CN103805961A - Organometallic chemical vapor deposition system as well as transmission bearing cavity and transmission method of organometallic chemical vapor deposition system - Google Patents
Organometallic chemical vapor deposition system as well as transmission bearing cavity and transmission method of organometallic chemical vapor deposition system Download PDFInfo
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- CN103805961A CN103805961A CN201210459095.4A CN201210459095A CN103805961A CN 103805961 A CN103805961 A CN 103805961A CN 201210459095 A CN201210459095 A CN 201210459095A CN 103805961 A CN103805961 A CN 103805961A
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Abstract
The invention relates to an organometallic chemical vapor deposition system comprising a reaction cavity and a transmission bearing cavity. The top of the reaction cavity is provided with a spray assembly, and the bottom of the reaction cavity is provided with a base opposite to the spray assembly. The transmission bearing cavity is internally provided with a manipulator and a part bearing unit, wherein the part bearing unit can at least bear two plate parts which can be transmitted between the transmission bearing cavity and the reaction cavity by the manipulator. The transmission bearing cavity of the organometallic chemical vapor deposition system provided by the invention can be used for effectively reducing the occupied area of the organometallic chemical vapor deposition system and increasing the production efficiency. The invention also provides the transmission bearing cavity and a transmission method of the organometallic chemical vapor deposition system.
Description
Technical field
The present invention relates to chemical vapour deposition technique field, particularly a kind of metal organic chemical vapor deposition system and transmission bearer chamber and transmission method.
Background technology
Metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) is a kind of Novel air phase epitaxy growing technology growing up on the basis of vapor phase epitaxial growth (VPE).It is using hydride of the organic compound of III family, II family element and V, VI family element etc. as crystal growth source material, in pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.Conventionally the crystal growth in MOCVD system is all to carry out in cold wall quartz (stainless steel) reaction chamber of normal pressure or the lower logical H2 of low pressure (10-100Torr), underlayer temperature is 500-1200 ℃, heat graphite base (substrate base is above graphite base) with radio-frequency induction, H2 carries metallorganics to vitellarium by the controlled fluid supply bubbling of temperature.
Below existing MOCVD device is described.Refer to Fig. 1, MOCVD device 100 of the prior art comprises: transmission cavity 102 and be arranged on described transmission cavity load/unload chamber 103 and reaction chamber 104 around.Described in described MOCVD device, bearing cavity is separated from each other or is directly connected with described reaction chamber.In described transmission cavity 102, be provided with mechanical manipulator, by described mechanical manipulator 101, wafer (not shown) is transported to described reaction chamber 104 from bearing cavity, after wafer machines in described reaction chamber, then from described reaction chamber, taken out the wafer after processing by described mechanical manipulator.Between described transmission cavity 102 and load/unload chamber 103, be provided with valve.Described load/unload chamber 103 is the mediation device of contact transmission cavity and external device.When work, when described wafer transmission is to after in described load/unload chamber, seal described load/unload chamber, and be evacuated, open again the valve between described load/unload chamber and described transmission cavity, described wafer transmission is arrived to described transmission cavity, then, again by described mechanical manipulator, by described wafer transmission in described reaction chamber.Load/unload of the prior art chamber 103 and reaction chamber 104 are arranged on described transmission cavity around, and therefore, unavoidable is that the floor space of described transmission cavity is very large, and volume is also very large, in maintenance process, the time of exhaust is also long especially, affects production efficiency.
For this reason, U.S. Pat 2002/0031420A1 provides a kind of chemical vapor deposition unit, to solve the above-mentioned problem that transmission cavity floor space is large, production efficiency is low of mentioning.Particularly, described United States Patent (USP) unites two into one transmission cavity and bearing cavity, i.e. a transmission bearer chamber.So, after transmission bearer chamber is evacuated, directly pending substrate can be transported to reaction chamber.Compared to original technology, reduce floor space, reduce cost.
But above-mentioned bearing cavity of the prior art and reaction chamber are only responsible for processing single substrate.Need to produce so multiple bearing cavitys and corresponding reaction chamber could improve turnout, such device not only cost is high, and can increase floor space.
Therefore need to produce a kind of system of carrying simultaneously and processing multiple substrates, raise the efficiency with this, improving yield reduces floor space simultaneously.
Summary of the invention
The object of this invention is to provide a kind of metal organic chemical vapor deposition system and transmission bearer chamber and transmission method, to solve the large and low problem of production efficiency of the floor space that exists in prior art.
According to an aspect of the present invention, the invention provides a kind of metal organic chemical vapor deposition system, comprise: reaction chamber, transmission bearer chamber, described reaction chamber top has spray assembly, described reaction chamber bottom has the pedestal being oppositely arranged with described spray assembly, in order to place the plate member of processing carrying substrates, described transmission bearer is provided with mechanical manipulator in chamber, it is characterized in that, described transmission bearer is also provided with parts load bearing unit in chamber, described parts load bearing unit at least can carry two plate member, described plate member can be transmitted by described mechanical manipulator between described transmission bearer chamber and described reaction chamber.
Preferably, on described pedestal, at least can carry the plate member described in two simultaneously.
Preferably, described plate member is at least for carrying two substrates, described substrate comprise pending substrate, treatment substrate or the substrate that is disposed in one or more.
Preferably, described parts load bearing unit comprises parts supporting part and for driving the lifting driving part of described parts supporting part up-and-down movement.
