CN103780211A - High-voltage solid-state amplifier - Google Patents
High-voltage solid-state amplifier Download PDFInfo
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- CN103780211A CN103780211A CN201310750264.4A CN201310750264A CN103780211A CN 103780211 A CN103780211 A CN 103780211A CN 201310750264 A CN201310750264 A CN 201310750264A CN 103780211 A CN103780211 A CN 103780211A
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Abstract
The invention discloses a high-voltage solid-state amplifier. The high-voltage solid-state amplifier comprises an MOS transistor with the model number of IXZ2210 from the IXYS Company, wherein the working frequency of the MOS transistor is 67.8MHz, pulse output power is larger than or equal to 960W under the condition of 150V direct current supply, and supply voltages of a source electrode is 150Vdc. A high-voltage solid-state amplification technology is provided, for the model selection of the transistor of the power amplifier, the MOS transistor with the model number of IXZ2210 from the IXYS Company is selected and used, and design and research of solid-state power amplification are developed according to the MOS transistor. The problem of high design cost of solid-state amplifiers in related technologies is solved, high-frequency high-power output is achieved, and the design cost of solid-state amplification is greatly reduced. In addition, the indexes such as harmonic suppression capability and standing wave resisting capability are improved greatly.
Description
Technical field
The present invention relates to the communications field, particularly relate to a kind of high voltage solid-state amplifier.
Background technology
At present, the core of solid-state amplifier is microwave power transistor, and the required transistor of high-frequency high-power amplifier under design impulsive condition, at the product that is mainly Freescale and NXP two companies comparatively generally using in the market, but, the power amplifier tube price of Freescale and NXP Liang Ge company is higher, and the cost ratio accounting in solid-state amplifier is high.
For the higher problem of the design cost of solid-state amplifier in correlation technique, effective solution is not yet proposed at present.
Summary of the invention
For the higher problem of the design cost of solid-state amplifier in correlation technique, the invention provides a kind of high voltage solid-state amplifier, in order to solve the problems of the technologies described above.
According to an aspect of the present invention, the invention provides a kind of high voltage solid-state amplifier, wherein, this high voltage solid-state amplifier comprises: the MOS transistor of the IXZ2210 model of IXYS company; Wherein, described MOS transistor is under the condition of 67.8MHz, 150V direct current supply in operating frequency, pulse output power >=960W; Drain electrode supply power voltage is 150Vdc.
Further, the Input matching of described MOS transistor is traditional transformer form, and coiling input and output turn ratio N is 2:1, and output matching is line transformer form, 25 ohm of the characteristic impedances of transmission line.
The invention provides the solid-state amplifying technique of a kind of high voltage, in the transistor type selecting of selecting power amplifier, selected the metal-oxide-semiconductor of the IXZ2210 model of IXYS company, and launch according to this metal-oxide-semiconductor the design and researchp that solid state power amplifies.Solved the higher problem of the design cost of solid-state amplifier in correlation technique, not only realized the output of high-frequency high-power, and greatly reduced the design cost of solid-state amplification, in addition, the indexs such as harmonic wave inhibition, anti-standing wave ability are all greatly improved.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, and for above and other objects of the present invention, feature and advantage can be become apparent, below especially exemplified by the specific embodiment of the present invention.
Accompanying drawing explanation
Fig. 1 is according to the structured flowchart of the high voltage solid-state amplifier of the embodiment of the present invention;
Fig. 2 is power amplifier (pulse mode) schematic diagram based on the design of IXZ2210 model metal-oxide-semiconductor according to the embodiment of the present invention;
Fig. 3 is according to the plate-making figure of the power amplifier (pulse mode) based on the design of IXZ2210 model metal-oxide-semiconductor of the embodiment of the present invention.
Embodiment
In order to solve the higher problem of the design cost of solid-state amplifier in correlation technique, the invention provides a kind of high voltage solid-state amplifier, below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, does not limit the present invention.
