CN110416137A - Substrate transfer mechanism and film-forming system for semiconductor technology - Google Patents
Substrate transfer mechanism and film-forming system for semiconductor technology Download PDFInfo
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- CN110416137A CN110416137A CN201910320003.6A CN201910320003A CN110416137A CN 110416137 A CN110416137 A CN 110416137A CN 201910320003 A CN201910320003 A CN 201910320003A CN 110416137 A CN110416137 A CN 110416137A
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- 239000000758 substrate Substances 0.000 title claims abstract description 141
- 230000007246 mechanism Effects 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 210000000245 forearm Anatomy 0.000 claims abstract description 42
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 14
- 239000010408 film Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 210000000056 organ Anatomy 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Substrate transfer mechanism and film-forming system in a kind of film formation device for semiconductor technology, the substrate transfer mechanism include multiple pick-and-place portions, multiple forearms and a postbrachium.Multiple access portion is not fixed on multiple forearms, is respectively for picking and placing a substrate.Multiple forearm be set to the postbrachium on, and be respectively relative to the postbrachium have close to or far from movement.
Description
Technical field
The present invention relates to it is a kind of on semiconductor substrate formed film gas phase film-forming system, specifically, be about
Substrate transfer mechanism in a kind of film formation device for semiconductor technology.
Background technique
It is formed in thin-film process on a semiconductor substrate, is to utilize gas injection in the reaction chamber of film formation device receiving substrate
Device mixes gas level (or vertical) injection to the substrate top on carrier (susceptor) that gas source is supplied,
The physically or chemically reaction for recycling heating caused, thus the deposition film on substrate (such as: wafer).
Existing film formation device includes one for generating the reaction chamber of vapor deposition film, is enclosed by cavity wall and sets one close to vacuum
Airtight chamber.A carrier with multiple substrate holding structures is equipped in the chamber, to carry and fix multi-piece substrate.
It is opposite with substrate holding structure to there is an opposite surface to form component, and a gas ejector is formed and provided between the two.The gas
Injector has independent three gas flows, is generally respectively used to import and convey the gas for being used for technique, such as: H2/N2/V
Race's unstrpped gas, the mixing of III group unstrpped gas and carrier gas (carrier gas) and H2/N2/ V race unstrpped gas, and water
It is mixed on flat injection to substrate, the physically or chemically reaction for recycling heating caused, to be deposited on substrate thin
Film.
Above-mentioned film formation device is that one receiving casket (cassette) is sequentially loaded into multi-piece substrate from outside, can be operated by personnel very
Empty tool takes out each substrate from receiving casket, then is respectively placed on different substrate holding structures.But manually in sorbing substrate
During positive (circuit surface) and placement, on possible dust-free clothes or vacuum tool has particle (particle) to fall on substrate
Surface, to pollute route on substrate and influence yield.Attached mechanical arm is taken to accommodate each substrate certainly alternatively, vacuum can be used
Casket takes out, then is respectively placed on different substrate holding structures, but each actuation cycle or complete stroke be only capable of picking and placing it is same
Plate base, therefore production capacity (throughput) is bad.On the other hand, vacuum tool or vacuum robot directly contact base
The front of plate may damage established microfine circuit, and be placed in substrate holding structure and also have the mistake that position is not aligned with
Difference generates.
In conclusion there is an urgent need for a kind of gas phase film-forming systems that can improve foregoing problems for semiconductors manufacture, it is possible thereby to mention
Rise the quality and the yield of unit time of deposition film.
Summary of the invention
The present invention provides a kind of substrate transfer mechanism and gas phase film-forming system, by improving setting for substrate transfer mechanism
Meter to promote the production capacity (i.e. the yield of unit time) of depositing operation, and avoids the route of foreign particle pollution substrate.
The present invention provides a kind of substrate transfer mechanism and gas phase film-forming system, assists the substrate conveyer by a video camera
Structure places substrate to correct position, to increase the manufacturing yield of depositional coating.
The present invention provides a kind of substrate transfer mechanism, utilizes electrostatic chuck (E-chuck) sorbing substrate front, it is ensured that base
Established microfine circuit is not by crushing or scratch on plate.
Then, the present invention proposes that an embodiment, a kind of substrate transfer mechanism for semiconductor technology include: a postbrachium；
Multiple forearms, be set to the postbrachium on, and be respectively relative to the postbrachium have close to or far from movement；And multiple pick-and-place portions, respectively
The pick-and-place portion is for one substrate of pick-and-place, and is fixed on corresponding multiple forearms.