Preferably, described lifting driving part has location sensing unit, in described mechanical manipulator extend into described parts supporting part, described location sensing unit can send lifting actuate signal to described lifting driving part, with supporting part described in lifting, make described mechanical manipulator under the situation of not colliding described parts supporting part and be transferred in described reaction chamber.
Preferably, described parts supporting part comprises parts loading plate and temperature control unit, and described parts loading plate is in order to carry substrate pending described in described plate member or substrate or that be disposed.
Preferably, described temperature control unit comprises water cooling unit, and described water cooling unit has the water stream channel being arranged in described parts loading plate.
Preferably, described temperature control unit has the air cooling of comprising unit, and described air cooling unit has the gas channel being arranged in described parts loading plate.
Preferably, described temperature control unit is cooling plate, and described cooling plate is arranged on the top of described parts loading plate.
Preferably, described temperature control unit is cooling tube, and described cooling tube is arranged on the surrounding of described parts loading plate.
Preferably, the quantity of described parts loading plate is at least two, and described parts loading plate is vertically gone up the stacked setting in interval.
Preferably, described transmission bearer chamber comprises the firstth district and Second Region, and described the firstth district is provided with described mechanical manipulator that can stretching motion, and described Second Region is provided with described load bearing unit, and the volume in described the firstth district is less than the volume of described Second Region.
Preferably, described mechanical manipulator has carrier portion, described parts loading plate has carrier portion host cavity, accommodate the sub-portion of described substrate bearing when to extend in described parts supporting part when described mechanical manipulator, make in the motion of described mechanical manipulator and the motion engagement process of described parts supporting part, described mechanical manipulator can not collide described parts loading plate.
Preferably, described pedestal has heating unit, and described heating unit is the highest 1500 degrees Celsius for pedestal is heated to.
Preferably, described pedestal has the control unit of rotary actuation and rotary drive unit, described rotation control unit can be controlled the angle of rotation of described pedestal, places described plate member substrate so that described mechanical manipulator can transmit described plate member under shorter motion distance between described transmission bearer chamber and described reaction chamber.
Preferably, described transmission bearer chamber has gas barrier and diffuser.
Preferably, also comprise pedestal jacking apparatus, described jacking apparatus is for controlling the lifting of described plate member in described reaction chamber.
Preferably, described jacking apparatus comprises thimble and apparatus for controlling of lifting, in plate member is transferred to described reaction chamber time, described thimble can by described apparatus for controlling of lifting be raised up to one in transmission location in order to accept described plate member, and be reduced to a processing position by described apparatus for controlling of lifting, drop to processing position to make described thimble take described plate member to.In the time that described substrate is processed, described thimble drives described plate member to decline, in processing position.
Preferably, described plate member is fan-shaped or circular.
Preferably, described plate member is fan-shaped, and described plate member can be spliced into circle or annular.
Preferably, between described plate member, be seamless spliced, to avoid described pedestal to be polluted.
Preferably, between described plate member, be seamed splicing, so that splicing is convenient between described plate member.
According to another aspect of the invention, the invention provides a kind of transmission bearer chamber of metallochemistry gas-phase deposition system, comprise: mechanical manipulator, parts load bearing unit, described parts load bearing unit at least can carry two plate member, described metallochemistry gas-phase deposition system comprises: reaction chamber and the described transmission bearer chamber being connected with described reaction chamber, described plate member can be transmitted by described mechanical manipulator between described transmission bearer chamber and described reaction chamber.
Preferably, described reaction chamber top is provided with spray assembly, and described reaction chamber bottom is provided with pedestal, and described pedestal at least can carry two described plate member.
Preferably, described plate member at least can be carried two substrates, described substrate comprise pending substrate, treatment substrate or the substrate that is disposed in one or more.
Preferably, described parts load bearing unit comprises parts supporting part and for driving the lifting driving part of described parts supporting part up-and-down movement.
Preferably, described lifting driving part has location sensing unit, in described mechanical manipulator extend into described parts supporting part, described location sensing unit can send lifting actuate signal to described lifting driving part, with supporting part described in lifting, make described mechanical manipulator under the situation of not colliding described parts supporting part and be transferred in described reaction chamber.
Preferably, described parts supporting part comprises parts loading plate and temperature control unit, and described parts loading plate is in order to carry described plate member or substrate.
Preferably, described temperature control unit comprises water cooling unit, and described water cooling unit has the water stream channel being arranged in described parts loading plate.
Preferably, the quantity of described parts loading plate is at least two, and described parts loading plate is vertically gone up the stacked setting in interval.
Preferably, described transmission bearer chamber comprises the firstth district and Second Region, and described the firstth district is provided with described mechanical manipulator that can stretching motion, and described Second Region is provided with described load bearing unit, and the volume in described the firstth district is less than the volume of described Second Region.
Preferably, described mechanical manipulator has carrier portion, described parts loading plate has carrier portion host cavity, accommodate the sub-portion of described substrate bearing when to extend in described parts supporting part when described mechanical manipulator, make in the motion of described mechanical manipulator and the motion engagement process of described parts supporting part, described mechanical manipulator can not collide described parts loading plate.
Preferably, also comprise pedestal jacking apparatus, described jacking apparatus is for controlling the lifting of described plate member in described reaction chamber.
