CN105789009B - For the upper cover and plasma etching equipment of plasma etching equipment - Google Patents
For the upper cover and plasma etching equipment of plasma etching equipment Download PDFInfo
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- CN105789009B CN105789009B CN201410824996.8A CN201410824996A CN105789009B CN 105789009 B CN105789009 B CN 105789009B CN 201410824996 A CN201410824996 A CN 201410824996A CN 105789009 B CN105789009 B CN 105789009B
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- upper cover
- conductive plate
- venthole
- plasma etching
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Abstract
The present invention provides a kind of upper cover for plasma etching equipment, the upper cover includes conductive housing, wherein, the upper cover further includes demarcation strip, the demarcation strip surrounds cavity with the housing, the demarcation strip includes the medium window portion being connected with each other and conductive plate portion, and the medium window portion is set around the conductive plate portion, and planar coil is arranged in medium window portion and in the cavity.The present invention also provides a kind of plasma etching equipments.When carrying out plasma etching to chip using the plasma etching equipment, the conduction plate portion is opposite with lower plate electrode, therefore, the impedance when radio-frequency power of lower plate electrode is directly transferred in the form of electric field in chamber body can be reduced, improve the efficiency of transmission of radio-frequency power, the electric field strength of wafer surface is enhanced, improves the bombardment effect of ion pair chip.
Description
Technical field
The present invention relates to semiconductor equipment manufacturing fields, and in particular, to a kind of upper cover for plasma etching equipment
With a kind of plasma etching equipment including the upper cover.
Background technology
Graphical sapphire substrate (PSS, Patterned Sapphire Substrate) is that current industry generally uses
A kind of raising Sapphire Substrate on GaN base LED light extraction efficiency method.Its specific method comprises the following steps：
With photoresist or other mask materials make patterned mask layer on a sapphire substrate；With
Sapphire Substrate is etched with the method for wet etching or dry etching, the pattern transfer on mask to sapphire is served as a contrast
On bottom.
When being patterned to sapphire material, can be selected not according to characteristics such as crystal orientation, the hardness of sapphire material
Same lithographic method, so as to obtain different etched features patterns.
At present frequently with a kind of method be dry etching.Dry etching is mainly the process gas using plasmoid
Body performs etching.The bombardment effect of positively charged ion in plasma and the chemical attack effect of Neutral radical are mutual
Promote and strengthen, sapphire is performed etching.Since sapphire hardness is higher, chemical property is compared with torpescence, in etching with just from
Based on the bombardment effect of son, supplemented by the chemical attack of free radical.
Shown in Fig. 1 is a kind of common plasma etching equipment.As shown in the figure, the plasma etching equipment includes
Upper cover 100 and chamber body 200, upper cover 100 are arranged on the open end of chamber body 200.As can be drawn from Figure 1, upper cover 100
Including housing 110, medium window 120.Planar coil 130 is arranged in the cavity limited jointly by housing 110 and medium window 120,
Lower plate electrode 300 is provided in chamber body 200.When carrying out plasma etching, chip is arranged on lower plate electrode 300
On.When loading radio-frequency power on lower plate electrode 300, the electronics and ion in chip sheaths are under the action of alternating electric field power
It moves in a circle, since electron mass is much smaller than ion, the movement velocity of electronics is much larger than ion.Half of rf period
It is interior, before direction of an electric field reversion, the number of electrons of wafer surface is reached much larger than ion populations, wafer surface is caused net electronics occur
Accumulation, forms negative chip automatic bias.The region Nei You directions of the net electron accumulation of wafer surface are perpendicularly oriented to the electric field of chip, should
Region is chip sheaths.The direction current potential for being directed toward chip in chip sheaths along chip normal direction continuously decreases.Similarly, upper planar coil
After loading rf frequency, medium window surface can also form sheath layer structure (that is, medium window sheaths), and medium window surface is made to be negative electricity
Position.Region between medium window sheaths and chip sheaths is plasma slab, and direction of an electric field is directed toward medium window along medium window normal,
Current potential continuously decreases (as shown in Figure 3) in the direction.
Since planar coil is uniformly distributed on medium window, planar coil projects on the wafer causes chip
The deterioration of interior etching homogeneity.
