CN102709490A - Method for processing solution of transparent oxide electrode of organic optoelectronic device - Google Patents
Method for processing solution of transparent oxide electrode of organic optoelectronic device Download PDFInfo
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- CN102709490A CN102709490A CN2012101789152A CN201210178915A CN102709490A CN 102709490 A CN102709490 A CN 102709490A CN 2012101789152 A CN2012101789152 A CN 2012101789152A CN 201210178915 A CN201210178915 A CN 201210178915A CN 102709490 A CN102709490 A CN 102709490A
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- transparent oxide
- oxide electrode
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Abstract
The invention belongs to the field of organic optoelectronic devices, in particular to a method for processing the solution of a transparent oxide electrode of an organic optoelectronic device, which is a processing step to prepare the organic optoelectronic device and can improve the performance of the organic optoelectronic device. The method comprises the following steps: configurating deionized water solutions of such inorganic compounds as LiC1O4, NaC1O4, NaMnO4, KC1O4, RbC1O4, RbMnO4, CsC1O4, and CsMnO4; immersing the transparent oxide electrode and substrate thereof in the solutions of the compounds to be subjected to ultrasonic processing, wherein the transparent oxide electrode is subjected to cleaning processing; washing out the residual solutions on the surface of the extracted electrode by the deionized water; and allowing the electrode to be subjected to drying and ultraviolet or plasma processing. The method is low in cost and simple in operation, has no influence on the stability of the device, and can be used for large-area processing and batch processing. Moreover, the method can be realized only through the current cleaning facilities of the transparent oxide electrode in industrial production.
Description
Technical field
The invention belongs to the organic electro-optic device field, be specifically related to a kind of processing method of organic electro-optic device transparent oxide electrode, this is a processing step making organic electro-optic device, and this method can improve the performance of organic electro-optic device.
Background technology
Transparent oxide electrode has favorable conductive characteristic and light transmission rate; Often be fabricated on the glass substrate transparency electrode and substrate as organic electro-optic device, the quality of transparent oxide electrode especially the state on transparent oxide electrode surface to the performance important influence of organic electro-optic device.
As development in recent years rapidly organic luminescent device be exactly typical organic electro-optic device; It has lot of advantages; Fast and can be prepared in flexible substrate first-class such as all solid state, active illuminating, response speed, it probably becomes follow-on main demonstration and lighting technology.OLED often utilizes transparent oxide electrode such as indium tin oxide (ITO) and glass substrate as its anode and substrate.ITO has favorable conductive rate and light transmission rate, and its quality is to the performance important influence of OLED, if improve ITO work function or light transmission rate, make the surface of ITO more smooth, can improve the performance of OLED effectively.
At present, the method for processing ITO has ultraviolet to handle (UV treatment), Cement Composite Treated by Plasma (Plasma treatment), nano particle grinding and polishing, soda acid processing, be self-assembled into membrane technology etc.These methods can be improved the performance of OLED effectively; But the ITO electrode cleaning processing equipment during wherein great majority are all produced with existing OLED is incompatible; Add additional apparatus and will increase cost, therefore study a kind of can effectively improve the ITO electrode performance and with the compatible ITO processing method of existing ITO electrode cleaning processing equipment be significant.
Summary of the invention
The objective of the invention is to propose a kind of new, method is simple and with a kind of processing method of the compatible organic electro-optic device transparent oxide electrode of existing transparent oxide electrode cleaning processing equipment; Adopt the organic electro-optic device of the transparent oxide electrode making of handling through this method, performance has obvious lifting.
Inorganic compound LiClO
4, NaClO
4, NaMnO
4, KClO
4, RbClO
4, RbMnO
4, CsClO
4, CsMnO
4All have strong oxidizing property and water soluble, like CsClO
425 ℃ of following solubility is 2g/100gH
2O.The present invention utilizes LiClO
4, NaClO
4, NaMnO
4, KClO
4, RbClO
4, RbMnO
4, CsClO
4, CsMnO
4The transparent oxide electrode of solution-treated organic electro-optic device to improve device performance.This method cost is low, easy and simple to handle, to the not influence of stability of device, and can large-area treatment and batch process.
