CN103813610B - Inductance coupling plasma processing device and control method thereof - Google Patents
Inductance coupling plasma processing device and control method thereof Download PDFInfo
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- CN103813610B CN103813610B CN201310325922.5A CN201310325922A CN103813610B CN 103813610 B CN103813610 B CN 103813610B CN 201310325922 A CN201310325922 A CN 201310325922A CN 103813610 B CN103813610 B CN 103813610B
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- variable condenser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32926—Software, data control or modelling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
Abstract
The inductance coupling plasma processing device that the present invention relates to, possesses: chamber；Source coil, outside the dielectric window on the top being located at described chamber；Variable condenser controls device, it include being connected with described source coil and for controlling the variable condenser of impedance, the motor making described variable condenser automatically rotate and for detecting the external encoder of the rotation of described motor；Control portion, by comparing the external encoder output valve and the motor action input value of input to described motor exported from described external encoder, judges the remarkable action of described variable condenser.The inductance coupling plasma processing device that the present invention relates to and control method thereof, critically controlled by motor to be connected to each source coil and for regulating the action of the variable condenser of impedance, multiple source coils can be carried out effectively impedance control, and multiple variable condensers critically can be automatically controlled.
Description
Technical field
The present invention relates to inductance coupling plasma processing device and control method thereof, more specifically, energy
Enough inductance coupling plasma processing device and control methods thereof automatically carrying out impedance control.
Background technology
Inductance coupling plasma processing device is for losing in quasiconductor and display fabrication process
Carving technology or the device of depositing operation.For being etched the inductance coupling plasma processing device of technique,
Compared with reactive ion etching device or capacitance coupling plasma Etaching device, its etch effect is very
Good.
But, inductance coupling plasma processing device is difficult to be etched large-area substrates.Generally,
Antenna is located at the vacuum chamber top of inductance coupling plasma processing device.In order to effectively to greatly
Area glass substrate is etched, and the configuration of antenna and the control of impedance are very important technology essential factors.
Additionally, the most effectively configure antenna, the antenna structure that length is longer due to complexity, no
Can effectively carry out impedance control.Further, in order to large-area substrates is etched, need by region
It is respectively provided with antenna.
Additionally, in order to process greater area of substrate, need to be arranged in these helical antennas multiple each other
Zones of different and use, but the structure of this antenna and for processing the impedance control of large-area substrates,
There is bigger difficulty.
Citation
Patent documentation
Korean Patent Laid-Open number: No. 10-2010-0053253, " inductively coupled plasma antenna ".
Summary of the invention
It is an object of the invention to, it is provided that a kind of make variable condenser action by motor it is thus possible to while
Accurately control the inductance coupling plasma processing device of multiple variable condenser.
The inductance coupling plasma processing device of the present invention, it possesses: chamber；Source coil, is located at institute
State outside the dielectric window on chamber top；Variable condenser control device, comprising: with described source coil
Connect and for control the variable condenser of impedance, the motor making described variable condenser automatically rotate and
For detecting the external encoder of the rotation of described motor；Control portion, by comparing from described external encode
The external encoder output valve of device output and the motor action input value of input to described motor, judge institute
State the remarkable action of variable condenser.
The action reference value of described variable condenser is had, when described control portion is detected in the storage of described control portion
During to described variable condenser generation remarkable action, described motor is driven to be set as by described variable condenser
Described action reference value.Described remarkable action can be the step-out of described motor.
In the upside of described dielectric window, there is multiple region, institute can be respectively equipped with in the plurality of region
State source coil.
Described source coil can have multiple, is respectively provided with described variable capacitance on the plurality of source coil
Device control device, and have for control described variable condenser control device from controller, described
It is connected with master computer by network from controller.
Connect on described master computer and have input and output portion, described input and output portion can show input
The setting value input unit of the action setting value of described variable condenser, input the action of described action reference value
Reference value input unit, described action setting value, described action reference value, described motor action input value and
Described external encoder output valve.