Preferably, described jacking apparatus comprises thimble and apparatus for controlling of lifting, described thimble can be raised up to a transmission location in order to accept described plate member by described apparatus for controlling of lifting, and be reduced to a processing position by described apparatus for controlling of lifting, drop to processing position to make described thimble take described plate member to.
Preferably, described plate member is fan-shaped or circular.
Preferably, described plate member is fan-shaped, and described plate member can be spliced into circle or annular.
According to another aspect of the invention, the invention provides a kind of transmission method of described metallochemistry gas-phase deposition system, comprising:
The plate member that carries pending substrate is put into described parts load bearing unit;
Described lifting driving part drives described supporting part to be elevated to the first height location, can be placed in described plate member substrate below while making described mechanical manipulator stretch in described parts load bearing unit;
Described mechanical manipulator stretches in described parts load bearing unit;
Described lifting driving part drives described supporting part to drop to the second height location, when making described plate member substrate be placed on described mechanical manipulator described in mechanical manipulator can not collide described parts loading plate;
Described mechanical manipulator transfers to described plate member in described reaction chamber.Preferably, also comprise:
Described thimble is risen to described transmission location by described jacking apparatus;
Described thimble drives described plate member to drop to described processing position.Preferably, also comprise:
Lifting driving part drives described supporting part to be elevated to third high degree position, and described mechanical manipulator is fetched the plate member that carries substrate after treatment in described reaction chamber, and stretches in described parts load bearing unit;
Described lifting driving part drives described supporting part to be elevated to the 4th height location, and described mechanical manipulator is placed into the described plate member that carries substrate described in after treatment on described loading plate.Preferably, also comprise that described supporting part carries out cooling step to described substrate after treatment.
Compared with prior art, in metal organic chemical vapor deposition system of the present invention and transmission bearer chamber and transmission method, described transmission bearer is provided with parts load bearing unit in chamber, described parts load bearing unit at least can carry two plate member, described plate member can be transmitted by described mechanical manipulator between described transmission bearer chamber and described reaction chamber, reduce the floor space of described metal organic chemical vapor deposition system, and reduce the transmission distance of mechanical manipulator at transmission cavity and described reaction chamber, improve production efficiency, and reduce the infringement to mechanical manipulator, delay the work-ing life of mechanical manipulator.
Wherein, on described pedestal, at least can carry the plate member described in two simultaneously, improve the processing efficiency of reaction chamber, described metal organic chemical vapor deposition system can be produced in batches, reduce production cost.
Wherein, described plate member is at least for carrying two substrates, described substrate comprise pending substrate, treatment substrate or the substrate that is disposed in one or more, this has also improved production efficiency, has lowered production cost.
Wherein, described parts load bearing unit comprises parts supporting part and for driving the lifting driving part of described parts supporting part up-and-down movement.Described lifting driving part has location sensing unit, in described mechanical manipulator extend into described parts supporting part, described location sensing unit can send lifting actuate signal to described lifting driving part, with supporting part described in lifting, make described mechanical manipulator under the situation of not colliding described parts supporting part and be transferred in described reaction chamber, also making the transmission automatization more of described plate member, having avoided the collision of mechanical manipulator and parts supporting part, reduce casualty ratio of accidents, reduced maintenance cost.
Wherein, described parts supporting part comprises parts loading plate and temperature control unit, and described parts loading plate is in order to carry substrate pending described in described plate member or substrate or that be disposed.Preferably, described temperature control unit comprises water cooling unit, and described water cooling unit has the water stream channel being arranged in described parts loading plate.Preferably, described temperature control unit has the air cooling of comprising unit, and described air cooling unit has the gas channel being arranged in described parts loading plate.Preferably, described temperature control unit is cooling plate, and described cooling plate is arranged on the top of described parts loading plate.Preferably, described temperature control unit is cooling tube, and described cooling tube is arranged on the surrounding of described parts loading plate.Because the temperature of reaction of metal organic chemical vapor deposition is up to more than 1,000 degree, therefore, cooling time that need to be longer, in described parts supporting part, set temperature control unit can effectively reduce rapidly substrate after treatment or carry the temperature of the plate member of substrate, has improved production efficiency.
Wherein, the quantity of described parts loading plate is at least two, and described parts loading plate vertically goes up the stacked setting in interval, is conducive to like this area in transmission bearer chamber to minimize, and is also beneficial to the transmission of mechanical manipulator for plate member.
Wherein, described transmission bearer chamber comprises the firstth district and Second Region, described the firstth district is provided with described mechanical manipulator that can stretching motion, described Second Region is provided with described load bearing unit, the volume in described the firstth district is less than the volume of described Second Region, has reduced so further the floor space in transmission bearer chamber.
Wherein, described mechanical manipulator has carrier portion, described parts loading plate has carrier portion host cavity, accommodate the sub-portion of described substrate bearing when to extend in described parts supporting part when described mechanical manipulator, make in the motion of described mechanical manipulator and the motion engagement process of described parts supporting part, described mechanical manipulator can not collide described parts loading plate, has avoided the generation of accident
Wherein, described pedestal has the control unit of rotary actuation and rotary drive unit, described rotation control unit can be controlled the angle of rotation of described pedestal, so that described mechanical manipulator can transmit described plate member under shorter motion distance between described transmission bearer chamber and described reaction chamber.