The solution-treated method of a kind of organic electro-optic device transparent oxide electrode of the present invention comprises the steps:
1) cleans the transparent oxide electrode that is produced on the substrate successively with acetone, ethanol and deionized water and (as be produced on indium tin oxide (the Indium Tin Oxides on glass, plastics or the stainless steel substrates; ITO) conducting film, fluorine are mixed tin ash (Fluorine doped Tin Oxide; FTO) conducting film or aluminium are mixed zinc oxide (Aluminium doped Zinc Oxide; AZO) conducting film), repeat 3 ~ 5 times, to remove the pollutant and the impurity on transparent oxide electrode surface; Clean the back oven dry, thus the transparent oxide electrode that obtains cleaning;
2) at room temperature with LiClO
4, NaClO
4, NaMnO
4, KClO
4, RbClO
4, RbMnO
4, CsClO
4Or CsMnO
4Crystal adds in the deionized water, ultrasonic dissolution, and solution concentration is 50 ~ 500mg/L;
3) transparent oxide electrode and the substrate thereof after will cleaning inserted step 2) solution in, sonicated 5 ~ 20min;
4) take out transparent oxide electrode; Rinse out the solution of transparent oxide electrode remained on surface with deionized water, carry out ultraviolet after the oven dry and handle 5 ~ 8min, ultraviolet power is 50 ~ 80W; Or oxygen plasma treatment 3 ~ 5min; Discharge power 30 ~ 50W, oxygen flow are 20 ~ 50mL/min, thereby accomplish the processing to transparent oxide electrode.
The transparent oxide electrode and the substrate thereof that utilize the inventive method to handle can be used as substrate and anode and are applied to organic luminescent device spare (OLED), the solar cell of different structure, different organic materials and different negative electrodes, the preparation of OTFT.Organic light-emitting device basic structure is anode/hole transmission layer/luminescent layer/electron transfer layer/negative electrode; The basic system of organic solar batteries is anode/hole resilient coating/active layer/electron buffer layer/negative electrode; The structure of OTFT is many, is broadly divided into top gate type and bottom gate type.
Description of drawings
Fig. 1: the OLED device architecture sketch map of making among the present invention;
Fig. 2: the comparison curves of the current density-voltage characteristic of the OLED device that the ito anode that adopts the ito anode of the inventive method processing and do not adopt the inventive method to handle is made;
Fig. 3: the comparison curves of the brightness-voltage characteristic of the OLED device that the ito anode that adopts the ito anode of the inventive method processing and do not adopt the inventive method to handle is made;
Fig. 4: the comparison curves of the current efficiency-voltage characteristic of the OLED device that the ito anode that adopts the ito anode of the inventive method processing and do not adopt the inventive method to handle is made;
Fig. 5: the comparison curves of the power efficiency-voltage characteristic of the OLED device that the ito anode that adopts the ito anode of the inventive method processing and do not adopt the inventive method to handle is made.
Embodiment
Embodiment 1:
A) clean ito glass successively with ethanol, acetone and deionized water, repeat 3 times,, clean the back oven dry to remove ito glass surface contaminant and impurity;
B) at room temperature use electronics sky chessboard weighing CsClO
4Crystal places quantitative deionized water, and ultrasonic dissolution configures the CsClO that concentration is 50mg/L and 100mg/L
4Solution;
C) two ito glasses step a) being handled are inserted the CsClO that concentration is 50mg/L and 100mg/L respectively
4In the solution, each sonicated 15min;
D) take out ito glass, rinse out remained on surface CsClO with deionized water
4Solution carries out ultraviolet and handles after the oven dry, power 50W handles 8min, thereby accomplishes the processing of ito glass.
With not making organic luminescent device as substrate and anode respectively through the ito glass of the method for the invention processing with through the ito glass that the method for the invention is handled, the structure of device is ito glass/NPB (60nm)/Alq
3(60nm)/CsCO
3(2.5nm)/and Al, the device of untreated ito anode is A; Utilize the CsClO of concentration for 50mg/L
4The device of the ito anode of solution-treated 15min is device B, is the CsClO of 100mg/L through concentration
4The device of the ito anode of solution-treated 15min is device C.
The OLED structure that present embodiment is made is as shown in Figure 1, and (N, N-di (1-naphthyl)-N N_diphenylbenzidine) as hole transmission layer, adopt the organic material Alq of 60nm to the organic material NPB of employing 60nm
3(tris (8-hydroxyquinoline) aluminium) adopts the CsCO of 2.5nm as luminescent layer and electron transfer layer
3As cathode buffer layer, negative electrode adopts metal A l.The hole transmission layer of device, luminescent layer, electron transfer layer and buffer electrode layer complete by the multi-source chemical gas-phase deposition system, and electrode metal Al utilizes the thermal evaporation station vapor deposition.After element manufacturing finished, the system that is made up of PR650 spectrometer and Keithley-2400 programmable voltage current source recorded the performance parameter of device.
As shown in Figure 1, this device with Al as negative electrode 15, with the thick CsCO of 2.5nm
3Resilient coating to modify Al negative electrode 15, adopts the Alq of 60nm as electron injecting layer 14
3As electron transfer layer and luminescent layer 13, the NPB that adopts 60nm is as hole transmission layer 12, and anode 11 and substrate 10 adopt by CsClO
4The ito glass that solution-treated is crossed.
