CN103801532A - Treatment process for ITO (indium tin oxid) thin film - Google Patents
Treatment process for ITO (indium tin oxid) thin film Download PDFInfo
- Publication number
- CN103801532A CN103801532A CN201210461967.0A CN201210461967A CN103801532A CN 103801532 A CN103801532 A CN 103801532A CN 201210461967 A CN201210461967 A CN 201210461967A CN 103801532 A CN103801532 A CN 103801532A
- Authority
- CN
- China
- Prior art keywords
- thin film
- indium tin
- minutes
- treatment process
- tin oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a treatment process for an ITO (indium tin oxid) thin film. The treatment process is characterized in that a process method comprises the following steps of putting the ITO thin film into a beaker containing isopropanol, and soaking for 15 minutes; after soaking, putting in an ultrasonic machine and performing ultrasound treatment for 5 minutes; taking out the ITO thin film, putting in phosphoric acid solution with the concentration of 20 percent, and soaking for 15 minutes; taking out the ITO thin film and flushing with deionized water. By adopting the treatment process, the surface resistance of the ITO thin film remains unchanged basically, the surface is smoother, the light transmittance is unchanged, and the ITO thin film is more suitable for being used as a substrate of OLEDs (organic light emitting diodes); a device treated by phosphoric acid with the concentration of 20 percent is higher in luminous efficiency.
Description
Technical field
The treatment process that the present invention relates to a kind of indium tin oxide films, belongs to semiconductor applications.
Background technology
In the production process of indium tin oxide films, inevitably can produce organic pollution on the surface of indium tin oxide films, these organic pollutions are difficult to process, and therefore can affect surface voids and the surface work function of indium tin oxide films, affect the quality of indium tin oxide films.
Summary of the invention
The present invention is directed to the deficiency that prior art exists, a kind for the treatment of process of indium tin oxide films is provided.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind for the treatment of process of indium tin oxide films, it is characterized in that, and described process is as follows:
(1) indium tin oxide films being put into the beaker that fills isopropyl alcohol soaks 15 minutes;
(2), after having soaked, put into ultrasonic machine ultrasonic 5 minutes;
(3) take out indium tin oxide films, put it in the phosphoric acid solution of 20% concentration and soak 15 minutes;
(4) take out indium tin oxide films, use deionized water rinsing.
The invention has the beneficial effects as follows: the inventive method can make the sheet resistance of indium tin oxide films substantially remain unchanged, but surface is more smooth, and light transmittance is constant the more suitable substrate as OLEDs; Be 20% phosphoric acid device after treatment through over-richness, its luminous efficiency is higher.
The specific embodiment
Below principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
A treatment process for indium tin oxide films, is characterized in that, described process is as follows:
(1) indium tin oxide films being put into the beaker that fills isopropyl alcohol soaks 15 minutes;
(2), after having soaked, put into ultrasonic machine ultrasonic 5 minutes;
(3) take out indium tin oxide films, put it in the phosphoric acid solution of 20% concentration and soak 15 minutes;
(4) take out indium tin oxide films, use deionized water rinsing.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (1)
1. a treatment process for indium tin oxide films, is characterized in that, described process is as follows:
(1) indium tin oxide films being put into the beaker that fills isopropyl alcohol soaks 15 minutes;
(2), after having soaked, put into ultrasonic machine ultrasonic 5 minutes;
(3) take out indium tin oxide films, put it in the phosphoric acid solution of 20% concentration and soak 15 minutes;
(4) take out indium tin oxide films, use deionized water rinsing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210461967.0A CN103801532A (en) | 2012-11-15 | 2012-11-15 | Treatment process for ITO (indium tin oxid) thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210461967.0A CN103801532A (en) | 2012-11-15 | 2012-11-15 | Treatment process for ITO (indium tin oxid) thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103801532A true CN103801532A (en) | 2014-05-21 |
Family
ID=50699196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210461967.0A Pending CN103801532A (en) | 2012-11-15 | 2012-11-15 | Treatment process for ITO (indium tin oxid) thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103801532A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106391571A (en) * | 2016-12-09 | 2017-02-15 | 曾周 | Cleaning technology for ITO glass |
| CN106424021A (en) * | 2016-09-30 | 2017-02-22 | 四川行来科技有限公司 | Efficient film cleaning process |
-
2012
- 2012-11-15 CN CN201210461967.0A patent/CN103801532A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106424021A (en) * | 2016-09-30 | 2017-02-22 | 四川行来科技有限公司 | Efficient film cleaning process |
| CN106391571A (en) * | 2016-12-09 | 2017-02-15 | 曾周 | Cleaning technology for ITO glass |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140521 |