Wherein, described jacking apparatus comprises thimble and apparatus for controlling of lifting, in plate member is transferred to described reaction chamber time, described thimble can by described apparatus for controlling of lifting be raised up to one in transmission location in order to accept described plate member, and be reduced to a processing position by described apparatus for controlling of lifting, drop to processing position to make described thimble take described plate member to.This set only needs the tangential movement of mechanical manipulator, and without the up-and-down movement of mechanical manipulator, can make on the one hand the area in described the firstth district reduce, and has improved on the other hand production efficiency.
Wherein, described plate member is fan-shaped, described plate member can be spliced into circle, between described plate member, be seamless spliced, avoid directly falling described pedestal from the gas of spray assembly ejection, cause the pollution to described pedestal, improved the work-ing life of pedestal, reduced the wash number to described pedestal.Wherein, between described plate member, be seamed splicing, so that splicing is convenient between described plate member.
Accompanying drawing explanation
Fig. 1 is the vertical view of the metal organic chemical vapor deposition system of prior art.
Fig. 2 is the schematic diagram of metal organic chemical vapor deposition system of the present invention.
Fig. 3 is the structural representation in transmission bearer chamber in metal organic chemical vapor deposition system of the present invention.
Fig. 4 is that described plate member of the present invention is placed on the vertical view on described pedestal.
Fig. 5 is the base part side structure schematic diagram that is placed with plate member of the present invention.
Fig. 6 is the structural representation of parts supporting part of the present invention.
Fig. 7 is that mechanical manipulator of the present invention stretches to the schematic diagram in described parts load bearing unit.
Fig. 8 is the structural representation of mechanical manipulator of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Set forth in the following description a lot of details so that fully understand the present invention, implemented but the present invention can also adopt other to be different from alternate manner described here, therefore the present invention is not subject to the restriction of following public specific embodiment.
Fig. 2 is the schematic diagram of metal organic chemical vapor deposition system of the present invention, the reaction chamber 12 that this chemical gas-phase deposition system comprises transmission bearer chamber 11 and is connected with described transmission bearer chamber.Of the present invention preferred embodiment in, the described metal organic chemical vapor deposition system LED epitaxial wafer that is used for growing.
Described transmission bearer chamber 11 is provided with mechanical manipulator 110, parts load bearing unit 11a, diffuser 16 and gas barrier 17.In some other embodiment of the present invention, described transmission bearer chamber 11 also can not arrange described diffuser 16.Described transmission bearer unit 11a comprises parts supporting part 14 and is positioned at described parts supporting part 14 belows for driving the lifting driving part 15 of described parts supporting part 14 up-and-down movement.Described diffuser 16 is positioned at the top in described transmission bearer chamber 11.This diffuser 16 is connected with one or both in carrier gas source or reducing gas body source, in order to plate member and substrate thereof in clean described transmission bearer chamber.Of the present invention some preferred embodiment in, described carrier gas source is inert gas source, described reducing gas body source is hydrogen.This gas barrier 17 is positioned at the bottom in transmission bearer chamber 11, and its effect is the gas of discharging in transmission bearer chamber 11, and makes transmission bearer chamber 11 in vacuum state.Described mechanical manipulator 110 is for transfer plate parts (not shown) or substrate.Described plate member is in order at least two substrates of carrying, described substrate comprise pending substrate, treatment substrate or the substrate that is disposed in one or more.So just improve production efficiency, lowered production cost.Of the present invention some preferred embodiment in, what described mechanical manipulator 110 transmitted is described plate member, to enhance productivity.The pedestal 122 that described reaction chamber 12 tops are provided with spray assembly 121 and are oppositely arranged with described spray assembly 121.Described spray assembly 121 is connected with gas source, and described gas source comprises one or more in reacting precursor, carrier gas, sweeping gas.Described reacting precursor comprises III family metallorganics and V family hydride.Described III family metallorganics comprises one or more in Ga (CH3) 3, In (CH3) 3, Al (CH3) 3, Ga (C2H5) 3, Zn (C2H5) 3 gases.Described V family hydride comprises one or more in NH3, PH3, AsH3 gas.Described pedestal 122 is positioned at reaction chamber bottom, in order to place the described plate member or the substrate that carry substrate.Between described transmission bearer chamber 11 and described reaction chamber 12, be provided with valve 13, described valve 13 connects described transmission bearer chamber 11 and described reaction chamber 12.In the time that described valve 13 is opened, described mechanical manipulator 110 can transmit described plate member by valve 13 between described transmission bearer chamber 11 and described reaction chamber.Such design has reduced the transmission distance of mechanical manipulator at transmission cavity and described reaction chamber, has improved production efficiency, and has reduced the infringement to mechanical manipulator, has delayed the work-ing life of mechanical manipulator.
