A (en) * | 2021-11-23 | 2022-02-08 | 安徽蓝格利通新材应用股份有限公司 | VIP board and intelligent material loading robot is used in production thereof |
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| US7045885B1 (en) * | 2004-12-09 | 2006-05-16 | Hewlett-Packard Development Company, L.P. | Placement of absorbing material in a semiconductor device |
| US20090109515A1 (en) * | 2007-10-30 | 2009-04-30 | Spatial Photonics, Inc. | Encapsulated spatial light modulator having large active area |
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| CN203674191U (en) * | 2013-12-19 | 2014-06-25 | 无锡微奇科技有限公司 | Vacuum ceramic packaging structure for sensor |
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2013
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Patent Citations (6)
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| US7045885B1 (en) * | 2004-12-09 | 2006-05-16 | Hewlett-Packard Development Company, L.P. | Placement of absorbing material in a semiconductor device |
| US20090109515A1 (en) * | 2007-10-30 | 2009-04-30 | Spatial Photonics, Inc. | Encapsulated spatial light modulator having large active area |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934380A (en) * | 2015-05-11 | 2015-09-23 | 清华大学 | Chip packaging structure |
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| CN105758531A (en) * | 2015-12-01 | 2016-07-13 | 中国科学院上海技术物理研究所 | Vacuum packaging assembly for non-refrigeration infrared detector |
| CN105651406A (en) * | 2016-02-23 | 2016-06-08 | 西安交通大学 | Encapsulation structure of tungsten-rhenium film thermocouple sensor chip and production method thereof |
| CN105651406B (en) * | 2016-02-23 | 2019-04-12 | 西安交通大学 | A kind of encapsulating structure and preparation method thereof of W-Re film thermocouple sensing chip |
| CN105731355A (en) * | 2016-04-29 | 2016-07-06 | 合肥芯福传感器技术有限公司 | Integrated multifunctional ceramic packaging tube shell |
| CN105731355B (en) * | 2016-04-29 | 2017-05-31 | 合肥芯福传感器技术有限公司 | Integrated multi-functional ceramic package shell |
| CN105731357A (en) * | 2016-04-29 | 2016-07-06 | 合肥芯福传感器技术有限公司 | Integrated air-suction type ceramic packaging tube shell |
| CN105731356A (en) * | 2016-04-29 | 2016-07-06 | 合肥芯福传感器技术有限公司 | Integrated temperature measurement type ceramic packaging tube shell |
| CN107246889A (en) * | 2017-06-22 | 2017-10-13 | 江苏物联网研究发展中心 | Shell structure and infrared sensor encapsulating structure for non-refrigerating infrared sensor Vacuum Package |
| CN112518166A (en) * | 2021-02-10 | 2021-03-19 | 北京中科同志科技股份有限公司 | Packaging method for chip reliability vacuum packaging welding equipment |
| WO2022170764A1 (en) * | 2021-02-10 | 2022-08-18 | 北京中科同志科技股份有限公司 | Packaging method for vacuum packaging and soldering device for chip reliability |
| CN114012754A (en) * | 2021-11-23 | 2022-02-08 | 安徽蓝格利通新材应用股份有限公司 | VIP board and intelligent material loading robot is used in production thereof |
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Application publication date: 20140528 |