CN103789823A - Reactor and method for vapor phase epitaxy of nitride semiconductor material - Google Patents
Reactor and method for vapor phase epitaxy of nitride semiconductor material Download PDFInfo
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- CN103789823A CN103789823A CN201410028993.3A CN201410028993A CN103789823A CN 103789823 A CN103789823 A CN 103789823A CN 201410028993 A CN201410028993 A CN 201410028993A CN 103789823 A CN103789823 A CN 103789823A
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Abstract
The invention discloses a reactor and a method for hydride vapor phase epitaxy (HVPE) of a nitride semiconductor material. The reactor comprises an axial symmetrical cylindrical reaction cavity, a concentric annular spray nozzle, a heater, a graphite boat, a substrate and the like, wherein the graphite boat and the substrate are heated by adopting resistance wire or infrared light irradiation; three to six gas outlet channels with rectangular cross sections are arranged in the tangential direction of the outer wall of the bottom end of the cavity; a concentric annular buffer strip is arranged among the outlet channels and the inner wall of the cavity, and a concentric annular flow collecting channel is arranged on the peripheries of the outlet channels; the outlet channels are communicated with the flow collecting channel. The reactor disclosed by the invention has the advantages that reactant gas forms micro-rotational flow in the effective growing zone of the substrate, so that the epitaxial growth thickness and the uniformity of components are obviously improved; as a graphite boat rotating device and auxiliary assemblies in a conventional reactor are omitted, the reactor is simplified, energy-saving and convenient to maintain, and the adverse impact of the rotating movement instability on the epitaxial growth is also eliminated.
Description
Technical field
The invention belongs to technical field of semiconductors, relate to a kind of hydride gas-phase epitaxy (HVPE) growing system, as the growing system of nitride semi-conductor material, a kind of particularly design and the method for reactor for III group-III nitride vapour phase epitaxy.
Background technology
III-V hi-nitride semiconductor material is doubly valued type material of recent domestic semiconductor applications, mainly take alloy materials such as GaN and InGaN, AlGaN as representative.Have now found that III group-III nitride semiconductor for the development of short-wave LED (LED), laser diode (LD) and electron device and manufacture the more and more important effect of bringing into play.
Growth GaN material has a variety of methods: such as growing GaN monocrystalline, liquid-phase growth method, molecular beam epitaxy (MBE), subliming method and hydride gas-phase epitaxy (HVPE) etc. under gas phase epitaxy of metal organic compound (MOCVD), High Temperature High Pressure.Because GaN material is subject to the restriction of physical properties own, the growth difficulty of its monocrystalline is large, so, the main heteroepitaxy growing GaN that adopts at present.Hydride gas-phase epitaxy, has higher growth rate and laterally-longitudinally extension ratio, can be used for isoepitaxial growth Free-standing GaN substrate, thereby has caused in recent years and pay attention to widely and study.
The hydride gas-phase epitaxy (HVPE) of present stage is still confined to use small size reactor, such as the GaN wafer of 3～6 2 inches of secondary growths.Traditional HVPE growing system adopts horizontal reactor design conventionally, substrate support plate is conventionally horizontal by certain angle, nozzle structure adopts round nozzle more, this reactor design, in the time that Substrate Area increases or effectively growth district expands, reactant, in the distributing homogeneity variation of substrate surface, causes the lack of homogeneity of GaN wafer growth thickness, thereby is not suitable for the Material growth of multi-disc substrate or large size one-piece substrate.Hang vertical or hang in inverted HVPE growing system, because reactor can be designed to axisymmetric cylinder shape, wherein shower nozzle can be designed to pipe or donut tubular construction, to spray flow field and the horizontal system of concentration ratio of gas easily even, thereby Material growth quality can obtain improvement to a certain extent.