In another embodiment, multiple pick-and-place portion is electrostatic chuck.
In another embodiment, multiple forearm is respectively arranged on the two opposite surfaces of the postbrachium, and can be in the postbrachium
Length direction on flex outward or be inwardly overlapped.
In another embodiment, which also includes a fixed arm, which is set on the fixed arm, and point
Not relative to the fixed arm have close to or far from movement.
In another embodiment, which also includes a support portion, which connect with the fixed arm, and
The fixed arm is driven to rotate.
In another embodiment, which also includes a base portion, which connect with the support portion, and drives
The support portion is opposite the movement risen or fallen.
The present invention also proposes an embodiment, and a kind of film-forming system for semiconductor technology includes: a reaction chamber, including
Multiple substrate holding structures；An and substrate transfer mechanism a, comprising: postbrachium；Multiple forearms are set on the postbrachium, and respectively
Relative to the postbrachium have close to or far from movement；And multiple pick-and-place portions, respectively the pick-and-place portion is for picking and placing a substrate to the substrate
Holding member, and it is fixed on corresponding multiple forearms.
In another embodiment, multiple pick-and-place portion sequentially draws multiple substrates, and sequentially places multiple substrate to right
On the multiple substrate holding structure answered.
In another embodiment, when for one from the substrate holding structure one substrate of absorption, this is more in multiple pick-and-place portion
Another one has drawn another substrate in a pick-and-place portion, then which is placed in the substrate holding structure just unloaded
On.
In another embodiment, which also includes a video camera, when one places a base in multiple pick-and-place portion
Plate one into multiple substrate holding structure, which absorbs the image of the substrate Yu the substrate holding structure, by sentencing
The relative position both broken in the image is to adjust the position in the pick-and-place portion.
In another embodiment, multiple pick-and-place portion is electrostatic chuck.
In another embodiment, multiple forearm is respectively arranged on the two opposite surfaces of the postbrachium, and can be in the postbrachium
Length direction on flex outward or be inwardly overlapped.
In another embodiment, which also includes a fixed arm, which is set on the fixed arm, and point
Not relative to the fixed arm have close to or far from movement.
In another embodiment, which also includes a support portion, which connect with the fixed arm, and
The fixed arm is driven to rotate.
In another embodiment, which also includes a base portion, which connect with the support portion, and drives
The support portion is opposite the movement risen or fallen.
Detailed description of the invention
Figure 1A~1D is the schematic side view of the gas phase film-forming system of first embodiment of the invention.
Fig. 2A~2D is the schematic top plan view of the gas phase film-forming system of first embodiment of the invention.
Fig. 3 A~3D is the schematic side view of the gas phase film-forming system of second embodiment of the invention.
Fig. 4 A~4D is the schematic top plan view of the gas phase film-forming system of second embodiment of the invention.
Main element symbol description:
10 film-forming systems
11 substrate transfer mechanisms
12 reaction chambers
80 wafer caskets
111 first forearms
112 first pick-and-place portions
113 second forearms
114 second pick-and-place portions
115 postbrachiums
116 fixed arms
117 support portions
118 base portions
121 substrate holding structures
122 video cameras
123 substrate holding structures
W1 substrate
W2 substrate
W3 substrate
Specific embodiment
Hereinafter, implementing various implementation forms of the invention just to be illustrated.The attached drawing of accompanying is please referred to, and right with reference to its
The explanation answered.In addition, in this specification and attached drawing, substantially identical or identical composition can give identical symbol and to omit its heavy
Multiple explanation.
Figure 1A~1D is the schematic side view of the gas phase film-forming system of first embodiment of the invention.As shown in Figure 1A, it forms a film
System 10 includes a substrate transfer mechanism 11 and a reaction chamber 12.Separately there is the wafer casket 80 of a loading more wafers, it can substrate
Transport mechanism 11 draws the wafer wherein stored or places wafer to the case wherein vacated.Reaction chamber 12 is protected including multiple substrates
Component is held, in there is a video camera 122 on substrate holding structure 121.