Shown in Fig. 2 is a kind of improved plasma etching equipment, in the plasma etching equipment, planar coil
130 are arranged on the periphery of medium window 120, and with lower plate electrode 300 without facing area, so as to prevent planar coil
130 project the deterioration for causing etching homogeneity in chip on the wafer.But the medium window 120 of planar coil 130 is to lower flat
The field coupling of 300 radio-frequency power of plate electrode is acted on there are stronger electrical impedance, and the field coupling efficiency of radio-frequency power is by significantly
Weaken, chip automatic bias is relatively low, and the bombarding energy deficiency of ion pair chip can not adapt to the sapphire etched sidewall in high rigidity
The demand of straight circular cone pattern figure.
Therefore, when how to reduce plasma etching equipment and performing etching, the electrical impedance in plasma etching equipment becomes this
The technical issues of field is urgently to be resolved hurrily.
The content of the invention
Present invention offer is a kind of to be set for the upper cover of plasma etching equipment and a kind of plasma etching including the upper cover
It is standby.When being performed etching using the plasma etching equipment to chip, the electrical impedance in plasma etching equipment is smaller.
To achieve these goals, as one aspect of the present invention, provide a kind of for plasma etching equipment
Lid, the upper cover include conductive housing, wherein, the upper cover further includes demarcation strip, and the demarcation strip is surrounded with the housing
Cavity, the demarcation strip include the medium window portion being connected with each other and conductive plate portion,
The medium window portion is set around the conductive plate portion；
Planar coil is arranged in medium window portion and in the cavity.
Preferably, air admission hole is provided on the housing, venthole is provided in the conduction plate portion.
Preferably, the upper cover further includes first partition, and one end of the first partition is connected with the housing, the other end
It is connected with the conductive plate portion, and the first partition is set around the conductive plate portion, and the cavity is separated into uniform flow
Chamber and radio-frequency cavity, the conduction plate portion are formed as the bottom wall of the uniform flow chamber, and the air admission hole is connected with the uniform flow chamber, described
Equally distributed multiple ventholes are provided in conductive plate portion.
Preferably, the first partition is made of an electrically conducting material.
Preferably, the distance between the conductive plate portion and roof of the housing be less than or equal to the medium window portion with
The distance between roof of the housing.
Preferably, the conductive plate portion is circular slab, and multiple ventholes are arranged as around the center of circle of the conductive plate portion
Multi-turn.
Preferably, the conductive plate portion is circular slab, and the venthole is divided into multigroup, the equal edge of venthole described in every group
The radial direction of the conduction plate portion is set.
Preferably, the size of the venthole along the conductive plate portion radial direction is more than the venthole along the conductive plate portion
The size of circumferential direction, and multiple ventholes are arranged as multi-turn around the center of circle of the conductive plate portion, in same radial direction
On, adjacent two ventholes are located in non-conterminous circle, and there are one the outlets for the middle part setting of the conduction plate portion
Hole, the center of circle of the conduction plate portion are located in the venthole being arranged in the middle part of the conductive plate portion.
Preferably, the upper cover further includes the second partition made of dielectric material, and the second partition is arranged on described
The edge being connected in medium window portion with the conductive plate portion, and the second partition is tightly connected with the first partition.
As another aspect of the present invention, a kind of plasma etching equipment is provided, which includes flat
Planar coil, the chamber body of one end open, the lower plate electrode being arranged in the chamber body and the covering chamber body
Open end upper cover, wherein, the upper cover is above-mentioned upper cover provided by the present invention, conduction plate portion and the lower tablet
The load-bearing surface of electrode is oppositely arranged, and the conduction plate portion ground connection, the planar coil is arranged in the medium window portion and position
In the cavity.
When carrying out plasma etching to chip using plasma etching equipment provided by the present invention, chip is arranged on
On the load-bearing surface of lower plate electrode.Since the conductive plate portion of upper cover is opposite with lower plate electrode, it is thereby possible to reduce lower tablet
The impedance when radio-frequency power of electrode is directly transferred in the form of electric field in chamber body improves the transmission effect of radio-frequency power
Rate enhances the electric field strength of wafer surface, improves the bombardment effect of ion pair chip.