Control to be provided with on device capacitance for detecting described variable condenser at described variable condenser
Electric capacity quantity detection sensor, described output unit can show and detected by described electric capacity quantity detection sensor
The capacitance of described variable condenser.Described action reference value can be the minimum electricity of described variable condenser
Capacity.
The control method of the inductance coupling plasma processing device that the present invention relates to, this inductive etc. from
Daughter processing means possesses: source coil, is located at outside the dielectric window on described chamber top；Variable capacitance
Device controls device, comprising: be connected with described source coil and be used for controlling the variable condenser of impedance, making
Motor that described variable condenser rotates automatically and for detecting the external encode of the rotation of described motor
Device；Control portion, controls the action of device for controlling described variable condenser, and described method is by comparing
The external encoder output valve exported from described external encoder is defeated with the motor action inputted to described motor
Enter value, judge the remarkable action of described variable condenser.Described remarkable action can be described motor
Step-out.
When described control portion detects generation remarkable action, described motor can be driven with by described variable
Capacitor is set to described action reference value.
Described action reference value can be the minimum capacity of described variable condenser.
In the upside of described dielectric window, there is multiple region, institute can be respectively equipped with in the plurality of region
Stating source coil, described variable condenser controls device and is respectively provided on described source coil, with to each source coil
Carry out impedance control.
Have can control simultaneously multiple described variable condenser control device from controller, described from control
Device processed is connected with master computer by network, and will control, from described variable condenser, the data that device transmits
Send described master computer to, and described master computer can transmit for same time control from controller to described
Make multiple variable condenser and control the signal of device.
Be connected with described master computer multiple described can be connected by network from controller.
The inductance coupling plasma processing device that the present invention relates to and control method thereof, accurate by motor
Ground controls to be connected to each source coil for regulating the action of the variable condenser of impedance, in order to multiple sources line
Circle carries out impedance control effectively, and multiple variable condensers can be carried out precision and automatically control.
Accompanying drawing explanation
Fig. 1 is the figure of the inductance coupling plasma processing device illustrating that embodiments of the invention relate to.
Fig. 2 is the source coil of the inductance coupling plasma processing device illustrating that embodiments of the invention relate to
The axonometric chart of structure.
Fig. 3 is to illustrate to be arranged on the inductance coupling plasma processing device that embodiments of the invention relate to
The variable condenser in one region controls the state diagram of device.
Fig. 4 be inductance coupling plasma processing device that embodiments of the invention relate to is shown can power transformation
Container controls the figure of device.
Fig. 5 is to illustrate for controlling the inductance coupling plasma processing device that embodiments of the invention relate to
The figure of network configuration of variable condenser.
Fig. 6 is the side illustrating and controlling the inductance coupling plasma processing device that embodiments of the invention relate to
The flow chart of method.
Reference:
20: source coil
100: variable condenser controls device
110: motor
120: external encoder
140: variable condenser
Detailed description of the invention
Below, the embodiment of the inductance coupling plasma processing device that the present invention relates to it is described with reference to.
But, the present invention is not limited to embodiment disclosed below, may be realized in various forms, and says below
Bright embodiment is only used for fully disclosing the present invention, in order to those skilled in the art is fully understood by invention
Protection domain.
Fig. 1 is the figure of the inductance coupling plasma processing device illustrating that embodiments of the invention relate to.As
Shown in Fig. 1, the inductance coupling plasma processing device that the present invention relates to possesses chamber 10, this chamber 10
Possess gate 14, and be formed and make inside state space, to be evacuated required steam vent 11.At chamber
10 inside have the workbench 12 for placing substrate (wafer or various sizes of transparency carrier).In work
The top of station 12 is provided with the electrostatic chuck 13 for clamping substrate.
It is provided with dielectric window 15 on the top of chamber 10.It is provided with as RF on the top of dielectric window 15
The source coil 20 of antenna.Source coil 20 is located at the source coil setting unit 16 being divided into separate space.And
And, on the top of source coil setting unit 16, there is electric component portion 17, be provided with in this electric component portion 17
Controller for electric consumption such as RF power supply etc..