The substrate transfer mechanism 11 includes one first forearm 111, one first pick-and-place portion 112, one second forearm 113,1 the
Two pick-and-place portions 114 and a postbrachium 115.First forearm 111 and the second forearm 113 are set on the postbrachium 115, and are respectively relative to
The postbrachium 115 have close to or far from movement.First forearm 111 and the second forearm 113 are connected to the phase of the postbrachium 115
Pair two surfaces (the upper surface and the lower surface) on, and can flex outward on the length direction of the postbrachium 115 or inwardly be overlapped.It should
First pick-and-place portion 112 and the second pick-and-place portion 114 are individually fixed in corresponding first forearm 111 and for picking and placing a substrate
On two forearms 113.
The substrate transfer mechanism 11 also includes a fixed arm 116, a support portion 117 and a base portion 118.The postbrachium 115 is set
In on the fixed arm 116, and be respectively relative to the fixed arm 116 have close to or far from movement.The support portion 117 is fixed with this
Arm 116 connects, and the fixed arm 116 is driven to rotate.The base portion 118 is connect with the support portion 117, and drives the support portion 117
It is opposite to have the movement risen or fallen.
First forearm 111 extends in the wafer casket 80 relative to the postbrachium 115, and then the first pick-and-place portion 112 is inhaled
A substrate W1 is taken, while second forearm 113 is shunk back to 115 lower section of the postbrachium, and is overlapped with the postbrachium 115.
Figure 1B~1D is the fragmentation action of hookup 1A in first embodiment.As shown in Figure 1B, in the first pick-and-place portion 112
After drawing substrate W1, when the support portion 117 can rise to appropriate location, which extends relative to the postbrachium 115
To the wafer casket 80, then the second pick-and-place portion 114 draws a substrate W2.When the first pick-and-place portion 112 draws substrate W1
And after the second pick-and-place portion 114 draws substrate W2 simultaneously, two plate base W1 and W2 can be delivered in the reaction chamber 12.
Referring to content depicted in Fig. 1 C, which can place substrate W1 in the substrate holding structure 121
On, while the second pick-and-place portion 114 for having drawn substrate W2 can be waited in the lower section of the postbrachium 115.When the first pick-and-place portion
112 place substrate W1 into the substrate holding structure 121, which absorbs substrate W1 and the substrate holding structure
121 image, by judging the relative position of the two in the image to adjust the position in the first pick-and-place portion 112.
Then, after the substrate holding structure 121 carries substrate W1, which rises, and carrier can turn
Another substrate holding structure 123 to same pick-and-place positioning.At this point, first forearm 111 is shunk back to 115 lower section of the postbrachium, and
It is overlapped with the postbrachium 115.Second forearm 113 is (not shown relative to the carrier that the postbrachium 115 extends to inside reaction chamber 12
On out), to allow the second pick-and-place portion 114 that can suitably place substrate W2 on the substrate holding structure 123, such as Fig. 1 D institute
Show.
In this embodiment, respectively the pick-and-place portion (112,114) is an electrostatic chuck, stores electrical potential energy using dielectric material
Electrostatic is generated, removes the materials such as sorbing substrate using electrostatic.In addition, the first forearm 111 of the substrate transfer mechanism 11, the first pick-and-place portion
112, the second forearm 113, the second pick-and-place portion 114, postbrachium 115, fixed arm 116, support portion 117 and base portion 118 are similar mechanical
Arm application but it is also possible to be various mechanical organs combination, such as: connecting rod, linear slide rail, servo motor, linear motor,
When rule skin (time belt) belt wheels, when the rule mechanical organs such as belt.
Comparative diagram 1A~1D, Fig. 2A~2D are the schematic top plan view of the gas phase film-forming system of first embodiment of the invention.In
The video camera 122 in Fig. 2A~2D on the substrate holding structure (121,123) is not drawn, but each figure respectively correspond Figure 1A~
The schematic side view of 1D, therefore illustrate to describe with reference to front.
Fig. 3 A~3D is the schematic side view of the gas phase film-forming system of second embodiment of the invention.As shown in Figure 3A, it forms a film
System 10 includes a substrate transfer mechanism 11 and a reaction chamber 12.Separately there is the wafer casket 80 of a loading more wafers, it can substrate
Transport mechanism 11 draws the wafer wherein stored or places wafer to the case wherein vacated.Reaction chamber 12 is protected including multiple substrates
Component is held, in there is a video camera 122 on substrate holding structure 121.