Fig. 3 is the structural representation in transmission bearer chamber 11 in chemical gas-phase deposition system of the present invention.As shown in Figure 3, described lifting driving part 15 is positioned at described parts supporting part 14 bottoms.Described lifting driving part 15 is in order to the whole parts supporting part 14 of lifting.Described lifting driving part 15 is provided with location sensing unit's (not shown), when described mechanical manipulator 110 extend into described parts supporting part 14, described location sensing unit (not shown) can send lifting actuate signal to described lifting driving part 15, with supporting part described in lifting, mechanical manipulator is transferred to plate member in described reaction chamber under the situation of not colliding described parts loading plate.Such design also makes the transmission automatization more of described plate member, has avoided the collision of mechanical manipulator and parts supporting part, has reduced casualty ratio of accidents, has reduced maintenance cost.Described transmission bearer chamber 11 is divided into the firstth district and Second Region.Described mechanical manipulator 110 is arranged in described the first district 71, and described load bearing unit 11a is arranged in described Second Region 72.Because the volume of described mechanical manipulator is very little, and be single armed mechanical manipulator, due to vertically up-and-down movement of load bearing unit 11a of the present invention, therefore described mechanical manipulator only needs to do stretching motion, thereby make, the volume in described the first district 71 can be very little, much smaller than described Second Region 72.Like this, just greatly reduce the floor space in transmission bearer chamber 11.
Fig. 4 is that described plate member is placed on the vertical view on described pedestal.As described in Figure 4, the structure of described plate member 123 is fan-shaped or circular, and described plate member 123 is at least carried at least two substrates.So, on described pedestal, at least can carry the plate member 123 described in two simultaneously.Such design has improved the processing efficiency of reaction chamber, and described metal organic chemical vapor deposition system can be produced in batches, has reduced production cost.
In preferably embodiment of the present invention, described plate member 123 is fan-shaped, and quantity is 4 or 6, and described plate member 123 can be spliced into annular or circle.In the preferred embodiment of the present invention, described plate member 123 is spliced into annular, so that described annular center arranges rotation control unit, described rotation control unit can be controlled the angle of rotation of described pedestal, so that described mechanical manipulator can transmit described plate member under shorter motion distance between described transmission bearer chamber and described reaction chamber.
Fig. 5 is the base part side structure schematic diagram that is placed with plate member.The plate member of described pedestal in order to place treatment substrate or to load treatment substrate, preferably, in preferred forms of the present invention, described pedestal is in order to place the plate member 123 that is mounted with treatment substrate.Described plate member 123 comprises the first plate member 123a and the second plate member 123b, the edge of described the first plate member 123a has the first installation portion (not label), the edge of described the second plate member 123b has the second installation portion (not label) matching with described the first installation portion, described the first installation portion is upper end salient, described the second installation portion is lower end salient, seamless spliced to make can to realize between described the first plate member 123a and described the second plate member 123b, to avoid described pedestal to be polluted, particularly, avoid directly falling described pedestal from the gas of described spray assembly ejection, such design has improved the work-ing life of pedestal, reduce the wash number to described pedestal.Described pedestal 122 has heating unit (not shown), rotarilys actuate control unit and rotary drive unit (not shown) and jacking apparatus (not shown).Outside this splicing, in some other embodiments of the present invention, described plate member also can be done seamed splicing, so that the splicing of plate member on described pedestal.
Described heating unit can be heated to pedestal the highest 1500 degrees Celsius.Because chemical vapor deposition unit of the present invention is the metal organic chemical vapor deposition device for the LED epitaxial wafer of growing, therefore, pedestal of the present invention need remain on substrate the treatment temp of 1,000 to 1,200 degrees Celsius.After pyroreaction so, described mechanical manipulator is fetched into described substrate to carry out behind transmission bearer chamber coolingly in time, is conducive to accelerate technical process, reduces substrate cooling time, has improved production efficiency.
Described jacking apparatus (not shown) is for controlling the lifting of described plate member in described reaction chamber 12.Described jacking apparatus comprises thimble and apparatus for controlling of lifting, described thimble can be raised up to a transmission location in order to accept described plate member by described apparatus for controlling of lifting, and be reduced to a processing position by described apparatus for controlling of lifting, drop to processing position to make described thimble take described plate member to.Described thimble is in described plate member is transferred to described reaction chamber time, and described thimble is in transmission location, so that described mechanical manipulator can be positioned over the plate member that carries substrate on thimble.After described mechanical manipulator is drawn back, described thimble drives described plate member to drop in processing position, so that the processing to described substrate.This set only needs the tangential movement of mechanical manipulator, and without the up-and-down movement of mechanical manipulator, can make on the one hand the area in described the firstth district reduce, and has improved on the other hand production efficiency.Described rotation control unit can be controlled the angle of rotation of described pedestal 122, so that described mechanical manipulator is placed described plate member 123, thereby has improved production efficiency.
Fig. 6 is the structural representation of parts supporting part 14.Described parts supporting part 14 comprises parts loading plate 141 and temperature control unit (not shown).The quantity of described parts loading plate 141 is at least two, and vertically goes up the stacked setting in interval, in order to carry the described pending or substrate that is disposed.Be conducive to like this area in transmission bearer chamber to minimize, be also beneficial to the transmission of mechanical manipulator for plate member.Described temperature control unit (not shown) can be in water cooling unit, air cooling unit, cooling plate or cooling tube one or more.Described water cooling unit has the water stream channel being arranged in described parts loading plate 141.Described air cooling unit has the gas channel being arranged in described parts loading plate 141.Described cooling plate is arranged on the top of described parts loading plate 141.Described cooling tube is arranged on the surrounding of described parts loading plate 141.Because the temperature of reaction of metal organic chemical vapor deposition is up to more than 1,000 degree, therefore, cooling time that need to be longer, can effectively reduce rapidly substrate after treatment or carry the temperature of the plate member of substrate in the interior set temperature control unit of described parts supporting part 14 (not shown), improve production efficiency.Preferably, described parts load bearing unit 14 comprises carrying the bracing frame 142 of described parts loading plate, and described parts loading plate 141 has carrier portion host cavity 1411, in order to accommodate the carrier portion of described mechanical manipulator 110.