In order further effectively to reduce the design cost of solid-state amplifier, the invention provides the solid-state amplifying technique of a kind of high voltage, use this technology not only to realize the output of high-frequency high-power, and greatly reduce the design cost of solid-state amplification, the indexs such as harmonic wave inhibition in addition,, anti-standing wave ability are all greatly improved.
The technical solution adopted for the present invention to solve the technical problems is: in the transistor type selecting of selecting power amplifier, avoid applying in the market the transistor of more Freescale and NXP company, as MRF6VP61K25H, BLF188XR etc., but selected the metal-oxide-semiconductor of the IXZ2210 model of IXYS company, and launch according to this metal-oxide-semiconductor the design and researchp that solid state power amplifies.
The present embodiment provides a kind of high voltage solid-state amplifier, and Fig. 1 is according to the structured flowchart of the high voltage solid-state amplifier of the embodiment of the present invention, and as shown in Figure 1, this high voltage solid-state amplifier comprises: the MOS transistor of the IXZ2210 model of IXYS company; Wherein, MOS transistor is under the condition of 67.8MHz, 150V direct current supply in operating frequency, pulse output power >=960W; Drain electrode supply power voltage is 150Vdc.The front end access input impedance matching network of this MOS transistor, the rear end access output impedance matching networks of this MOS transistor.
The Input matching of this MOS transistor is traditional transformer form, and coiling input and output turn ratio N is 2:1, and output matching is line transformer form, 25 ohm of the characteristic impedances of transmission line.
The transistorized basic characteristics of IXZ2210 of IXYS company are: VDSS=500V, ID25=10A, PDC=940W; Pout=550W (CW), Gain=14dB@175MHz/150V etc.
For high-frequency impulse working method, select this power tube to have following advantage: supply power voltage 150V, even higher, its pulse power output gains as more than 16dB more than can reaching 1kW; Reach ± 30V of gate withstand voltage, makes power tube work more reliable; Because of the withstand voltage 500V that reaches of drain electrode of power tube, possesses anti-total reflection function etc.The power tube of IXZ2210 model under high-frequency impulse condition of work with market on main flow power amplifier manage mutually ratio, can be completely alternative in function.And in the market price, be about 1kW at transistor power grade, same pulse power output, the MOS power tube of the IXZ2210 model of IXYS company is on market conventionally 1/4th of the power tube of use.
The power amplifier that relies on IXZ2210 model metal-oxide-semiconductor and design, its principle power amplifier (pulse mode) schematic diagram based on the design of IXZ2210 model metal-oxide-semiconductor as shown in Figure 2, the operating frequency of the power amplifier based on the design of IXZ2210 model metal-oxide-semiconductor is 67.8MHz, in the time that supply power voltage is 150Vdc, typical case's bias voltage is that 5.5V(quiescent current is 0.1A), its 1dB compression point power output is 960W, harmonic wave is better than 30dBc, gain >=16dB is able to take total reflection under pulsed operation condition.Each components and parts list of Fig. 2 intermediate power amplifier (pulse mode) is as shown in table 1.
Table 1
Fig. 3 is according to the plate-making figure of the power amplifier (pulse mode) based on IXZ2210 model metal-oxide-semiconductor design of the embodiment of the present invention, and as shown in Figure 3, the most central white box in figure, is the position of power amplifier.
The present invention proposes a kind of high voltage solid-state amplifier technology, can be to realize at low cost the high-power output of high-frequency impulse.It is the metal-oxide-semiconductor of selecting IXZ2210 model, and its drain electrode supply power voltage is 150Vdc.Be under 67.8MHz condition in operating frequency, pulse output power >=1kW, and can anti-total reflection.The Input matching of MOS transistor is traditional transformer form, and coiling input and output turn ratio N is 2:1, and output matching is line transformer form, and 25 ohm of the characteristic impedances of transmission line.
The invention has the beneficial effects as follows, in the time designing the high power solid state amplifier of working under impulsive condition, with with on market generally compared with the high power transistor design of application, design solid-state amplifier with the metal-oxide-semiconductor of the IXZ2210 model of IXYS company, can be completely alternative.And the price advantage of employing IXZ2210 model metal-oxide-semiconductor reduces the cost that designs solid-state amplifier greatly.