Fig. 2 is the source coil of the inductance coupling plasma processing device illustrating that embodiments of the invention relate to
The axonometric chart of structure.
As in figure 2 it is shown, the source coil setting unit of the inductance coupling plasma processing device that the present invention relates to
16 form nine cut zone A1～the A9 being respectively equipped with source coil 20.Wherein, it is positioned at corner portion
Source coil 20 in four region A1～A4 is connected with the first high frequency electric source 30.Additionally, be positioned at remaining five
The source coil 20 of individual region A5～A9 is connected with the second high frequency electric source 31.First high frequency electric source 30 and
Two high frequency electric sources 31 send 13.56MHz high frequency respectively.
And, be located at the source coil 20 of each region A1～A9 be branched off into four, the four of i.e. first to fourth
Individual source coil 21,22,23,24 also winds to same direction.Additionally, each source coil 21,22,23,
The end of 24 is provided with variable condenser and controls device 100.
Fig. 3 is to illustrate to be arranged on the inductance coupling plasma processing device that embodiments of the invention relate to
The variable condenser in one region controls the state diagram of device.
As it is shown on figure 3, variable condenser control device 100 be arranged on arrange in each region source coil 21,
22, the end of 23,24.Variable condenser control device 100 can also be arranged on source coil 21,22,
23, the mid portion of 24.It is fixedly mounted on for dividing additionally, this variable condenser controls device 100
On the next door 16a of each region A1～A9.
Fig. 4 be inductance coupling plasma processing device that embodiments of the invention relate to is shown can power transformation
Container controls the figure of device.
As shown in Figure 4, variable condenser control device 100 includes: motor 110；External encoder 120,
It is arranged in the rotary shaft that motor 110 extends；Insulating flange 130, through external encoder 120 and prolong
Stretch；Variable condenser (VVC, Vacuum Variable Capacitor) 140, self-insulating flange 130 prolongs
Stretch, and drive shaft is connected with insulating flange 130；Cooling end 150, is located at the end of variable condenser 140.
Motor 110 uses motor 110.External encoder 120 includes: circular discs 121, is provided with edge
Circumference amounts to 50 detection hole 121a with formed every 7.2 degree；Detection sensor 122, in circular discs
The upper and lower, periphery of 121 is respectively equipped with illuminating part and light accepting part, so as to detect this circular discs 121
Detection hole 121a.And, variable condenser 140 has Z-scanning sensor (not shown) simultaneously.
Variable condenser configured as described above controls device 100, is separately positioned on as illustrated in fig. 3 and is positioned at
On each source coil 21,22,23,24 in one region.Therefore, join for large-area processing substrate
When putting antenna, it is possible to use dozens of variable condenser controls device 100.Make in an embodiment of the present invention
Device 100 is controlled with altogether 36 variable condensers.
All variable condensers control device 100 to control impedance and action, in order to individually controlling can
Variodenser 140 is to keep uniform plasma.To this end, each variable condenser 140 needs to control individually
System, and it is controlled so as to relevant action effective coordination to each other, to the most manually be regulated these by user
Variable condenser 140 regulates impedance, and efficiency is the lowest.
Therefore, in the present invention, controlled by network struction in inductance coupling plasma processing device
The facility network (Devicenet) 200 of variable condenser, so as to simultaneously automatically control all variable capacitances
Device 140.
Fig. 5 is to illustrate for controlling the inductance coupling plasma processing device that embodiments of the invention relate to
The figure of network configuration of variable condenser.
It is connected to as it is shown in figure 5, first to fourth variable condenser being positioned at each region controls device 100
First controls device 100 from controller (slave controller) 211, the n-th-3 to n-th variable condenser
It is connected to M from controller 212.Here, M and n is natural number.