Description of the drawings
Attached drawing is for providing a further understanding of the present invention, and a part for constitution instruction, with following tool
Body embodiment is together for explaining the present invention, but be not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is a kind of schematic cross-sectional view of plasma etching equipment in the prior art；
Fig. 2 is the schematic cross-sectional view of another plasma etching equipment in the prior art；
Fig. 3 illustrates the current potential situation of each position in the chamber body of Fig. 1 and plasma apparatus shown in Fig. 2；
Fig. 4 is the schematic cross-sectional view of the first embodiment of plasma etching equipment provided by the present invention；
Fig. 5 is the schematic cross-sectional view of second of embodiment of plasma etching equipment provided by the present invention；
Fig. 6 is the schematic cross-sectional view of the third embodiment of plasma etching equipment provided by the present invention；
Shown in Fig. 7 is the current potential feelings of each position in the chamber body of plasma etching equipment provided by the present invention
Condition；
Fig. 8 is the bottom view of upper cover provided by the present invention, illustrates a kind of arrangement mode of venthole；
Fig. 9 illustrates the arrangement mode of venthole in upper cover shown in Fig. 8；
Figure 10 is the bottom view of upper cover provided by the present invention, illustrates another arrangement mode of venthole；
Figure 11 illustrates the arrangement mode of the stomata in the upper cover shown in Figure 10.
Reference sign
100：Upper cover 110：Housing
120：Medium window 130：Planar coil
141：Medium window portion 142：Second partition
143：Conductive plate portion 144：First partition
150：Sealing ring 200：Chamber body
300：Lower plate electrode 110a：Air admission hole
143a：Venthole
Specific embodiment
The specific embodiment of the present invention is described in detail below in conjunction with attached drawing.It should be appreciated that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to limit the invention.
As one aspect of the present invention, as shown in figure 4, a kind of upper cover 100 for plasma etching equipment is provided, it should
Upper cover 100 includes conductive housing 110, wherein, upper cover 100 further includes demarcation strip, and the demarcation strip surrounds sky with housing 110
Chamber, the demarcation strip include the medium window portion 141 being connected with each other and conductive plate portion 143, and medium window portion 141 is around conductive plate portion
143 are set, and planar coil 130 is arranged in medium window portion 141 and in the cavity.
When by upper cover 100 in plasma etching equipment, upper cover 100 is conductive by the closure of openings of chamber body 200
Plate portion 143 is opposite with the loading end of lower plate electrode 300.As its name suggests, conductive plate portion 143 is (for example, gold by conductive material
Belong to) made of, and medium window portion 141 is then made of dielectric material (for example, quartz, ceramic lamp).
Since conductive plate portion 143 is made of an electrically conducting material, and medium window portion 141 is made of dielectric material, therefore, conductive plate
Portion 143 is much smaller than impedance of the medium window portion 141 to radio frequency to the impedance of radio frequency.Therefore, upper cover 100 provided by the present invention with
When in plasma etching equipment, Jie of upper cover 100 of the prior art is much smaller than in the sheaths that the baffle surface is formed
The sheaths that matter window surface is formed, it follows that utilizing the plasma etching equipment for including upper cover provided by the present invention to crystalline substance
When piece performs etching, there is larger effective plasma slab, as shown in Figure 7 in chamber body 200.
In addition, since when in use, the conductive plate portion 143 in upper cover 100 is opposite with lower plate electrode 300, conductive
Plate portion 143 is grounded, and when radio-frequency power is loaded on lower plate electrode 300, portion radio frequency power is directly delivered in the form of electric field
In chamber body 200, the conducting of " lower plate electrode-wafer-to wafer sheaths-plasma-upper cover sheaths-conduction plate portion " is formed
Circuit.With conducting circuit " lower plate electrode-wafer-to wafer sheaths-plasma-medium window sheaths-medium of the prior art
Window " is compared, and the conduction impedance of plasma etching equipment provided by the present invention greatly reduces.Therefore, lower plate electrode 300 is penetrated
The efficiency of transmission that frequency power is directly transferred to by the form of electric field in chamber body 200 also greatly improves, so as to enhance down
The electric field strength of wafer surface on plate electrode 300 improves the automatic bias of wafer surface, and plasma is to the bombardment energy of chip
Amount also corresponding enhancing.
Conductive plate portion 143 can be interconnected with medium window portion 141 in several ways.It is for example, shown in Fig. 4
In the first embodiment, conductive plate portion 143 can be interconnected with medium window portion 141 using binding agent.It is of course also possible to
Conductive plate portion 143 and medium window portion 141 are connected using other connectors, is no longer repeated one by one here.
It will be apparent to a skilled person that when carrying out plasma etching industrial, etching gas should can lead to
Upper cover 100 is crossed to enter in chamber body 200.Hereinafter will be described in detail how to set in upper cover 100 allows etching gas to lead to
The hole crossed.