The substrate transfer mechanism 11 includes one first forearm 111, one first pick-and-place portion 112, one second forearm 113,1 the
Two pick-and-place portions 114 and a postbrachium 115.First forearm 111 and the second forearm 113 are set on the postbrachium 115, and are respectively relative to
The postbrachium 115 have close to or far from movement.First forearm 111 and the second forearm 113 are connected to the phase of the postbrachium 115
Pair two surfaces (the upper surface and the lower surface) on, and can flex outward on the length direction of the postbrachium 115 or inwardly be overlapped.It should
First pick-and-place portion 112 and the second pick-and-place portion 114 are individually fixed in corresponding first forearm 111 and for picking and placing a substrate
On two forearms 113.
The substrate transfer mechanism 11 also includes a fixed arm 116, a support portion 117 and a base portion 118.The postbrachium 115 is set
In on the fixed arm 116, and be respectively relative to the fixed arm 116 have close to or far from movement.The support portion 117 is fixed with this
Arm 116 connects, and the fixed arm 116 is driven to rotate.The base portion 118 is connect with the support portion 117, and drives the support portion 117
It is opposite to have the movement risen or fallen.
First forearm 111 extends in the wafer casket 80 relative to the postbrachium 115, and then the first pick-and-place portion 112 is inhaled
A substrate W1 is taken, while second forearm 113 is shunk back to 115 lower section of the postbrachium, and is overlapped with the postbrachium 115.
Compared to Figure 1A, the second pick-and-place portion 114 will not be followed by one substrate W2 of absorption in this embodiment.Such as Fig. 3 B institute
Show after the first pick-and-place portion 112 draws substrate W1, do not there is any substrate being adsorbed under the second pick-and-place portion 114, then
Substrate W1 can be delivered in the reaction chamber 12.A plate base W3, and the base have been loaded on the substrate holding structure 121 at this time
Plate W3 can be the substrate for having completed depositing operation, therefore can complete one in the substrate transfer mechanism 11 and pick and place circulation or stroke
In unloaded and loaded together two kinds of movements to the reaction chamber 12.The second pick-and-place portion 114 is from the substrate holding structure 121
Substrate W3 is drawn, while the first pick-and-place portion 112 for having drawn substrate W1 can be waited in the top of the postbrachium 115.
Then, as shown in Figure 3 C, after the substrate holding structure 121, which carries substrate W1, to be removed, the support portion 117
Decline, while the second pick-and-place portion 114 for having drawn substrate W3 can be waited in the lower section of the postbrachium 115.Second forearm 113
It is extended on the carrier in reaction chamber 12 (not shown go out) relative to the postbrachium 115, so that the first pick-and-place portion 112 can be fitted
When placement substrate W1 is on the unloaded substrate holding structure 121.Substrate W1 is placed when the first pick-and-place portion 112 extremely should
In substrate holding structure 121, which absorbs the image of substrate W1 and the substrate holding structure 121, should by judgement
Relative position both in image is to adjust the position in the first pick-and-place portion 112.
Referring to Fig. 3 D, the second pick-and-place portion 114 of substrate W3 is drawn and the first pick-and-place portion 112 for just unloading can be with
The movement of substrate transfer mechanism 11 move at the wafer casket 80, which extends to the crystalline substance relative to the postbrachium 115
In circle casket 80, then substrate W3 places as the case wherein vacated in the second pick-and-place portion 114, this embodiment is most upper one layer
Case.The substrate W1 being placed on the substrate holding structure 121 can carry out depositing operation.
Comparative diagram 3A~3D, Fig. 4 A~4D is the schematic top plan view of the gas phase film-forming system of second embodiment of the invention.In
The video camera 122 in Fig. 4 A~4D on the substrate holding structure 121 is not drawn, and each figure respectively corresponds the side of Fig. 3 A~3D
Depending on schematic diagram, therefore illustrate to describe with reference to front.
Technology contents and technical characterstic of the invention have been disclosed as above, however those skilled in the art are still potentially based on this hair
Bright teaching and open and make various replacements and modification without departing substantially from spirit of that invention.Therefore, protection scope of the present invention should not
It is limited to person disclosed in embodiment, and should includes various without departing substantially from replacement and modification of the invention, and covered by claim.
Claims (15)
1. a kind of substrate transfer mechanism for semiconductor technology, characterized by comprising:
One postbrachium；
Multiple forearms, be set to the postbrachium on, and be respectively relative to the postbrachium have close to or far from movement；And
Multiple pick-and-place portions, respectively the pick-and-place portion is to be used to pick and place a substrate, and be fixed on corresponding multiple forearms.