Therefore, the variable condenser that embodiments of the invention relate to controls device 100 can be according to source coil
The quantity of 20 arranges a large amount of variable condenser and controls device 100, network can be extended to control this variable
Scope needed for capacitor control device 100.
On the other hand, guarantee that communication line is for by external encoder 120 and Z-from controller 211,212
Detected value detected by scanning sensor sends master computer 220 to.And, respectively from controller 211,
212 can possess the step motor control portion for controlling each motor 100 and field programmable gate array
(FPGA, Field Programmable Gate Array), and possess and be connected with FPGA and by setting
The ARM(Advanced RISC Machines that standby net 200 is connected with master computer 220) processor.
Additionally, display can be connected on master computer 220, this display is combined with as input
The touch pad of output unit 230.Input unit in input and output portion 230 has input to variable condenser 140
The setting value input unit of action setting value and the action reference value input unit of input action reference value, defeated
Go out portion's display action setting value, action reference value, motor action input value and external encoder output valve.
Here, action setting value is the electricity of the variable condenser 140 being set by the user to control impedance
The value of capacity, action reference value (or negative sense ultimate value, "-limit ") can be this variable condenser 140
Minimum capacity value.The reason setting this action reference value is owing to all variable condensers 140 are actual
There is the error (Tolerance) of about 10%.
That is, the minimum capacity (capacitance) of all variable condensers 140 is not " 0pF ", has
The different minimum capacity values such as several～tens pF.Thus, be located on multiple source coil 20 is all
The minimum capacity value of variable condenser 140 is the most different.Therefore, these variable condensers 140 are detected
After minimum capacity value, this minimum capacity value is set as action reference value and can as being used for operation
The action benchmark of variodenser 140.
Below, illustrate at the inductively coupled plasma that embodiments of the invention configured as described above relate to
The control method of reason device.
Move into substrate to chamber 10 inside and be placed on electrostatic chuck 13.Then, internal to chamber 10
Supply response gas, and chamber 10 inside remains preset pressure by exhaust apparatus.Afterwards, open
High frequency electric source is with the output of regulation RF power for generating the high frequency of plasma, and this RF power is provided to
Source coil 20.Thus, the magnetic line of force from source coil 20 runs through dielectric window 15 and in chamber 10
The process space in portion, thus produce induction field.Reacting gas is split into molecule by this induction field
Or atom colliding, thus produce plasma.This plasma exists with atomic group or ionic species
To processing greatly spatial diffusion inside state space.Now, atomic group is incident to side's property ground such as substrates, ion
Moved to substrate by direct current biasing, thus be etched substrate waiting process.
On the other hand, in order to effectively process such as plasma-treating technology, plasma density needs all
Even.In order to make plasma density uniform, need to regulate the impedance of source coil 20.Therefore, it can utilize
The variable condenser being located on each source coil 20 controls device to regulate the impedance of each source coil 20.
Such as, as in figure 2 it is shown, source coil 20 by scattering device when altogether nine region A1～A9,
Flowing through identical high frequency electric even if being located on the source coil 20 in all regions, plasma can not be guaranteed
Density or the uniformity of processing substrate.
That is, according to process environments, need each source coil 20 being located at nine region A1～A9 is carried out
Intrinsic impedance regulates.Therefore, in order to ensure the impedance of applicable each region A1～A9, variable condenser is utilized
Control device 100 and carry out the regulation of the impedance to each source coil 20.
On the other hand, in an embodiment of the present invention, to the regulation action of variable condenser 140 by stepping
Motor 110 performs.But, because unforeseen reason, motor 110 is it may happen that step-out
The situation of (step out).If there is step-out in motor 110, even if in order to drive variable condenser 140
And to the input value of motor 110 input regulation, motor 110 is actual will not be according to this input value
Carry out action.In this condition, it is impossible to control impedance, so the uniformity of plasma can not be regulated,
Effective processing substrate can not be realized.