In the present invention, can be entered for the etching gas of plasma etching by upper cover 100 in chamber body 200,
Therefore, air admission hole 110a can be had by being set on the housing 110 of upper cover 100, and can then be provided with venthole in conductive plate portion 143
143a。
Air admission hole 110a is by the turned on outside of the cavity and upper cover 100, and venthole 143a is also by the cavity and upper cover
100 turned on outside, unlike, air admission hole 110a turns on the cavity with providing the gas source of etching gas, and outlet
Hole 143a then turns on the cavity in upper cover 100 and chamber body 200.By air admission hole 110a etching is provided into the cavity
Gas, and the etching gas in the cavity are entered by venthole 143a in chamber body 200.
When being performed etching using the plasma etching equipment for including upper cover 100 provided by the present invention to chip, first
It needs etching gas being passed through in the cavity of upper cover 100, etching gas is then imported into chamber body 200 through venthole again
It is interior.In order to make the etching gas in chamber body more uniform, it is preferable that can be in the cavity of upper cover 100 to etching
Gas carries out uniform flow.Specifically, as shwon in Figures 5 and 6, upper cover 100 further includes first partition 144, the first partition 144
One end is connected with housing 110, and the other end is connected with conductive plate portion 143, and first partition 144 is set around conductive plate portion 143, with
The cavity is separated into uniform flow chamber and radio-frequency cavity, conductive plate portion 143 is formed as the bottom wall of the uniform flow chamber, air admission hole 110a with
The uniform flow chamber connects, and equally distributed multiple venthole 143a are provided in conductive plate portion 143.
The uniform flow chamber realizes the homogenization of etching gas by the process homogenized twice：The first step, etching gas lead to
Air admission hole 110a is crossed into after the uniform flow chamber, full of the uniform flow chamber, this is homogenizes for the first time；Etching full of uniform flow chamber
The equally distributed multiple venthole 143a of gas are equably expelled in chamber body 200, this is homogenized for second.
As mentioned above it is possible, when performing etching technique, etching gas, can after the homogenization twice of uniform flow chamber
It is more equally distributed in chamber body 200, so as to be conducive to improve the uniformity of etching technics.
Another advantage of first partition 144 is set to be, can prevent from diffusing into the plasma in the uniform flow chamber
Body diffuses to radio-frequency cavity, so as to avoid planar coil 130 by plasma etching, extends the service life of upper cover 100.
When carrying out plasma etching, in order to form " lower plate electrode-wafer-to wafer sheaths-plasma-upper cover sheath
The conducting circuit of layer-conductive plate portion ", conductive plate portion 143 should be ground connection.It in the present invention, can be real in several ways
The ground connection of existing conduction plate portion 143.For example, can be electrically connected conductive plate portion 143 with the housing 110 of upper cover 100 by conducting wire,
When carrying out plasma etching, the housing 110 of upper cover 100 is connected with the housing of chamber body 200.When performing etching technique, chamber
The housing of room main body 200 is ground connection, and the housing 110 of upper cover 100 is made of metal, and so just forms conductive plate portion
143 ground connection when performing etching technique.In order to simplify the structure of upper cover 100, it is preferable that first partition 144 can be by conduction
Material is made, and is conductively connected conductive plate portion 143 with housing 110 by first partition 144.A kind of specific reality as the present invention
Mode is applied, first partition 144 can be made of metal material.
The conductive plate portion 143 of same conductive material manufacture and first partition 144 may be employed, for example, gold of the same race may be employed
Belong to material manufacture conduction plate portion 143 and first partition 144.Conductive plate portion 143 can be integrally formed with first partition 144.In Fig. 5
In the embodiment shown in Fig. 6, conductive plate portion 143 and first partition 144 connect by the way that fastener (for example, screw) is fixed
It connects.It is easily understood that etching gas are flowed out from the uniform flow chamber in order to prevent, it is preferable that can conductive plate portion 143 with
Sealing ring between first partition 144 is set, and sealing ring is set between first partition 144 and housing 110.
Since conductive plate portion 143 is made of an electrically conducting material, conductive plate portion 143 is to the radio frequency of planar coil 130 in order to prevent
Energy production shielding action, it is preferable that the distance between roof of conductive plate portion 143 and housing 110 is less than or equal to medium window
The distance between roof of portion 141 and housing 110.
In Figure 5 in the upper cover of second shown of embodiment, lower face and the medium window portion 141 of conductive plate portion 143
Lower face it is concordant；In figure 6 in the upper cover of the third shown embodiment, the lower face of conductive plate portion 143 is higher than medium
The lower face of window portion 141.Conductive plate portion 143 can be circular slab.
In the present invention, the specific arrangement mode of venthole 143a is not particularly limited, as long as can will be passed through
Etching gas in the uniform flow chamber are equably emitted into chamber body 200.