Please refer to Fig. 7 and Fig. 8, Fig. 8 is the structural representation of mechanical manipulator.Fig. 7 is that mechanical manipulator stretches to the schematic diagram in described parts load bearing unit.Described mechanical manipulator 110 has carrier portion 111.Described parts loading plate 141 has carrier portion host cavity (not label), accommodate the sub-portion 111 of substrate bearing of described mechanical manipulator 110 when interior in order to extend into described parts loading plate 141 when described mechanical manipulator 110, make in the motion of described mechanical manipulator 110 and the motion engagement process of described parts supporting part, described mechanical manipulator 110 can not collide described parts loading plate, has avoided the generation of accident.
To the transmitting procedure of described metal organic chemical vapor deposition system be introduced below.
First, open described transmission bearer chamber 11, the plate member of pending carrying substrates is put in described parts load bearing unit 11a.Close described transmission bearer chamber 11, and described transmission bearer chamber 11 is vacuumized.
Secondly, after completing described transmission bearer chamber 11 being vacuumized, described lifting driving part 15 drives described supporting part 14 to be elevated to the first height location, while making described mechanical manipulator 110 stretch in described parts load bearing unit 11a, can be placed in described plate member below, allow again described lifting driving part 15 drive described supporting part 14 to drop to the second height location, when making described plate member be placed on described mechanical manipulator 110 described in mechanical manipulator 110 can not collide described parts loading plate 141.
Then, open the valve 13 between described transmission bearer chamber 11 and reaction chamber 12, described mechanical manipulator 110 transfers to described plate member in reaction chamber 12, and the jacking apparatus in described reaction chamber 12 is risen to described transmission location by described thimble; Described mechanical manipulator 110 is retracted, and described plate member is positioned on described thimble; Described thimble is elevated to processes position; Described substrate is processed.In random time after described mechanical manipulator is retracted and before described substrate is processed, close the valve 13 between described transmission bearer chamber 11 and reaction chamber 12.
Finally, when described reaction chamber 12 completes after one or many chemical vapor deposition method, lifting driving part 15 drives described supporting part 14 to be elevated to third high degree.Complete after described supporting part 14 liftings, described mechanical manipulator 110 is fetched the plate member that carries substrate after treatment in described reaction chamber 12, and is retracted in described parts load bearing unit.Described lifting driving part 15 drives described supporting part 14 to be elevated to the 4th height location, and described mechanical manipulator 110 is placed into described plate member on described parts loading plate 141.Select excellently, after described mechanical manipulator 110 is placed on the described parts loading plate 141 in transmission bearer chamber 11 by described plate member, described supporting part 14 carries out cooling to described substrate after treatment.Described mechanical manipulator 110 is retracted into the firstth district in described transmission bearer chamber.
Although the present invention discloses as above with preferred embodiment, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (40)
1. a metal organic chemical vapor deposition system, comprise: reaction chamber, transmission bearer chamber, described reaction chamber top has spray assembly, described reaction chamber bottom has the pedestal being oppositely arranged with described spray assembly, described transmission bearer is provided with mechanical manipulator in chamber, it is characterized in that, described transmission bearer is also provided with parts load bearing unit in chamber, described parts load bearing unit at least can carry two plate member, and described plate member can be transmitted by described mechanical manipulator between described transmission bearer chamber and described reaction chamber.
2. metal organic chemical vapor deposition system as claimed in claim 1, is characterized in that, described pedestal at least can carry two described plate member.
3. metal organic chemical vapor deposition system as claimed in claim 2, is characterized in that, described plate member at least can be carried two substrates, described substrate comprise pending substrate, treatment substrate or the substrate that is disposed in one or more.
4. metal organic chemical vapor deposition system as claimed in claim 3, is characterized in that, described parts load bearing unit comprises parts supporting part and for driving the lifting driving part of described parts supporting part up-and-down movement.
5. metal organic chemical vapor deposition system as claimed in claim 4, it is characterized in that, described lifting driving part has location sensing unit, in described mechanical manipulator extend into described parts supporting part, described location sensing unit can send lifting actuate signal to described lifting driving part, with supporting part described in lifting, make described mechanical manipulator under the situation of not colliding described parts supporting part, transmit described plate member in described reaction chamber.
6. metal organic chemical vapor deposition system as claimed in claim 4, is characterized in that, described parts supporting part comprises parts loading plate and temperature control unit, and described parts loading plate is in order to carry described plate member or substrate.
7. metal organic chemical vapor deposition system as claimed in claim 6, is characterized in that, described temperature control unit comprises water cooling unit, and described water cooling unit has the water stream channel being arranged in described parts loading plate.
8. metal organic chemical vapor deposition system as claimed in claim 6, is characterized in that, described temperature control unit has the air cooling of comprising unit, and described air cooling unit has the gas channel being arranged in described parts loading plate.
9. metal organic chemical vapor deposition system as claimed in claim 6, is characterized in that, described temperature control unit is cooling plate, and described cooling plate is arranged on the top of described parts loading plate.