As shown in Figure 2, under identical operating voltage, the current density of the device B of the ito glass that employing the inventive method was handled is higher than the device A that does not adopt the inventive method to handle ito glass, visible CsClO with debita spissitudo
4Solution-treated ITO can effectively improve the hole of device anode and inject, and improves the I-V characteristic of OLED.
As shown in Figure 3, the brightness of under identical operating voltage, adopting the inventive method to handle the device B of ITO is higher than the device A that does not adopt the inventive method to handle ITO, and the brightness of device B is 19512cd/m under 12V
2, be higher than the brightness 12546cd/m of device A significantly
2
As shown in Figure 4, the device C that under 8V, adopts the inventive method to handle ITO obtains maximum current efficient 2.66cd/A, increases than the current efficiency 2.15cd/A of device A under this voltage.
As shown in Figure 5, the device C that under 6V, adopts the inventive method to handle ITO obtains maximum power efficiency 1.22lm/W, increases than the current efficiency 1.03lm/W of device A under this voltage.
Though the above form that the present invention's employing is given an example has been carried out concrete description; But one of ordinary skill in the art should be understood; These disclosed contents under the premise without departing from the spirit and scope of the present invention, can be made many changes just as an example on the details of each several part.
Claims (5)
1. the solution-treated method of an organic electro-optic device transparent oxide electrode comprises the steps:
1) clean the transparent oxide electrode that is produced on the substrate successively with acetone, ethanol and deionized water, repeat 3 ~ 5 times,, clean the back oven dry to remove the pollutant and the impurity on transparent oxide electrode surface, thus the transparent oxide electrode that obtains cleaning;
2) at room temperature with LiClO
4, NaClO
4, NaMnO
4, KClO
4, RbClO
4, RbMnO
4, CsClO
4Or CsMnO
4Crystal adds in the deionized water, ultrasonic dissolution, and solution concentration is 50 ~ 500mg/L;
3) transparent oxide electrode and the substrate thereof after will cleaning inserted step 2) solution in, sonicated 5 ~ 20min;
4) take out transparent oxide electrode; Rinse out the solution of transparent oxide electrode remained on surface with deionized water, oven dry back ultraviolet is handled 5 ~ 8min, and ultraviolet power is 50 ~ 80W; Or oxygen plasma treatment 3 ~ 5min; Discharge power 30 ~ 50W, oxygen flow are 20 ~ 50mL/min, thereby accomplish the processing to transparent oxide electrode.
2. the solution-treated method of a kind of organic electro-optic device transparent oxide electrode as claimed in claim 1 is characterized in that: transparent oxide electrode is ITO conducting film, FTO conducting film or AZO conducting film.
3. the solution-treated method of a kind of organic electro-optic device transparent oxide electrode as claimed in claim 1 is characterized in that: the substrate of transparent oxide electrode is glass, plastics or stainless steel substrates.
4. the solution-treated method of a kind of organic electro-optic device transparent oxide electrode as claimed in claim 1 is characterized in that: organic electro-optic device is organic luminescent device spare, solar cell or OTFT.
5. the solution-treated method of a kind of organic electro-optic device transparent oxide electrode as claimed in claim 4 is characterized in that: the structure of device is ito glass/NPB/Alq
3/ CsCO
3/ Al.
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|---|---|---|---|
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|---|---|---|---|
| CN2012101789152A CN102709490A (en) | 2012-06-01 | 2012-06-01 | Method for processing solution of transparent oxide electrode of organic optoelectronic device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282846A (en) * | 2014-05-20 | 2015-01-14 | 张懿强 | Method for manufacturing ITO substrate, OLED device and manufacturing method of OLED device |
| CN110429184A (en) * | 2019-07-09 | 2019-11-08 | 淮阴工学院 | A method of improving FTO transparent conductive electrode carrier separation efficiency |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1684560A (en) * | 2005-02-26 | 2005-10-19 | 吉林大学 | Method for treating indium-tin oxide electrode of organic electroluminescent device |
| WO2010065494A2 (en) * | 2008-12-01 | 2010-06-10 | E. I. Du Pont De Nemours And Company | Anode for an organic electronic device |
-
2012
- 2012-06-01 CN CN2012101789152A patent/CN102709490A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1684560A (en) * | 2005-02-26 | 2005-10-19 | 吉林大学 | Method for treating indium-tin oxide electrode of organic electroluminescent device |
| WO2010065494A2 (en) * | 2008-12-01 | 2010-06-10 | E. I. Du Pont De Nemours And Company | Anode for an organic electronic device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282846A (en) * | 2014-05-20 | 2015-01-14 | 张懿强 | Method for manufacturing ITO substrate, OLED device and manufacturing method of OLED device |
| CN110429184A (en) * | 2019-07-09 | 2019-11-08 | 淮阴工学院 | A method of improving FTO transparent conductive electrode carrier separation efficiency |
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Application publication date: 20121003 |