GaN wafer is prepared the homogeneity that most important index is its growth thickness and component thereof.Wishing to get its key of high quality wafer is the appropriate design of reactor and how builds best precursor concentration field and Wen Chang.Conventionally, uniform temperature field is to realize by boosting or Infrared irradiation graphite boat, and the uniform concentration field of precursor (comprise radially with circumferential) is to obtain by the ingehious design of shower nozzle.But present stage does not also have a kind of desirable air intake structure can obtain radially precursor distribution uniformly, and the graphite boat that circumferentially precursor distribution uniformly is mainly placed in its groove by rotation is realized.In the reactor of existing HVPE system, the rotating mechanism more complicated of graphite boat, such as, between power source motor and graphite boat, need to realize transmission of power by a turning axle and make graphite boat rotation; Need accurately to control the rotating speed of turning axle, to guarantee the stability of substrate rotation; And the connection mechanism of flange at the bottom of turning axle and chamber of the reactor should guarantee the accessible rotation of turning axle, guarantee again the vacuum condition that reactor cavity is indoor.According to existing reactor assembly, be difficult to accomplish not only guarantee the system stability under situation described above but also can build best precursor concentration field.
For the foregoing reasons, for further simplified construction, maintain easily, energy efficient, raising Material growth quality, the essential technical project of improving reactor.
Summary of the invention
Main purpose of the present invention is: a kind of nitride semi-conductor material vapour phase epitaxy (HVPE) reactor design and method are provided.For this reason, need improve innovation with reactor to existing vapour phase epitaxy (HVPE).
The present invention proposes a kind of nitride semi-conductor material vapour phase epitaxy reactor design and method, its main technical schemes is: vertical or hang in inverted HVPE system in existing suspension, save the motor, transmission shaft and the attachment component that make graphite boat and substrate rotation use, simplified equipment; Exit passageway to reactant gases in reaction chamber is transformed, described exit passageway is drawn from chamber outer wall tangential direction, exit passageway cross section is rectangle, exit passageway quantity and size are determined according to reaction gas flow, and each channel gas Way out is clockwise direction or the counter clockwise direction of cavity cross section (or graphite boat disk).Make like this reactant gas form the centrifugal eddy flow that declines at substrate surface or effective growth district, be conducive to improve the epitaxy thickness of nitride material and the homogeneity of component thereof.
Specifically, nitride material vapour phase epitaxy reactor of the present invention, comprises shower nozzle, cavity, graphite disk, heating unit etc.Reactor shower nozzle and cavity configuration all adopt high-purity quartz material; Reactor design becomes rotational symmetry cylinder shape, and shower nozzle is donut tubular construction, and inner circle length of tube is slightly shorter than cylindrical endless tube; Reactor cavity is peripheral adopts Resistant heating, and in reactor axial design several different warm areas, to graphite boat and on put substrate and adopt separately Resistant heating or infrared light boosting; Reaction gas mixtures in reactor cavity is discharged by the pneumatic outlet passage of cavity bottom, this exit passageway Cross section Design is rectangle, exit passageway quantity and size are determined according to gas flow, and each exit passageway discharge directions is all along clockwise direction or the counter clockwise direction of cavity cross section (or graphite boat disk), make reactant on graphite boat and substrate surface, form the centrifugal eddy flow that declines.In order further to expand the useful area of growth material, one donut buffer strip is set between mixed gas outlet and reactor cavity inwall, with expansion epitaxy useful area time, the acutely mobile disadvantageous effect to epitaxy quality of fluid that weakens each exit, this buffer strip height is consistent with each exit passageway height.In this reactor outlet periphery, concentric ring-like collection flow channels is also set, its cross section is rectangle or circle, described collection flow channels only designs an outlet, and each reaction chamber relief outlet gas collection one place is focused on.
A kind of nitride semi-conductor material vapour phase epitaxy reactor design and method that the present invention proposes, graphite boat rotation, power set and attachment component in existing HVPE system response device are saved, not only greatly simplification device, energy efficient, maintain easily, and, eliminate the unstable disadvantageous effect to Grown material of graphite boat rotation; The design of reactor of the present invention makes reactant gas on large-sized substrate surface or the effective growth district of big area forms a kind of centrifugal eddy flow that declines, thereby, improve significantly growth thickness and the component uniformity thereof of nitride material.