10. metal organic chemical vapor deposition system as claimed in claim 6, is characterized in that, described temperature control unit is cooling tube, and described cooling tube is arranged on the surrounding of described parts loading plate.
11. metal organic chemical vapor deposition systems as described in any one in claim 7 to 10, is characterized in that, the quantity of described parts loading plate is at least two, and described parts loading plate is vertically gone up the stacked setting in interval.
12. metal organic chemical vapor deposition systems as claimed in claim 11, it is characterized in that, described transmission bearer chamber comprises the firstth district and Second Region, described the firstth district is provided with described mechanical manipulator that can stretching motion, described Second Region is provided with described parts load bearing unit, and the volume in described the firstth district is less than the volume of described Second Region.
13. metal organic chemical vapor deposition systems as claimed in claim 12, it is characterized in that, described mechanical manipulator has carrier portion, described parts loading plate has carrier portion host cavity, accommodate the sub-portion of described substrate bearing when to extend in described parts supporting part when described mechanical manipulator, make in the motion of described mechanical manipulator and the motion engagement process of described parts supporting part, described mechanical manipulator can not collide described parts loading plate.
14. metal organic chemical vapor deposition systems as claimed in claim 13, is characterized in that, described pedestal has heating unit, and described heating unit is the highest 1500 degrees Celsius for pedestal is heated to.
15. metal organic chemical vapor deposition systems as claimed in claim 14, it is characterized in that, described pedestal has the control unit of rotary actuation and rotary drive unit, described rotation control unit can be controlled the angle of rotation of described pedestal, so that described mechanical manipulator can transmit described plate member under shorter motion distance between described transmission bearer chamber and described reaction chamber.
16. metal organic chemical vapor deposition systems as claimed in claim 15, is characterized in that, described transmission bearer chamber has gas barrier and diffuser.
17. metal organic chemical vapor deposition systems as claimed in claim 16, is characterized in that, also comprise pedestal jacking apparatus, and described jacking apparatus is for controlling the lifting of described plate member in described reaction chamber.
18. metal organic chemical vapor deposition systems as claimed in claim 17, it is characterized in that, described jacking apparatus comprises thimble and apparatus for controlling of lifting, described thimble can be raised up to a transmission location in order to accept described plate member by described apparatus for controlling of lifting, and be reduced to a processing position by described apparatus for controlling of lifting, drop to processing position to make described thimble take described plate member to.
19. metal organic chemical vapor deposition systems as claimed in claim 18, is characterized in that, described plate member is fan-shaped or circular.
20. metal organic chemical vapor deposition systems as claimed in claim 19, is characterized in that, described plate member is fan-shaped, and described plate member can be spliced into circle or annular.
21. metal organic chemical vapor deposition systems as claimed in claim 20, is characterized in that, are seamless spliced between described plate member, to avoid described pedestal to be polluted.
22. metal organic chemical vapor deposition systems as claimed in claim 20, is characterized in that, are seamed splicing between described plate member, so that splicing is convenient between described plate member.
The transmission bearer chamber of 23. 1 kinds of metallochemistry gas-phase deposition systems, it is characterized in that, comprise mechanical manipulator, parts load bearing unit, described parts load bearing unit at least can carry two plate member, described metallochemistry gas-phase deposition system comprises: reaction chamber and the described transmission bearer chamber being connected with described reaction chamber, described plate member can be transmitted by described mechanical manipulator between described transmission bearer chamber and described reaction chamber.
The transmission bearer chamber of 24. metallochemistry gas-phase deposition systems as claimed in claim 23, is characterized in that, described reaction chamber top is provided with spray assembly, and described reaction chamber bottom is provided with pedestal, and described pedestal at least can carry two described plate member.
The transmission bearer chamber of 25. metallochemistry gas-phase deposition systems as claimed in claim 24, is characterized in that, described plate member at least can be carried two substrates, described substrate comprise pending substrate, treatment substrate or the substrate that is disposed in one or more.
The transmission bearer chamber of 26. metallochemistry gas-phase deposition systems as claimed in claim 25, is characterized in that, described parts load bearing unit comprises parts supporting part and for driving the lifting driving part of described parts supporting part up-and-down movement.
The transmission bearer chamber of 27. metallochemistry gas-phase deposition systems as claimed in claim 26, it is characterized in that, described lifting driving part has location sensing unit, in described mechanical manipulator extend into described parts supporting part, described location sensing unit can send lifting actuate signal to described lifting driving part, with supporting part described in lifting, described mechanical manipulator is transferred to described plate member in described reaction chamber under the situation of not colliding described parts supporting part.
The transmission bearer chamber of 28. metallochemistry gas-phase deposition systems as claimed in claim 27, is characterized in that, described parts supporting part comprises parts loading plate and temperature control unit, and described parts loading plate is in order to carry described plate member or substrate.
The transmission bearer chamber of 29. metallochemistry gas-phase deposition systems as claimed in claim 28, is characterized in that, described temperature control unit comprises water cooling unit, and described water cooling unit has the water stream channel being arranged in described parts loading plate.
The transmission bearer chamber of 30. metallochemistry gas-phase deposition systems as claimed in claim 29, is characterized in that, the quantity of described parts loading plate is at least two, and described parts loading plate is vertically gone up the stacked setting in interval.