Two kinds of arrangement modes of venthole 143a are given in the present invention.Shown in Fig. 9 and Figure 10 is venthole
A kind of arrangement mode of 143a, as shown in FIG., multiple venthole 143a are arranged as multi-turn around the center of circle of conductive plate portion 143.That is,
Multiple venthole 143a are arranged in using the center of circle of conductive plate portion 143 as on multiple concentric circles in the center of circle.
Another arrangement mode of venthole 143a shown in Figure 10 and Figure 11, as shown in the figure, venthole 143a is drawn
It is divided into multigroup, venthole described in every group is set along the radial direction of the conductive plate portion.
Preferably, the size of venthole 143a along conductive 143 radial direction of plate portion is more than venthole 143a along conductive plate portion 143
Circumferential direction size (for example, venthole 143a can be rectangle, the extending direction of the long side of the rectangle and conductive plate portion 143
Radial direction it is consistent), the venthole is more than the venthole along the conductive plate along the size of the conductive plate portion radial direction
The size of portion's circumferential direction, and multiple ventholes are arranged as multi-turn around the center of circle of the conductive plate portion, in same radial direction side
Upwards, two adjacent ventholes are located in non-conterminous circle.
Specifically, it is same in the radial direction, venthole 143a1With venthole 143a3It is adjacent, but venthole 143a1Position
In on circle C 1, and venthole 143a3On circle C3, round C2 is provided between circle C1 and circle C3, a circle is also equipped on circle C2
Venthole, but the venthole on circle C2 is (for example, venthole 143a2) and venthole 143a1Positioned at it is different in the radial direction.
The round metal that closure is formed in circular conductive plate portion 143 can be reduced by being arranged such venthole, reduce the generation of vortex, from
And it can generate heat to avoid conductive plate portion 143.
In order to be further reduced the generation of vortex, it is preferable that as shown in Figure 10, the middle part of conductive plate portion 143 is provided with
One venthole, the center of circle of conductive plate portion 143, which is located at, to be arranged in the venthole at conductive 143 middle part of plate portion.As
A kind of preferred embodiment of the present invention is arranged on the center of the venthole at conductive 143 middle part of plate portion and the conductive plate
The center of circle overlapping in portion.
In order to further prevent plasma gas from diffusing into the radio-frequency cavity, it is preferable that upper cover 100 can also wrap
Second partition 142 made of dielectric material are included, which is arranged in medium window portion 141 and conductive 143 phase of plate portion
Edge even, and second partition 142 is tightly connected with first partition 144.Second partition 142 can be with 141 shape of medium window portion
It is integrally formed.For example, medium window portion 141 is made of ceramic materials with second partition 142, it can be by being burnt to ceramic powders
It ties and is formed with the medium window portion 141 of integral structure and second partition 142.
Seal groove can be set towards the surface of second partition 142 in first partition 144, sealing is set in seal groove
Circle.
In the upper cover, sealing ring 150, upper cover 100 and chamber can be provided between medium plate portion 141 and housing 110
Sealing ring 150 can also be provided between the housing of room main body 200.
As another aspect of the present invention, as shown in Fig. 4 to Fig. 6, a kind of plasma etching equipment, Gai Dengli are provided
Sub- etching apparatus include planar coil 130, one end open chamber body 200, be arranged in chamber body 200 lower tablet electricity
Pole 300 and the upper cover 100 of the open end of covering chamber body 200, wherein, upper cover 100 is above-mentioned upper cover provided by the present invention,
Conductive plate portion 143 and the load-bearing surface of lower plate electrode 300 are oppositely arranged, and conductive plate portion 143 is grounded, and planar coil 130 is set
In medium window portion 141, and in the cavity.
As shown in Fig. 4 to Fig. 6, the etching apparatus can also include the adaptation being connected with planar coil 130 and penetrate
Frequency source.
When carrying out plasma etching to chip using etching apparatus provided by the present invention, chip is arranged on lower tablet
On the load-bearing surface of electrode 300.Since the conductive plate portion 143 of upper cover 100 is opposite with lower plate electrode 300, it is thereby possible to reduce
The impedance when radio-frequency power of lower plate electrode 300 is directly transferred in the form of electric field in chamber body 200, improves radio frequency
The efficiency of transmission of power enhances the electric field strength of wafer surface, improves the bombardment effect of ion pair chip.