Although be example object, the preferred embodiments of the present invention are disclosed, it is also possible those skilled in the art will recognize various improvement, increase and replacement, therefore, scope of the present invention should be not limited to above-described embodiment.
Claims (2)
1. a high voltage solid-state amplifier, is characterized in that, described high voltage solid-state amplifier comprises: the MOS transistor of the IXZ2210 model of IXYS company; Wherein, described MOS transistor is under the condition of 67.8MHz, 150V direct current supply in operating frequency, pulse output power >=960W; Drain electrode supply power voltage is 150Vdc.
2. high voltage solid-state amplifier as claimed in claim 1, it is characterized in that, the Input matching of described MOS transistor is traditional transformer form, and coiling input and output turn ratio N is 2:1, output matching is line transformer form, 25 ohm of the characteristic impedances of transmission line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310750264.4A CN103780211A (en) | 2013-12-31 | 2013-12-31 | High-voltage solid-state amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310750264.4A CN103780211A (en) | 2013-12-31 | 2013-12-31 | High-voltage solid-state amplifier |
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| Publication Number | Publication Date |
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| CN103780211A true CN103780211A (en) | 2014-05-07 |
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| CN201310750264.4A Pending CN103780211A (en) | 2013-12-31 | 2013-12-31 | High-voltage solid-state amplifier |
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Citations (7)
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|---|---|---|---|---|
| US6335538B1 (en) * | 1999-07-23 | 2002-01-01 | Impulse Dynamics N.V. | Electro-optically driven solid state relay system |
| CN101141115A (en) * | 2007-08-23 | 2008-03-12 | 熊猫电子集团有限公司 | High-power MOSFET tube security protection method and circuit in radio frequency emitting circuit |
| US20100189278A1 (en) * | 2007-09-13 | 2010-07-29 | Toa Corporation | Public-address system |
| CN202004729U (en) * | 2010-12-31 | 2011-10-05 | 浙江创佳数字技术有限公司 | Solid-state high-power amplification module |
| CN102255606A (en) * | 2011-07-25 | 2011-11-23 | 中国科学院微电子研究所 | Solid-state RF (radio frequency) power supply based on E-power amplifying circuit |
| CN102355205A (en) * | 2011-06-24 | 2012-02-15 | 夏义峰 | Solid-state radio frequency generator |
| CN202395728U (en) * | 2011-10-31 | 2012-08-22 | 武汉中元通信股份有限公司 | Broadband high power amplifier |
-
2013
- 2013-12-31 CN CN201310750264.4A patent/CN103780211A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6335538B1 (en) * | 1999-07-23 | 2002-01-01 | Impulse Dynamics N.V. | Electro-optically driven solid state relay system |
| CN101141115A (en) * | 2007-08-23 | 2008-03-12 | 熊猫电子集团有限公司 | High-power MOSFET tube security protection method and circuit in radio frequency emitting circuit |
| US20100189278A1 (en) * | 2007-09-13 | 2010-07-29 | Toa Corporation | Public-address system |
| CN202004729U (en) * | 2010-12-31 | 2011-10-05 | 浙江创佳数字技术有限公司 | Solid-state high-power amplification module |
| CN102355205A (en) * | 2011-06-24 | 2012-02-15 | 夏义峰 | Solid-state radio frequency generator |
| CN102255606A (en) * | 2011-07-25 | 2011-11-23 | 中国科学院微电子研究所 | Solid-state RF (radio frequency) power supply based on E-power amplifying circuit |
| CN202395728U (en) * | 2011-10-31 | 2012-08-22 | 武汉中元通信股份有限公司 | Broadband high power amplifier |
Non-Patent Citations (3)
| Title |
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| 徐玉存等: "一种宽带D类射频功率放大模块设计", 《雷达与对抗》 * |
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| 陈俐: "L波段固态发射机中1.5kW功放组件的研制", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
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Application publication date: 20140507 |