In order to solve these problems, the value inputted for drive stepping motor 110 represents with pulse value, electricity
The actual act of machine 110 is detected by external encoder 120, and by the real output value of motor 110 with
Pulse value represents.It addition, by the pulse value inputted for drive stepping motor 110 with by external encode
The output valve of device 120 detection output compares, if display the two value is unequal, it can be determined that for
There occurs step-out.
Fig. 6 is the side illustrating and controlling the inductance coupling plasma processing device that embodiments of the invention relate to
The flow chart of method.
As shown in Figure 6, reference value (or the minimum capacity of the variable condenser 140 of setting is first confirmd that
Value) (S100).Although the reference value of each variable condenser 140 arranged is different, if but the most true
Recognize and arrange afterwards, then unless changed variable condenser 140, this value is constant.
Afterwards, this reference value is inputted (S110) as action reference value to master computer 220.To all
Variable condenser 140 carries out identical above-mentioned action, and confirms the action base of all variable condensers 140
The backward master computer 220 of quasi-value inputs.
After input action reference value, carry out the action of inductance coupling plasma processing device.According to etc.
The generation state of gas ions, carries out the setting of initial inductance coupling plasma processing device, now,
Carry out the regulation of the capacitance of variable condenser 140.
In order to regulate the capacitance of variable condenser 140, drive motor 110.Input is used for making motor 110
The input value of action i.e. input current value, then motor 110 carries out the step corresponding with this input current value
(S120) is made in precession.
Then, according to the stepwise operation of motor 110, external encoder 120 detects this action and gives birth to
Become the output current value (S130) as output valve.Then, detection input current value and output current value are also
Relatively these two values (S150).If input current value is identical with output current value, then mean motor
110 rotate to the required anglec of rotation.Thus, it is possible to judge that variable condenser 140 action is to required state.
In contrast, if input current value and output current value differ, then may determine that as motor
110 there occurs step-out.Now, generate step-out rub-out signal (S160), enter to eliminate this error condition
The start of line drives (S170).
Initial driving makes variable condenser 140 with above-mentioned action reference value action.By initial drive command,
Motor 110 makes the capacitance of variable condenser 140 recover to action reference value.If variable condenser
140 reach action reference value, then stop the action of motor 110 so that variable condenser 140 is in
The SBR of regulation impedance.Afterwards, institute can again be regulated by the action of motor 110
Need impedance.
As it has been described above, embodiments of the invention, the technology for limiting the present invention that should not be construed as is thought
Think.Protection scope of the present invention is only as the criterion with the record of claims, leads for technology belonging to the present invention
For the those of ordinary skill in territory, the technological thought of the present invention can be carried out various forms of improvement and change.
Therefore, these improve and change for general technical staff of the technical field of the invention be aobvious and
It is clear to, belongs in protection scope of the present invention.
Claims (14)
1. an inductance coupling plasma processing device, it possesses:
Chamber；
Source coil, outside the dielectric window on the top being located at described chamber；
Variable condenser control device, it include being connected with described source coil and for controlling the variable of impedance
Capacitor, make motor that described variable condenser rotates automatically and for detecting the rotation of described motor
External encoder；
Control portion, by compare the external encoder output valve that exports from described external encoder and input to
The motor action input value of described motor, judges the remarkable action of described variable condenser；And
For control described variable condenser control device from controller, described pass through network from controller
It is connected with master computer,
Wherein, described source coil and described variable condenser control device and have multiple, described source coil
Each is connected to described variable condenser and controls each of device so that every for described source coil
One can carry out impedance control.
Inductance coupling plasma processing device the most according to claim 1, it is characterised in that
The action reference value of described variable condenser is had, when described control portion is detected in the storage of described control portion
During to described variable condenser generation remarkable action, drive described motor to be set by described variable condenser
For described action reference value.
Inductance coupling plasma processing device the most according to claim 2, it is characterised in that
Described remarkable action is the step-out of described motor.
Inductance coupling plasma processing device the most according to claim 2, it is characterised in that
In the upside of described dielectric window, there is multiple region, be respectively equipped with described source in the plurality of region
Coil.