It is easily understood that lower plate electrode 300 is connected with radio frequency source.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of upper cover for plasma etching equipment, the upper cover includes conductive housing, which is characterized in that the upper cover
Further include demarcation strip, the demarcation strip and the housing surround cavity, the demarcation strip include the medium window portion being connected with each other and
Conductive plate portion,
The conduction plate portion is constructed from a material that be electrically conducting, and the medium window portion is set around the conductive plate portion；
Planar coil is arranged in medium window portion and in the cavity.
2. upper cover according to claim 1, which is characterized in that air admission hole, the conduction plate portion are provided on the housing
On be provided with venthole.
3. upper cover according to claim 2, which is characterized in that the upper cover further includes first partition, the first partition
One end be connected with the housing, the other end is connected with the conductive plate portion, and the first partition is around the conductive plate portion
It sets, the cavity is separated into uniform flow chamber and radio-frequency cavity, the conduction plate portion is formed as the bottom wall of the uniform flow chamber, described
Air admission hole is connected with the uniform flow chamber, and equally distributed multiple ventholes are provided in the conduction plate portion.
4. upper cover according to claim 3, which is characterized in that the first partition is made of an electrically conducting material.
5. the upper cover according to claim 3 or 4, which is characterized in that between the conduction plate portion and the roof of the housing
Distance be less than or equal to the distance between roof of the medium window portion and the housing.
6. upper cover according to claim 5, which is characterized in that it is described conduction plate portion be circular slab, multiple ventholes
Multi-turn is arranged as around the center of circle of the conductive plate portion.
7. upper cover according to claim 5, which is characterized in that the conduction plate portion is circular slab, and the venthole is drawn
It is divided into multigroup, venthole described in every group is set along the radial direction of the conductive plate portion.
8. upper cover according to claim 7, which is characterized in that the venthole is big along the size of the conductive plate portion radial direction
In size of the venthole along the conductive plate portion circumferential direction, and multiple ventholes are around the center of circle of the conductive plate portion
Multi-turn is arranged as, adjacent two ventholes are located in non-conterminous circle in the radial direction same, the conduction plate portion
Middle part set there are one the venthole, the center of circle of the conduction plate portion be located at be arranged on it is described in the middle part of the conductive plate portion
In venthole.
9. the upper cover according to claim 3 or 4, which is characterized in that the upper cover is further included made of dielectric material
Two partition plates, the second partition are arranged on the edge being connected in the medium window portion with the conductive plate portion, and described second
Partition plate is tightly connected with the first partition.
10. a kind of plasma etching equipment, the plasma etching equipment include planar coil, one end open chamber body, set
It puts the lower plate electrode in the chamber body and covers the upper cover of the open end of the chamber body, which is characterized in that institute
Upper cover is stated as the upper cover described in any one in claim 1 to 9, the conduction plate portion and the carrying table of the lower plate electrode
Face is oppositely arranged, and the conduction plate portion ground connection, the planar coil is arranged in the medium window portion and in the cavity.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410824996.8A CN105789009B (en) | 2014-12-26 | 2014-12-26 | For the upper cover and plasma etching equipment of plasma etching equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410824996.8A CN105789009B (en) | 2014-12-26 | 2014-12-26 | For the upper cover and plasma etching equipment of plasma etching equipment |
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| CN105789009A CN105789009A (en) | 2016-07-20 |
| CN105789009B true CN105789009B (en) | 2018-05-25 |
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| CN108328935B (en) * | 2018-04-16 | 2024-02-27 | 中国工程物理研究院激光聚变研究中心 | Alternating electric field auxiliary optical element surface etching treatment device and treatment method |
| CN110706994B (en) * | 2018-07-10 | 2022-04-22 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN112376029B (en) * | 2020-11-11 | 2022-10-21 | 北京北方华创微电子装备有限公司 | Plasma immersion ion implantation apparatus |
| CN112820616B (en) * | 2021-01-18 | 2024-04-12 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101080133A (en) * | 2006-05-22 | 2007-11-28 | 新动力等离子体株式会社 | Inductively coupled plasma reactor |
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| CN102573258B (en) * | 2010-12-15 | 2014-11-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductive coupling plasma device |
| JP5808012B2 (en) * | 2011-12-27 | 2015-11-10 | 東京エレクトロン株式会社 | Plasma processing equipment |
| KR20140059422A (en) * | 2012-11-08 | 2014-05-16 | 엘아이지에이디피 주식회사 | Inductively coupled plasma processing apparatus and control method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101080133A (en) * | 2006-05-22 | 2007-11-28 | 新动力等离子体株式会社 | Inductively coupled plasma reactor |
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