Below in conjunction with drawings and Examples, the present invention will be further described.
Accompanying drawing explanation
Fig. 1 is a kind of nitride semi-conductor material vapour phase epitaxy of the present invention reactor cross section figure.
Fig. 2 is nitride semi-conductor material vapour phase epitaxy reactor vertical view in embodiment of the present invention 1.
Fig. 3 is the structural representation of nitride semi-conductor material vapour phase epitaxy reactor in embodiment of the present invention 2, wherein:
3A is reactor cross section figure;
3B is reactor vertical view.
Fig. 4 is nitride semi-conductor material vapour phase epitaxy reactor vertical view in embodiment of the present invention 3.
Embodiment
Embodiment 1: as shown in Figure 1, in the vertical HVPE system of suspension, precursor gas and separation gas are injected by the top donut shower nozzle 1 of reactor, and precursor passage inner circle length of tube is slightly shorter than peripheral pipe length; Shower nozzle 1 surrounding periphery is rotational symmetry cylindrical reactor cavity 2; This chamber outer wall is with resistance heater 3 parcels and be covered to vertically whole cavity; Placing graphite boat disk 4 under shower nozzle 1, graphite boat disk 4 upper surfaces are provided with multiple grooves, load substrate wafer in groove.Heat separately or heat by Infrared irradiation by resistance wire 5, making graphite boat disk 4 and underlayer temperature maintain 1070 ℃.As shown in Figure 2, in reactor, reacted mixed gas is discharged by the exit passageway 6 that is arranged on outer, cavity bottom, this exit passageway 6 is drawn by cavity 2 outer wall tangential directions, exit passageway cross section is rectangle, its quantity is made as four, each exit passageway discharge directions is consistent, all along the counterclockwise or clockwise tangential direction of cavity cross section, make reactant above the effective growth district of substrate surface, form the centrifugal eddy flow that declines, be beneficial to the nitride of reaction generation at substrate surface uniform deposition, finally obtain high quality nitride semiconductor wafer.
Embodiment 2: as shown in Fig. 3 A, 3B, on embodiment 1 basis, reactor is further improved, for further expansion can growth material effective area, between mixed gas outlet passage 6 and cavity 2 inwalls, a donut buffer strip 7 is set, these buffer strip 7 height are highly consistent with each pneumatic outlet passage 6, this design expands substrate can growth material effective area time, weakens each exit fluid and acutely flows to the evenly disadvantageous effect of growth of nitride material on substrate.
Embodiment 3: as shown in Figure 4,1,2 advantage in conjunction with the embodiments, reactor has been carried out further improving, pneumatic outlet passage 6 peripheries after reactor reaction arrange one with axisymmetric cavity donut collection flow channels 8, described collection flow channels 8 cross sections are rectangle or circle, each reaction gas outlet passage 6 all connects with collection flow channels 8, and collection flow channels 8 only designs one and exports 9, focuses on to each exit passageway institute Exhaust Gas is collected to a place.
The nitride semi-conductor material vapour phase epitaxy reactor that the present invention proposes, by adopting tangential structure design of discharging to reacting rear pneumatic outlet passage, replace the graphite boat swivel arrangement in existing HVPE growing system, attachment component and drive-motor, not only simplification device greatly, energy efficient, maintain easily, also eliminate the disadvantageous effect of graphite boat rotational instability in pre-existing reactors (its main manifestations be shake in moving process and substrate can maintenance level aspect these two) to Material growth thickness and component uniformity, and the more important thing is, the design mechanism makes reactant form a kind of centrifugal eddy flow that declines at graphite boat and the effective growth district of substrate surface, make nitride uniform deposition on substrate of reaction generation, obtain high quality nitride semiconductor wafer, and, expand effective growth district area and be beneficial to volume production.
The above is only all several specific embodiment of the present invention, so can not be in order to limit the scope of the claims of the present invention.It should be pointed out that the technology for this area, all disengaging under the prerequisite of design of the present invention, any modification of making, be equal to replacement, improvement etc., all should be included in protection scope of the present invention.