Inductance coupling plasma processing device the most according to claim 1, it is characterised in that
Connect on described master computer and have input and output portion,
Described input and output portion includes:
Input the setting value input unit of the action setting value of described variable condenser；
Input the action reference value input unit of described action reference value；And
Show described action setting value, described action reference value, described motor action input value and described
The output unit of external encoder output valve.
Inductance coupling plasma processing device the most according to claim 5, it is characterised in that
Control to be provided with on device capacitance for detecting described variable condenser at described variable condenser
Electric capacity quantity detection sensor, described output unit shows described in described electric capacity quantity detection sensor detects
The capacitance of variable condenser.
Inductance coupling plasma processing device the most according to claim 5, it is characterised in that
Described action reference value is the minimum capacity of described variable condenser.
8. a control method for inductance coupling plasma processing device, at this inductively coupled plasma
Reason device possesses: source coil, is located at outside the dielectric window on chamber top；Variable condenser controls device,
It includes being connected with described source coil and for controlling the variable condenser of impedance, making described variable condenser
Automatically the motor rotated and the external encoder being used for detecting the rotation of described motor；Control portion, is used for
Control described variable condenser and control the action of device,
Described control method is characterised by,
Input with to described motor by comparing the external encoder output valve exported from described external encoder
Motor action input value, judge the remarkable action of described variable condenser；
Described inductance coupling plasma processing device farther includes for controlling described variable condenser control
Device processed from controller, described be connected with master computer by network from controller,
Wherein, described source coil and described variable condenser control device and have multiple, described source coil
Each is connected to described variable condenser and controls each of device so that every for described source coil
One can carry out impedance control.
The control method of inductance coupling plasma processing device the most according to claim 8, it is special
Levy and be,
Described remarkable action is the step-out of described motor.
The control method of inductance coupling plasma processing device the most according to claim 8, its
It is characterised by,
When described control portion detects the described remarkable action of generation, drive described motor with by described variable
Capacitor is set as action reference value.
The control method of 11. inductance coupling plasma processing devices according to claim 10, its
It is characterised by,
Described action reference value is the minimum capacity of described variable condenser.
The control method of 12. inductance coupling plasma processing devices according to claim 11, its
It is characterised by,
In the upside of described dielectric window, there is multiple region, be respectively equipped with described source in the plurality of region
Coil, described variable condenser controls device and is respectively provided on described source coil, to carry out each source coil
Impedance control.
The control method of 13. inductance coupling plasma processing devices according to claim 12, its
It is characterised by,
Described can control multiple described variable condenser from controller simultaneously and control device, with will be from described
Variable condenser controls the data of device transmission and sends described master computer to, and described master computer is to institute
State and control the signal of device from controller transmission for controlling multiple variable condenser simultaneously.
The control method of 14. inductance coupling plasma processing devices according to claim 13, its
It is characterised by,
Be connected with described master computer multiple described is connected by network from controller.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0125867 | 2012-11-08 | ||
| KR1020120125867A KR20140059422A (en) | 2012-11-08 | 2012-11-08 | Inductively coupled plasma processing apparatus and control method thereof |
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| CN103813610A CN103813610A (en) | 2014-05-21 |
| CN103813610B true CN103813610B (en) | 2016-12-28 |
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| CN105789009B (en) * | 2014-12-26 | 2018-05-25 | 北京北方华创微电子装备有限公司 | For the upper cover and plasma etching equipment of plasma etching equipment |
| CN109814006B (en) * | 2018-12-20 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Method and device for detecting abnormal discharge of etching system |
| WO2020214477A1 (en) * | 2019-04-15 | 2020-10-22 | Lam Research Corporation | Early warning systems and methods for determining capacitor failures |
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Also Published As
| Publication number | Publication date |
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| TW201419369A (en) | 2014-05-16 |
| CN103813610A (en) | 2014-05-21 |
| KR20140059422A (en) | 2014-05-16 |
| TWI488214B (en) | 2015-06-11 |
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