The transmission bearer chamber of 31. metallochemistry gas-phase deposition systems as claimed in claim 30, it is characterized in that, described transmission bearer chamber comprises the firstth district and Second Region, described the firstth district is provided with described mechanical manipulator that can stretching motion, described Second Region is provided with described load bearing unit, and the volume in described the firstth district is less than the volume of described Second Region.
The transmission bearer chamber of 32. metallochemistry gas-phase deposition systems as claimed in claim 31, it is characterized in that, described mechanical manipulator has carrier portion, described parts loading plate has carrier portion host cavity, accommodate the sub-portion of described substrate bearing when to extend in described parts supporting part when described mechanical manipulator, make in the motion of described mechanical manipulator and the motion engagement process of described parts supporting part, described mechanical manipulator can not collide described parts loading plate.
The transmission bearer chamber of 33. metallochemistry gas-phase deposition systems as claimed in claim 32, is characterized in that, also comprises pedestal jacking apparatus, and described jacking apparatus is for controlling the lifting of described plate member in described reaction chamber.
The transmission bearer chamber of 34. metallochemistry gas-phase deposition systems as claimed in claim 33, it is characterized in that, described jacking apparatus comprises thimble and apparatus for controlling of lifting, described thimble can be raised up to a transmission location in order to accept described plate member by described apparatus for controlling of lifting, and be reduced to a processing position by described apparatus for controlling of lifting, drop to processing position to make described thimble take described plate member to.
The transmission bearer chamber of 35. metallochemistry gas-phase deposition systems as claimed in claim 34, is characterized in that, described plate member is fan-shaped or circular.
The transmission bearer chamber of 36. metallochemistry gas-phase deposition systems as claimed in claim 35, is characterized in that, described plate member is fan-shaped, and described plate member can be spliced into circle or annular.
The transmission method of 37. metallochemistry gas-phase deposition systems as described in any one in claim 1 to 22, is characterized in that, comprising:
The plate member that carries pending substrate is put into described parts load bearing unit;
Described lifting driving part drives described supporting part to be elevated to the first height location, can be placed in described plate member substrate below while making described mechanical manipulator stretch in described parts load bearing unit;
Described mechanical manipulator stretches in described parts load bearing unit;
Described lifting driving part drives described supporting part to drop to the second height location, when making described plate member substrate be placed on described mechanical manipulator described in mechanical manipulator can not collide described parts loading plate;
Described mechanical manipulator transfers to described plate member in described reaction chamber.
The transmission method of 38. metal organic chemical vapor deposition systems as claimed in claim 37, is characterized in that, also comprises:
Described thimble is risen to described transmission location by described jacking apparatus;
Described thimble drives described plate member to drop to described processing position.
The transmission method of 39. metal organic chemical vapor deposition systems as claimed in claim 38, is characterized in that, also comprises:
Lifting driving part drives described supporting part to be elevated to third high degree position, and described mechanical manipulator is fetched the plate member that carries substrate after treatment in described reaction chamber, and stretches in described parts load bearing unit;
Described lifting driving part drives described supporting part to be elevated to the 4th height location, and described mechanical manipulator is placed into the described plate member that carries substrate described in after treatment on described loading plate.
The transmission method of 40. metal organic chemical vapor deposition systems as claimed in claim 39, is characterized in that, also comprises, described supporting part carries out cooling step to described substrate after treatment.
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| CN201210459095.4A CN103805961B (en) | 2012-11-14 | 2012-11-14 | Metal organic chemical vapor deposition system and its transmission bearing cavity and transmission method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210459095.4A CN103805961B (en) | 2012-11-14 | 2012-11-14 | Metal organic chemical vapor deposition system and its transmission bearing cavity and transmission method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105441876A (en) * | 2014-09-02 | 2016-03-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film deposition apparatus |
| CN110416137A (en) * | 2018-04-30 | 2019-11-05 | 汉民科技股份有限公司 | Substrate transfer mechanism and film-forming system for semiconductor technology |
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| US20020031420A1 (en) * | 1998-09-28 | 2002-03-14 | Applied Material Inc. | Single wafer load lock with internal wafer transport |
| CN201901699U (en) * | 2010-09-17 | 2011-07-20 | 中微半导体设备(上海)有限公司 | MOCVD (metal-organic chemical vapor deposition) processing system for automatic substrate conveying and in-situ substrate test |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20020031420A1 (en) * | 1998-09-28 | 2002-03-14 | Applied Material Inc. | Single wafer load lock with internal wafer transport |
| CN201901699U (en) * | 2010-09-17 | 2011-07-20 | 中微半导体设备(上海)有限公司 | MOCVD (metal-organic chemical vapor deposition) processing system for automatic substrate conveying and in-situ substrate test |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105441876A (en) * | 2014-09-02 | 2016-03-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film deposition apparatus |
| CN105441876B (en) * | 2014-09-02 | 2019-04-23 | 北京北方华创微电子装备有限公司 | A kind of film deposition equipment |
| CN110416137A (en) * | 2018-04-30 | 2019-11-05 | 汉民科技股份有限公司 | Substrate transfer mechanism and film-forming system for semiconductor technology |
| CN110416137B (en) * | 2018-04-30 | 2022-03-15 | 汉民科技股份有限公司 | Substrate conveying mechanism for semiconductor process and film forming system |
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| Publication number | Publication date |
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| CN103805961B (en) | 2017-04-05 |
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