Claims (6)
1. reactor design for a nitride semi-conductor material vapour phase epitaxy (HVPE), it is characterized by: reactor shower nozzle adopts donut structure, and described shower nozzle inner circle length of tube is slightly less than outer toroid length of tube, it under shower nozzle, is graphite boat disk, this shower nozzle periphery is the reactor of rotational symmetry cylinder shape cavity configuration, and described cavity periphery is with resistance heater parcel and be covered to vertically whole cavity; In described reactor, graphite boat is fixed on cavity bottom central authorities, and graphite boat disk is used separately resistance wire heater heats; Described reactor cavity is arranged with reactant gases discharge-channel outside bottom, and channel outlet is along cylinder shape chamber outer wall tangential direction, and number of channels and size are determined according to reactant gases total amount; The tangential in design of described channel outlet makes reactant above graphite boat and the effective growth district of substrate, form a kind of centrifugal eddy flow that declines.
2. reactor according to claim 1, is characterized in that: wherein the graphite boat heats mode can also adopt infrared light boosting.
3. reactor according to claim 1, it is characterized in that: described reactant gases discharge-channel, its cross section is rectangle, its quantity can be 2～5 not etc., the discharge directions of its each discharge-channel is all along the clockwise direction of cavity cross section (or graphite boat disk) or counterclockwise.
4. reactor described in wanting 1 according to right, is characterized by: a donut buffer strip is being set between section exit passageway and cavity inner wall at the bottom of reactor, and described buffer strip height is consistent with each pneumatic outlet channel height.
5. reactor according to claim 1, be further characterized in that: a concentric ring type collection flow channels is set in the exit passageway periphery of reactor, described Exit to all routes and collection flow channels all connect, collection flow channels cross section is rectangle or circle, collection flow channels only designs an outlet, after institute's Exhaust Gas collects a place, focuses on.
6. reactor according to claim 1, is further characterized in that: this reactor is not only applied to and hangs vertical HVPE system, also can be applicable to be inverted the HVPE system that supports.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113026107A (en) * | 2021-02-26 | 2021-06-25 | 无锡吴越半导体有限公司 | Apparatus for manufacturing GaN single crystal |
| CN117089924A (en) * | 2023-10-17 | 2023-11-21 | 凯德芯贝(沈阳)石英有限公司 | Quartz nozzle for semiconductor vapor phase epitaxy and preparation and use methods thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3306768A (en) * | 1964-01-08 | 1967-02-28 | Motorola Inc | Method of forming thin oxide films |
| US5391232A (en) * | 1985-12-26 | 1995-02-21 | Canon Kabushiki Kaisha | Device for forming a deposited film |
| CN102465333A (en) * | 2010-11-18 | 2012-05-23 | 南京大学 | Vertical hydride vapor phase epitaxy growth system |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3306768A (en) * | 1964-01-08 | 1967-02-28 | Motorola Inc | Method of forming thin oxide films |
| US5391232A (en) * | 1985-12-26 | 1995-02-21 | Canon Kabushiki Kaisha | Device for forming a deposited film |
| CN102465333A (en) * | 2010-11-18 | 2012-05-23 | 南京大学 | Vertical hydride vapor phase epitaxy growth system |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113026107A (en) * | 2021-02-26 | 2021-06-25 | 无锡吴越半导体有限公司 | Apparatus for manufacturing GaN single crystal |
| CN113026107B (en) * | 2021-02-26 | 2021-11-30 | 无锡吴越半导体有限公司 | Apparatus for manufacturing GaN single crystal |
| CN117089924A (en) * | 2023-10-17 | 2023-11-21 | 凯德芯贝(沈阳)石英有限公司 | Quartz nozzle for semiconductor vapor phase epitaxy and preparation and use methods thereof |
| CN117089924B (en) * | 2023-10-17 | 2023-12-19 | 凯德芯贝(沈阳)石英有限公司 | Quartz nozzle for semiconductor vapor phase epitaxy and preparation and use methods thereof |
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