2. the substrate transfer mechanism according to claim 1 for semiconductor technology, which is characterized in that multiple pick-and-place portion
It is electrostatic chuck.
3. the substrate transfer mechanism according to claim 1 for semiconductor technology, which is characterized in that multiple forearm point
She Yu not be on the two opposite surfaces of the postbrachium, and can flex outward on the length direction of the postbrachium or inwardly be overlapped.
4. the substrate transfer mechanism according to claim 1 for semiconductor technology, which is characterized in that also fixed comprising one
Arm, the postbrachium be set to the fixed arm on, and be respectively relative to the fixed arm have close to or far from movement.
5. the substrate transfer mechanism according to claim 4 for semiconductor technology, which is characterized in that also comprising a support
Portion, the support portion are connect with the fixed arm, and the fixed arm is driven to rotate.
6. the substrate transfer mechanism according to claim 5 for semiconductor technology, which is characterized in that also include a base
Portion, the base portion are connect with the support portion, and drive the support portion is opposite to have the movement risen or fallen.
7. a kind of film-forming system for semiconductor technology, characterized by comprising:
One reaction chamber, including multiple substrate holding structures；And
One substrate transfer mechanism, comprising:
One postbrachium；
Multiple forearms, be set to the postbrachium on, and be respectively relative to the postbrachium have close to or far from movement；And
Multiple pick-and-place portions, respectively the pick-and-place portion is for picking and placing a substrate to the respectively substrate holding structure, and is fixed on that corresponding this is more
A forearm.
8. the film-forming system according to claim 7 for semiconductor technology, which is characterized in that multiple pick-and-place portion is sequentially
Multiple substrates are drawn, and are sequentially placed on multiple substrate to corresponding multiple substrate holding structure.
9. the film-forming system according to claim 7 for semiconductor technology, which is characterized in that when in multiple pick-and-place portion
One is drawn a substrate from the substrate holding structure, another in multiple pick-and-place portion has drawn another substrate, then should
Another substrate is placed on the substrate holding structure just unloaded.
10. the film-forming system according to claim 7 for semiconductor technology, which is characterized in that it also include a video camera,
When in multiple pick-and-place portion one substrate of placement into multiple substrate holding structure one, the video camera absorb the substrate with
The image of the substrate holding structure, by judging the relative position of the two in the image to adjust the position in the pick-and-place portion.
11. the film-forming system according to claim 7 for semiconductor technology, which is characterized in that multiple pick-and-place portion is
Electrostatic chuck.
12. the film-forming system according to claim 7 for semiconductor technology, which is characterized in that multiple forearm difference
On the two opposite surfaces of the postbrachium, and it can flex outward on the length direction of the postbrachium or inwardly be overlapped.
13. the film-forming system according to claim 7 for semiconductor technology, which is characterized in that the substrate transfer mechanism
Also include a fixed arm, the postbrachium be set to the fixed arm on, and be respectively relative to the fixed arm have close to or far from movement.
14. the film-forming system according to claim 13 for semiconductor technology, which is characterized in that the substrate transfer mechanism
It also include a support portion, which connect with the fixed arm, and the fixed arm is driven to rotate.
15. the film-forming system according to claim 14 for semiconductor technology, which is characterized in that the substrate transfer mechanism
It also include a base portion, which connect with the support portion, and drives the support portion is opposite to have the movement risen or fallen.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107114636 | 2018-04-30 | ||
| TW107114636A TWI668790B (en) | 2018-04-30 | 2018-04-30 | Substrate transmission mechanism for semiconductor processes and film deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110416137A true CN110416137A (en) | 2019-11-05 |
| CN110416137B CN110416137B (en) | 2022-03-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910320003.6A Active CN110416137B (en) | 2018-04-30 | 2019-04-19 | Substrate conveying mechanism for semiconductor process and film forming system |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2019195055A (en) |
| CN (1) | CN110416137B (en) |
| TW (1) | TWI668790B (en) |
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Also Published As
| Publication number | Publication date |
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| TWI668790B (en) | 2019-08-11 |
| CN110416137B (en) | 2022-03-15 |
| TW201946197A (en) | 2019-12-01 |
| JP2019195055A (en) | 2019-11-07 |
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